Substrate processing method

Abstract

The invention provides a technology capable of effectively reducing the disintegration rate of a pattern of a substrate. The substrate processing method includes a holding step, a liquid supply step, a first drying liquid supply step, a second drying liquid supply step, and a drying step. In the first drying liquid supply step, a first drying liquid having a first boiling point (bp1) and a lower surface tension than the processing liquid is supplied to the first main surface of the substrate. In the second drying liquid supply step, a second drying liquid having a second boiling point (bp2) and a lower surface tension than the first drying liquid is supplied to the first main surface of the substrate. In the drying step, the substrate is dried. And a heating step for heating the second main surface of the substrate to a first temperature during at least a part of the time in the first drying liquid supply step, and heating at least a part of the second main surface of the substrate to a second temperature during at least a part of the time in the second drying liquid supply step. The positive or negative of the value obtained by subtracting the second temperature from the first temperature is the same as the positive or negative of the value obtained by subtracting the second boiling point (bp2) from the first boiling point (bp1).

Description

Technical Field

[0001] This disclosure relates to a substrate processing method. Background Technology

[0002] For some time, the industry has disclosed monolithic substrate processing apparatuses for processing substrates (e.g., Patent Document 1). In Patent Document 1, after supplying a rinsing solution to the substrate, the substrate processing apparatus supplies isopropanol, which has a lower surface tension than the rinsing solution, to the substrate, and then dries the substrate. This suppresses the destruction of the substrate pattern during drying.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-23182 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] However, in the technology described in Patent Document 1, isopropanol is evaporated to dry the substrate. In recent years, with the miniaturization of patterns, the patterns on the substrate are prone to breakage, and it is difficult to sufficiently reduce the pattern breakage rate by simply evaporating isopropanol.

[0008] Therefore, the purpose of this disclosure is to provide a technique that can effectively reduce the pattern breakage rate of a substrate.

[0009] [Technical means to solve the problem]

[0010] The substrate processing method of the first embodiment includes: a holding step, holding a substrate having a patterned first main surface and a second main surface opposite to the first main surface; a liquid supply step, supplying a processing liquid to the first main surface of the substrate; a first drying liquid supply step, after the liquid supply step, supplying a first drying liquid having a first boiling point and a surface tension lower than that of the processing liquid to the first main surface of the substrate; and a second drying liquid supply step, after the first drying liquid supply step, supplying a second drying liquid having a second boiling point different from the first boiling point and a surface tension lower than that of the first drying liquid. A second drying liquid is supplied to the first main surface of the substrate; and a drying process is performed after the second drying liquid supply process to dry the substrate; and during at least a portion of the time in the first drying liquid supply process, the second main surface of the substrate is heated to a first temperature; during at least a portion of the time in the second drying liquid supply process, at least a portion of the second main surface of the substrate is heated to a second temperature different from the first temperature; the sign of the value obtained by subtracting the second temperature from the first temperature is the same as the sign of the value obtained by subtracting the second boiling point from the first boiling point.

[0011] The second method is a substrate processing method as described in the first method, wherein, in the first drying liquid supply step, a hot medium at a first medium temperature is supplied to the second main surface of the substrate; and in the second drying liquid supply step, the hot medium at a second medium temperature is supplied to the second main surface of the substrate; the sign of the value obtained by subtracting the second medium temperature from the first medium temperature is the same as the sign of the value obtained by subtracting the second boiling point from the first boiling point.

[0012] The third method is a substrate processing method as in the first or second method, wherein the higher of the first temperature and the second temperature is above the lower of the first boiling point and the second boiling point.

[0013] The fourth method is a substrate processing method as described in any of the first to third methods, wherein the mixability of the processing liquid and the first drying liquid is higher than the mixability of the processing liquid and the second drying liquid.

[0014] The fifth method is a substrate processing method as described in any of the first to fourth methods, wherein, in the first drying liquid supply step, at least a portion of the second main surface of the substrate is heated to above the first boiling point of the first drying liquid, and the first drying liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate is less than the first boiling point of the first drying liquid.

[0015] The sixth method is a substrate processing method as described in any of the first to fifth methods, wherein, in the second drying liquid supply step, at least a portion of the second main surface of the substrate is heated to above the second boiling point of the second drying liquid, and the second drying liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate is less than the second boiling point of the second drying liquid.

[0016] The seventh method is a substrate processing method as described in any of the first to sixth methods, wherein the second temperature is higher than the first temperature; and in the second drying liquid supply process, during the first time of the second drying liquid supply time, the temperature of the second main surface of the substrate is lower than the second temperature, and during the second time of the second drying liquid supply time, the second main surface of the substrate is heated to the second temperature.

[0017] [The effects of the invention]

[0018] According to the first method, when the second boiling point is higher than the first boiling point, the second temperature is higher than the first temperature. Therefore, in the second drying liquid supply process, the temperature of the second drying liquid on the first main surface of the substrate can be further increased. Consequently, a higher displacement efficiency can be achieved in the displacement from the first drying liquid to the second drying liquid on the first main surface of the substrate. Therefore, at the end of the second drying liquid supply process, the residual amount of the first drying liquid, which has a higher surface tension, can be reduced. Therefore, the pattern breakage rate during drying can be reduced. Furthermore, at the end of the second drying liquid supply process, due to the higher temperature of the second drying liquid, the second drying liquid can evaporate at a lower surface tension and a higher evaporation rate. This also reduces the pattern breakage rate.

[0019] When the first boiling point is higher than the second boiling point, the first temperature is higher than the second temperature. Therefore, in the first drying liquid supply process, the temperature of the first drying liquid on the first main surface of the substrate can be further increased. Consequently, the displacement efficiency of the self-processing liquid to the first drying liquid on the first main surface of the substrate can be improved. Therefore, at the end of the first drying liquid supply process, the residual amount of the processing liquid with higher surface tension can be reduced. Therefore, the pattern breakage rate during drying can be reduced.

[0020] According to the second method, it can be simply configured to heat the second main surface of the substrate to a first temperature corresponding to the first boiling point of the first drying liquid and a second temperature corresponding to the second boiling point of the second drying liquid.

[0021] According to the third method, when the second boiling point is higher than the first boiling point, the second main surface of the substrate is heated to a second temperature higher than the first boiling point of the first drying liquid for at least a portion of the time during the second drying liquid supply process. Therefore, the temperature of the second drying liquid on the first main surface of the substrate can be further increased. Thus, the displacement from the first drying liquid to the second drying liquid can be performed with higher displacement efficiency.

[0022] According to method 4, higher replacement efficiency can be achieved for the replacement of the self-treated liquid with the first drying liquid and the replacement of the first drying liquid with the second drying liquid.

[0023] According to the fifth method, in the first drying liquid supply process, the second main surface of the substrate is heated to above the first boiling point of the first drying liquid, and the first drying liquid is supplied at a flow rate where the temperature of the first main surface of the substrate is below the first boiling point. Therefore, although the temperature of the first main surface of the substrate is closer to the first boiling point of the first drying liquid, the boiling of the first drying liquid can be suppressed more reliably, and the adhesion of particles can be suppressed.

[0024] According to the sixth method, in the second drying liquid supply step, the second main surface of the substrate is heated to above the second boiling point of the second drying liquid, and the second drying liquid is supplied at a flow rate where the temperature of the first main surface of the substrate is below the second boiling point. Therefore, although the temperature of the first main surface of the substrate is closer to the second boiling point of the second drying liquid, the boiling of the second drying liquid can be more reliably suppressed, and the adhesion of particles can be suppressed. Furthermore, since the temperature of the first main surface is close to the second boiling point, in subsequent drying steps, the drying liquid can be evaporated in a shorter time under lower surface tension. Therefore, the pattern breakage rate can be effectively reduced.

[0025] According to method 7, power consumption can be reduced. Attached Figure Description

[0026] Figure 1 This is a top view that schematically illustrates an example of the configuration of a substrate processing apparatus.

[0027] Figure 2 This is a block diagram that roughly represents an example of the internal structure of the control unit.

[0028] Figure 3 This is a longitudinal sectional view that schematically shows an example of the configuration of the processing unit in the first embodiment.

[0029] Figure 4 This is a flowchart illustrating an example of the actions of a processing unit.

[0030] Figure 5 This is a diagram that schematically illustrates an example of the state of a processing unit in the first drying liquid supply process.

[0031] Figure 6 This is a diagram that schematically illustrates an example of the state of a processing unit in the second drying liquid supply process.

[0032] Figure 7 This is a schematic diagram illustrating the timing of the processing unit in the first embodiment, the time-varying temperature of the thermal medium, and the time-varying temperature of the second main surface of the substrate, representing a first example.

[0033] Figure 8 This is a second example of a timing diagram schematically showing the processing unit of the first embodiment, the time change of the temperature of the thermal medium, and the time change of the temperature of the second main surface of the substrate.

[0034] Figure 9 This is a schematic diagram illustrating the timing of the processing unit in the second embodiment, the temperature of the heat medium, the temperature of the second main surface of the substrate, and the first example of the time-varying temperature of the first main surface of the substrate.

[0035] Figure 10This is a schematic diagram illustrating the timing of the processing unit in the second embodiment, the temperature of the heat medium, the temperature of the second main surface of the substrate, and the time variation of the temperature of the first main surface of the substrate, as a second example.

[0036] Figure 11 This is a schematic diagram illustrating the timing of the processing unit in the third embodiment, the temperature of the thermal medium, and an example of the time-varying temperature of the second main surface of the substrate.

[0037] Figure 12 This is a flowchart illustrating the operation of the processing unit in the fourth embodiment, as shown in the first example.

[0038] Figure 13 This is a flowchart illustrating the second example of the operation of the processing unit in the fourth embodiment.

[0039] Figure 14 This is a diagram that schematically illustrates an example of the configuration of the processing unit in the fifth embodiment. Detailed Implementation

[0040] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, for ease of understanding, the dimensions or numbers of various parts are exaggerated or simplified as needed. Also, parts having the same structure and function are given the same reference numerals, and repeated descriptions are omitted in the following explanation.

[0041] Furthermore, in the following descriptions, the same symbols are used to illustrate the same components, and their names and functions are also the same. Therefore, detailed descriptions of them are sometimes omitted to avoid repetition.

[0042] Furthermore, in the following description, even though ordinal numbers such as "first" or "second" are sometimes used, these terms are used for convenience in understanding the content of the implementation method and are not limited to the order that may be generated by these ordinal numbers.

[0043] When using expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions not only strictly indicate the positional relationship but also indicate a state of relative displacement with respect to angles or distances within the tolerance range or to achieve the same level of functionality. When using expressions indicating equality (e.g., "same," "equal," "homogeneous," etc.), unless otherwise specified, such expressions not only indicate a state of quantitatively strict equality but also indicate a state of difference in tolerance or to achieve the same level of functionality. When using expressions indicating shape (e.g., "quadrilateral shape" or "cylindrical shape," unless otherwise specified, such expressions not only strictly indicate the shape geometrically but also indicate a shape with features such as concavity, convexity, or chamfers within the range to achieve the same level of effect. When using expressions such as "includes," "equipped with," "possesses," "contains," or "has" a constituent element, such expressions are not exclusive expressions that exclude the presence of other constituent elements. When the expression “at least one of A, B and C” is used, the expression includes: only A, only B, only C, any two of A, B and C, and all of A, B and C.

