Surface coating process of semiconductor equipment part

Abstract

The invention relates to a semiconductor equipment part surface coating process which comprises the following steps: S1, yttrium-containing composite coating deposition: putting a part into ALD deposition equipment, and introducing a precursor for coating deposition to obtain a part on which a yttrium-containing composite coating grows; and S2, plasma bombardment: carrying out plasma bombardment on the part on which the yttrium-containing composite coating is grown in plasma equipment so as to form a composite gradient fluorinated coating on the surface of the part and finally obtain a product. According to the method, a fluoride precursor does not need to be developed, the existing mature ALD process continues to be used, the development period is greatly shortened, the cost is reduced, and the prepared coating has good corrosion resistance, bonding performance and heat resistance.

Description

Technical Field

[0001] This application relates to the field of atomic layer deposition coating technology for semiconductor equipment components, and in particular to a surface coating process for semiconductor equipment components. Background Technology

[0002] In the field of semiconductor equipment, in order to protect the cavity components from corrosion by corrosive gases and plasma etching, a corrosion-resistant ceramic coating needs to be deposited on the surface of the cavity components. The materials are generally alumina, yttrium oxide, yttrium fluoride, yttrium fluoride or a combination of these materials.

[0003] Currently, for components with particularly complex shapes, such as showerheads, gas pipes, and valves, ALD (Atomic Layer Deposition) technology is required to achieve uniform coverage of the ceramic coating. This is because ALD technology has excellent step coverage and can uniformly cover the pores of showerheads, pipes, and valves.

[0004] However, most coatings prepared by current ALD technology are oxide coatings, which have poor protection against corrosive gases containing fluorine. There is an urgent need to develop ALD fluoride and fluoride oxide coatings. The quality of ALD coatings depends on the structure of the precursor. Currently, the more mature precursors are all precursors for oxide coatings. However, there is less research on precursors for fluorides and fluoride oxides. At present, there are no mature fluoride or fluoride oxide coating precursors available on the market. Developing new precursors requires high investment and a long research and development cycle, which cannot meet the current market demand. Summary of the Invention

[0005] To improve the resistance of the prepared coating to corrosion by fluorine-containing gases, this application provides a surface coating process for semiconductor device parts.

[0006] This application provides a surface coating process for semiconductor device components, employing the following technical solution: A surface coating process for a semiconductor device component includes the following steps: S1. Yttrium-containing composite coating deposition: The part is placed into the ALD deposition equipment, and the precursor is introduced to perform coating deposition to obtain the part with a yttrium-containing composite coating. S2. Plasma bombardment: Parts with yttrium-containing composite coatings are subjected to plasma bombardment in a plasma device to form a composite gradient fluorinated coating on the surface of the parts, ultimately yielding the product.

[0007] By adopting the above technical solution, using yttrium oxide ALD deposition process as a basis, a yttrium-containing composite coating is deposited on the surface of the part. Subsequently, through plasma fluorination treatment, the part after the yttrium-containing composite coating is deposited is transformed in situ into a yttrium fluoride and yttrium fluoride oxide composite coating. This greatly improves the development cycle of fluorine-resistant plasma coatings, reduces process implementation costs, and improves the coating's resistance to fluorine-containing gas corrosion.

[0008] Preferably, in step S1, the precursor includes 3-butylcyclopentadiene yttrium.

[0009] By adopting the above technical solution, 3-butylcyclopentadiene yttrium is a mature precursor used in ALD deposition process and can be directly integrated into the existing production process. It has excellent volatility and good hydrolysis controllability, which makes the coating deposition rate more stable. In addition, the organic ligands are easy to desorb and leave no residue. The prepared yttrium-containing composite coating is dense and uniform, providing a high-quality foundation for the formation of fluorine-containing coatings after subsequent plasma bombardment, thereby further improving the overall adhesion and corrosion resistance of the prepared coating.

[0010] Preferably, the thickness of the yttrium-containing composite coating is 290-310 nm, and the ratio of O to Y in the yttrium-containing composite coating is (1.25-1.35):1.

[0011] By adopting the above technical solution, the yttrium oxide coating is preferably within the above range, and the ratio of O to Y is within the above range. The prepared yttrium-containing composite coating has good structural stability and can form an appropriate amount of oxygen vacancies, which provide directional penetration channels for F during subsequent plasma bombardment, thereby improving the stability of the composite gradient fluorinated coating.

[0012] Preferably, during the plasma bombardment process, the plasma gas includes argon and a fluorine-containing gas, wherein the fluorine-containing gas includes nitrogen trifluoride and sulfur hexafluoride.

