Silicon-based OLED heat dissipation structure and preparation method thereof

Abstract

The invention provides a silicon-based OLED heat dissipation structure and a preparation method thereof. The silicon-based OLED heat dissipation structure comprises a silicon-based OLED device, and the silicon-based OLED device comprises a silicon wafer, an OLED light-emitting layer, a color filter layer and a lens layer which are stacked from bottom to top; and the heat-conducting phase-change material is arranged at at least one interface of the silicon-based OLED device and is used for absorbing heat generated by the silicon-based OLED device during working or releasing heat. The heat dissipation performance of the silicon-based OLED device is effectively improved by utilizing the property of the heat-conducting phase-change material, the brightness change condition of the device caused by temperature change is solved, and the brightness consistency, the display uniformity and the product yield of the device are fully guaranteed; according to the scheme, stable work of the device is guaranteed on the premise that brightness and optical performance are not sacrificed, the difficulty and the requirement for temperature control of a device chip are reduced, the service life of the device is prolonged, the product yield is improved, and the cost is reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of OLED heat dissipation, and particularly relates to a silicon-based OLED heat dissipation structure and a preparation method thereof. BACKGROUND

[0002] The silicon-based OLED display device is widely applied to the high-resolution display field due to its advantages of high brightness, rich color, low driving voltage, fast response speed and low power consumption. In order to meet the application requirement of high brightness, the industry generally adopts a Tandem (series) device structure, which improves the light-emitting efficiency and brightness by stacking a plurality of light-emitting units in series. However, with the significant increase of brightness, the heat generated by the device work increases sharply, which leads to the increase of chip temperature, local overheating, and further causes the problems of brightness attenuation, color drift, and reliability reduction.

[0003] At present, in order to alleviate the temperature rise problem, the industry generally actively reduces the brightness by adjusting the Vcom voltage in the driving circuit, so as to control the heat generation. However, this method significantly increases the complexity of chip design, leads to the increase of production cost, the reduction of yield and the reduction of product reliability.

[0004] Therefore, how to effectively manage the temperature change of the silicon-based OLED device, improve the heat dissipation performance, and thus guarantee the brightness consistency, display uniformity and product yield of the device is a technical problem to be solved. SUMMARY

[0005] In view of the deficiencies of the prior art, the purpose of the present application is to provide a silicon-based OLED heat dissipation structure and a preparation method thereof. The present application sets a heat-conducting phase change material at at least one interface of the silicon-based OLED device, utilizes the property of the heat-conducting phase change material that absorbs or releases heat when it changes phase with temperature change, thereby actively absorbs or releases the heat generated by the silicon-based OLED device during work, effectively improves the heat dissipation performance of the silicon-based OLED device, solves the brightness change caused by the temperature change of the device, and fully guarantees the brightness consistency, display uniformity and product yield of the device. In summary, the scheme not only guarantees the stable work of the device without sacrificing the brightness and optical performance, but also reduces the difficulty and requirement of temperature control of the device chip, prolongs the service life of the device, helps to improve the product yield and reduce the cost, and provides an effective solution for the practical application of high-brightness silicon-based OLED devices.

[0006] In order to achieve the purpose of the present application, the following technical scheme is adopted: In a first aspect, the present application provides a silicon-based OLED heat dissipation structure, which comprises: a silicon-based OLED device, the silicon-based OLED device comprising a silicon wafer, an OLED light-emitting layer, a color filter layer and a lens layer stacked from bottom to top.

[0007] a thermally conductive phase change material disposed at at least one interface of the silicon-based OLED device for absorbing or releasing heat generated by the silicon-based OLED device during operation.

[0008] The present application actively absorbs or releases heat generated by the silicon-based OLED device during operation by disposing a thermally conductive phase change material at at least one interface of the silicon-based OLED device, taking advantage of the property of the thermally conductive phase change material that absorbs or releases heat when it undergoes a phase change with temperature change, thereby effectively improving the heat dissipation performance of the silicon-based OLED device, solving the problem of brightness change caused by temperature change, and fully ensuring the brightness consistency, display uniformity and product yield of the device. In summary, this scheme not only ensures the stable operation of the device without sacrificing brightness and optical performance, but also reduces the difficulty and requirement of temperature control of the device chip, prolongs the service life of the device, helps to improve the product yield and reduce the cost, and provides an effective solution for the practical application of high-brightness silicon-based OLED devices.