[0044] <First Embodiment>

[0045] <Overall Structure of the Substrate Processing Device>

[0046] Figure 1 This is a top view that schematically illustrates an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a monolithic processing apparatus that processes substrates W one by one.

[0047] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display (LCD), a substrate for an organic EL (Electroluminescence) display, a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disc, a substrate for an optical disk, a substrate for a photomask, or a substrate for a solar cell. The substrate W is a thin, flat plate shape having a first main surface Wa and a second main surface Wb. The second main surface Wb is the side opposite to the first main surface Wa. Hereinafter, it is assumed that the substrate W is a semiconductor wafer. The substrate W has, for example, a circular plate shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less. A pattern is formed on the main surface of the substrate W. The pattern mentioned here includes, for example, at least one of wiring patterns, electrode patterns, semiconductor patterns, and insulating patterns. The aspect ratio of the pattern is, for example, 5 or more and 500 or less. The pattern width is, for example, 3 nm or more and 50 nm or less. Such high aspect ratio patterns are prone to breakage.

[0048] exist Figure 1 In this example, the substrate processing apparatus 100 includes a transfer block 110, a processing block 120, and a control unit 90. The processing block 120 is mainly responsible for processing the substrate W, and the transfer block 110 is mainly responsible for transporting the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0049] The transfer block 110 includes a loading port 111 and a first conveying section 112. A substrate receiving container (hereinafter referred to as a carrier) C, which is transferred in from the outside, is placed on the loading port 111. On the carrier C, a plurality of substrates W are housed in a configuration, for example, with spacing between them along a vertical direction. Figure 1 In the example, there are multiple loading ports 111.

[0050] The first transfer unit 112 is a transfer robot that can remove unprocessed substrates W from the carriers C placed in each loading port 111. The first transfer unit 112 can also be referred to as a transfer robot. The first transfer unit 112 transfers the unprocessed substrates W removed from the carriers C to the processing block 120. The processing block 120 can process the unprocessed substrates W. In addition, the first transfer unit 112 can receive processed substrates W from the processing block 120 and transfer the processed substrates W to the carriers C in the loading ports 111.

[0051] exist Figure 1 In this example, processing block 120 includes a plurality of processing units 1 and a second conveying unit 122. The second conveying unit 122 is a conveying robot that can move the substrate W between the first conveying unit 112 and the plurality of processing units 1. Figure 1 In this example, the processing block 120 also includes a mounting section 123. The mounting section 123 is, for example, a shelf that can hold a plurality of substrates W arranged vertically. The first conveying section 112 places the unprocessed substrates W into the mounting section 123. The second conveying section 122 removes the unprocessed substrates W from the mounting section 123 and conveys them to the processing unit 1. The processing unit 1 processes the substrates W. The configuration of the processing unit 1 will be described later. The second conveying section 122 removes the processed substrates W from the processing unit 1 and conveys them to the mounting section 123. The first conveying section 112 removes the substrates W from the mounting section 123 and conveys them to the carrier C of the loading port 111.

[0052] exist Figure 1 In this example, a plurality of processing units 1 (e.g., 4) are arranged to surround the second conveying unit 122 in a top view. This second conveying unit 122 may also be referred to as a central robot. At various locations in a top view, the plurality of processing units 1 may be stacked vertically. That is, a plurality of towers TW (4 in the figure) composed of a plurality of processing units 1 stacked vertically may be arranged to surround the second conveying unit 122.

[0053] The control unit 90 comprehensively controls the substrate processing apparatus 100. Specifically, the control unit 90 controls the first conveying unit 112, the second conveying unit 122, and the processing unit 1. Figure 2 This is a block diagram schematically illustrating an example of the internal structure of the control unit 90. The control unit 90 is an electronic circuit, including, for example, a data processing unit 91 and a storage unit 92. Figure 2 In a specific example, the data processing unit 91 and the storage unit 92 are interconnected via a bus 93. The data processing unit 91 may be an arithmetic processing device such as a CPU (Central Processing Unit). The storage unit 92 may have a non-transitory storage unit (such as ROM (Read Only Memory)) 921 and a temporary storage unit (such as RAM (Random Access Memory)) 922. A program, for example, specifying the processing to be executed by the control unit 90, may be stored in the non-transitory storage unit 921. The program is executed by the data processing unit 91, and the control unit 90 can execute the processing specified by the program. Of course, some or all of the processing executed by the control unit 90 may be executed by hardware such as dedicated logic circuits.

[0054] <Summary of Processing Unit>

[0055] Figure 3 This is a longitudinal sectional view that schematically illustrates an example of the configuration of the processing unit 1 in the first embodiment. Furthermore, it is not necessary for all processing units 1 belonging to the substrate processing apparatus 100 to have... Figure 3 The illustrated configuration. At least one processing unit 1 of the substrate processing apparatus 100 only needs to have Figure 3 The example shown is sufficient.

[0056] The processing unit 1 includes a substrate holding part 2, an ejection part 3, and a substrate heating part 4.

[0057] exist Figure 3 In this example, a chamber 10 is also provided in the processing unit 1. The chamber 10 has a box-shaped shape, and its internal space corresponds to the processing space for processing the substrate W. An openable and closable transfer inlet (not shown) is provided in the chamber 10. The second transfer unit 122 transfers the unprocessed substrate W into the chamber 10 through the transfer inlet, and also transfers the processed substrate W out of the chamber 10 through the transfer inlet.

[0058] exist Figure 3 In this example, a fan filter unit 11 is provided at the top of the chamber 10. The fan filter unit 11 draws in outside air from the chamber 10, cleans it, and then delivers the cleaned air into the interior of the chamber 10. Through the operation of the fan filter unit 11, a downward flow of clean air is formed within the chamber 10. Figure 3 In this example, the upstream end of the exhaust pipe 13 is connected to the lower part of the side wall of the chamber 10. The gas inside the chamber 10 is discharged to the outside through the exhaust pipe 13.

[0059] The substrate holding part 2 is disposed within the chamber 10, holding the substrate W in a horizontal position and rotating the substrate W about the rotation axis Q1. The horizontal position referred to here means that the thickness direction of the substrate W is along the vertical direction. The rotation axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. This substrate holding part 2 can also be referred to as a rotary chuck.

[0060] Here, the first main surface Wa of the patterned substrate W faces vertically upward. That is, in Figure 3 In this example, the first main surface Wa of the substrate W held by the substrate holding portion 2 corresponds to the upper surface. The pattern includes, for example, at least one of wiring patterns, insulating patterns, and semiconductor patterns.

[0061] exist Figure 3 In this example, the substrate holding part 2 includes a rotating base 21, chuck pins 22, and a rotation drive part 23. The rotating base 21 has a plate-like shape (e.g., a circular plate shape) and is arranged with its thickness direction along the vertical direction. A plurality of chuck pins 22 are provided on the upper surface of the rotating base 21. The plurality of chuck pins 22 are arranged at equal intervals along the circumference of the rotation axis Q1. The plurality of chuck pins 22 are displaceable between a holding position and a release position, which will be described later. The holding position is the position where the chuck pins 22 abut against the periphery of the substrate W. The substrate W is held by stopping at each holding position by the plurality of chuck pins 22. Figure 3 In the diagram, chuck pins 22 are shown stopped at the holding position. The release position is the position where each chuck pin 22 leaves the substrate W. By stopping each of the plurality of chuck pins 22 at its respective release position, the holding of the plurality of chuck pins 22 on the substrate W is released. The substrate holding unit 2 also includes a pin drive unit (not shown) that displaces the chuck pins 22. The pin drive unit includes a drive source such as a motor or cylinder and is controlled by the control unit 9.

[0062] The rotary drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the rotary base 21, and the shaft 231 extends from the lower surface of the rotary base 21 along the rotation axis Q1. The motor 232 is controlled by the control unit 90 to rotate the shaft 231 about the rotation axis Q1. As a result, the rotary base 21, the chuck pin 22, and the base plate W rotate as a whole about the rotation axis Q1.

[0063] Furthermore, the substrate holding section 2 does not necessarily have to have a chuck pin 22. For example, the substrate holding section 2 can hold the substrate W by means of a chuck such as a vacuum chuck, an electrostatic chuck, or a Bernoulli chuck.

[0064] The ejection section 3 ejects a processing liquid onto the first main surface Wa of the substrate W held by the substrate holding section 2. For example... Figure 3 As shown, the ejection section 3 includes at least one nozzle 30. The nozzle 30 ejects processing liquid onto the first main surface Wa of the substrate W held by the substrate holding section 2. Here, since the first main surface Wa corresponds to the upper surface of the substrate W, the nozzle 30 is positioned vertically above the substrate W held by the substrate holding section 2. The nozzle 30 is, for example, a straight nozzle that ejects processing liquid in a continuous flow.

[0065] exist Figure 3 In the example, nozzle 30 refers to nozzle 30c, nozzle 30w, nozzle 30ia, and nozzle 30ib. Figure 3 In the example, nozzles 30c, 30w, 30ia, and 30ib extend along the vertical direction. Figure 3 In the example, an outlet 3c is formed on the lower surface of nozzle 30c, an outlet 3w is formed on the lower surface of nozzle 30w, an outlet 3ia is formed on the lower surface of nozzle 30ia, and an outlet 3ib is formed on the lower surface of nozzle 30ib. Nozzle 30c sprays the drug solution from outlet 3c, nozzle 30w sprays the rinsing solution from outlet 3w, nozzle 30ia sprays the first drying solution from outlet 3ia, and nozzle 30ib sprays the second drying solution from outlet 3ib. The drug solution, rinsing solution, first drying solution, and second drying solution are all examples of treatment solutions, and specific examples will be described later.

[0066] Nozzles 30c, 30w, 30ia, and 30ib spray processing liquid into the center of the first main surface Wa of the substrate W held by the substrate holding part 2. Figure 3 In the example, nozzles 30c, 30w, 30ia, and 30ib are adjacent to each other in the horizontal direction and are fixed to each other. Figure 3 In this example, nozzles 30c, 30w, 30ia, and 30ib are disposed inside the opposing member 60. The opposing member 60 has, for example, a cylindrical shape. The opposing member 60 has a hollow shape, with the lower port of the hollow portion opening on the lower surface of the opposing member 60. Nozzles 30c, 30w, 30ia, and 30ib are disposed within the hollow portion of the opposing member 60, and the treatment liquid ejected from each nozzle 30 flows out from the lower port of the opposing member 60. Figure 3 In this example, the opposing member 60 is disposed at a position facing the central portion of the substrate W held by the substrate holding portion 2 in the vertical direction.

