Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing apparatus capable of efficiently processing a substrate with a chemical solution. A substrate processing method according to one embodiment of the present disclosure includes a holding step, an immersion step, a pressurization step, and an irradiation step. In the holding step, a substrate having a resist film on the surface is horizontally held in a processing space that can be sealed. In the immersion step, a chemical solution is supplied into the processing space and the substrate is immersed in the chemical solution. In the pressurizing step, the inside of the processing space is pressurized to an air pressure higher than atmospheric pressure. In the irradiation step, the substrate in the chemical solution is irradiated with light having a wavelength of 350-600 nm.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing method and a substrate processing apparatus. Background Technology

[0002] Previously, a technique for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) using ozone water was known. For example, this ozone water treatment can remove the resist film formed on the substrate (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-190445 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for efficiently processing substrates using a chemical solution.

[0008] Solution for solving the problem

[0009] One embodiment of the substrate processing method of the present invention includes a holding step, an immersion step, a pressurizing step, and an irradiation step. In the holding step, a substrate having a resist film on its surface is held horizontally within a sealable processing space. In the immersion step, a chemical solution is supplied to the processing space and the substrate is immersed in the chemical solution. In the pressurizing step, the processing space is pressurized to a pressure higher than atmospheric pressure. In the irradiation step, the substrate in the chemical solution is irradiated with light of a wavelength of 350 nm to 600 nm.

[0010] The effects of the invention

[0011] According to this disclosure, substrates can be efficiently treated using a chemical solution. Furthermore, the effects described herein are not necessarily limiting and may be any of the effects described in this disclosure. Attached Figure Description

[0012] Figure 1 This is a schematic diagram showing the general structure of the substrate processing system involved in the embodiment.

[0013] Figure 2 This is a schematic top view showing a specific structural example of the processing unit involved in the embodiment.

[0014] Figure 3 This is a schematic cross-sectional view showing a specific structural example of the processing unit involved in the embodiment.

[0015] Figure 4This is a schematic diagram showing a specific structural example of the liquid supply unit involved in the embodiment.

[0016] Figure 5 This is a diagram illustrating specific operational examples of the processing unit involved in the implementation method.

[0017] Figure 6 This is a diagram illustrating specific operational examples of the processing unit involved in the implementation method.

[0018] Figure 7 This is a diagram illustrating specific operational examples of the processing unit involved in the implementation method.

[0019] Figure 8 This is a diagram showing the result of a stripping treatment of an anti-corrosion film using ozone water in an embodiment and a reference example.

[0020] Figure 9 This is a graph showing the wavelength dependence of silicon absorptivity and water transmittance.

[0021] Figure 10 This is a schematic diagram illustrating a specific structural example of the liquid supply unit involved in a variation of the embodiment.

[0022] Figure 11 This is a flowchart illustrating the substrate processing process performed by the substrate processing system according to the embodiment.

[0023] Figure 12 This is a flowchart illustrating the substrate processing process performed by a substrate processing system according to a modified embodiment. Detailed Implementation

[0024] The embodiments of the substrate processing method and substrate processing apparatus disclosed in this application will now be described in detail with reference to the accompanying drawings. However, this disclosure is not limited by the embodiments shown below. It should also be noted that the drawings are schematic, and the dimensional relationships and ratios of the elements may sometimes differ from reality. Furthermore, there may be differences in dimensional relationships and ratios between the drawings.

[0025] Previously, a technique for treating substrates such as semiconductor wafers using ozone water was known. For example, this ozone water treatment could remove the resist film formed on the substrate. However, in the aforementioned prior art, there is room for further improvement in the efficiency of treating the substrate using solutions such as ozone water.

[0026] Therefore, a technology is needed that can overcome the above-mentioned problems and thus enable efficient processing of substrates using chemical solutions.

[0027] <Overview of the Substrate Processing System>

[0028] First, refer to Figure 1 The outline structure of the substrate processing system 1 involved in the implementation method will be described below. Figure 1 This is a diagram showing the general structure of the substrate processing system 1 according to the embodiment. Furthermore, the substrate processing system 1 is an example of a substrate processing apparatus. Hereinafter, to clarify the positional relationships, the mutually orthogonal X-axis, Y-axis, and Z-axis are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0029] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0030] The loading / unloading station 2 has a carrier placement section 11 and a conveying section 12. The carrier placement section 11 has multiple carriers C that are capable of horizontally accommodating multiple substrates W, or in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W).

[0031] The transport section 12 is disposed adjacent to the carrier placement section 11, and a substrate transport device 13 and a transfer section 14 are provided inside the transport section 12. The substrate transport device 13 is provided with a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis, and the wafer holding mechanism is used to transport the wafer W between the carrier C and the transfer section 14.

[0032] Processing station 3 is arranged adjacent to conveying section 12. Processing station 3 includes conveying section 15 and multiple processing units 16. Multiple processing units 16 are arranged on both sides of conveying section 15.

[0033] The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the transfer unit 14 and the processing unit 16.

[0034] The processing unit 16 performs a given substrate processing on the wafer W transported by the substrate transport device 17.

[0035] Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0036] Furthermore, the program can be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control unit 4. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0037] In the substrate processing system 1 configured as described above, firstly, the substrate transport device 13 of the transport station 2 removes the wafer W from the carrier C placed on the carrier placement section 11 and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is removed from the transfer section 14 by the substrate transport device 17 of the processing station 3 and transported into the processing unit 16.

[0038] After the wafer W is processed in the processing unit 16, it is moved out of the processing unit 16 by the substrate transport device 17 and placed in the transfer section 14. Moreover, the processed wafer W placed in the transfer section 14 is sent back to the carrier C of the carrier placement section 11 by the substrate transport device 13.

[0039] <Structure of the Processing Unit>

[0040] Next, refer to Figures 2-4 To illustrate the structure of processing unit 16. Figure 2 This is a schematic top view showing a specific structural example of the processing unit 16 involved in the embodiment. For example... Figure 2 As shown, the processing unit 16 includes a chamber 20, a substrate processing section 30, a sealing section 40, and a liquid supply section 50 (see reference). Figure 3 ) and 60 recycled cups.

[0041] The chamber 20 houses the substrate processing section 30, the sealing section 40, and the recovery cup 60. An FFU (Fan Filter Unit) (not shown) is provided at the top of the chamber 20. This FFU creates a downward flow within the chamber 20.

[0042] The substrate processing unit 30 performs liquid processing on the mounted wafer W. Details of the substrate processing unit 30 will be described later.

[0043] The sealing part 40 encloses the processing space S (refer to) within the substrate processing part 30. Figure 3 The sealed part 40 has a cover member 41, an arm 42, a rotating lifting mechanism 43, and a rotating mechanism 44. The rotating lifting mechanism 43 is an example of a lifting mechanism.

