Light-emitting device and method for manufacturing light-emitting device

Abstract

The invention relates to a light-emitting device and a method for manufacturing the light-emitting device. Provided is a light-emitting device provided with a light reflecting member having high heat dissipation properties. A light-emitting device according to the present invention includes: a light-emitting element including a semiconductor structure having a light-emitting surface, an electrode-forming surface positioned on the opposite side of the light-emitting surface, and a side surface positioned between the light-emitting surface and the electrode-forming surface, and an electrode provided on the electrode-forming surface; and a light reflecting member having a lower surface and covering side surfaces of the semiconductor structure and side surfaces of the electrode, the electrode having an exposed surface not covered by the light reflecting member, the light reflecting member including: a first light reflecting portion covering the side surfaces of the semiconductor structure, and a second light reflecting portion covering the side surfaces of the semiconductor structure; an inorganic material serving as a main material, and a light reflecting material having a refractive index higher than that of the inorganic material; and a second light reflecting part which has a lower surface, covers at least a part of the side surface of the electrode, contains an inorganic material, and contains the light reflecting material in a smaller content than the first light reflecting part or substantially does not contain the light reflecting material.

Description

Technical Field

[0001] This invention relates to a light-emitting device and a method for manufacturing the light-emitting device. Background Technology

[0002] In recent years, light sources using light-emitting elements such as light-emitting diodes have become increasingly widely used. For example, Patent Document 1 discloses a light-emitting device in which at least the side of the light-emitting element is covered by a light-reflective covering member, and a phosphor layer is disposed on the upper surface of the light-emitting element.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2018-14480

[0004] However, there is still room for improvement in the reflective properties of the covering component to enhance the performance of the light-emitting device. For example, heat is generated when light from the light-emitting element is irradiated onto the covering component, thus requiring further improvements in heat dissipation. Summary of the Invention

[0005] Therefore, the object of the present invention is to provide a light-emitting device with a light-reflecting component having high heat dissipation and a method for manufacturing the light-emitting device.

[0006] The light-emitting device of the present invention includes: a light-emitting element comprising: a semiconductor structure having a light-emitting surface, an electrode forming surface located opposite to the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; an electrode disposed on the electrode forming surface; and a light-reflecting member having a lower surface and covering the side surface of the semiconductor structure and the side surface of the electrode, the electrode having an exposed surface not covered by the light-reflecting member, the light-reflecting member comprising: a first light-reflecting portion covering the side surface of the semiconductor structure and comprising an inorganic material as the main material and a light-reflecting material with a refractive index higher than the inorganic material; and a second light-reflecting portion having the lower surface covering at least a portion of the side surface of the electrode, comprising the inorganic material, and comprising the light-reflecting material in a less quantity than the first light-reflecting portion or substantially not comprising the light-reflecting material.

[0007] The method for manufacturing a light-emitting device according to the present invention includes the following steps: a step of preparing a light-emitting element, the light-emitting element comprising: a semiconductor structure having a light-emitting surface, an electrode forming surface located on the opposite side of the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; and an electrode disposed on the electrode forming surface; a step of preparing a light-reflecting inorganic component, the light-reflecting inorganic component comprising: a first light-reflecting portion made of an inorganic material containing a light-reflecting material and having plasticity; and a second light-reflecting portion made of an inorganic material containing a light-reflecting material in a smaller amount than the first light-reflecting portion or substantially not containing a light-reflecting material and having plasticity, and the second light-reflecting portion being disposed below the first light-reflecting portion; and a step of pressing the electrode forming surface of the light-emitting element by contacting the first light-reflecting portion side of the light-reflecting inorganic component with the first light-reflecting portion side, and causing the side surface and electrode forming surface of the semiconductor structure to sink so as to be covered by the first light-reflecting portion.

[0008] According to the present invention, a light-emitting device having a light-reflecting component with high heat dissipation and a method for manufacturing the light-emitting device can be provided. Attached Figure Description

[0009] Figure 1 This is a simplified cross-sectional view of the light-emitting device according to an embodiment of the present invention.

[0010] Figure 2 This is a simplified cross-sectional view of a light-emitting device according to a variation of the present invention.

[0011] Figure 3 This is a simplified cross-sectional view showing the boundary between the first light-reflecting part and the second light-reflecting part of the light-emitting device according to an embodiment of the present invention, enlarged.

[0012] Figure 4 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0013] Figure 5 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0014] Figure 6 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0015] Figure 7 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0016] Figure 8 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0017] Figure 9This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention.

[0018] Figure 10 This is a simplified cross-sectional view of one step in the manufacturing method of the light-emitting device of the present invention. Detailed Implementation

[0019] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the light-emitting device and the method of manufacturing the light-emitting device described below are techniques for embodying the technical concept of the present invention; unless otherwise specifically stated, the present invention is not limited to the following.

[0020] In the accompanying drawings, components with the same function are sometimes labeled with the same reference numeral. For ease of explanation or understanding, multiple embodiments are sometimes shown separately for convenience, but the structures shown in different embodiments can be partially interchanged or combined. In the embodiments described later, descriptions of things identical to those described above are omitted, and only the differences are explained. In particular, the same effects resulting from the same structure are not described in detail in each embodiment. The size, positional relationships, etc., of the components shown in the drawings are sometimes exaggerated for clarity. End views showing only cross-sections are often used as sectional views.

[0021] <Implementation Method of Light-Emitting Device>

[0022] Reference Figure 1 The light-emitting device 1 according to an embodiment of the present invention will be described in detail. The light-emitting device 1 according to an embodiment of the present invention includes at least a light-emitting element 10 and a light-reflecting component 20.

[0023] The light-emitting element 10 includes a semiconductor structure 11 and a first electrode 12. The semiconductor structure 11 has a light-emitting surface 11a, an electrode forming surface 11b located on the side opposite to the light-emitting surface 11a, and a side surface 11c located between the light-emitting surface 11a and the electrode forming surface 11b. The first electrode 12 is disposed on the electrode forming surface 11b and has a first surface 12a opposite to the electrode forming surface 11b, a second surface 12b located on the side opposite to the first surface 12a, and a side surface 12c located between the first surface 12a and the second surface 12b.

