Electrical defect detection structure and electrical defect detection method

Abstract

The embodiment of the invention provides an electrical defect detection structure. The electrical defect detection structure comprises a first conductive wire layer, a conductive column layer and a second conductive wire layer which are sequentially stacked along a first direction, the first conductive wire layer comprises a first conductive wire and a second conductive wire which are alternately arranged along a second direction, one of the first conductive wire and the second conductive wire is grounded, and the other one is connected with a suspended device; the second conductive wire layer comprises a third conductive wire and a fourth conductive wire which are alternately arranged along a third direction; the conductive column layer comprises a plurality of conductive columns; the third conductive wire comprises a plurality of first parts arranged in the second direction, each first part is correspondingly connected with one conductive column, and every two adjacent first parts in the second direction are electrically isolated from each other; and / or the fourth conductive wire comprises a plurality of second parts arranged in the second direction, each second part is correspondingly connected with one conductive column, and every two adjacent second parts in the second direction are electrically isolated from each other.

Description

Technical Field

[0001] This disclosure relates to, but is not limited to, a detection structure and a method for detecting electrical defects. Background Technology

[0002] With the increasing maturity of semiconductor technology, very large-scale integrated circuits (VLSI) are developing rapidly. Integrated circuits with better performance and stronger functions require greater component density, and the spacing between components is also shrinking. However, with the reduction in component density and spacing, electrical defects are more likely to occur, affecting performance. Therefore, the detection of electrical defects is extremely important.

[0003] Public content

[0004] According to a first aspect of the present disclosure, a detection structure for electrical defects is provided, comprising: a first conductive line layer, a conductive pillar layer, and a second conductive line layer sequentially stacked along a first direction;

[0005] The first conductive wire layer includes a first conductive wire and a second conductive wire arranged alternately along a second direction, wherein one of the first conductive wire and the second conductive wire is grounded and the other is connected to a floating device; the second conductive wire layer includes a third conductive wire and a fourth conductive wire arranged alternately along a third direction; the second direction intersects the third direction and is perpendicular to the first direction;

[0006] The conductive pillar layer includes a plurality of conductive pillars arranged in an array along the second direction and the third direction; one end of the conductive pillar at opposite ends along the first direction is connected to a conductive line in the first conductive line layer, and the other end is connected to a conductive line in the second conductive line layer.

[0007] The third conductive wire includes a plurality of first portions arranged along the second direction, each first portion being connected to a corresponding conductive post, and two adjacent first portions along the second direction being electrically isolated from each other; and / or, the fourth conductive wire includes a plurality of second portions arranged along the second direction, each second portion being connected to a corresponding conductive post, and two adjacent second portions along the second direction being electrically isolated from each other.

[0008] In some alternative embodiments, the first conductive line includes a plurality of third portions arranged along the third direction, each third portion being connected to a corresponding conductive post, and adjacent third portions being electrically isolated from each other along the third direction; and / or, the second conductive line includes a plurality of fourth portions arranged along the third direction, each fourth portion being connected to a corresponding conductive post, and adjacent fourth portions being electrically isolated from each other along the third direction.

[0009] In some alternative embodiments, both the first conductive line and the second conductive line extend continuously along the third direction.

[0010] According to a second aspect of the present disclosure, another electrical defect detection structure is provided, comprising: a first conductive line layer, a conductive pillar layer, and a second conductive line layer sequentially stacked along a first direction;

[0011] The first conductive line layer includes first conductive lines and second conductive lines arranged alternately along a second direction; the second direction is perpendicular to the first direction.

[0012] The conductive pillar layer includes a plurality of conductive pillars arranged in an array along the second direction and the third direction; one end of each conductive pillar along the first direction is connected to a conductive line in the first conductive line layer, and the other end is connected to a conductive line in the second conductive line layer; the third direction intersects the second direction and is perpendicular to the first direction;

[0013] The first conductive line includes a plurality of third portions arranged along the third direction, with adjacent third portions electrically isolated from each other along the third direction; the second conductive line includes a plurality of fourth portions arranged along the third direction, with adjacent fourth portions electrically isolated from each other along the third direction; each conductive post is connected to one of the third portions or one of the fourth portions; the plurality of third portions and the plurality of fourth portions constitute a first group and a second group arranged alternately along the third direction, and both the first group and the second group include a plurality of third portions and fourth portions arranged along the second direction; one of the first group and the second group is grounded, and the other is connected to a floating device.

[0014] In some alternative embodiments, the second conductive layer includes third and fourth conductive lines arranged alternately along the third direction.

[0015] In some alternative embodiments, the third conductive wire includes a plurality of first portions arranged along the second direction, each first portion being connected to a corresponding conductive post, and two adjacent first portions along the second direction being electrically isolated from each other; and / or, the fourth conductive wire includes a plurality of second portions arranged along the second direction, each second portion being connected to a corresponding conductive post, and two adjacent second portions along the second direction being electrically isolated from each other.

[0016] In some alternative embodiments, both the third conductive line and the fourth conductive line extend continuously along the second direction.