[0044] The cover member 41 is configured to accommodate the container member 31 (see reference). Figure 3 The opening 31c is sealed (refer to) Figure 3The details of the cover member 41 will be described later. The arm 42 supports the cover member 41 horizontally. The rotating lifting mechanism 43 rotates and raises the arm 42. The rotating mechanism 44 rotates the cover member 41 through the front end of the arm 42.

[0045] The liquid supply unit 50 supplies ozone water L to the wafer W in the substrate processing unit 30 (refer to...). Figure 3 ), cleaning solutions, and rinsing solutions. Ozone water L is an example of a solution. Details of the solution supply section 50 will be described later.

[0046] The recovery cup 60 is located at the position of the container member 31 surrounding the substrate processing section 30, and collects the ozone water L, cleaning fluid, and rinsing fluid that are scattered from the wafer W due to the rotation of the container member 31. A drain port (not shown) is formed at the bottom of the recovery cup 60, and the ozone water L and rinsing fluid collected by the recovery cup 60 are discharged from the drain port to the outside of the processing unit 16.

[0047] Additionally, an exhaust port (not shown) is formed at the bottom of the recovery cup 60 for discharging the gas supplied from the FFU to the outside of the processing unit 16.

[0048] Figure 3 This is a schematic cross-sectional view showing a specific structural example of the processing unit 16 involved in the embodiment. For example... Figure 3 As shown, the substrate processing unit 30 includes a container member 31, a support member 32, a drive member 33, a heater 34, and a lifting pin 35. Additionally, the container member 31 includes a substrate holding member 31a and a blocking member 31b.

[0049] The substrate holding portion 31a of the container member 31 has a generally circular plate shape and is used to adsorb the bottom surface of the wafer W to hold the wafer W horizontally. The blocking member 31b is located at the entire periphery of the substrate holding portion 31a in an upright manner to block the ozone water L supplied to the wafer W on the substrate holding portion 31a.

[0050] In this way, the container member 31 according to the embodiment has a generally cylindrical part with an opening 31c formed at the top and a processing space S formed inside, through the substrate holding part 31a and the blocking member 31b. Moreover, the wafer W and the like enter and exit relative to the processing space S through the opening 31c.

[0051] The support member 32 is a member extending in a vertical direction. Its base end is supported by the drive member 33 in a rotatable manner, and the container member 31 is horizontally supported at the front end of the support member 32. The drive member 33 causes the support member 32 to rotate about a vertical axis.

[0052] The substrate processing unit 30 uses the drive unit 33 to rotate the support unit 32, thereby rotating the container member 31 supported on the support unit 32, and thereby rotating the wafer W held in the substrate holding unit 31a of the container member 31.

[0053] The heater 34 is a planar heater disposed on the back side (i.e., the lower side) of the substrate holding portion 31a, and can be, for example, made of a polyimide heater.

[0054] The lifting pin 35 is located through the substrate holding part 31a and the heater 34, and is configured to move up and down via a lifting mechanism (not shown).

[0055] Furthermore, when the wafer W is placed on the substrate holding section 31a, the lifting pin 35 supports the wafer W. For example, three lifting pins 35 are provided in the substrate processing section 30, and they are located at intervals of 120 degrees in the circumferential direction.

[0056] Gas nozzle 45, liquid nozzle 47, light source 48, and window member 49 are located on cover member 41 of sealing part 40. The outlet of gas nozzle 45 and the outlet of liquid nozzle 47 are exposed on the bottom surface of cover member 41.

[0057] Additionally, the gas nozzle 45 is connected to the gas supply unit 46. The gas supply unit 46 supplies gas (e.g., nitrogen, dry air, oxygen, or ozone gas) to the gas nozzle 45.

[0058] The gas supply unit 46 includes a gas supply path 46a, a gas supply source 46b, a pump 46c, a flow regulator 46d, and a check valve 46e.

[0059] Gas supply path 46a connects gas supply source 46b to gas nozzle 45 to supply gas (e.g., nitrogen, dry air, oxygen, or ozone gas) from gas supply source 46b to gas nozzle 45. Additionally, in gas supply path 46a, a pump 46c, a flow regulator 46d, and a check valve 46e are sequentially arranged from the upstream side.

[0060] Pump 46c pressurizes the gas supplied to gas nozzle 45 to a pressure higher than atmospheric pressure. Flow regulator 46d adjusts the amount of gas supplied to gas nozzle 45. Flow regulator 46d includes an on / off valve, a flow control valve, and a flow meter. Check valve 46e prevents gas from flowing back from gas nozzle 45 to flow regulator 46d.

[0061] Additionally, an open path 46f is connected downstream of the check valve 46e in the gas supply path 46a, and this open path 46f is connected to the external atmosphere via a flow regulator 46g.

[0062] The liquid nozzle 47 is connected to the liquid supply unit 50. The liquid supply unit 50 supplies various treatment liquids (such as ozone water, cleaning fluid, and rinsing fluid) to the liquid nozzle 47.

[0063] Figure 4 This is a schematic diagram illustrating a specific structural example of the liquid supply unit 50 according to the embodiment. The liquid supply unit 50 selectively generates ozone water L (see reference). Figure 3 Various treatment liquids, such as rinsing fluid and cleaning fluid, are supplied to the liquid nozzle 47.

[0064] The liquid supply unit 50 has a first supply path 100, a second supply path 110, a third supply path 120, a fourth supply path 130, a fifth supply path 140, a mixer 150, a sixth supply path 160, and a branch path 170.

[0065] The first supply path 100 connects the DIW supply source 101 to the mixer 150. The first supply path 100 is used to supply the mixer 150 with DIW (Deionized Water) as a raw material for ozone water L, DIW as a rinsing liquid, and SC1 (a mixture of ammonia water and hydrogen peroxide water) as a cleaning liquid.

[0066] The first supply path 100 includes, from the upstream side, a DIW supply source 101, a degassing module 102, a cooler 103, a valve 104, a pressure regulating valve 105, and a flow meter 106.

[0067] The DIW supply source 101 is, for example, a tank for storing DIW. The degassing module 102 removes dissolved gases such as nitrogen dissolved inside the DIW supplied from the DIW supply source 101. By using this degassing module 102 to remove the dissolved gases contained in the DIW, ozone gas can be efficiently dissolved in the DIW.

[0068] Cooler 103 cools the DIW flowing in the first supply path 100 to a specified temperature (e.g., 10°C to 20°C). By using cooler 103 to cool the DIW, ozone gas can be efficiently dissolved in the DIW.

[0069] The pressure regulating valve 105 adjusts the flow rate of DIW supplied to the mixer 150 based on the flow rate of DIW measured by the flow meter 106. That is, the pressure regulating valve 105 implements feedback control based on the flow rate of DIW measured by the flow meter 106.

[0070] A second supply path 110 is connected to the mixer 150 downstream of the connection point with the first supply path 100. The second supply path 110 is used to supply the mixer 150 with an acidic solution such as an organic acid (e.g., citric acid or acetic acid), hydrochloric acid, or sulfuric acid. In an embodiment, by supplying an acidic solution to the DIW, the pH of the DIW is adjusted to be acidic, thereby increasing the concentration of ozone dissolved in the DIW.

