Electronic device

Abstract

The invention relates to an electronic device. An electronic device may include: a sensor layer defined with a sensing region and a peripheral region adjacent to the sensing region; and a sensor driving portion electrically connected to the sensor layer, in which the sensor layer may include: a plurality of first electrodes; a plurality of second electrodes; a plurality of first traces electrically connected to the plurality of first electrodes; and a plurality of second traces electrically connected to the plurality of second electrodes and a portion of which is disposed in the peripheral area, where each of the plurality of second electrodes may include a first divided electrode and a second divided electrode, where the sensor driving portion may include: a first circuit electrically connected to the first trace and a second circuit electrically connected to the second trace and a portion of which is disposed in the peripheral area; a first intermediate coordinate signal is generated by receiving a first signal from a first divided electrode of the plurality of second electrodes, a second intermediate coordinate signal is generated by receiving a second signal from a second divided electrode of the plurality of second electrodes, and a coordinate signal is generated on the basis of the first intermediate coordinate signal and the second intermediate coordinate signal.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to an electronic device having improved sensing performance at the time of touch input. BACKGROUND

[0002] Multimedia electronic devices such as televisions, mobile phones, tablet computers, navigators, game consoles, vehicle displays, etc. are used to display images, and in addition to conventional input methods such as buttons, keyboards, mice, etc., can provide a touch-based input method so that a user can easily intuitively and conveniently input information or instructions. SUMMARY TECHNICAL PROBLEM

[0003] An object of the present invention is to provide an electronic device having improved sensing performance at the time of touch input. TECHNICAL SOLUTION

[0004] An electronic device according to an embodiment of the present invention can include a sensor layer defining a sensing area and a peripheral area adjacent to the sensing area, and a sensor driving part electrically connected to the sensor layer, wherein the sensor layer can include a plurality of first electrodes arranged in a first direction, a plurality of second electrodes arranged in a second direction crossing the first direction, a plurality of first traces electrically connected to the plurality of first electrodes, and a plurality of second traces electrically connected to the plurality of second electrodes, and a portion of the plurality of second traces is disposed in the peripheral area, wherein each of the plurality of second electrodes includes a first divided electrode extending in the first direction, and a second divided electrode spaced apart from the first divided electrode in the second direction and extending in the first direction, wherein the sensor driving part can include a first circuit configured to generate a first intermediate coordinate signal by receiving a first signal from the first divided electrode of the plurality of second electrodes, and generate a second intermediate coordinate signal by receiving a second signal from the second divided electrode of the plurality of second electrodes, and generate a coordinate signal based on the first intermediate coordinate signal and the second intermediate coordinate signal.

[0005] In an embodiment of the present invention, the first circuit can include a switching circuit for selectively receiving the first signal or the second signal.

[0006] In an embodiment of the present invention, the first circuit can further include a first coordinate signal generation part generating the first intermediate coordinate signal by receiving the first signal through the switching circuit in a first interval, and generating the second intermediate coordinate signal by receiving the second signal in a second interval consecutive in time to the first interval.

[0007] In one embodiment of the present application, the first circuit can further include a second coordinate signal generation section that generates the coordinate signal by performing barycentric operation on the first intermediate coordinate signal and the second intermediate coordinate signal.

[0008] In one embodiment of the present application, the sensor driving section can further include a second circuit including an amplifier that generates a differential amplification signal by performing differential operation on the second signal received from the second divided electrode of one of the plurality of second electrodes and the first signal received from the first divided electrode of another of the plurality of second electrodes.

[0009] In one embodiment of the present application, the plurality of second traces can extend in the second direction in a region overlapping the sensing region.

[0010] In one embodiment of the present application, in the region overlapping the sensing region, lengths of each of the plurality of second traces can be identical to each other.

[0011] In one embodiment of the present application, the sensing region can include a plurality of sensing units arranged in the first direction and the second direction, wherein each of the plurality of sensing units overlaps one of the plurality of first electrodes and one of the plurality of second electrodes.

[0012] In one embodiment of the present application, a first width that is a maximum width of the first divided electrode in the second direction is smaller than a second width that is a maximum width of one of the plurality of first electrodes in the first direction.

[0013] In one embodiment of the present application, the first divided electrode can include a plurality of sensing patterns spaced apart in the first direction, and a plurality of bridge patterns disposed on a different layer from the plurality of sensing patterns and electrically connected to the plurality of sensing patterns, wherein the plurality of second traces are disposed on the same layer as the plurality of bridge patterns.

[0014] In one embodiment of the present application, the plurality of second traces can include a first divided trace connected to the first divided electrode of one of the plurality of second electrodes, and a second divided trace connected to the second divided electrode of the one of the plurality of second electrodes, wherein the first divided trace and the second divided trace can be disposed between two most adjacent bridge patterns of the plurality of bridge patterns.

[0015] In an embodiment of the present application, the plurality of second traces can include a third split trace connected to the first split electrode of another one of the plurality of second electrodes, and a fourth split trace connected to the second split electrode of the another one of the plurality of second electrodes, wherein a first distance between the first split trace and the second split trace can be smaller than a second distance between the second split trace and the third split trace in a region overlapping the sensing region.

[0016] An electronic device according to an embodiment of the present application can include a sensor layer defining a sensing region and a peripheral region adjacent to the sensing region, and a sensor driving part electrically connected to the sensor layer, wherein the sensor layer can include a plurality of first electrodes arranged in a first direction, a plurality of second electrodes arranged in a second direction crossing the first direction, a plurality of first traces electrically connected to the plurality of first electrodes, and a plurality of second traces electrically connected to the plurality of second electrodes, and a part of the plurality of second traces is disposed in the peripheral region, wherein one of the plurality of second electrodes can include a first split electrode and a second split electrode spaced apart in the second direction, another one of the plurality of second electrodes can include a third split electrode and a fourth split electrode spaced apart in the second direction, wherein the first split electrode, the second split electrode, the third split electrode, and the fourth split electrode can be sequentially arranged in the second direction, and the sensor driving part can be configured to perform a differential operation on a signal received from the second split electrode and a signal received from the third split electrode.

[0017] In an embodiment of the present application, the sensor driving part can include an amplifier configured to generate a differential amplified signal by performing a differential operation on the signal received from the second split electrode and the signal received from the third split electrode.

[0018] In an embodiment of the present application, the sensor driving part can include a first coordinate signal generating part configured to generate a first intermediate coordinate signal based on a signal received from the first split electrode, and to generate a second intermediate coordinate signal based on the signal received from the second split electrode.

[0019] In an embodiment of the present application, the sensor driving part can further include a second coordinate signal generating part configured to generate a coordinate signal by performing a barycentric operation on the first intermediate coordinate signal and the second intermediate coordinate signal.

[0020] In an embodiment of the present application, the sensor driving part can further include a switching circuit for selectively receiving a signal from the first split electrode or the second split electrode.

[0021] In an embodiment of the present application, a first width, which is a maximum width of the first split electrode in the second direction, can be smaller than a second width, which is a maximum width of one of the first electrodes in the first direction.

[0022] In an embodiment of the present application, the plurality of second traces can include a first split trace connected to the first split electrode, a second split trace connected to the second split electrode, a third split trace connected to the third split electrode, and a fourth split trace connected to the fourth split trace, wherein a first distance between the first split trace and the second split trace in a region overlapping the sensing area can be smaller than a second distance between the second split trace and the third split trace.

[0023] In an embodiment of the present application, lengths of each of the plurality of second traces in a region overlapping the sensing area can be the same as each other. Advantageous Effects

[0024] As described above, the electronic device can include a sensor layer and a sensor driving part electrically connected to the sensor layer. The sensor driving part can correct coordinates using a signal provided through two split traces electrically connected to two split electrodes overlapping one sensing unit. Accordingly, it is possible to improve accuracy, thereby reducing the possibility of misoperation when touching.

[0025] Also, the sensor driving part can generate a differential amplification signal through a differential operation by using a signal provided through one split trace as a differential signal of a signal provided through another split trace of a next channel. Accordingly, it is possible to remove noise included in a signal through a differential operation. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 FIG. 1 is a plan view of an electronic device according to an embodiment of the present application.

[0027] Figure 2 FIG. 2 is a block diagram briefly illustrating a use example of an electronic device according to an embodiment of the present application.

[0028] Figure 3 FIG. 3 is a cross-sectional view of an electronic device according to an embodiment of the present application.

[0029] Figure 4 FIG. 4 is a plan view of a display layer according to an embodiment of the present application.

[0030] Figure 5 FIG. 5 is a plan view of a sensor layer according to an embodiment of the present application.

[0031] Figure 6 This is an enlarged version of an embodiment of the present invention. Figure 5 The diagram of region AA'.

[0032] Figure 7 This is a plan view of a sensing unit according to an embodiment of the present invention.

