Power enhancement module
By using a multi-layer PCB design and metal strip welding of high-current wafer pads, combined with a high thermal conductivity ceramic-based circuit board, the problems of high module manufacturing cost and insufficient heat dissipation were solved, achieving efficient electrical conductivity and heat dissipation of the module and improving its operating power.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-12-20
- Publication Date
- 2026-04-10
AI Technical Summary
Existing modules are expensive to manufacture, the wire bonding process makes it difficult to deliver large current signals, and the heat dissipation capacity is insufficient, which affects the module's operating power.
The module employs a multi-layer PCB design and metal strip welding of high-current wafer pads, combined with a ceramic-based circuit board with high thermal conductivity, to enhance the module's electrical conductivity and heat dissipation performance.
This reduces the module manufacturing cost, improves the module's conductivity and heat dissipation capabilities, and thus increases the module's operating power.
Smart Images
Figure CN121842946A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a smart module package for electronic products. A plurality of circuit boards are welded to form a stacked module; a high-thermal-conductivity circuit board such as a ceramic-based circuit board can be used to increase the efficiency of the module; a metal strip is used to weld and connect the wafer's large-current signal pads, thereby increasing the power of the module. The present application relates to a circuit board process. BACKGROUND
[0002] With the advancement of technology, circuit boards are widely used in electronic products. Circuit boards are important electronic components and are the support for electronic components and the carrier for the electrical connection of electronic components.
[0003] A circuit board is composed of a circuit layer and a substrate layer; different types are produced by different substrate layer materials and different numbers of layers.
[0004] A ceramic-based circuit board refers to a special process board in which a copper foil is directly bonded to the surface of a ceramic substrate at high temperature. The resulting composite substrate has excellent electrical insulation properties and high thermal conductivity. It includes a ceramic base layer and a circuit layer. Ceramic-based circuit boards have better thermal conductivity than ordinary PCBs commonly used today.
[0005] One of the main components of electronic products is a chip; a chip is packaged from a wafer. The existing chip packaging process mainly uses a bonding process in which metal wires are used to weld and connect the pads on the wafer and the chip pins.
[0006] Power tubes are widely used in electronic products. Among them, MOS tubes and IGBTs are commonly used; MOS tubes are also called field-effect transistors; they have multiple uses and are mainly used as switching devices. IGBT is another type of power tube, also known as insulated gate bipolar thyristor, and is also mainly used as a switching device.
[0007] MOS tubes and IGBTs are widely used in electronic products such as frequency conversion home appliances, power supplies, motor controls, and inverters. In practical applications, MOS tubes are generally used for products with small working currents; IGBTs are used for products with large working currents. During the controlled switching process of MOS tubes and IGBTs, heat is generated, which is detrimental to the product and the components themselves.
[0008] In products, due to size, heat dissipation, and testing, a group of wafers are packaged into modules for use; however, the current module production has high investment costs; it is difficult to use thick-diameter wires that meet the large-current requirements for bonding and connecting large-current signals in the wafer. How to improve the working power of the module, reduce the cost of module production, and at the same time ensure the stability of production is the key to designing and producing modules. SUMMARY
[0009] In order to solve the above problems, the power module of the present application can improve the module efficiency by using mature technology, increase the module power by welding the metal strip to the wafer large current pad, and increase the module heat dissipation capacity by selecting the high heat conduction capacity circuit board, thereby further increasing the module working power.
[0010] To achieve the technical purpose, the present application is a power enhancement module, which comprises a circuit board frame composed of a top layer circuit layer, a base plate layer and a bottom layer circuit layer, the top layer circuit layer and the bottom layer circuit layer are both provided with two or more than two groups of pads, the two groups of pads of the top layer circuit layer and the bottom layer circuit layer are respectively corresponding to each other in pairs, and each pair of pads is connected by a through hole; further comprising an upper circuit board composed of an upper circuit board layer and an upper circuit board base plate layer, two or more than two groups of pads are arranged on the upper circuit board layer, the two or more than two groups of pads of the top layer circuit layer of the circuit board frame are welded to the corresponding pads of the group of pads on the upper circuit board layer, and the upper circuit board and the circuit board frame are welded into one body; further comprising two or more than two groups of MOS tubes or IGBT wafers, the top pads of the two or more than two groups of MOS tubes or IGBT wafers are welded to the upper circuit board layer and welded to the corresponding pads of the group of pads on the upper circuit board layer, and the bottom pads of the two or more than two groups of MOS tubes or IGBT wafers are welded and connected to the corresponding pads of the group of pads on the upper circuit board layer by a metal strip or a metal wire, and are located in the space surrounded by the circuit board frame and the upper circuit board.