[0024] The light-reflecting component 20 covers the light-emitting element 10 except for the light-emitting surface 11a and the second surface 12b. Furthermore, the light-reflecting component 20 includes a first light-reflecting portion 21 that covers at least the side surface 11c of the semiconductor structure 11, and a second light-reflecting portion 22 that covers at least a portion of the second surface 12b side of the side surface 12c of the first electrode 12 and the lower surface of the first light-reflecting portion 21.

[0025] The following is for reference Figure 1as well as Figure 3 The structural components of the light-emitting device 1 according to an embodiment of the present invention are described in detail.

[0026] Here, in Figure 1 as well as Figure 3 The illustration includes a light-transmitting component 30 and a second electrode 13, but the invention may or may not include the light-transmitting component 30 and the second electrode 13. When the light-emitting device 1 includes the light-transmitting component 30, the upper surface 30a of the light-transmitting component 30 functions as the light-emitting surface of the light-emitting device 1.

[0027] [Light-emitting element]

[0028] The light-emitting element 10 can be a semiconductor light-emitting element such as a light-emitting diode, and can be a light-emitting element 10 that emits ultraviolet light or visible light such as blue, green, or red. The light-emitting element 10 includes a semiconductor structure 11 including a light-emitting layer and a first electrode 12. The semiconductor structure 11 includes a surface on one side where the first electrode 12 is formed (electrode forming surface) and a surface on the opposite side, i.e., a light extraction surface (light-emitting surface).

[0029] The semiconductor structure 11 includes a semiconductor layer containing a light-emitting layer. Furthermore, a light-transmitting substrate such as sapphire may be provided on the light-emitting surface 11a side of the semiconductor structure 11. As an example, the semiconductor structure 11 may include three semiconductor layers: a first conductivity type semiconductor layer (e.g., an n-type semiconductor layer), a light-emitting layer (active layer), and a second conductivity type semiconductor layer (e.g., a p-type semiconductor layer). The semiconductor layer capable of emitting ultraviolet light, blue light, green light, or visible light can be formed from semiconductor materials such as III-V compound semiconductors. Specifically, In... X Al Y Ga 1-X-Y Nitride-based semiconductor materials such as N (0≤X, 0≤Y, X+Y≤1) can be used. Additionally, GaAs, GaAlAs, GaP, InGaAs, and InGaAsP can be used as the semiconductor layer capable of emitting red light. The peak wavelength of the light emitted by the semiconductor structure 11 can, for example, be set to a range of 260nm to 630nm.

[0030] The first electrode 12, for example, includes a negative electrode and a positive electrode, and is disposed on the same side (electrode forming surface) of the semiconductor structure 11. The first electrode 12 has a first surface 12a opposite to the electrode forming surface 11b of the semiconductor structure 11, a second surface 12b located on the side opposite to the first surface 12a, and a side surface 12c located between the first surface 12a and the second surface 12b. Each of the negative and positive electrodes included in the first electrode 12 can be a single-layer structure or a multilayer structure. Such a first electrode 12 can be formed with materials and structures known in the art, and can be of any thickness. For example, the thickness of the first electrode 12 is preferably from tens of μm to 300 μm. In addition, a good conductor can be used as the first electrode 12, such as a metal such as Cu is preferred. The electrode shape can be selected in various shapes depending on the purpose, application, etc.

[0031] [Light reflecting component]

[0032] The light-reflecting component 20 covers the side surface 11c of the semiconductor structure 11 and the side surface 12c of the first electrode 12, and exposes the second surface 12b of the first electrode 12 from the lower surface of the light-reflecting component 20. Alternatively, if the light-emitting device 1 includes a light-transmitting component 30, the light-reflecting component 20 may also cover the side surface of the light-transmitting component 30. Furthermore, in this specification, the second surface 12b of the first electrode 12 is also referred to as the exposed surface.

[0033] In the light-emitting device 1 of this embodiment, the light-reflecting component 20 is made of an inorganic material, which improves heat resistance compared to a light-reflecting component whose main component is resin, thus enhancing reliability even when applied to light-emitting devices with high luminous intensity. Furthermore, inorganic materials exhibit less light-induced degradation compared to resins; in particular, when applied to light-emitting devices using a light-emitting element 10 that generates ultraviolet light with energy higher than visible light, light-induced degradation can be suppressed. The peak wavelength of the ultraviolet light-emitting element 10 is, for example, 410 nm or less.

[0034] Furthermore, inorganic materials have higher thermal conductivity than organic materials and good heat dissipation characteristics, so they can dissipate heat appropriately toward the outside of the first light reflecting part 21 (for example, toward the second light reflecting part 22 or the light-transmitting part 30), thereby improving heat dissipation.

[0035] In the light-emitting device 1 of this embodiment, the lower surface of the light-reflecting member 20 is the mounting surface side, and the second surface (exposed surface) 12b of the first electrode 12 exposed from the lower surface of the light-reflecting member 20 is connected to the electrode of the mounting substrate, for example, directly or via an auxiliary electrode, i.e., the second electrode 13. In the light-emitting device 1, the mounting surface, as described in the manufacturing method described later, can undergo various processing during manufacturing. Furthermore, even in the manufactured light-emitting device 1, force and heat can be applied, for example, during mounting.

[0036] Therefore, in the light-emitting device 1 of this embodiment, when the light-reflecting member 20 is located on the side of the light-emitting surface 11a and includes the side surface 11c of the semiconductor structure 11 and the light-transmitting member 30, it includes a first light-reflecting portion 21 covering the side surface of the light-transmitting member 30 and a second light-reflecting portion 22 located on the mounting surface side. The side surface of the light-reflecting member 20 includes a first side surface 21c of the first light-reflecting portion 21 and a second side surface 22c of the second light-reflecting portion 22 located below the first side surface 21c.

[0037] The first light-reflecting portion 21 is constructed by comprising an inorganic material as the main material and a light-reflecting material with a higher refractive index than the inorganic material. The second light-reflecting portion 22 comprises an inorganic material as the main material and is configured to contain a smaller amount of light-reflecting material than the first light-reflecting portion 21 or substantially no light-reflecting material. The second light-reflecting portion 22 may be, for example, an inorganic material as the main material, or it may contain the same inorganic material as the first light-reflecting portion 21. The second light-reflecting portion 22 is located on the mounting surface side and forms the lower surface of the light-reflecting member 20, covering at least a portion of the side surface 12c of the electrode 12.