[0017] According to a third aspect of the present disclosure, a method for detecting electrical defects is provided, comprising:

[0018] Provide a detection structure for electrical defects as described in any of the embodiments above;

[0019] The detection structure is inspected using an electron beam inspection device to determine whether it has electrical defects.

[0020] In some optional embodiments, the step of using an electron beam detection device to detect the detection structure to determine whether the detection structure has electrical defects includes:

[0021] The detection structure is inspected using the electron beam defect detection equipment to obtain a voltage contrast image.

[0022] Based on the difference between the bright / dark distribution in the voltage contrast image and the bright / dark distribution in the preset image, it is determined that the detection structure has an electrical defect;

[0023] Based on the fact that the bright / dark distribution in the voltage contrast image is the same as the bright / dark distribution in the preset image, it is determined that the detection structure has no electrical defects.

[0024] In some optional implementations, the method further includes:

[0025] The bright / dark distribution in the voltage contrast image is compared with the bright / dark distribution in a preset image to locate the position of the electrical defect.

[0026] In this embodiment, the third conductive line includes a plurality of first portions arranged along a second direction, each first portion being connected to a corresponding conductive post, and two adjacent first portions along the second direction being electrically isolated from each other; and / or, the fourth conductive line includes a plurality of second portions arranged along the second direction, each second portion being connected to a corresponding conductive post, two adjacent second portions along the second direction being electrically isolated from each other, and one of the first conductive line and the second conductive line is grounded, while the other is connected to a floating device. In this embodiment, on the one hand, by specially designing the detection structure for electrical defects, electrical defects can be detected immediately after the detection structure is formed using an electron beam detection device, and real-time defect analysis can be performed online, thereby improving the timeliness of electrical defect detection and preventing the generation of large quantities of defective products; on the other hand, the electron beam detection device can detect electrical defects of smaller dimensions; furthermore, the location of electrical defects and the type of electrical defects can be located based on the online detection results of the electron beam detection device, providing an effective detection method for early process development and finding process windows. Attached Figure Description

[0027] Figure 1This is a schematic diagram of a structure for detecting electrical defects according to an embodiment of the present disclosure.

[0028] Figure 2 This is a schematic diagram of the architecture of the electrical defect detection structure provided in an embodiment of the present disclosure.

[0029] Figures 3 to 27 This is a schematic diagram of a structure for detecting electrical defects provided in other embodiments of this disclosure.

[0030] Figures 28 to 37 This is a schematic diagram of the bright / dark distribution of an electrical defect detection structure provided in some embodiments of this disclosure. Detailed Implementation

[0031] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0032] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0033] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0034] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0035] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0036] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0037] To gain a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for reference and illustration only and are not intended to limit the embodiments of this disclosure.

[0038] With the increasing maturity of semiconductor technology, very large-scale integrated circuits (VLSI) are developing rapidly. Integrated circuits with better performance and stronger functions require greater component density, and the spacing between components is also shrinking. However, with the reduction in component density and spacing, electrical defects are more likely to occur, affecting performance. Therefore, the detection of electrical defects is extremely important.

[0039] Figure 1 This disclosure provides a detection structure for electrical defects according to an embodiment. For example... Figure 1 As shown, the electrical defect detection structure includes a lower conductive wire layer, an upper conductive wire layer, and a conductive pillar layer located between the upper and lower conductive wire layers. The lower conductive wire layer includes multiple lower conductive wires arranged along the X-direction and extending along the Y-axis. The upper conductive wire layer includes multiple upper conductive wires arranged along the Y-direction and extending along the X-axis. The conductive pillar layer includes multiple conductive pillars arranged in an array along the X-axis and Y-axis directions. Figure 1 In the electrical defect detection structure shown, if a short circuit defect (metal bridging defect) occurs in the upper or lower conductive layer, it cannot be detected by online defect monitoring (Inline Defect Monitor). Instead, it can only be detected by slicing analysis after electrical measurement, which affects the timeliness of defect detection.

[0040] In other embodiments, the product can be directly inspected using a bright-field optical inspection machine. However, this method is difficult to detect short-circuit defects of smaller size and has limited application in advanced processes. Furthermore, designing a specific structure and using electrical measurement to detect open / short circuits after the upper and lower metal layers / vias are completed requires additional photomasks / processes to be carried out at specific sites, which affects the timeliness of defect detection and makes it more difficult to locate the defects.

[0041] The present disclosure provides the following implementation methods.

[0042] This disclosure provides a detection structure for electrical defects, such as... Figure 2 As shown, the electrical defect detection structure includes: a first conductive wire layer 101, a conductive pillar layer 103, and a second conductive wire layer 102 stacked sequentially along a first direction; wherein, as... Figures 3 to 22As shown, the first conductive layer 101 includes a first conductive line 104 and a second conductive line 105 arranged alternately along a second direction. One of the first conductive line 104 and the second conductive line 105 is grounded, and the other of the first conductive line 104 and the second conductive line 105 is connected to a floating device. The second conductive layer 102 includes a third conductive line 106 and a fourth conductive line 107 arranged alternately along a third direction. The second direction intersects the third direction and is perpendicular to the first direction.