[0071] The second supply path 110, starting from the upstream side, includes an acid-based liquid supply source 111, a valve 112, a pressure regulating valve 113, and a flow meter 114. The acid-based liquid supply source 111 may be, for example, a tank or circulation line capable of generating acid-based liquid.

[0072] The pressure regulating valve 113 adjusts the flow rate of the acidic liquid supplied to the mixer 150 based on the flow rate of the acidic liquid measured by the flow meter 114. That is, the pressure regulating valve 113 implements feedback control based on the flow rate of the acidic liquid measured by the flow meter 114.

[0073] A third supply path 120 is connected downstream of the connection point of the second supply path 110 in the mixer 150. The third supply path 120 is used to supply ozone gas to the mixer 150.

[0074] The third supply path 120 includes, from the upstream side, an oxygen supply source 121, a pressure regulating valve 122, a valve 123, an ozone gas generating unit 124, and a valve 125. Additionally, a check valve may be provided between the valve 125 and the mixer 150.

[0075] Oxygen supply source 121 is, for example, a tank for storing oxygen. Ozone gas generating unit 124 uses the oxygen supplied from oxygen supply source 121 as raw material to generate ozone gas using known techniques.

[0076] In addition, although Figure 4 Not shown in the figure, but the ozone gas generating unit 124 is connected to a cooling water supply unit for supplying cooling water and a cooling water discharge unit for discharging used cooling water.

[0077] A fourth supply path 130 is connected to the mixer 150 at a position downstream of the connection point with the third supply path 120. The fourth supply path 130 is used to supply ammonia water, which becomes the raw material for SC1 as a cleaning fluid, to the mixer 150.

[0078] The fourth supply path 130, starting from the upstream side, includes an ammonia supply source 131, a valve 132, a pressure regulating valve 133, and a flow meter 134. The ammonia supply source 131 is, for example, a tank for storing ammonia.

[0079] The pressure regulating valve 133 adjusts the flow rate of ammonia supplied to the mixer 150 based on the flow rate of ammonia measured by the flow meter 134. That is, the pressure regulating valve 133 implements feedback control based on the flow rate of ammonia measured by the flow meter 134.

[0080] A fifth supply path 140 is connected to the mixer 150 at a position downstream of the connection point with the fourth supply path 130. The fifth supply path 140 is used to supply hydrogen peroxide water, which serves as the raw material for SC1 as a cleaning fluid, to the mixer 150.

[0081] The fifth supply path 140, starting from the upstream side, includes a hydrogen peroxide water supply source 141, a valve 142, a pressure regulating valve 143, and a flow meter 144. The hydrogen peroxide water supply source 141 is, for example, a tank for storing hydrogen peroxide water.

[0082] The pressure regulating valve 143 adjusts the flow rate of hydrogen peroxide water supplied to the mixer 150 based on the flow rate of hydrogen peroxide water measured by the flow meter 144. That is, the pressure regulating valve 143 implements feedback control based on the flow rate of hydrogen peroxide water measured by the flow meter 144.

[0083] The mixer 150 selectively mixes other liquids or gases with the DIW supplied from the first supply path 22 to selectively generate various treatment liquids. For example, the mixer 150 can mix the DIW supplied from the first supply path 22 with an acidic liquid supplied from the second supply path 110 and ozone gas supplied from the third supply path 120 to generate ozone water L.

[0084] Additionally, mixer 150 can mix DIW supplied from the first supply path 22 with ammonia water supplied from the fourth supply path 130 and hydrogen peroxide water supplied from the fifth supply path 140 to generate SC1.

[0085] Alternatively, the mixer 150 may not mix the DIW supplied from the first supply path 22 with other liquids or gases, allowing the DIW to flow downstream of the mixer 150 as a rinsing fluid. A sixth supply path 160 is connected to the downstream side of the mixer 150.

[0086] The sixth supply path 160 is provided between the mixer 150 and the cover member 41 (see reference). Figure 3 Between the liquid nozzles 47, ozone water L from various treatment liquids generated by the mixer 150 is supplied to the liquid nozzles 47.

[0087] The sixth supply path 160, starting from the upstream side, includes a branch section 161, a valve 162, a dissolving module 163, a pump 164, a filter 165, a flow meter 166, a check valve 167, and a confluence section 168.

[0088] Branch path 170 branches out from branch 161. Branch path 170 is used to selectively supply SC1, which is a cleaning fluid, and DIW, which is a rinsing fluid, from the various processing fluids generated by mixer 150 to liquid nozzle 47.

[0089] Branch path 170 has a pressure regulating valve 171, a filter 172, a flow meter 173, a valve 174 and a check valve 175 in sequence from the upstream side. Branch path 170 merges with the sixth supply path 160 at the confluence section 168.

[0090] The pressure regulating valve 171 adjusts the flow rate of the cleaning fluid or rinsing fluid flowing in the branch path 170 based on the flow rate of the cleaning fluid or rinsing fluid measured by the flow meter 173. That is, the pressure regulating valve 171 implements feedback control based on the flow rate of the cleaning fluid or rinsing fluid measured by the flow meter 173.

[0091] Filter 172 removes particulate matter and other contaminants from the cleaning and rinsing fluid flowing in branch path 170. Check valve 175 prevents backflow of the cleaning and rinsing fluid flowing in branch path 170. Check valve 175 is, for example, a pneumatic valve.

[0092] Returning to the description of the sixth supply path 160, the dissolution module 163 dissolves ozone gas that was not completely dissolved in the mixer 150 into the ozone water L. This increases the ozone concentration in the ozone water L.

[0093] Pump 164 pressurizes the ozone-rich water L flowing in the sixth supply path 160 to a given pressure higher than atmospheric pressure. The pressurized ozone-rich water L is then supplied to the liquid nozzle 47 via the sixth supply path 160. In this way, by pressurizing the ozone-rich water L, ozone-rich water L with a given ozone concentration can be generated efficiently.

[0094] This is because the mole fraction M of ozone gas dissolved in DIW as a feedstock is estimated to follow Henry's law as shown in equation (1), in which the mole fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas.

[0095] M=H -1 ·P…(1)

[0096] H: Henry's constant

[0097] Here, the "given ozone concentration" mentioned above is, for example, the ozone concentration that can remove (strip) the resist film formed on wafer W, for example, 10 ppm to 300 ppm. Additionally, the "given pressure" mentioned above is, for example, the pressure that can maintain the ozone concentration of ozone water L at the given ozone concentration, for example, in the range of 0.6 MPa to 2.0 MPa.

[0098] Filter 172 removes particulate matter and other pollutants from the ozone water flowing in the sixth supply path 160. Additionally, in filter 165, ozone gas that is not completely dissolved in the solution is released. Check valve 167 prevents backflow of the ozone water L flowing in the sixth supply path 160. Check valve 167 is, for example, a pneumatic valve.

