Non-magnetic metering detection circuit and system
By configuring the microcontroller unit and the reference voltage generation unit, multi-mode compatibility of the non-magnetic metering and detection circuit is achieved, which solves the problem of insufficient flexibility caused by the single hardware design in the prior art and improves the applicability and flexibility of the circuit.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CORE WING INFORMATION TECHNOLOGY (SHANGHAI) CO LTD
- Filing Date
- 2026-01-20
- Publication Date
- 2026-04-14
AI Technical Summary
Existing non-magnetic metering and detection circuit designs lack flexibility and are difficult to adapt to the differentiated needs of different detection methods. This results in the need to redesign the hardware every time the detection mode is changed, increasing the development cycle and cost.
Design a non-magnetic metering and detection circuit. Through the configuration of a microcontroller unit and a reference voltage generation unit, it can achieve compatibility of multiple detection modes, match the working state of each detection channel with the target detection mode, and adjust the peripheral hardware and software configuration to adapt to different application scenarios.
This achieves flexibility in non-magnetic metering and detection circuits, enabling them to adapt to various detection schemes without changing the chip design, meeting the differentiated needs of different users, and improving the versatility and applicability of the circuit.
Smart Images
Figure CN121855643A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of integrated circuit technology, and in particular to a non-magnetic metering and detection circuit and system. Background Technology
[0002] Magnetic sensing technology is one of the core technologies in modern fluid metering, playing a crucial role in the precise measurement of fluids such as liquids and gases. This technology is typically based on the principle of electromagnetic induction, achieving measurement by detecting changes in the magnetic field caused by the movement of a metal component driven by the fluid. In practical applications, a typical system consists of a coil and a metal semi-circular plate that moves with the fluid. Combined with backend processing circuitry, the alternating signal of the magnetic field around the coil is converted into a recognizable electrical signal. This non-contact measurement method provides a stable and reliable solution for metering instruments such as smart water meters and gas meters.
[0003] In existing technologies, the conversion of magnetic signals into electrical signals includes various methods such as diode detection, transistor detection, LC oscillation frequency detection, and LC oscillation pulse count detection. Based on the source of the excitation signal, these can be further categorized into self-excitation and external excitation operating modes. However, existing technologies generally suffer from insufficient versatility. Each circuit design typically targets only a specific detection method or excitation mode. This singular design approach results in a lack of debuggability and flexibility, making it difficult to adapt to the diverse detection requirements of different customers or application scenarios. Changing the detection mode necessitates redesigning the hardware, particularly the chip selection, which not only increases development time and cost but also limits the product's application scope.
[0004] Therefore, how to design a general-purpose non-magnetic metering and detection circuit that can be flexibly configured and compatible with multiple detection schemes on a single hardware platform has become an urgent technical problem to be solved. Summary of the Invention
[0005] In view of this, this application provides a non-magnetic metrology detection circuit and system. This application provides a general-purpose non-magnetic metrology detection circuit that can be flexibly configured and is compatible with multiple detection schemes on a single hardware platform. For different application scenarios, there is no need to change the chip design of the non-magnetic metrology detection circuit. By modifying the peripheral hardware and microcontroller unit and changing the software configuration, the operating state of each detection channel can be matched with the target detection mode, improving the circuit's flexibility and making it suitable for different application scenarios, meeting the differentiated non-magnetic metrology detection needs of different users.
[0006] In a first aspect, this application provides a non-magnetic metering and detection circuit, comprising: Multiple detection channels, microcontroller unit, and reference voltage generation unit. Each of the detection channels is connected to an external detection unit, the microcontroller unit, and the reference voltage generation unit. Each detection channel is used to convert a single-channel analog detection signal corresponding to the target detection mode received from the external detection unit into a single-channel digital detection signal, and output the single-channel digital detection signal to the microcontroller unit. The reference voltage generation unit is used to generate a reference voltage; The microcontroller unit is configured to: control the reference voltage generation unit to generate a corresponding reference voltage according to the input target detection mode; configure the relevant parameters of each detection channel according to the target detection mode so that the working state of each detection channel matches the target detection mode; and obtain the non-magnetic measurement result according to the input single-channel digital detection signal.
[0007] In one possible implementation of the first aspect, each of the detection channels includes a detection interface, a configurable impedance network, and an analog-to-digital converter. In this configuration, the first end of the configurable impedance network of each detection channel is connected to the detection interface, the second end of the configurable impedance network of each detection channel is connected to the reference voltage generation unit, the third end of the configurable impedance network of each detection channel is connected to the analog-to-digital conversion unit, and the fourth end of the configurable impedance network of each detection channel is grounded.
[0008] In one possible implementation of the first aspect, the configurable impedance network includes a charging resistor, a discharging resistor, and an integrating capacitor, wherein the charging resistor is connected between the second and third terminals of the configurable impedance network, the discharging resistor is connected between the third and fourth terminals of the configurable impedance network, and the integrating capacitor is connected between the first and fourth terminals of the configurable impedance network. Furthermore, the relevant parameters of the detection channel include the resistance values of the charging resistor and the discharging resistor, as well as the capacitance value of the integrating capacitor.
[0009] In one possible implementation of the first aspect, the analog-to-digital conversion unit includes a comparator and a filter, a first input terminal of the comparator being connected to the configurable impedance network, a second input terminal of the comparator being connected to the reference voltage generation unit, and an output terminal of the comparator being connected to the filter; the filter is connected between the output terminal of the comparator and the input terminal of the microcontroller unit.