[0013] By adopting the above technical solution, argon is used as both the carrier gas and the dilution gas to form a composite gradient fluorinated coating. The process is simple and highly efficient.

[0014] Preferably, tri(cyclopentadienyl)cerium is added during the deposition of the yttrium-containing composite coating.

[0015] By adopting the above technical solution, a tri(cyclopentadienyl)cerium precursor is introduced, which is structurally homologous to 3-butylcyclopentadienyl yttrium and has good compatibility, enabling deposition through an ALD device. At the same time, the introduction of Ce element optimizes the oxygen vacancy distribution through variable valence characteristics, improves the uniformity of fluorine ion penetration, and further enhances the corrosion resistance of the fluorine-containing coating. The process cost is low, and the overall performance of the coating is effectively improved.

[0016] Preferably, the molar ratio between tri(cyclopentadienyl)cerium and 3-butylcyclopentadienylyttrium is (0.13-0.17):1.

[0017] By adopting the above technical solution, and preferably within the above range the molar ratio between tri(cyclopentadienyl)cerium and 3-butylcyclopentadienyl yttrium, uniform lattice doping of Ce can be achieved, further regulating oxygen vacancies and reducing the occurrence of lattice distortion or coating defects caused by excessive Ce, thereby further improving the formation stability of fluorine-containing coatings.

[0018] Preferably, tris(cyclopentadienyl)lanthanum is added during the deposition of the yttrium-containing composite coating.

[0019] By adopting the above technical solution, tris(cyclopentadienyl)lanthanum is introduced and transported synchronously with tris(cyclopentadienyl)cerium and 3-butylcyclopentadienylyttrium. The antimagnetic properties of lanthanum can reduce the coupling interference between plasma and electromagnetic field, thereby improving the quality of the product.

[0020] Preferably, the molar ratio between tri(cyclopentadienyl)lanthanum and 3-butylcyclopentadienylyttrium is (0.62-0.72):1.

[0021] By adopting the above technical solution, the molar ratio between tri(cyclopentadienyl)lanthanum and 3-butylcyclopentadienylyttrium is preferably within the above range. This ratio allows the antimagnetic interference effect of lanthanum to be fully utilized, while avoiding lattice mismatch or deposition rate fluctuations caused by excessive lanthanum content. This further improves the density and uniformity of the ternary doped yttrium composite coating.

[0022] Preferably, in step S2, during the plasma bombardment process, the plasma power is 1100-1300W and the bias voltage is 750-850V.

[0023] By adopting the above technical solution, the plasma power and bias voltage during the plasma bombardment process are preferably within the above range. This optimization is based on the dissociation efficiency of NF3 and the penetration depth of F ions. This results in the formation of a gradient fluorination layer, which allows the fluorine-containing gas to be utilized efficiently and react fully with the ALD oxide coating. This improves the quality of the generated fluorine-containing coating and further enhances the corrosion resistance of the prepared parts.

[0024] In summary, this application includes at least one of the following beneficial technical effects: By adopting the mature yttrium oxide ALD process combined with subsequent plasma fluorination treatment, the in-situ and efficient conversion from yttrium-containing composite coatings to high-performance YF3 / YOF composite coatings was achieved, which significantly shortened the development cycle of fluorine-resistant coatings and greatly reduced the process cost. By selecting the 3-butylcyclopentadiene yttrium precursor and its reaction process with water, a non-stoichiometric yttrium-containing composite coating with a stable deposition rate, dense and uniform structure, and rich in oxygen vacancies of a specific concentration was obtained, laying an ideal structural foundation for the efficient and uniform infiltration of fluoride ions and the formation of a stable gradient fluorinated layer. By introducing tris(cyclopentadienyl)cerium and tris(cyclopentadienyl)lanthanum and controlling their specific molar ratio with the yttrium precursor, the overall performance of the coating is improved by utilizing the synergistic effect between elements without changing the core low-cost process framework. This ensures that the yttrium-containing composite coating is dense and uniform, the fluorine-containing coating is formed stably, lattice distortion and defects are reduced, and the coating adhesion, uniformity and long-term stability are improved. Detailed Implementation

[0025] The present application will be further described in detail below with reference to the embodiments: Raw material description: All raw materials in the examples are commercially available; the semiconductor components are selected as pipes and valves. Example 1