[0099] Return to Figure 3 Continuing with the description of the cover member 41, a light source 48 is disposed on the bottom surface of the cover member 41 facing the wafer W placed in the processing space S inside the container member 31. The light source 48 irradiates the entire upper surface of the wafer W placed in the processing space S inside the container member 31 with light of a given wavelength (e.g., wavelength of 350 nm to 600 nm).

[0100] Furthermore, in this disclosure, the wavelength of the light irradiated from the light source 48 is the wavelength with the strongest intensity among various wavelengths of light irradiated from the light source 48.

[0101] The light source 48 may be, for example, a UV-LED element that emits light of a given wavelength (e.g., a wavelength close to any one of the g-line (436 nm), h-line (405 nm), and i-line (364 nm).

[0102] Window member 49 is located on the bottom surface of cover member 41 in a manner that covers light source 48. Window member 49 allows light emanating from light source 48 to pass through and protects light source 48 from the various processing solutions used to process wafer W in processing space S. Window member 49 is made of, for example, inorganic materials such as quartz glass or organic materials such as perfluoroalkoxyalkane (PFA).

[0103] In the processing unit 16 described so far, as Figure 3 As shown, the cover member 41, which has moved above the container member 31, descends and closes the opening 31c of the container member 31, thereby sealing the processing space S inside the container member 31. Next, referring to... Figures 5-9 This section will explain the details of the substrate processing, including the sealing process.

[0104] <Details of substrate processing>

[0105] Figures 5-7 This is a diagram illustrating a specific example of the operation of the processing unit 16 involved in the implementation method. For example... Figure 5 As shown, the cover member 41 has a protrusion 41a that protrudes outward from the periphery. In addition, an O-ring 41b is provided on the bottom surface 41a of the protrusion 41a.

[0106] Furthermore, a slit 31b1 is formed at the position corresponding to the protrusion 41a on the blocking member 31b of the container member 31. Moreover, the upper surface 31b2 of the slit 31b1 has an inclination that decreases in position in one direction toward the circumferential direction, and the lower surface 31b3 of the slit 31b1 is approximately horizontal.

[0107] Here, the substrate processing procedure according to the embodiment is as follows. First, the control unit 18 (refer to...) Figure 1 )like Figure 5 As shown, the wafer W is placed inside the processing space S of the container member 31. In this embodiment, a resist film (not shown) is formed on the wafer W placed in the processing space S.

[0108] Next, the control unit 18 controls the rotation of the lifting mechanism 43 (see reference). Figure 2 The control unit 18 moves the cover member 41 to close the opening 31c of the container member 31. Furthermore, the control unit 18 controls the rotation mechanism 44 (see reference 18). Figure 2 The cover member 41 is rotated along the central axis so that the protrusion 41a of the cover member 41 is inserted into the slit 31b of the blocking member 31b.

[0109] Therefore, the upper surface 41a1 of the protrusion 41a moves downward along the upper surface 31b2 of the slit 31b1, so the bottom surface 41a2 of the protrusion 41a is pressed against the lower surface 31b3 of the slit 31b1.

[0110] As a result, the O-ring 41b located on the bottom surface 41a of the protrusion 41a is pressed against the lower surface 31b of the slit 31b, thus the cover member 41 according to the embodiment can completely seal the processing space S inside the container member 31. That is, in the embodiment, the opening 31c of the container member 31 is completely sealed by the threaded engagement between the cover member 41 and the container member 31.

[0111] Next, control unit 18 (refer to) Figure 1 )like Figure 6 As shown, control fluid supply unit 50 (refer to) Figure 3 ), so that the liquid from nozzle 47 (refer to) Figure 3 Ozone water L is supplied to the enclosed treatment space S of the covered component 41.

[0112] Therefore, the wafer W is immersed in ozone water L inside the processing space S. The temperature of the ozone water L supplied to the processing space S is, for example, room temperature (e.g., 25°C). That is, no heating treatment is performed on the ozone water L supplied to the processing space S.

[0113] Next, the control unit 18 controls the gas supply unit 46 (see reference). Figure 3This allows gas to be supplied from the gas nozzle 45 to the sealed processing space S of the covered member 41, thereby pressurizing the processing space S to a pressure higher than atmospheric pressure.

[0114] Next, control unit 18 (refer to) Figure 1 )like Figure 7 The light source 48 is controlled as shown so that light of a given wavelength is irradiated onto the wafer W in the processing space S. This light is then used to heat the wafer W in the processing space S.

[0115] Furthermore, in this embodiment, the wafer W immersed in ozone water L is heated using light irradiated from the light source 48, and the resist film formed on the wafer W is stripped. This improves the stripping performance of the resist film formed on the surface of the wafer W. In other words, in this embodiment, the wafer W can be processed efficiently using ozone water L.

[0116] Figure 8 This is a diagram showing the results of resist film stripping treatment using ozone water L in the embodiments and reference examples. Furthermore, in these stripping treatments, the stripping process is performed under atmospheric pressure in the processing space where the wafer W is located.

[0117] like Figure 8 As shown, compared with immersing wafer W in ozone water L at a temperature higher than room temperature for peeling, the peeling time is shorter (i.e., peeling performance is improved) when wafer W is immersed in ozone water L at room temperature and further irradiated with light for peeling.

[0118] In the reference example, because the temperature of the ozone water L is increased, the solubility of ozone gas is lower than that at room temperature, and therefore the ozone concentration of the ozone water L is lower than that at room temperature. On the other hand, in the embodiment, by irradiating the wafer W with light of a given wavelength, the wafer W can be heated while maintaining the ozone concentration of the ozone water L at a high concentration. Therefore, it is presumed that the peeling performance is improved in the embodiment.

[0119] In addition, in the embodiment, it is preferable to set the wavelength of the light irradiated from the light source 48 to 350nm to 600nm, more preferably to 360nm to 500nm, and even more preferably to 380nm to 450nm.

[0120] Figure 9 This is a graph showing the wavelength dependence of silicon absorptivity and water transmittance. This is achieved by setting the wavelength of the light irradiated from light source 48 within the aforementioned range, such as... Figure 9 As shown, compared to using a shorter wavelength of light (e.g., around 300 nm), the absorption rate of silicon wafer W can be increased.

[0121] Therefore, the wafer W can be heated efficiently, thus enabling efficient stripping of the resist film. In other words, in this embodiment, the wafer W can be efficiently treated using ozone water L.

[0122] Furthermore, by setting the wavelength of the light irradiated from the light source 48 within the aforementioned range, such as... Figure 9 As shown, compared to using a longer wavelength of light (e.g., around 700 nm), it can increase the transmittance of water.

[0123] Therefore, it is possible to suppress the heating of ozone water L by light from light source 48, thus maintaining the ozone concentration of ozone water L well.

[0124] Furthermore, in this embodiment, the ozone concentration (i.e., the dissolved concentration of ozone gas) in the ozone water L can be from 10 ppm to 300 ppm. This further improves the stripping performance of the resist film. In other words, in this embodiment, the wafer W can be processed more efficiently using ozone water L.