[0009] It should be noted that the thermally conductive phase change material will release and absorb heat when it undergoes a phase change. The present application takes advantage of this change rule to cool and heat the silicon-based OLED device. For example, when the thermally conductive phase change material is inorganic hydrated salt (such as sodium carbonate decahydrate), the hydrated salt will undergo a decomposition reaction when the temperature reaches the phase change point, changing from inorganic hydrated salt to anhydrous salt and water (such as sodium carbonate and water). This process is an endothermic process, so the phase change decomposition process of the hydrated salt will absorb heat. When the temperature drops to a certain extent, the anhydrous salt and water will undergo a hydration reaction to form inorganic hydrated salt. This process is an exothermic process, so the hydration reaction of the hydrated salt will release heat. Based on this, when used in a silicon-based OLED device, the thermally conductive phase change material undergoes a phase change and an endothermic process when the brightness of the device increases, thereby achieving a heat dissipation effect on the product. When the device is at low temperature, the thermally conductive phase change material undergoes a hydration reaction and an exothermic process, thereby increasing the temperature of the product to some extent and improving the brightness of the product. Therefore, the device can be recycled, prolonging the service life of the device.

[0010] It should be noted that the color filter layer is also referred to as "CF layer".

[0011] Preferably, the interface includes any one or a combination of at least two of an external interface of the silicon-based OLED device, an interlayer interface in the silicon-based OLED device, or an internal position of a layer in the silicon-based OLED device.

[0012] Preferably, the heat-conducting phase change material comprises inorganic hydrated salt and / or organic phase change material; wherein the inorganic hydrated salt comprises sodium carbonate decahydrate and / or sodium sulfate decahydrate; the organic phase change material comprises any one or a combination of paraffin, butyl stearate or polyethylene glycol.

[0013] Preferably, when the heat-conducting phase change material is arranged at the external interface of the silicon-based OLED device, the heat-conducting phase change material is arranged in the form of polymer coating, and at least one of the following conditions is met: The heat-conducting phase change material is arranged at the back of the silicon wafer to form a back heat dissipation layer.

[0014] The heat-conducting phase change material is arranged above the lens layer to form a front heat dissipation top layer.

[0015] It should be noted that the purpose of polymer coating is to encapsulate the heat-conducting phase change material in the polymer to form a stable heat dissipation material. For example, the polymer can be polyvinyl chloride or the like.

[0016] In the present application, if the heat-conducting phase change material is arranged at the back of the silicon wafer to form a back heat dissipation layer, this spatial position enables it to be in close contact with the silicon wafer directly, thereby absorbing and dissipating the heat generated in the core area of the chip with the shortest path and highest efficiency. If the heat-conducting phase change material is arranged above the lens layer to form a front heat dissipation top layer, this spatial position enables it to construct a heat dissipation channel on the light-emitting side of the device without affecting the light path and display function, which not only reduces the overall temperature of the device, but also helps to balance the temperature gradient between the front and back, and reduces thermal stress.

[0017] Preferably, the front heat dissipation top layer covers the lens layer, and the outer surface of the front heat dissipation top layer is a horizontal plane.

[0018] Preferably, when the heat-conducting phase change material is arranged at the interlayer interface in the silicon-based OLED device, the heat-conducting phase change material is arranged in the form of polymer coating, and at least one of the following conditions is met: The heat-conducting phase change material is arranged between the OLED light-emitting layer and the color filter layer to form a front heat dissipation bottom layer.

[0019] The heat-conducting phase change material is arranged between the color filter layer and the lens layer to form a front heat dissipation middle layer.

[0020] For example, the polymer can be polyvinyl chloride or the like.