[0026] Surface coatings for semiconductor equipment components: S1. Yttrium-containing composite coating deposition: The parts are immersed in acetone solution and ultrasonically cleaned at 40°C for 15 minutes at a power of 300W and a frequency of 40kHz. After cleaning, the surface of the parts is dried with nitrogen gas, and then placed in a plasma cleaning equipment with a vacuum of 1.0×10⁻⁶. -3 Pa, 99.99% oxygen was introduced, and the metal was treated at 200W plasma power for 5 minutes to remove residual particles and organic matter from the metal surface, resulting in a cleaned part. The cleaned part was then placed in an ALD coating equipment, using 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum as precursors, H2O as reactants, and 0.25 mol / L diethanolamine as a lattice modifier. Nitrogen was used as the carrier gas and purge gas. The molar ratio of 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum was 1:0.13:0.62, followed by the deposition process. ① A 5-second pulse is used to introduce a 3-butylcyclopentadiene-yttrium carrier gas mixture; ②2. A 20-second pulse is applied to introduce N2; ③ A 5-second pulse is used to introduce a tri(cyclopentadienyl)cerium carrier gas mixture; ④ A 20-second pulse is used to introduce N2; ⑤ A 5-second pulse is used to introduce a mixture of tri(cyclopentadienyl)lanthanum carrier gas; ⑥ A 20-second pulse is used to introduce N2; ⑦ A 3-second pulse is used to introduce aqueous N2 containing diethanolamine; ⑧ A 30-second pulse is used to introduce N2; The above ①-⑧ constitute one cycle. Repeating this process will result in a yttrium-containing composite coating with a thickness of 290 nm and an O to Y ratio of 1.25:1. S2. Plasma Bombardment: The part after the yttrium-containing composite coating is deposited in step S1 is removed from the reaction chamber, and the surface of the part is cleaned by purging with 99.99% nitrogen gas. The cleaned part is then placed into the reaction chamber of the reactive ion etching equipment, the chamber is then closed, the vacuum system is started, and the vacuum is evacuated to 1.0 × 10⁻⁶. -5 Pa, then argon and nitrogen trifluoride with a gas flow ratio of 10:1 are introduced, and the working pressure of the chamber is stabilized at 10 mTorr, the plasma power is 1100W, the bias voltage is 750V, and plasma bombardment is carried out for 60 minutes to obtain a composite gradient fluorinated coating on the surface of the part, and finally the product is obtained. Example 2

[0027] Surface coatings for semiconductor equipment components: S1. Yttrium-containing composite coating deposition: The parts are immersed in acetone solution and ultrasonically cleaned at 40°C for 15 minutes at a power of 300W and a frequency of 40kHz. After cleaning, the surface of the parts is dried with nitrogen gas, and then placed in a plasma cleaning equipment with a vacuum of 1.0×10⁻⁶. -3 Pa, 99.99% oxygen was introduced, and the metal was treated at 200W plasma power for 5 minutes to remove residual particles and organic matter from the metal surface, resulting in a cleaned part. The cleaned part was then placed in an ALD coating equipment, using 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum as precursors, H2O as reactants, and 0.25 mol / L diethanolamine as a lattice modifier. Nitrogen was used as the carrier gas and purge gas. The molar ratio of 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum was 1:0.17:0.72, followed by the deposition process. ① A 5-second pulse is used to introduce a 3-butylcyclopentadiene-yttrium carrier gas mixture; ②2. A 20-second pulse is applied to introduce N2; ③ A 5-second pulse is used to introduce a tri(cyclopentadienyl)cerium carrier gas mixture; ④ A 20-second pulse is used to introduce N2; ⑤ A 5-second pulse is used to introduce a mixture of tri(cyclopentadienyl)lanthanum carrier gas; ⑥ A 20-second pulse is used to introduce N2; ⑦ A 3-second pulse is used to introduce aqueous N2 containing diethanolamine; ⑧ A 30-second pulse is used to introduce N2; The above ①-⑧ constitute one cycle. Repeating this process will result in a yttrium-containing composite coating with a thickness of 310 nm and an O to Y ratio of 1.35:1. S2. Plasma Bombardment: The part after the yttrium-containing composite coating is deposited in step S1 is removed from the reaction chamber, and the surface of the part is cleaned by purging with 99.99% nitrogen gas. The cleaned part is then placed into the reaction chamber of the reactive ion etching equipment, the chamber is then closed, the vacuum system is started, and the vacuum is evacuated to 1.0 × 10⁻⁶. -5 Pa, then argon and nitrogen trifluoride with a gas flow ratio of 10:1 are introduced, and the working pressure of the chamber is stabilized at 10 mTorr, the plasma power is 1300W, the bias voltage is 850V, and plasma bombardment is carried out for 60 minutes to obtain a composite gradient fluorinated coating on the surface of the part, and finally the product is obtained. Example 3