[0010] In one possible implementation of the first aspect, the analog-to-digital conversion unit includes a unity-gain buffer and an analog-to-digital converter, the input of the unity-gain buffer being connected to the detection interface, and the output of the unity-gain buffer being connected to the analog-to-digital converter; the analog-to-digital converter is connected between the output of the unity-gain buffer and the input of the microcontroller unit.
[0011] In one possible implementation of the first aspect, the analog-to-digital conversion unit includes a variable gain amplifier and an analog-to-digital converter, the input of the variable gain amplifier being connected to the detection interface, and the output of the variable gain amplifier being connected to the analog-to-digital converter; the analog-to-digital converter is connected between the output of the variable gain amplifier and the input of the microcontroller unit.
[0012] In one possible implementation of the first aspect, the target detection mode includes at least one of a diode self-excited detection mode, a transistor externally excited detection mode, and an LC oscillation pulse counting detection mode.
[0013] In one possible implementation of the first aspect, a triggering unit is further included, connected to the microcontroller and the external detection unit, for triggering the external detection unit to perform detection.
[0014] In a second aspect, this application provides a non-magnetic metrology detection system, including: a non-magnetic metrology detection circuit as described in the first aspect and any possible implementation of the first aspect, and an external detection unit; The external detection unit includes multiple resonant circuits, and each resonant circuit is connected to a detection interface of the non-magnetic metering detection circuit. The microcontroller unit is configured to: control the non-magnetic metering detection circuit to apply excitation to each resonant circuit of the external detection unit according to the target detection mode, so that each resonant circuit detects the position change information of the metal target on the rotor under test by electromagnetic induction, and control each resonant circuit to convert the position change information into a single-channel analog detection signal and output it to the corresponding detection channel, and control each detection channel to convert the single-channel analog detection signal into a single-channel digital detection signal, and obtain the non-magnetic metering result based on each single-channel digital detection signal. In one possible implementation of the second aspect, the target detection mode is an LC oscillation pulse counting detection mode, and the external detection unit further includes multiple resistors connected between each resonant circuit and the corresponding detection channel, wherein each resistor corresponds one-to-one with each resonant circuit.
[0015] In one possible implementation of the second aspect, the target detection mode is a diode self-excited detection mode, and the external detection unit further includes multiple diodes, wherein each diode corresponds one-to-one with a resonant circuit, the anode of the diode is connected to a detection interface, and the cathode of the diode is connected to the resonant circuit.
[0016] In one possible implementation of the second aspect, the target detection mode is a transistor external excitation detection mode. The external detection unit further includes multiple transistors, wherein each transistor corresponds one-to-one with a resonant circuit. The base of the transistor is connected to a resonant circuit, the collector of the transistor is connected to a detection channel, the emitter of the transistor is grounded through a resistor network, and the emitter of the transistor is connected to the general input / output interface of the non-magnetic metering detection circuit through a resistor-capacitor network. Compared with the prior art, the beneficial effects of this application are as follows: In the non-magnetic metering detection circuit provided in this application, each detection channel is connected to an external detection unit, a microcontroller unit, and a reference voltage generation unit. Each detection channel is used to convert the single-channel analog detection signal corresponding to the target detection mode received from the external detection unit into a single-channel digital detection signal, and output the single-channel digital detection signal to the microcontroller unit. This allows the microcontroller unit to receive the single-channel digital detection signal corresponding to the target detection mode, thereby quickly calculating the non-magnetic metering result based on the single-channel digital detection signals received from each detection channel. Because the microcontroller is configured to: control the reference voltage generation unit to generate a corresponding reference voltage according to the input target detection mode; configure the relevant parameters of each detection channel according to the target detection mode so that the working state of each detection channel matches the target detection mode; and obtain the non-magnetic measurement result according to the input single-channel digital detection signal, the non-magnetic measurement detection circuit can be matched with the target detection mode by modifying the peripheral hardware and changing the software configuration of the microcontroller, without changing the chip design of the non-magnetic measurement detection circuit for different application scenarios. This improves the flexibility of the circuit, making it suitable for different application scenarios and meeting the differentiated non-magnetic measurement detection needs of different users. This allows the non-magnetic measurement detection circuit provided in this application to be flexibly configured and compatible with multiple detection schemes on a single hardware platform. Attached Figure Description
[0017] Figure 1 According to some embodiments of this application, a non-magnetic metering detection circuit is shown; Figure 2 According to some embodiments of this application, a structural block diagram of a non-magnetic metrology and detection system is shown; Figure 3 According to some embodiments of this application, a circuit diagram of a non-magnetic metering and detection system is shown; Figure 4 According to some embodiments of this application, a circuit diagram of another non-magnetic metering and detection system is shown; Figure 5 According to some embodiments of this application, a circuit diagram of another non-magnetic metering and detection system is shown. Detailed Implementation
[0018] The illustrative embodiments of this application include, but are not limited to, a non-magnetic metering detection circuit and system.
[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0020] Figure 1 According to some embodiments of this application, a non-magnetic metering detection circuit 10 is shown, with reference to... Figure 1 The non-magnetic metering detection circuit 10 includes multiple detection channels 100, a microcontroller unit 15, and a reference voltage generation unit 14. The number of detection channels 100 is at least two, generally three, and may exceed three in special applications. In practical applications, those skilled in the art can determine the number based on actual needs. Since three detection channels can meet both metering and direction determination requirements in most liquid or gas metering applications, the technical solution of this application will be illustrated below using a three-channel non-magnetic metering detection circuit as an example.
