Plasma distribution regulation and control mechanism and plasma processing device

Abstract

The invention provides a plasma distribution regulation and control mechanism and a plasma processing device, relates to the technical field of plasma processing, and is used for solving the problem of central singularity caused by non-uniform radial density of plasmas in the prior art. Specifically, the plasma distribution regulation and control mechanism comprises a main magnet assembly which is annularly distributed; the auxiliary magnet assembly comprises at least one pair of auxiliary magnet structures, each pair of auxiliary magnet structures comprises a first auxiliary magnet structure and a second auxiliary magnet structure, and the first auxiliary magnet structure and the second auxiliary magnet structure are symmetrically arranged relative to the central axis of the main magnet assembly; the magnetizing directions of the first auxiliary magnet structure and the second auxiliary magnet structure are opposite and are parallel to the central axis of the main magnet assembly; the auxiliary magnet assembly is rotatable about a central axis of the main magnet assembly.

Description

Technical Field

[0001] This application relates to the field of plasma processing technology, and in particular to a plasma distribution control mechanism and a plasma processing device. Background Technology

[0002] In plasma processing devices, plasma is excited by radio frequency energy to perform etching, chemical vapor deposition, and cleaning processes on semiconductor wafers at the atomic or molecular level. Taking a capacitively coupled plasma etching device as an example, it includes an upper electrode, a lower electrode, a radio frequency power supply, and a gas supply assembly. The upper and lower electrodes are arranged parallel and spaced apart to form a processing space. The radio frequency power supply applies a radio frequency electric field between the upper and lower electrodes. Electrons in the processing space gain kinetic energy under the influence of the radio frequency electric field and collide with the gas injected into the processing space by the gas supply assembly, causing the gas to ionize and form and maintain plasma. The plasma etches the wafer fixed on the lower electrode. However, in the processing space where radio frequency energy-excited plasma exists, there is a problem of non-uniform plasma density.

[0003] To improve plasma uniformity, a main magnet that can be individually excited can be coaxially arranged on the upper electrode. The main magnet includes multiple ring electromagnets that gradually expand radially. By selectively energizing one or more of the electromagnets, a magnetic field with magnetic field lines running through the processing space can be formed, thereby enabling radial control of the plasma density within the processing space.

[0004] However, the aforementioned individually excited master magnet does not have sufficient freedom in controlling the plasma within the processing space, especially in the central region of the wafer, where plasma density accumulates, forming a plasma density singularity, which affects the uniformity of etching. Summary of the Invention

[0005] This application discloses a plasma distribution control mechanism and a plasma processing device to solve the problem of central singularity caused by non-uniform radial density of plasma in the prior art.

[0006] In a first aspect, this application provides a plasma distribution control mechanism, including a main magnet assembly, an auxiliary magnet assembly, and a drive assembly.

[0007] The main magnet assembly is distributed in a ring; the auxiliary magnet assembly includes at least one pair of auxiliary magnet structures, each pair of auxiliary magnet structures including a first auxiliary magnet structure and a second auxiliary magnet structure, the first auxiliary magnet structure and the second auxiliary magnet structure are symmetrically arranged with respect to the central axis of the main magnet assembly, and the magnetization directions of the first auxiliary magnet structure and the second auxiliary magnet structure are opposite and both are parallel to the central axis of the main magnet assembly; the auxiliary magnet assembly is rotatable about the central axis of the main magnet assembly.

[0008] Because the auxiliary magnet assembly includes at least one pair of auxiliary magnet structures, with the first and second auxiliary magnet structures in each pair symmetrically arranged relative to the central axis of the main magnet assembly, and their magnetization directions opposite and both parallel to the central axis of the main magnet assembly, the first and second auxiliary magnet structures generate a magnetic field orthogonal to the central axis of the main magnet assembly. The horizontal component of this magnetic field, together with the vertical component of the main magnet assembly in the central axis region, forms a tilted magnetic field. Under the influence of this magnetic field, electrons move along the tilted magnetic field lines, thereby breaking the localized constraint of the main magnet at the center and improving the radial uniformity of the plasma. Furthermore, the auxiliary magnet assembly can rotate around the central axis of the main magnet assembly, eliminating the magnetic spike phenomenon caused by the static DC electromagnet, further improving the circumferential uniformity of the plasma within the processing space.

[0009] In one possible implementation, the auxiliary magnet assembly is located in the area surrounded by the main magnet assembly.