[0033] Figure 8 This is an enlarged version of an embodiment of the present invention. Figure 5 The diagram of region AA'.

[0034] Figure 9 This is a diagram showing the waveforms of the first signal and the second signal according to an embodiment of the present invention.

[0035] Figure 10 This is a diagram illustrating the driving of a first circuit according to an embodiment of the present invention.

[0036] Figure 11 This is a graph showing the waveforms of the second and third signals according to an embodiment of the present invention.

[0037] Figure 12 This is a diagram illustrating the driving of a second circuit according to an embodiment of the present invention.

[0038] Figure 13 This is a diagram illustrating the driving of a first circuit and a second circuit according to an embodiment of the present invention.

[0039] Explanation of reference numerals in the attached figures Detailed Implementation

[0040] In this specification, when it is mentioned that a certain component (or region, layer, part, etc.) is "above", "connected" or "combined" with another component, it means that it can be directly arranged on or directly connected / combined with another component, or a third component can be arranged between them.

[0041] The same reference numerals refer to the same constituent elements. Furthermore, in the drawings, the thickness, proportions, and dimensions of the constituent elements are exaggerated for the purpose of effective illustration of the technical content. "And / or" includes all but one combination of the relevant constituent elements that can be defined.

[0042] The terms "first", "second", and the like can be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another component. For example, a first component could be termed a second component, and, similarly, a second component could be termed a first component without departing from the scope of the present application. The singular expression should include the plural expression unless it is clearly defined in the context.

[0043] Also, the terms "below", "under", "above", "on", and the like are used to describe the relative relationship between the components shown in the drawings. The terms are relative concepts described based on the direction shown in the drawings.

[0044] The terms "include" or "have" should be understood to be intended to designate the presence of a characteristic, number, step, operation, component, part, or a combination thereof described in the specification, and not to preclude the presence or addition of one or more other characteristics, numbers, steps, operations, components, parts, or a combination thereof.

[0045] The terms "part", "unit" refer to a software component or a hardware component that performs a specific function. For example, the hardware component can include a field-programmable gate array (FPGA) or an application specific integrated circuit (ASIC). The software component can refer to an executable code and / or data used by the executable code in an addressable storage medium. Thus, for example, the software component can be an object-oriented software component, a class component, and a task component, and can include a process, a function, an attribute, a program, a subprogram, a program code segment, a driver, firmware, a microcode, a circuit, data, a database, a data structure, a table, an array, or a variable.

[0046] Unless otherwise defined, all terms used in the present specification, including technical terms and scientific terms, have the same meaning as those generally understood by one of ordinary skill in the art to which the present application pertains. Also, the terms defined in a generally used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the relevant technology, and should not be interpreted as an excessively ideal or over-formalized meaning unless explicitly defined in the present specification.

[0047] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings.

[0048] Figure 1is a plan view of an electronic device 1000 according to an embodiment of the present application.

[0049] Referring to Figure 1 , the electronic device 1000 can be a device activated according to an electric signal. The electronic device 1000 can be applied to electronic devices such as a mobile phone, a tablet computer, a smart watch, a notebook computer, a computer, and a smart TV. In Figure 1 , a mobile phone is exemplified.

[0050] The electronic device 1000 can display an image IM on a display surface IS parallel to each of a first direction DR1 and a second direction DR2. The display surface IS on which the image IM is displayed can correspond to a front surface of the electronic device 1000. The image IM can include not only a dynamic image but also a static image. A normal direction of the display surface IS (i.e., a thickness direction of the electronic device 1000) is indicated by a third direction DR3. Front surfaces (or upper surfaces) and back surfaces (or lower surfaces) of various layers or units described below are distinguished by the third direction DR3.

[0051] The display surface IS of the electronic device 1000 can be divided into a display area DA and a peripheral area NDA. The display area DA can be an area in which the image IM is displayed. A user recognizes the image IM through the display area DA. In the present embodiment, the display area DA is shown in a quadrangular shape with rounded corners. However, this is exemplarily shown, and the display area DA can have various shapes and is not limited to a certain embodiment.

[0052] The peripheral area NDA is adjacent to the display area DA. The peripheral area NDA can have a predetermined color. The peripheral area NDA can be referred to as a non-display area or a bezel area. The peripheral area NDA can surround the display area DA. Accordingly, the shape of the display area DA can be substantially defined by the peripheral area NDA. However, this is exemplarily shown, and the peripheral area NDA can be arranged adjacent to only one side of the display area DA, or can be omitted. The electronic device 1000 according to an embodiment of the present application can include various embodiments and is not limited to a certain embodiment.

[0053] Figure 2 is a block diagram briefly showing a use example of the electronic device 1000 according to an embodiment of the present application.

[0054] Referring to Figure 2 , the electronic device 1000 can include a display layer 100, a sensor layer 200, a display driving part 100C, a sensor driving part 200C, a main driving part 1000C, and a power supply circuit 1000P.

[0055] The display layer 100 can be a configuration that substantially generates an image. The display layer 100 can be a light emitting type display layer, for example, the display layer 100 can be an organic light emitting display layer, an inorganic light emitting display layer, an organic-inorganic light emitting display layer, a quantum dot display layer, a micro LED display layer, or a nano LED display layer.

[0056] The sensor layer 200 can be disposed on the display layer 100. The sensor layer 200 can sense an external input applied from the outside. The sensor layer 200 can be an integral type sensor that is continuously formed in a manufacturing process of the display layer 100, or the sensor layer 200 can be an external sensor attached to the display layer 100.

[0057] The main driving part 1000C can control the overall operation of the electronic device 1000. For example, the main driving part 1000C can control the operation of the display driving part 100C and the sensor driving part 200C. The main driving part 1000C can include at least one microprocessor, and the main driving part 1000C can also be referred to as a host. The main driving part 1000C can further include a graphic controller.

[0058] The display driving part 100C can drive the display layer 100. The display driving part 100C can receive image data and a control signal from the main driving part 1000C. The control signal can include various signals. For example, the control signal can include an input vertical synchronization signal, an input horizontal synchronization signal, a main clock, and a data enable signal, etc.

[0059] The sensor driving part 200C can be electrically connected with and drive the sensor layer 200. The sensor driving part 200C can receive a control signal from the main driving part 1000C. The control signal can include a clock signal of the sensor driving part 200C.

[0060] The power supply circuit 1000P can include a power management integrated circuit (PMIC). The power supply circuit 1000P can generate a plurality of driving voltages for driving the display layer 100, the sensor layer 200, the display driving part 100C, and the sensor driving part 200C. For example, the plurality of driving voltages can include a gate high voltage, a gate low voltage, an ELVSS voltage, an ELVDD voltage, an initialization voltage, etc., but is not particularly limited to the above examples.

[0061] The electronic device 1000 can sense an input applied from the outside. For example, the electronic device 1000 can sense a passive input caused by a touch 2000. The touch 2000 can include all input units capable of providing a change in capacitance such as a user's body, an input device (for example, a pen).

[0062] Figure 3 is a cross-sectional view of an electronic device 1000 according to an embodiment of the present application. For example, Figure 3 may be a cross-sectional view taken along Figure 1 line I-I' of FIG. 1.

[0063] Referring to Figure 3 , the electronic device 1000 can include a display layer 100, a sensor layer 200, and an anti-reflection layer 300. The display layer 100 can include a base layer 110, a barrier layer 120, a buffer layer BFL, a circuit layer 130, an element layer 140, and an encapsulation layer 150.

[0064] The base layer 110 can have a single layer or a multi-layer structure. For example, the base layer 110 can include a first sub-base layer 111, a second sub-base layer 112, and a third sub-base layer 113. Each of the first sub-base layer 111 and the third sub-base layer 113 can include at least one of a polyimide-based resin, an acrylate-based resin, a methacrylate-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyamide-based resin, and a perylene-based resin. Also, in the present specification, the "~~" based resin refers to a resin including a functional group of "~~". For example, each of the first sub-base layer 111 and the third sub-base layer 113 can include polyimide.

[0065] The second sub-base layer 112 can have a single layer or a multi-layer structure. For example, the second sub-base layer 112 can include an inorganic substance, and can include at least one of silicon oxide, silicon nitride, silicon oxynitride, and amorphous silicon. For example, the second sub-base layer 112 can include silicon oxynitride and silicon oxide stacked thereon.

[0066] The barrier layer 120 can be disposed on the base layer 110. The barrier layer 120 can have a single layer or a multi-layer structure. The barrier layer 120 can include at least one of silicon oxide, silicon nitride, silicon oxynitride, and amorphous silicon.

