Substrate support assembly, substrate processing apparatus, and substrate processing method

Abstract

The invention provides a substrate support assembly. A base of the substrate support assembly has a flow path. The first container is configured so that a first capacity inside the first container can be changed such that the heat transfer medium is supplied to the flow path via the at least one first pipe as a result of a decrease in the first capacity. The second container is configured so that the second capacity can be changed by a company that supplies gas to the flow path through the reduction of the second capacity passing through the inside of the second container. The first container and the second container are configured such that a decrease in one of the first capacity and the second capacity causes an increase in the other. The heat transfer medium supply unit further comprises at least one third pipe and a valve.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a substrate support assembly, a substrate processing apparatus, and a substrate processing method. Background Technology

[0002] The plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus described in Patent Document 1 below includes a chamber and an adsorption device. The adsorption device adsorbs the substrate. A refrigerant flow path is formed inside the adsorption device. Refrigerant is supplied to the refrigerant flow path from a refrigerant supply port. The refrigerant supplied to the refrigerant flow path is discharged from a refrigerant discharge port.

[0003] Previous technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2001-110885 Summary of the Invention

[0004] The technical problem to be solved by the invention This invention provides a technique for improving the temperature controllability of a substrate.

[0005] means for solving technical problems In one exemplary embodiment, the substrate support assembly includes a base, a substrate support portion on the base, and a heat transfer medium supply portion. The base has a flow path. The heat transfer medium supply portion is connected to the flow path. The heat transfer medium supply portion includes a first container, a first pipe, a second container, and a second pipe. The first container is configured to store a heat transfer medium therein. At least one first pipe is connected between a first end of the flow path and the first container. The second container is configured to store gas therein. The second pipe is connected between a second end of the flow path and the second container. The first container is configured to change its first capacity by supplying heat transfer medium to the flow path via at least one first pipe through a reduction in its internal first capacity. The second container is configured to change its second capacity by supplying gas to the flow path via at least one second pipe through a reduction in its internal second capacity. The first and second containers are configured such that a decrease in one of the first and second capacities results in an increase in the other. The heat transfer medium supply portion also includes at least one third pipe and a valve. The valve is connected between the first and second containers via at least one third piping.

[0006] Invention Effects According to one exemplary embodiment, the temperature controllability of the substrate is improved. Attached Figure Description

[0007] Figure 1 This is a diagram illustrating a structural example of a plasma processing system.

[0008] Figure 2This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0009] Figure 3 This is a schematic diagram illustrating a substrate support assembly according to an exemplary embodiment.

[0010] Figure 4 This is a cross-sectional view of a partition according to an exemplary embodiment.

[0011] Figure 5 This is a schematic diagram illustrating a substrate support assembly according to another exemplary embodiment.

[0012] Figure 6 This is a flowchart of a substrate processing method according to an exemplary embodiment. Detailed Implementation

[0013] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, the same or equivalent parts are labeled with the same symbols.

[0014] Figure 1 This is a diagram illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one type of processing gas to the plasma processing space; and at least one gas exhaust port for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas exhaust port is connected to the exhaust system 40 (described later). The substrate support assembly 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0015] The plasma generation unit 12 is configured to generate plasma from at least one type of processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0016] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control various components of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, the control unit 2 may be part or entirely included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read from and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0017] Hereinafter, a structural example of a capacitively coupled plasma processing apparatus, which is one example of plasma processing apparatus 1, will be described. Figure 2 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0018] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support assembly 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support assembly 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support assembly 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewalls 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support assembly 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0019] The substrate support assembly 11 includes a main body portion 5 and a ring assembly 112. The main body portion 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of the substrate W. Viewed from above, the annular region 5b of the main body portion 5 surrounds the central region 5a of the main body portion 5. The substrate W is disposed on the central region 5a of the main body portion 5, and the ring assembly 112 is disposed on the annular region 5b of the main body portion 5 such that it surrounds the substrate W on the central region 5a of the main body portion 5. Therefore, the central region 5a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 5b is also referred to as an annular support surface for supporting the ring assembly 112.

[0020] In one embodiment, the main body 5 includes a base 50 and a substrate support 51. The substrate support 51 is, for example, an electrostatic chuck. The base 50 includes a conductive component. The conductive component of the base 50 can function as a lower electrode. The substrate support 51 is disposed on the base 50. The substrate support 51 includes a ceramic component 51a and an electrostatic electrode 51b disposed within the ceramic component 51a. The ceramic component 51a has a central region 5a. In one embodiment, the ceramic component 51a also has an annular region 5b. Alternatively, other components surrounding the substrate support 51, such as an annular electrostatic chuck or an annular insulating component, may have an annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the substrate support 51 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later may be disposed within the ceramic component 51a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the base 50 and the at least one RF / DC electrode can function as multiple lower electrodes. Furthermore, the electrostatic electrode 51b can function as a lower electrode. Therefore, the substrate support assembly 11 includes at least one lower electrode.

[0021] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive material or an insulating material, and the cover rings are formed of an insulating material.