[0010] Because the auxiliary magnet assembly is located in the area surrounding the main magnet assembly, the magnetic field generated by the auxiliary magnet assembly is concentrated in the central region of the main magnet assembly. This allows for improved circumferential uniformity while breaking the plasma density singularity in the central region caused by the electron confinement of the central region with less magnetic field energy.

[0011] In one possible implementation, the first auxiliary magnet structure includes a first permanent magnet, and the second auxiliary magnet structure includes a second permanent magnet.

[0012] When the first and second auxiliary magnet structures are permanent magnets, there is no need to set connecting wires, avoiding issues such as tangling and breakage of connecting wires during the rotation of the auxiliary magnet assembly, thus reducing design complexity. Compared to electromagnets, there is no need to provide additional electrical energy to the first and second auxiliary magnet structures for excitation, and permanent magnets occupy less space than electromagnets, overcoming the space limitations of the large cylindrical or other bulk structures of typical electromagnets.

[0013] In one possible implementation, the first auxiliary magnet structure further includes a first magnetic shielding box, which covers the first permanent magnet, and the first magnetic shielding box has adjustable first openings at both ends along the magnetization direction of the first permanent magnet. And / or, the second auxiliary magnet structure further includes a second magnetic shielding box, which covers the second permanent magnet, and the second magnetic shielding box has adjustable second openings at both ends along the magnetization direction of the second permanent magnet.

[0014] By using a first magnetic shielding box enclosing the first permanent magnet and a second magnetic shielding box enclosing the second permanent magnet, with the opening of the first magnetic shielding box aligned with the magnetization direction of the first permanent magnet and the opening of the second magnetic shielding box facing the magnetization direction, a low-resistance magnetic field path is provided for the permanent magnet. This arrangement of the shielding boxes further controls the directionality of the magnetic field lines. By making the openings of the first and second openings adjustable, the magnetic flux through the magnetic field of the first and second permanent magnets can be adjusted, thereby effectively adjusting the control depth and spatial range of the auxiliary magnet assembly.

[0015] In one possible implementation, the first auxiliary magnet structure further includes a first handle for adjusting the opening degree of the first opening; and / or, the second auxiliary magnet structure further includes a second handle for adjusting the opening degree of the second opening.

[0016] By setting the first and second handles, the opening degree of the first and second magnetic shielding boxes can be manually adjusted, saving costs and avoiding the problem of the shielding box control harness getting tangled during the rotation of the auxiliary magnet assembly.

[0017] In one possible implementation, the first auxiliary magnet structure further includes a first wireless receiving device for receiving a first control signal for controlling and adjusting the opening of the first opening; and / or, the second auxiliary magnet structure further includes a second wireless receiving device for receiving a second control signal for controlling and adjusting the opening of the second opening.

[0018] By using a first wireless receiving device on the first auxiliary magnet structure and a second wireless receiving device on the second auxiliary magnet structure, the opening degree of the first opening can be adjusted when a first control signal is received, and the opening degree of the second opening can be adjusted when a second control signal is received. This avoids the problem of wire harness tangling when the magnetic shielding box opening adjustment control harness rotates during the rotation of the auxiliary magnet assembly, and also improves the efficiency and accuracy of adjusting the opening degree of the first magnetic shielding box and the second magnetic shielding box.

[0019] In one possible implementation, the auxiliary magnet assembly further includes a support member, to which the at least one pair of auxiliary magnet structures are fixed; the support member is used to rotate about the central axis of the main magnet assembly, thereby driving the at least one pair of auxiliary magnet structures to rotate about the central axis of the main magnet assembly. By providing the support member, the auxiliary magnet structures are fixed to the support member, ensuring that when the drive assembly drives the support member to rotate, the auxiliary magnet structures rotate synchronously, improving the synchronization and reliability of the rotation.

[0020] In one possible implementation, the plasma distribution control mechanism further includes a drive assembly, which includes a rotary drive element whose angular velocity is controlled by a control unit. The rotary drive component is connected to the support component and is used to drive the support component to rotate around the central axis of the main magnet assembly. By driving the support component through the rotary drive component in the drive assembly, the drive component simultaneously drives at least one pair of auxiliary magnet structures to rotate around the central axis of the main magnet assembly, improving the rotational synchronization of the auxiliary magnet structures. The control unit here can be a component within the plasma distribution control mechanism, or it can be another device outside the plasma distribution control mechanism, such as a host computer.

[0021] In one possible implementation, the auxiliary magnet assembly includes multiple pairs of auxiliary magnet structures arranged at intervals around the central axis of the main magnet assembly.

