Composite sensor, preparation method, multi-sensor system and detection method

Abstract

The embodiment of the invention provides a composite sensor, a preparation method, a multi-sensor system and a detection method.The composite sensor comprises a plurality of sensing units and a glass substrate, and the positions of the sensing units on the glass substrate are different. Each sensing unit comprises a first SiO2 film layer, a heating layer, a second SiO2 film layer, a metal electrode layer, a third SiO2 film layer and an induction layer, the induction layer comprises an induction material, and the induction material is used for detecting gas. According to the embodiment of the invention, the heating layer and the metal electrode layer adopt a multi-layer composite film structure design, the stability of the heating layer and the metal electrode layer is improved, the stability of the composite sensor is further improved, film plating is carried out through a physical vapor deposition (PVD) process, a film structure with high adhesive force and relatively good compactness is prepared, and the composite sensor has a good application prospect. And a plurality of metal oxide semiconductor sensing layers are integrated on the same sensor substrate, so that multi-component gas detection is realized.

Description

Technical Field

[0001] This application belongs to the field of gas detection technology, specifically relating to a composite sensor, its preparation method, a multi-sensor system, and a detection method. Background Technology

[0002] Metal-oxide-semiconductor (MOS) gas sensors offer advantages such as fast response, relatively low power consumption, low cost, long lifespan, ease of miniaturization, and portability, leading to their widespread application in environmental monitoring, disease detection, and food safety. However, while MOS sensors are widely used gas-sensitive materials, each typically has a single-layer gas-sensitive film. This single-layer film structure limits their ability to detect only a single gas component, resulting in poor selectivity and the limitation to detecting only one gas – a major technological bottleneck hindering further development. Therefore, a highly reliable gas sensor with miniaturization and low power consumption has emerged for mobile and portable applications.

[0003] The basic working principle of a semiconductor gas sensor is as follows: When a metal oxide semiconductor is heated to a certain temperature in air, oxygen atoms are adsorbed onto the negatively charged semiconductor surface. Electrons on the semiconductor surface are transferred to the adsorbed oxygen, turning the oxygen atoms into oxygen anions. Simultaneously, a positive space charge layer forms on the semiconductor surface, increasing the surface potential barrier and hindering electron flow. Inside the sensitive material, free electrons must cross the grain boundaries (the junctions between the microcrystals of the metal oxide semiconductor) to form a current. The potential barrier generated by oxygen adsorption also exists at the grain boundaries, hindering the free flow of electrons; the sensor's resistance arises from this barrier. Under operating conditions, when the sensor encounters a reducing gas, the oxygen anions undergo a redox reaction with the reducing gas, causing their surface concentration to decrease, and the potential barrier to decrease accordingly. This leads to a decrease in the sensor's resistance. In short, under certain conditions (temperature), as the gas being measured reacts with the oxygen adsorbed on the semiconductor surface, charge transfer occurs, further causing a change in the semiconductor resistance. By measuring this change in semiconductor resistance, gas detection can be achieved. Summary of the Invention

[0004] This application provides a composite sensor, a preparation method, a multi-sensor system, and a detection method. The heating layer and metal electrode layer of this application adopt a multi-layer composite film structure design, which improves the stability of the heating layer and metal electrode layer, and further helps to improve the stability of the composite sensor. The film layer is deposited by physical vapor deposition (PVD) process to achieve the preparation of a film layer structure with high adhesion and good density. In addition, multiple metal oxide semiconductor sensing layers are integrated on the same sensor substrate to realize the detection of multi-component gases.

[0005] In a first aspect, embodiments of this application provide a composite sensor, which includes multiple sensing units and a glass substrate. The multiple sensing units are positioned differently on the glass substrate, and each sensing unit includes: A first SiO2 film layer is disposed on the glass substrate; A heating layer is disposed on the first SiO2 film layer; A second SiO2 film layer is disposed on the heating layer; A metal electrode layer is disposed on the second SiO2 film layer; A third SiO2 film layer is disposed on the metal electrode layer; A sensing layer is disposed on the third SiO2 film layer. The sensing layer includes a sensing material for detecting gas. The sensing layer is doped with at least one of the following noble metals: Au, Ag, Pt, and Pd.

[0006] In one possible example, the heating layer includes a first MO film layer, a first heating layer, and a second MO film layer; The first MO film layer is disposed on the first SiO2 film layer, the first heating layer is disposed on the first MO film layer, and the second MO film layer is disposed on the first heating layer.