[0021] Each detection channel 100 is connected to an external detection unit ( Figure 1 (Not shown in the image), microcontroller unit 15, and reference voltage generation unit 14. Reference Figure 1 The first detection channel 11 is connected to the microcontroller unit 15 and the reference voltage generation unit 14; the second detection channel 12 is connected to the microcontroller unit 15 and the reference voltage generation unit 14; and the third detection channel 13 is connected to the microcontroller unit 15 and the reference voltage generation unit 14. Each detection channel 100 is used to convert a single-channel analog detection signal corresponding to the target detection mode received from an external detection unit into a single-channel digital detection signal, and output the single-channel digital detection signal to the microcontroller unit 15.
[0022] Here, the single-channel analog detection signal refers to the analog signal detected by each detection channel, while the single-channel digital detection signal refers to the digital signal obtained by analog-to-digital conversion of the analog signal detected by each detection channel. Both the single-channel analog detection signal and the single-channel digital detection signal carry information about the positional change of the metal target on the rotor under test, thus enabling the microcontroller unit 15 to calculate the non-magnetic measurement result based on the single-channel digital detection signal output by each detection channel.
[0023] The reference voltage generation unit 14 is used to generate a reference voltage. The microcontroller unit 15 is configured to: control the reference voltage generation unit 14 to generate a corresponding reference voltage according to the input target detection mode; configure the relevant parameters of each detection channel according to the target detection mode so that the working state of each detection channel matches the target detection mode; and obtain the non-magnetic measurement result according to the input single-channel digital detection signal.
[0024] because Figure 1 In the non-magnetic metering detection circuit 10 shown, each detection channel 100 is connected to an external detection unit, a microcontroller unit 15, and a reference voltage generation unit 14. Each detection channel 100 is used to convert the single-channel analog detection signal corresponding to the target detection mode received from the external detection unit into a single-channel digital detection signal, and output the single-channel digital detection signal to the microcontroller unit 15, so that the microcontroller unit 15 can receive the single-channel digital detection signal corresponding to the target detection mode, and thus quickly calculate the non-magnetic metering result based on the single-channel digital detection signal received from each detection channel 100.
[0025] Furthermore, the microcontroller unit 15 is configured to: control the reference voltage generation unit 14 to generate a corresponding reference voltage according to the input target detection mode; configure the relevant parameters of each detection channel 100 according to the target detection mode so that the working state of each detection channel 100 matches the target detection mode; and obtain the non-magnetic measurement result based on the input single-channel digital detection signal. Therefore, for different application scenarios, without changing the on-chip hardware design of the non-magnetic measurement detection circuit 10, the microcontroller unit 15 can change the software configuration of the non-magnetic measurement detection circuit 10 to match the working state of each detection channel 100 with the target detection mode, improving the flexibility of the non-magnetic measurement detection circuit 10, making it suitable for different application scenarios, and meeting the differentiated non-magnetic measurement detection needs of different users.
[0026] In some embodiments, each detection channel 100 includes a detection interface, a configurable impedance network, and an analog-to-digital converter (ADC). Specifically, the first end of the configurable impedance network of each detection channel 100 is connected to the detection interface, the second end of the configurable impedance network of each detection channel is connected to the reference voltage generation unit 14, the third end of the configurable impedance network of each detection channel is connected to the ADC, and the fourth end of the configurable impedance network of each detection channel is grounded.
[0027] Specifically, refer to Figure 1 The first detection channel 11 includes a first detection interface 110, a first configurable impedance network 111, and a first analog-to-digital converter unit 112. Specifically, the first end 1111 of the first configurable impedance network 111 is connected to the first detection interface 110, the second end 1112 of the first configurable impedance network 111 is connected to the reference voltage generation unit 14, the third end 1113 of the first configurable impedance network 111 is connected to the first analog-to-digital converter unit 112, and the fourth end 1114 of the first configurable impedance network 111 is grounded.
[0028] The second detection channel 12 includes a second detection interface 120, a second configurable impedance network 121, and a second analog-to-digital converter unit 122. Specifically, the second end 1211 of the second configurable impedance network 121 is connected to the second detection interface 120, the second end 1212 of the second configurable impedance network 121 is connected to the reference voltage generation unit 14, the third end 1213 of the second configurable impedance network 121 is connected to the second analog-to-digital converter unit 122, and the fourth end 1214 of the second configurable impedance network 121 is grounded.
[0029] The third detection channel 13 includes a third detection interface 130, a third configurable impedance network 131, and a third analog-to-digital converter unit 132. Specifically, the third terminal 1311 of the third configurable impedance network 131 is connected to the third detection interface 130, the second terminal 1312 of the third configurable impedance network 131 is connected to the reference voltage generation unit 14, the third terminal 1313 of the third configurable impedance network 131 is connected to the third analog-to-digital converter unit 132, and the fourth terminal 1314 of the third configurable impedance network 131 is grounded.
[0030] The configurable impedance network includes a charging resistor, a discharging resistor, and an integrating capacitor. The charging resistor is connected between the second and third terminals of the configurable impedance network, the discharging resistor is connected between the third and fourth terminals, and the integrating capacitor is connected between the first and fourth terminals. Furthermore, the relevant parameters of the detection channel include the resistance values of the charging and discharging resistors, and the capacitance value of the integrating capacitor.