[0021] In the present application, if the heat-conducting phase change material is arranged between the OLED light-emitting layer and the color filter layer to form a front heat dissipation bottom layer, the space position enables the heat-conducting phase change material to be in direct contact with the OLED light-emitting layer, so that the heat generated by light emission can be captured and absorbed in the first time and in the shortest path, the vertical diffusion of heat to the color filter layer and the lens layer is greatly inhibited, the temperature rise of the functional area of the device is reduced from the root, and the light-emitting efficiency and color stability are crucially important; if the heat-conducting phase change material is arranged between the color filter layer and the lens layer to form a front heat dissipation intermediate layer, the space position not only can continue to absorb the residual heat conducted by the color filter layer, but also can effectively isolate the external environmental heat disturbance possibly introduced by the lens layer; at the same time, the influence on the light extraction efficiency and the display optical performance can be reduced.

[0022] Preferably, the lens layer is a microlens array layer, and the microlens array layer has a plurality of microlens units arranged in one-to-one correspondence with the pixel units of the color filter layer. For example, the pixel units of the color filter layer can be red filter units (R), green filter units (G) and blue filter units (B) arranged in sequence.

[0023] When the heat-conducting phase change material is arranged in the internal position of the layers in the silicon-based OLED device, the heat-conducting phase change material is arranged in at least one of the microlens units. For example, the heat-conducting phase change material can be arranged in 1, 2 or 3 microlens units.

[0024] In the present application, if the heat-conducting phase change material is arranged in the microlens unit, the refractive index of the material changes when the temperature changes, which causes changes in light extraction and further causes changes in brightness of the product. For example, if the heat-conducting phase change material Na2CO3·10H2O is selected, the refractive index of Na2CO3·10H2O is about 1.655, and the refractive index of the sodium carbonate aqueous solution obtained after phase change (heat absorption process) is between 1.33 and 1.4. When the device works at a temperature of 25-30°C, Na2CO3·10H2O with high refractive index has higher brightness, and as the temperature gradually rises after a long time of work, Na2CO3·10H2O changes phase to become a sodium carbonate aqueous solution, the refractive index of which decreases, finally causing the brightness to decrease, and further stabilizing the consistency and stability of the brightness with temperature changes. At the same time, as the temperature of the device rises, the hydration of the salt will further absorb heat, which can absorb part of the heat generated by the product, and further improve the brightness due to the temperature rise of the product. Similarly, when the device works from room temperature (25-30°C) to low temperature (for example, 10°C), the sodium carbonate aqueous solution will release part of the heat due to the hydration reaction caused by the decrease in temperature, and the high refractive index of the synthesized Na2CO3·10H2O will further affect the lens layer to improve the brightness of the device, so as to ensure the consistency of the brightness of the product with temperature fluctuations.

[0025] Preferably, the thickness of the back heat dissipation layer is 1-100 μm, for example, it can be 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, etc.

[0026] Preferably, the thickness of the front heat dissipation bottom layer is 1-100 μm, for example, it can be 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, etc.

[0027] Preferably, the thickness of the front heat dissipation middle layer is 0.1-2 μm, for example, it can be 0.1 μm, 0.5 μm, 1 μm, 1.5 μm or 2 μm, etc.

[0028] Preferably, the mass content of the heat-conducting phase change material in the back heat dissipation layer is 80-99%, for example, it can be 80%, 85%, 90%, 95% or 99%, etc.

[0029] Preferably, the mass content of the heat-conducting phase change material in the front heat dissipation top layer is 80-99%, for example, it can be 80%, 85%, 90%, 95% or 99%, etc.

[0030] Preferably, the mass content of the heat-conducting phase change material in the front heat dissipation bottom layer is 80-99%, for example, it can be 80%, 85%, 90%, 95% or 99%, etc.

[0031] Preferably, the mass content of the heat-conducting phase change material in the front heat dissipation middle layer is 80-99%, for example, it can be 80%, 85%, 90%, 95% or 99%, etc.

[0032] Preferably, the mass content of the heat-conducting phase change material in the microlens array layer is 80-99%, for example, it can be 80%, 85%, 90%, 95% or 99%, etc.