[0022] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the multiple gas inlets 13c. Furthermore, the spray head 13 includes at least one upper electrode. In addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) mounted on one or more openings formed in the sidewall 10a.

[0023] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one type of processing gas.

[0024] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Plasma is thus formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, thereby enabling the introduction of ionic components from the formed plasma into the substrate W.

[0025] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0026] The second RF generation unit 31b is configured to be coupled to at least one lower electrode via at least one impedance matching circuit and generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0027] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0028] In various embodiments, the first and second DC signals can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first DC generation unit 32a and the second DC generation unit 32b can be provided in addition to the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0029] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0030] Figure 3 This is a schematic diagram illustrating a substrate support assembly according to an exemplary embodiment. As described above, the substrate support assembly 11 includes a main body 5. The main body 5 includes a base 50 and a substrate support portion 51 on the base 50. The substrate support portion 51 is disposed on the base 50. In one embodiment, the base 50 may be supported on a substrate 10c via an insulating member 10b. Figure 3 In the example shown, the main body 5 is supported within the chamber 10 by an insulating member 10b. The insulating member 10b is disposed on a substrate 10c. The substrate 10c may form the bottom wall of the chamber 10.

[0031] In one embodiment, the substrate support assembly 11 may further include at least one heater 51c. The heater 51c is disposed within the substrate support portion 51. For example, the heater 51c is disposed within the ceramic component 51a of the substrate support portion 51. The heater 51c is located below the electrostatic electrode 51b. The heater 51c generates heat by being supplied with power from a power source (not shown) controlled by a heater controller HC. The substrate support assembly 11 may include a temperature control module configured to adjust at least one of the substrate support portion 51, the ring assembly 112, and the substrate W to a target temperature. Furthermore, the substrate support assembly 11 may include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface and the central region 5a of the substrate W.

[0032] The base 50 has flow path 55 and flow path 50a. In one embodiment, flow path 55 is a flow path for at least one heat transfer medium, and flow path 50a is a flow path for another heat transfer medium different from the at least one heat transfer medium. Flow paths 50a and 55 may be provided within the base 50. Flow paths 50a and 55 may be independent of each other.

[0033] In one embodiment, at least one heat transfer medium can be multiple heat transfer media. The multiple heat transfer media include a first heat transfer medium M1 and a second heat transfer medium M2. The first heat transfer medium M1 has a first specific gravity. The second heat transfer medium M2 has a second specific gravity. The second specific gravity is less than the first specific gravity. The first heat transfer medium M1 has a first thermal conductivity. The second heat transfer medium M2 has a second thermal conductivity. The first thermal conductivity may be greater than the second thermal conductivity.

[0034] In one embodiment, the first heat transfer medium M1 can be a liquid metal. This liquid metal can be a metal or eutectic alloy having a melting point below -10°C at atmospheric pressure and a thermal conductivity of 5 W / mK or higher. The melting point of this liquid metal at atmospheric pressure can be below -15°C. For example, this liquid metal is a Ga-In-Sn alloy. In the Ga-In-Sn alloy, the concentration of Ga can be 62% by mass, the concentration of In can be 25% by mass, and the concentration of Sn can be 13% by mass. As an example, the Ga-In-Sn alloy can be Galinstan (registered trademark). In one embodiment, the first heat transfer medium M1 can be silicone oil, anhydrous alcohol, ethylene glycol, or a fluorinated refrigerant liquid. In one example, the first heat transfer medium M1 can be water.

[0035] In one embodiment, the second heat transfer medium M2 can be a liquid different from the liquid metal. This other liquid can be a liquid that does not chemically react with the liquid metal and is free of water. Furthermore, the other liquid can have a melting point lower than that of the liquid metal. This other liquid is, for example, silicone oil, anhydrous alcohol, ethylene glycol, or a fluorinated refrigerant. In one example, the second heat transfer medium M2 can be water. The first heat transfer medium M1 and the second heat transfer medium M2 can be liquids that are incompatible with each other.

[0036] In one embodiment, the base 50 may have a first base 52, a second base 53, and a support member 54. The first base 52 supports a substrate support portion 51 disposed thereon. The second base 53 is disposed below the first base 52 and has a flow path 50a therein. The support member 54 is located between the first base 52 and the second base 53 and supports the first base 52. The support member 54 defines a flow path 55 between the first base 52 and the second base 53. In one example, the flow path 55 extends between the flow path 50a and the substrate support portion 51.

[0037] In one embodiment, the thermal conductivity of the material of the support member 54 may be less than that of the material of the base 50. The thermal conductivity of the material of the support member 54 may be less than 1 W / mK. The support member 54 may be made of at least one material selected from the group consisting of resin materials, ceramics, and composite materials. The support member 54 may be made of fluororesin. The support member 54 may be made of at least one material selected from the group consisting of polytetrafluoroethylene, polyetheretherketone, and porous ceramics. The support member 54 may be made of composite materials. Composite materials are materials made by combining two or more different materials. For example, composite materials are materials made by combining two or more materials selected from the group consisting of resins, metals, glass, and carbon.