[0007] In one possible example, the first heating layer is a nickel-chromium alloy layer, a platinum alloy layer, a tungsten alloy layer, or a polycrystalline silicon film layer.

[0008] In one possible example, the metal electrode layer includes a third MO film layer, a first electrode layer, and a fourth MO film layer; The third MO film layer is disposed on the second SiO2 film layer, the first electrode layer is disposed on the third MO film layer, and the fourth MO film layer is disposed on the first heating layer.

[0009] In one possible example, the first electrode layer is a copper-nickel alloy layer, a molybdenum-copper-nickel alloy layer, or a molybdenum-aluminum-molybdenum alloy layer.

[0010] Secondly, embodiments of this application provide a method for fabricating a composite sensor, the composite sensor comprising multiple sensing units located at different positions; the method includes: The first SiO2 film layer was deposited on a glass substrate by PVD. A heating layer is deposited on the first SiO2 film using PVD. A second SiO2 film layer was deposited on the heating layer by PVD. A metal electrode layer is deposited on the second SiO2 film by PVD. A third SiO2 film layer was deposited on the metal electrode layer by PVD. Multiple pores are formed on the third SiO2 film layer; A sensing layer is deposited on the third SiO2 film layer by PVD to form a single sensing unit. Repeat the above steps to fabricate multiple sensing units on the glass substrate to form the composite sensor; An inhibition layer is formed on the surface of the sensing layer, and the inhibition layer is columnar, bundled, or mesh-like.

[0011] In one possible example, the deposition of the heating layer on the first SiO2 film by PVD includes: The first MO film layer is deposited on the first SiO2 film layer by PVD. The first heating layer is deposited on the first MO film layer by PVD. A second MO film layer is deposited on the first heating layer using PVD.

[0012] In one possible example, the deposition of the metal electrode layer on the second SiO2 film by PVD includes: A third MO film layer was deposited on the second SiO2 film layer by PVD. The first electrode layer is deposited on the third MO film by PVD. A fourth MO film layer is deposited on the first heating layer using PVD.

[0013] The third aspect of this application provides a multi-sensor system, which includes a plurality of composite sensors as described in the first aspect. The multi-sensor system is obtained by splicing the plurality of composite sensors according to a preset splicing process.

[0014] A fourth aspect of this application provides a sensing method applied to a controller in a composite sensor system, the composite sensor system including the controller and the composite sensor described in the first aspect, the controller being connected to multiple sensing units in the composite sensor; the method includes: The system acquires a first current detection value from a first sensing unit, a second current detection value from a second sensing unit, and an ambient temperature value. The sensing materials of the first sensing unit and the second sensing unit are the same. Determine the preset environmental compensation algorithm corresponding to the first sensing unit; The first concentration value and the second concentration value before compensation are determined based on the first current detection value and the second current detection value, respectively. The third concentration value after compensation is determined based on the first current detection value, the ambient temperature value, and the preset environmental compensation algorithm. The fourth concentration value after compensation is determined based on the second current detection value, the ambient temperature value, and the preset environmental compensation algorithm. Determine a first difference between the first concentration value and the third concentration value; Determine a second difference between the second concentration value and the fourth concentration value; If it is determined that the first difference is less than or equal to a preset threshold, the second difference is less than or equal to the preset threshold, and the third concentration value is equal to the fourth concentration value, then the third concentration value is determined to be the target concentration value for detection.

[0015] The fifth aspect of this application provides an electronic device including: a processor and a memory; and one or more programs stored in the memory and configured to be executed by the processor, the programs including instructions for some or all of the steps as described in the second or fourth aspect.

[0016] A sixth aspect of this application provides a computer-readable storage medium for storing a computer program that causes a computer to perform some or all of the steps described in the second or fourth aspect of this application.

[0017] A seventh aspect of this application provides a computer program product, comprising a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps described in the second or fourth aspect of this application. The computer program product may be a software installation package.