[0022] By arranging multiple pairs of auxiliary magnet structures at intervals around the central axis of the main magnet assembly, the resulting magnetic field exhibits better uniformity in the circumferential direction. Furthermore, as the auxiliary magnet assembly rotates, the increasing number of auxiliary magnet structures and the relatively smaller intervals further enhance the circumferential uniformity.

[0023] In one possible implementation, the main magnet assembly includes a plurality of ring-shaped electromagnets nested sequentially from the inside out.

[0024] By setting up multiple ring-shaped electromagnets, the radial plasma density can be more precisely modulated based on the magnetic field formed by the excitation current, the current magnitude, polarity, output mode, and different radius combinations.

[0025] Secondly, this application provides a plasma processing apparatus, including the plasma distribution control mechanism provided in the above embodiments.

[0026] By coordinating the excitation of the main magnet assembly and the auxiliary magnet assembly in the plasma distribution control mechanism, the plasma density inside the plasma processing device can be modulated in the radial and circumferential directions. Furthermore, by adjusting the rotation radius of the auxiliary magnet assembly, the plasma density in different radial and circumferential directions inside the plasma processing device can be locally modulated.

[0027] In one possible implementation, the plasma processing apparatus further includes a first electrode, a second electrode, a gas supply mechanism, a power supply mechanism, and a plasma distribution control mechanism as described in any one of the preceding embodiments.

[0028] The first electrode and the second electrode are positioned opposite each other and spaced apart, forming a processing space between them; a gas supply mechanism supplies gas to the processing space; a power supply mechanism supplies radio frequency electricity to the first electrode and the second electrode to ionize the gas and generate plasma; the plasma distribution control mechanism is positioned opposite the processing space and is used to uniformly distribute the plasma within the processing space.

[0029] By setting the plasma distribution control mechanism relative to the plasma processing space, the magnetic field generated by the plasma distribution control mechanism modulates the density of the plasma inside the processing space in both the radial and circumferential directions, reducing the problem of uneven plasma density distribution caused by radio frequency energy, thereby improving the uniformity of etching. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A cross-sectional view of an plasma processing apparatus provided in an embodiment of this application; Figure 2 A cross-sectional view of a separately excited electromagnetic unit in the processing space in the related technology provided in the embodiments of this application; Figure 3 In the related technologies provided for the embodiments of this application, Figure 1 A cross-sectional view showing that the inner periphery is configured with multiple rod-shaped electromagnets; Figure 4 In the related technologies provided for the embodiments of this application Figure 2 A schematic diagram of a magnetic field formed by a rod-shaped electromagnet in a magnetic field; Figure 5 This is a cross-sectional structural schematic diagram of the plasma distribution control device provided in the embodiments of this application; Figure 6 Provided for the embodiments of this application Figure 5 A top-view schematic diagram of the magnetic field structure when the auxiliary magnet unit rotates; Figure 7 Provided for the embodiments of this application Figure 5 A schematic diagram of the auxiliary magnet assembly in the process; Figure 8 Provided for the embodiments of this application Figure 6 Schematic diagram of the structure of the first auxiliary magnet and the opening adjustment of the first magnetic shielding box; Figure 9A top view of a manually adjustable first magnetic shielding box provided in an embodiment of this application; Figure 10 A top view of a wirelessly controllable first magnetic shielding box provided in an embodiment of this application; Figure 11 This is a schematic diagram of the structure of the main magnet assembly and the auxiliary magnet assembly provided in the embodiments of this application; Figure 12 Provided for the embodiments of this application Figure 11 A schematic diagram of a connection structure between the drive component and the auxiliary magnet component in the image; Figure 13 Provided for the embodiments of this application Figure 11 A schematic diagram of the structure when the transmission component of the drive assembly is a gear transmission assembly; Figure 14 Provided for the embodiments of this application Figure 11 A schematic diagram of the structure when the transmission component of the drive assembly is a belt pulley drive assembly; Figure 15 Provided for the embodiments of this application Figure 5 A top view of the auxiliary magnet structure when there are multiple pairs of auxiliary magnets; Figure 16 Provided for the embodiments of this application Figure 5 A schematic diagram of the structure of the main magnet assembly when it has multiple ring-shaped electromagnets.