[0038] The first light reflecting part 21 and the second light reflecting part 22 will be described in more detail below.

[0039] The first light-reflecting part 21 has a higher reflectivity than the second light-reflecting part 22, and reflects light emitted from the light-emitting element 10 more effectively. For example, the first light-reflecting part 21 can reflect light from the light-emitting element 10 with a reflectivity of 70% or more. The first light-reflecting part 21 is a component mainly composed of inorganic materials. The first light-reflecting part 21 includes an inorganic light-reflecting material (filler) and a support material made of an inorganic material supporting the light-reflecting material. In addition to improving reflectivity, the light-reflecting material can suppress shrinkage during manufacturing, such as that caused by heating, and can suppress the formation of cracks. Furthermore, after manufacturing, it functions as a reinforcing material to suppress deformation and crack formation caused by heat. This reinforcing material function can be more effectively achieved, for example, by using plate-shaped or needle-shaped particles. An example of a light-reflecting material is at least one selected from boron nitride, silicon nitride, aluminum nitride, and aluminum oxide, wherein boron nitride has high heat dissipation properties and can efficiently dissipate the heat generated by the light-emitting element. In this way, by including a light-reflecting material that can function as a frame, the first light-reflecting part 21 can not only improve the light reflectivity, but also improve the quality of the first light-reflecting part 21 during and after manufacturing.

[0040] The following is for reference Figure 3 Specifically, describe light-reflecting materials with plate-like or needle-like particles.

[0041] Figure 3 This is a schematic cross-sectional view of a portion of a light-reflecting component 20, which contains a support material 212 made of silicon dioxide (silicon oxide) and a light-reflecting material 211 made of boron nitride. The first light-reflecting portion 21 is above the dashed line, and the second light-reflecting portion 22 is below the dashed line. Figure 3 The image shows an example where the second light-reflecting part 22 does not actually contain light-reflecting material 211.

[0042] The plate-shaped or needle-shaped light-reflecting material 211 is not limited to boron nitride; for example, it can also be silicon nitride, aluminum nitride, or aluminum oxide. The light-reflecting material 211 can be primary particles or secondary particles formed by the aggregation of two or more primary particles. Furthermore, primary and secondary particles can be mixed together.

[0043] The plate-like or needle-like shape of the light-reflecting material 211 refers to the case where the average aspect ratio of the light-reflecting material 211 in the cross-section of the first light-reflecting portion 21 is 5 or more, preferably 10 or more, and more preferably 10 or more and 70 or less. By using such a plate-like or needle-like light-reflecting material 211, deformation of the first light-reflecting portion 21 can be suppressed more effectively. The plate-like light-reflecting material 211 includes the scale-like light-reflecting material described later.

[0044] <Method for Calculating the Average Aspect Ratio>

[0045] The average aspect ratio of the light-reflecting material 211 is calculated by measuring the thickness and lateral width of the light-reflecting material 211 contained in the cross-section of the first light-reflecting section 21.

[0046] First, the light-emitting device is cut along a direction approximately orthogonal to the light-emitting surface, forming a cross-section of the first light-reflecting part 21. Next, the exposed cross-section is mirror-polished. The mirror-polished cross-section is photographed using a scanning electron microscope (SEM). Then, a measurement area containing approximately 1000 light-reflecting materials 211 in the cross-section is selected. Here, the microscope's pixel count is set to approximately 20 million pixels, and the magnification is set to 500x to 3000x.

[0047] Furthermore, the plate-shaped or needle-shaped light-reflecting materials 211 tend to be arranged in an overlapping manner within the first light-reflecting portion 21 due to their shape.

[0048] Next, using image analysis software, the transverse width (length of the long side of the cross-section of the light-reflecting material) and thickness (length of the short side of the cross-section of the light-reflecting material) of each section of the extracted light-reflecting material 211 are measured point by point, and the ratio of transverse width to thickness is calculated. Then, the average value of the calculated values ​​of the measured light-reflecting material 211 is set as the average aspect ratio.

[0049] The preferred average particle diameter of the light-reflecting material 211 is 0.6 μm or more and 43 μm or less, more preferably 2 μm or more and 20 μm or less. When the light-reflecting material 211 is boron nitride, the average particle diameter is, for example, 6 μm or more and 43 μm or less. When the light-reflecting material 211 is aluminum oxide, the average particle diameter is, for example, 0.6 μm or more and 10 μm or less.

[0050] The average particle diameter of the light-reflecting material 211 can be calculated as follows.

[0051] Furthermore, the particle diameter of the light-reflecting material 211 calculated by the average particle diameter calculation method shown below is the particle diameter of the powder used as the raw material for the light-reflecting material 211 when the first light-reflecting part 21 is formed. However, the particle diameter of the raw material for the light-reflecting material 211 is substantially different from the particle diameter of the light-reflecting material 211 contained in the first light-reflecting part 21 after its formation.

[0052] The average particle diameter of the light-reflecting material 211 contained in the first light-reflecting section 21 can be measured by the following method.

[0053] <Method for Calculating Average Particle Diameter>

[0054] The particle diameter of the powder of the light-reflecting material 211 is calculated, for example, using a scanning electron microscope “TM3030Plus” manufactured by Hitachi High Technology Co., Ltd.

[0055] First, one side of carbon double-sided tape is attached to the sample stage of the microscope. Then, powder of light-reflecting material 211 is placed on the other side of the tape. The microscope's pixel count is set to 1.23 million pixels, and the magnification is set to 1000x to 2000x. Images of 100 powder particles of light-reflecting material 211 are obtained. Then, the particle diameter of each particle is determined using image analysis software. In this specification, the particle diameter of the light-reflecting material 211 powder is the largest diameter among the diameters of the main surface of the light-reflecting material 211. Next, the median diameter of the measured particles is calculated, and this calculated value is set as the average particle diameter of the light-reflecting material 211. Alternatively, the particle diameter of the light-reflecting material 211 powder can also be calculated by observing the cross-section of the first light-reflecting section 21 using SEM and measuring it using image analysis software.