[0031] Specifically, refer to Figure 1The first configurable impedance network 111 includes a first charging resistor Rch[1], a first discharging resistor Rdch[1], and a first integrating capacitor Cint[1]. The first charging resistor Rch[1] is connected between the second terminal 1112 and the third terminal 1113 of the first configurable impedance network 111. The first discharging resistor Rdch[1] is connected between the third terminal 1113 and the fourth terminal 1114 of the first configurable impedance network 111. The first integrating capacitor Cint[1] is connected between the first terminal 1111 and the fourth terminal 1114 of the first configurable impedance network 111. The relevant parameters of the first detection channel 11 include the resistance values of the first charging resistor Rch[1] and the first discharging resistor Rdch[1], and the capacitance value of the first integrating capacitor Cint[1].
[0032] The second configurable impedance network 121 includes a second charging resistor Rch[2], a second discharging resistor Rdch[2], and a second integrating capacitor Cint[2]. The second charging resistor Rch[2] is connected between the second terminal 1212 and the third terminal 1213 of the second configurable impedance network 121. The second discharging resistor Rdch[2] is connected between the third terminal 1213 and the fourth terminal 1214 of the second configurable impedance network 121. The second integrating capacitor Cint[2] is connected between the second terminal 1211 and the fourth terminal 1214 of the second configurable impedance network 121. The relevant parameters of the second detection channel 12 include the resistance values of the second charging resistor Rch[2] and the second discharging resistor Rdch[2], and the capacitance value of the second integrating capacitor Cint[2].
[0033] The third configurable impedance network 131 includes a third charging resistor Rch[3], a third discharging resistor Rdch[3], and a third integrating capacitor Cint[3]. The third charging resistor Rch[3] is connected between the second terminal 1312 and the third terminal 1313 of the third configurable impedance network 131. The third discharging resistor Rdch[3] is connected between the third terminal 1313 and the fourth terminal 1314 of the third configurable impedance network 131. The third integrating capacitor Cint[3] is connected between the third terminal 1311 and the fourth terminal 1314 of the third configurable impedance network 131. The relevant parameters of the third detection channel 13 include the resistance values of the third charging resistor Rch[3] and the third discharging resistor Rdch[3], and the capacitance value of the third integrating capacitor Cint[3].
[0034] In some embodiments, the analog-to-digital conversion unit includes a comparator and a filter. The first input of the comparator is connected to a configurable impedance network, the second input of the comparator is connected to a reference voltage generation unit 14, and the output of the comparator is connected to the filter. The filter is connected between the output of the comparator and the input of the microcontroller unit 15.
[0035] Specifically, refer to Figure 1 The first analog-to-digital conversion unit 112 includes a first comparator 1121 and a first filter 1122. The first input terminal 1123 of the first comparator 1121 is connected to the first configurable impedance network 111. The second input terminal 1124 of the first comparator 1121 is connected to the reference voltage generation unit 14. The output terminal 1125 of the first comparator 1121 is connected to the first filter 1122. The first filter 1122 is connected between the output terminal 1125 of the first comparator 1121 and the first input terminal 151 of the microcontroller unit 15.
[0036] The second analog-to-digital converter unit 122 includes a second comparator 1221 and a second filter 1222. The first input terminal 1223 of the second comparator 1221 is connected to the second configurable impedance network 121. The second input terminal 1224 of the second comparator 1221 is connected to the reference voltage generation unit 14. The output terminal 1225 of the second comparator 1221 is connected to the second filter 1222. The second filter 1222 is connected between the output terminal 1225 of the second comparator 1221 and the second input terminal 152 of the microcontroller unit 15.
[0037] The third analog-to-digital converter unit 132 includes a third comparator 1321 and a third filter 1322. The first input terminal 1323 of the third comparator 1321 is connected to the third configurable impedance network 131. The second input terminal 1324 of the third comparator 1321 is connected to the reference voltage generation unit 14. The output terminal 1325 of the third comparator 1321 is connected to the third filter 1322. The third filter 1322 is connected between the output terminal 1325 of the third comparator 1321 and the third input terminal 153 of the microcontroller unit 15.
[0038] In some embodiments, the analog-to-digital conversion unit includes a unity-gain buffer and an analog-to-digital converter (not shown). The input of the unity-gain buffer is connected to a detection interface (not shown), and the output of the unity-gain buffer is connected to the analog-to-digital converter (not shown). The analog-to-digital converter is connected between the output of the unity-gain buffer and the input of the microcontroller unit 15 (not shown).
[0039] In other embodiments, the analog-to-digital conversion unit includes a variable gain amplifier and an analog-to-digital converter (not shown), with the input of the variable gain amplifier connected to a detection interface (not shown) and the output of the variable gain amplifier connected to the analog-to-digital converter (not shown); the analog-to-digital converter is connected between the output of the variable gain amplifier and the input of the microcontroller unit 15 (not shown).
[0040] In some embodiments, the target detection mode includes at least one of a diode self-excited detection mode, a transistor externally excited detection mode, and an LC oscillation pulse counting detection mode. For example, in some embodiments, the target detection mode includes two of the diode self-excited detection mode, the transistor externally excited detection mode, and the LC oscillation pulse counting detection mode. In other embodiments, the target detection mode includes a diode self-excited detection mode, a transistor externally excited detection mode, and an LC oscillation pulse counting detection mode.
[0041] refer to Figure 1 The non-magnetic metering detection circuit 10 also includes a trigger unit 16, which is connected to the microcontroller 15 and an external detection unit (not shown) to trigger the external detection unit to perform detection.
[0042] The following is about Figure 1 The symbols for each pin and component are explained.