[0018] As can be seen, in the embodiments of this application, the heating layer and the metal electrode layer adopt a multilayer composite film structure design, which improves the stability of the heating layer and the metal electrode layer, and further helps to improve the stability of the composite sensor. The film layer is deposited by physical vapor deposition (PVD) process to achieve the preparation of a film layer structure with high adhesion and good density, and to integrate multiple metal oxide semiconductor sensing layers on the same sensor substrate to achieve multi-component gas detection. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a cross-sectional view of the structure of a composite sensor provided in an embodiment of this application; Figure 2 This is a sensor unit layout diagram of a composite sensor provided in an embodiment of this application; Figure 3 This is a schematic diagram of a sensor assembly provided in an embodiment of this application; Figure 4 This is a front view of a sensor product provided in an embodiment of this application; Figure 5 This is a schematic flowchart of a composite sensor fabrication method provided in an embodiment of this application; Figure 6 This is a process flow diagram of a composite sensor fabrication provided in an embodiment of this application; Figure 7 This is a schematic flowchart of a sensing detection method provided in an embodiment of this application. Detailed Implementation

[0021] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0022] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] In the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone; A and B exist simultaneously; B exists alone. Among them, A and B can be singular or plural.

[0025] In this embodiment, the symbol " / " can indicate that the preceding and following objects are in an "or" relationship. Alternatively, the symbol " / " can also represent a division sign, i.e., performing a division operation. For example, A / B can mean A divided by B.

[0026] In the embodiments of this application, "at least one item" or its similar expression refers to any combination of these items, including any combination of a single item or a plurality of items. "One or more" means one or more, while "multiple" means two or more. For example, "at least one item" of a, b, or c can represent the following seven cases: a, b, c; a and b; a and c; b and c; a, b, and c. Each of a, b, and c can be an element or a set containing one or more elements.

[0027] In the embodiments of this application, "equal to" can be used with "greater than" and is applicable to technical solutions used when "greater than" is used; it can also be used with "less than" and is applicable to technical solutions used when "less than" is used. When "equal to" is used with "greater than", it is not used with "less than"; when "equal to" is used with "less than", it is not used with "greater than".

[0028] To better understand the solutions of the embodiments of this application, the electronic devices, related concepts and background that may be involved in the embodiments of this application will be introduced below.

[0029] The electronic device in this application embodiment is a device with wireless communication capabilities, and may be referred to as a terminal, user equipment (UE), mobile station (MS), mobile terminal (MT), access electronic device, vehicle-mounted electronic device, industrial control electronic device, UE unit, UE station, mobile station, remote station, remote electronic device, mobile device, UE electronic device, wireless communication device, UE agent, or UE device, etc. The electronic device can be fixed or mobile. It should be noted that the electronic device can support at least one wireless communication technology, such as LTE, New Radio (NR), Wideband Code Division Multiple Access (WCDMA), etc. For example, electronic devices can be mobile phones, tablets, desktop computers, laptops, all-in-one computers, in-vehicle terminals, virtual reality (VR) electronic devices, augmented reality (AR) electronic devices, wireless terminals in industrial control, wireless terminals in self-driving vehicles, wireless terminals in remote medical surgery, wireless terminals in smart grids, wireless terminals in transportation safety, wireless terminals in smart cities, wireless terminals in smart homes, cellular phones, cordless phones, session initiation protocol (SIP) phones, wireless local loop (WLL) stations, personal digital assistants (PDAs), handheld devices with wireless communication capabilities, terminal devices or other processing devices connected to a wireless modem, wearable devices, electronic devices in future mobile communication networks, or electronic devices in future evolved public land mobile networks (PLMNs), etc. Electronic devices can also be battery assembly manufacturing equipment.

[0030] Please see Figure 1 , Figure 1This is a cross-sectional view of a composite sensor provided in an embodiment of this application. The composite sensor includes multiple sensing units, a glass substrate, and a suppression layer. The multiple sensing units are located at different positions on the glass substrate. Each sensing unit includes: a first SiO2 film layer, a heating layer, a second SiO2 film layer, a metal electrode layer, a third SiO2 film layer, and a sensing layer. Each sensing unit includes one sensing layer. The composite sensor includes sensing layer 1, sensing layer 2... sensing layer M+3 and sensing layer M+4. The first SiO2 film layer is disposed on the glass substrate, the heating layer is disposed on the first SiO2 film layer, the second SiO2 film layer is disposed on the heating layer, the metal electrode layer is disposed on the second SiO2 film layer, the third SiO2 film layer is disposed on the metal electrode layer, and the sensing layer is disposed on the third SiO2 film layer. The sensing layer includes a sensing material used for gas detection.

[0031] The sensing material includes at least one of the following: SnO2, ZnO, Fe2O3, In2O3, WO3, Cr2O3, Co3O4, TiO2, NiO, MoO3, CuO, and perovskite ABX3.