[0043] The conductive pillar layer 103 includes a plurality of conductive pillars 108 arranged in an array along the second direction and the third direction; one end of the conductive pillar 108 is connected to a conductive line in the first conductive line layer 101 at its opposite ends along the first direction, and the other end is connected to a conductive line in the second conductive line layer 102.

[0044] The third conductive wire 106 includes a plurality of first portions 109 arranged along the second direction, each first portion 109 being connected to a corresponding conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other; and / or, the fourth conductive wire 107 includes a plurality of second portions 110 arranged along the second direction, each second portion 110 being connected to a corresponding conductive post 108, and two adjacent second portions 110 along the second direction being electrically isolated from each other.

[0045] In some specific examples, the materials of the first conductive line 104, the second conductive line 105, the third conductive line 106, the fourth conductive line 107, and the conductive post 108 all include conductive materials. The conductive materials include, but are not limited to, doped semiconductor materials (e.g., doped silicon, doped germanium, etc.), conductive metal nitrides (e.g., titanium nitride, tantalum nitride, etc.), metallic materials (e.g., aluminum, copper, tungsten, titanium, tantalum, etc.), and metal semiconductor compounds (e.g., tungsten silicide, cobalt silicide, titanium silicide, etc.).

[0046] In some specific examples, the first conductive wire 104 and the second conductive wire 105 are made of the same material; the third conductive wire 106 and the fourth conductive wire 107 are made of the same material; the first conductive wire 104 and the third conductive wire 106 may be made of the same material or different materials.

[0047] In this embodiment, the grounding method includes, but is not limited to, the following: 1. The corresponding conductive line is directly connected to the ground terminal; 2. The corresponding conductive line is connected to the ground terminal through an NMOS transistor; 3. The corresponding conductive line is connected to the ground terminal through a conductive structure other than the detection structure. The corresponding conductive line connecting to a floating device includes, but is not limited to, the following: 1. The corresponding conductive line is connected to a PMOS transistor; 2. The corresponding conductive line is connected to an insulating structure.

[0048] In this embodiment of the present disclosure, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, each first portion 109 being connected to a conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other; and / or, the fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, each second portion 110 being connected to a conductive post 108, two adjacent second portions 110 along the second direction being electrically isolated from each other, and one of the first conductive line 104 and the second conductive line 105 is grounded, and the other is connected to a floating device. In this embodiment, on the one hand, by specially designing the detection structure for electrical defects, electrical defect detection can be performed immediately after the detection structure is formed using an electron beam inspection device, enabling real-time online defect analysis. This improves the timeliness of electrical defect detection and prevents the generation of large quantities of defective products. On the other hand, the electron beam inspection device can detect electrical defects of smaller sizes. Furthermore, the location of electrical defects and the type of electrical defects can be determined based on the online detection results of the electron beam inspection device, providing an effective detection method for early-stage process development and finding process windows.

[0049] Figures 3 to 22 Taking the example of the first conductive line 104 being grounded and the second conductive line 105 being connected to a floating device, this is used as an example. However, in this embodiment, the second conductive line 105 can also be grounded, and the first conductive line 104 can be connected to a floating device. The following will use the example of the first conductive line 104 being grounded and the second conductive line 105 being connected to a floating device in conjunction with... Figures 3 to 22 Further explanation is needed.

[0050] It should be noted that, Figure 3 for Figure 4 A top-view structural diagram; Figure 5 for Figure 6 A top-view structural diagram; Figure 7 for Figure 8 A top-view structural diagram; Figure 9 for Figure 10 A top-view structural diagram; Figure 11 for Figure 12 A top-view structural diagram; Figure 13 for Figure 14 A top-view structural diagram; Figure 15 for Figure 16 A top-view structural diagram; Figure 17 for Figure 18 A top-view structural diagram; Figure 19 for Figure 20 A top-view structural diagram; Figure 21 for Figure 22 A top-view structural diagram.

[0051] In this embodiment of the disclosure, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, each first portion 109 being connected to a conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other; and / or, the fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, each second portion 110 being connected to a conductive post 108, and two adjacent second portions 110 along the second direction being electrically isolated from each other, including various cases: 1. such as Figures 3 to 8 As shown, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, two adjacent first portions 109 along the second direction are electrically isolated from each other, and the fourth conductive line 107 extends along the second direction; II. As Figures 9 to 14 As shown, the fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, with adjacent second portions 110 electrically isolated from each other along the second direction, and the third conductive line 106 extending along the second direction; III. As Figures 15 to 22 As shown, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, and two adjacent first portions 109 along the second direction are electrically isolated from each other. The fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, and two adjacent second portions 110 along the second direction are electrically isolated from each other.

[0052] In this embodiment of the disclosure, the first conductive line 104 and / or the second conductive line 105 are cut into multiple parts, thereby electrically isolating two adjacent parts along the second direction.