[0032] Explanation of reference numerals in the attached figures: 1000-Plasma Processing Device; 100 - First electrode; 101 - Base; 102 - Electrostatic chuck; 200 - Second electrode; 201 - Processing space; 300 - Gas supply mechanism; 301 - Buffer chamber; 302 - Jet nozzle; 303 - Gas pipeline; 304 - External gas source; 400 - Power supply mechanism; 500-Plasma distribution control mechanism; 510 - Main magnet assembly; 511 - Electromagnet; 520 - Auxiliary magnet assembly; 521 - Auxiliary magnet structure; 5211 - First auxiliary magnet structure; 52111 - First permanent magnet; 52112 - First magnetic shielding box; 52112a - First opening; 5212 - Second auxiliary magnet structure; 52121 - Second permanent magnet; 52122 - Second magnetic shielding box; 52122a - Second opening; 5213 - First handle; 5214 - Second handle; 5215 - First wireless receiver; 5216 - Second wireless receiver; 522 - Support component; 530 - Drive assembly; 531 - Rotary drive component; 532 - Transmission assembly; 600 - Main electromagnetic unit; 601 - Main electromagnetic structure; 700 - Auxiliary electromagnetic unit; 701 - Rod-type electromagnet; 10 - Semiconductor wafers; 20-chamber; 30 - Central axis; 40 - Host computer. Detailed Implementation

[0033] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0034] Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] In the description of this application, the terms “center,” “upper,” “lower,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0036] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0037] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly, for example, they can refer to a fixed connection, a detachable connection, or an integral connection. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0038] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0039] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0040] This application provides a plasma processing apparatus 1000, which is mainly used in various plasma processing equipment. For example, it can be used in semiconductor manufacturing such as CCP (Capacitively Coupled Plasma) equipment, CVD (Chemical Vapor Deposition) equipment, PVD (Physical Vapor Deposition) equipment, ICP (Inductively Coupled Plasma) equipment, or plasma resist stripping equipment. It can also be used in surface treatment and modification equipment, such as plasma cleaning equipment, plasma activation equipment, or plasma polymerization equipment. Furthermore, it can be used in, for example, HVPJ (High Velocity Plasma Jetting) equipment or continuous plasma processing equipment. It is understood that the plasma processing apparatus 1000 can also be any of the aforementioned plasma processing equipment.

[0041] This application uses the plasma processing device 1000 as an example for illustration. Figure 1 As shown, the plasma processing device 1000 may include a first electrode 100, a second electrode 200, a gas supply mechanism 300, a power supply mechanism 400, and a plasma distribution control mechanism 500.

[0042] In embodiments of this application, the first electrode 100 and the second electrode 200 are arranged opposite to each other and spaced apart. For example... Figure 1 As shown in the embodiments of this application, the plasma processing apparatus 1000 includes a chamber 20. A first electrode 100 and a second electrode 200 can be disposed within the chamber 20 for accommodating, for example, a semiconductor wafer 10. The first electrode 100 can be disposed at the bottom center position within the chamber 20 for supporting the semiconductor wafer 10. The first electrode 100 can be made of a conductive material such as aluminum alloy or stainless steel. Figure 1As shown in the embodiments of this application, the first electrode 100 includes a base 101 and an electrostatic chuck 102 disposed above the base 101. The base 101 is constructed of conductive materials such as aluminum. The electrostatic chuck 102 can be a disk-shaped structure with one or more electrodes covered by insulating layers inside. After a DC voltage (not shown in the figure) is applied to the electrodes, opposite charges are induced on the back side of the semiconductor wafer 10 and the electrodes, respectively. The positive and negative charges attract each other, thereby causing the electrostatic chuck 102 to generate an adsorption force to attract the semiconductor wafer 10, thus fixing the semiconductor wafer 10. By setting the electrostatic chuck 102, the entire area of ​​the wafer can be fixed, and it is suitable for high vacuum environments. The electrostatic chuck can reduce particulate contamination and also has uniform temperature control capability. It should be noted that in the embodiments of this application, the fixing of the wafer is not limited to the structural form of the electrostatic chuck 102; mechanical clamps or vacuum chucks can also be used to fix the wafer.