[0038] The alternative heat transfer medium, different from at least one heat transfer medium, may be, for example, a refrigerant such as brine or gas. The substrate support assembly 11 may also include a cooler unit. The cooler unit may be connected to the flow path 50a to supply the alternative heat transfer medium to the flow path 50a.

[0039] The substrate support assembly 11 includes a heat transfer medium supply unit 6. The heat transfer medium supply unit 6 is connected to the flow path 55 and is configured to supply a heat transfer medium selected from the various heat transfer media to the flow path 55. In addition, the temperature control module may include the heat transfer medium supply unit 6, the heater 51c, the heater controller HC, the flow path 55, the flow path 50a, the cooler unit, or a combination thereof.

[0040] In one embodiment, the heat transfer medium supply unit 6 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 6 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 6 may also be disposed outside the chamber 10. The heat transfer medium supply unit 6 is insulated from the chamber 10.

[0041] The heat transfer medium supply unit 6 includes at least one first pipe 71, a first container 61, at least one second pipe 72, a second container 62, at least one third pipe 73, and a valve 73a (third valve). In one embodiment, the heat transfer medium supply unit 6 may further include a valve 71a (first valve), a valve 72a (second valve), at least one fourth pipe 74, and a valve 74a (fourth valve).

[0042] At least one first piping 71 is connected between the first end 55a of the flow path 55 and the first container 61. In one embodiment, a valve 71a is connected between the first end 55a and the first container 61 via at least one first piping 71. Figure 3 In the example shown, the heat transfer medium supply unit 6 includes a plurality of first pipes 71. One of the plurality of first pipes 71 connects a first end 55a to a valve 71a, and another of the plurality of first pipes 71 connects the valve 71a to a first container 61. Additionally, as described later, the first container 61 may be located below the second container 62. The location where another of the plurality of first pipes 71 connects to the first container 61 may be, for example, the bottom of the first container 61.

[0043] At least one second pipe 72 is connected between the second end 55b of the flow path 55 and the second container 62. The second end 55b is the end of the flow path 55 on the side opposite to the first end 55a. In one embodiment, a valve 72a is connected between the second end 55b and the second container 62 via at least one second pipe 72. Figure 3 In the example shown, the heat transfer medium supply unit 6 includes a plurality of second pipes 72. One of the plurality of second pipes 72 connects a second end 55b to a valve 72a, and another of the plurality of second pipes 72 connects the valve 72a to a second container 62. Additionally, the location where the other of the plurality of second pipes 72 is connected to the second container 62 may be, for example, the top (or upper wall) of the second container 62.

[0044] At least one third pipe 73 is connected between the first container 61 and the second container 62. A valve 73a is connected between the first container 61 and the second container 62 via at least one third pipe 73. Figure 3In the example shown, the heat transfer medium supply unit 6 includes a plurality of third pipes 73. One of the plurality of third pipes 73 interconnects the first container 61 with a valve 73a, and another of the plurality of third pipes 73 interconnects the valve 73a with a second container 62. Furthermore, one of the plurality of third pipes 73 is connected to the first container 61 at a higher position than the other of the plurality of first pipes 71, for example, at the top (or upper wall) of the first container 61. And the other of the plurality of third pipes 73 is connected to the second container 62 at a lower position than the other of the plurality of second pipes 72, for example, at the bottom of the second container 62.

[0045] At least one fourth pipe 74 is connected between the first end 55a and the first container 61. The at least one fourth pipe 74 may be arranged side-by-side with at least one first pipe 71, or it may merge with at least one first pipe 71. The position of the at least one fourth pipe 74 connected to the first container 61 is above the position of the at least one first pipe 71 connected to the first container 61. Furthermore, the position of the at least one fourth pipe 74 connected to the first container 61 is below the position of the at least one third pipe 73 connected to the first container 61. A valve 74a is connected between the first end 55a and the first container 61 via at least one fourth pipe 74. Figure 3 In the example shown, the heat transfer medium supply unit 6 includes a plurality of fourth pipes 74. One of the plurality of fourth pipes 74 interconnects a first end 55a with a valve 74a, and another of the plurality of fourth pipes 74 interconnects a valve 74a with a first container 61. One of the plurality of fourth pipes 74 may merge with at least one first pipe 71 between the first end 55a and the valve 74a.

[0046] The first container 61 is configured to store a first heat transfer medium M1 therein. In one embodiment, the first container 61 may be configured to further store a second heat transfer medium M2 therein. The first container 61 is configured to change its internal first capacity. The first container 61 is configured to supply the first heat transfer medium M1 or the second heat transfer medium M2 to the flow path 55 via at least one first pipe 71 by reducing its internal first capacity.