[0067] The barrier layer 120 can further include a first lower light-blocking layer BML1. For example, in the case where the barrier layer 120 has a multi-layer structure, the first lower light-blocking layer BML1 can be disposed between layers constituting the barrier layer 120. However, it is not limited thereto, and the first lower light-blocking layer BML1 can be disposed between the base layer 110 and the barrier layer 120, or can also be disposed on the barrier layer 120. In an embodiment, the first lower light-blocking layer BML1 can also be omitted. The first lower light-blocking layer BML1 can be referred to as a first lower layer, a first lower metal layer, a first lower electrode layer, a first lower shield layer, a first light-blocking layer, a first metal layer, a first shield layer, or a first overlapping layer.

[0068] The buffer layer BFL can be disposed on the barrier layer 120. The buffer layer BFL can prevent a phenomenon in which metal atoms or impurities are diffused from the base layer 110 to the first semiconductor patterns DE1, AC1, SE1. Also, the buffer layer BFL can uniformly form the first semiconductor patterns DE1, AC1, SE1 by adjusting a rate of heat supply during a crystallization process for forming the first semiconductor patterns DE1, AC1, SE1.

[0069] The buffer layer BFL can include a plurality of inorganic layers. For example, the buffer layer BFL can include a first sub-buffer layer including silicon nitride, and a second sub-buffer layer disposed on the first sub-buffer layer and including silicon oxide.

[0070] The circuit layer 130 can be disposed on the buffer layer BFL, and the element layer 140 can be disposed on the circuit layer 130. The pixel PX can also include a pixel circuit PDC and a light emitting element ED electrically connected with the pixel circuit PDC. The pixel circuit PDC can be included in the circuit layer 130, and the light emitting element ED can be included in the element layer 140.

[0071] Figure 3 A silicon thin film transistor S-TFT and an oxide thin film transistor O-TFT of the pixel circuit PDC are exemplarily illustrated. However, the transistors constituting the pixel circuit PDC can all be silicon thin film transistors S-TFTs, or all be oxide thin film transistors O-TFTs.

[0072] The first semiconductor patterns DE1, AC1, SE1 can be disposed on the buffer layer BFL. The first semiconductor patterns DE1, AC1, SE1 can include a silicon semiconductor. For example, the silicon semiconductor can include amorphous silicon, polycrystalline silicon, or the like. For example, the first semiconductor patterns DE1, AC1, SE1 can include low-temperature polycrystalline silicon.

[0073] Figure 3Only a part of the first semiconductor pattern DE1, AC1, SE1 disposed on the buffer layer BFL is shown, and the first semiconductor pattern DE1, AC1, SE1 can also be disposed in other regions. The first semiconductor pattern DE1, AC1, SE1 can be arranged in a certain rule throughout the pixel. The first semiconductor pattern DE1, AC1, SE1 can have different electrical properties according to whether or not doped. The first semiconductor pattern DE1, AC1, SE1 can include a first region (first drain region DE1, first source region SE1) having high conductivity and a second region (first active region AC1) having low conductivity. The first region (first drain region DE1, first source region SE1) can be doped with an N-type dopant or a P-type dopant. The P-type transistor can include a doped region doped with a P-type dopant, and the N-type transistor can include a doped region doped with an N-type dopant. The second region (first active region AC1) can be a non-doped region, or can be a region doped at a lower concentration than the concentration of the first region (first drain region DE1, first source region SE1).

[0074] The conductivity of the first region (first drain region DE1, first source region SE1) can be greater than the conductivity of the second region (first active region AC1), and the first region (first drain region DE1, first source region SE1) can substantially function as an electrode or a signal line. The second region (first active region AC1) can substantially correspond to an active region (or, a channel) of a transistor. In other words, a part of the first semiconductor pattern DE1, AC1, SE1 is an active region of a transistor, another part can be a source region or a drain region of a transistor, and still another part can be a connection electrode or a connection signal line.

[0075] The first source region SE1, the first active region AC1, and the first drain region DE1 of the silicon thin film transistor S-TFT can be formed from the first semiconductor pattern DE1, AC1, SE1. The first source region SE1 and the first drain region DE1 can extend in opposite directions from the first active region AC1 in a cross-section.

[0076] Figure 3 A part of the connection signal line CSL formed from the first semiconductor pattern DE1, AC1, SE1 is shown.

[0077] The circuit layer 130 can include a plurality of inorganic layers and a plurality of organic layers. In an embodiment, the first to fifth insulating layers 10, 20, 30, 40, 50 stacked in order on the buffer layer BFL can be inorganic layers, and the sixth to eighth insulating layers 60, 70, 80 can be organic layers.

[0078] The first insulating layer 10 can be disposed on the buffer layer BFL. The first insulating layer 10 can cover the first semiconductor patterns DE1, AC1, SE1. The first insulating layer 10 can be an inorganic layer and / or an organic layer, and can have a single layer or a multi-layer structure. The first insulating layer 10 can include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. In the present embodiment, the first insulating layer 10 can be a single-layer silicon oxide layer. Not only the first insulating layer 10, but also the insulating layer of the circuit layer 130 to be described later can have a single layer or a multi-layer structure.

[0079] The first gate electrode GT1 of the silicon thin film transistor S-TFT is disposed on the first insulating layer 10. The first gate electrode GT1 can be a part of a metal pattern. The first gate electrode GT1 overlaps the first active area AC1. The first gate electrode GT1 can be used as a mask in a process of doping the first semiconductor patterns DE1, AC1, SE1. The first gate electrode GT1 can include titanium, silver, a silver-containing alloy, molybdenum, a molybdenum-containing alloy, aluminum, an aluminum-containing alloy, aluminum nitride, tungsten, tungsten nitride, copper, indium tin oxide, or indium zinc oxide, but is not particularly limited thereto.

[0080] The second insulating layer 20 can be disposed on the first insulating layer 10, and can cover the first gate electrode GT1. The second insulating layer 20 can be an inorganic layer, and can have a single layer or a multi-layer structure. The second insulating layer 20 can include at least one of silicon oxide, silicon nitride, and silicon oxynitride. In the present embodiment, the second insulating layer 20 can have a single-layer structure including a silicon nitride layer.

[0081] The third insulating layer 30 can be disposed on the second insulating layer 20. The third insulating layer 30 can be an inorganic layer, and can have a single layer or a multi-layer structure. For example, the third insulating layer 30 can have a multi-layer structure including a silicon oxide layer and a silicon nitride layer. One electrode Csta of a capacitor can be disposed between the second insulating layer 20 and the third insulating layer 30. Also, the other electrode of the capacitor can be disposed between the first insulating layer 10 and the second insulating layer 20.

[0082] The second semiconductor pattern DE2, AC2, SE2 can be arranged over the third insulating layer 30. The second semiconductor pattern DE2, AC2, SE2 can include an oxide semiconductor. The oxide semiconductor can include a plurality of regions which are distinguished depending on whether a metal oxide is reduced. The region in which the metal oxide is reduced (second drain region DE2, second source region SE2, hereinafter referred to as a reduced region) has higher conductivity than the region in which the metal oxide is not reduced (second active region AC2, hereinafter referred to as a non-reduced region). The reduced region (second drain region DE2, second source region SE2) substantially functions as a source / drain of a transistor or a signal line. The non-reduced region (second active region AC2) substantially corresponds to an active region (or a semiconductor region, a channel) of a transistor. In other words, part of the second semiconductor pattern DE2, AC2, SE2 can be an active region of a transistor, another part of the second semiconductor pattern DE2, AC2, SE2 can be a source / drain region of a transistor, and still another part of the second semiconductor pattern DE2, AC2, SE2 can be a signal transfer region.

[0083] The second source region SE2, the second active region AC2, and the second drain region DE2 of the oxide thin film transistor O-TFT can be formed from the second semiconductor pattern DE2, AC2, SE2. The second source region SE2 and the second drain region DE2 can extend in directions opposite to each other from the second active region AC2 in a cross section.

[0084] The fourth insulating layer 40 can be arranged over the third insulating layer 30. The fourth insulating layer 40 can cover the second semiconductor pattern DE2, AC2, SE2. The fourth insulating layer 40 can be an inorganic layer and can have a single-layer or a multi-layer structure. The fourth insulating layer 40 can include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. In this embodiment, the fourth insulating layer 40 can have a single-layer structure including silicon oxide.

[0085] The second gate electrode GT2 of the oxide thin film transistor O-TFT is arranged over the fourth insulating layer 40. The second gate electrode GT2 can be part of a metal pattern. The second gate electrode GT2 overlaps with the second active region AC2. In a process of reducing the second semiconductor pattern DE2, AC2, SE2, the second gate electrode GT2 can function as a mask.

[0086] The second lower light-blocking layer BML2 can be arranged in a lower portion of the oxide thin film transistor O-TFT. The second lower light-blocking layer BML2 can be arranged between the second insulating layer 20 and the third insulating layer 30. The second lower light-blocking layer BML2 includes the same substance as one electrode Csta of the capacitor and can be formed by the same process.