[0032] The glass substrate can be soda-lime glass, aluminosilicate glass, borosilicate glass, etc. The glass substrate can also be replaced with other substrate materials, including quartz, metal, PMMA / PET / PC, etc., without limitation.

[0033] In this process, a first SiO2 film layer is deposited on the surface of a glass substrate using PVD. Because the SiO2 film layer can bond well with the Si=O bonds on the glass surface, it can greatly improve the adhesion of the film layer and prevent the subsequent film layers from falling off. At the same time, the deposited SiO2 film layer exhibits a porous structure at the microscopic level, which can also bond well with the subsequent film layers. This can improve the bonding force between the subsequent film layers and the substrate and prevent the film layers from falling off due to changes in ambient temperature and humidity. In addition, because the SiO2 film layer is relatively dense, it can effectively prevent cations in the glass substrate from diffusing into the subsequent heating layer, which would cause the heating layer material to degenerate and change its performance.

[0034] In one possible example, the heating layer includes a first MO film layer, a first heating layer, and a second MO film layer; the first MO film layer is disposed on the first SiO2 film layer, the first heating layer is disposed on the first MO film layer, and the second MO film layer is disposed on the first heating layer.

[0035] In this process, a heating layer is deposited using PVD. A first MO film is deposited on top of a first SiO2 film. High-energy MO atoms bombard the rough SiO2 film surface, allowing Mo atoms to penetrate deep into the SiO2 film surface and effectively bond, which is beneficial for the growth of subsequent films. A first heating layer, made of nickel-chromium alloy, platinum alloy, tungsten alloy, or polycrystalline silicon, is then deposited on the MO film. This layer exhibits good heating properties and is not easily oxidized, maintaining high stability during subsequent heating. After depositing the first heating layer, another MO film is deposited, thus forming a "sandwich" heating layer structure. In this process, a second SiO2 film is deposited on the first heating layer. This second SiO2 film effectively protects the "sandwich" heating layer structure from oxidation, improving the product's lifespan. Simultaneously, SiO2, as a dense and stable inorganic material, possesses excellent insulating properties. The first heating layer generates heat to raise the structure's temperature. Temperature modulation enables the MOS sensor to achieve high gas selectivity. Temperature changes affect the adsorption of oxygen on the surface of the gas-sensitive material. When the temperature exceeds 150℃, oxygen primarily undergoes chemical adsorption, as O2. - Or O 2- Oxygen exists in the form of physical adsorption. When the temperature is below 150℃, most oxygen molecules are in a physical adsorption state, while the main form of chemically adsorbed oxygen species is O₂. 2- Furthermore, as the temperature rises, the energy from heating causes oxygen molecules to adsorb onto the interface, forming oxygen species. This oxygen adsorption process leads to a decrease in resistance as electrons are adsorbed within the material. Therefore, the resistance of the sensing material tends to decrease as the temperature rises; conversely, as the temperature decreases, it cannot provide sufficient energy to adsorb oxygen, resulting in an increase in the resistance of the sensing material.

[0036] In one possible example, the metal electrode layer includes a third MO film layer, a first electrode film layer, and a fourth MO film layer; the third MO film layer is disposed on the second SiO2 film layer, the first electrode film layer is disposed on the third MO film layer, and the fourth MO film layer is disposed on the first heating layer.

[0037] The first electrode layer is a copper-nickel alloy layer, a molybdenum-copper-nickel alloy layer, or a molybdenum-aluminum-molybdenum alloy layer.

[0038] In this process, after the second SiO2 film is deposited on the first heating layer, the first electrode layer is deposited on the second SiO2. The material of the metal electrode layer can also be a sandwich structure. The deposited electrode layer structure has excellent conductivity, good corrosion resistance, and good ohmic contact with the subsequent metal oxide semiconductor sensitive material layer, i.e., the sensing layer. The main function of the metal electrode layer is electron transfer, which is used to detect the change in the weak electrical signal of the metal oxide semiconductor sensitive material layer caused by the presence of the detected gas.