[0047] The second container 62 is configured to store gas within it. The second container 62 may also be configured to further store a second heat transfer medium M2 within it. The second container 62 is configured to change its internal second capacity. The second container 62 is configured to supply gas to the flow path 55 via at least one second pipe 72 by reducing its internal second capacity. This gas is, for example, nitrogen or a rare gas. The first container 61 and the second container 62 are configured such that a decrease in the first capacity or the second capacity leads to an increase in the other.

[0048] In one embodiment, the first container 61 includes a sidewall. The sidewall of the first container 61 includes a first bellows 61a. The first container 61 is configured to change its first capacity by extending or retracting the first bellows 61a. Furthermore, the second container 62 includes a sidewall. The sidewall of the second container 62 includes a second bellows 62a. The second container 62 is configured to change its second capacity by extending or retracting the second bellows 62a.

[0049] In one embodiment, the first container 61 and the second container 62 are configured to be adjacent to each other along the vertical direction D1, and the extension and retraction directions of the first bellows 61a and the second bellows 62a are along the vertical direction D1. In one example, the first container 61 is disposed below the second container 62, and the second container 62 is disposed above the first container 61. In one embodiment, the first container 61 and the second container 62 include a partition wall 63 disposed between the first bellows and the second bellows. The partition wall 63 includes the upper wall of the first container 61 and the bottom wall of the second container 62. Figure 3 In the example shown, the first container 61 and the second container 62 are separated by a single partition 63. The partition 63 may define the first container 61 together with the first bellows 61a. The partition 63 may define the second container 62 together with the second bellows 62a.

[0050] In one embodiment, the partition wall 63 is configured to move along the vertical direction D1. Furthermore, the valve 73a may be configured to move together with the partition wall 63. At least one third pipe 73 may also be configured to move together with the partition wall 63. Upward movement of the partition wall 63 causes the first bellows to extend and the second bellows to contract, thereby increasing the first volume and decreasing the second volume. Conversely, downward movement of the partition wall 63 causes the first bellows to contract and the second bellows to extend, thereby decreasing the first volume and increasing the second volume.

[0051] In one embodiment, at least one of the inner surfaces of the first container 61, the plurality of first pipes 71, and the flow path 55 may be made of resin or ceramic. In this case, embrittlement of the inner surfaces caused by liquid metal can be suppressed. In one embodiment, at least one of the inner surfaces of the second container 62, the plurality of second pipes 72, and at least one third pipe 73 may be made of resin or ceramic. In this case, embrittlement of the inner surfaces caused by liquid metal can be suppressed.

[0052] The first container 61 is positioned below the second container 62, so that when the valve 73a is open, the first heat transfer medium M1 and the second heat transfer medium M2 stored in the second container 62 are recovered to the first container 61 via at least one third pipe 73.

[0053] In one embodiment, the substrate support assembly 11 may further include a drive mechanism 8. The drive mechanism 8 is configured to move the partition 63 along the vertical direction D1. The movement of the partition 63 along the vertical direction D1 by the drive mechanism 8 causes one of the first capacity and the second capacity to increase and the other to decrease.

[0054] In one embodiment, the partition 63 may include a peripheral portion 63a projecting outward in a direction intersecting the vertical direction D1, i.e., relative to the sidewall of the first container 61. The drive mechanism 8 may include an actuator 80 and a connector 81. The actuator 80 may extend or retract along the vertical direction D1, such as a cylinder or a hydraulic cylinder. In one example, the actuator 80 is a cylinder. The connector 81 connects the peripheral portion 63a to the actuator 80.

[0055] In one embodiment, the actuator 80 may be disposed below the substrate 10c. That is, the actuator 80 may be disposed outside the chamber 10. Figure 3 In the example shown, the actuator 80 is fixed to the lower surface of the substrate 10c via the connecting member 10d.

[0056] Figure 4 This is a cross-sectional view of a partition according to an exemplary embodiment. The connector 81 may include a plurality of shafts 81a. The plurality of shafts 81a are connected to the peripheral portion 63a. Figure 4 In the example shown, there are four shafts 81a. The shafts 81a are arranged at equal intervals along the circumferential direction. The substrate 10c is provided with a plurality of through holes 10h. The shafts 81a pass through the plurality of through holes 10h respectively to connect the actuator 80 to the peripheral portion 63a.

[0057] When the first heat transfer medium M1 is absent in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature far from that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively high temperature range. When the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively low temperature range. In the substrate support assembly 11, the first heat transfer medium M1 is supplied to the flow path 55 and then recovered from the flow path 55, thus the temperature control of the substrate in the substrate support assembly 11 is excellent.

[0058] The following is for reference. Figure 5 The following describes a substrate support assembly according to another exemplary embodiment. Figure 5This is a cross-sectional view of a substrate support assembly according to another exemplary embodiment. In the plasma processing apparatus 1, a method may be employed... Figure 4 The substrate support assembly 11A shown here is used instead of the substrate support assembly 11. Hereinafter, the substrate support assembly 11A will be described from the point of view of the differences between it and the substrate support assembly 11.