[0043] Continue to refer to Figure 1 Among them, the chip package pins DAIO[4:1] are digital-analog multiplexed input / output channels, and the chip package pins DAIO[3:1] correspond to the first detection interface 110, the second detection interface 120 and the third detection interface 130 respectively. They are used to receive the current or voltage signal carrying the position change information of the metal target on the rotor under test after being processed by the external detection unit, and transmit it to the comparator CMP[3:1] or GPIO[3:1]. The comparator CMP[3:1] here refers to the first comparator 1121, the second comparator 1221 and the third comparator 1321 mentioned above. The current or voltage signal here refers to the single-channel analog detection signal mentioned above. The position change information here can also be called rotor rotation information.
[0044] The electrical state of DAIO[4] is responsible for outputting the reference voltage Vref[4] for use by external components or is directly controlled by GPIO[4]. For example, in the diode self-excitation detection mode, DAIO[4] is controlled by GPIO[4]; in the transistor external excitation detection mode, DAIO[4] is controlled by GPIO[4]; and in the LC oscillation pulse counting detection mode, the output Vref[4] of the reference voltage generation unit 14 is controlled.
[0045] GPIO[7:1] is a general-purpose input / output interface unit, which has push-pull output, open-drain output, open-drain input, weak pull-up, weak pull-down and floating functions, and is directly controlled by the microcontroller unit 15.
[0046] CMP[3:1] is a comparator responsible for converting the voltage or current signal on DAIO[3:1] into a pulse signal or pulse width signal. Filter[3:1] is a filter used to filter out glitches caused by external interference or circuit noise, thereby improving detection accuracy.
[0047] Cint[3:1] is an on-chip capacitor, and its value can be configured differently in different detection modes. The minimum value can be 0F, meaning there is an open circuit between Cint[3:1] and DAIO[3:1]. Rch[3:1] is a charging resistor, and Rdch[3:1] is a discharging resistor. Their resistance values can be configured differently in different detection modes, with a maximum value of infinity. When the resistance value of the charging resistor Rch[3:1] is configured to infinity, there is an open circuit between Rch[3:1] and DAIO[3:1]. When the resistance value of the discharging resistor Rdch[3:1] is configured to infinity, there is an open circuit between Rdch[3:1] and DAIO[3:1].
[0048] The MCU is an on-chip microcontroller unit, namely the microcontroller unit 15, which is responsible for receiving the output signal of the Filter [3:1] and processing the output signal of the Filter [3:1] according to the preset measurement algorithm to obtain the non-magnetic measurement result.
[0049] The Reference Generator is the reference voltage generation unit 14, which is responsible for generating the comparator's reference voltage Vref[3:1], the initial voltage or reset voltage Vref[0] of DAIO[3:1], and the reference voltage Vref[4] for use by external components. DIO[7:5] are digital input / output (I / O) ports, controlled by GPIO[7:5], and are responsible for triggering external probe elements (also known as external probe units) to perform probes and precisely controlling the timing.
[0050] Furthermore, this application embodiment also provides a non-magnetic metering and detection system 20, with reference to... Figure 2 The non-magnetic metering and detection system 20 provided in this application includes a non-magnetic metering and detection circuit 10 and an external detection unit 30.
[0051] The external detection unit 30 includes two or more resonant circuits 300, each resonant circuit 300 being connected to a detection interface of the non-magnetic metering detection circuit 10. Specifically, refer to... Figure 2The first resonant circuit 301 is connected to the first detection interface 110 of the non-magnetic metering detection circuit 10; the second resonant circuit 302 is connected to the second detection interface 120 of the non-magnetic metering detection circuit 10; and the third resonant circuit 303 is connected to the third detection interface 130 of the non-magnetic metering detection circuit 10. The non-magnetic metering detection circuit 10 also includes GPIO[7:1], all of which are connected to the microcontroller unit 15. GPIO[1] is connected to the first detection interface 110, GPIO[2] is connected to the second detection interface 120, and GPIO[3] is connected to the third detection interface 130.
[0052] In some embodiments, the microcontroller unit 15 is configured to: control the non-magnetic metering detection circuit 10 to apply excitation to each resonant circuit 300 of the external detection unit 30 according to the target detection mode, so that each resonant circuit 300 detects the position change information of the metal target on the target rotor under test by electromagnetic induction, and control each resonant circuit 300 to convert the position change information into a single-channel analog detection signal and output it to the corresponding detection channel 100, and control each detection channel 100 to convert the single-channel analog detection signal into a single-channel digital detection signal, and obtain the non-magnetic metering result based on each single-channel digital detection signal.
[0053] To better understand the technical solution of this application, the following will be combined with... Figures 3 to 5 A detailed introduction is given to the non-magnetic metrology and detection system 20 under different detection modes.
[0054] Figure 3 According to some embodiments of this application, a circuit diagram of a non-magnetic metering and detection system 20 with a target detection mode of diode self-excitation detection mode is shown.
[0055] When the target detection mode is a diode self-excited detection mode, the external detection unit 30 also includes multiple diodes, each corresponding to a resonant circuit. The anode of the diode is connected to a detection interface, and the cathode of the diode is connected to the resonant circuit. Specifically, refer to... Figure 3 The anode of diode D[1] is connected to the first detection interface 110, and the cathode of diode D[1] is connected to the first resonant circuit 301 and DIO[5]; the anode of diode D[2] is connected to the second detection interface 120, and the cathode of diode D[2] is connected to the second resonant circuit 302 and DIO[6]; the anode of diode D[3] is connected to the third detection interface 130, and the cathode of diode D[3] is connected to the third resonant circuit 303 and DIO[7]. The ends of parallel resonant circuits LC[1], LC[2], and LC[3] furthest from the diodes are connected to DAIO[4].