[0011] As a preferred, further comprising a lower circuit board composed of a top layer circuit layer, a base plate layer and a bottom layer circuit layer, two or more than two groups of pads are arranged on the top layer circuit layer and the bottom layer circuit layer, the group of pads arranged on the bottom layer circuit layer is connected to the corresponding pads of the group of pads arranged on the top layer circuit layer through a through hole, and the group of pads of the bottom layer circuit layer of the circuit board frame is welded to the corresponding pads of the group of pads on the top layer circuit layer of the lower circuit board, thereby welding the lower circuit board and the circuit board frame into one body.
[0012] The technical scheme has the advantages of: using mature technology and PCB stack design to reduce the preparation cost of the module, increasing the conductive capacity of the module, and selecting the high heat conduction capacity circuit board to further improve the working power of the module. BRIEF DESCRIPTION OF DRAWINGS
[0013] Figure 1 The power module of the present application is a power module cross section schematic diagram.
[0014] Figure 2 Fig. 3 is a top view of the upper circuit board of the embodiment one of the present application. Fig. 4 is a schematic view.
[0015] Figure 3 Fig. 5 is a bottom view of the lower circuit board of the embodiment one of the present application.
[0016] Figure 4 Fig. 6 is a top view of the upper circuit board of the embodiment one of the present application.
[0017] Figure 5 Fig. 7 is a top view of the lower circuit board of the embodiment one of the present application.
[0018] Figure 6 Fig. 8 is a schematic view of the MOS tube part of the three-phase driving circuit of the embodiment two of the present application. DETAILED DESCRIPTION
[0019] The present application will be further described in conjunction with the accompanying drawings and specific embodiments.
[0020] As Figure 1The diagram shown is a cross-sectional view of a power module according to a specific embodiment of the present invention. It includes a circuit board frame 1, which consists of a top circuit layer 11, a substrate layer 12, and a bottom circuit layer 13. Both the top and bottom circuit layers 11 and 13 have two or more sets of pads. Each set of pads on the top and bottom circuit layers corresponds to a pair of pads on the bottom circuit layer 13, and each pair of pads is connected via vias. The circuit board also includes an upper circuit board 2, which consists of an upper circuit board layer 21 and a substrate layer 22. The upper circuit board layer 21 has two or more sets of pads. The two or more sets of pads on the top circuit layer 11 are soldered to corresponding pads on the upper circuit board layer 21, thus soldering the upper circuit board 2 and the circuit board frame 1 together. Finally, the circuit board also includes a set of MOSFET wafers 3, with the top surface pads of the MOSFET wafers 3 soldered to... On the upper circuit board circuit layer 21, corresponding pads of a set of pads on the upper circuit board circuit layer 21 are soldered. A set of bottom pads of the MOS transistor wafer 3 are soldered to corresponding pads of a set of pads on the upper circuit board circuit layer 21 through metal strips or metal wires, and are located in the space enclosed by the circuit board frame 1 and the upper circuit board 2. It also includes a lower circuit board 5, which is composed of a lower circuit board top circuit layer 51, a lower circuit board substrate layer 52 and a lower circuit board bottom circuit layer 53. On the lower circuit board top circuit layer 51 and the lower circuit board bottom circuit layer 53, there are two or more sets of pads. A set of pads on the lower circuit board bottom circuit layer 53 is connected to the corresponding pads of a set of pads on the lower circuit board top circuit layer 51 through through holes. A set of pads on the circuit board frame bottom circuit layer 13 is soldered to the corresponding pads of a set of pads on the lower circuit board top circuit layer 51, so that the lower circuit board 5 and the circuit board frame 1 are soldered together.
[0021] like Figure 2 The image shown is a top view of a specific embodiment of the present invention with the upper circuit board removed. Schematic diagram. A set of pads 111-116 are arranged on the top layer 11 of the circuit board frame 1. These pads have through-holes that are electrically connected to corresponding pads in a set of pads on the bottom layer 13 of the circuit board frame. MOSFET wafers 31 and 32 are located within the space enclosed by the circuit board frame 1 and the lower circuit board 5. Their top drain pads 311 and 321 are soldered to corresponding pads on the upper circuit board's circuit layer 21. The upper circuit board can be a ceramic substrate circuit board to increase heat dissipation and thus increase the module's operating power.