[0067] Nozzle 30 is connected to the downstream end of supply pipe 31, and the upstream end of supply pipe 31 is connected to the treatment fluid supply source. Figure 3 In the example, supply pipe 31 refers to supply pipe 31c, supply pipe 31w, supply pipe 31ia and supply pipe 31ib.

[0068] The downstream end of the supply pipe 31c is connected to the nozzle 30c, and the upstream end of the supply pipe 31c is connected to the liquid supply source. The liquid supply source has a tank (not shown) for storing the liquid and supplies the liquid to the upstream end of the supply pipe 31c. Examples of liquids that can be used include fluorinated nitric acid obtained by mixing hydrofluoric acid, nitric acid, and water; hydrofluoric acid-hydrogen peroxide aqueous solution (FPM) obtained by mixing hydrofluoric acid, hydrogen peroxide, and water; tetramethylammonium hydroxide (TMAH); a mixture of sulfuric acid and hydrogen peroxide solution (SPM); ammonia; a mixture of ammonia, hydrogen peroxide, and water (SC-1); and a mixture of hydrogen chloride, hydrogen peroxide, and water (SC-2). Furthermore, the liquid can be a mixture or a single liquid. For example, single liquids such as hydrofluoric acid (HF), hydrogen peroxide solution, and sulfuric acid can be used as the liquid.

[0069] The downstream end of the supply pipe 31w is connected to the nozzle 30w, and the upstream end of the supply pipe 31w is connected to the flushing fluid supply source. The flushing fluid supply source has a tank (not shown) for storing flushing fluid and supplies flushing fluid to the upstream end of the supply pipe 31w. For example, pure water, carbon dioxide water, or ozone water can be used as the flushing fluid.

[0070] The downstream end of supply pipe 31ia is connected to nozzle 30ia, and the upstream end of supply pipe 31ia is connected to a first drying liquid supply source. The first drying liquid supply source has a tank (not shown) for storing the first drying liquid and supplies the drying liquid to the upstream end of supply pipe 31ia. The downstream end of supply pipe 31ib is connected to nozzle 30ib, and the upstream end of supply pipe 31ib is connected to a second drying liquid supply source. The second drying liquid supply source has a tank (not shown) for storing the second drying liquid and supplies the drying liquid to the upstream end of supply pipe 31ib. The surface tension of the second drying liquid is lower than that of the first drying liquid. The miscibility of the first drying liquid with the rinsing liquid is higher than that of the second drying liquid with the rinsing liquid. The miscibility of the first drying liquid with the second drying liquid is, for example, higher than that of the second drying liquid with the rinsing liquid. Specifically, as the first drying liquid, an organic solvent such as isopropanol can be used, for example. As the second drying liquid, a fluorinated organic solvent (organofluorine compound) such as hydrofluoroolefin can be used, for example.

[0071] The first boiling point of the first drying liquid differs from the second boiling point of the second drying liquid. The first boiling point of the first drying liquid may be lower or higher than the second boiling point of the second drying liquid. When the first drying liquid is isopropanol, its first boiling point is 82.4 degrees Celsius. When the second drying liquid is Oten (registered trademark) SF70 (methoxyperfluoroheptane), its second boiling point is 110.5 degrees Celsius. In this case, the first boiling point of the first drying liquid is lower than the second boiling point of the second drying liquid. Conversely, when the second drying liquid is Oten (registered trademark) SF10 (fluoroheptane), its second boiling point is 71.5 degrees Celsius. In this case, the first boiling point of the first drying liquid is higher than the second boiling point of the second drying liquid.

[0072] A supply valve 32 and a flow regulating valve 33 are installed on the supply pipe 31. Figure 3 In this example, a supply valve 32c and a flow regulating valve 33c are installed on supply pipe 31c, a supply valve 32w and a flow regulating valve 33w are installed on supply pipe 31w, a supply valve 32ia and a flow regulating valve 33ia are installed on supply pipe 31ia, and a supply valve 32ib and a flow regulating valve 33ib are installed on supply pipe 31ib. The supply valve 32 switches the opening and closing of supply pipe 31. The flow regulating valve 33 adjusts the flow rate of the processed liquid flowing through supply pipe 31. The flow regulating valve 33 can be a mass flow controller. The supply valve 32 and the flow regulating valve 33 are controlled by the control unit 90.

[0073] The ejection unit 3 ejects various processing liquids onto the first main surface Wa of the substrate W in the order described below. Thus, the processing unit 1 can sequentially perform various processing on the first main surface Wa of the substrate W, corresponding to the type of processing liquid. Specific processing methods will be described later.

[0074] exist Figure 3 In this example, the opposing member 60 is configured to eject gas onto the first main surface Wa of the substrate W held by the substrate holding part 2. Figure 3 In this example, the space outside the nozzle 30 in the hollow portion of the opposing member 60 functions as a gas flow path 30g. The lower port of the lower surface of the opposing member 60 corresponds to the outlet of the gas flow path 30g.

[0075] exist Figure 3 In this example, the upper part of the opposing member 60 is connected to the downstream end of the supply pipe 31g. That is, the downstream end of the supply pipe 31g is connected to the gas flow path 30g. The upstream end of the supply pipe 31g is connected to a gas supply source. The gas supply source has a storage section (not shown) for storing inactive gas, and supplies the inactive gas to the upstream end of the supply pipe 31g. The inactive gas includes, for example, at least one of nitrogen and rare gases. The rare gas includes, for example, argon.

[0076] A supply valve 32g, a flow regulating valve 33g, and a heater 34g are provided in the supply pipe 31g. The supply valve 32g switches the opening and closing of the supply pipe 31g. The flow regulating valve 33g regulates the flow rate of the inert gas flowing through the supply pipe 31g. The heater 34g heats the inert gas flowing through the supply pipe 31g. The heater 34g can be, for example, a resistance heater with an electric heating wire. The supply valve 32g, the flow regulating valve 33g, and the heater 34g are controlled by the control unit 90.

[0077] When the supply valve 32g is opened and the heater 34g is activated, high-temperature inactive gas is ejected from the center of the lower surface of the opposing member 60 (i.e., the lower port of the gas flow path 30g) towards the center of the first main surface Wa of the substrate W. This promotes the drying of the substrate W.

[0078] exist Figure 3 In this example, a movement drive unit 35 is provided in the processing unit 1. The movement drive unit 35 moves the nozzle, which includes nozzles 30c, 30w, 30ia, 30ib, and the opposing member 60, together. Specifically, the movement drive unit 35 moves the nozzle between a processing position and a standby position, which will be described later. The processing position is the position where nozzles 30c, 30w, 30ia, and 30ib spray processing liquid onto the first main surface Wa of the substrate W, for example, a position facing the center of the first main surface Wa of the substrate W in the vertical direction. The processing position is also the position where the opposing member 60 sprays inactive gas onto the first main surface Wa of the substrate W. Figure 3 In the example, this indicates the nozzle that stops at the processing position. The standby position is the position where nozzles 30c, 30w, 30ia, and 30ib do not spray processing liquid onto the first main surface Wa of the substrate W, for example, a position radially outward from the substrate holding portion 2. The standby position is also the position where the opposing member 60 does not spray inactive gas onto the first main surface Wa of the substrate W.

[0079] exist Figure 3 This is an example illustrating the specific configuration of the motion drive unit 35. Figure 3In this example, the moving drive unit 35 includes an arm 351, a support column 352, and a drive source 353. The support column 352 is disposed radially outward of the shield 7 (described later) and extends vertically. The arm 351 extends horizontally, with its front end connected to the nozzle and its base connected to the support column 352. The drive source 353 is controlled by the control unit 90 to rotate the support column 352 about its central axis Q2 in both directions within a predetermined angle range. The drive source 353 includes, for example, a motor. If the support column 352 rotates about its central axis Q2 in both directions within the predetermined angle range, the nozzle reciprocates circumferentially along the central axis Q2. The support column 352 is positioned such that the processing position and the standby position are located on the movement trajectory of the nozzle. Furthermore, the moving drive unit 35 is not necessarily limited to... Figure 3 The method may include a direct-acting mechanism such as a linear motor.

[0080] The substrate heating section 4 heats the second main surface Wb of the substrate W held by the substrate holding section 2. Figure 3 In this example, the substrate heating part 4 is positioned opposite the second main surface Wb of the substrate W in the vertical direction. Figure 3 In the example, since the second main surface Wb of the substrate W is equivalent to the lower surface, the substrate heating part 4 is disposed directly below the substrate W.

[0081] exist Figure 3 In this example, the substrate heating section 4 includes a nozzle 40. The nozzle 40 ejects a heat medium onto the second main surface Wb of the substrate W. Figure 3 In this example, since the second main surface Wb of the substrate W corresponds to the lower surface, the nozzle 40 can also be referred to as the lower surface nozzle. Figure 3 In this example, a through hole is formed in the center of the rotating base 21 of the substrate holding portion 2, and the shaft 231 is a hollow shaft. The through hole of the rotating base 21 and the hollow portion of the shaft 231 are connected in the vertical direction. A portion of the nozzle 40 is disposed in the through hole. An outlet is formed on the upper surface of the nozzle 40, and the outlet of the nozzle 40 faces the center of the second main surface Wb of the substrate W in the vertical direction. The nozzle 40 ejects a heat medium into the center of the second main surface Wb of the substrate W.

[0082] The nozzle 40 is connected to the downstream end of the supply pipe 41. The supply pipe 41 extends inside and through the shaft 231. The upstream end of the supply pipe 41 is connected to a heat medium supply source. The heat medium is a fluid (gas or liquid), and more specifically, a liquid such as water. The heat medium supply source has, for example, a tank (not shown) for storing the heat medium, and supplies the heat medium to the upstream end of the supply pipe 41.

[0083] exist Figure 3In this example, a supply valve 42, a flow regulating valve 43, and a heater 44 are provided in the supply pipe 41. The supply valve 42 switches the opening and closing of the supply pipe 41. The flow regulating valve 43 regulates the flow rate of the hot medium flowing through the supply pipe 41. The flow regulating valve 43 can be a mass flow controller. The heater 44 heats the hot medium flowing through the supply pipe 41. The heater 44 can be, for example, a resistance heater with an electric heating wire. The supply valve 42, the flow regulating valve 43, and the heater 44 are controlled by the control unit 90.

[0084] When the supply valve 42 is opened and the heater 44 is activated, a high-temperature hot medium is ejected from the nozzle 40 toward the center of the second main surface Wb of the substrate W. The hot medium landing on the center of the second main surface Wb of the substrate W is subjected to centrifugal force due to the rotation of the substrate W, flowing radially outward along the second main surface Wb and dissipating outward from the periphery of the substrate W. As the high-temperature hot medium flows along the second main surface Wb of the substrate W, heat moves from the hot medium to the substrate W, thus heating the substrate W.