[0043] The second electrode 200 is disposed opposite and spaced apart from the first electrode 100 within the chamber 20, such that the first electrode 100 and the second electrode 200 constitute a processing space 201 for processing the semiconductor wafer 10 in this embodiment. In an embodiment of this application, the second electrode 200 is located at the top position within the chamber 20. Exemplarily, the second electrode 200 can be as follows: Figure 1 As shown, the top cover of the aforementioned chamber 20 is covered by a radio frequency energy of, for example, 100 MHz, applied between the first electrode 100 and the second electrode 200. When gas is injected into the processing space 201 via the gas supply mechanism 300, the gas can be, for example, an inert gas or a fluorine-containing gas. Under the excitation of the radio frequency power, the gas molecules ionize to generate plasma. Specifically, the inert gas can be argon, helium, etc. In the radio frequency electric field, electrons gaining kinetic energy collide with the atoms or molecules of the inert gas, forming a chain reaction. Within a short time, the processing space 201 is filled with a large number of electrons, positive ions, and neutral particles, thus forming plasma. The plasma bombards the surface of the semiconductor wafer 10, removing material through physical sputtering. Furthermore, the fluorine-containing gas can be a chemically reactive gas such as carbon tetrafluoride or sulfur hexafluoride. After being collided with by high-energy electrons, the fluorine-containing gas is decomposed into highly reactive free radicals and atoms, while the electrons also ionize with neutral particles, generating ions. After a series of collision reactions, the plasma containing fluorine gas contains various free radicals, ions, and neutral molecules. The free radicals can undergo a violent chemical reaction with silicon, thereby achieving etching of the silicon. In the embodiments of this application, the material of the second electrode can be polycrystalline silicon or silicon-containing silicides, such as silicon carbide, silicon dioxide, etc.; the material of the second electrode can also be a metal material with an anti-corrosion coating, such as anodic aluminum oxide.

[0044] The gas supply mechanism 300 is used to supply gas into the aforementioned processing space 201. It has various structural forms and can be installed independently or combined with other components in the embodiments of this application. For example, such as... Figure 1 As shown, the gas supply mechanism 300 is integrated with the second electrode 200. The gas supply mechanism 300 includes a buffer chamber 301, a jet nozzle 302, and a gas pipeline 303 disposed inside the second electrode 200. One end of the jet nozzle 302 is connected to the buffer chamber 301, and the other end is connected to the processing space 201. The gas pipeline 303 is connected to the buffer chamber 301 and is also connected to an external gas source 304 via a pipeline. Thus, the external gas source 304 injects gas into the buffer chamber 301 through the gas pipeline 303, and then injects it into the processing space 201 in a spray-like manner through multiple jet nozzles 302. Through the above integrated design, the uniformity of the electric field and the uniformity of the gas field distribution can be improved, thereby ensuring the synchronization and uniformity of reactants and energy in space from the source. It is understood that, in the embodiments of this application, in addition to the above-mentioned combination with the second electrode 200, a separate gas supply mechanism 300 can also be configured, for example, a spray head can be separately set in the processing space 201, and the gas can be uniformly sprayed in the processing space 201 through the connection between the spray head and the external gas source.

[0045] The power supply mechanism 400 supplies radio frequency (RF) power to the first electrode 100 and the second electrode 200 to ionize the gas and generate plasma. It should be noted that the specific structural form of the power supply mechanism 400 can be varied; for example, it can be a single-RF power supply or a dual-RF power supply. Taking a single-RF power supply as an example, in the first electrode 100 containing the electrostatic chuck 102, the output terminal of the power supply mechanism can be directly connected to the base 101 of the first electrode 100, while the second electrode is directly grounded. In this case, all the RF power is applied to the electrode carrying the wafer, resulting in high energy and good directionality of ion bombardment. Alternatively, the output terminal of the RF power supply can be connected to the second electrode, while the first electrode is directly grounded. Furthermore, in the embodiments of this application, dual-RF refers to the second electrode being connected to a high-RF power supply and the first electrode being connected to a low-RF power supply. The high-RF power supply is used to control the plasma density, and the low-RF power supply is used to control the plasma bombardment energy, thereby improving the controllability of the applied RF energy. Specifically, as shown... Figure 1 The single radio frequency power supply mechanism 400 shown is electrically connected to the first electrode 100 and the second electrode 200 is grounded. The power supply mechanism 400 provides pulsed radio frequency power with a frequency and duty cycle suitable for processing high-frequency gas discharge, so that a radio frequency electric field is generated between the first electrode 100 and the second electrode 200. The gas is ionized in the radio frequency electric field and plasma is maintained to achieve etching of the surface of the semiconductor wafer 10.

[0046] It is understood that when the plasma processing device 1000 is a device other than a CCP device, the plasma processing device 1000 may not be equipped with at least one of the first electrode 100, the second electrode 200, the gas supply mechanism 300, and the power supply mechanism 400. The following embodiments are based on a CCP device in which the plasma processing device 1000 is equipped with the first electrode 100, the second electrode 200, the gas supply mechanism 300, and the power supply mechanism 400, and are not intended to limit the plasma processing device 1000.