[0056] The first light-reflecting portion 21 can be shaped into a desired form by supporting the light-reflecting material with a support material made of inorganic material. An example of the support material is an inorganic polymer selected from at least one of alumina, calcium oxide, and silicon oxide mixed with potassium hydroxide. The potassium hydroxide contained in the support material is formed by mixing an aqueous solution of potassium hydroxide. Through the evaporation of water contained in this aqueous solution, voids can be dispersed and formed inside the first light-reflecting portion 21, and shrinkage during formation can be suppressed. Here, it is preferable that the volume of the light-reflecting material 211 is 0.5 to 5 times the volume of the support material, including both the light-reflecting material 211 and the support material. Within this range, shrinkage during curing of the mixture can be reduced. Furthermore, it is preferable that the average particle diameter of the support material is smaller than the average particle diameter of the light-reflecting material 211. By setting such a particle diameter, the voids appearing between the fillers during mixing can be filled with the support material. Furthermore, the average particle diameter of the support material can be calculated by measuring the particle size distribution using laser diffraction.

[0057] The aforementioned light-reflecting material 211 and supporting material are formed, for example, by mixing an alkaline solution containing an alkali metal and then heating it. That is, the first light-reflecting portion 21 may contain an alkali metal derived from the alkaline solution. Potassium and / or sodium are examples of alkali metals contained in the alkaline solution. By mixing the light-reflecting material 211 and the supporting material with an alkaline solution, the light-reflecting material 211 can be appropriately dispersed in the first light-reflecting portion 21.

[0058] The first light-reflecting part 21 may also include a light-scattering material. The light-scattering material is primarily zirconium oxide or titanium oxide. When the light-emitting element emits ultraviolet light, zirconium oxide, which has low light absorption in the ultraviolet wavelength region, is preferred. By including a light-scattering material in the first light-reflecting part 21, the light reflectivity caused by the first light-reflecting part 21 is increased. This makes the brightness difference between the light-emitting surface of the light-emitting device 1 and the upper surface 20a (non-light-emitting surface) of the light-reflecting member 20 surrounding the light-emitting surface when viewed from above steeper. That is, the visual separation of the light-emitting surface side of the light-emitting device 1 can be improved. The light-scattering material can be titanium oxide alone, or a material whose surface is covered by a coating composed of one or more of silicon dioxide, aluminum oxide, zirconium oxide, zinc, organic matter, etc. Alternatively, the light-scattering material can be zirconium oxide alone, or a material whose surface is covered by a coating composed of one or more of silicon dioxide, aluminum oxide, zinc, organic matter, etc. Alternatively, stabilized zirconium oxide or partially stabilized zirconium oxide with added calcium, magnesium, yttrium, aluminum, etc., can also be used.

[0059] As described above, the second light-reflecting portion 22 contains inorganic material and is configured to contain light-reflecting material in a smaller amount than that of the first light-reflecting portion 21, or substantially not contain light-reflecting material, and is disposed on the mounting surface side of the light-emitting device. Therefore, compared to the case where the lower surface of the first light-reflecting portion 21 is used as the mounting surface of the light-emitting device, the quality of the mounting surface side can be improved. As described above, the light-reflecting material 211 contained in the first light-reflecting portion 21 increases reflectivity and functions as a core material. However, the inventors have observed that increasing the amount of light-reflecting material to obtain the desired reflectivity creates new challenges on the mounting surface side. One challenge is that if the amount of light-reflecting material (core material) increases, there is a tendency for it to be difficult to elastically deform, and there is a concern that grinding the mounting surface side during manufacturing may result in defects or cracks. Another challenge is that if an auxiliary electrode, i.e., a second electrode, is to be formed, there is a concern that sufficient adhesion to the second electrode may not be achieved.

[0060] Therefore, in this embodiment, a second light-reflecting part 22, which contains inorganic materials and is configured to contain light-reflecting materials in a smaller amount than the first light-reflecting part 21 or substantially not contain light-reflecting materials, is disposed on the mounting surface side of the light-emitting device.

[0061] Therefore, by constructing the light-reflecting component 20 using inorganic materials, new challenges arising on the mounting surface can be resolved.

[0062] The second light reflector 22 can be constructed using a support material made of an inorganic material as exemplified in the first light reflector 21, and a light reflector material 211 made of an inorganic material as exemplified in the first light reflector 21.

[0063] Furthermore, the supporting material and the light reflecting material of the second light reflecting part 22 can be the same as or different from those of the first light reflecting part 21.

[0064] However, it is preferable that the support material for the first light-reflecting part 21 and the support material for the second light-reflecting part 22 are the same inorganic material. This can improve the bonding strength of the interface between the second light-reflecting part 22 and the first light-reflecting part 21.

[0065] Furthermore, by selecting an inorganic material that can effectively function as a reinforcing material for the light-reflecting material 211 contained in the first light-reflecting part 21, and selecting an inorganic material that can improve the quality of the mounting surface compared to the first light-reflecting part 21 for the light-reflecting material 211 contained in the second light-reflecting part 22, the required functions of each light-reflecting part can be effectively performed. For example, by selecting a plate-shaped or needle-shaped inorganic material that can effectively function as a reinforcing material for the light-reflecting material 211 contained in the first light-reflecting part 21, and selecting a spherical inorganic material with low function as a reinforcing material for the light-reflecting material contained in the second light-reflecting part 22, the required functions of each reflective part can be effectively performed.

[0066] Furthermore, the second light reflecting section 22 may also contain the same light scattering material as the first light reflecting section 21. The same light scattering material as the material exemplified in the first light reflecting section 21 can be used as the light scattering material.

[0067] [Transparent components]

[0068] The light-emitting device 1 may also have a light-transmitting component 30 disposed on the light-emitting surface 11a of the light-emitting element 10. The light-transmitting component 30 may be, for example, a molded body made of resin material, ceramic, glass, etc.

[0069] The resin material for the light-transmitting component 30 is preferably a light-transmitting resin. Examples of resin materials that can be used include thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenolic resin, as well as thermoplastic resins such as polycarbonate resin, acrylic resin, methylpentene resin, and polynorbornene resin. In particular, silicone resin with excellent light resistance and heat resistance is preferred.