[0087] A fifth insulating layer 50 can be disposed on the fourth insulating layer 40, and can cover the second gate electrode GT2. The fifth insulating layer 50 can be an inorganic layer and / or an organic layer, and can have a single layer or a multi-layer structure. For example, the fifth insulating layer 50 can have a multi-layer structure including a silicon oxide layer and a silicon nitride layer.

[0088] A first connection electrode CNE10 can be disposed on the fifth insulating layer 50. The first connection electrode CNE10 can be connected with the connection signal line CSL through a first contact hole CH1 penetrating the first insulating layer 10, the second insulating layer 20, the third insulating layer 30, the fourth insulating layer 40, and the fifth insulating layer 50.

[0089] A sixth insulating layer 60 can be disposed on the fifth insulating layer 50. A second connection electrode CNE20 can be disposed on the sixth insulating layer 60. The second connection electrode CNE20 can be connected with the first connection electrode CNE10 through a second contact hole CH2 penetrating the sixth insulating layer 60.

[0090] A seventh insulating layer 70 is disposed on the sixth insulating layer 60, and can cover the second connection electrode CNE20.

[0091] A third connection electrode CNE30 can be disposed on the seventh insulating layer 70. The third connection electrode CNE30 can be connected with the second connection electrode CNE20 through a third contact hole CH3 penetrating the seventh insulating layer 70. An eighth insulating layer 80 can be disposed on the seventh insulating layer 70, and can cover the third connection electrode CNE30.

[0092] The sixth insulating layer 60, the seventh insulating layer 70, and the eighth insulating layer 80 can be organic layers. For example, each of the sixth insulating layer 60, the seventh insulating layer 70, and the eighth insulating layer 80 can include a general-purpose polymer such as Benzocyclobutene (BCB), polyimide, Hexamethyldisiloxane (HMDSO), Polymethylmethacrylate (PMMA), or Polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, or a mixture thereof, etc.

[0093] The light emitting element ED can include a first electrode AE, a first functional layer HFL, a light emitting layer EL, a second functional layer EFL, and a second electrode CE. The first functional layer HFL, the second functional layer EFL, and the second electrode CE can be collectively provided in the pixel PX. The first functional layer HFL, the light emitting layer EL, and the second functional layer EFL can be referred to as an intermediate layer CEL. The first electrode AE can be referred to as a pixel electrode or an anode, and the second electrode CE can be referred to as a common electrode or a cathode.

[0094] The first electrode AE can be disposed on the eighth insulating layer 80. The first electrode AE can be connected to the third connection electrode CNE30 electrically connected to the pixel circuit PDC through the fourth contact hole CH4 penetrating the eighth insulating layer 80.

[0095] In an embodiment of the present application, the third connection electrode CNE30 can also be omitted. In this case, the first electrode AE can be connected to the second connection electrode CNE20 through the seventh insulating layer 70 and the eighth insulating layer 80. Also, in an embodiment of the present application, the third connection electrode CNE30 and the eighth insulating layer 80 can also be omitted. In this case, the first electrode AE can be disposed on the seventh insulating layer 70 and can also penetrate the seventh insulating layer 70 and be connected to the second connection electrode CNE20.

[0096] The first electrode AE can be a (semi-)transparent electrode or a reflective electrode. In an embodiment, the first electrode AE can include a reflective layer formed of silver, magnesium, aluminum, platinum, palladium, gold, nickel, neodymium, iridium, chromium, or a compound thereof, etc., and a transparent or semi-transparent electrode layer formed on the reflective layer. The transparent or semi-transparent electrode layer can include at least one selected from the group including indium tin oxide, indium zinc oxide, indium gallium zinc oxide, zinc oxide, or indium oxide, and aluminum-doped zinc oxide. For example, the first electrode AE can include a multi-layer structure in which indium tin oxide, silver, and indium tin oxide are sequentially stacked.

[0097] The pixel definition film PDL can be disposed on the eighth insulating layer 80. The pixel definition film PDL can have a property of absorbing light, for example, the pixel definition film PDL can have a black color. The pixel definition film PDL can include a black coloring agent. The black coloring agent can include a black dye and a black pigment. The black coloring agent can include carbon black, a metal such as chromium, or an oxide thereof.

[0098] An opening PDLop in which a portion of the first electrode AE is exposed can be defined in the pixel definition film PDL. That is, the pixel definition film PDL can cover an edge of the first electrode AE. The light emitting area PXA can be defined by the pixel definition film PDL.

[0099] The spacer HSPC can be disposed on the pixel definition film PDL. The protruding spacer SPC can be disposed on the spacer HSPC. The spacer HSPC and the protruding spacer SPC can have an integrated shape, and can be formed with the same substance. For example, the spacer HSPC and the protruding spacer SPC can be formed by the same process from a half-tone mask. However, this is only an example, and is not limited thereto. For example, the spacer HSPC and the protruding spacer SPC can include different materials from each other, and can be formed by separate processes.

[0100] The first functional layer HFL can be disposed on the first electrode AE, the pixel definition film PDL, the spacer HSPC, and the protruding spacer SPC. The first functional layer HFL can include a hole transport layer (HTL), or can include a hole injection layer (HIL), or can include both a hole transport layer and a hole injection layer. The first functional layer HFL can be disposed in the entire display area DA (refer to FIG. 1). Figure 1

[0101] The light emitting layer EL can be disposed on the first functional layer HFL, and can be disposed in a region corresponding to the opening PDLop of the pixel definition film PDL. The light emitting layer EL can include an organic material, an inorganic material, or an organic-inorganic material that emits light of a predetermined color.

[0102] The second functional layer EFL can be disposed on the first functional layer HFL, and can cover the light emitting layer EL. The second functional layer EFL can include an electron transport layer (ETL), or can include an electron injection layer (EIL), or can include both an electron transport layer and an electron injection layer. The second functional layer EFL can be disposed in the entire display area DA (refer to FIG. 1). Figure 1

[0103] The second electrode CE can be disposed on the second functional layer EFL. The second electrode CE can be disposed in the display area DA (refer to FIG. 1). Figure 1

[0104] ​​​The element layer 140 can further include a cover layer CPL disposed on the second electrode CE. The cover layer CPL can function to improve light emission efficiency by enhancing the principle of interference. The cover layer CPL can be an organic cover layer including an organic material, an inorganic cover layer including an inorganic material, or can be a composite cover layer including an organic material and an inorganic material. For example, the cover layer CPL can include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound can be optionally substituted with a substituent including oxygen (O), nitrogen (N), sulfur (S), selenium (Se), silicon (Si), fluorine (F), chlorine (Cl), bromine (Br), iodine (I), or any combination thereof.

[0105] The encapsulation layer 150 can be disposed on the element layer 140. The encapsulation layer 150 can include a first inorganic encapsulation layer 151, an organic encapsulation layer 152, and a second inorganic encapsulation layer 153, which are sequentially stacked. The first inorganic encapsulation layer 151 and the second inorganic encapsulation layer 153 can protect the element layer 140 from moisture and oxygen, and the organic encapsulation layer 152 can protect the element layer 140 from foreign substances such as dust particles.

[0106] In an embodiment of the present application, a low refractive index layer can be further disposed between the cover layer CPL and the encapsulation layer 150. The low refractive index layer can include lithium fluoride. The low refractive index layer can be formed by a thermal deposition method.

[0107] The sensor layer 200 can be disposed on the display layer 100. The sensor layer 200 can be referred to as a sensor, an input sensing layer, or an input sensing panel. The sensor layer 200 can include a sensor base layer 201, a first sensor conductive layer 202, an intermediate insulating layer 203, a second sensor conductive layer 204, and a cover layer 205.

[0108] The sensor base layer 201 can be directly disposed on the display layer 100. The sensor base layer 201 can be an inorganic layer including at least one of silicon nitride, silicon oxynitride, and silicon oxide. Alternatively, the sensor base layer 201 can be an organic layer including an epoxy resin, an acrylic resin, or an imide-based resin. The sensor base layer 201 can have a single layer structure or can have a multi-layer structure stacked in a third direction DR3.

[0109] Each of the first sensor conductive layer 202 and the second sensor conductive layer 204 can have a single layer structure, or can have a multi-layer structure stacked in the third direction DR3.

[0110] The conductive layer of the single layer structure can include a metal layer or a transparent conductive layer. The metal layer can include molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), or an alloy thereof. The transparent conductive layer can include a transparent conductive oxide such as indium tin oxide, indium zinc oxide, zinc oxide, or indium zinc tin oxide. In addition, the transparent conductive layer can include a conductive polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT), a metal nanowire, graphene, or the like.

[0111] The conductive layer of the multi-layer structure can include a metal layer. For example, the metal layer can have a three-layer structure of titanium / aluminum / titanium. The conductive layer of the multi-layer structure can include at least one metal layer and at least one transparent conductive layer.