[0039] The metal electrode layer overlaps with the first heating layer. Since the top material of the heating layer is essentially the same as the bottom material of the metal electrode layer, they can form a good ohmic contact with very low contact resistance. When a certain current passes through, there will be no significant heat generation at the contact surface between the electrode layer and the heating layer. The main heat generation will be concentrated within the heating layer area, which can extend the product's lifespan. The top SiO2 film layer completely covers the exposed metal electrode layer and the first heating layer, effectively isolating the sensor's performance from external environmental factors such as water and oxygen, and preventing the metal electrode layer from oxidizing during long-term use. The final deposited sensing layer material is mainly used to sense the detected gaseous or liquid materials. When the detected object is present, the potential barrier inside the sensing layer material changes, resulting in a weak electrical signal change. This change in electrical signal can be used to determine the composition and concentration of the detected material. Each sensing layer can detect and identify a unique detected object, but each sensor integrates N sensing layer materials, allowing a single sensor to detect N different materials.

[0040] The sensing layer is doped with at least one of the following noble metals: Au, Ag, Pt, and Pd. Different sensing layers are doped with different noble metals.

[0041] After depositing the metal electrode layer, a low-temperature third SiO2 film layer is deposited on top. The main function of this film is to protect the electrode layer and prevent oxidation. Then, the sensing layer material is deposited on the third SiO2 film. To ensure sufficient contact between the two layers, an open-pore technique is used in the design, which provides both conductivity and effective protection for the metal electrode circuitry. The deposited sensing layer material uses noble metals such as Au, Ag, Pt, Al, Ga, Zr, and Pd as dopants to optimize gas sensing response performance. Noble metal doping has several positive effects on improving sensing response. First, it effectively reduces the adsorption activation energy, significantly increasing the adsorption of oxygen anions and target gases. Second, the introduction of noble metals causes exciton redistribution, leading to band bending and altering the original motion path and state of charge carriers, thus affecting the overall electrical performance of the sensing material. Furthermore, noble metal doping lowers the activation energy of the entire process, which helps improve sensing efficiency. The addition of noble metal dopants enhances the gas adsorption capacity of the sensing material, thereby optimizing the gas sensing response performance. Different metal oxides doped with different noble metals exhibit different physical properties. For example, introducing Pd doping into WO3 films results in Pd-WO3 films with excellent SO2 detection performance. Ag-modified Tb doped into In2O3 materials forms Ag-Tb-In2O3 films that can detect H2 at 500 ppb at their optimal operating temperature of 160℃. Palladium-doped Pd-SnO2 gas-sensitive materials are relatively sensitive to CH4. Therefore, this technical solution deposits a metal oxide sensing layer with a certain metal doping on the plated metal electrode layer through PVD, CVD or other methods. This sensing layer has a certain detection capability for specific gas materials. Then, through exposure, development and etching processes, a specific sensing layer can be formed at the corresponding position. The sensing layer overlaps with the electrode layer. When the sensing layer comes into contact with the gas to be detected, the electron movement in the sensing layer generates a current. The current is transmitted to the controller through the electrode layer. Then, the gas concentration is determined by judging the signal strength, waveform and frequency.

[0042] In one possible example, columnar, bundled, or mesh-like suppression layers can be avoided in the sensing layer.

[0043] In high-humidity environments, the H2O in the environment reacts with the chemically adsorbed oxygen on the surface of metal oxides, causing hydroxyl poisoning in the sensor. This leads to reduced sensor response values, decreased detection accuracy, and shortened product lifespan, significantly impacting sensor calibration and detection accuracy. This application addresses this issue by forming a suppression layer. This suppression layer creates columnar, bundle-like, or mesh-like protrusions on the top layer of the array sensor. While ensuring effective contact between the sensing layer and air, water's surface tension prevents it from reaching the sensing layer material. This effectively prevents moisture and oil from affecting the sensing layer's performance, improving the sensor's stability in high-humidity environments.

[0044] Please see Figure 2 , Figure 2 The diagram shows the layout of a single sensor, employing a 6×6 array. a1-a6, b1-b6, and c1-c6 represent 18 different sensing layer materials. Each sensing layer material can detect a corresponding gas component, and they are independent of each other. To avoid false alarms caused by the influence of the external environment on the sensing layer materials, another sensing layer material of the same type is added diagonally opposite the sensor, such as a1-a1 and b1-b1. When determining the detection signal, the concentration and composition of the gas can be determined based on the changes in the electrical signals of the two sensing layers. This effectively avoids signal attenuation and blockage caused by a single sensing layer material, reducing false alarms and improving the sensor's detection accuracy. Similarly, various structures such as 2×2, 3×3...8×8 can be designed according to the needs of the actual application scenario, or multiple arrays of the same sensing layer material can be designed with 3, 4, or more layers on the same sensor. The specific structure and array positions depend on the application scenario and requirements. Each sensing layer material is connected to the pin via leads made during the electrode layer process. When the sensing layer material comes into contact with the gas being detected, a weak electrical signal change is transmitted to the pin via the leads. The pin is then connected to the controller via bonding and bonding processes. After detecting the signal change, the controller calculates, compares, and analyzes the concentration of the gas being detected to determine the corresponding response command.