[0085] exist Figure 3 In this example, the processing unit 1 is provided with a shield 7 and a shield lifting drive unit 71. The shield 7 has a cylindrical shape with the rotation axis Q1 as the central axis, and surrounds the substrate holding part 2. The shield 7 can catch the processing liquid and heat medium splashed from the periphery of the substrate W. The shield lifting drive unit 71 can raise and lower the shield 7 between the upper position and the lower position described later. The upper position is when the upper end of the shield 7 is vertically above the substrate W held by the substrate holding part 2. When the shield 7 is in the upper position, it can catch the processing liquid and heat medium splashed from the periphery of the substrate W. The lower position is a position lower than the upper position, for example, when the upper end of the shield 7 is vertically below the upper surface of the rotating base 21.

[0086] exist Figure 3 In this example, a plurality of protective shields 7 are provided. The plurality of protective shields 7 are arranged concentrically. The plurality of protective shields 7 can be used separately depending on the type of treatment fluid. Figure 3 In this example, cups 72 are provided corresponding to each shield 7. Each cup 72 has an annular (e.g., circular) recess (groove) surrounding the rotation axis Q1. Each cup 72 receives the processing liquid flowing down the inner circumferential surface of the corresponding shield 7. An upstream end of a discharge pipe 12 is connected to each cup 72, for example, at its bottom. The processing liquid received by each cup 72 is discharged to the outside of the processing unit 1 via the discharge pipe 12.

[0087] <An example of the operation of a substrate processing apparatus>

[0088] Next, an example of the action of processing unit 1 will be explained. Figure 4 This is a flowchart illustrating an example of the operation of processing unit 1. Control unit 90 causes processing unit 1 to perform steps S1 to S8 according to a preset processing sequence (procedure). Figure 5 This is a diagram that schematically illustrates an example of the configuration of processing unit 1 in the first drying liquid supply process, described later. Figure 6 This is a diagram that schematically represents an example of the state of processing unit 1 in the second drying process, which will be described later.

[0089] First, the second conveying unit 122 conveys the substrate W to the processing unit 1. Then, the substrate holding unit 2 holds the substrate W received from the second conveying unit 122 (step S1: holding process). Specifically, the substrate holding unit 2 moves a plurality of chuck pins 22 from their released positions to holding positions. Thus, the plurality of chuck pins 22 hold the substrate W. The substrate holding unit 2 continues to hold the substrate W until the processing of the substrate W is completed.

[0090] Next, the substrate holding unit 2 starts rotating the substrate W (step S2: rotation start process). The substrate holding unit 2 can continue to rotate the substrate W until the processing of the substrate W is completed.

[0091] Next, the processing unit 1 supplies the chemical solution to the first main surface Wa of the substrate W (step S3: chemical solution process). First, the movement drive unit 35 moves the nozzle to the processing position. Additionally, the shield lifting drive unit 71 raises the shield 7 for the chemical solution to the upper position. Then, the control unit 90 opens the supply valve 32c. That is, the control unit 90 switches the supply valve 32c from the closed state to the open state. As a result, the chemical solution is sprayed from the nozzle 30c onto the first main surface Wa of the rotating substrate W. The chemical solution landing on the first main surface Wa of the substrate W is subjected to centrifugal force due to the rotation of the substrate W and flows radially outward, scattering from the periphery of the substrate W. At this time, by acting on the first main surface Wa of the substrate W, the first main surface Wa of the substrate W is subjected to chemical solution treatment corresponding to the type of chemical solution. For example, the processing unit 1 performs a cleaning process to remove impurities from the first main surface Wa of the substrate W, or an etching process to etch a predetermined film on the first main surface Wa of the substrate W. The liquid medicine that scatters from the periphery of the substrate W is caught by the protective cover 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0092] If the substrate W has been sufficiently processed, the control unit 90 closes the supply valve 32c. As a specific example, the control unit 90 measures the elapsed time from the start of the liquid spraying and determines whether this elapsed time is greater than or equal to a predetermined liquid treatment time. The liquid treatment time is preset to be the time required for sufficient liquid treatment. The elapsed time is measured, for example, by a timer circuit (not shown) belonging to the control unit 90. When the elapsed time is greater than or equal to the liquid treatment time, the control unit 90 switches the supply valve 32c from the open state to the closed state.

[0093] Next, the processing unit 1 supplies rinsing liquid to the first main surface Wa of the substrate W (step S4: rinsing process). If the rinsing liquid shield 7 is different from the chemical solution shield 7, the shield lifting drive unit 71 adjusts the shield 7 appropriately, so that the rinsing liquid shield 7 is in the upper position. Then, the control unit 90 opens the supply valve 32w. That is, the control unit 90 switches the supply valve 32w from the closed state to the open state. As a result, rinsing liquid is sprayed from the nozzle 30w onto the first main surface Wa of the rotating substrate W. The rinsing liquid landing on the first main surface Wa of the substrate W is subjected to the centrifugal force accompanying the rotation of the substrate W and flows radially outward, scattering from the periphery of the substrate W. At this time, the rinsing liquid washes away the chemical solution on the first main surface Wa of the substrate W radially outward. As a result, the processing liquid on the first main surface Wa of the substrate W is replaced by rinsing liquid from the chemical solution. The processing liquid scattered from the periphery of the substrate W is caught by the shield 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0094] If sufficient replacement of the medicated solution with the flushing fluid has been achieved, the control unit 90 closes the supply valve 32w. As a specific example, the control unit 90 measures the elapsed time from the start of flushing fluid spraying; if this elapsed time exceeds a predetermined flushing time, it switches the supply valve 32w from the open state to the closed state. The flushing time is preset to the time required for sufficient replacement of the medicated solution with the flushing fluid.

[0095] Next, the processing unit 1 supplies the first drying liquid to the first main surface Wa of the substrate W (step S5: first drying liquid supply process). If the protective cover 7 for the drying liquid is different from the protective cover 7 for the rinsing liquid, the protective cover lifting drive unit 71 appropriately raises and lowers the protective cover 7, causing the protective cover 7 for the first drying liquid to rise to the upper position. Then, the control unit 90 opens the supply valve 32ia. That is, the control unit 90 switches the supply valve 32ia from the closed state to the open state.

[0096] When the supply valve 32ia is open, such as Figure 5 As shown, a first drying liquid is sprayed from the nozzle 30ia's outlet 3ia onto the first main surface Wa of the rotating substrate W. The temperature of the first drying liquid can be, for example, room temperature (e.g., around 25 degrees Celsius). The temperature of the first drying liquid mentioned here refers to, for example, the temperature of the first drying liquid at the outlet 3ia. Furthermore, the room temperature mentioned here includes, for example, the temperature of the first drying liquid when a heater for heating the first drying liquid is not installed upstream of the outlet 3ia, or when that heater is not operating. That is, room temperature includes the temperature of the unheated first drying liquid.

[0097] The first drying liquid from nozzle 30ia falls onto the center of the first main surface Wa of substrate W. The first drying liquid falling on the first main surface Wa is subjected to centrifugal force accompanying the rotation of substrate W and flows radially outward, scattering from the periphery of substrate W. At this time, the rinsing liquid on the first main surface Wa of substrate W is flushed away by the drying liquid, and the processing liquid on the first main surface Wa of substrate W is replaced by the first drying liquid. The processing liquid scattering from the periphery of substrate W is caught by the protective cover 7 and discharged to the outside of chamber 10 via discharge pipe 12.

[0098] Here, the rotational speed of the substrate W in the first drying liquid supply process can be set, for example, to be 150 rpm or more and 600 rpm or less, or to be 200 rpm or more and 400 rpm or less. As a more specific example, the rotational speed can be set to 300 rpm. The flow rate of the first drying liquid is, for example, preset to be about 100 mL / min or more, and more specifically, can be set to 250 mL / min or more.

[0099] Furthermore, the processing unit 1 heats the second main surface Wb of the substrate W when the first drying liquid is supplied. That is, the substrate heating unit 4 heats the second main surface Wb of the substrate W. As a more specific example, the control unit 90 opens the supply valve 42 and activates the heater 44. Thus, as Figure 5 As shown, a high-temperature heat medium (e.g., warm water) is ejected from nozzle 40 onto the center of the second main surface Wb of the rotating substrate W. The heat medium landing on the center of the second main surface Wb of the substrate W is carried radially outward by the centrifugal force of the substrate W's rotation, dissipating from the periphery of the substrate W. As the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, thus heating the substrate W. Heat from the substrate W is transferred to the first drying liquid on the first main surface Wa. Consequently, the first drying liquid on the first main surface Wa of the substrate W is also heated and its temperature rises.

[0100] The substrate heating unit 4 heats the second main surface Wb of the substrate W to a first temperature (first temperature value). The first temperature can be preset to a value corresponding to the first boiling point of the first drying liquid. Here, the second main surface Wb of the substrate W can have the following temperature distribution. That is, in this temperature distribution, the temperature is high at the landing position of the heat medium (here, the central part), and decreases radially away from the landing position. The first temperature mentioned here can be, for example, the maximum value of the temperature distribution. The first temperature can be 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The first temperature can be lower than the first boiling point of the first drying liquid. As a specific example, the first temperature can be set to 80 degrees Celsius.

[0101] Specifically, heater 44 heats the heat medium by setting the temperature of the heat medium (hereinafter referred to as the medium temperature) as the first medium temperature (first medium temperature value). The medium temperature referred to here is, for example, the temperature of the heat medium at the outlet of nozzle 40. The first medium temperature can be, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. As a specific example, the first medium temperature can be set to 80 degrees Celsius. The first medium temperature can be lower than the first boiling point of the first drying liquid. In the case where the heat medium is, for example, water, the first medium temperature can be set to 90 degrees Celsius, which is 10 degrees lower than the boiling point of the hotter medium (100 degrees Celsius). This allows compliance with SEMI specifications.

[0102] The flow regulating valve 43 can adjust the flow rate of the heat medium to, for example, a value greater than the flow rate of the first drying liquid. More specifically, the flow regulating valve 43 can adjust the flow rate of the heat medium to 1000 mL / min or more, or even 1500 mL / min or more.

[0103] As described above, in the first drying liquid supply process, the processing unit 1 heats the second main surface Wb of the substrate W and supplies the first drying liquid to the first main surface Wa of the substrate W. As a result, the temperature of the first drying liquid on the first main surface Wa of the substrate W also rises. By increasing the temperature of the first drying liquid, the replacement efficiency from the rinsing liquid to the first drying liquid can be improved.

[0104] If sufficient replacement of the self-rinsing fluid with the first drying fluid is achieved, the control unit 90 closes the supply valve 32ia. As a specific example, the control unit 90 measures the elapsed time from the start of the first drying fluid ejection; if this elapsed time exceeds a predetermined first drying fluid supply time, it switches the supply valve 32ia from the open state to the closed state. The first drying fluid supply time is preset to the time required for sufficient replacement of the self-rinsing fluid with the first drying fluid.