[0112] The intermediate insulating layer 203 can be disposed between the first sensor conductive layer 202 and the second sensor conductive layer 204. The intermediate insulating layer 203 can include an organic film. The organic film can include at least one of an acrylic resin, a methacrylic resin, a polyisoprene resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyimide-based resin, a polyamide-based resin, and a perylene-based resin.

[0113] Alternatively, the intermediate insulating layer 203 can include an inorganic film. The inorganic film can include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide.

[0114] The cover layer 205 can be disposed on the intermediate insulating layer 203 and can cover the second sensor conductive layer 204. The second sensor conductive layer 204 can include a conductive pattern. The cover layer 205 can cover the conductive pattern and can reduce or eliminate the possibility of damage to the conductive pattern in a subsequent process. The cover layer 205 can include an inorganic substance. For example, the cover layer 205 can include silicon nitride, but is not particularly limited thereto. In an embodiment of the present application, the cover layer 205 can also be omitted.

[0115] The anti-reflection layer 300 can be disposed on the sensor layer 200. The anti-reflection layer 300 can include a division layer 310, a plurality of color filters 320, and a planarization layer 330.

[0116] The division layer 310 can be disposed to overlap the conductive pattern of the second sensor conductive layer 204. The cover layer 205 can be disposed between the division layer 310 and the second sensor conductive layer 204. The division layer 310 can prevent external light reflection caused by the second sensor conductive layer 204. The substance constituting the division layer 310 is not particularly limited as long as it is a light-absorbing substance. The division layer 310, as a layer having black color, can include a black coloring agent in an embodiment. The black coloring agent can include a black dye and a black pigment. The black coloring agent can include carbon black, a metal such as chromium, or an oxide thereof.

[0117] The division layer 310 can be defined with a division opening 310op. The division opening 310op can overlap the light emitting layer EL. The color filter 320 can be disposed in correspondence with the division opening 310op. The color filter 320 can transmit light provided from the light emitting layer EL overlapping the color filter 320.

[0118] The planarization layer 330 can cover the division layer 310 and the color filter 320. The planarization layer 330 can include an organic substance, and can provide a flat surface on the upper surface of the planarization layer 330. In an embodiment, the planarization layer 330 can also be omitted.

[0119] In an embodiment of the present disclosure, the anti-reflection layer 300 can include a reflection adjustment layer instead of the plurality of color filters 320. For example, in Figure 3 The color filter 320 is omitted in the illustration of FIG. 10, and a reflection adjustment layer can be added in a position where the color filter 320 is omitted. The reflection adjustment layer can selectively absorb light reflected from the inside of the display panel and / or the electronic device or a part of the wavelength band of light incident from the outside of the display panel and / or the electronic device.

[0120] As an example, the reflection adjustment layer can absorb light in a first wavelength region of 490 nm to 505 nm and a second wavelength region of 585 nm to 600 nm, so that the light transmittance in the first wavelength region and the second wavelength region can be equipped to be 40% or less. The reflection adjustment layer can absorb light of a wavelength other than the wavelength range of red, green, and blue light emitted from the light emitting layer EL. As described above, the reflection adjustment layer can absorb light of a wavelength other than the wavelength range of red, green, or blue emitted from the light emitting layer EL, thereby preventing or minimizing the reduction in brightness of the display panel and / or the electronic device. Also, at the same time, the reduction in light emitting efficiency of the display panel and / or the electronic device can be prevented or minimized, and the visibility can be improved.

[0121] The reflection adjustment layer can be equipped with an organic layer including a dye, a pigment, or a combination thereof. The reflection adjustment layer can include a Tetraazaporphyrin (TAP) compound, a Porphyrin compound, a Metal Porphyrin compound, an Oxazine compound, a Squarylium compound, a Triarylmethane compound, a Polymethine compound, an anthraquinone compound, a Phthalocyanine compound, an azo compound, a perylene compound, a Xanthene compound, a diammonium compound, a Dipyrromethene compound, a Cyanine compound, and a combination thereof.

[0122] In an embodiment, the reflection adjustment layer can have a transmittance of about 64% to 72%. The transmittance of the reflection adjustment layer can be adjusted according to the content of the pigment and / or dye included in the reflection adjustment layer.

[0123] In an embodiment of the present disclosure, the anti-reflection layer 300 can include a retarder and / or a polarizer. The anti-reflection layer 300 can include at least a polarizing film. In this case, the anti-reflection layer 300 can be attached to the sensor layer 200 through an adhesive layer.

[0124] Figure 4 is a plan view of a display layer 100 according to an embodiment of the present disclosure.

[0125] Referring to Figure 4 , a display area 100DA in which a display image is defined and a peripheral area 100NDA adjacent to the display area 100DA can be defined in the display layer 100. The display area 100DA can correspond to a display area DA (refer to Figure 1 ) of the electronic device 1000 (refer to Figure 1 ), and the peripheral area 100NDA can correspond to a peripheral area NDA (refer to Figure 1 ) of the electronic device 1000 (refer to Figure 1 ). In the present specification, "an area / portion corresponds to an area / portion" means overlapping, and is not limited to the same area.

[0126] In Figure 4A part of the configuration included in the display layer 100 is shown in FIG. 1. The display layer 100 can include a plurality of pixels PX, a plurality of lines DL1 to DLm, a plurality of first pads PD1, and a plurality of second pads PD2. In addition to the configuration shown in FIG. 1, the display layer 100 can include other configurations. Figure 4 In addition to the configuration shown in FIG. 1, the display layer 100 can include other configurations.

[0127] The display region 100DA and the non-display region 100NDA can be distinguished according to whether the pixels PX are arranged or not. The pixels PX can be arranged in the display region 100DA, and the lines DL1 to DLm connected to the pixels PX can be arranged in the display region 100DA and the non-display region 100NDA, and the first pads PD1 and the second pads PD2 can be arranged in the non-display region 100NDA. In an embodiment of the present application, a driver chip can be mounted in the non-display region 100NDA, or a flexible circuit film on which the driver chip is mounted can be electrically connected to the first pads PD1.

[0128] Figure 5 is a plan view of a sensor layer 200 according to an embodiment of the present application.

[0129] Referring to Figure 5 , the sensor layer 200 can include a plurality of first electrodes 210 and a plurality of second electrodes 220.

[0130] The first electrodes 210 can be arranged along a first direction DR1, and the second electrodes 220 can be arranged along a second direction DR2 intersecting the first direction DR1. Each of the first electrodes 210 can extend along the second direction DR2, and each of the first electrodes 210 can cross the second electrodes 220. Each of the second electrodes 220 can extend along the first direction DR1, and each of the second electrodes 220 can cross the first electrodes 210.

[0131] The sensor layer 200 can be defined with a sensing region SA and a non-sensing region NSA adjacent to the sensing region SA. The sensing region SA can correspond to the display region 100DA of the display layer 100 (refer to Figure 4 ), and the non-sensing region NSA can correspond to the non-display region 100NDA of the display layer 100 (refer to Figure 4 ). The first electrodes 210 and the second electrodes 220 can overlap the sensing region SA.

[0132] In an embodiment of the present application, each of the second electrodes 220 can include two split electrodes. Accordingly, the number of the split electrodes can be twice the number of the second electrodes 220. Each of the second electrodes 220 can include a first split electrode 220d1c and a second split electrode 220d2c. In an embodiment of the present application, the sensor driving part 200C (refer to Figure 2The coordinates can be calculated using signals provided from the first and second divided electrodes 220d1c and 220d2c of the second electrode 220. In this case, as the coordinates are corrected or noise included in the signals is removed, the accuracy of the coordinates can be improved, and the possibility of a touch malfunction can be reduced.

[0133] Hereinafter, the first and second divided electrodes 220d1c and 220d2c of one of the second electrodes 220-1 are referred to as a first divided electrode 220d1 and a second divided electrode 220d2, respectively. The first and second divided electrodes 220d1c and 220d2c of the other of the second electrodes 220-2 are referred to as a third divided electrode 220d3 and a fourth divided electrode 220d4, respectively.

[0134] Each of the first and second divided electrodes 220d1 and 220d2 can extend in the first direction DR1, and the first and second divided electrodes 220d1 and 220d2 can be spaced apart in the second direction DR2. Each of the third and fourth divided electrodes 220d3 and 220d4 can extend in the first direction DR1, and the third and fourth divided electrodes 220d3 and 220d4 can be spaced apart in the second direction DR2. The first, second, third, and fourth divided electrodes 220d1, 220d2, 220d3, and 220d4 can be arranged in order in the second direction DR2.

[0135] The first electrodes 210 can correspond to the channels, respectively, and can correspond to the channels of the second electrodes 220, respectively. An area in which one of the first electrodes 210 and one of the second electrodes 220 cross each other can be defined as one sensing node or one sensing unit. Accordingly, according to an embodiment of the present application, one first electrode 210 and two divided electrodes (for example, one first electrode 210, a first divided electrode 220d1, and a second divided electrode 220d2) can overlap each other in one sensing node.