[0053] It should be noted that the number of the first conductive line 104, the second conductive line 105, the third conductive line 106, and the fourth conductive line 107 in this embodiment is merely an example and is not intended to limit the number of the first conductive line 104, the second conductive line 105, the third conductive line 106, and the fourth conductive line 107 in this embodiment.

[0054] In the above embodiments, the conductive lines in the first conductive line layer 101 may include various cases. The conductive lines in the first conductive line layer 101 in the above embodiments will be further described below.

[0055] In some embodiments, the first conductive line 104 includes a plurality of third portions 111 arranged along a third direction, each third portion 111 being connected to a conductive post 108, and adjacent third portions 111 being electrically isolated from each other along the third direction; and / or, the second conductive line 105 includes a plurality of fourth portions 112 arranged along a third direction, each fourth portion 112 being connected to a conductive post 108, and adjacent fourth portions 112 being electrically isolated from each other along the third direction.

[0056] In this embodiment of the present disclosure, the conductive lines in the first conductive line layer 101 can be as follows: Figure 6 , Figure 12 , Figure 16 As shown, the first conductive line 104 includes a plurality of third portions 111 arranged along a third direction, each third portion 111 being connected to a corresponding conductive post 108, and adjacent third portions 111 being electrically isolated from each other along the third direction; the second conductive line 105 extends along the third direction; secondly, the conductive lines in the first conductive line layer 101 can also be as follows Figure 18 As shown, the second conductive line 105 includes a plurality of fourth portions 112 arranged along the third direction, each fourth portion 112 being connected to a corresponding conductive post 108, and two adjacent fourth portions 112 being electrically isolated from each other along the third direction; the first conductive line 104 extends along the third direction; third, the conductive lines in the first conductive line layer 101 can also be as follows Figure 4 , Figure 10 , Figure 20 As shown, the first conductive line 104 includes a plurality of third portions 111 arranged along a third direction, each third portion 111 being connected to a conductive post 108, and two adjacent third portions 111 being electrically isolated from each other along the third direction. The second conductive line 105 includes a plurality of fourth portions 112 arranged along a third direction, each fourth portion 112 being connected to a conductive post 108, and two adjacent fourth portions 112 being electrically isolated from each other along the third direction.

[0057] In some embodiments, the conductive lines in the first conductive line layer 101 may also be as follows: Figure 8 , Figure 14 , Figure 22 As shown, both the first conductive line 104 and the second conductive line 105 extend continuously along the third direction.

[0058] Based on a concept similar to the aforementioned electrical defect detection structure, this disclosure also provides an electrical defect detection structure, such as... Figures 23 to 27As shown, it includes: a first conductive wire layer 101, a conductive pillar layer 103, and a second conductive wire layer 102 stacked sequentially along a first direction; wherein, the first conductive wire layer 101 includes first conductive wires 104 and second conductive wires 105 alternately arranged along a second direction; the second direction is perpendicular to the first direction; the conductive pillar layer 103 includes a plurality of conductive pillars 108 arranged in an array along the second direction and a third direction; one end of one of the two opposite ends of the conductive pillar 108 along the first direction is connected to a conductive wire in the first conductive wire layer 101, and the other end is connected to a conductive wire in the second conductive wire layer 102; the third direction intersects the second direction and is perpendicular to the first direction; the first conductive wire 104 includes a plurality of third parts 1 arranged along the third direction. 11. Two adjacent third portions 111 along a third direction are electrically isolated from each other; the second conductive line 105 includes a plurality of fourth portions 112 arranged along a third direction, and two adjacent fourth portions 112 along a third direction are electrically isolated from each other; each conductive post 108 is connected to a third portion 111 or a fourth portion 112; the plurality of third portions 111 and the plurality of fourth portions 112 constitute a first group 113 and a second group 114 arranged alternately along a third direction, and both the first group 113 and the second group 114 include a plurality of third portions 111 and fourth portions 112 arranged along a second direction; one of the first group 113 and the second group 114 is grounded, and the other of the first group 113 and the second group 114 is connected to a floating device.

[0059] In this embodiment, the first conductive line 104 includes a plurality of third portions 111 arranged along a third direction, with adjacent third portions 111 electrically isolated from each other. The second conductive line 105 includes a plurality of fourth portions 112 arranged along a third direction, with adjacent fourth portions 112 electrically isolated from each other. One of the first group 113 and the second group 114 is grounded, and the other of the first group 113 and the second group 114 is connected to a suspended device. That is, in this embodiment, both the first and second conductive lines are cut off, the first group is grounded, and the second group is connected to a suspended device. This allows for immediate electrical defect detection using an electron beam detection device after the detection structure is formed, enabling real-time online defect analysis. This improves the timeliness of electrical defect detection, thereby preventing the generation of large quantities of defective products. Furthermore, the location of electrical defects can be located based on the online detection results of the electron beam detection device.