[0125] Furthermore, in this embodiment, the processing space S can be pressurized to a pressure higher than atmospheric pressure, and the wafer W can be treated with ozone water L. This improves the resist peeling performance. In other words, in this embodiment, the wafer W can be processed more efficiently using ozone water L.

[0126] Alternatively, in this embodiment, the pressurization process of pressurizing the processing space S to a pressure higher than atmospheric pressure can also be performed by supplying pressurized gas to the processing space S from the gas supply unit 46. This allows for a simple and convenient implementation of the pressurization process of the processing space S.

[0127] Alternatively, in the embodiment, the pressurization process of pressurizing the processing space S to a pressure higher than atmospheric pressure can also be carried out using nitrogen, dry air, oxygen, or ozone gas. By using nitrogen, dry air, or oxygen for pressurization, the pressurization process of the processing space S can be implemented at a low cost.

[0128] Furthermore, by pressurizing the process with ozone gas, the ozone concentration in the ozone water L increases as the ozone gas dissolves in the ozone water L within the processing space S. This further improves the stripping performance of the resist film. In other words, in this embodiment, the wafer W can be processed more efficiently using ozone water L.

[0129] Alternatively, in the embodiment, pressurization processing, which pressurizes the processing space S to a pressure higher than atmospheric pressure, can also be carried out by pressurizing and supplying gas into the processing space S at a pressure of 0.1 MPa to 0.8 MPa.

[0130] By setting the gas pressure to 0.1 MPa or higher, the improvement effect of liquid treatment using ozone water L through pressurized treatment can be enhanced. In addition, by setting the gas pressure to 0.8 MPa or lower, the accidental detachment of the cover member 41 due to excessive pressurization of the treatment space S can be prevented.

[0131] Therefore, according to the implementation method, the wafer W can be processed efficiently and stably using ozone water L.

[0132] Furthermore, in this disclosure, the pressurization process of pressurizing the processing space S to a pressure higher than atmospheric pressure is not limited to the case where gas is supplied from the gas supply unit 46. For example, in an embodiment, this pressurization process can also be performed using the liquid supply unit 50 (see...). Figure 3 Pump 164 (reference) Figure 4 Ozone water L, pressurized to a pressure higher than atmospheric pressure, is supplied to the processing space S.

[0133] Therefore, pressurization of the processing space S can be performed without the need to separately install a gas nozzle 45 and a gas supply unit 46 in the processing unit 16. Consequently, according to the embodiment, the manufacturing cost of the processing unit 16 can be reduced.

[0134] Alternatively, in the embodiment, pressurization treatment, which pressurizes the treatment space S to a pressure higher than atmospheric pressure, can also be carried out by pressurizing the treatment space S with ozone water L at a pressure of 0.1 MPa to 0.8 MPa.

[0135] By setting the supply pressure of ozone water L to 0.1 MPa or higher, the improvement effect of liquid treatment using ozone water L through pressurized treatment can be improved. In addition, by setting the supply pressure of ozone water L to 0.8 MPa or lower, the accidental detachment of the cover member 41 due to excessive pressurization of the treatment space S can be prevented.

[0136] Therefore, according to the implementation method, the wafer W can be processed efficiently and stably using ozone water L.

[0137] In addition, in the embodiment, after pressurizing the processing space S to a given pressure, the supply of gas from the gas nozzle 45 or the supply of ozone water L from the liquid nozzle 47 can be stopped, or the supply of gas or ozone water L can continue.

[0138] By stopping the supply of gas or ozone water L after pressurizing the processing space S to a given pressure, the amount of gas or ozone water L used can be reduced, thus reducing the cost of resist film stripping treatment using ozone water L.

[0139] On the other hand, by continuing to supply gas or ozone water L after pressurizing the processing space S to a given pressure, the given pressure can be stably maintained, thus enabling stable liquid treatment using ozone water L.

[0140] Alternatively, in the embodiment, the irradiation treatment from the light source 48 can be performed after the sealing treatment using the cover member 41, the immersion treatment of the wafer W using ozone water L, and the pressurization treatment of the processing space S.

[0141] In this way, by performing irradiation treatment after sealing, immersion, and pressurization, the detachment of ozone gas from the slightly heated ozone water L due to irradiation treatment can be minimized. Therefore, according to the embodiment, the peeling performance of the resist film can be well maintained.

[0142] Furthermore, according to the embodiment, by performing pressurization after completely sealing the processing space S by threading the cover member 41 to the container member 31, the processing space S can be pressurized efficiently. Therefore, according to the embodiment, the amount of gas or ozone water L used can be reduced, thereby reducing the cost of the anti-corrosion film stripping treatment using ozone water L.

[0143] Alternatively, in this embodiment, the wafer W within the processing space S can be heated and liquid-treated using the heater 34. This further improves the resist stripping performance. In other words, in this embodiment, the wafer W can be processed more efficiently using ozone water L.

[0144] Furthermore, in this embodiment, when liquid processing is performed on the wafer W within the processing space S, the container component 31 and the cover component 41 can be rotated 180 degrees as a single unit. This allows for the stirring of the ozone water L stored within the processing space S. Therefore, according to this embodiment, liquid processing can be performed uniformly on the entire wafer W.

[0145] In addition, Figure 3 In the example shown, the liquid nozzle 47 is integrally provided with the cover member 41, but the liquid nozzle 47 may also be provided separately from the cover member 41. In this case, it is advisable to perform an immersion treatment of the wafer W in ozone water L before the sealing treatment that seals the processing space S using the cover member 41.

[0146] <Variation Example>

[0147] In the above embodiments, an example of treating wafer W using ozone water L as a chemical solution was described. However, wafer W can also be treated using a chemical solution different from ozone water L. Therefore, in a modified example, an example of treating wafer W using a chemical solution different from ozone water L will be described.

[0148] Figure 10 This is a schematic diagram illustrating a specific structural example of the liquid supply unit 50 according to a modified embodiment. Figure 10 As shown, the liquid supply unit 50 involved in the modified example does not have a second supply path 110 (see reference). Figure 4 ) and the third supply path 120 (refer to Figure 4 This differs from the embodiment described above. Furthermore, the liquid supply unit 50 in this modified example has a seventh supply path 200, which also differs from the embodiment described above.

[0149] The seventh supply path 200 is connected to the mixer 150 for supplying the mixer 150 with ozone water L (see reference). Figure 3 Different solutions. In this variation, the solution that is different from ozone water L will be referred to simply as "solution".

[0150] The solution can be, for example, SC1 (a mixture of ammonia and hydrogen peroxide water), SC2 (a mixture of hydrochloric acid and hydrogen peroxide water), hydrogen peroxide water (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), or sulfuric acid (H2SO4). Alternatively, the solution can also be, for example, SPM (a mixture of sulfuric acid and hydrogen peroxide water), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

[0151] The seventh supply path 200, starting from the upstream side, includes a liquid supply source 201, a valve 202, a pressure regulating valve 203, and a flow meter 204. The liquid supply source 201 may be, for example, a tank or circulation line capable of generating liquid medicine.