[0045] like Figure 4 As shown, Figure 4The diagram shows a front view of a sensor product. Multiple independent sensors are integrated onto a standard substrate. The sensor product has a length of X and a width of Y. Each sensor has the same function and a length of L and a width of W. To facilitate separation of the integrated product, a pre-defined blank channel of width I is provided between each sensor. This channel subsequently serves as a cutting line for separating the products. Along this cutting line, the integrated product can be divided into several independent small sensor arrays. To ensure the performance stability of each small sensor, a width of w is reserved between each independent sensor and the edge of the glass substrate in the horizontal direction, and a width of d is reserved between each independent sensor and the edge of the glass substrate in the vertical direction. The dimensions of X, Y, L, W, I, w, and d can be preset manually or are system defaults; no limitations are specified here.

[0046] Please see Figures 5-6 , Figure 5 This is a schematic flowchart of a composite sensor fabrication method provided in an embodiment of this application. Figure 6 This is a process flow diagram of a composite sensor fabrication according to an embodiment of this application. The composite sensor includes multiple sensing units located in different positions. The method includes: Step S501: A first SiO2 film layer is deposited on a glass substrate by PVD.

[0047] Step S502: A heating layer is deposited on the first SiO2 film by PVD.

[0048] Among them, after the heating layer is deposited, the heating layer is patterned.

[0049] Step S503: A second SiO2 film layer is deposited on the heating layer by PVD.

[0050] In this process, after depositing the second SiO2 film, the second SiO2 film is patterned.

[0051] Step S504: A metal electrode layer is deposited on the second SiO2 film layer by PVD.

[0052] In this process, after depositing the metal electrode layer, the metal electrode layer is patterned.

[0053] Step S505: A third SiO2 film layer is deposited on the metal electrode layer by PVD.

[0054] In this process, after depositing the third SiO2 film, the third SiO2 film is patterned.

[0055] Step S506: A plurality of pores are formed on the third SiO2 film layer.

[0056] Multiple holes are provided to facilitate the connection between the sensing layer and the metal electrode layer.

[0057] Step S507: A sensing layer is deposited on the third SiO2 film layer by PVD to form a single sensing unit.

[0058] In this process, the sensing layer is patterned after it is deposited.

[0059] Step S508: Repeat steps S502-S507 to fabricate multiple sensing units on the glass substrate to form the composite sensor. Among them, repeating steps S502-S507 is the process of repeating the sensing layer.

[0060] Step S509: An inhibition layer is formed on the surface of the sensing layer. The inhibition layer is columnar, bundled, or mesh-like.

[0061] In this process, after the composite sensor is fabricated, the surface of the sensing layer of the composite sensor is treated to form a columnar, bundled, or mesh-like suppression layer.

[0062] In one possible example, the deposition of the heating layer on the first SiO2 film by PVD includes: depositing a first MO film on the first SiO2 film by PVD; depositing a first heating layer on the first MO film by PVD; and depositing a second MO film on the first heating layer by PVD.

[0063] In one possible example, the deposition of the metal electrode layer on the second SiO2 film by PVD includes: depositing a third MO film on the second SiO2 film by PVD; depositing a first electrode layer on the third MO film by PVD; and depositing a fourth MO film on the first heating layer by PVD.

[0064] This application provides a sensor system, a multi-sensor system including multiple composite sensors, which are assembled from multiple composite sensors according to a preset splicing process. Please refer to [link to relevant documentation]. Figure 3 , Figure 3The diagram shows a four-sensor assembly, including the seams. It's difficult to deposit more than 50 different sensing layer materials on the same standard substrate, or the process conditions required for depositing these materials can vary significantly. Depositing too many sensing layers involves repeated exposure to high temperatures and vacuum environments, which may affect the performance of the films deposited in previous processes. Furthermore, significant differences in the deposition or patterning processes of the sensing layers can also negatively impact other layers. Therefore, sensing layer materials with similar processes are designed onto the same sensor, and then integrated using a splicing process. This ensures both product performance and stability. Each sensor module has independent pins connected to the controller, guaranteeing the integrity of the detection model.