[0136] In Figure 5 In FIG. 10, eight first electrodes 210 and twelve second electrodes 220 are exemplarily illustrated, but the number of each of the first and second electrodes 210 and 220 is not particularly limited thereto. For example, the number of the first electrodes 210 and the number of the second electrodes 220 can be variously changed according to a screen ratio or a screen size of the electronic device 1000 (refer to FIG. 1). Figure 1

[0137] The sensor layer 200 can further include a plurality of first traces 210t and a plurality of second traces 220t. The first traces 210t can be electrically connected with the first electrodes 210, and the second traces 220t can be electrically connected with the second electrodes 220.​

[0138] In an embodiment of the present application, each of the second traces 220t can include two split traces. For example, one of the second traces 220t can include a first split trace 220td1 and a second split trace 220td2. The first split trace 220td1 can be connected to the first split electrode 220d1 in a region overlapping the sensing area SA, and the second split trace 220td2 can be connected to the second split electrode 220d2 in a region overlapping the sensing area SA.

[0139] Also, another of the second traces 220t can include a third split trace 220td3 and a fourth split trace 220td4. The third split trace 220td3 can be connected to the third split electrode 220d3 in a region overlapping the sensing area SA, and the fourth split trace 220td4 can be connected to the fourth split electrode 220d4 in a region overlapping the sensing area SA.

[0140] In an embodiment of the present application, the first trace 210t and the first electrode 210 and the second trace 220t and the second electrode 220 can be connected to each other in various ways. For example, the first trace 210t can be connected to the first electrode 210 in a region overlapping the sensing area SA, and the second trace 220t can be connected to the second electrode 220 in a region overlapping the sensing area SA. Figure 5 In an embodiment of the present application, the first trace 210t and the first electrode 210 and the second trace 220t and the second electrode 220 can be connected to each other in various ways. For example, the first trace 210t can be connected to the first electrode 210 in a region overlapping the sensing area SA, and the second trace 220t can be connected to the second electrode 220 in a region overlapping the sensing area SA.

[0141] According to an embodiment of the present application, the second traces 220t can extend in the second direction DR2 in a region overlapping the sensing area SA. For example, the first split trace 220td1, the second split trace 220td2, the third split trace 220td3, and the fourth split trace 220td4 can extend in the second direction DR2. At this time, the lengths of each of the second traces 220t can be the same as each other in a region overlapping the sensing area SA.

[0142] In an embodiment of the present application, a portion of the second traces 220t can be disposed in the sensing area SA. Another portion of the second traces 220t can be disposed in the peripheral area NSA adjacent to the sensing area SA in the second direction DR2. Also, in an embodiment, the second traces 220t can not be disposed in the peripheral area NSA adjacent to the sensing area SA in the first direction DR1. Accordingly, the area of the peripheral area NSA can be reduced. As a result, the area occupied by the peripheral area NDA (refer to FIG. 2B) in the display face IS (refer to FIG. 2A) of the electronic device 1000 (refer to FIG. 2A) can be reduced, and a narrow bezel can be implemented. Figure 1 Figure 1 Figure 1

[0143] ​​​In an embodiment of the present application, one end of each of the first traces 210t and one end of each of the second traces 220t can be electrically connected with the second pad PD2. Although Figure 5 The second pads PD2 are exemplarily shown to be arranged in the first direction DR1, but are not limited thereto, and the arrangement of the second pads PD2 can be deformed.

[0144] Figure 6 is a view enlarging an AA' region of the sensor layer 200 according to an embodiment of the present application. Figure 5 In the view, the same reference numerals are assigned to the same configurations as those explained in Figure 6 , and the explanation thereof is omitted. Figure 5

[0145] Referring to Figure 5 and Figure 6 , the sensing region SA of the sensor layer 200 can include a plurality of sensing units SU arranged in the first direction DR1 and the second direction DR2. Each of the sensing units SU can overlap one of the first electrodes 210 and one of the second electrodes 220.

[0146] Figure 6 Six sensing units SU are shown, and a portion of three first electrodes 210 and a portion of two second electrodes 220-1, 220-2 are shown. That is, a portion of the first divided electrode 220d1, the second divided electrode 220d2, the third divided electrode 220d3, the fourth divided electrode 220d4 is shown, and at the same time, a portion of the first divided trace 220td1, the second divided trace 220td2, the third divided trace 220td3, the fourth divided trace 220td4 electrically connected with the first divided electrode 220d1, the second divided electrode 220d2, the third divided electrode 220d3, the fourth divided electrode 220d4, respectively, is shown.

[0147] In an embodiment of the present application, the second electrodes 220 can include a plurality of sensing patterns 221 and a plurality of bridge patterns 222. For example, the first divided electrode 220d1 of one second electrode 220 can include a first sensing pattern 221-1 and a first bridge pattern 222-1 spaced apart in the first direction DR1, and the second divided electrode 220d2 of one second electrode 220 can include a second sensing pattern 221-2 and a second bridge pattern 222-2 spaced apart in the first direction DR1.

[0148] The first sensing pattern 221-1 and the second sensing pattern 221-2 can both be referred to as the sensing pattern 221, and the first bridge pattern 222-1 and the second bridge pattern 222-2 can both be referred to as the bridge pattern 222. Although Figure 6 ​The sensing pattern 221 and the bridge pattern 222 of the first divided electrode 220d1 and the second divided electrode 220d2 are exemplarily illustrated, but the same can apply to the third divided electrode 220d3 and the fourth divided electrode 220d4.

[0149] In an embodiment of the present application, the first bridge pattern 222-1 and the second bridge pattern 222-2 can be spaced apart along the second direction DR2, and can be symmetrical with respect to a virtual line IML1 extending along the first direction DR1.

[0150] If exemplarily described with the first divided electrode 220d1, the first sensing pattern 221-1 can be spaced apart along the first direction DR1, and the first bridge pattern 222-1 can electrically connect the first sensing patterns 221-1 adjacent to each other to each other. In Figure 6 In the embodiment, an example in which two first sensing patterns 221-1 adjacent to each other are electrically connected to each other by one first bridge pattern 222-1 is illustrated, but is not particularly limited thereto.

[0151] Each of the first electrodes 210 can extend along the second direction DR2, and can include a sensing portion 211 and a connection portion 212. The sensing portion 211 and the connection portion 212 can be disposed on the same layer as each other and have an integrated shape. The connection portion 212 can be insulated from the first bridge pattern 222-1 and the second bridge pattern 222-2.

[0152] The first divided trace 220td1, the second divided trace 220td2, the third divided trace 220td3, and the fourth divided trace 220td4 can be electrically connected to the first divided electrode 220d1, the second divided electrode 220d2, the third divided electrode 220d3, and the fourth divided electrode 220d4, respectively. For example, the first divided trace 220td1 can be electrically connected to the first divided electrode 220d1 through the first contact ct1. The second divided trace 220td2 can be electrically connected to the second divided electrode 220d2 through the second contact ct2, the third divided trace 220td3 can be electrically connected to the third divided electrode 220d3 through the third contact ct3. The fourth divided trace 220td4 can be electrically connected to the fourth divided electrode 220d4 through the fourth contact ct4.

[0153] In an embodiment of the present application, the sensing pattern 221 and the bridge pattern 222 can be disposed on different layers from each other. Also, the first divided trace 220td1, the second divided trace 220td2, the third divided trace 220td3, and the fourth divided trace 220td4 can be disposed on the same layers as the bridge pattern 222. For a detailed description thereof, reference can be made to the above description. Figure 3The sensing pattern 221 can be a configuration included in the second sensor conductive layer 204, and the bridge pattern 222 and the first to fourth divided traces 220td1, 220td2, 220td3, 220td4 can be configurations included in the first sensor conductive layer 202.

[0154] In one embodiment of the present application, the first and second divided traces 220td1, 220td2 can be arranged between the two most adjacent bridge patterns 222 among the plurality of bridge patterns 222, and the third and fourth divided traces 220td3, 220td4 can be arranged between the other two most adjacent bridge patterns 222 among the bridge patterns 222. Also, the second and third divided traces 220td2, 220td3 can be arranged apart from each other with one bridge pattern 222 therebetween.

[0155] That is, in the region overlapping the sensing region SA, the first distance D1 between the first and second divided traces 220td1, 220td2 can be smaller than the second distance D2 between the second and third divided traces 220td2, 220td3.