[0070] Additionally, the light-transmitting component 30 may include a light-diffusing component that diffuses light from the light-emitting element 10. The light-diffusing component may include, for example, titanium oxide, barium titanate, aluminum oxide, silicon oxide, etc.

[0071] Furthermore, the light-emitting device 1 may also omit the light-transmitting component 30 from the light-emitting surface 11a of the light-emitting element 10. In this case, the upper surface of the first light-reflecting portion 21 and the light-emitting surface 11a of the light-emitting element 10 constitute the upper surface of the light-emitting device 1. Since the light-transmitting component 30 is not disposed on the light-emitting surface 11a side of the light-emitting element 10, the light-emitting device 1 can be miniaturized.

[0072] The light-transmitting component 30 may also include a wavelength-converting material. Examples of wavelength-converting materials that can be used include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O). 12 Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 Ce), CCA-based fluorophores (e.g., Ca), 10 (PO4)6Cl2:Eu), SAE-based fluorophores (e.g., Sr4Al) 14 O 25 Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O) 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sulfomanganese-based phosphors (e.g., (Si,Al)3(O,N)4:Eu), or α-silicon-manganese-based phosphors (e.g., Ca(Si,Al)). 12 (O, N) 16 (Eu) and other acid nitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N) 11 Nitride-based phosphors such as Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu), or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), KSF-based phosphors (e.g., K2SiF6:Mn), and KSAF-based phosphors (e.g., K2(Si) 1-x Al x )F 6-xThe wavelength conversion materials can be Mn (where x satisfies 0 < x < 1), or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO・0.5MgF2・GeO2:Mn), quantum dots with a perovskite structure (e.g., (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I)3, where FA and MA represent formamid and methylammonium groups, respectively), group II-VI quantum dots (e.g., CdSe), group III-V quantum dots (e.g., InP), or quantum dots with a chalcopyrite structure (e.g., (Ag, Cu)(In, Ga)(S, Se)2), etc. Furthermore, one of the above-mentioned wavelength conversion materials can be used alone, or two or more of the above-mentioned wavelength conversion materials can be used in combination.

[0073] Examples of light-transmitting components 30 that serve as wavelength-converting materials include components made of resin materials, ceramics, glass, etc., containing particles of the aforementioned wavelength-converting material, or sintered bodies of the aforementioned wavelength-converting material. Alternatively, the light-transmitting component 30 may also be a component made of resin material containing particles of the wavelength-converting material disposed on one surface of a molded body such as resin material, ceramics, or glass.

[0074] like Figure 1 as well as Figure 3 As shown, the side surface of the light-transmitting component 30 may be covered by the first light-reflecting part 21, but it may not be covered by the first light-reflecting part 21. For example, it may be coplanar with the side surface of the light-reflecting component 20, thus forming the outer side surface of the light-emitting device 1.

[0075] [Second electrode]

[0076] The light-emitting device 1 may also have a second electrode 13 that is engaged with the second surface 12b of the first electrode 12. The second electrode 13 may be provided extending from the second surface 12b toward the outer surface of the second light-reflecting portion 22.

[0077] The second electrode 13 primarily functions as an external electrode of the light-emitting device 1. The material of the second electrode 13 is preferably selected to have superior corrosion resistance and oxidation resistance compared to the first electrode 12. For example, the outermost layer is preferably a platinum-series metal such as Au or Pt. Furthermore, considering the use of solder to mount the light-emitting device 1, Au, which has good solderability, is preferably used on the outermost surface of the second electrode 13.

[0078] The second electrode 13 can be composed of a single layer of a single material or a combination of layers of different materials. In particular, a high-melting-point second electrode 13 is preferred, such as Ru, Mo, Ta, and W. Furthermore, by placing these high-melting-point metals between the first electrode 12 and the outermost layer of the light-emitting element 10, a diffusion-preventing layer can be formed that reduces the diffusion of Sn contained in the solder into the first electrode 12 or layers close to it. Examples of stacked structures with such a diffusion-preventing layer include Ni / Ru / Au and Ti / Pt / Au. Additionally, the thickness of the diffusion-preventing layer (e.g., Ru) is preferably around 10 Å to 1000 Å.

[0079] As described above, the light-emitting device 1 according to an embodiment of the present invention improves heat resistance by providing the light-reflecting member 20. Furthermore, by providing the second light-reflecting part 22, shape damage to the first light-reflecting part 21 during manufacturing of the light-emitting device 1 can be reduced. As an example, in the [electrode exposure process] described later, since the first light-reflecting part 21 is covered by the second light-reflecting part 22, the impact of processing on the first light-reflecting part 21 can be reduced.

[0080] Next, the manufacturing method of the light-emitting device according to the embodiments of the present invention will be described.

[0081] The manufacturing method of the light-emitting device 1 of the present invention includes the following steps:

[0082] The process of preparing a light-emitting element 10 includes: a semiconductor structure 11 having a light-emitting surface 11a, an electrode forming surface 11b located on the opposite side of the light-emitting surface 11a, and a side surface 11c located between the light-emitting surface 11a and the electrode forming surface 11b; and a first electrode 12 disposed on the electrode forming surface 11b.

[0083] The process of preparing a light-reflecting component 20, which includes: a first light-reflecting portion 21s made of an inorganic material containing a light-reflecting material 211 and having plasticity; and a second light-reflecting portion 22s made of an inorganic material containing a less amount of light-reflecting material 211 than the first light-reflecting portion 21s or substantially not containing light-reflecting material 211 and having plasticity, wherein the second light-reflecting portion 22s is disposed below the first light-reflecting portion 21s; and

[0084] The process of pressing the electrode forming surface 11b of the light-emitting element 10 by contacting the electrode 12 with the first light-reflecting portion 21s of the light-reflecting component 20, and causing the side surface 11c and the electrode forming surface 11b of the semiconductor structure 11 to sink so as to be covered by the first light-reflecting portion 21s.

[0085] Furthermore, it may also include "the process of preparing and configuring the light-transmitting component 30", "the process of exposing the first electrode 12" and "the process of forming the second electrode 13".