[0065] Please see Figure 7 , Figure 7 This is a flowchart illustrating a sensing and detection method provided in an embodiment of this application, applied to a controller in a composite sensor system. The composite sensor system includes the controller and a composite sensor, with the controller connected to multiple sensing units in the composite sensor. The method includes: Step S701: Obtain the first current detection value from the first sensing unit, the second current detection value from the second sensing unit, and the ambient temperature value; The sensing material of the first sensing unit is the same as that of the second sensing unit, but the positions of the first sensing unit and the second sensing unit on the glass substrate are different. Figure 2 For example, the first sensing unit and the second sensing unit can be a1 at different positions.

[0066] Step S702: Determine the preset environment compensation algorithm corresponding to the first sensing unit; Among them, environmental conditions such as temperature can affect the detected current value, which in turn affects the determined concentration value. Therefore, multiple preset environmental compensation algorithms can be stored in the preset information database. Different preset environmental compensation algorithms can be selected according to different sensing layer materials to compensate for the impact of the current environment on detection.

[0067] Step S703: Determine the first concentration value and the second concentration value before compensation based on the first current detection value and the second current detection value, respectively.

[0068] The system can store a set of correspondences between current detection values ​​and concentration values ​​in advance. The first concentration value can be obtained by querying the set of correspondences using the first current detection value, and the second concentration value can be obtained by querying the set of correspondences using the second current detection value.

[0069] Step S704: Determine the compensated third concentration value based on the first current detection value, the ambient temperature value, and the preset environmental compensation algorithm.

[0070] The system can determine the first current compensation value based on the ambient temperature value and the preset environmental compensation algorithm, and then determine the third current detection value. The third current detection value = the first current detection value + the first current compensation value. Then, the third current detection value is used to query the corresponding relationship set to obtain the third concentration value.

[0071] Step S705: Determine the compensated fourth concentration value based on the second current detection value, the ambient temperature value, and the preset environmental compensation algorithm; The system can determine the first current compensation value based on the ambient temperature value and the preset environmental compensation algorithm, and then determine the fourth current detection value. The fourth current detection value = the second current detection value + the first current compensation value. Then, the fourth current detection value is used to query the corresponding relationship set to obtain the fourth concentration value.

[0072] Step S706: Determine the first difference between the first concentration value and the third concentration value; Wherein, the first difference = the first concentration value - the third concentration value.

[0073] Step S707: Determine the second difference between the second concentration value and the fourth concentration value; Wherein, the second difference = the second concentration value - the fourth concentration value.

[0074] Step S708: If it is determined that the first difference is less than or equal to a preset threshold, the second difference is less than or equal to the preset threshold, and the third concentration value is equal to the fourth concentration value, then the third concentration value is determined to be the target concentration value to be detected.

[0075] The preset threshold can be set manually or by system default, and no restriction is made here.

[0076] It is evident that by comparing, compensating, and verifying signals from multiple sensing layers, the controller can select the appropriate environmental compensation algorithm, which helps improve the accuracy of detection.

[0077] It should be noted that all relevant content of each step involved in the above method embodiments can be referenced from the functional description of the corresponding functional module, and will not be repeated here.

[0078] When using integrated units, the electronic device may include a processing module, a storage module, and a communication module. The processing module can be used to control and manage the actions of the electronic device; for example, it can support the electronic device in executing the steps performed by the aforementioned functional units. The storage module can support the electronic device in executing stored program code and data. The communication module can support communication between the electronic device and other devices.

[0079] The processing module can be a processor or a controller. It can implement or execute various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. The processor can also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of digital signal processing (DSP) and a microprocessor, etc. The storage module can be a memory. The communication module can specifically be a radio frequency circuit, a Bluetooth chip, a Wi-Fi chip, or other devices that interact with other electronic devices.

[0080] This application also provides a computer storage medium storing a computer program for electronic data interchange, which causes a computer to perform some or all of the steps of any of the methods described in the above method embodiments, wherein the computer includes a terminal device.

[0081] This application also provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps of any of the methods described in the above method embodiments. The computer program product may be a software installation package, and the computer includes a control platform.

[0082] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.

[0083] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0084] In the several embodiments provided in this application, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical or other forms.

[0085] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0086] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0087] If the aforementioned integrated units are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned memory includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.

[0088] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage device, which may include: a flash drive, a read-only memory, a random access memory, a magnetic disk, or an optical disk, etc.