[0047] To more clearly illustrate the solution of this application, the plasma distribution control mechanism 500 in the embodiments of this application will be described in detail in subsequent sections. Figure 2 As shown, to overcome the problem of uneven plasma distribution in the processing space 201, related technologies have installed a main electromagnetic unit 600 that can be individually excited at the top of the chamber 20. The main electromagnetic unit 600 includes multiple coaxial main electromagnetic structures 601 with gradually increasing radii from the inside to the outside. By energizing the multiple main electromagnetic structures 601, a magnetic field for controlling the radial density of the plasma can be formed, such as... Figure 2 As shown, in this magnetic field, magnetic field lines pass through the processing space 201 from the inner main electromagnetic structure 601 in a U-shaped path, and the magnetic field lines pass through the processing space 201 to the outer side in a point-symmetric manner around the central axis. The generation of this magnetic field causes electrons in the plasma to undergo gyratory motion under the Lorentz force and repeatedly collide with gas molecules. This not only increases the number of ionization collisions per unit time, but also partially improves the uniformity of the radial density of the plasma within the processing space 201 by using different combinations and polarities of the various main electromagnetic excitation power supplies.

[0048] Please continue to refer to Figure 2 Due to the separate application of the main electromagnetic unit 600, the horizontal component of the magnetic field emitted from the central region in the processing space 201 is almost zero, while the vertical component reaches its peak. Therefore, as Figure 2 As shown, near the central axis, electron e is subjected to the Lorentz force, causing it to rotate around the central axis while moving vertically. If electron e encounters the processing gas during its movement, it will collide with gas molecules, causing the gas molecules to ionize. In this case, the electron is constrained near the central axis under the influence of the Lorentz force and cannot diffuse outward in the radial direction. This results in an increased number of ionization collisions of gas molecules near the central axis, leading to a maximum plasma density in the central axis region.

[0049] To overcome the problems existing in the separate excitation main electromagnetic unit 600, such as Figure 3As shown, an auxiliary electromagnetic unit 700 can be added at the center of the main electromagnetic unit 600. The auxiliary electromagnetic unit 700 includes at least two point-symmetric rod-shaped electromagnets 701 with opposite polarities. Excitation of the rod-shaped electromagnets 701 forms U-shaped magnetic field lines passing through the central axis, thereby creating a magnetic field with a horizontal component in the central region of the processing space 201. This horizontal component of the magnetic field is combined with the vertical component of the separately excited main electromagnetic unit 600 to form a magnetic field with a tilted component. Figure 3 As shown, electrons move along the magnetic field lines of the tilted magnetic field, causing electrons that were originally confined near the central axis to diffuse in a tilted direction toward the radius under the influence of the tilted magnetic field, thereby making the plasma density uniform in the central region.

[0050] However, while the aforementioned auxiliary electromagnetic unit 700 overcomes the problem of high plasma density in the central region, it inevitably creates a multi-point magnetic flux phenomenon in the circumferential direction. For example... Figure 4 As shown, because the auxiliary electromagnetic unit 700 is excited by a static constant current, regions with larger and smaller magnetic field strengths are formed in the circumferential direction of the rod-shaped electromagnet 701, i.e., a magnetic spool phenomenon is formed. Figure 4 As shown, a region with relatively high magnetic field density and a region with relatively low magnetic field density are formed around the rod-shaped electromagnet 701. Because the rod-shaped electromagnet 701 is arranged in a point configuration, the magnetic field distribution in the circumferential direction is uneven, resulting in a deterioration of the plasma density in the circumferential direction. The plasma distribution control mechanism in the embodiments of this application will be described in detail in the following sections.

[0051] like Figure 5 The diagram shown is a simplified cross-sectional view of the plasma distribution control mechanism 500 in this embodiment, which includes a main magnet assembly 510 and an auxiliary magnet assembly 520. The main magnet assembly 510 is arranged in a ring shape, and its function is to control the radial plasma density distribution in the processing space 201. In this embodiment, the ring structure of the main magnet assembly 510 can adapt to changes in the structural form of the chamber 20 where the processing space 201 is located. Of course, the ring structure of the main magnet assembly 510 can have various forms and is not limited to any particular form. Figure 5 The circular ring shown is an example. Exemplary forms include polygonal rings and elliptical structures. Furthermore, in the embodiments of this application, the main magnet assembly 510 can be implemented using an electromagnet or a permanent magnet. The number of turns in the main magnet assembly 510 is not limited in the embodiments of this application; it can be a single turn or a multi-turn structure.