[0105] Next, the processing unit 1 supplies the second drying liquid to the first main surface Wa of the substrate W (step S6: second drying liquid supply process). If the protective cover 7 for the second drying liquid differs from the protective cover 7 for the first drying liquid, the protective cover lifting drive unit 71 appropriately raises and lowers the protective cover 7, causing the protective cover 7 for the second drying liquid to rise to the upper position. Then, the control unit 90 opens the supply valve 32ib. That is, the control unit 90 switches the supply valve 32ib from the closed state to the open state.

[0106] When the supply valve 32ib is open, such as Figure 6As shown, a second drying liquid is ejected from the nozzle 30ib through the outlet 3ib onto the first main surface Wa of the rotating substrate W. The temperature of the second drying liquid can be, for example, room temperature (e.g., 25 degrees Celsius). The temperature of the second drying liquid mentioned here refers to, for example, the temperature of the second drying liquid at the outlet 3ib. Furthermore, the room temperature mentioned here includes, for example, the temperature of the second drying liquid when a heater for heating the second drying liquid is not installed upstream of the outlet 3ib, or when that heater is not operating. That is, room temperature includes the temperature of the unheated second drying liquid.

[0107] The second drying liquid from nozzle 30ib falls onto the center of the first main surface Wa of substrate W. The second drying liquid falling on the first main surface Wa is subjected to centrifugal force accompanying the rotation of substrate W and flows radially outward, scattering from the periphery of substrate W. At this time, the first drying liquid on the first main surface Wa of substrate W is washed away by the second drying liquid, and the processing liquid on the first main surface Wa of substrate W is replaced by the second drying liquid. The processing liquid scattering from the periphery of substrate W is caught by the protective cover 7 and discharged to the outside of chamber 10 via discharge pipe 12.

[0108] Here, the rotational speed of the substrate W in the second drying liquid supply process can be set, for example, to be 150 rpm or more and 600 rpm or less, or to be 200 rpm or more and 400 rpm or less. As a more specific example, the rotational speed can be set to 300 rpm. The flow rate of the second drying liquid is, for example, preset to be about 100 mL / min or more, and more specifically, can be set to 250 mL / min or more.

[0109] Furthermore, processing unit 1 heats the second main surface Wb of substrate W when the second drying liquid is supplied. That is, substrate heating unit 4 heats the second main surface Wb of substrate W. As a more specific example, control unit 90 opens supply valve 42 and activates heater 44. Thus, as Figure 6 As shown, a high-temperature heat medium (e.g., warm water) is sprayed from nozzle 40 into the center of the second main surface Wb of the rotating substrate W. As a result, the substrate W and the second drying liquid on the first main surface Wa of the substrate W are also heated.

[0110] The substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature (second temperature value). The second temperature can be preset to a value corresponding to the second boiling point of the second drying liquid. The second temperature is, for example, the maximum value in the temperature distribution of the second main surface Wb. As a specific example, the second boiling point of the second drying liquid is set to be higher than the first boiling point of the first drying liquid. For example, in the case where the first drying liquid and the second drying liquid are isopropanol and hydrofluoroolefin, respectively, the second boiling point of the second drying liquid (110.5 degrees Celsius) is higher than the first boiling point of the first drying liquid (82.4 degrees Celsius). In this case, the second temperature is set to be higher than the temperature of the second main surface Wb of the substrate W in the first drying liquid supply process (here, the first temperature). For example, the second temperature can be 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. In addition, the second temperature can be higher than the first boiling point of the first drying liquid. The second temperature can be lower than the second boiling point of the second drying liquid. As a specific example, the second temperature can be set to around 89.9 degrees Celsius.

[0111] Specifically, heater 44 heats the heat medium by making the temperature of the heat medium a second medium temperature (second medium temperature value). Figure 7 In this example, the temperature of the second medium is higher than the temperature of the hot medium (the temperature of the first medium) in the first drying liquid supply process. The temperature of the second medium can be, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. Furthermore, the temperature of the second medium can be higher than the first boiling point of the first drying liquid. The temperature of the second medium can be lower than the second boiling point of the second drying liquid. For example, if the hot medium is water, the temperature of the second medium can be set to 90 degrees Celsius, which is 10 degrees lower than the boiling point of the hotter medium (100 degrees Celsius). This allows compliance with SEMI specifications. As a specific example, the temperature of the second medium can be set to approximately 89.9 degrees Celsius.

[0112] The flow regulating valve 43 can adjust the flow rate of the heat medium to, for example, a value greater than the flow rate of the second drying liquid. More specifically, the flow regulating valve 43 can adjust the flow rate of the heat medium to 1000 mL / min or more, or even 1500 mL / min or more.

[0113] As described above, in the second drying liquid supply process, processing unit 1 heats the second main surface Wb of substrate W and supplies the second drying liquid to the first main surface Wa of substrate W. Consequently, the temperature of the second drying liquid on the first main surface Wa of substrate W also rises. By increasing the temperature of the second drying liquid, the displacement efficiency from the first drying liquid to the second drying liquid can be improved.

[0114] If sufficient replacement from the first drying liquid to the second drying liquid is achieved, the processing unit 1 dries the substrate W (step S7: drying process). Specifically, the processing unit 1 measures the elapsed time from the start of the second drying liquid ejection and determines whether this elapsed time is greater than or equal to a predetermined second drying liquid supply time. The second drying liquid supply time is preset to be the time during which sufficient replacement from the first drying liquid to the second drying liquid is achieved. The second drying liquid supply time is set to, for example, several tens of seconds or more, and as a specific example, it can be set to about 40 seconds. Furthermore, when this elapsed time is greater than or equal to the second drying liquid supply time, the processing unit 1 dries the substrate W. Specifically, the control unit 90 closes the supply valve 32ib. In addition, the substrate heating unit 4 stops heating the second main surface Wb of the substrate W.

[0115] Furthermore, the control unit 90 instructs the substrate holding unit 2 to increase the rotational speed of the substrate W. For example, the substrate holding unit 2 can rotate the substrate W at a rotational speed of 800 rpm or more and 2500 rpm or less, or it can rotate the substrate W at a rotational speed of 800 rpm or more and 1500 rpm or less. In addition, the substrate holding unit 2 can gradually (e.g., in stages) increase the rotational speed of the substrate W.

[0116] Processing unit 1 can supply inert gas to the center of the first main surface Wa of substrate W. Specifically, control unit 90 can open supply valve 32g and activate heater 34g. As a result, high-temperature inert gas is ejected from the gas outlet (i.e., the lower port of gas flow path 30g) at the center of the lower surface of opposing member 60 to the center of the first main surface Wa of substrate W. The inert gas that touches the center of the first main surface Wa of substrate W flows radially outward along the first main surface Wa. Heater 34g can heat the inert gas to, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The temperature of the inert gas can, for example, be the temperature of the inert gas at the gas outlet of gas flow path 30g. Flow regulating valve 33g can adjust the flow rate of the inert gas to, for example, 10 L / min or higher and 300 L / min or lower.

[0117] If the second drying liquid has fully evaporated, the processing unit 1 stops the ejection of the inactive gas and stops the rotation of the substrate W. As a specific example, the control unit 90 measures the elapsed time since the ejection of the second drying liquid stopped and determines whether the measured time is greater than or equal to a predetermined drying time. The drying time is preset to the time required for the substrate W to be sufficiently dried. When the elapsed time is greater than or equal to the drying time, the control unit 90 switches the supply valve 32g from the open state to the closed state and causes the substrate holding unit 2 to stop the rotation of the substrate W. Additionally, the movement drive unit 35 moves the nozzle to the standby position, and the shield lifting drive unit 71 lowers the shield 7 to the lower position.

[0118] Next, the substrate holding section 2 releases its grip on the substrate W (step S8: release holding process). Then, the second conveying section 122 removes the processed substrate W from the processing unit 1.

[0119] As described above, processing unit 1 can process substrate W. Furthermore, in this embodiment, a first drying liquid supply step is performed after the liquid supply step, which includes a chemical solution step and a rinsing step, followed by a second drying liquid supply step. Figure 7 This is a schematic diagram illustrating the timing of the processing unit 1 in the first embodiment, the time-varying temperature of the thermal medium, and the time-varying temperature of the second main surface Wb of the substrate W, as a first example. Figure 7 In the example, the temperature of the second principal surface Wb of the substrate W represents the maximum value of the temperature distribution on the second principal surface Wb. This point is also true in the other figures referred to below.

[0120] exist Figure 7 In the example, at time point t1, the control unit 90 switches the supply valve 32ia from the closed state to the open state. As a result, the first drying liquid is sprayed from the nozzle 30ia onto the first main surface Wa of the substrate W. At this time point t1, the actual first drying liquid supply process begins. That is, the replacement process from the rinsing liquid to the first drying liquid begins. Since the mixing properties of the rinsing liquid and the first drying liquid are higher than those of the rinsing liquid and the second drying liquid, the processing liquid on the substrate W can be replaced from the rinsing liquid to the first drying liquid with a higher replacement efficiency compared to the case where the rinsing liquid is replaced by the second drying liquid.

[0121] At, for example, time point t1, the control unit 90 switches the supply valve 42 from a closed state to an open state, causing the heater 44 to operate. This causes a high-temperature heat medium to be ejected from the nozzle 40 onto the second main surface Wb of the substrate W, thus heating the substrate W. Consequently, the first drying liquid on the first main surface Wa of the substrate W is also heated. Because the temperature of the first drying liquid on the first main surface Wa of the substrate W is high, the replacement efficiency from the rinsing liquid to the first drying liquid can be improved. Therefore, at the end of the first drying liquid supply process, the residual amount of rinsing liquid with high surface tension can be further reduced.

[0122] exist Figure 7 In this example, the temperature of the heat medium (first medium temperature) in the first drying liquid supply process is lower than the first boiling point bp1 of the first drying liquid. Therefore, the temperature of the first main surface Wa of the substrate W is also lower than the first boiling point bp1. This allows for more reliable suppression of boiling of the first drying liquid on the first main surface Wa of the substrate W. If the first drying liquid boils on the first main surface Wa during supply, it leads to the adhesion of particles to the first main surface Wa. In the above example, since the boiling of the first drying liquid can be more reliably suppressed, the adhesion of particles can be more reliably suppressed.

[0123] exist Figure 7 In the example, at time point t2, the control unit 90 switches the supply valve 32ia from the open state to the closed state and switches the supply valve 32ib from the closed state to the open state. At this time point t2, the actual second drying liquid supply process begins. That is, the replacement process from the first drying liquid to the second drying liquid begins. Since the mixing properties of the first drying liquid and the second drying liquid are higher than those of the rinsing liquid and the second drying liquid, the processing liquid on the substrate W can be replaced from the first drying liquid to the second drying liquid with a higher replacement efficiency compared to the replacement from the rinsing liquid to the second drying liquid.