[0086] Alternatively, either the "process of preparing the light-emitting element 10" or the "process of preparing the light-reflecting component 20" can be implemented first, or they can be implemented in parallel.

[0087] Furthermore, any "process of configuring the light-transmitting component 30" is performed between the "process of preparing the light-emitting element 10" and the "process of settling", and the "process of exposing the first electrode 12" and the "process of forming the second electrode 13" are performed after the "process of settling".

[0088] The following describes in detail the manufacturing method of the light-emitting device 1 of the present invention, including any steps.

[0089] Additionally, in the following explanation, the referenced Figures 4 to 10 The document also includes illustrations of any steps involved.

[0090] [Process for preparing the light-emitting element 10]

[0091] First, a light-emitting element 10 is prepared, which includes: a semiconductor structure 11 having a light-emitting surface 11a and an electrode forming surface 11b located on the side opposite to the light-emitting surface 11a; and a first electrode 12 disposed on the electrode forming surface 11b and having a first surface 12a opposite to the electrode forming surface 11b, a second surface 12b located on the side opposite to the first surface 12a, and a side surface 12c located between the first surface 12a and the second surface 12b.

[0092] [The process of preparing and configuring the light-transmitting component 30]

[0093] In the case of including the light-transmitting component 30, the light-transmitting component 30 is prepared and the light-emitting element 10 is disposed on the light-transmitting component 30.

[0094] The light-transmitting component 30 contains wavelength-converting materials such as YAG phosphors, and as described above, may include a light-diffusing component. The light-diffusing component may be titanium oxide, barium titanate, aluminum oxide, silicon oxide, etc.

[0095] [Process for preparing light-reflecting component 20]

[0096] The process of preparing the light-reflecting component 20 further includes the following steps: preparing a first light-reflecting part 21s, which is made of an inorganic material containing light-reflecting material 211 and has plasticity; preparing a second light-reflecting part 22s, which is made of an inorganic material containing light-reflecting material 211 in a smaller amount than the first light-reflecting part 21s or substantially not containing light-reflecting material 211 and has plasticity; and preparing the light-reflecting component 20, which is formed by overlapping and pressing the plastic first light-reflecting part 21s and the plastic second light-reflecting part 22s, and stacking the first light-reflecting part 21s and the second light-reflecting part 22s.

[0097] The following describes the process of preparing the first light reflector 21s, the process of preparing the second light reflector 22s, and the process of preparing the light reflector 20 in sequence.

[0098] Furthermore, in each of the accompanying drawings, the first light-reflecting portion in sheet form before division is labeled with the reference numeral 21s, and the second light-reflecting portion in sheet form before division is labeled with the reference numeral 22s.

[0099] In the process of preparing the first light reflector 21s, firstly, an inorganic material that will become the main material (support material 212) and a light reflector material 211 with a higher refractive index than the inorganic material are mixed with an alkaline solution to prepare a first mixed material.

[0100] Next, for example, the first mixed material is pressed by stamping to prepare a first light-reflecting part 21s of a specified thickness.

[0101] Here, the mixing ratio of the inorganic material that becomes the main material and the light-reflecting material 211 with the alkaline solution in the process of preparing the first mixed material, the pressure applied during the stamping process of preparing the first light-reflecting part 21s, etc., are set in consideration of the deformation caused by the pressure applied in the process of preparing the light-reflecting component 20, which will be described later, so as to form the first light-reflecting part 21s with a specified thickness.

[0102] In addition, the alkaline solution in the process of preparing the first mixed material is mixed, for example by a degassing device that can reduce pressure and stir, until a uniform viscosity can be obtained.

[0103] In the process of preparing the second light reflector 22s, firstly, a second mixed material is prepared by mixing an inorganic material that is only the main material (support material 212) or an inorganic material that includes an inorganic material that is the main material (support material 212) and light reflector material 211 in a smaller amount than the first light reflector 21s with an alkaline solution.

[0104] Next, for example, the second mixed material is pressed by stamping to prepare a second light-reflecting part 22s of a specified thickness.

[0105] Here, the inorganic material that becomes the main material or the inorganic material that includes the main material (support material 212) and the light reflective material 211, the mixing ratio with the alkaline solution, and the pressure applied during the stamping process to prepare the second light reflective part 22s are appropriately set in consideration of the deformation caused by the pressure applied during the process of preparing the light reflective component 20, as described later, so as to form the second light reflective part 22s of a specified thickness.

[0106] In addition, the alkaline solution in the process of preparing the second mixed material is mixed, for example, by a degassing device that can reduce pressure and stir, until a uniform viscosity can be obtained.

[0107] In the process of preparing the light-reflecting component 20, such as Figure 5 As shown, a light-reflecting component 20, consisting of a first light-reflecting portion 21s and a second light-reflecting portion 22s, is manufactured by overlapping the first light-reflecting portion 21s and the second light-reflecting portion 22s and applying pressure using a stamping process or similar method. Here, the first light-reflecting portion 21s tends to have higher plasticity (flowability) because it contains more light-reflecting material 211 (reinforcement) than the second light-reflecting portion 22s. Figure 4 as well as Figure 5 As schematically shown, the first light-reflecting portion 21s tends to be thinner than the second light-reflecting portion 22s due to pressure. The degree of plasticity (flowability) is also an important parameter in the process of sinking the light-emitting element 10 to the light-reflecting component 20, which will be described later. Therefore, the plasticity of the first light-reflecting portion 21s and the second light-reflecting portion 22s, especially the first light-reflecting portion 21s, is preferably set with consideration of the content of the light-reflecting material 211.

[0108] [The process of lowering the light-emitting element 10 toward the light-reflecting component 20]

[0109] In the process of sinking the light-emitting element 10 toward the light-reflecting component 20, the electrode is brought into contact with the first light-reflecting portion 21s of the light-reflecting component 20 to press the electrode forming surface 11b of the light-emitting element 10, so that the side surface 11c and the electrode forming surface 11b of the semiconductor structure 11 sink toward the light-reflecting component 20 so that they are covered by the first light-reflecting portion 21s.