[0059] In the substrate support assembly 11A, flow path 50a is a flow path for at least one heat transfer medium. Flow path 55 can be a flow path for another heat transfer medium different from the at least one heat transfer medium. At least one first pipe 71 is connected between a first end of flow path 50a and a first container 61. At least one second pipe 72 is connected between a second end of flow path 50a and a second container. The second end of flow path 50a is the end of flow path 50a opposite to the first end. The substrate support assembly 11A may also include a cooler unit. The cooler unit may be connected to flow path 55 to supply another heat transfer medium to flow path 55. For example, the cooler unit is connected to both the first end 55a and the second end 55b.

[0060] The following is for reference. Figure 6 The following describes a substrate processing method according to an exemplary embodiment. Figure 6 This is a flowchart of a substrate processing method according to an exemplary embodiment. Figure 6 The substrate processing method shown (hereinafter referred to as "Method MT") can be used in... Figure 1 The plasma processing system shown is used for this process. Hereinafter, we will describe an example of performing a substrate processing method on the substrate W by controlling the various parts of the plasma processing apparatus 1 via the control unit 2 or an operator.

[0061] Method MT includes operations STa, STb, STc, STd, STe, and STf. Method MT may include operations ST1 and ST2.

[0062] First, process STa is performed. In process STa, a substrate W is prepared on a substrate support 51 within the chamber 10 of the plasma processing apparatus 1. The process of method MT, which is performed after process STa, is performed with the substrate W placed on the substrate support 51.

[0063] In one embodiment, step ST1 can be performed after step STa and before step STb. In step ST1, the plasma processing apparatus 1 is in a standby state. In step ST1, power can be supplied to the heater 51c from a power source controlled by the heater controller HC, provided that valves 71a, 72a, 73a, and 74a are closed and at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in step ST1 can be less than the power supplied to the heater 51c in step STb, which will be described later. In one example, a first power can be supplied to the heater 51c. The temperature of the substrate W on the substrate support 51 can be achieved by the heating effect of the heater 51c, becoming a first temperature.

[0064] Step STb is performed after step STa. Step STb can also be performed after step ST1. In step STb, the temperature of the substrate W prepared on the substrate support 51 rises. Step STb includes the following steps: with valves 71a, 72a, 73a, and 74a closed and at least not the first heat transfer medium M1 and the second heat transfer medium M2 supplied to the flow path 55, power is supplied to the heater 51c from a power source controlled by the heater controller HC. The power supplied to the heater 51c in step STb can be greater than the power supplied to the heater 51c in step ST1. In one example, a second power can be supplied to the heater 51c. The second power is greater than the first power. The substrate W on the substrate support 51 can be heated to a second temperature by the heating of the heater 51c. The second temperature is greater than the first temperature.

[0065] In process STb, since at least the first heat transfer medium M1 and the second heat transfer medium M2 are absent in flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature far removed from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively high temperature range.

[0066] After step STb, step STc is performed. In step STc, the temperature of the substrate W disposed on the substrate support 51 is adjusted. The temperature of the substrate W is adjusted to a temperature used for substrate processing of the substrate W. Step STc includes steps STc1, STc2, and STc3. Step STc includes the following step: supplying a smaller amount of power than that in step STb to the heater 51c from a power source controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 can be maintained at a second temperature by the heating of the heater 51c.

[0067] In steps STc1, STc2, and STc3, step STc1 is performed first. In step STc1, valves 72a and 74a are opened. After step STc1, step STc2 is performed. In step STc2, partition 63 is moved downward by drive mechanism 8. By moving partition 63 downward, the second heat transfer medium M2 in the first container 61 is supplied to flow path 55 via at least one fourth pipe 74. After step STc2, step STc3 is performed. In step STc3, valves 72a and 74a are closed. Through step STc3, the second heat transfer medium M2 is held within flow path 55.

[0068] After step STc, step STd is performed. In step STd, substrate processing is performed on the substrate W disposed on the substrate support 51. In one example, plasma processing may be performed in step STd. Step STd includes steps STd1 and STd2. Step STd includes the following step: supplying a smaller amount of power than that in step STb to the heater 51c from a power source controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 can be maintained at a second temperature by the heating of the heater 51c.

[0069] In processes STd1 and STd2, process STd1 is performed first. In process STd1, processing gas is supplied into chamber 10 from the gas inlet (for example, spray head 13). After process STd1, process STd2 is performed. In process STd2, plasma is generated from the processing gas in chamber 10 by plasma generation unit 12.

[0070] After process STd, process STe is performed. In process STe, the first heat transfer medium M1 is supplied to the flow path 55. In process STe, the temperature of the substrate W disposed on the substrate support 51 is reduced. Process STe includes processes STe1, STe2, and STe3 to supply the first heat transfer medium M1 to the flow path 55.

[0071] In processes STe1, STe2, and STe3, process STe1 is performed first. In process STe1, valves 71a and 72a are opened. After process STe1, process STe2 is performed. In process STe2, partition wall 63 is moved downward by drive mechanism 8. By moving partition wall 63 downward, the first heat transfer medium M1 in the first container 61 is supplied to flow path 55 via at least one first pipe 71. By supplying the first heat transfer medium M1 to flow path 55, the second heat transfer medium M2 in flow path 55 can be recovered into the second container 62. After process STe2, process STe3 is performed. In process STe3, valves 71a and 72a are closed. Through process STe3, the first heat transfer medium M1 is held within flow path 55.