[0060] It should be noted that, Figure 23 for Figure 24 , Figure 25 , Figure 26 and Figure 27 The diagram shows a top view of the structure, and to more clearly illustrate the structure in the first conductive layer 101, Figure 23 The structure of the conductive pillar layer and the first conductive wire layer is omitted.

[0061] In some embodiments, such as Figures 24 to 27 As shown, the second conductive layer 102 includes a third conductive line 106 and a fourth conductive line 107 arranged alternately along a third direction.

[0062] In the above embodiments, the conductive lines in the second conductive line layer 102 can include various cases, which will be discussed below. Figures 24 to 27 The conductive lines in the second conductive line layer 102 will be further explained.

[0063] In some embodiments, the third conductive line 106 includes a plurality of first portions 109 arranged along a second direction, each first portion 109 being connected to a conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other; and / or, the fourth conductive line 107 includes a plurality of second portions 110 arranged along a second direction, each second portion 110 being connected to a conductive post 108, and two adjacent second portions 110 along the second direction being electrically isolated from each other.

[0064] In the above embodiments, the conductive lines in the first and second conductive line layers 102 can be as follows: Figure 24 As shown, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, each first portion 109 being connected to a corresponding conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other; the fourth conductive line 107 extends along the second direction; secondly, the conductive lines in the second conductive line layer 102 can also be as follows. Figure 25 As shown, the fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, each second portion 110 being connected to a corresponding conductive post 108, and two adjacent second portions 110 along the second direction being electrically isolated from each other; the third conductive line 106 extends along the second direction; third, the conductive lines in the second conductive line layer 102 can also be as follows Figure 26 As shown, the third conductive line 106 includes a plurality of first portions 109 arranged along the second direction, each first portion 109 being connected to a corresponding conductive post 108, and two adjacent first portions 109 along the second direction being electrically isolated from each other. The fourth conductive line 107 includes a plurality of second portions 110 arranged along the second direction, each second portion 110 being connected to a corresponding conductive post 108, and two adjacent second portions 110 along the second direction being electrically isolated from each other.

[0065] In some embodiments, the conductive lines in the second conductive line layer 102 may also be as follows: Figure 27 As shown, both the third conductive line 106 and the fourth conductive line 107 extend continuously along the second direction.

[0066] The test structure in this embodiment can be located in the dicing channel, specifically in the test key (TSK) area within the dicing channel. Multiple electrical defect detection structures can be set in the dicing channel, and these multiple electrical defect detection structures can be the same or different. That is, the dicing channel in this embodiment can include one or more of the electrical defect detection structures mentioned in the above embodiments. By setting multiple different electrical defect detection structures in the dicing channel, this embodiment can perform more comprehensive detection of electrical defects. The chip in this disclosure can include dicing channels and a memory area. By performing corresponding detection on the electrical defect detection structures in the dicing channel, the characteristics of similar structures in the memory area can be characterized.

[0067] This disclosure also provides a method for detecting electrical defects, including:

[0068] Provide a detection structure for electrical defects as described in any of the above embodiments;

[0069] The structure is inspected using an electron beam inspection device to determine whether it has electrical defects.

[0070] Electron-beam inspection (EBI) equipment uses electron beam inspection technology to perform high-resolution imaging of the surface of the inspected structure. Through intelligent algorithms, it detects electrical and physical defects on silicon wafers, making it a key piece of equipment for improving yield in chip manufacturing. It is increasingly being used in advanced IC chip manufacturing. EBI equipment has a high enough resolution to detect minute physical defects that optical defect imaging systems cannot handle, thus enabling the detection of electrical defects. When performing electrical defect detection, EBI equipment detects changes in voltage contrast caused by variations in grayscale due to electrical charge, and displays these changes as dark and bright fields in the output voltage contrast image.

[0071] In this embodiment of the disclosure, by specially designing the detection structure, electrical defects can be detected immediately after the detection structure is formed using an electron beam detection device, and real-time defect analysis can be performed online. This improves the timeliness of electrical defect detection and thus prevents the generation of a large number of defective products.

[0072] In some embodiments, an electron beam inspection device is used to inspect the inspection structure to determine whether the inspection structure has electrical defects, including:

[0073] The structure was inspected using an electron beam defect detection device to obtain voltage contrast images;

[0074] The bright / dark distribution in the voltage contrast image is compared with the bright / dark distribution in the preset image to determine whether the detected structure has electrical defects.

[0075] In some embodiments, electrical defects include short-circuit defects between adjacent first conductive lines 104 and second conductive lines 105, short-circuit defects between adjacent conductive posts 108, short-circuit defects between adjacent third conductive lines 106 and fourth conductive lines 107, and open-circuit defects between conductive posts 108 and conductive lines connected to them. These short-circuit defects may also be referred to as metal bridging defects.

[0076] In electron beam defect detection equipment, a low-energy electron beam is used as the incident source. When the electron beam strikes the surface of the structure being inspected, it excites secondary electrons, back-emitter electrons, and penetrating electrons. The collected image is then processed by an image processing system and presented as a voltage contrast image. In the voltage contrast image, areas with a higher amount of secondary electrons show a bright field, while areas with a lower amount of secondary electrons show a dark field. Therefore, the distribution of bright and dark areas can be used as a basis for defect detection.