[0110] For example, such as Figure 6As shown, in the case including the light-emitting surface 11a of the light-emitting element 10 and the light-transmitting member 30, by attaching the upper surface 30a of the light-transmitting member 30 to one side of the support plate 50, and by making the first electrode 12 of the light-emitting element 10 attached to the support plate 50 contact the first light-reflecting part 21s from the first light-reflecting part 21s side and further pressing it, as shown... Figure 7 As shown, the light-emitting element 10 is lowered toward the light-reflecting component 20. During this stage, both the first light-reflecting portion 21s and the second light-reflecting portion 22s remain in a malleable state. A portion of the electrode forming surface 11b of the light-emitting element 10 and a portion of the electrode forming surface 11b of the side surface 12c of the first electrode 12 of the light-emitting element 10 are covered by the first light-reflecting portion 21s, while the second light-reflecting portion 22s directly below and near the light-emitting element 10 becomes thinner. On the other hand, the second light-reflecting portions 22s between adjacent light-emitting elements 10 become thicker. That is, at least a portion of the boundary between the first light-reflecting portion 21s and the second light-reflecting portion 22s tilts or bends toward the upper surface as it moves away from the first electrode 12.

[0111] Furthermore, after the light-emitting element 10 is deposited onto the light-reflecting component 20, the light-reflecting component 20 is heated and cured.

[0112] In addition, such as Figure 8 As shown, the support plate 50 is removed before or after the light-reflecting component 20 is cured.

[0113] [Electrode exposure process]

[0114] In the electrode exposure process, for example, the second surface 12b of the first electrode 12 is exposed from the second light-reflecting part 22s by grinding the second light-reflecting part 22s.

[0115] [Second electrode formation process]

[0116] In the second electrode forming process, such as Figure 9 As shown, a second electrode 13 is formed that is joined to the second surface 12b of the first electrode 12 and extends from the second surface 12b to the outer surface of the second light-reflecting portion 22s.

[0117] Since the second light reflecting part 22s contains little or no light reflecting material 211, which functions as a bone material, the second electrode 13 is formed on the outer surface of the second light reflecting part 22s. This makes the light reflecting component 20 adhere well to the second electrode 13 and suppresses the peeling of the second electrode 13.

[0118] After the second electrode 13 is formed, it is cut at a specified cutting position to achieve monolithization.

[0119] The above process is used to manufacture the light-emitting device 1.

[0120] In the light-emitting device 1 of the embodiments described above, an example is shown where at least a portion of the boundary between the first light-reflecting portion 21 and the second light-reflecting portion 22 tilts toward the upper surface as it moves away from the first electrode 12. However, the light-emitting device 1 of the present invention is not limited to this, as... Figure 2 As shown, the boundary between the first light reflecting part 21 and the second light reflecting part 22 may, for example, be parallel to the mounting surface.

[0121] Examples and reference examples

[0122] In this embodiment, a light-reflecting component 20 is fabricated using a first light-reflecting part 21 formed from a first mixed material consisting of (a) flake-shaped boron nitride (light-reflecting material): silicon dioxide (supporting material): titanium dioxide (light-scattering material) prepared in a weight ratio of 2.5:2.5:1, and mixed with an aqueous solution of potassium hydroxide (KOH) in a weight ratio of 6:2; and (b) a second light-reflecting part 22 formed from a second mixed material consisting of spherical alumina (light-reflecting material): silicon dioxide (supporting material): titanium dioxide (light-scattering material) prepared in a weight ratio of 2:3.2:4, and mixed with an aqueous solution of potassium hydroxide (KOH) in a weight ratio of 9.2:2.3. Figure 1 The light-emitting device 1 shown.

[0123] Here, a light-emitting diode with a peak wavelength of 460 nm is used as the light-emitting element 10, and a component formed by mixing and sintering YAG phosphor and alumina is used as the light-transmitting component.

[0124] A second electrode 13 is formed on the surface of the second light reflector 22 on the mounting surface side as described above.

[0125] In contrast, as a reference example, the light-emitting device was manufactured in the same manner as in the embodiment, except that only the light-reflecting part 21 is used to form the light-reflecting component 20, and the second electrode 13 is formed on the surface of the first light-reflecting part 21 exposed on the mounting surface side.

[0126] The light-emitting device of the embodiment can achieve better adhesion than the light-emitting device of the reference example.

[0127] Furthermore, the implementation methods disclosed herein are merely examples in all respects and should not be construed as limiting interpretations.

[0128] The light-emitting device and the method for manufacturing the light-emitting device of the present invention include the following embodiments.

[0129] [Item 1] A light-emitting device comprising: a light-emitting element comprising: a semiconductor structure having a light-emitting surface, an electrode forming surface located opposite to the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; and an electrode disposed on the electrode forming surface; and a light-reflecting member having a lower surface and covering the side surface of the semiconductor structure and the side surface of the electrode, the electrode having an exposed surface not covered by the light-reflecting member, the light-reflecting member comprising: a first light-reflecting portion covering the side surface of the semiconductor structure and comprising an inorganic material as the main material and a light-reflecting material with a refractive index higher than the inorganic material; and a second light-reflecting portion having the lower surface covering at least a portion of the side surface of the electrode, comprising the inorganic material, and comprising the light-reflecting material in a less amount than the first light-reflecting portion or substantially not comprising the light-reflecting material.

[0130] [Item 2] The light-emitting device according to technical solution 1 includes: a light-transmitting component disposed on the light-emitting surface of the semiconductor structure, and the first light-reflecting portion further covering the side surface of the light-transmitting component.

[0131] [Item 3] The light-emitting device according to item 1 or 2, wherein the first light-reflecting part further covers a portion of the side surface of the electrode.

[0132] [Item 4] The light-emitting device according to any one of items 1 to 3, wherein at least a portion of the boundary between the first light-reflecting portion and the second light-reflecting portion tilts or bends toward the upper surface as it moves away from the electrode.

[0133] [Item 5] The light-emitting device according to any one of items 1 to 4, wherein the side surface of the light-reflecting member includes: a first side surface of the first light-reflecting portion and a second side surface of the second light-reflecting portion located below the first side surface.

[0134] [Item 6] The light-emitting device according to any one of items 1 to 5, wherein an auxiliary electrode is provided, which is disposed on the lower surface of at least a portion of the light-reflecting component and the lower surface of the electrode, and is electrically connected to the electrode.