[0052] Please continue to refer to Figure 5In embodiments of this application, the auxiliary magnet assembly 520 includes at least one pair of auxiliary magnet structures 521. Each pair of auxiliary magnet structures 521 includes a first auxiliary magnet structure 5211 and a second auxiliary magnet structure 5212. The first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 are symmetrically arranged with respect to the central axis of the main magnet assembly 510, and the magnetization directions of the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 are opposite and both are parallel to the central axis of the main magnet assembly 510. It is understood that in some embodiments of this application, the auxiliary magnet assembly 520 can be disposed on the inner periphery of the main magnet assembly 510 or on the outer periphery of the main magnet assembly 510. When the main magnet assembly 510 includes multiple turns of permanent magnets or electromagnets, the auxiliary magnet assembly 520 can also be disposed between two adjacent turns of main magnets or electromagnets in the main magnet assembly 510. Figure 5 As shown in the embodiments of this application, the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 are symmetrically arranged with respect to the central axis of the main magnet assembly 510 and have opposite magnetization directions, thus forming a structure as shown in the figure. Figure 5 The U-shaped magnetic field lines shown pass through the processing space 201, thereby breaking the problem of the central region plasma density singularity formed by the individual excitation of the main magnet assembly 510.

[0053] In embodiments of this application, the auxiliary magnet assembly 520 is rotatable about the central axis of the main magnet assembly 510. It is understood that the rotatability of the auxiliary magnet assembly 520 refers to its ability to rotate. For example, it can be controlled by an external drive of the plasma distribution control mechanism; when the external drive switch is turned on, the auxiliary magnet assembly 520 begins to rotate. Figure 6 As shown, when the auxiliary magnet assembly 520 rotates around the central axis of the main magnet assembly 510, the magnetic field formed by the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 is in motion. This rotation prevents the first and second auxiliary magnet structures 5211 and 5212 from forming static magnetic spikes, meaning they do not have enough time to capture and accumulate a large number of particles in a fixed position, thus effectively suppressing the formation of static magnetic spikes. In the embodiments of this application, the disturbance of the rotating magnetic field continuously "pushes" and "pulls" the plasma at different positions in the circumferential direction, forcing electrons and plasma to move and mix in the circumferential direction, promoting the uniformity of the entire circumferential plasma. Furthermore, in the embodiments of this application, the rotational angular velocity of the auxiliary magnet assembly 520 is directly proportional to the uniformity effect of the circumferential plasma; that is, the faster the rotational angular velocity of the auxiliary magnet assembly 520, the better the uniformity of the plasma.

[0054] In the above embodiments, a magnetic field orthogonal to the central axis 30 of the main magnet assembly 510 is generated by the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212. The horizontal component of this magnetic field and the vertical component of the main magnet assembly 510 in the region of the central axis 30 combine to form an inclined magnetic field. Under the action of this magnetic field, electrons move along the inclined magnetic field lines, thereby breaking the localization constraint of the main magnet at the center when it is individually excited, and improving the radial uniformity of the plasma. Furthermore, by driving the auxiliary magnet assembly 520 to rotate around the central axis 30 of the main magnet assembly 510 through the driving assembly 530, the magnetic spike phenomenon caused by the static DC electromagnet 511 is eliminated, further improving the circumferential uniformity of the plasma in the processing space 201. In some embodiments of this application, such as Figure 5 As shown, the auxiliary magnet assembly 520 is located within the region surrounding the main magnet assembly 510. It is understood that the auxiliary magnet assembly 520 can be an electromagnet, a permanent magnet, or other form of magnet structure, as long as the polarities of the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 are opposite, generating a magnetic field orthogonal to the central axis 30 of the main magnet assembly 510. This can be achieved by rotation, thus improving the radial and circumferential uniformity of the plasma. By placing the auxiliary magnet assembly 520 within the region surrounding the main magnet assembly 510, and closer to the center region of the main magnet assembly 510, the magnetic field energy consumption required to break the electron confinement in the central region formed by the main magnet assembly 510 can be reduced. This concentrates the magnetic field generated by the auxiliary magnet assembly 520 in the central region of the main magnet assembly 510, improving circumferential uniformity while breaking the plasma density singularity in the central region caused by the electron confinement with less magnetic field energy. It is understood that, in the embodiments of this application, the auxiliary magnet assembly 520 can also be disposed outside the area surrounded by the main magnet assembly 510, that is, the auxiliary magnet assembly 520 is arranged in a ring structure on the outside of the main magnet assembly 510. When the auxiliary magnet assembly 520 is disposed outside the main magnet assembly 510, it can still generate a magnetic field orthogonal to the central axis 30 of the main magnet assembly 510, thereby breaking the localization constraint of individually exciting the main magnet at the center, and improving the circumferential uniformity through rotation.