[0028] Surface coatings for semiconductor equipment components: S1. Yttrium-containing composite coating deposition: The parts are immersed in acetone solution and ultrasonically cleaned at 40°C for 15 minutes at a power of 300W and a frequency of 40kHz. After cleaning, the surface of the parts is dried with nitrogen gas, and then placed in a plasma cleaning equipment with a vacuum of 1.0×10⁻⁶. -3 Pa, 99.99% oxygen was introduced, and the metal was treated at 200W plasma power for 5 minutes to remove residual particles and organic matter from the metal surface, resulting in a cleaned part. The cleaned part was then placed in an ALD coating equipment, using 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum as precursors, H2O as reactant, and 0.25 mol / L diethanolamine as a lattice modifier. Nitrogen was used as the carrier gas and purge gas. The molar ratio of 3-butylcyclopentadienyl yttrium, tris(cyclopentadienyl)cerium, and tris(cyclopentadienyl)lanthanum was 1:0.15:0.67, followed by the deposition process. ① A 5-second pulse is used to introduce a 3-butylcyclopentadiene-yttrium carrier gas mixture; ②2. A 20-second pulse is applied to introduce N2; ③ A 5-second pulse is used to introduce a tri(cyclopentadienyl)cerium carrier gas mixture; ④ A 20-second pulse is used to introduce N2; ⑤ A 5-second pulse is used to introduce a mixture of tri(cyclopentadienyl)lanthanum carrier gas; ⑥ A 20-second pulse is used to introduce N2; ⑦ A 3-second pulse is used to introduce aqueous N2 containing diethanolamine; ⑧ A 30-second pulse is used to introduce N2; The above ①-⑧ constitute one cycle. Repeat this process to obtain a yttrium-containing composite coating with a thickness of 300 nm and an O to Y ratio of 1.3:1. S2. Plasma Bombardment: The part after the yttrium-containing composite coating is deposited in step S1 is removed from the reaction chamber, and the surface of the part is cleaned by purging with 99.99% nitrogen gas. The cleaned part is then placed into the reaction chamber of the reactive ion etching equipment, the chamber is then closed, the vacuum system is started, and the vacuum is evacuated to 1.0 × 10⁻⁶. -5 Pa, then argon and nitrogen trifluoride with a gas flow ratio of 10:1 are introduced, and the working pressure of the chamber is stabilized at 10 mTorr. The plasma power is 1200W, the bias voltage is 800V, and plasma bombardment is performed for 60 minutes to obtain a composite gradient fluorinated coating on the surface of the part, and finally the product is obtained. Example 4

[0029] Example 4 is based on Example 3. In step S1 of Example 4, the molar ratio between 3-butylcyclopentadienylyttrium, tris(cyclopentadienyl)cerium and tris(cyclopentadienyl)lanthanum is 1:0.1:0.77. Example 5

[0030] Example 5 is based on Example 3. In step S1 of Example 5, the molar ratio between 3-butylcyclopentadienylyttrium, tris(cyclopentadienyl)cerium and tris(cyclopentadienyl)lanthanum is 1:0.18:0.77. Example 6

[0031] Example 6 is based on Example 3. In step S1 of Example 6, the molar ratio between 3-butylcyclopentadienylyttrium, tris(cyclopentadienyl)cerium and tris(cyclopentadienyl)lanthanum is 1:0.15:0.5. Example 7

[0032] Example 7 is based on Example 3. In step S1 of Example 7, the molar ratio between 3-butylcyclopentadienylyttrium, tris(cyclopentadienyl)cerium and tris(cyclopentadienyl)lanthanum is 1:0.15:0.85. Example 8

[0033] Example 8 is based on Example 3. In step S1 of Example 8, the thickness of the yttrium-containing composite coating is 250 nm. Example 9

[0034] Example 9 is based on Example 3. In step S1 of Example 9, the thickness of the yttrium-containing composite coating is 350 nm. Example 10

[0035] Example 10 is based on Example 3. In step S1 of Example 10, the ratio of yttrium-containing composite coating O to Y is 1.15:1. Example 11

[0036] Example 11 is based on Example 3. In step S1 of Example 11, the ratio of O to Y in the yttrium composite coating is 1.45:1. Example 12

[0037] Example 12 is based on Example 3. In Example 12, the plasma power is 1000W during the plasma bombardment process in step S2. Example 13

[0038] Example 13 is based on Example 3. In Example 13, the plasma power is 1400W during the plasma bombardment process in step S2. Example 14

[0039] Example 14 is based on Example 3. In Example 14, the bias voltage is 700V during the plasma bombardment process in step S2. Example 15

[0040] Example 15 is based on Example 3. In Example 15, the bias voltage is 900V during the plasma bombardment process in step S2.