[0022] like Figure 3The diagram shown is a bottom view of a specific embodiment with the lower circuit board removed. A set of pads 131-136 are arranged on the bottom circuit layer 13 of the circuit board frame 1. The pads are equipped with through holes, which are electrically connected to the corresponding pads in a set of pads on the top circuit layer 11 of the circuit board frame. Wafers 31 and 32 are located in the space enclosed by the circuit board frame 1 and the upper circuit board 2. The bottom surface of wafer 31 is provided with source pads 312 and gate pads 313. The source pads 312 are soldered to pads 219 on the circuit layer 21 of the upper circuit board through metal strips 41, and the gate pads 313 are soldered to pads 221 on the circuit layer 21 of the upper circuit board through metal lines 43. The bottom surface of wafer 32 is provided with source pads 322 and gate pads 323. The source pads 322 are soldered to pads 220 on the circuit layer 21 of the upper circuit board through metal strips 42, and the gate pads 323 are soldered to pads 222 on the circuit layer 21 of the upper circuit board through metal lines 44.
[0023] like Figure 4 The diagram shows the bottom surface of the upper circuit board in a specific embodiment. On the circuit layer 21 of the upper circuit board 2, a set of pads 211-222 are arranged. Pads 211-216 are correspondingly soldered to pads 111-116 of the top circuit layer 11 of the circuit board frame 1. Pads 217 and 218 are correspondingly soldered to the top drain pads 312 and 322 of wafers 31 and 32. Pads 219 and 220 are connected to the bottom source pads 312 and 322 of wafers 31 and 32 via metal strips. Pads 221 and 222 are correspondingly soldered to the bottom gate pads 313 and 323 of wafers 31 and 32 via metal lines.
[0024] like Figure 5 The diagram shown is a top-level schematic of the lower circuit board in a specific embodiment. A set of pads 511-516 is provided on the top-level circuit layer 51 of the lower circuit board, which are correspondingly soldered to a set of pads 131-136 provided on the bottom-level circuit layer 13 of the circuit board frame 1.
[0025] like Figure 6 The diagram shown is a reference circuit diagram of the MOS transistor portion of the three-phase drive circuit according to Embodiment 2 of the present invention. The module comprises a set of six MOS transistors on a wafer; it is widely used in motor drive circuits and applied in frequency converters.
[0026] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any minor modifications, equivalent substitutions, and improvements made to the above embodiments based on the technical essence of the present invention should be included within the protection scope of the present invention.
Claims
1. A power enhancement module, characterized in that: The system includes a circuit board frame, which consists of a top circuit board frame layer, a base circuit board frame layer, and a bottom circuit board frame layer. Both the top and bottom circuit board frames have two or more sets of pads, with each set of pads corresponding to the previous one on the top layer and the previous one on the bottom layer, connected by vias. The system also includes an upper circuit board, which consists of an upper circuit board frame layer and an upper circuit board base layer. The upper circuit board frame layer has two or more sets of pads, which are connected to the base circuit board frame layer. The upper circuit board and the circuit board frame are soldered together by corresponding pads in a set of pads on the circuit board layer. It also includes two or more sets of MOSFETs or IGBT wafers. The top pads of the two or more sets of MOSFETs or IGBT wafers are soldered to the circuit board layer of the upper circuit board and to the corresponding pads in a set of pads on the circuit board layer of the upper circuit board. The bottom pads of the two or more sets of MOSFETs or IGBT wafers are connected to the corresponding pads in a set of pads on the circuit board layer of the upper circuit board by metal strips or metal wires. They are located in the space enclosed by the circuit board frame and the upper circuit board.
2. The power enhancement module according to claim 1, characterized in that: The lower circuit board consists of a top circuit layer, a substrate layer, and a bottom circuit layer. Two or more pads are arranged on both the top and bottom circuit layers. The pads on the bottom circuit layer are connected to the corresponding pads on the top circuit layer via vias. The pads on the bottom circuit layer are soldered to the corresponding pads on the top circuit layer, thus bonding the lower circuit board and the circuit board frame together.