[0033] Preferably, the lens layer is a Lens glue layer. It should be noted that "Lens glue" as an optical lens glue is a kind of functional optical glue specially used for forming a lens layer in a silicon-based OLED device, which belongs to a high-transmittance optical resin glue.

[0034] Preferably, a patch glue layer is further arranged between the silicon wafer and the OLED light-emitting layer, and the heat-conducting phase change material is arranged in the patch glue layer.

[0035] In a second aspect, the present application provides a preparation method of the silicon-based OLED heat dissipation structure according to the first aspect, which comprises the following steps: The application provides a silicon-based OLED device, which comprises, from bottom to top, a laminated silicon wafer, an OLED light-emitting layer, a color filter layer and a lens layer.

[0036] At at least one interface of the silicon-based OLED device, a heat-conducting phase change material is applied to absorb or release heat generated by the silicon-based OLED device during operation.

[0037] Preferably, when the interface is an external interface of the silicon-based OLED device, the heat-conducting phase change material is applied in the form of a polymer coating to form a heat dissipation layer by any one or a combination of at least two of the following methods: coating, hot pressing or injection molding.

[0038] Preferably, when the interface is an interlayer interface in the silicon-based OLED device, the heat-conducting phase change material is applied in the form of a polymer coating to form a heat dissipation layer by any one or a combination of at least two of the following methods: coating, hot pressing or injection molding.

[0039] Preferably, when the interface is an internal position in the layer of the silicon-based OLED device, the heat-conducting phase change material is applied by a premixing method. For example, the heat-conducting phase change material and the raw materials for preparing the lens layer are premixed, and then applied on the color filter layer.

[0040] The numerical range of the application includes not only the point values listed above, but also any point values between the above numerical ranges that are not listed. Due to the limited space and for the sake of simplicity, the application does not list the specific point values included in the range.

[0041] Compared with the prior art, the application has the following beneficial effects: By arranging the heat-conducting phase change material at at least one interface of the silicon-based OLED device, the application utilizes the heat absorption or release property of the heat-conducting phase change material that changes phase with temperature, thereby actively absorbing or releasing the heat generated by the silicon-based OLED device during operation. The application effectively improves the heat dissipation performance of the silicon-based OLED device, solves the brightness change caused by temperature change, and fully guarantees the brightness consistency, display uniformity and product yield of the device. In summary, the application not only guarantees the stable operation of the device without sacrificing brightness and optical performance, but also reduces the difficulty and requirement of temperature control of the device chip, prolongs the service life of the device, helps to improve the product yield and reduce the cost, provides an effective solution for the practical application of high-brightness silicon-based OLED devices. BRIEF DESCRIPTION OF DRAWINGS

[0042] Figure 1 The application provides a silicon-based OLED heat dissipation structure for example 1.

[0043] Figure 2 Structure diagram of the silicon-based OLED heat dissipation structure provided in Example 2 of the present application.

[0044] Figure 3 Structure diagram of the silicon-based OLED heat dissipation structure provided in Example 3 of the present application.

[0045] Figure 4 Structure diagram of the silicon-based OLED heat dissipation structure provided in Example 4 of the present application.

[0046] Figure 5 Structure diagram of the silicon-based OLED heat dissipation structure provided in Example 5 of the present application.

[0047] Wherein, 1-silicon wafer; 2-OLED light-emitting layer; 3-color filter layer; 4-lens layer; 5-thermally conductive phase change material; 6-back heat dissipation layer; 7-front heat dissipation bottom layer; 8-front heat dissipation top layer. DETAILED DESCRIPTION

[0048] The technical solutions of the present application will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments are only to help understand the present application and should not be regarded as specific limitations of the present application.

[0049] It should be understood that, in the description of the present application, the orientations or positional relationships indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and the like are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first", "second", and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0050] It should be noted that, in the description of the present application, unless otherwise explicitly specified and limited, the terms "provided", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood through specific circumstances.