[0056] Figure 4According to some embodiments of this application, a circuit diagram of a non-magnetic metering and detection system 20 with a target detection mode of transistor external excitation detection mode is shown.
[0057] In the case of the target detection mode being the transistor external excitation detection mode, the external detection unit 30 also includes multiple transistors, wherein each transistor corresponds to a resonant circuit, the base of the transistor is connected to a resonant circuit, the collector of the transistor is connected to a detection channel, and the emitter of the transistor is grounded. Specifically, the emitter of the transistor is connected to ground through a resistor network and connected to GPIO[5] through a resistor-capacitor network.
[0058] refer to Figure 4 The base of transistor B1 is connected to resistor R31 and the first resonant circuit 301 in sequence. The collector of transistor B1 is connected to the first detection channel 11. The emitter of transistor B1 is grounded through a resistor network consisting of resistors R34, R37 and R38. The emitter of transistor B1 is connected to GPIO in sequence through a resistor-capacitor network consisting of resistors R34, R37 and C30 [5]. The base of transistor B2 is connected to resistor R32 and the second resonant circuit 302 in sequence. The collector of transistor B2 is connected to the second detection channel 12. The emitter of transistor B2 is grounded through a resistor network consisting of resistors R35, R37 and R38. The emitter of transistor B2 is connected to GPIO in sequence through a resistor-capacitor network consisting of resistors R35, R37 and C30 [5]. The base of transistor B3 is connected to resistor R33 and the third resonant circuit 303 in sequence. The collector of transistor B3 is connected to the third detection channel 13. The emitter of transistor B3 is grounded through a resistor network consisting of resistors R36, R37 and R38. The emitter of transistor B3 is connected to GPIO in sequence through a resistor-capacitor network consisting of resistors R36, R37 and C30 [5].
[0059] refer to Figure 4 The external detection unit 30 also includes an LC parallel circuit 304 and a capacitor C30. The LC parallel circuit 304 is connected to DAIO[4], and the capacitor C30 is connected between the resistor R38 and DIO[5].
[0060] Figure 5 According to some embodiments of this application, a circuit diagram of a non-magnetic metering detection system 20 with a target detection mode of LC oscillation pulse counting detection mode is shown.
[0061] refer to Figure 5The external detection unit 30 includes a first resonant circuit 301, a second resonant circuit 302, and a third resonant circuit 303. The first resonant circuit 301 is connected to the first detection interface 110 of the non-magnetic metering detection circuit 10; the second resonant circuit 302 is connected to the second detection interface 120 of the non-magnetic metering detection circuit 10; and the third resonant circuit 303 is connected to the third detection interface 130 of the non-magnetic metering detection circuit 10. Each of the first, second, and third resonant circuits includes an LC parallel resonant circuit. Specifically, the first resonant circuit 301 includes an LC parallel resonant circuit LC[1], the second resonant circuit 302 includes an LC parallel resonant circuit LC[2], and the third resonant circuit 303 includes an LC parallel resonant circuit LC[3]. The capacitor and inductor in the LC parallel resonant circuit are connected in parallel, which can generate a resonance phenomenon.
[0062] In some embodiments, the external detection unit 30 further includes a plurality of resistors connected between each resonant circuit 300 and the corresponding detection channel 100, wherein each resistor corresponds one-to-one with each resonant circuit. Specifically, refer to Figure 5 The external detection unit 30 also includes a resistor R11 connected between the first resonant circuit 301 and the first detection channel 11, a resistor R12 connected between the second resonant circuit 302 and the second detection channel 12, and a resistor R13 connected between the third resonant circuit 303 and the third detection channel 13. One end of the resistor R11 is connected to the parallel resonant circuit LC[1], and the other end is connected to the first detection interface 110 and DIO[5]; one end of the resistor R12 is connected to the parallel resonant circuit LC[2], and the other end is connected to the second detection interface 120 and DIO[6]; one end of the resistor R13 is connected to the parallel resonant circuit LC[3], and the other end is connected to the third detection interface 130 and DIO[7]. One end of the parallel resonant circuit LC[1], the parallel resonant circuit LC[2], and the parallel resonant circuit LC[3] are respectively connected to the corresponding resistors, and the other end is connected to DAIO[4].
[0063] The following will be combined with Figure 3 , Figure 4 and Figure 5 Detailed introduction Figures 3 to 5 The working principle of the three detection modes.
[0064] Firstly, regarding Figure 3 The non-magnetic metering and detection system 20 shown has a target detection mode of diode self-excitation detection mode. The entire detection process is divided into three stages: pre-charging stage, triggering stage and measurement stage.
[0065] During the pre-charging phase, the microcontroller unit 15 controls the resistance value of the charging resistor Rch[3:1] to a suitable resistance value to ensure that the upper plate of the integrating capacitor Cint[3:1] can be charged to Vref[0] by Rch[3:1] within the specified reset time period, and controls the resistance value of the discharge resistor Rdch[3:1] to be open circuit. DAIO[3:1] is charged to VREF[0] by the reference voltage generation unit 10 respectively, DAIO[4] is charged to VREF[4] by the reference voltage generation unit 10, and DIO[7:1] is in a floating state. It should be noted that at this time, the voltage values of Vref[0] and Vref[4] are the same and much higher than Vref[3:1].