[0077] If one or a portion of a conductive line in the first conductive layer 101 is grounded, when the electron beam defect detection device emits an electron beam onto the corresponding conductive line in the second conductive layer 102, the charge and secondary electrons on the corresponding conductive line in the second conductive layer 102 are conducted away, thus presenting a dark field at the corresponding position in the preset image. If one or a portion of a conductive line in the first conductive layer 101 is connected to a suspended device, when the electron beam defect detection device emits an electron beam onto the corresponding conductive line in the second conductive layer 102, the charge and secondary electrons on the corresponding conductive line in the second conductive layer 102 accumulate on the corresponding conductive line in the second conductive layer 102, thus presenting a bright field at the corresponding position in the preset image.

[0078] In this embodiment, the preset image can be a standard image inferred based on the specific structural features of the detection structure. Alternatively, it can be a voltage contrast image corresponding to the same position in chips adjacent to the chip to which the detection structure belongs, among multiple chips (dies) belonging to the same wafer as the detection structure. This embodiment does not limit the comparison.

[0079] In some embodiments, comparing the bright / dark distribution in a voltage contrast image with the bright / dark distribution in a preset image to determine whether the detected structure has an electrical defect includes:

[0080] Based on the difference between the bright / dark distribution in the voltage contrast image and the bright / dark distribution in the preset image, it is determined that the detected structure has an electrical defect;

[0081] Based on the fact that the bright / dark distribution in the voltage contrast image is the same as the bright / dark distribution in the preset image, it is determined that the detected structure has no electrical defects.

[0082] In some embodiments, the method further includes:

[0083] The bright / dark distribution in the voltage contrast image is compared with the bright / dark distribution in the preset image to locate the position of electrical defects.

[0084] In this embodiment of the present disclosure, the voltage contrast image of the detected structure detected by the electron beam defect detection device is compared with a preset image. The comparison result can be used to determine whether the detected structure has electrical defects and to locate the position of the electrical defects.

[0085] The following will combine Figures 28 to 37 Further explanation is provided on how to determine whether the detected structure has electrical defects and how to locate the position of electrical defects based on the comparison results of the bright / dark distribution in the voltage contrast image and the bright / dark distribution in the preset image.

[0086] Figure 28 for Figure 20 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 28 ① is the preset image. Figure 28 Image ② shows the voltage contrast image of the detected structure. (Example:) Figure 28 As shown in Figure ①, the first conductive line 104 is grounded, and the second conductive line 105 is connected to the floating device. The charge and secondary electrons in a portion of the second conductive line layer 102 connected to the first conductive line 104 are conducted away, so the portion of the second conductive line layer 102 connected to the first conductive line 104 exhibits a dark field. Meanwhile, the charge and secondary electrons in a portion of the second conductive line layer 102 connected to the second conductive line 105 are concentrated in the portion of the conductive line connected to the second conductive line 105, so the portion of the second conductive line layer 102 connected to the second conductive line 105 exhibits a bright field.

[0087] like Figure 28 As shown in Figure ②, when a short circuit occurs between a and b, or between c and d, or between e and f, the brightness at point e and point f will change, with point e becoming brighter than point f. Figure 28 In ①, point e is darker, while point f is darker compared to... Figure 28The area at point f shown in ① is brighter. Therefore, the voltage contrast image of the detected structure detected by the electron beam defect detection equipment can be compared with a preset image to determine whether there is an electrical defect and to locate the position of the electrical defect.

[0088] Figure 29 for Figure 16 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 29 ① is the preset image. Figure 29 Image ② shows the voltage contrast image of the detected structure. (Compared to...) Figure 28 Similar to what is shown, and Figure 28 The difference is that the second conductive line 105 extends in a third direction. When a short circuit occurs between a and b, or between c and d, or between e and f, in addition to the difference in the brightness / darkness distribution at e and f compared to the preset image, the brightness / darkness distribution at g and h also differs from the preset image. The brightness / darkness distribution at g and h is different compared to the preset image. Figure 29 The corresponding positions in ① are all darker.

[0089] Figure 30 for Figure 22 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 30 ① is the preset image. Figure 30 Image ② shows the voltage contrast image of the detected structure. (Compared to...) Figure 29 Similar to what is shown, and Figure 29 The difference is that the first conductive line 104 also extends in a third direction. When a short circuit occurs between a and b, or between c and d, or between e and f, in addition to the difference in the brightness / darkness distribution at e, f, g, and h compared to the preset image, the brightness / darkness distribution at i and j also differs from the preset image. The brightness / darkness distribution at i and j is different compared to the preset image. Figure 30 The corresponding positions in ① are all brighter.