[0051] Embodiment 1 The embodiment provides a silicon-based OLED heat dissipation structure, a structure diagram of which is shown in the figure. Figure 1 The silicon-based OLED heat dissipation structure comprises: A silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer 1, an OLED light-emitting layer 2, a color filter layer 3 and a lens layer 4; the lens layer 4 is a microlens array layer, and the microlens array layer has a plurality of microlens units arranged in one-to-one correspondence with pixel units of the color filter layer 3; the pixel units of the color filter layer 3 comprise, in sequence, red filter units (abbreviated as R), green filter units (abbreviated as G) and blue filter units (abbreviated as B); and the lens layer 4 is a Lens glue layer.

[0052] A heat-conducting phase change material 5, which is arranged on the back surface of the silicon wafer 1 in the form of polymer coating to form a back surface heat dissipation layer 6, and is used for absorbing or releasing heat generated during the operation of the silicon-based OLED device.

[0053] In the embodiment, the heat-conducting phase change material 5 is sodium carbonate decahydrate; the polymer is polyvinyl chloride; the thickness of the back surface heat dissipation layer 6 is 50 μm; and the mass content of the heat-conducting phase change material 5 in the back surface heat dissipation layer 6 is 90%.

[0054] The embodiment further provides a preparation method of the silicon-based OLED heat dissipation structure, and the preparation method comprises the following steps: (1) providing a silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer, an OLED light-emitting layer, a color filter layer and a lens layer.

[0055] (2) mixing sodium carbonate decahydrate and polyvinyl chloride to obtain polyvinyl chloride-coated sodium carbonate decahydrate as a heat dissipation material; coating the heat dissipation material on the entire back surface of the silicon wafer, and then performing solidification treatment to obtain a back surface heat dissipation layer.

[0056] Embodiment 2 The embodiment provides a silicon-based OLED heat dissipation structure, a structure diagram of which is shown in the figure. Figure 2 The silicon-based OLED heat dissipation structure comprises: A silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer 1, an OLED light-emitting layer 2, a color filter layer 3, and a lens layer 4; the lens layer 4 is a microlens array layer, which has a plurality of microlens units arranged one-to-one corresponding to the pixel units of the color filter layer 3; the pixel units of the color filter layer 3 comprise, in sequence, red filter units (abbreviated as R), green filter units (abbreviated as G), and blue filter units (abbreviated as B); the lens layer 4 is a lens glue layer.

[0057] A thermally conductive phase change material 5, which is arranged in each of the microlens units, for absorbing or releasing heat generated during the operation of the silicon-based OLED device.

[0058] In the present embodiment, the thermally conductive phase change material 5 is sodium carbonate decahydrate; the polymer is polyvinyl chloride; and the mass content of the thermally conductive phase change material 5 in the microlens array layer is 8%.

[0059] The present embodiment also provides a preparation method of the above-mentioned silicon-based OLED heat dissipation structure, which comprises the following steps: Providing a silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer, an OLED light-emitting layer, a color filter layer, and a lens layer.

[0060] In the present embodiment, the preparation method of the lens layer comprises: Mixing sodium carbonate decahydrate and lens glue, and then coating the mixture on the color filter layer to obtain the lens layer doped with the thermally conductive phase change material.

[0061] Embodiment 3 The present embodiment provides a silicon-based OLED heat dissipation structure, a structural schematic diagram of which is shown in Figure 3 The silicon-based OLED heat dissipation structure comprises: A silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer 1, an OLED light-emitting layer 2, a color filter layer 3, and a lens layer 4; the lens layer 4 is a microlens array layer, which has a plurality of microlens units arranged one-to-one corresponding to the pixel units of the color filter layer 3; the pixel units of the color filter layer 3 comprise, in sequence, red filter units (abbreviated as R), green filter units (abbreviated as G), and blue filter units (abbreviated as B); the lens layer 4 is a lens glue layer.

[0062] A thermally conductive phase change material 5, which is arranged in the form of a polymer coating between the OLED light-emitting layer 2 and the color filter layer 3, forms a front heat dissipation bottom layer 7, and is used for absorbing or releasing heat generated during the operation of the silicon-based OLED device.

[0063] The heat-conducting phase change material 5 is sodium carbonate decahydrate; the polymer is polyvinyl chloride; the thickness of the front heat dissipation bottom layer 7 is 50 μm; and the mass content of the heat-conducting phase change material 5 in the front heat dissipation bottom layer 7 is 90%.