[0072] In process STe, because the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to that of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted within a relatively low temperature range.

[0073] In one embodiment, step ST2 can be performed after step STe and before step STf. Step ST2 includes steps ST21, ST22, and ST23.

[0074] In steps ST21, ST22, and ST23, step ST21 is performed first. In step ST21, valves 72a and 74a are opened. In step ST21, valve 71a can be further opened. After step ST21, step ST22 is performed. In step ST22, partition 63 is moved upward by drive mechanism 8. By moving partition 63 upward, gas in the second container 62 is supplied to flow path 55 via at least one second pipe 72. The first heat transfer medium M1 in flow path 55 can be recovered to the first container 61 via at least one fourth pipe 74. The first heat transfer medium M1 in flow path 55 can be recovered to the first container 61 via at least one first pipe 71. After step ST22, step ST23 is performed. In step ST23, valves 74a and 72a are closed.

[0075] After step STe, step STf is performed. Step STf may be performed after step ST2. In step STf, at least the second heat transfer medium M2 is recovered from the second container 62 to the first container 61. In step STf, both the first heat transfer medium M1 and the second heat transfer medium M2 can be recovered from the second container 62 to the first container 61. Step STf includes the step of opening valve 73a with valves 71a, 72a, and 74a closed and partition wall 63 moved upward. The second heat transfer medium M2 is recovered from the second container 62 to the first container 61 via at least one third pipe 73.

[0076] The above descriptions have illustrated various exemplary embodiments, but the embodiments are not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0077] The first container 61 may not include the first bellows 61a. The second container 62 may not include the second bellows 62a. The first container 61 and the second container 62 may each be composed of a cylinder and a piston. Each piston is configured to change the volume of each cylinder. The drive mechanism 8 may be configured to operate the pistons of the first container 61 and the second container 62 respectively. The first container 61 and the second container 62 may each be composed of a single cylinder and a partition wall 63. In this case, the partition wall 63 is configured to slide within the single cylinder. The partition wall 63 acts as a piston within that cylinder and is configured to change the volume of the first container 61 and the second container 62 respectively.

[0078] Flow path 55 may include multiple independent flow paths. In one example, flow path 55 may include a first flow path located below the central region 5a (substrate support surface) and a second flow path located below the annular region 5b (annular support surface).

[0079] In method MT, it is not necessary to execute all of the steps STa to STf. In one example, in method MT, some of the steps STa to STf can be omitted.

[0080] Various exemplary embodiments included in this invention are described below in [E1] to [E16].

[0081] [E1] A substrate support assembly comprising: The base has flow paths; A substrate support portion, which is disposed on the base; and The heat transfer medium supply section is connected to the flow path. The heat transfer medium supply unit includes: The first container is configured to store a heat transfer medium inside it; At least one first piping is connected between the first end of the flow path and the first container; A second container, configured to store a gas therein, wherein the specific gravity of the heat transfer medium is greater than that of the gas; and At least one second piping is connected between the second end of the flow path and the second container. The first container is configured to change its first capacity by supplying the heat transfer medium to the flow path via the at least one first pipe through a reduction in its internal first capacity. The second container is configured to change its second capacity by supplying gas to the flow path via the at least one second piping through a reduction in its internal second capacity. The first container and the second container are configured such that a decrease in the capacity of one of the first and second containers leads to an increase in the capacity of the other. The heat transfer medium supply unit also includes: At least one third piping; and A valve connected between the first container and the second container via at least one third piping.

[0082] [E2] According to the substrate support assembly described in E1, wherein... The first container includes a sidewall containing a first bellows and is configured to change the first capacity by extending or retracting the first bellows. The second container includes a sidewall containing a second bellows and is configured to change the second capacity by means of the expansion and contraction of the second bellows.

[0083] [E3] According to the substrate support assembly described in E2, wherein... The first container is positioned below the second container.

[0084] [E4] According to the substrate support assembly described in E2 or E3, wherein... The first container and the second container include a partition wall disposed between the first bellows and the second bellows. The first and second corrugated pipes are configured to expand and contract by moving vertically through the partition wall.

[0085] [E5] According to the substrate support assembly described in E4, wherein... The partition wall is the upper wall of the first container and the bottom wall of the second container.

[0086] [E6] According to the substrate support assembly described in E4 or E5, wherein... The valve is configured to move together with the partition.

[0087] [E7] The substrate support assembly according to any one of E4 to E6 further comprises: A drive mechanism configured to move the partition along the vertical direction.

[0088] [E8] According to the substrate support assembly described in E7, wherein... The partition wall includes a peripheral portion that projects outward relative to the sidewall of the first container. The drive mechanism includes: Actuator; and A connector that connects the periphery to the actuator to move the partition along the vertical direction.