[0152] The pressure regulating valve 203 adjusts the flow rate of the liquid medicine supplied to the mixer 150 based on the flow rate of the liquid medicine measured by the flow meter 204. That is, the pressure regulating valve 203 implements feedback control based on the flow rate of the liquid medicine measured by the flow meter 204.

[0153] Furthermore, in the modified liquid supply unit 50, the components other than the seventh supply path 200 are the same as those in the embodiment by replacing "ozone water L" with "medicinal liquid". Therefore, the structural elements other than the seventh supply path 200 are omitted from the description.

[0154] The substrate processing procedure involved in the modified example is shown below. First, the control unit 18 (refer to...) Figure 1 )like Figure 5 As shown, the wafer W is placed in the processing space S inside the container component 31.

[0155] Next, the control unit 18 controls the rotation of the lifting mechanism 43 (see reference).Figure 2 The control unit 18 moves the cover member 41 to close the opening 31c of the container member 31. Furthermore, the control unit 18 controls the rotation mechanism 44 (see reference 18). Figure 2 The cover member 41 is rotated along the central axis so that the protrusion 41a of the cover member 41 is inserted into the slit 31b of the blocking member 31b.

[0156] Thus, similar to the embodiment described above, the O-ring 41b located on the bottom surface 41a2 of the protrusion 41a is pressed against the lower surface 31b3 of the slit 31b1, so that the cover member 41 can completely seal the processing space S inside the container member 31.

[0157] Next, control unit 18 (refer to) Figure 1 )like Figure 6 As shown, control fluid supply unit 50 (refer to) Figure 10 ), so that the liquid from nozzle 47 (refer to) Figure 3 The chemical solution is supplied to the enclosed processing space S of the covered component 41. As a result, the wafer W is immersed in the chemical solution inside the processing space S.

[0158] Next, the control unit 18 controls the gas supply unit 46 (see reference). Figure 3 This allows gas to be supplied from the gas nozzle 45 to the processing space S sealed by the covered member 41, thereby pressurizing the processing space S to a pressure higher than atmospheric pressure.

[0159] Next, control unit 18 (refer to) Figure 1 )like Figure 7 The light source 48 is controlled as shown so that light of a given wavelength is irradiated onto the wafer W in the processing space S. This light is then used to heat the wafer W in the processing space S.

[0160] Furthermore, in a modified example, the wafer W immersed in the chemical solution is heated and liquid-treated using light irradiated from the light source 48. Thus, the wafer W can be processed efficiently using the chemical solution.

[0161] In a modified example, the processing space S can be pressurized to a pressure higher than atmospheric pressure, and the wafer W can be processed using a chemical solution. This allows for more efficient processing of the wafer W using the chemical solution.

[0162] Furthermore, in a modified example, pressurization of the processing space S to a pressure higher than atmospheric pressure can also be performed by supplying pressurized gas to the processing space S from the gas supply unit 46. This allows for a simple and convenient implementation of pressurization of the processing space S.

[0163] Furthermore, in a modified example, the pressurization process of pressurizing the processing space S to a pressure higher than atmospheric pressure can also be carried out using nitrogen, dry air, or oxygen. Therefore, pressurization of the processing space S can be implemented at a low cost.

[0164] Furthermore, in a modified example, pressurization processing, which pressurizes the processing space S to a pressure higher than atmospheric pressure, can also be performed by pressurizing the processing space S with gas at 0.1 MPa to 0.8 MPa. Thus, similar to the embodiments described above, the wafer W can be processed efficiently and stably using the chemical solution.

[0165] Furthermore, in a modified example, similar to the embodiment described above, this pressurization process can also be achieved using the liquid supply unit 50 (see reference 50). Figure 3 Pump 164 (reference) Figure 4 The process involves supplying the processing space S with a liquid drug that has been pressurized to a pressure higher than atmospheric pressure.

[0166] Therefore, pressurization of the processing space S can be performed without the need to separately install a gas nozzle 45 and a gas supply unit 46 in the processing unit 16. Thus, according to the modified example, the manufacturing cost of the processing unit 16 can be reduced.

[0167] Furthermore, in a modified example, pressurization processing, which pressurizes the processing space S to a pressure higher than atmospheric pressure, can also be performed by pressurizing the chemical solution into the processing space S at 0.1 MPa to 0.8 MPa. Thus, similar to the embodiments described above, the wafer W can be processed efficiently and stably using the chemical solution.

[0168] In addition, in a modified example, similar to the above-described embodiment, the supply of gas from the gas nozzle 45 or the supply of liquid medicine from the liquid nozzle 47 may be stopped after the processing space S is pressurized to a given pressure, or the supply of gas or liquid medicine may continue.

[0169] Furthermore, according to a modified example, by completely sealing the processing space S after threading the cover member 41 to the container member 31 and then performing pressurization, the processing space S can be pressurized efficiently. Therefore, according to the modified example, the amount of gas or liquid used can be reduced, thereby reducing the cost of liquid processing of the wafer W using liquid.

[0170] Alternatively, in a modified example, the wafer W within the processing space S can be heated and liquid-processed using the heater 34. This allows for more efficient processing of the wafer W using the liquid solution.

[0171] Furthermore, in a modified example, when liquid processing is performed on the wafer W within the processing space S, the container member 31 and the cover member 41 can be rotated 180 degrees as a single unit. This allows for stirring of the liquid solution stored within the processing space S. Therefore, according to the modified example, liquid processing can be performed uniformly on the entire wafer W.

[0172] The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a container member 31, a cover member 41, a light source 48, a gas nozzle 45, a liquid nozzle 47, and a control unit 18. The container member 31 has a substrate holding portion 31a that holds the substrate (wafer W) horizontally and a processing space S for processing the substrate (wafer W), and is configured to be rotatable. The cover member 41 is configured to seal the opening 31c of the container member 31. The light source 48 is provided on the cover member 41 and illuminates the substrate (wafer W) held in the substrate holding portion 31a. The gas nozzle 45 is provided on the cover member 41 and supplies pressurized gas from the bottom surface of the cover member 41. The liquid nozzle 47 supplies a chemical solution into the container member 31. The control unit 18 controls each part. Furthermore, the control unit 18 holds the substrate (wafer W) with a resist film on its surface via the substrate holding portion 31a and supplies a chemical solution into the processing space S to immerse the substrate (wafer W) in the chemical solution. Next, the control unit 18 supplies pressurized gas through the gas nozzle 45 to pressurize the processing space S sealed by the cover member 41 to a pressure higher than atmospheric pressure, and irradiates the substrate (wafer W) in the chemical solution with light of wavelength 350nm to 600nm from the light source 48. Thus, the wafer W can be efficiently processed using a chemical solution such as ozone water L.

[0173] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, a liquid nozzle 47 is provided on the cover member 41. As a result, the cost of the processing unit 16 can be reduced.