[0064] The embodiment also provides a preparation method of the above-mentioned silicon-based OLED heat dissipation structure, which comprises the following steps: A silicon-based OLED device is provided, which comprises, from bottom to top, a silicon wafer, an OLED light-emitting layer, a front heat dissipation bottom layer, a color filter layer, and a lens layer.

[0065] The preparation method of the front heat dissipation bottom layer comprises: Sodium carbonate decahydrate and polyvinyl chloride are mixed to obtain polyvinyl chloride-coated sodium carbonate decahydrate as a heat dissipation material; the heat dissipation material is coated on the OLED light-emitting layer, and then solidification treatment is performed to obtain the front heat dissipation bottom layer.

[0066] Embodiment 4 The embodiment provides a silicon-based OLED heat dissipation structure, a structure diagram of which is shown in Figure 4 The silicon-based OLED heat dissipation structure comprises: A silicon-based OLED device, which comprises, from bottom to top, a silicon wafer 1, an OLED light-emitting layer 2, a color filter layer 3, and a lens layer 4; the lens layer 4 is a microlens array layer, which has a plurality of microlens units arranged in one-to-one correspondence with pixel units of the color filter layer 3; the pixel units of the color filter layer 3 comprise red filter units (R), green filter units (G), and blue filter units (B) arranged in sequence; and the lens layer 4 is a Lens glue layer.

[0067] A heat-conducting phase change material 5, which is arranged above the lens layer 4 in the form of a polymer coating to form a front heat dissipation top layer 8 for absorbing or releasing heat generated during operation of the silicon-based OLED device.

[0068] The heat-conducting phase change material 5 is sodium carbonate decahydrate; the polymer is polyvinyl chloride; and the mass content of the heat-conducting phase change material 5 in the front heat dissipation top layer 8 is 90%.

[0069] The embodiment also provides a preparation method of the above-mentioned silicon-based OLED heat dissipation structure, which comprises the following steps: (1) A silicon-based OLED device is provided, which comprises, from bottom to top, a silicon wafer, an OLED light-emitting layer, a color filter layer, and a lens layer.

[0070] (2) mixing sodium carbonate decahydrate and polyvinyl chloride to obtain polyvinyl chloride coated sodium carbonate decahydrate as a heat dissipation material; coating the heat dissipation material on the surface of the lens layer, and then performing a curing treatment to obtain a front heat dissipation top layer.

[0071] Embodiment 5 The embodiment provides a silicon-based OLED heat dissipation structure, a structure diagram of which is shown in FIG. 1. Figure 5 The silicon-based OLED heat dissipation structure comprises: a silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer 1, an OLED light-emitting layer 2, a color filter layer 3, and a lens layer 4; the lens layer 4 is a microlens array layer, which has a plurality of microlens units arranged in one-to-one correspondence with pixel units of the color filter layer 3; the pixel units of the color filter layer 3 comprise, in sequence, red filter units (abbreviated as R), green filter units (abbreviated as G), and blue filter units (abbreviated as B); the lens layer 4 is a lens glue layer.

[0072] a heat-conducting phase change material 5, which is arranged on the back surface of the silicon wafer 1 in the form of polymer coating to form a back heat dissipation layer 6, and is also arranged in each of the microlens units; the heat-conducting phase change material 5 is used to absorb or release heat generated during operation of the silicon-based OLED device.

[0073] The heat-conducting phase change material 5 is sodium carbonate decahydrate; the polymer is polyvinyl chloride; the thickness of the back heat dissipation layer 6 is 50 μm; in the back heat dissipation layer 6, the mass content of the heat-conducting phase change material 5 is 90%; in the lens layer 4, the mass content of the heat-conducting phase change material 5 is 8%.

[0074] The embodiment also provides a preparation method of the silicon-based OLED heat dissipation structure, which comprises the following steps: (1) providing a silicon-based OLED device, which comprises, from bottom to top, a stacked silicon wafer, an OLED light-emitting layer, a color filter layer, and a lens layer.