[0089] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composite sensor, characterized in that, The composite sensor includes multiple sensing units and a glass substrate. The multiple sensing units are located at different positions on the glass substrate. Each sensing unit includes: A first SiO2 film layer is disposed on the glass substrate; A heating layer is disposed on the first SiO2 film layer; A second SiO2 film layer is disposed on the heating layer; A metal electrode layer is disposed on the second SiO2 film layer; A third SiO2 film layer is disposed on the metal electrode layer; A sensing layer is disposed on the third SiO2 film layer. The sensing layer includes a sensing material for detecting gas. The sensing layer is doped with at least one of the following noble metals: Au, Ag, Pt, and Pd.

2. The composite sensor according to claim 1, characterized in that, The heating layer includes a first MO film layer, a first heating layer, and a second MO film layer; The first MO film layer is disposed on the first SiO2 film layer, the first heating layer is disposed on the first MO film layer, and the second MO film layer is disposed on the first heating layer.

3. The composite sensor according to claim 2, characterized in that, The first heating layer is a nickel-chromium alloy layer, a platinum alloy layer, a tungsten alloy layer, or a polycrystalline silicon film layer.

4. The composite sensor according to claim 1, characterized in that, The metal electrode layer includes a third MO film layer, a first electrode layer, and a fourth MO film layer; The third MO film layer is disposed on the second SiO2 film layer, the first electrode layer is disposed on the third MO film layer, and the fourth MO film layer is disposed on the first heating layer.

5. The composite sensor according to claim 4, characterized in that, The first electrode layer is a copper-nickel alloy layer, a molybdenum-copper-nickel alloy layer, or a molybdenum-aluminum-molybdenum alloy layer.

6. A method for fabricating a composite sensor, characterized in that, The composite sensor includes multiple sensing units, which are located at different positions; the method includes: The first SiO2 film layer was deposited on a glass substrate by PVD. A heating layer is deposited on the first SiO2 film using PVD. A second SiO2 film layer was deposited on the heating layer by PVD. A metal electrode layer is deposited on the second SiO2 film by PVD. A third SiO2 film layer was deposited on the metal electrode layer by PVD. Multiple pores are formed on the third SiO2 film layer; A sensing layer is deposited on the third SiO2 film layer by PVD to form a single sensing unit. Repeat the above steps to fabricate multiple sensing units on the glass substrate to form the composite sensor; An inhibition layer is formed on the surface of the sensing layer, and the inhibition layer is columnar, bundled, or mesh-like.

7. The method according to claim 6, characterized in that, The process of depositing a heating layer on the first SiO2 film using PVD includes: The first MO film layer is deposited on the first SiO2 film layer by PVD. The first heating layer is deposited on the first MO film layer by PVD. A second MO film layer is deposited on the first heating layer using PVD.

8. The method according to claim 6, characterized in that, The deposition of a metal electrode layer on the second SiO2 film by PVD includes: A third MO film layer was deposited on the second SiO2 film layer by PVD. The first electrode layer is deposited on the third MO film by PVD. A fourth MO film layer is deposited on the first heating layer using PVD.

9. A multi-sensor system, characterized in that, The multi-sensor system includes a plurality of composite sensors as described in any one of claims 1-5, and the multi-sensor system is obtained by splicing the plurality of composite sensors according to a preset splicing process.

10. A sensing detection method, characterized in that, A controller for use in a composite sensor system, the composite sensor system including the controller and a composite sensor as described in any one of claims 1-5, the controller being respectively connected to a plurality of sensing units in the composite sensor; the method comprising: The system acquires a first current detection value from a first sensing unit, a second current detection value from a second sensing unit, and an ambient temperature value. The sensing materials of the first sensing unit and the second sensing unit are the same. Determine the preset environmental compensation algorithm corresponding to the first sensing unit; The first concentration value and the second concentration value before compensation are determined based on the first current detection value and the second current detection value, respectively. The third concentration value after compensation is determined based on the first current detection value, the ambient temperature value, and the preset environmental compensation algorithm. The fourth concentration value after compensation is determined based on the second current detection value, the ambient temperature value, and the preset environmental compensation algorithm. Determine a first difference between the first concentration value and the third concentration value; Determine a second difference between the second concentration value and the fourth concentration value; If it is determined that the first difference is less than or equal to a preset threshold, the second difference is less than or equal to the preset threshold, and the third concentration value is equal to the fourth concentration value, then the third concentration value is determined to be the target concentration value for detection.

Images