[0090] Figure 31 for Figure 4 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 31 ① is the preset image. Figure 31 Images ② and ③ are voltage contrast images of the detected structure. Figure 28 Similar to what is shown, and Figure 28 The difference is that the fourth conductive line 107 extends along the second direction. Figure 31 In ①, the fourth conductive line 107 is brighter in the dark field than the portion of the third conductive line 106 that is in the bright field, and the fourth conductive line 107 is darker in the bright field than the portion of the third conductive line 106 that is in the bright field. For example... Figure 31 As shown in ②, when a short circuit occurs between a and b, or between c and d, or between e and f, Figure 31 Compared to point e in ② Figure 31The area at point e in ① is darker. Figure 31 Compared to ②, the f position in ② Figure 31 The area at f in ① is brighter. For example... Figure 31 As shown in ③, when a short circuit occurs between k and f, Figure 31 Compared to ③, the f position is... Figure 31 The area at point f in section ① is brighter. Figure 31 Compared to point k in ③ Figure 31 The area at k in ① is darker.

[0091] Figure 32 for Figure 6 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 32 ① is the preset image. Figure 32 Images ② and ③ in the diagram are voltage contrast images of the detected structure. Figure 32 and Figure 31 Similar to what is shown, and Figure 31 The difference is that the second conductive wire 105 extends in a third direction. For example... Figure 32 As shown in Figure ②, when a short circuit occurs between l and b, or between c and d, or between e and f, Figure 32 Compared to point e in ② Figure 32 The area at point e in ① is darker. Figure 32 Compared to ②, the f position in ② Figure 32 The area at f in ① is brighter. For example... Figure 32 A short circuit occurs between k and f in ③. Figure 32 Compared to ③, the f position is... Figure 32 The area at point f in section ① is brighter. Figure 32 Compared to point k in ③ Figure 32 The area at k in ① is darker.

[0092] Figure 33 for Figure 8 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 33 ① is the preset image. Figure 33 Images ② and ③ in the diagram are voltage contrast images of the detected structure. Figure 33 and Figure 32 Similar to what is shown, and Figure 32 The difference is that the first conductive line 104 also extends in a third direction. For example... Figure 33 As shown in Figure ②, when a short circuit occurs between l and m, or between c and d, or between e and f, Figure 33 Compared to point e in ② Figure 33 The area at point e in ① is darker. Figure 33 Compared to ②, the f position in ② Figure 33 The area at f in ① is brighter. For example... Figure 33 A short circuit occurs between k and f in ③. Figure 33 Compared to ③, the f position is... Figure 33 The area at point f in section ① is brighter. Figure 33 Compared to point k in ③ Figure 33 The area at k in ① is darker.

[0093] Figure 34 for Figure 26 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 34 ① is the preset image. Figure 34 Image ② shows the voltage contrast image of the detected structure. (Example:) Figure 34 As shown in Figure ①, the first group is grounded, and the second group is connected to the floating device. The charge and secondary electrons in a portion of the second conductive layer 102 connected to the first group are conducted away, thus the portion of the second conductive layer 102 connected to the first group exhibits a dark field. Conversely, the charge and secondary electrons in a portion of the second conductive layer 102 connected to the second group accumulate in the conductive lines of the second conductive layer 102 connected to the second group, thus the portion of the second conductive layer 102 connected to the second group exhibits a bright field. For example... Figure 34 As shown in Figure ②, when a short circuit occurs between d and m or between f and i, the brightness at point f and point i will change, with point i becoming brighter than the point below f. Figure 34 In ①, point i is darker, and point f is darker compared to... Figure 34 The area at f shown in ① is brighter. In some other specific examples, when d is disconnected from f or the first conductive line 104, the area at f will be brighter than... Figure 34 The area at f shown in ① is brighter.

[0094] Figure 35 for Figure 24 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 35 ① is the preset image. Figure 35 Image ② in the image shows the voltage contrast of the detected structure. Figure 35 and Figure 34 Similar to what is shown, and Figure 34 The difference is that the fourth conductive wire 107 extends along the second direction. For example... Figure 35 As shown in Figure ②, when a short circuit occurs between d and m or between f and n, the brightness at point f and point n will change, with point n becoming brighter than the point at m. Figure 35 In ①, point n is darker than point f. Figure 35 The area at f shown in ① is brighter.

[0095] Figure 36 for Figure 25 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 36 ① is the preset image. Figure 36 Image ② in the image shows the voltage contrast of the detected structure. Figure 36 and Figure 34 Similar to what is shown, and Figure 34 The difference is that the third conductive wire 106 extends along the second direction. For example... Figure 36 As shown in Figure ②, when a short circuit occurs between d and m or between p and n, the brightness at point p and n will change, with point n becoming brighter than the point p. Figure 36 In ①, point n is darker than point p. Figure 36 The area at point p shown in ① is brighter.