[0066] During the triggering phase, the microcontroller unit 15 controls the resistance value of the charging resistor Rch[3:1] to be adjusted to an open circuit and adjusts the resistance value of the discharging resistor Rdch[3:1] to a suitable value to ensure that in the subsequent measurement phase, the upper plate level of the integrating capacitor Cint[3:1] can be discharged by the resistor Rdch[3:1] to a low value that causes the comparator[3:1] to complete the flip. At this time, the charge on the upper plate of the integrating capacitor Cint[3:1] will slowly decrease from Vref[0] due to the discharge resistor Rdch[3:1]. At the same time, the state of DIO[7:5] will switch from the floating state to the push-pull output low level state. This state lasts for tens of nanoseconds to a few microseconds. Then DIO[7:5] will return to the floating state, and then the measurement phase will begin.
[0067] During the measurement phase, the resonant circuits connected to DIO[7:5] will undergo LC resonance, with the oscillation amplitude gradually decaying. The decay rate is related to the relative position of the resonant circuit LC[3:1] and the metal target on the rotor under test. Due to LC oscillation, diode D[3:1] will periodically conduct, causing it to draw a large amount of charge from the integrating capacitor Cint[3:1]. This results in a rapid decrease in the charge on the upper plate of the integrating capacitor Cint[3:1] after discharge through the discharge resistor Rdch[3:1], leading to a rapid drop in the voltage on the upper plate of the integrating capacitor Cint[3:1]. The rate of voltage drop on the upper plate of the integrating capacitor Cint[3:1] is affected by the conduction current of diode D[3:1], and consequently by the decay rate of the LC oscillation. Therefore, the time it takes for the voltage on the upper plate of the integrating capacitor Cint[3:1] to drop from Vref[0] to Vref[3:1] will also differ. Based on the pulse signals received from the first detection channel 11, the second detection channel 12, and the third detection channel 13, the microcontroller 15 can calculate the relative positional relationship between the inductor coil and the metal target on the rotor of the target to be measured in each resonant circuit according to the difference in pulse width. Based on this relative position, the motion state of the rotor of the target to be measured can be obtained, and then the non-magnetic measurement result can be calculated based on the motion state of the rotor of the target to be measured, thereby realizing fluid measurement.
[0068] against Figure 4 The non-magnetic metering and detection system 20 shown uses a transistor external excitation detection mode for target detection. The entire detection process is divided into three stages: a pre-charging stage, a triggering stage, and a measurement stage. The entire detection process is similar to... Figure 3 The corresponding diode self-excited detection scheme is similar, with the pre-charging and measurement phases operating in essentially the same manner as the aforementioned diode self-excited detection scheme. The main difference lies in the triggering phase. During the triggering phase... Figure 4The DAIO[4] of the non-magnetic metering detection system 20 shown is controlled by GPIO[4]. DIO[5] will switch from the push-pull output high level in the pre-charge stage to the push-pull output low level, outputting a falling edge. At the same time, DAIO[4] will generate a changing edge, thereby generating a voltage difference higher than the threshold voltage between the base and emitter of transistor B[3:1], causing transistor B[3:1] to conduct and generate a large current at the collector. The magnitude and duration of the current are related to the relative position of the resonant circuit LC[3:1] and the metal target on the rotor to be measured. Thus, the microcontroller unit 15 obtains the current signal of the collector of transistor B1 through the first detection channel 11, the current signal of the collector of transistor B2 through the second detection channel 12, and the current signal of the collector of transistor B3 through the third detection channel 13. Based on these obtained current signals, the motion state of the rotor to be measured can be obtained, and the non-magnetic metering result can be calculated based on the motion state of the rotor to achieve fluid metering.
[0069] against Figure 5 The non-magnetic metering and detection system 20 shown uses an LC oscillation pulse counting detection mode for target detection. The detection process is similar to... Figure 3 The corresponding diode self-excited detection scheme is similar. The main difference lies in the measurement stage. Figure 5 The non-magnetic metering detection system 20 shown measures by starting oscillation in the resonant circuit LC[3:1] until the amplitude decays to the point where the comparator CMP[3:1] no longer flips. The number of pulses is related to the relative position of the resonant circuit LC[3:1] and the metal target on the rotor to be measured. Thus, the microcontroller unit 15 can determine the number of pulses corresponding to each resonant circuit based on the single-channel digital detection signals obtained from the first detection channel 11, the second detection channel 12, and the third detection channel 13, thereby obtaining the motion state of the rotor to be measured based on the number of pulses, and further calculating the non-magnetic metering result based on the motion state of the rotor to achieve fluid metering.
[0070] Various embodiments of the mechanisms disclosed in this invention can be implemented in hardware, software, firmware, or combinations of these implementations. Embodiments of this invention can be implemented as computer programs or program code executable on a programmable system, the programmable system including at least one processor, a storage system (including volatile and non-volatile memories and / or storage elements), at least one input device, and at least one output device.
[0071] It should be noted that the units / modules mentioned in the various device embodiments of the present invention are all logical units / modules. Physically, a logical unit / module can be a physical unit / module, a part of a physical unit / module, or a combination of multiple physical units / modules. The physical implementation of these logical units / modules themselves is not the most important factor; the combination of functions implemented by these logical units / modules is the key to solving the technical problem proposed by the present invention. Furthermore, to highlight the innovative aspects of the present invention, the above-described device embodiments of the present invention have not introduced units / modules that are not closely related to solving the technical problem proposed by the present invention. This does not mean that the above-described device embodiments do not contain other units / modules.