[0135] [Item 7] The light-emitting device according to any one of items 1 to 6, wherein the light-reflecting material comprises at least one selected from boron nitride, silicon nitride, aluminum nitride and aluminum oxide.

[0136] [Item 8] The light-emitting device according to any one of items 1 to 7, wherein the light-reflecting material comprises plate-shaped or needle-shaped particles.

[0137] [Item 9] The light-emitting device according to any one of items 1 to 8, wherein the first light-reflecting part and the second light-reflecting part contain alkali metal.

[0138] [Item 10] A method for manufacturing a light-emitting device includes the following steps: a step of preparing a light-emitting element, the light-emitting element comprising: a semiconductor structure having a light-emitting surface, an electrode forming surface located on the opposite side of the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; and an electrode disposed on the electrode forming surface; a step of preparing a light-reflecting inorganic component, the light-reflecting inorganic component comprising: a first light-reflecting portion made of an inorganic material containing a light-reflecting material and having plasticity; and a second light-reflecting portion made of an inorganic material containing a light-reflecting material in a smaller amount than the first light-reflecting portion or substantially not containing a light-reflecting material and having plasticity, and the second light-reflecting portion being disposed below the first light-reflecting portion; and a step of pressing the electrode forming surface of the light-emitting element by contacting the first light-reflecting portion side of the light-reflecting inorganic component with the first light-reflecting portion, and causing the side surface of the semiconductor structure and the electrode forming surface to sink so as to be covered by the first light-reflecting portion.

[0139] [Item 11] The method for manufacturing the light-emitting device according to item 10 further comprises:

[0140] After the process of sinking the light-emitting element, a portion of the light-reflecting inorganic component after sinking the light-emitting element is removed from the second light-reflecting part side, and the electrode is exposed from the second light-reflecting part.

[0141] Explanation of reference numerals in the attached figures

[0142] 1…Light-emitting device

[0143] 10…Light-emitting elements

[0144] 11… Semiconductor Structure

[0145] 11a…luminous surface

[0146] 11b…Electrode Forming Surface

[0147] 11c…side view

[0148] 12…First Electrode

[0149] 12a…First page

[0150] 12b…Second page

[0151] 12c…side view

[0152] 13…Second Electrode

[0153] 20…light reflecting components

[0154] 21…First light reflector

[0155] 22…Second light reflector

[0156] 30…Transparent components

[0157] 50… Support plate.

Claims

1. A light-emitting device, comprising: A light-emitting element includes: a semiconductor structure having a light-emitting surface, an electrode forming surface located opposite to the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; and an electrode disposed on the electrode forming surface; and A light-reflecting component having a lower surface that covers the aforementioned side surface of the semiconductor structure and the side surface of the aforementioned electrode. The aforementioned electrodes have exposed surfaces that are not covered by the aforementioned light-reflecting components. The aforementioned light-reflecting component includes: The first light-reflecting portion covers the side surface of the aforementioned semiconductor structure and is composed of an inorganic material as the main material and a light-reflecting material with a refractive index higher than that of the inorganic material; and The second light-reflecting portion has the aforementioned lower surface, covers at least a portion of the side surface of the aforementioned electrode, contains the aforementioned inorganic material, and contains the aforementioned light-reflecting material in a smaller amount than that of the first light-reflecting portion or substantially does not contain the aforementioned light-reflecting material.

2. The light-emitting device according to claim 1, comprising: A light-transmitting component disposed on the light-emitting surface of the aforementioned semiconductor structure. The first light-reflecting part also covers the side of the light-transmitting component.

3. The light-emitting device according to claim 1 or 2, wherein, The aforementioned first light-reflecting portion also covers a portion of the side surface of the aforementioned electrode.

4. The light-emitting device according to any one of claims 1 to 3, wherein, At least a portion of the boundary between the first light reflector and the second light reflector tilts or bends toward the upper surface as it moves away from the electrode.

5. The light-emitting device according to any one of claims 1 to 4, wherein, The side surface of the aforementioned light reflecting component includes: a first side surface of the aforementioned first light reflecting portion, and a second side surface of the aforementioned second light reflecting portion located below the first side surface.

6. The light-emitting device according to any one of claims 1 to 5, wherein, An auxiliary electrode is provided, which is disposed on the lower surface of at least a portion of the light-reflecting component and the lower surface of the electrode, and is electrically connected to the electrode.

7. The light-emitting device according to any one of claims 1 to 6, wherein, The aforementioned light-reflecting material includes at least one selected from boron nitride, silicon nitride, aluminum nitride, and aluminum oxide.

8. The light-emitting device according to any one of claims 1 to 7, wherein, The aforementioned light-reflecting materials contain plate-shaped or needle-shaped particles.

9. The light-emitting device according to any one of claims 1 to 8, wherein, The first light-reflecting part and the second light-reflecting part mentioned above contain alkali metals.

10. A method for manufacturing a light-emitting device, comprising the following steps: A process for preparing a light-emitting element, the light-emitting element comprising: a semiconductor structure having a light-emitting surface, an electrode forming surface located on the opposite side of the light-emitting surface, and a side surface located between the light-emitting surface and the electrode forming surface; and an electrode disposed on the electrode forming surface; A process for preparing a light-reflecting inorganic component, the light-reflecting inorganic component comprising: a first light-reflecting portion made of an inorganic material containing a light-reflecting material and having malleability; and a second light-reflecting portion made of an inorganic material containing a light-reflecting material in a smaller amount than that of the first light-reflecting portion or substantially containing no light-reflecting material, and having malleability, wherein the second light-reflecting portion is disposed below the first light-reflecting portion; and The process of pressing the electrode forming surface of the light-emitting element by contacting the first light-reflecting portion of the light-reflecting inorganic component with the first light-reflecting portion, and causing the side surface and electrode forming surface of the semiconductor structure to sink so as to be covered by the first light-reflecting portion.

11. The method for manufacturing a light-emitting device according to claim 10, further comprising: After the process of sinking the light-emitting element, a portion of the light-reflecting inorganic component after sinking the light-emitting element is removed from the second light-reflecting part side, and the electrode is exposed from the second light-reflecting part.

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