[0174] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the cover member 41 is configured to retract from the opening 31c of the container member 31, and the cover member 41 has a lifting mechanism (rotation lifting mechanism 43). Thus, the wafer W can be placed inside the processing space S through the opening 31c of the container member 31.

[0175] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the substrate holding section 31a has a heater 34 for heating the substrate (wafer W). This allows for more efficient processing of the wafer W using a solution such as ozone water L.

[0176] <Processing Procedure>

[0177] Next, refer to Figure 11 and Figure 12The process of substrate processing involved in the implementation method will be explained. Figure 11 This is a flowchart illustrating the substrate processing process performed by the substrate processing system 1 according to the embodiment.

[0178] First, the control unit 18 controls the substrate transport devices 13, 17, etc., to transport the wafer W to the processing unit 16, and uses the substrate holding part 31a of the processing unit 16 to hold the wafer W horizontally (step S101). Furthermore, the control unit 18 controls the substrate holding part 31a to hold the wafer W (step S102).

[0179] Next, the control unit 18 controls the sealing unit 40 to seal the processing space S using the cover member 41 (step S103). Furthermore, the control unit 18 controls the liquid supply unit 50 to supply ozone water L from the liquid nozzle 47 to the processing space S, so as to immerse the wafer W in the processing space S in the ozone water L (step S104).

[0180] Next, the control unit 18 controls the gas supply unit 46 to supply gas from the gas nozzle 45 to the processing space S, thereby pressurizing the processing space S to a pressure higher than atmospheric pressure (step S105). Furthermore, the control unit 18 controls the light source 48 to irradiate the wafer W in the processing space S with light of a given wavelength (step S106).

[0181] Furthermore, the control unit 18 immerses the wafer W in ozone water L and continuously pressurizes and irradiates it with light within the processing space S to perform a stripping process of the resist film formed on the wafer W (step S107).

[0182] Furthermore, during step S107, the control unit 18 can also rotate the container member 31 and the cover member 41 together by 180 degrees. This allows for stirring of the ozone water L stored in the processing space S, thus enabling uniform liquid processing of the entire wafer W.

[0183] After a given processing time, the control unit 18 closes the flow regulator 46d of the gas supply path 46a and opens the flow regulator 46g of the open path 46f, thereby opening the processing space S to atmospheric pressure (step S108). Furthermore, the control unit 18 controls the sealing part 40 to raise the cover member 41 (step S109).

[0184] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a rinsing process on the wafer W (step S110). In this rinsing process, for example, after the control unit 18 rotates the container member 31 to shake off the ozone water L stored in the processing space S, it supplies rinsing liquid to the rotating wafer W.

[0185] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a cleaning process on the wafer W (step S111). In this cleaning process, for example, the control unit 18 supplies SC1, which is a cleaning solution, to the rotating wafer W.

[0186] Furthermore, the cleaning solution disclosed herein is not limited to SC1, and may also be functional water (ozonated water, diluted ammonia water, hydrogen water, etc.) or drying aids (TMSDMA (N-(Trimethylsilyl)dimethylamine), IPA (IsopropylAlcohol, etc.).

[0187] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a rinsing process on the wafer W (step S112). In this rinsing process, for example, the control unit 18 supplies rinsing liquid to the rotating wafer W.

[0188] Finally, the control unit 18 controls the substrate processing unit 30 to perform a drying process on the wafer W by discarding the rinsing liquid or the like stored in the processing space S (step S113), thus ending the series of substrate processing involved in the embodiment.

[0189] Figure 12 This is a flowchart illustrating the substrate processing process performed by the substrate processing system 1 according to a modified embodiment.

[0190] First, the control unit 18 controls the substrate transport devices 13, 17, etc., to transport the wafer W to the processing unit 16, and uses the substrate holding part 31a of the processing unit 16 to hold the wafer W horizontally (step S201). Then, the control unit 18 controls the substrate holding part 31a to hold the wafer W (step S202).

[0191] Next, the control unit 18 controls the sealing unit 40 to seal the processing space S using the cover member 41 (step S203). Furthermore, the control unit 18 controls the liquid supply unit 50 to supply liquid from the liquid nozzle 47 to the processing space S, thereby immersing the wafer W in the processing space S in the liquid (step S204).

[0192] Next, the control unit 18 controls the gas supply unit 46 to supply gas from the gas nozzle 45 to the processing space S, thereby pressurizing the processing space S to a pressure higher than atmospheric pressure (step S205). Furthermore, the control unit 18 controls the light source 48 to irradiate the wafer W in the processing space S with light of a given wavelength (step S206).

[0193] Furthermore, the control unit 18 immerses the wafer W in the solution and continuously pressurizes and irradiates it with light within the processing space S to perform liquid processing on the wafer W (step S207).

[0194] Furthermore, in step S207, the control unit 18 can also rotate the container member 31 and the cover member 41 together by 180 degrees. This allows the liquid solution stored in the processing space S to be stirred, thus enabling uniform liquid processing of the entire wafer W.

[0195] After a given processing time, the control unit 18 closes the flow regulator 46d of the gas supply path 46a and opens the flow regulator 46g of the open path 46f, thereby opening the processing space S to atmospheric pressure (step S208). Furthermore, the control unit 18 controls the sealing part 40 to raise the cover member 41 (step S209).

[0196] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a rinsing process on the wafer W (step S210). In this rinsing process, for example, after the control unit 18 rotates the container member 31 to throw off the liquid stored in the processing space S, it supplies rinsing liquid to the rotating wafer W.

[0197] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a cleaning process on the wafer W (step S211). In this cleaning process, for example, the control unit 18 supplies SC1, etc., as a cleaning solution to the rotating wafer W.

[0198] Next, the control unit 18 controls the substrate processing unit 30 and the liquid supply unit 50, etc., to perform a rinsing process on the wafer W (step S212). In this rinsing process, for example, the control unit 18 supplies rinsing liquid to the rotating wafer W.

[0199] Finally, the control unit 18 controls the substrate processing unit 30 to perform a drying process on the wafer W by discarding the rinsing liquid or the like stored in the processing space S (step S213), thus ending the series of substrate processing involved in the modified example.

[0200] In addition, during the processes in steps S113 and S213, the wafer W can also be heated by activating the heater 34, thereby drying the wafer W.

[0201] Furthermore, in this disclosure, steps S104 to S108 or steps S204 to S208 can be repeated multiple times. Therefore, wafer W can be processed more efficiently using solutions such as ozone water L.

[0202] The substrate processing method described in this embodiment includes a holding process (steps S101, S201), an immersion process (steps S104, S204), a pressurizing process (steps S105, S205), and an irradiation process (steps S106, S206). In the holding process (steps S101, S201), a substrate (wafer W) with a resist film on its surface is held horizontally within a sealed processing space S. In the immersion process (steps S104, S204), a chemical solution is supplied to the processing space S to immerse the substrate (wafer W) in the solution. In the pressurizing process (steps S105, S205), the processing space S is pressurized to a pressure higher than atmospheric pressure. In the irradiation process (steps S106, S206), the substrate (wafer W) in the chemical solution is irradiated with light with a wavelength of 350 nm to 600 nm. Therefore, the wafer W can be efficiently processed using a chemical solution such as ozone water L.