[0124] exist Figure 7 In this example, after time point t2, the supply valve 42 also opens. As a result, a high-temperature heat medium is ejected from the nozzle 40 onto the second main surface Wb of the substrate W, thus heating the substrate W. Consequently, the second drying liquid on the first main surface Wa of the substrate W can also be heated. Figure 7 In the example, the second boiling point bp2 of the second drying liquid is higher than the first boiling point bp1 of the first drying liquid. Therefore, the second temperature is set to be higher than the first temperature. That is, in the first drying liquid supply process, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a lower first temperature corresponding to the lower first boiling point bp1 of the first drying liquid, and in the second drying liquid supply process, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a higher second temperature corresponding to the higher second boiling point bp2 of the second drying liquid. That is, the heater 44 increases the heat imparted to the heat medium at time point t2, causing the medium temperature of the heat medium to rise from the first medium temperature to the second medium temperature.

[0125] Therefore, in the second drying liquid supply process, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be further increased. That is, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be brought closer to the second boiling point bp2. Thus, the displacement efficiency from the first drying liquid to the second drying liquid can be further improved, and at the end of the second drying liquid supply process, the residual amount of the first drying liquid with high surface tension can be further reduced. Furthermore, in Figure 7 In this example, the temperature of the second medium, which is a heat medium, is above the first boiling point bp1 of the first drying liquid, and the second temperature of the second main surface Wb of the substrate W is also above the first boiling point bp1 of the first drying liquid. Therefore, the second drying liquid on the first main surface Wa of the substrate W can be raised to a higher temperature. That is, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be brought closer to the second boiling point bp2, further improving the displacement efficiency from the first drying liquid to the second drying liquid.

[0126] exist Figure 7In this example, since the temperature of the second medium, which is a heat medium, is lower than the second boiling point bp2 of the second drying liquid, the temperature of the first main surface Wa of the substrate W is also lower than the second boiling point bp2. Therefore, the boiling of the second drying liquid on the first main surface Wa of the substrate W can be suppressed more reliably. Consequently, the adhesion of particles can be suppressed more reliably.

[0127] Subsequently, in the drying process, the second drying liquid on the first main surface Wa of the substrate W evaporates, and the substrate W is dried. First, from the viewpoint of liquid materials, the surface tension of the second drying liquid is lower than that of the first drying liquid. Therefore, the breakage rate of the pattern on the first main surface Wa of the substrate W during drying can be reduced.

[0128] Furthermore, after the liquid supply process, a first drying liquid supply process is performed, followed by a second drying liquid supply process. Specifically, in the first drying liquid supply process, the rinsing liquid is replaced by a first drying liquid with high miscibility with the rinsing liquid; subsequently, in the second drying liquid supply process, the rinsing liquid is replaced by a second drying liquid with high miscibility with the first drying liquid. Therefore, from the perspective of liquid materials, the replacement from the rinsing liquid to the first drying liquid and from the first drying liquid to the second drying liquid can be performed with higher replacement efficiency. Consequently, at the end of the second drying liquid supply process, the residual amount of rinsing liquid and first drying liquid with high surface tension can be reduced. This also reduces the pattern breakage rate.

[0129] Furthermore, since the first drying liquid on the first main surface Wa of the substrate W is heated during the first drying liquid supply process, the processing liquid on the substrate W can be replaced by the first drying liquid from the rinsing liquid with a higher replacement efficiency. Therefore, from the viewpoint of temperature, the residual amount of rinsing liquid at the end time of the second drying liquid supply process can also be reduced.

[0130] Furthermore, since the second drying liquid on the first main surface Wa of the substrate W is heated to a higher temperature during the second drying liquid supply process, the residual amount of the first drying liquid can also be reduced. This also reduces the pattern breakage rate. Moreover, the second drying liquid evaporates at a higher temperature during the drying process. Therefore, the second drying liquid can evaporate in a shorter time. Since higher temperatures result in lower surface tension, the second drying liquid evaporates with lower surface tension. The reduction in surface tension and the increase in evaporation rate due to this temperature also reduce the pattern breakage rate.

[0131] Furthermore, in the example above, the case where the first boiling point bp1 of the first dried liquid is lower than the second boiling point bp2 of the second dried liquid was explained, but the first boiling point bp1 of the first dried liquid may be higher than the second boiling point bp2 of the second dried liquid. Figure 8This is a schematic diagram illustrating the timing of the processing unit 1 in the first embodiment, the time-varying temperature of the thermal medium, and the time-varying temperature of the second main surface Wb of the substrate W, as a second example.

[0132] exist Figure 8 In the example, the first boiling point bp1 of the first dried liquid is higher than the second boiling point bp2 of the second dried liquid. For example, if the first dried liquid and the second dried liquid are isopropanol and fluoroheptane respectively, the first boiling point bp1 (82.4 degrees Celsius) of the first dried liquid is higher than the second boiling point bp2 (71.5 degrees Celsius) of the second dried liquid.

[0133] In this case, during the second drying liquid supply process, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature lower than the first temperature. Figure 7 and Figure 8 The examples summarize that when the first boiling point bp1 is lower than the second boiling point bp2, the first temperature is lower than the second temperature; conversely, when the first boiling point bp1 is higher than the second boiling point bp2, the first temperature is higher than the second temperature. In other words, the sign of the value obtained by subtracting the second temperature from the first temperature is equal to the sign of the value obtained by subtracting the second boiling point bp2 from the first boiling point bp1 of the first dried liquid.

[0134] exist Figure 8 In the example, the temperature of the first medium is higher than the temperature of the second medium. Therefore, the first temperature can be higher than the second temperature. Figure 7 and Figure 8 The example summary shows that the sign of the value obtained by subtracting the second temperature from the first temperature is the same as the sign of the value obtained by subtracting the second temperature from the first medium temperature.

[0135] exist Figure 8 In the example, during the first drying liquid supply process, the temperature of the second main surface Wb of the substrate W is adjusted to a higher first temperature. Therefore, the temperature of the first drying liquid on the first main surface Wa of the substrate W can be closer to the first boiling point bp1. Consequently, during the first drying liquid supply process, the processing liquid and rinsing liquid on the first main surface Wa of the substrate W can be replaced with the first drying liquid with higher replacement efficiency.

[0136] On the other hand, in the second drying liquid supply process, the temperature of the second main surface Wb of the substrate W is adjusted to a second temperature that is lower than the first temperature. Therefore, in the second drying liquid supply process, boiling of the second drying liquid on the second main surface Wb can be further suppressed. Moreover, since the substrate W is heated, the displacement from the first drying liquid to the second drying liquid can be performed with higher displacement efficiency compared to the case where the substrate W is not heated.

[0137] exist Figure 8In the example, the first temperature is above the second boiling point (bp2) of the second dried liquid. Regarding this point, [the following will be implemented / determined]. Figure 7 and Figure 8 Summary of the above description, the higher of temperature 1 and temperature 2 ( Figure 7 The middle is the second temperature. Figure 8 (The first temperature) is the lower of the first boiling point bp1 and the second boiling point bp2. Figure 7 The middle is the first boiling point bp1, Figure 8 The middle is above the second boiling point (bp2). Figure 8 In this example, since the first temperature is above the second boiling point bp2, the first drying liquid on the first main surface Wa of the substrate W can be raised to a higher temperature during the first drying liquid supply process. Therefore, the processing liquid on the first main surface Wa of the substrate W can be replaced by the first drying liquid with a higher replacement efficiency.

[0138] In addition, Figure 8 In the example, the first temperature is lower than the first boiling point bp1 of the first drying liquid, and the second temperature is lower than the second boiling point bp2 of the second drying liquid. Therefore, the boiling of the first drying liquid in the first drying liquid supply process can be suppressed more reliably, and the boiling of the second drying liquid in the second drying liquid supply process can be suppressed more reliably. Therefore, the adhesion of particles can be suppressed more reliably.

[0139] Furthermore, the substrate heating unit 4 supplies a heat medium to the second main surface Wb of the substrate W, thereby heating the substrate W. Thus, the substrate heating unit 4 can be simply configured to heat the second main surface Wb of the substrate W. More specifically, the substrate heating unit 4 can be simply configured to heat the second main surface Wb of the substrate W to a first temperature corresponding to the first boiling point bp1 of the first drying liquid and a second temperature corresponding to the second boiling point bp2 of the second drying liquid.

[0140] Furthermore, in the first embodiment described above, the substrate heating unit 4 heats the second main surface Wb of the substrate W throughout the entire first drying liquid supply process. That is, the substrate heating unit 4 heats the second main surface Wb of the substrate W throughout the entire first drying liquid supply time. However, the substrate heating unit 4 can heat the second main surface Wb of the substrate W for at least a portion of the time of the first drying liquid supply process. As a result, the temperature of the first drying liquid on the first main surface Wa of the substrate W can also rise during this time, thereby improving the replacement efficiency during this time. Similarly, the substrate heating unit 4 can heat the second main surface Wb of the substrate W for at least a portion of the time of the second drying liquid supply process.

[0141] Furthermore, in the above example, although the ejector 3 ejects both the first and second drying liquids at room temperature, it can also eject the first and second drying liquids at high temperatures. For example, the ejector 3 may further include at least one of a first heater (not shown) and a second heater (not shown). The first heater is provided in the supply pipe 31ia and heats the first drying liquid flowing through the supply pipe 31ia. The second heater is provided in the supply pipe 31ib and heats the second drying liquid flowing through the supply pipe 31ib. The first and second heaters are controlled by the control unit 90. The first heater heats the first drying liquid at a temperature higher than room temperature but lower than its first boiling point bp1. For example, the first heater can raise the temperature of the first drying liquid to above 60 degrees Celsius, and in a specific example, to around 70 degrees Celsius. The second heater heats the second drying liquid at a temperature higher than room temperature but lower than its second boiling point bp2. For example, the second heater can raise the temperature of the second drying liquid to above 60 degrees Celsius, and in a specific example, it can raise it to around 70 degrees Celsius.

[0142] <Second Implementation>

[0143] The substrate processing apparatus 100 of the second embodiment is configured the same as that of the first embodiment. However, in the second embodiment, in the first drying liquid supply step (step S5), the substrate heating unit 4 can heat at least a portion (e.g., the central portion) of the second main surface Wb of the substrate W to a temperature above the first boiling point bp1 of the first drying liquid. Specifically, the substrate heating unit 4 can supply a heat medium with a temperature above the first boiling point bp1 of the first drying liquid to the central portion of the second main surface Wb of the substrate W. Alternatively, in the second drying liquid supply step (step S6), the substrate heating unit 4 can heat at least a portion (e.g., the central portion) of the second main surface Wb of the substrate W to a temperature above the second boiling point bp2 of the second drying liquid. Specifically, the substrate heating unit 4 can supply a heat medium with a temperature above the second boiling point bp2 of the second drying liquid to the central portion of the second main surface Wb of the substrate W. This will be described in detail below.

[0144] Figure 9 This is a schematic diagram illustrating the timing of the processing unit 1 in the second embodiment, the temperature of the thermal medium, and the temperature of the second main surface Wb and the first main surface Wa of the substrate W over time, representing a first example of such a diagram. Figure 9 In the example, the first boiling point bp1 of the first dried liquid is lower than the second boiling point bp2 of the second dried liquid.