[0072] It should be noted that in the examples and description of this patent, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one" does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0073] Although the invention has been illustrated and described with reference to certain preferred embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims
1. A non-magnetic metering and detection circuit, characterized in that, include: Multiple detection channels, microcontroller unit, and reference voltage generation unit; Each of the detection channels is connected to an external detection unit, the microcontroller unit, and the reference voltage generation unit. Each detection channel is used to convert a single-channel analog detection signal corresponding to the target detection mode received from the external detection unit into a single-channel digital detection signal, and output the single-channel digital detection signal to the microcontroller unit. The reference voltage generation unit is used to generate a reference voltage; The microcontroller unit is configured to: control the reference voltage generation unit to generate a corresponding reference voltage according to the input target detection mode; configure the relevant parameters of each detection channel according to the target detection mode so that the working state of each detection channel matches the target detection mode; and obtain the non-magnetic measurement result according to the input single-channel digital detection signal.
2. The non-magnetic metering and detection circuit according to claim 1, characterized in that, Each of the aforementioned detection channels includes a detection interface, a configurable impedance network, and an analog-to-digital converter unit. In this configuration, the first end of the configurable impedance network of each detection channel is connected to the detection interface, the second end of the configurable impedance network of each detection channel is connected to the reference voltage generation unit, the third end of the configurable impedance network of each detection channel is connected to the analog-to-digital conversion unit, and the fourth end of the configurable impedance network of each detection channel is grounded.
3. The non-magnetic metering and detection circuit according to claim 2, characterized in that, The configurable impedance network includes a charging resistor, a discharging resistor, and an integrating capacitor. The charging resistor is connected between the second and third terminals of the configurable impedance network, the discharging resistor is connected between the third and fourth terminals of the configurable impedance network, and the integrating capacitor is connected between the first and fourth terminals of the configurable impedance network. Furthermore, the relevant parameters of the detection channel include the resistance values of the charging resistor and the discharging resistor, as well as the capacitance value of the integrating capacitor.
4. The non-magnetic metering and detection circuit according to claim 2, characterized in that, The analog-to-digital conversion unit includes a comparator and a filter. The first input terminal of the comparator is connected to the configurable impedance network, the second input terminal of the comparator is connected to the reference voltage generation unit, and the output terminal of the comparator is connected to the filter. The filter is connected between the output of the comparator and the input of the microcontroller unit.
5. A non-magnetic metering and detection circuit according to claim 2, characterized in that, The analog-to-digital conversion unit includes a unity-gain buffer and an analog-to-digital converter. The input of the unity-gain buffer is connected to the detection interface, and the output of the unity-gain buffer is connected to the analog-to-digital converter. The analog-to-digital converter is connected between the output of the unity-gain buffer and the input of the microcontroller unit.
6. The non-magnetic metering and detection circuit according to claim 2, characterized in that, The analog-to-digital conversion unit includes a variable gain amplifier and an analog-to-digital converter. The input of the variable gain amplifier is connected to the detection interface, and the output of the variable gain amplifier is connected to the analog-to-digital converter. The analog-to-digital converter is connected between the output of the variable gain amplifier and the input of the microcontroller unit.
7. The non-magnetic metering and detection circuit according to claim 1, characterized in that, The target detection mode includes at least one of diode self-excited detection mode, transistor external excitation detection mode, and LC oscillation pulse counting detection mode.
8. The non-magnetic metering and detection circuit according to claim 1, characterized in that, It also includes a triggering unit, which connects the microcontroller and the external detection unit, and is used to trigger the external detection unit to perform detection.
9. A non-magnetic metrological detection system, characterized in that, include: The non-magnetic metering detection circuit and external detection unit as described in any one of claims 1 to 8; The external detection unit includes multiple resonant circuits, and each resonant circuit is connected to a detection interface of the non-magnetic metering detection circuit. The microcontroller unit is configured to: control the non-magnetic metering detection circuit to apply excitation to each resonant circuit of the external detection unit according to the target detection mode, so that each resonant circuit detects the position change information of the metal target on the rotor under test by electromagnetic induction, and control each resonant circuit to convert the position change information into a single-channel analog detection signal and output it to the corresponding detection channel, and control each detection channel to convert the single-channel analog detection signal into a single-channel digital detection signal, and obtain the non-magnetic metering result based on each single-channel digital detection signal.
10. A non-magnetic metrological detection system according to claim 9, characterized in that, The target detection mode is an LC oscillation pulse counting detection mode. The external detection unit also includes multiple resistors connected between each resonant circuit and the corresponding detection channel, wherein each resistor corresponds one-to-one with each resonant circuit.
11. A non-magnetic metrological detection system according to claim 9, characterized in that, The target detection mode is a diode self-excited detection mode. The external detection unit also includes multiple diodes, each of which corresponds to a resonant circuit. The anode of the diode is connected to a detection interface, and the cathode of the diode is connected to the resonant circuit.
12. A non-magnetic metrological detection system according to claim 9, characterized in that, The target detection mode is a transistor external excitation detection mode. The external detection unit also includes multiple transistors, each of which corresponds to a resonant circuit. The base of the transistor is connected to a resonant circuit, the collector of the transistor is connected to a detection channel, the emitter of the transistor is grounded through a resistor network, and the emitter of the transistor is connected to the universal input / output interface of the non-magnetic metering detection circuit through a resistor-capacitor network.