[0203] Furthermore, in the substrate processing method according to the embodiment, a pressurization process (steps S105 and S205) is performed by a pump 164 that supplies the chemical solution into the processing space S. As a result, the manufacturing cost of the processing unit 16 can be reduced.

[0204] Furthermore, in the substrate processing method described in the embodiment, a pressurization process (steps S105 and S205) is performed by pressurizing and supplying a chemical solution into the processing space S at a pressure of 0.1 MPa to 0.8 MPa using a pump 164. This allows for efficient and stable processing of the wafer W using a chemical solution such as ozone water L.

[0205] Furthermore, in the substrate processing method according to the embodiment, a pressurization process (steps S105 and S205) is performed by supplying pressurized gas into the processing space S. This allows for a simple implementation of the pressurization process in the processing space S.

[0206] Furthermore, in the substrate processing method described in the embodiments, the gas is nitrogen, dry air, oxygen, or ozone. This allows for low-cost pressurization of the processing space S, or efficient processing of the wafer W using ozone water L.

[0207] Furthermore, in the substrate processing method described in the embodiment, a pressurization process (steps S105 and S205) is performed by pressurizing and supplying gas into the processing space S at a pressure of 0.1 MPa to 0.8 MPa. This allows for efficient and stable processing of the wafer W using solutions such as ozone water L.

[0208] Furthermore, in the substrate processing method according to the embodiment, a pressurization process (steps S105 and S205) is performed by continuously supplying at least one of a pressurized liquid and a pressurized gas into the processing space. This allows for the stable implementation of liquid processing using a liquid such as ozone water.

[0209] Furthermore, the substrate processing method according to the embodiment includes a sealing process (steps S103 and S203) to seal the processing space before the pressurization process (steps S105 and S205). Additionally, an irradiation process (steps S106 and S206) is performed after the sealing process (steps S103 and S203), the impregnation process (steps S104 and S204), and the pressurization process (steps S105 and S205). This ensures that the processing performance of the chemical solution is well maintained.

[0210] Furthermore, in the substrate processing method described in the embodiments, the chemical solution is ozone water L, SC1, SC2, hydrogen peroxide water, dilute hydrofluoric acid, phosphoric acid, sulfuric acid, SPM, a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water. Therefore, the wafer W can be processed efficiently using the chemical solution.

[0211] Furthermore, in the substrate processing method described in the embodiment, the chemical solution is ozone water L. Additionally, the concentration of ozone gas dissolved in ozone water L is between 10 ppm and 300 ppm. Therefore, wafer W can be processed more efficiently using ozone water L.

[0212] The embodiments of this disclosure have been described above, but this disclosure is not limited to the above embodiments. Various changes can be made as long as they do not depart from its spirit.

[0213] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0214] Explanation of reference numerals in the attached figures

[0215] W: Wafer (an example of a substrate); 1: Substrate processing system (an example of a substrate processing apparatus); 16: Processing unit; 18: Control unit; 30: Substrate processing unit; 31: Container member; 31a: Substrate holding unit; 31b: Blocking member; 31c: Opening; 34: Heater; 40: Sealing unit; 41: Cover member; 43: Rotating lifting mechanism (an example of a lifting mechanism); 45: Gas nozzle; 46: Gas supply unit; 47: Liquid nozzle; 50: Liquid supply unit; 164: Pump; L: Ozone water (an example of a pharmaceutical solution); S: Processing space.

Claims

1. A substrate processing method, comprising the following steps: The holding process involves holding the substrate with a resist film on its surface horizontally within a sealed processing space. In the immersion process, a chemical solution is supplied into the processing space to immerse the substrate in the chemical solution; The pressurization process involves pressurizing the processing space to a pressure higher than atmospheric pressure. as well as In the irradiation process, the substrate in the liquid medicine is irradiated with light of wavelength 350nm to 600nm.

2. The substrate processing method according to claim 1, wherein, The pressurization process is performed using a pump for supplying the liquid medicine into the processing space.

3. The substrate processing method according to claim 2, wherein, The pressurization process is performed by supplying the drug solution to the processing space at a pressure of 0.1 MPa to 0.8 MPa using the pump.

4. The substrate processing method according to any one of claims 1 to 3, wherein, The pressurization process is performed by supplying pressurized gas into the processing space.

5. The substrate processing method according to claim 4, wherein, The gas is nitrogen, dry air, oxygen, or ozone.

6. The substrate processing method according to claim 4, wherein, The pressurization process is performed by supplying the gas to the processing space at a pressure of 0.1 MPa to 0.8 MPa.

7. The substrate processing method according to any one of claims 1 to 3, wherein, The pressurization process is performed by continuously supplying at least one of the pressurized liquid medicine and the pressurized gas into the processing space.

8. The substrate processing method according to any one of claims 1 to 3, wherein, Prior to the pressurization process, a sealing process is included to enclose the processing space. The irradiation process is performed after the sealing process, the impregnation process, and the pressurization process.

9. The substrate processing method according to any one of claims 1 to 3, wherein, The solution is ozone water, a mixture of ammonia and hydrogen peroxide water (SC1), a mixture of hydrochloric acid and hydrogen peroxide water (SC2), hydrogen peroxide water (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), a mixture of sulfuric acid and hydrogen peroxide water (SPM), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

10. The substrate processing method according to any one of claims 1 to 3, wherein, The solution is ozone water. The dissolved concentration of ozone gas in the ozone water is 10 ppm to 300 ppm.

11. A substrate processing apparatus comprising: A container component having a substrate holding portion for horizontally holding a substrate and a processing space for processing the substrate, the container component being configured to be rotatable; A cover member configured to seal the opening of the container member; A light source is disposed on the cover member and irradiates light onto the substrate held by the substrate holding portion; A gas nozzle is disposed on the cover member and supplies pressurized gas from the bottom surface of the cover member; A liquid nozzle that supplies liquid medicine into the container component; as well as The control department controls all other departments. The control unit performs the following controls: The substrate with a resist film on its surface is held by the substrate holding portion. A chemical solution is supplied into the processing space to immerse the substrate in the chemical solution. Pressurized gas is supplied from the gas nozzle to pressurize the processing space sealed by the cover member to a pressure higher than atmospheric pressure. Light with a wavelength of 350 nm to 600 nm is irradiated onto the substrate in the liquid medicine from the light source.

12. The substrate processing apparatus according to claim 11, wherein, The liquid nozzle is disposed on the cover member.

13. The substrate processing apparatus according to claim 11 or 12, wherein, The cover member is configured to retract from the opening of the container member, and the cover member has a lifting mechanism.

14. The substrate processing apparatus according to claim 11 or 12, wherein, The substrate holding section has a heater for heating the substrate.

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