[0096] Figure 37 for Figure 27 The diagram shows the light / dark distribution corresponding to the structure shown, and Figure 37 ① is the preset image. Figure 37 Image ② in the image shows the voltage contrast of the detected structure. Figure 37 and Figure 36 Similar to what is shown, and Figure 36 The difference is that the fourth conductive wire 107 extends along the second direction. For example... Figure 37 As shown in Figure ②, when a short circuit occurs between d and m or between p and q, the brightness at point p and q will change, with point q becoming brighter than the point d. Figure 37 In ①, the area at q is darker, while the area at p is darker compared to q. Figure 37 The area at point p shown in ① is brighter.

[0097] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0098] The methods disclosed in the several method embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new method embodiments.

[0099] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A detection structure for electrical defects, characterized in that, include: A first conductive line layer, a conductive pillar layer, and a second conductive line layer are sequentially stacked along a first direction; wherein... The first conductive wire layer includes a first conductive wire and a second conductive wire arranged alternately along a second direction, wherein one of the first conductive wire and the second conductive wire is grounded and the other is connected to a floating device; the second conductive wire layer includes a third conductive wire and a fourth conductive wire arranged alternately along a third direction; the second direction intersects the third direction and is perpendicular to the first direction; The conductive pillar layer includes a plurality of conductive pillars arranged in an array along the second direction and the third direction; one end of the conductive pillar at opposite ends along the first direction is connected to a conductive line in the first conductive line layer, and the other end is connected to a conductive line in the second conductive line layer. The third conductive wire includes a plurality of first portions arranged along the second direction, each first portion being connected to a corresponding conductive post, and two adjacent first portions along the second direction being electrically isolated from each other. And / or, the fourth conductive line includes a plurality of second portions arranged along the second direction, each second portion being connected to one of the conductive posts, and two adjacent second portions along the second direction being electrically isolated from each other.

2. The electrical defect detection structure according to claim 1, characterized in that, The first conductive line includes a plurality of third portions arranged along the third direction, each third portion being connected to a corresponding conductive post, and adjacent third portions being electrically isolated from each other along the third direction; and / or, the second conductive line includes a plurality of fourth portions arranged along the third direction, each fourth portion being connected to a corresponding conductive post, and adjacent fourth portions being electrically isolated from each other along the third direction.

3. The electrical defect detection structure according to claim 1, characterized in that, Both the first conductive line and the second conductive line extend continuously along the third direction.

4. A detection structure for electrical defects, characterized in that, include: A first conductive line layer, a conductive pillar layer, and a second conductive line layer are sequentially stacked along a first direction; wherein... The first conductive line layer includes first conductive lines and second conductive lines arranged alternately along a second direction; the second direction is perpendicular to the first direction. The conductive pillar layer includes a plurality of conductive pillars arranged in an array along the second direction and the third direction. One end of the conductive post is connected to a conductive wire in the first conductive wire layer, and the other end is connected to a conductive wire in the second conductive wire layer; the third direction intersects the second direction and is perpendicular to the first direction. The first conductive line includes a plurality of third portions arranged along the third direction, with adjacent third portions electrically isolated from each other along the third direction; the second conductive line includes a plurality of fourth portions arranged along the third direction, with adjacent fourth portions electrically isolated from each other along the third direction; each conductive post is connected to one of the third portions or one of the fourth portions; the plurality of third portions and the plurality of fourth portions constitute a first group and a second group arranged alternately along the third direction, and both the first group and the second group include a plurality of third portions and fourth portions arranged along the second direction; one of the first group and the second group is grounded, and the other is connected to a floating device.

5. The electrical defect detection structure according to claim 4, characterized in that, The second conductive layer includes a third conductive line and a fourth conductive line arranged alternately along the third direction.

6. The electrical defect detection structure according to claim 5, characterized in that, The third conductive wire includes a plurality of first portions arranged along the second direction, each first portion being connected to a corresponding conductive post, and two adjacent first portions along the second direction being electrically isolated from each other. And / or, the fourth conductive line includes a plurality of second portions arranged along the second direction, each second portion being connected to one of the conductive posts, and two adjacent second portions along the second direction being electrically isolated from each other.

7. The electrical defect detection structure according to claim 5, characterized in that, Both the third conductive line and the fourth conductive line extend continuously along the second direction.

8. A method for detecting electrical defects, characterized in that, include: A detection structure for electrical defects as described in any one of claims 1 to 7 is provided; The detection structure is inspected using an electron beam inspection device to determine whether it has electrical defects.

9. The electrical defect detection method according to claim 8, characterized in that, The step of using an electron beam detection device to detect the detection structure to determine whether the detection structure has electrical defects includes: The detection structure is inspected using the electron beam defect detection equipment to obtain a voltage contrast image. Based on the difference between the bright / dark distribution in the voltage contrast image and the bright / dark distribution in the preset image, it is determined that the detection structure has an electrical defect; Based on the fact that the bright / dark distribution in the voltage contrast image is the same as the bright / dark distribution in the preset image, it is determined that the detection structure has no electrical defects.

10. The electrical defect detection method according to claim 9, characterized in that, The method further includes: The bright / dark distribution in the voltage contrast image is compared with the bright / dark distribution in a preset image to locate the position of the electrical defect.

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