[0089] [E9] According to the substrate support assembly described in E8, it further comprises: Substrate; and Insulating components disposed on the substrate, The base is supported on the substrate via the insulating component. The heat transfer medium supply unit is disposed between the base and the substrate. The actuator is disposed below the substrate. The substrate is provided with a plurality of through holes located below the peripheral portion. The connector includes multiple shafts. The plurality of shafts pass through the plurality of through holes and are connected to the peripheral portion.

[0090] [E10] According to the substrate support assembly described in E8 or E9, wherein... The actuator includes a cylinder.

[0091] [E11] According to any one of E1 to E10, the substrate support assembly, wherein... The heat transfer medium supply unit also includes a valve connected between the first end and the first container via the at least one first pipe.

[0092] [E12] According to any one of E1 to E11, the substrate support assembly, wherein... The heat transfer medium supply unit also includes a valve connected between the second end and the second container via the at least one second pipe.

[0093] [E13] According to any one of E1 to E12, the substrate support assembly, wherein... The heat transfer medium is liquid metal.

[0094] [E14] According to any one of E1 to E13, the substrate support assembly, wherein... At least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

[0095] [E15] According to any one of E1 to E14, the substrate support assembly, wherein... The heat transfer medium is the first heat transfer medium. The first container is capable of storing inside it a second heat transfer medium having a specific gravity that is less than that of the first heat transfer medium and greater than that of the gas. The heat transfer medium supply unit also includes: At least one fourth piping; and A valve connected between the first end and the first container via at least one fourth pipe. The position where the at least one fourth pipe is connected to the first container is above the position where the at least one first pipe is connected to the first container.

[0096] [E16] A substrate processing apparatus comprising: Chambers; and The substrate support assembly described in any one of E1 to E15 is configured to support the substrate within the cavity.

[0097] As can be understood from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

[0098] Symbol Explanation 1-Plasma processing apparatus, 6-Heat transfer medium supply unit, 8-Drive mechanism, 10-Cavity, 10c-Substrate, 10h-Through hole, 11, 11A-Substrate support assembly, 12-Plasma generation unit, 50-Base, 50a, 55-Flow path, 51-Substrate support, 51c-Heater, 55a-First end, 55b-Second end, 61-First container, 62-Second container, 61a-First bellows 62a - Second bellows, 63 - Partition wall, 63a - Peripheral part, 71 - First piping, 72 - Second piping, 73 - Third piping, 74 - Fourth piping, 71a - First valve, 72a - Second valve, 73a - Third valve, 74a - Fourth valve, 80 - Actuator, 81 - Connector, 81a - Shaft, D1 - Up and down direction, HC - Heater controller, M1 - First heat transfer medium, M2 - Second heat transfer medium, W - Base plate.

Claims

1. A substrate support assembly, characterized in that, have: The base has flow paths; A substrate support portion, which is disposed on the base; and The heat transfer medium supply section is connected to the flow path. The heat transfer medium supply unit includes: The first container is configured to store a heat transfer medium inside it; At least one first piping is connected between the first end of the flow path and the first container; A second container, configured to store a gas therein, wherein the specific gravity of the heat transfer medium is greater than that of the gas; and At least one second piping is connected between the second end of the flow path and the second container. The first container is configured to change its first capacity by supplying the heat transfer medium to the flow path via the at least one first pipe through a reduction in its internal first capacity. The second container is configured to change its second capacity by supplying gas to the flow path via the at least one second piping through a reduction in its internal second capacity. The first container and the second container are configured such that a decrease in the capacity of one of the first and second containers leads to an increase in the capacity of the other. The heat transfer medium supply unit also includes: At least one third piping; and A valve connected between the first container and the second container via at least one third piping.

2. The substrate support assembly according to claim 1, wherein, The first container includes a sidewall containing a first bellows and is configured to change the first capacity by extending or retracting the first bellows. The second container includes a sidewall containing a second bellows and is configured to change the second capacity by means of the expansion and contraction of the second bellows.

3. The substrate support assembly according to claim 2, wherein, The first container is positioned below the second container.

4. The substrate support assembly according to claim 3, wherein, The first container and the second container include a partition wall disposed between the first bellows and the second bellows. The first and second corrugated pipes are configured to expand and contract by moving vertically through the partition wall.

5. The substrate support assembly according to claim 4, wherein, The partition wall is the upper wall of the first container and the bottom wall of the second container.

6. The substrate support assembly according to claim 4, wherein, The valve is configured to move together with the partition.

7. The substrate support assembly according to claim 4, wherein, It also has: A drive mechanism configured to move the partition along the vertical direction.

8. The substrate support assembly according to claim 7, wherein, The partition wall includes a peripheral portion that projects outward relative to the sidewall of the first container. The drive mechanism includes: Actuator; and A connector that connects the periphery to the actuator to move the partition along the vertical direction.