[0041] Comparative Example 1 Comparative Example 1 is based on Example 3. In step S1, no tris(cyclopentadienyl)cerium was added to Comparative Example 1.

[0042] Comparative Example 2 Comparative Example 2 is based on Example 1, but in step S1, no tris(cyclopentadienyl)lanthanum was added.

[0043] Comparative Example 3 Comparative Example 3 is based on Example 1. In step S1 of Comparative Example 3, the precursor is only 3-butylcyclopentadiene yttrium.

[0044] Performance testing The following performance tests were performed on the samples of Examples 1-15 and Comparative Examples 1-3: (1) Resistance to fluorine plasma corrosion Using GB / T 26538-2011 as the testing reference, the corrosion resistance of the samples was tested. The NF3 / Ar volume ratio was 12:88, the power was 1200W, the bias voltage was 800V, the temperature was 180℃, and the continuous corrosion was carried out for 2000h. The coating thickness before and after corrosion was measured, and the thickness loss rate was calculated. Each sample was tested 3 times, and the average value was taken. The test results were filled in Table 1. (2) Coating adhesion Using GB / T 5270-2005 as the testing reference, the coating adhesion of the samples was tested. Each sample was tested 3 times, and the average value was taken. The test results were recorded in Table 1.

[0045] (3) Thermal cycling stability test Using GB / T 2423.22-2012 as the testing reference, the thermal cycling stability of the samples was tested. Each sample was tested 3 times, and the average value was taken. The test results were recorded in Table 1.

[0046] Table 1 Performance test results of Examples 1-15 and Comparative Examples 1-3

[0047] As shown in Table 1, the coating loss rate of Examples 1-3 is 5% or less, indicating that the coating prepared in this application has good corrosion resistance. The coating adhesion of Examples 1-3 is 22N or more, indicating that the coating prepared in this application has good interfacial bonding performance. The thickness change rate of Examples 1-3 after 50 thermal cycles is 1.5% or less, indicating that the coating prepared in this application has good heat resistance.

[0048] In Examples 4 and 5, the molar ratio between 3-butylcyclopentadienyl yttrium and tris(cyclopentadienyl)cerium in step S1 is outside the range defined in this application. When the molar mass of tris(cyclopentadienyl)cerium is too low, the Ce in the yttrium-containing composite coating... 3+ Ce 4+ Insufficient density of valence centers leads to a decrease in the dynamic repair capacity of oxygen vacancies during plasma corrosion. Active fluoride ions diffuse along the unrepaired vacancies, thus accelerating corrosion. Furthermore, the lack of cerium reduces the lattice stability of the coating, affecting overall performance. When the molar mass of tri(cyclopentadienyl)cerium is too high, excessive cerium can induce lattice distortion. During thermal cycling, stress release leads to crack formation, which damages the density of the coating and reduces the overall performance of the coating.

[0049] In Example 6 and Example 7, the molar ratio between 3-butylcyclopentadienyl yttrium and tris(cyclopentadienyl)lanthanum in step S1 is not within the range specified in this application. When the molar mass of tris(cyclopentadienyl)lanthanum is too low, the lanthanum content decreases, making it difficult to further buffer stress, thus making it difficult for the coating to be effectively released. Under thermal shock, interfacial peeling occurs, and the stable phase of LaF3 is insufficiently generated, resulting in a decrease in corrosion resistance.

[0050] In Examples 8 and 9, the thickness of the yttrium-containing composite coating prepared in step S1 is not within the range specified in this application. When the thickness of the yttrium-containing composite coating is insufficient, the fluorination gradient layer is destroyed and further penetrates after long-term plasma corrosion, resulting in a decrease in the corrosion resistance of the system. When the thickness of the yttrium-containing composite coating is too large, excessive internal stress will accumulate in the coating, thereby reducing the bonding performance of the coating. After being heated, the coating will crack.