[0145] exist Figure 9In the example, during the first drying liquid supply process (step S5), the temperature of the first medium of the hot medium ejected from the nozzle 40 is greater than the first boiling point bp1 of the first drying liquid. When the first drying liquid is isopropanol, the first boiling point bp1 is 82.4 degrees Celsius, and the temperature of the first medium of the hot medium is set to, for example, approximately 85 degrees Celsius. Therefore, the temperature of the portion of the hot medium that lands on the second main surface Wb of the substrate W (e.g., the central portion) is also greater than the boiling point of the first drying liquid.

[0146] On the other hand, in the first drying liquid supply process, a first drying liquid with a temperature lower than that of the hot medium is ejected from the nozzle 30ia. Therefore, the low-temperature first drying liquid is continuously supplied to the first main surface Wa of the substrate W. Thus, the low-temperature first drying liquid can cool the first main surface Wa of the substrate W. The higher the flow rate of the first drying liquid, the higher its cooling capacity. For this purpose, the flow rate regulating valve 33ia adjusts the flow rate of the first drying liquid to a value where the temperature of the first main surface Wa of the substrate W is less than the first boiling point bp1. For example, the flow rate of the first drying liquid is preset to be about 100 mL / min or more, and more specifically, it can be set to 250 mL / min or more.

[0147] exist Figure 9 In the example, the temperature of the first main surface Wa of the substrate W represents the temperature of the central portion of the first main surface Wa of the substrate W. Since the high-temperature heat medium settles in the central portion of the second main surface Wb of the substrate W, the temperature of the first main surface Wa of the substrate W has the temperature distribution described later. That is, the temperature is high in the central portion of the substrate W and decreases towards the radially outward direction. Therefore, in Figure 9 In the example, the highest value in the temperature distribution of the first main surface Wa of the substrate W is taken as the temperature of the first main surface Wa.

[0148] like Figure 9 As shown, the temperature of the first main surface Wa of the substrate W in the first drying liquid supply process is lower than the first boiling point bp1 of the first drying liquid. When the first drying liquid is isopropanol, the highest temperature in the temperature distribution of the first main surface Wa of the substrate W can be adjusted to, for example, around 80 degrees Celsius or lower. Therefore, boiling of the first drying liquid in the first drying liquid supply process can be suppressed more reliably. Consequently, the adhesion of particles to the first main surface Wa of the substrate W can be suppressed more reliably.

[0149] Furthermore, in the example described above, the temperature of the first medium of the hot medium ejected in the first drying liquid supply process is above the first boiling point bp1. Therefore, in the first drying liquid supply process, the maximum value of the temperature distribution on the first main surface Wa of the substrate W can be closer to the first boiling point bp1.

[0150] In the second embodiment, during the first drying liquid supply process, the temperature of the substrate W itself can be increased, and the temperature of the first drying liquid on the first main surface Wa of the substrate W can be brought closer to the first boiling point bp1. Therefore, the processing liquid on the first main surface Wa of the substrate W can be replaced by the first drying liquid with a higher replacement efficiency. Consequently, the residual amount of rinsing liquid can be further reduced, and the pattern breakage rate can be further reduced.

[0151] exist Figure 9 In the example, in the second drying liquid supply step (step S6), the temperature of the second medium of the hot medium ejected from the nozzle 40 is lower than the second boiling point bp2 of the second drying liquid. Here, the second drying liquid is methoxyperfluoroheptane, and the hot medium is water. That is, the second boiling point bp2 is 110.5 degrees Celsius, and the boiling point of the hot medium is 100 degrees Celsius. Therefore, the second boiling point bp2 is higher than the boiling point of the hot medium. Since the temperature of the hot medium must be set to be lower than the boiling point of the hot medium, the temperature of the second medium of the hot medium in the second drying liquid supply step is set to about 89.9 degrees Celsius, similar to, for example, in the first embodiment. Therefore, the second temperature is also lower than the boiling point of the hot medium, and even lower than the second boiling point bp2 of the second drying liquid.

[0152] In addition, Figure 9 In this example, the second temperature is also higher than the first temperature. Therefore, similar to the first embodiment, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be further increased in the second drying liquid supply process. As a result, the pattern breakage rate can be reduced in the same way as in the first embodiment.

[0153] Secondly, an explanation will be given regarding the case where the first boiling point bp1 is higher than the second boiling point bp2. Figure 10 This is a schematic diagram illustrating the timing of the processing unit 1 in the second embodiment, the temperature of the heat medium, the temperature of the second main surface Wb of the substrate W, and the temperature of the first main surface Wa of the substrate W over time, as a second example. Figure 10 In the example, the first boiling point bp1 of the first dried liquid is higher than the second boiling point bp2 of the second dried liquid. (And...) Figure 9 In comparison, the second drying liquid supply process (step S6) is different.

[0154] exist Figure 10 In the example, during the second drying liquid supply process (step S6), the substrate heating unit 4 heats at least a portion (here, the central portion) of the second main surface Wb of the substrate W to a level above the second boiling point bp2 of the second drying liquid. Furthermore, since the second boiling point bp2 is lower than the first boiling point bp1, therefore... Figure 10Similar to the first embodiment, in this example, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature lower than the first temperature. Specifically, the temperature of the second medium of the heat medium ejected from the nozzle 40 is lower than the temperature of the first medium and higher than the second boiling point bp2 of the second drying liquid. Here, the second drying liquid is fluoroheptane, and the second boiling point bp2 is 71.5 degrees Celsius. The temperature of the second medium of the heat medium can be set, for example, to about 75 degrees Celsius.

[0155] Furthermore, in the second drying liquid supply process, a second drying liquid with a lower temperature than the hot medium is ejected from the nozzle 30ib. The higher the flow rate of the second drying liquid, the higher its cooling capacity. For this purpose, the flow rate regulating valve 33ib adjusts the flow rate of the second drying liquid to a value where the temperature of the first main surface Wa of the substrate W is less than the second boiling point bp2. For example, the flow rate of the second drying liquid is preset to be about 100 mL / min or more, and more specifically, it can be set to 250 mL / min or more.

[0156] like Figure 10 As shown, the temperature of the first main surface Wa of the substrate W in the second drying liquid supply process is lower than the second boiling point bp2 of the second drying liquid. The highest temperature in the temperature distribution of the first main surface Wa of the substrate W can be adjusted to, for example, below about 70 degrees Celsius. Therefore, boiling of the second drying liquid in the second drying liquid supply process can be suppressed more reliably. Consequently, adhesion of particles to the first main surface Wa of the substrate W can be suppressed more reliably.

[0157] Furthermore, in the example described above, the temperature of the second medium, the hot medium ejected in the second drying liquid supply step, is above the second boiling point bp2. Therefore, in the second drying liquid supply step, the maximum value of the temperature distribution on the first main surface Wa of the substrate W can be closer to the second boiling point bp2. Consequently, the processing liquid on the first main surface Wa of the substrate W can be replaced from the first drying liquid to the second drying liquid with a higher replacement efficiency. Furthermore, in the drying step immediately after the supply of the second drying liquid stops, the temperature of the second drying liquid on the first main surface Wa of the substrate W can be further increased. Therefore, in the drying step, the surface tension of the second drying liquid can be further reduced, and the evaporation rate of the second drying liquid can be further increased. Therefore, the pattern breakage rate can be further reduced.

[0158] <Third Implementation>

[0159] In specific examples of the first and second embodiments, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature throughout the entire second drying liquid supply time of the second drying liquid supply process (step S6). However, it is not necessarily limited to this.

[0160] Figure 11This is a schematic diagram illustrating the timing of the processing unit 1 in the third embodiment, an example of the time-varying temperature of the thermal medium, and the temperature of the second main surface Wb of the substrate W. Figure 11 In the example, the second boiling point bp2 of the second dried liquid is higher than the first boiling point bp1 of the first dried liquid. Therefore, in Figure 11 In the example, the second temperature is higher than the first temperature.

[0161] Now, in Figure 11 In this example, the temperature of the heat medium remains at the first medium temperature after time point t2, and rises from the first medium temperature to the second medium temperature at time point t23, which is after time point t2. That is, at time point t23, the control unit 90 causes the heater 44 to raise the temperature of the heat medium. Specifically, at time point t23, the heater 44 increases the heat supplied to the heat medium, causing the temperature of the heat medium to rise from the first medium temperature to the second medium temperature. Then, at time point t3, which is after time point t23, the control unit 90 switches the supply valve 42 from the open state to the closed state.

[0162] Therefore, the substrate heating section 4 heats the second main surface Wb of the substrate W to a second temperature during a predetermined post-time T2 from time t23 to time t3 within the second drying liquid supply time T from time t2 to time t3. On the other hand, in Figure 11 In the example, during the time T1 preceding time t2 to time t23, the temperature of the second main surface Wb of the substrate W is lower than the second temperature; more specifically, it can be maintained at the first temperature. The subsequent time T2 is preset to be the time during which the temperature of the first main surface Wa of the substrate W at time t3 is sufficiently close to the second boiling point bp2 of the second drying liquid. For example, the subsequent time T2 can be set to less than half of the second drying liquid supply time T, less than one-third of the second drying liquid supply time T, less than one-quarter of the second drying liquid supply time T, or less than one-tenth of the second drying liquid supply time T.

[0163] As described above, in the third embodiment, the substrate heating unit 4 heats the second main surface Wb of the substrate W to a second temperature in the later time T2, and sets the temperature of the second main surface Wb of the substrate W to a temperature lower than the second temperature in the earlier time T1. Therefore, the power consumption of the substrate heating unit 4 can be reduced, and the power consumption of the substrate processing apparatus 100 can be reduced. Furthermore, since the temperature of the second drying liquid on the first main surface Wa of the substrate W is sufficiently high at time t3, the second drying liquid can evaporate with lower surface tension and a shorter evaporation time during the drying process. Therefore, the pattern breakage rate can be reduced.

[0164] In addition, Figure 11In the example, although the substrate heating section 4 supplies a high-temperature heat medium to the second main surface Wb of the substrate W in the initial time T1, the second main surface Wb of the substrate W can also be left unheated by the substrate heating section 4 in the initial time T1. In this case, since the substrate heating section 4 does not supply a heat medium, the amount of heat medium used can be reduced. When the heat medium is liquid, liquefaction can be reduced. In addition, in the subsequent time T2 after the replacement from the first drying liquid to the second drying liquid has progressed to a certain extent, the replacement efficiency can be improved. Therefore, compared to the case where the second main surface Wb of the substrate W is heated to a second temperature in the initial time T1, it is easier to reduce the residual amount of the first drying liquid.

[0165] <Fourth Implementation>

[0166] In the example above, processing unit 1 sequentially performs the liquid treatment process (step S3), the rinsing process (step S4), the first drying liquid supply process (step S5), the second drying liquid supply process (step S6), and the drying process (step S7). However, it is not necessarily limited to this.