[0075] The preparation method of the lens layer comprises: mixing sodium carbonate decahydrate and lens glue, and then coating the mixture on the color filter layer to obtain the lens layer into which the heat-conducting phase change material is incorporated.

[0076] (2) mixing sodium carbonate decahydrate and polyvinyl chloride to obtain polyvinyl chloride coated sodium carbonate decahydrate as a heat dissipation material; coating the heat dissipation material on the entire back surface of the silicon wafer, and then performing a curing treatment to obtain a back heat dissipation layer.

[0077] Embodiment 6 The difference between the embodiment and embodiment 1 is that a patch adhesive layer is further arranged between the silicon wafer and the OLED light-emitting layer, and the patch adhesive layer is arranged with the heat-conducting phase change material.

[0078] The remaining methods and parameters are consistent with those of embodiment 1.

[0079] Embodiment 7 The difference between the embodiment and embodiment 2 is that the mass content of the heat-conducting phase change material in the microlens array layer is 15%.

[0080] The remaining methods and parameters are consistent with those of embodiment 2.

[0081] Embodiment 8 The difference between the embodiment and embodiment 3 is that the thickness of the front surface heat dissipation bottom layer is 120 μm.

[0082] The remaining methods and parameters are consistent with those of embodiment 3.

[0083] Comparative Example 1 The difference between the comparative example and embodiment 1 is that no back surface heat dissipation layer is arranged.

[0084] The remaining methods and parameters are consistent with those of embodiment 1.

[0085] Analysis: From embodiments 1-5, it can be seen that by arranging the heat-conducting phase change material at at least one interface of the silicon-based OLED device, the heat-conducting phase change material is used to actively absorb or release heat generated by the silicon-based OLED device during operation by using the property of the heat-conducting phase change material that changes phase to absorb or release heat with temperature changes, thereby effectively improving the heat dissipation performance of the silicon-based OLED device, solving the brightness change caused by temperature changes of the device, fully guaranteeing the brightness consistency, display uniformity and product yield of the device, and improving the brightness consistency to more than 95%, and the product yield to more than 92%.

[0086] From embodiments 1 and 6, it can be seen that arranging the heat-conducting phase change material in the patch adhesive layer is beneficial to further optimizing the heat transfer path from the heat source to the heat dissipation unit, and has a positive effect on reducing the core temperature of the device and improving the heat response speed.

[0087] From embodiments 1 and 7, it can be seen that if the mass content of the heat-conducting phase change material in the microlens array layer is too high, it may affect the optical uniformity and light transmittance of the Lens adhesive layer, resulting in a decrease in the forming precision of the microlens, a decrease in the light extraction efficiency, and even causing glare or color shift.

[0088] From Example 1 and Example 8, if the thickness of the front heat dissipation layer is too thick, the effective heat transfer efficiency of the heat conductive phase change material can be weakened due to its own thermal resistance, resulting in local heat accumulation, which cannot be fully and quickly absorbed by the phase change material, and is not conducive to achieving fast and uniform heat management.

[0089] From Example 1 and Comparative Example 1, if the back heat dissipation layer is not provided, the device operating temperature is significantly increased, resulting in increased brightness non-uniformity, obvious color distortion, and increased product failure rate. It should be noted that the present application is illustrated by the above examples, but the present application is not limited to the above process steps, i.e. it does not mean that the present application must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvement on the present application, equivalent replacement of the materials selected by the present application, addition of auxiliary ingredients, selection of specific methods, etc. fall within the scope of protection and disclosure of the present application.

Claims

1. A silicon-based OLED heat dissipation structure, characterized in that, The silicon-based OLED heat dissipation structure includes: A silicon-based OLED device, comprising, from bottom to top, a stacked silicon wafer, an OLED light-emitting layer, a color filter layer, and a lens layer; A thermally conductive phase change material is disposed at at least one interface of the silicon-based OLED device for absorbing or releasing heat generated during operation of the silicon-based OLED device.