9. The substrate support assembly according to claim 8, wherein, It also has: Substrate; and Insulating components disposed on the substrate, The base is supported on the substrate via the insulating component. The heat transfer medium supply unit is disposed between the base and the substrate. The actuator is disposed below the substrate. The substrate is provided with a plurality of through holes located below the peripheral portion. The connector includes multiple shafts. The plurality of shafts pass through the plurality of through holes and are connected to the peripheral portion.

10. The substrate support assembly according to claim 8, wherein, The actuator includes a cylinder.

11. The substrate support assembly according to any one of claims 1 to 10, wherein, The heat transfer medium supply unit also includes a valve connected between the first end and the first container via the at least one first pipe.

12. The substrate support assembly according to any one of claims 1 to 10, wherein, The heat transfer medium supply unit also includes a valve connected between the second end and the second container via the at least one second pipe.

13. The substrate support assembly according to any one of claims 1 to 10, wherein, The heat transfer medium is liquid metal.

14. The substrate support assembly according to claim 13, wherein, At least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

15. The substrate support assembly according to any one of claims 3 to 10, wherein, The heat transfer medium is the first heat transfer medium. The first container is capable of storing inside it a second heat transfer medium having a specific gravity that is less than that of the first heat transfer medium and greater than that of the gas. The heat transfer medium supply unit also includes: At least one fourth piping; and A valve connected between the first end and the first container via at least one fourth pipe. The position where the at least one fourth pipe is connected to the first container is above the position where the at least one first pipe is connected to the first container.

16. A substrate processing apparatus, characterized in that, have: Chambers; and The substrate support assembly according to any one of claims 1 to 10 is configured to support the substrate within the cavity.

17. A substrate processing method, performed in a substrate processing apparatus, characterized in that, The substrate processing apparatus includes: Chamber; A substrate support assembly configured to support a substrate within the cavity; A heater, which is disposed within the substrate support portion of the substrate support assembly; A heater controller, which is electrically connected to the heater; A gas inlet section, configured to introduce processing gas into the chamber; and The plasma generation unit is configured to generate plasma from the processing gas within the chamber. The substrate support assembly includes: The base has flow paths; The substrate support portion is disposed on the base; and The heat transfer medium supply section is connected to the flow path. The heat transfer medium supply unit includes: The first container has a partition wall as its upper wall and a side wall including a first bellows that can be extended and retracted by moving vertically through the partition wall, and is configured to store a first heat transfer medium and a second heat transfer medium inside it, and is configured to change the first capacity by supplying the first heat transfer medium or the second heat transfer medium to the flow path via at least one first pipe by reducing the first capacity inside it. The at least one first piping; A first valve is connected between the first end of the flow path and the first container via the at least one first pipe. The second container has the partition wall as its bottom wall and a side wall including a second bellows that can expand and contract by moving vertically through the partition wall, and is configured to store gas therein, and is configured to change the second capacity by supplying the gas to the flow path via at least one second pipe by reducing the second capacity therein, wherein the specific gravity of the second heat transfer medium is less than the specific gravity of the first heat transfer medium and greater than the specific gravity of the gas. The at least one second piping; A second valve is connected between the second end of the flow path and the second container via the at least one second piping. At least one third piping; A third valve is connected between the first container and the second container via the at least one third piping. At least one fourth piping is connected to the first container above the location where the at least one first piping is connected to the first container; A fourth valve, which is connected between the first end and the first container via the at least one fourth pipe; and The drive mechanism is configured to move the partition wall in the vertical direction. The substrate processing method includes the following steps: (a) A substrate is prepared on the substrate support portion; (b) After (a), the temperature of the substrate is increased; (c) After (b), the temperature of the substrate is adjusted to a temperature for substrate processing of the substrate; (d) After (b), the substrate is subjected to the substrate processing; (e) After (d), the temperature of the substrate is lowered; and (f) Following (e), at least the second heat transfer medium is recovered from the second container. Step (b) includes the following steps: While the first valve, the second valve, the third valve, and the fourth valve are closed and at least the first heat transfer medium and the second heat transfer medium are not supplied to the flow path, power is supplied from the heater controller to the heater. Steps (c) and (d) include the following steps: during steps (c) and (d), a smaller amount of electricity than that in step (b) is supplied from the heater controller to the heater. In order to supply the second heat transfer medium to the flow path, step (c) includes the following steps: (c1) Open the second valve and the fourth valve; (c2) After (c1), the partition wall is moved downward by the drive mechanism; and (c3) After (c2), close the second valve and the fourth valve. The (d) step includes the following steps: (d1) Supplying the processing gas from the gas inlet into the chamber; and (d2) Plasma is generated from the processing gas within the chamber via the plasma generation unit. In order to supply the first heat transfer medium to the flow path, step (e) includes the following steps: (e1) Open the first valve and the second valve; (e2) Following (e1), the partition wall is moved downward by the drive mechanism; and (e3) After (e2), close the first valve and the second valve. The (f) step includes the following procedure: opening the third valve while the first valve, the second valve, and the fourth valve are closed and the partition wall is moved upward.

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