[0167] Figure 12 This is a flowchart illustrating the first example of the operation of the processing unit 1 in the fourth embodiment. Figure 12 In this example, the control unit 90 causes the processing unit 1 to perform steps S11 to S20 according to a preset processing sequence (procedure). Steps S11 to S15 are the same as steps S1 to S5. However, in step S15 (first drying liquid supply process), the substrate heating unit 4 may not heat the substrate W.

[0168] Next, processing unit 1 hydrophobizes the first main surface Wa of substrate W (step S16: hydrophobication process: equivalent to liquid supply process). Specifically, processing unit 1 includes a nozzle for ejecting hydrophobic liquid, from which the hydrophobic liquid is ejected toward the first main surface Wa of the rotating substrate W. The hydrophobic liquid includes, for example, a silicon-based hydrophobic liquid. The silicon-based hydrophobic liquid is a hydrophobic liquid that hydrophobizes silicon (Si) itself and compounds containing silicon. The hydrophobic liquid is, for example, a silyl alkylating agent containing liquid silane coupling agent (also known as a silane coupling agent). When the first main surface Wa of substrate W has been sufficiently hydrophobized, processing unit 1 stops ejecting the hydrophobic liquid from the nozzle.

[0169] Next, processing unit 1 executes steps S17 to S20. Steps S17 to S20 are the same as steps S5 to S8.

[0170] As described above, in the first example, the first drying liquid supply step (step S17) and the second drying liquid supply step (step S18) are performed in the same manner as in the first to third embodiments. Therefore, the pattern breakage rate of the substrate W can be reduced. Furthermore, since the first main surface Wa of the substrate W is hydrophobic, the contact angle of the first main surface Wa can be reduced. Therefore, the surface tension acting on the pattern can be reduced, further reducing the pattern breakage rate.

[0171] Figure 13 This is a flowchart illustrating a second example of the operation of the processing unit 1 in the fourth embodiment. Figure 13 In the example, the control unit 90, according to a preset processing sequence (procedure), causes the processing unit 1 to perform steps S21 to S27. Steps S21 to S27 are the same as steps S1 to S3 and steps S5 to S8, respectively. However, at the end of step S23 (liquid process: equivalent to liquid supply process), the metal is exposed on the first main surface Wa of the substrate W. According to the second example, step S24 (first drying liquid supply process) is performed after step S23. Therefore, water is not supplied to the first main surface Wa of the substrate W. Thus, the reaction between the metal and water can be avoided, and the adverse conditions caused by such reaction can be avoided. In addition, in the second example described above, the first drying liquid supply process (step S5) and the second drying liquid supply process (step S6) are performed in the same way as in the first to third embodiments. Thus, the pattern breakage rate of the substrate W can be reduced.

[0172] <Fifth Implementation>

[0173] Figure 14 This diagram schematically illustrates an example of the configuration of the processing unit 1 according to the fifth embodiment. The processing unit 1 of the fifth embodiment differs from the processing unit 1 of the first embodiment in the configuration of the ejection section 3 and the opposing member 60. Figure 14 In this example, the opposing member 60 includes a blocking plate 6 and a hollow shaft 61. The blocking plate 6 is positioned vertically opposite to the first main surface Wa of the substrate W held by the substrate holding part 2. Figure 14 In this example, since the first main surface Wa of the substrate W corresponds to the upper surface, the blocking plate 6 is disposed vertically above the substrate W. The blocking plate 6 has, for example, a plate-like shape, and its thickness direction is arranged in a vertical orientation. The lower surface of the blocking plate 6 is a facing surface opposite to the first main surface Wa of the substrate W. The blocking plate 6 has, for example, a circular shape when viewed from above. The diameter of the blocking plate 6 (i.e., the diameter of the facing surface) can be, for example, 80% or more, 90% or more, or even more than the diameter of the substrate W.

[0174] exist Figure 14 In this example, a hollow shaft 61 is provided on the upper surface of the baffle plate 6. The hollow shaft 61 has a hollow portion, and a through hole is formed in the center of the baffle plate 6, extending vertically through itself. This hollow portion is connected to the through hole of the baffle plate 6 in the vertical direction. A nozzle 30i is provided in the hollow portion of the hollow shaft 61 and the through hole of the baffle plate 6. The diameter of the outer peripheral surface of the nozzle 30i is smaller than the diameter of the inner peripheral surface of the hollow shaft 61 and the baffle plate 6. The space between the outer peripheral surface of the nozzle 30i and the inner peripheral surface of the hollow shaft 61 and the baffle plate 6 functions as a gas flow path 30g.

[0175] exist Figure 14 In this example, nozzle 30i is connected to the downstream end of supply pipe 31i, and the upstream end of supply pipe 31i is connected to the downstream ends of supply pipe 31ia and supply pipe 31ib. In this configuration, when supply valve 32ia is open, the first drying liquid is ejected from nozzle 30i. Additionally, when supply valve 32ib is open, the second drying liquid is ejected from nozzle 30i. That is, nozzle 30i is shared by both the first and second drying liquids.

[0176] exist Figure 14 In this example, nozzles 30c and 30w are disposed outside the opposing member 60. Additionally, in Figure 14 In this example, the motion drive unit 35 includes a motion drive unit 35c and a motion drive unit 35w. The motion drive unit 35c moves the nozzle 30c between a processing position and a standby position, and the motion drive unit 35w moves the nozzle 30w between a processing position and a standby position.

[0177] exist Figure 14 In this example, a motion drive unit 35i is provided as the motion drive unit 35. The motion drive unit 35i moves the nozzle 30i and the opposing member 60 together. The motion drive unit 35i moves the nozzle 30i and the opposing member 60 together along, for example, a vertical direction. In this case, the motion drive unit 35i can also be considered a lifting drive unit. The motion drive unit 35i includes: a drive source such as a motor, and a power transmission unit that transmits power from the drive source to the nozzle 30i and the blocking plate 6. The power transmission unit includes, for example, a cam mechanism or a ball screw mechanism.

[0178] The operation of the processing unit 1 in the fifth embodiment is also the same as Figure 4 The flowchart is the same. However, in the first drying liquid supply process, the second drying liquid supply process and the drying process, the moving drive unit 35i lowers the nozzle 30i and the opposing member 60 to a processing position closer to the substrate W, and otherwise raises to a standby position higher than the processing position.

[0179] In the fifth embodiment, the first drying liquid supply step (step S5) and the second drying liquid supply step (step S6) of each of the first to third embodiments are also performed. Therefore, the pattern breakage rate can be reduced.

[0180] As described above, the substrate processing apparatus 100 and the substrate processing method have been explained in detail. However, the above description is illustrative in all embodiments, and this disclosure is not limited thereto. Furthermore, the various variations described above can be combined and applied as long as they do not contradict each other. Moreover, the numerous variations not illustrated should be understood as conceivable without departing from the scope of this disclosure.

[0181] In the examples of embodiments 1 to 4, although each fluid has a dedicated nozzle, similar to nozzle 30i in embodiment 5, a single nozzle can be shared by fluids of different types. On the other hand, in embodiment 5, dedicated nozzles can be provided for both the first and second drying liquids. Alternatively, a single nozzle can be shared by fluids of different types.

[0182] Furthermore, in the example described above, although the substrate heating section 4 supplies a heat medium to the second main surface Wb of the substrate W, it is not necessarily limited to this. The substrate heating section 4 may, for example, include a heater disposed at a position facing the second main surface Wb of the substrate W in the vertical direction. The heater may, for example, be a resistance heater including heating wires, or an optical heater that outputs light for heating.

[0183] [Explanation of the labels in the attached diagram]

[0184] bp1: First boiling point

[0185] bp2: Second boiling point

[0186] S1, S11, S21: Holding process (step)

[0187] S4, S16, S23: Liquid supply process (steps)

[0188] S5, S17, S24: First drying liquid supply process (step)

[0189] S6, S18, S25: Second drying liquid supply process (step)

[0190] S7, S19, S26: Drying process (steps)

[0191] T: Desiccant supply time (second desiccant supply time)

[0192] T1: Previous Time

[0193] T2: Later Time

[0194] W: substrate

[0195] Wa: 1st main surface

[0196] Wb: Second Main Face

Claims

1. A substrate processing method, wherein, The substrate processing method comprises: a holding step of holding a substrate having a first main surface on which a pattern is formed and a second main surface opposite to the first main surface; a liquid supplying step of supplying a processing liquid to the first main surface of the substrate; a first dry liquid supplying step of supplying, after the liquid supplying step, a first dry liquid having a first boiling point and a surface tension lower than that of the processing liquid to the first main surface of the substrate; a second dry liquid supplying step of supplying, after the first dry liquid supplying step, a second dry liquid having a second boiling point different from the first boiling point and a surface tension lower than that of the first dry liquid to the first main surface of the substrate; and a drying step of drying the substrate after the second dry liquid supplying step. In at least a part of the time in the first dry liquid supplying step, the second main surface of the substrate is heated to a first temperature. In at least a part of the time in the second dry liquid supplying step, at least a part of the second main surface of the substrate is heated to a second temperature different from the first temperature. The sign of the value obtained by subtracting the second temperature from the first temperature is the same as the sign of the value obtained by subtracting the second boiling point from the first boiling point.

2. The substrate processing method according to claim 1, wherein in the first dry liquid supplying step, a hot medium at a first medium temperature is supplied to the second main surface of the substrate; in the second dry liquid supplying step, the hot medium at a second medium temperature is supplied to the second main surface of the substrate; the sign of the value obtained by subtracting the second medium temperature from the first medium temperature is the same as the sign of the value obtained by subtracting the second boiling point from the first boiling point.

3. The substrate processing method according to claim 1 or 2, wherein the temperature of the higher one of the first temperature and the second temperature is higher than the temperature of the lower one of the first boiling point and the second boiling point.

4. The substrate processing method according to claim 1 or 2, wherein the miscibility of the processing liquid and the first dry liquid is higher than the miscibility of the processing liquid and the second dry liquid.

5. The substrate processing method according to claim 1 or 2, wherein in the first dry liquid supplying step, at least a part of the second main surface of the substrate is heated to the first boiling point of the first dry liquid or higher, and the first dry liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate is lower than the first boiling point of the first dry liquid.

6. The substrate processing method according to claim 1 or 2, wherein in the second dry liquid supplying step, at least a part of the second main surface of the substrate is heated to the second boiling point of the second dry liquid or higher, and the second dry liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate is lower than the second boiling point of the second dry liquid.

7. The substrate processing method according to claim 1 or 2, wherein the second temperature is higher than the first temperature. ​ In the second drying liquid supplying process, the temperature of the second main surface of the substrate is lower than the second temperature in an early period of a second drying liquid supplying time in which the second drying liquid is supplied, and the second main surface of the substrate is heated to the second temperature in a later period of the second drying liquid supplying time.

Images