2. The silicon-based OLED heat dissipation structure according to claim 1, characterized in that, The interface includes any one or a combination of at least two of the following: the external interface of the silicon-based OLED device, the interlayer interface in the silicon-based OLED device, or the internal layer location in the silicon-based OLED device. And / or, the thermally conductive phase change material includes inorganic hydrated salts and / or organic phase change materials; wherein, the inorganic hydrated salt includes sodium carbonate decahydrate and / or sodium sulfate decahydrate; and the organic phase change material includes any one or a combination of at least two of paraffin, butyl stearate, or polyethylene glycol.

3. The silicon-based OLED heat dissipation structure according to claim 2, characterized in that, When the thermally conductive phase change material is disposed at the external interface of the silicon-based OLED device, the thermally conductive phase change material is disposed in the form of polymer coating and satisfies at least one of the following conditions: The thermally conductive phase change material is disposed on the back side of the silicon wafer to form a back heat dissipation layer; The thermally conductive phase change material is disposed above the lens layer to form a front heat dissipation top layer.

4. The silicon-based OLED heat dissipation structure according to claim 2, characterized in that, When the thermally conductive phase change material is disposed at the interlayer interface in the silicon-based OLED device, the thermally conductive phase change material is disposed in the form of polymer coating and satisfies at least one of the following conditions: The thermally conductive phase change material is disposed between the OLED light-emitting layer and the color filter layer to form a front heat dissipation bottom layer; The thermally conductive phase change material is disposed between the color filter layer and the lens layer to form a front-side heat dissipation intermediate layer.

5. The silicon-based OLED heat dissipation structure according to claim 2, characterized in that, The lens layer is a microlens array layer, which has a plurality of microlens units arranged in a one-to-one correspondence with the pixel units of the color filter layer. When the thermally conductive phase change material is disposed within a layer in the silicon-based OLED device, the thermally conductive phase change material is disposed in at least one of the microlens units.

6. The silicon-based OLED heat dissipation structure according to any one of claims 3-5, characterized in that, The thickness of the back heat dissipation layer is 1-100μm; And / or, the thickness of the front heat dissipation substrate is 1-100μm; And / or, the thickness of the front heat dissipation intermediate layer is 0.1-2μm.

7. The silicon-based OLED heat dissipation structure according to any one of claims 3-6, characterized in that, In the back heat dissipation layer, the mass content of thermally conductive phase change material is 80-99%; And / or, in the front heat dissipation top layer, the mass content of thermally conductive phase change material is 80-99%; And / or, in the front heat dissipation bottom layer, the mass content of thermally conductive phase change material is 80-99%; And / or, in the front heat dissipation intermediate layer, the mass content of thermally conductive phase change material is 80-99%; And / or, in the microlens array layer, the mass content of thermally conductive phase change material is 5-10%.

8. The silicon-based OLED heat dissipation structure according to any one of claims 1-7, characterized in that, A patch adhesive layer is also provided between the silicon wafer and the OLED light-emitting layer, and the thermally conductive phase change material is disposed in the patch adhesive layer.

9. A method for fabricating a silicon-based OLED heat dissipation structure as described in any one of claims 1-8, characterized in that, The preparation method includes the following steps: A silicon-based OLED device substrate is provided, wherein the silicon-based OLED substrate comprises, from bottom to top, stacked silicon wafers and an OLED light-emitting layer, a color filter layer and a lens layer; At at least one interface of the silicon-based OLED device, a thermally conductive phase change material is applied to absorb or release the heat generated during operation of the silicon-based OLED device.

10. The preparation method according to claim 9, characterized in that, When the interface is the external interface of the silicon-based OLED device, the thermally conductive phase change material is applied as a heat dissipation layer in the form of polymer coating, and the application method includes any one or a combination of at least two of the following: coating method, hot pressing method, or injection molding method. And / or, when the interface is an interlayer interface in the silicon-based OLED device, the thermally conductive phase change material is applied as a heat dissipation layer in the form of polymer coating, and the application method is any one or a combination of at least two of coating, hot pressing or injection molding. And / or, when the interface is located within a layer in the silicon-based OLED device, the method for applying the thermally conductive phase change material includes a premixing method.

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