[0156] In one embodiment of the present application, the first to fourth divided electrodes 220d1, 220d2, 220d3, 220d4 can be electrodes that divide each of the two second electrodes 220 into two. Accordingly, the maximum width W1 in the second direction DR2 of each of the first to fourth divided electrodes 220d1, 220d2, 220d3, 220d4 can be half of the maximum width in the second direction DR2 of each of the second electrodes 220. Also, the maximum width W1 in the second direction DR2 of each of the first to fourth divided electrodes 220d1, 220d2, 220d3, 220d4 can be smaller than the maximum width W2 in the first direction DR1 of one of the first electrodes 210. For example, a first width W1 that is the maximum width in the second direction DR2 of the first divided electrode 220d1 can be smaller than a second width W2 that is the maximum width in the first direction DR1 of one of the first electrodes 210.

[0157] Figure 7 is a plan view of one sensing unit SU according to one embodiment of the present application.

[0158] Referring to Figure 3 , Figure 6 and Figure 7 , in Figure 7In the drawing, a sensing portion 211 included in a first electrode 210 and a first sensing pattern 221-1 and a second sensing pattern 221-2 included in a first divided electrode 220d1 and a second divided electrode 220d2, respectively, are exemplarily shown.

[0159] In an embodiment of the present application, Figure 7 The configuration shown can be a configuration included in Figure 3 The configuration of the second sensor conductive layer 204 shown. Thus, Figure 7 The bridge pattern 222 not shown in the drawing can be a configuration included in the first sensor conductive layer 202. That is, the sensor layer 200 can have a bottom bridge structure. However, the present application is not limited thereto. For example, Figure 7 The configuration shown in the drawing can be a configuration included in the first sensor conductive layer 202, in which case the sensor layer 200 has a structure in which the sensing pattern 221 is arranged closer to the display layer 100 than the bridge pattern 222. Thus, the sensor layer 200 can have a top bridge structure.

[0160] In an embodiment of the present application, each of the sensing portion 211, the first sensing pattern 221-1, and the second sensing pattern 221-2 can have a mesh structure. Also, the sensing portion 211, the first sensing pattern 221-1, and the second sensing pattern 221-2 can be electrically separated from each other by cutting boundaries of the mesh structure. In Figure 7 In the drawing, boundaries of the mesh structure are shown in dotted lines.

[0161] Figure 8 is a drawing that enlarges an AA' region of Figure 5 of the display device according to an embodiment of the present application.

[0162] Referring to Figure 5 and Figure 8 , Figure 8 Six sensing units SU are exemplarily shown, and a portion of three first electrodes 210 and a portion of two second electrodes 220-1, 220-2 are shown. That is, a portion of the first divided electrode 220d1', the second divided electrode 220d2', the third divided electrode 220d3', the fourth divided electrode 220d4' is shown, and a portion of the first divided trace 220td1, the second divided trace 220td2, the third divided trace 220td3, the fourth divided trace 220td4 electrically connected to the first divided electrode 220d1', the second divided electrode 220d2', the third divided electrode 220d3', the fourth divided electrode 220d4', respectively, is shown.

[0163] In one embodiment of the present invention, the second electrode 220 may include a plurality of sensing patterns 221' and a plurality of bridging patterns 222'. For example, a first segmented electrode 220d1' of a second electrode 220 may include a first sensing pattern 221-1' and a first bridging pattern 222-1' separated along a first direction DR1. A second segmented electrode 220d2' of a second electrode 220 may include a second sensing pattern 221-2' and a second bridging pattern 222-2' separated along a first direction DR1.

[0164] Both the first sensing pattern 221-1' and the second sensing pattern 221-2' can be referred to as sensing pattern 221', and both the first bridging pattern 222-1' and the second bridging pattern 222-2' can be referred to as bridging pattern 222'. Figure 8 The sensing pattern 221' and bridging pattern 222' of the first segmented electrode 220d1' and the second segmented electrode 220d2' are illustrated by way of example, but the description of the third segmented electrode 220d3' and the fourth segmented electrode 220d4' can also be the same.

[0165] The first dividing trace 220td1, the second dividing trace 220td2, the third dividing trace 220td3, and the fourth dividing trace 220td4 can be electrically connected to the first dividing electrode 220d1', the second dividing electrode 220d2', the third dividing electrode 220d3', and the fourth dividing electrode 220d4', respectively. For example, the first dividing trace 220td1 can be electrically connected to the first dividing electrode 220d1' through the first contact ct1', the second dividing trace 220td2 can be electrically connected to the second dividing electrode 220d2' through the second contact ct2', the third dividing trace 220td3 can be electrically connected to the third dividing electrode 220d3' through the third contact ct3', and the fourth dividing trace 220td4 can be electrically connected to the fourth dividing electrode 220d4' through the fourth contact ct4'.

[0166] In one embodiment of the present invention, with Figure 6 different, Figure 8 Each of the first sensing pattern 221-1' and the second sensing pattern 221-2' may have a rod structure. Furthermore, each of the first electrode 210, the first sensing pattern 221-1', and the second sensing pattern 221-2' may be electrically isolated from each other.

[0167] Figure 9 This is a graph showing the waveforms of the first signal SGt1 and the second signal SGt2 according to an embodiment of the present invention. Figure 10 This is a diagram illustrating the driving of the first circuit CC1 in an embodiment of the present invention.

[0168] Figure 9 The first and second intervals T1 and T2, which are different from each other, are shown as changing with time, and Figure 10 The first and second intervals T1 and T2, which are different from each other, are shown as changing with time, and Figure 6 A portion of the sensor layer 200 and the sensor driving section 200C in the region AA' is shown exemplarily. Figure 10 In the present embodiment, the same reference numerals are assigned to the same configurations as those described in Figure 6 The same reference numerals are assigned to the same configurations as those described in the foregoing embodiment, and the description thereof is omitted.

[0169] Referring to Figure 2 , Figure 5 , Figure 9 and Figure 10 , the sensor driving section 200C can include a first circuit CC1. In an embodiment of the present application, the first circuit CC1 can include a switching circuit SW, a first coordinate signal generation section SGM1, and a second coordinate signal generation section SGM2.

[0170] The switching circuit SW can operate in order to selectively receive the first signal SGt1 or the second signal SGt2.

[0171] The first signal SGt1 can be supplied from the first divided electrode 220d1, and can be a signal supplied through the first divided trace 220td1 electrically connected to the first divided electrode 220d1. The second signal SGt2 can be supplied from the second divided electrode 220d2, and can be a signal supplied through the second divided trace 220td2 electrically connected to the second divided electrode 220d2. The switching circuit SW can electrically connect the first coordinate signal generation section SGM1 to the first divided electrode 220d1, or can electrically connect the first coordinate signal generation section SGM1 to the second divided electrode 220d2.

[0172] The first coordinate signal generation section SGM1 can generate a first intermediate coordinate signal SG1 by receiving the first signal SGt1 from the first divided electrode 220d1 of the second electrode 220. Also, the first coordinate signal generation section SGM1 can generate a second intermediate coordinate signal SG2 by receiving the second signal SGt2 from the second divided electrode 220d2 of the second electrode 220. In Figure 10 In the present embodiment, the first signal SGt1 supplied through the first divided trace 220td1 electrically connected to the first divided electrode 220d1 and the second signal SGt2 supplied through the second divided trace 220td2 electrically connected to the second divided electrode 220d2 are illustrated as examples.

[0173] In one embodiment of the present application, the first coordinate signal generation section SGM1 can receive the first signal SGt1 through the switch circuit SW in the first interval T1, and can receive the second signal SGt2 through the switch circuit SW in the second interval T2. At this time, the second interval T2 can be continuous in time with the first interval T1. Therefore, the first coordinate signal generation section SGM1 can generate the first intermediate coordinate signal SG1 based on the first signal SGt1, and subsequently, the first coordinate signal generation section SGM1 can receive the second signal SGt2 to generate the second intermediate coordinate signal SG2.

[0174] In one embodiment of the present application, the relative position information or coordinate information for the first divided electrode 220d1 and the second divided electrode 220d2 can be stored in the sensor drive section 200C. Therefore, the second coordinate signal generation section SGM2 can generate the coordinate signal OSG1 by performing an operation on the barycenter of the first intermediate coordinate signal SG1 and the second intermediate coordinate signal SG2.

[0175] According to one embodiment of the present application, the first circuit CC1 can correct the coordinate using the signals SGt1, SGt2 provided by the two divided traces 220td1, 220td2 electrically connected with the two divided electrodes 220d1, 220d2 overlapping with one sensing unit SU. Therefore, the coordinate calculated according to one embodiment of the present application can improve accuracy compared to the coordinate calculated from the signal provided by one trace electrically connected with one electrode overlapping with one sensing unit SU, and thus, the possibility of misoperation when touching 2000 can be reduced.

[0176] Figure 11 is a graph showing the waveforms of the second signal SGt2 and the third signal SGt3, respectively, of one embodiment of the present application. Figure 12 is a graph for explaining the driving of the second circuit CC2 of one embodiment of the present application.

[0177] Figure 11 The third interval T3 overlapping in time is shown, and Figure 12 is schematically shown Figure 6 A region AA' of the sensor layer 200 and a part of the sensor drive section 200C are shown. In Figure 12 , the same components as those explained in Figure 6 are labeled with the same reference numerals, and the explanation thereof is omitted.