[0051] In Examples 10 and 11, the ratio of O to Y is not within the range defined in this application. When the O / Y ratio is too low, the oxygen vacancy concentration in the system will be too high. Although this will facilitate the subsequent penetration of fluorine, it will damage the overall structural integrity of the initial yttrium-containing coating and reduce the mechanical strength of the coating. When the O / Y ratio is too high, there will be insufficient oxygen vacancy, which will limit the diffusion of fluoride ions into the interior of the coating. This will cause the fluorine to remain only on the surface and make it difficult to form an effective gradient fluorination layer, resulting in a decrease in performance.

[0052] In Examples 12 and 13, the power of plasma bombardment in step S2 is not within the range specified in this application. When the power of plasma bombardment is too low, the dissociation of NF3 is insufficient, the fluorination reaction rate is slow and incomplete, and it is difficult to form a dense fluorinated coating of sufficient thickness, resulting in a decrease in various properties. When the power of plasma bombardment is too high, the surface of the coating is excessively etched, causing damage and destroying the overall integrity of the coating.

[0053] In Examples 14 and 15, the bias voltage during plasma bombardment in step S2 is not within the range defined in this application. When the bias voltage is insufficient, the implantation kinetic energy of fluoride ions is insufficient, making it difficult to penetrate into the coating. The fluorinated layer is shallow and cannot provide good protection. When the bias voltage is too high, the energy of plasma bombardment is too great, resulting in excessive defects at the interface between the coating and the substrate, thereby affecting the bonding strength between the coating and the substrate.

[0054] In Comparative Example 1, the absence of tri(cyclopentadienyl)cerium made it difficult to further control the coating to achieve a uniform distribution of oxygen vacancies, resulting in the accumulation of oxygen vacancies and a decrease in the corrosion resistance of the system.

[0055] In Comparative Example 2, the absence of tri(cyclopentadienyl)lanthanum caused plasma distortion, leading to localized corrosion and decreased adhesion between the coating and the substrate, resulting in peeling.

[0056] In Comparative Example 3, the precursor was only 3-butylcyclopentadienyl yttrium. After fluorination, the single Y2O3 coating lacked the synergistic effect of oxygen vacancy regulation and thermal stability, resulting in a loose coating structure and a severe decline in coating performance.

[0057] This specific embodiment is merely an explanation of this application and is not intended to limit it. Based on the above description, those skilled in the art can make various changes and modifications without departing from the technical concept of this application. The technical scope of this application is not limited to the contents of the specification but must be determined according to the scope of the claims.

Claims

1. A process for coating the surface of a semiconductor device component, characterized by: Includes the following steps: S1. Yttrium-containing composite coating deposition: The part is placed into the ALD deposition equipment, and the precursor is introduced to perform coating deposition to obtain the part with a yttrium-containing composite coating. S2. Plasma bombardment: Parts with yttrium-containing composite coatings are subjected to plasma bombardment in a plasma device to form a composite gradient fluorinated coating on the surface of the parts, ultimately yielding the product.

2. The surface coating process for a semiconductor device component according to claim 1, characterized in that: In step S1, the precursor includes 3-butylcyclopentadiene yttrium.

3. The surface coating process for a semiconductor device component according to claim 1, characterized in that: The thickness of the yttrium-containing composite coating is 290-310 nm, and the ratio of O to Y in the yttrium-containing composite coating is (1.25-1.35):

1.

4. The surface coating process for a semiconductor device component according to claim 1, characterized in that: During the plasma bombardment process, the plasma gas includes argon and fluorine-containing gas, and the fluorine-containing gas includes nitrogen trifluoride and sulfur hexafluoride.

5. The surface coating process for a semiconductor device component according to claim 2, characterized in that: Tris(cyclopentadienyl)cerium was also added during the deposition of the yttrium-containing composite coating.

6. The surface coating process for a semiconductor device component according to claim 5, characterized in that: The molar ratio between tri(cyclopentadienyl)cerium and 3-butylcyclopentadienylyttrium is (0.13-0.17):

1.

7. The surface coating process for a semiconductor device component according to claim 5, characterized in that: During the deposition of the yttrium-containing composite coating, tris(cyclopentadienyl)lanthanum was also added.

8. The surface coating process for a semiconductor device component according to claim 7, characterized in that: The molar ratio between the tri(cyclopentadienyl)lanthanum and 3-butylcyclopentadienylyttrium is (0.62-0.72):

1.

9. The surface coating process for a semiconductor device component according to claim 1, characterized in that: In step S2, during the plasma bombardment process, the plasma power is 1100-1300W and the bias voltage is 750-850V.

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