[0178] Reference is made to Figure 2 , Figure 5 , Figure 11 and Figure 12The sensor driving unit 200C may include a second circuit CC2. The second circuit CC2 may be a circuit for noise removal. For example, the second circuit CC2 may be configured to perform a differential operation on a signal received from a second segmented electrode 220d2 of one second electrode 220-1 and a signal received from a third segmented electrode 220d3 of another second electrode 220-2. The signal received from the second segmented electrode 220d2 may be a second signal SGt2, and the signal received from the third segmented electrode 220d3 may be a third signal SGt3. The second circuit CC2 may be used to remove noise from the third signal SGt3.

[0179] The second signal SGt2 can be a signal provided through the second segmentation trace 220td2 electrically connected to the second segmentation electrode 220d2, and the third signal SGt3 can be a signal provided through the third segmentation trace 220td3 electrically connected to the third segmentation electrode 220d3. As described above, the third segmentation electrode 220d3 and the fourth segmentation electrode 220d4 included in the other second electrode 220 can be referred to as the first segmentation electrode and the second segmentation electrode, respectively. Therefore, the third signal SGt3 can be referred to as the first signal.

[0180] The second segmentation trace 220td2 and the third segmentation trace 220td3 can be connected to the display area 100DA of the display layer 100 (see reference). Figure 4 Overlap. Therefore, depending on the operation of the display layer 100, noise may be generated in the second segmented trace 220d2 and the third segmented trace 220d3. In one embodiment of the invention, the second circuit CC2 may include an amplifier AMP for noise removal. The amplifier AMP can receive a second signal SGt2 from the second segmented electrode 220d2 and a third signal SGt3 from the third segmented electrode 220d3, and can generate a differential amplified signal OSG2 by performing a differential operation on the second signal SGt2 and the third signal SGt3. At this time, the second signal SGt2 can be used as the differential signal of the third signal SGt3 of the signal of the next channel. By performing a differential operation on the second signal SGt2 and the third signal SGt3, the noise included in the second signal SGt2 and the third signal SGt3 can be removed.

[0181] exist Figure 12In the present embodiment, the second signal SGt2 supplied through the second divided trace 220td2 electrically connected to the second divided electrode 220d2 and the third signal SGt3 supplied through the third divided trace 220td3 electrically connected to the third divided electrode 220d3 are described as examples. However, the present embodiment is not limited thereto, and a signal supplied through one divided trace can be used as a differential signal of a signal supplied through another divided trace of the next channel, so that a differential amplification signal can be generated by a differential operation. Thus, noise in the signal can be removed by the differential operation.

[0182] Figure 13 FIG. 8 is a diagram for explaining driving of the first circuit CC1 and the second circuit CC2 of an embodiment of the present application. In Figure 13 In the present embodiment, the same components as those described in Figure 10 and Figure 12 are denoted by the same reference numerals, and the description thereof will be omitted.

[0183] Referring to Figure 9 , Figure 11 and Figure 13 , the sensor driving section 200C can include the first circuit CC1 and the second circuit CC2.

[0184] In an embodiment of the present application, the first circuit CC1 and the second circuit CC2 can operate simultaneously. For example, the third interval T3 in which the second circuit CC2 operates can overlap in time with at least a part of the first interval T1 and the second interval T2 in which the first circuit CC1 operates. At this time, the third interval T3 can overlap in time with either the first interval T1 or the second interval T2, and the third interval T3 can overlap in time with both the first interval T1 and the second interval T2. Also, the third interval T3 can overlap in time with only a part of either the first interval T1 or the second interval T2.

[0185] In an embodiment of the present application, the first circuit CC1 and the second circuit CC2 can operate sequentially. For example, the second circuit CC2 can operate after the first circuit CC1 operates. At this time, the third interval T3 in which the second circuit CC2 operates can be positioned after the first interval T1 and the second interval T2 in which the first circuit CC1 operates.

[0186] In an embodiment of the present application, at least one of the first circuit CC1 and the second circuit CC2 can be omitted. Thus, the sensor driving section 200C can include either the first circuit CC1 or the second circuit CC2.

[0187] While the present application has been described with reference to the preferred embodiments thereof, it is to be understood that the application is not limited to the preferred embodiments and that modifications and variations are possible without departing from the spirit and technical scope of the application as set forth in the claims. Therefore, the technical scope of the present application should not be limited to the contents described in the detailed description of the application, but should be determined by the claims.

Claims

1. An electronic device comprising: The sensor layer defines a sensing area and a surrounding area adjacent to the sensing area; as well as The sensor driver unit is electrically connected to the sensor layer. The sensor layer includes: Multiple first electrodes are arranged along a first direction; Multiple second electrodes are arranged along a second direction that intersects the first direction; Multiple first traces are electrically connected to the multiple first electrodes; and Multiple second traces are electrically connected to the multiple second electrodes, and a portion of the multiple second traces are arranged in the peripheral region. Each of the plurality of second electrodes includes: A first segmenting electrode extends along the first direction; and a second segmenting electrode extends along the second direction, spaced apart from the first segmenting electrode, and also extending along the first direction. The sensor driving unit includes: The first circuit is configured to generate a first intermediate coordinate signal by receiving a first signal from the first segmented electrode of the plurality of second electrodes, to generate a second intermediate coordinate signal by receiving a second signal from the second segmented electrode of the plurality of second electrodes, and to generate a coordinate signal based on the first intermediate coordinate signal and the second intermediate coordinate signal.

2. The electronic device according to claim 1, wherein, The first circuit includes a switching circuit for selectively receiving the first signal or the second signal.

3. The electronic device according to claim 2, wherein, The first circuit also includes: The first coordinate signal generating unit receives the first signal through the switching circuit in the first interval to generate the first intermediate coordinate signal, and receives the second signal in the second interval that is continuous with the first interval in time to generate the second intermediate coordinate signal.

4. The electronic device according to claim 3, wherein, The first circuit also includes: The second coordinate signal generation unit generates the coordinate signal by performing centroid calculation on the first intermediate coordinate signal and the second intermediate coordinate signal.

5. The electronic device according to claim 1, wherein, The sensor driving unit also includes: The second circuit includes an amplifier that generates a differentially amplified signal by performing a differential operation on a second signal received from a second segmented electrode of one of the plurality of second electrodes and a first signal received from a first segmented electrode of another of the plurality of second electrodes.

6. The electronic device according to claim 1, wherein, The plurality of second traces extend along the second direction in the region overlapping with the sensing region. In the region overlapping with the sensing region, each of the plurality of second traces has the same length as the others.

7. The electronic device according to claim 1, wherein, The first width, which is the maximum width of the first dividing electrode in the second direction, is less than the second width, which is the maximum width of one of the plurality of first electrodes in the first direction.

8. The electronic device according to claim 1, wherein, The first segmented electrode includes: Multiple sensing patterns, spaced apart along the first direction; and Multiple bridging patterns are arranged on a different layer from the multiple sensing patterns and are electrically connected to the multiple sensing patterns. The plurality of second traces are arranged on the same layer as the plurality of bridging patterns. The plurality of second traces include: A first segmented trace is connected to the first segmented electrode of one of the plurality of second electrodes; and The second segmentation trace is connected to the second segmentation electrode of the second electrode. The first dividing trace and the second dividing trace are arranged between the two closest bridging patterns in the plurality of bridging patterns.

9. The electronic device according to claim 8, wherein, The plurality of second traces include: A third segmented trace is connected to the first segmented electrode of another second electrode among the plurality of second electrodes; and The fourth segmentation trace is connected to the second segmentation electrode of the other second electrode. In the region overlapping with the sensing area, the first distance between the first segmentation trace and the second segmentation trace is less than the second distance between the second segmentation trace and the third segmentation trace.

10. An electronic device comprising: The sensor layer defines a sensing area and a surrounding area adjacent to the sensing area; as well as The sensor driver unit is electrically connected to the sensor layer. The sensor layer includes: Multiple first electrodes are arranged along a first direction; Multiple second electrodes are arranged along a second direction that intersects the first direction; Multiple first traces are electrically connected to the multiple first electrodes; and Multiple second traces are electrically connected to the multiple second electrodes, and a portion of the multiple second traces are arranged in the peripheral region. One of the plurality of second electrodes includes a first segmented electrode and a second segmented electrode spaced apart along the second direction. Another second electrode among the plurality of second electrodes includes a third segmented electrode and a fourth segmented electrode spaced apart along the second direction. The first segmenting electrode, the second segmenting electrode, the third segmenting electrode, and the fourth segmenting electrode are arranged sequentially along the second direction. The sensor driving unit is configured to perform differential operations on the signal received from the second segmented electrode and the signal received from the third segmented electrode.

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