[0055] In some embodiments of this application, the first auxiliary magnet structure 5211 and the second auxiliary magnet structure 5212 may be permanent magnets. For example, the first auxiliary magnet structure 5211 includes a first permanent magnet 52111, and the second auxiliary magnet structure 5212 includes a second permanent magnet 52121. Figure 5 and Figure 6As shown, the first permanent magnet 52111 and the second permanent magnet 52121 are arranged in a centrally symmetrical manner, and their polarities are opposite. By using permanent magnets, on the one hand, there is no need for additional electrical energy to form a magnetic field, and no need for connecting wires, avoiding issues such as tangling and breakage of connecting wires during the rotation of the auxiliary magnet assembly, thus reducing design complexity. On the other hand, because their structural shape reduces space occupation compared to electromagnets, and their shape can be flexibly designed as needed, they offer good benefits in terms of cost and maintenance. It is understood that in some embodiments of this application, the structural form of the permanent magnet includes, but is not limited to, a prism shape, and its cross-section can be circular, polygonal, semi-circular, etc. It can be flexibly selected according to requirements, without being limited by the space constraints of larger cylindrical phases such as rod-shaped electromagnets.

[0056] The embodiments described below are further limitations based on the first auxiliary magnet structure 5211 including a first permanent magnet 52111 and the second auxiliary magnet structure 5212 including a second permanent magnet 52121.

[0057] In the embodiments of this application, such as Figure 7 As shown, the first auxiliary magnet structure 5211 further includes a first magnetic shielding box 52112, which covers the first permanent magnet 52111, and has adjustable openings 52112a at both ends along the magnetization direction of the first permanent magnet 52111. Alternatively, the second auxiliary magnet structure 5212 further includes a second magnetic shielding box 52122, which covers the second permanent magnet 52121, and has adjustable openings 52122a at both ends along the magnetization direction of the second permanent magnet 52121. The magnetic shielding box is used to shield and isolate the magnetic field to reduce the interference of the magnetic field generated by the permanent magnet on the surrounding environment. The magnetic shielding box is made of materials with high magnetic permeability, including but not limited to iron, nickel alloy, and silicon steel plate. By creating openings in the magnetic shielding box, the magnetic induction lines generated by the permanent magnets are emitted only from these openings. This allows for precise control of the direction of the magnetic field generated by the auxiliary magnet assembly 520. By making the openings of the first opening 52112a and the second opening 52122a adjustable, the magnetic flux passing through the magnetic field of the first permanent magnet 52111 and the second permanent magnet 52121 can be adjusted, thereby effectively adjusting the control depth and spatial range of the auxiliary magnet assembly 520. It is understood that, in embodiments of this application, a first magnetic shielding box 52112 can be simultaneously provided outside the first permanent magnet 52111, and a second magnetic shielding box 52122 can be provided outside the second permanent magnet 52121 to enhance the adjustment effect of the magnetic flux.

[0058] In the embodiments of this application, the first magnetic shielding box 52112 and the second magnetic shielding box 52122 are used to shield the magnetic flux of the first permanent magnet 52111 and the permanent magnet in the non-magnetized direction, respectively, to reduce the restriction of magnetic field lines that do not play a role in suppressing electronic confinement in the central region by the first permanent magnet 52111 and the second permanent magnet 52121. By setting the magnetic shielding box, the control accuracy of suppressing electronic confinement in the central region can be improved, and the influence on the radial control magnetic field formed by the main magnet assembly 510 can be reduced. In the embodiments of this application, the first magnetic shielding box 52112 and the second magnetic shielding box 52122 have various structural forms. For example, in the embodiments of this application, the first magnetic shielding box 52112 and the second magnetic shielding box 52122 can respectively cover the first permanent magnet 52111 and the second permanent magnet 52121, or the first magnetic shielding box 52112 and the second magnetic shielding box 52122 can be set as an integral structure. By setting the first opening 52112a and the second opening 52122a, the magnetic field lines pass through only in the direction of magnetization. Furthermore, by adjusting the size of the openings of the first opening 52112a and the second opening 52122a, the magnetic flux is further adjusted to improve the range and depth of suppressing the modulation of the plasma density singularity in the central axis region caused by the electronic confinement in the central region.

[0059] In the embodiments of this application, the adjustment methods for the first opening 52112a and the second opening 52122a can take various forms. For example, they can be adjusted manually or wirelessly via a motor, as will be described in detail below. Furthermore, in the embodiments of this application, the specific forms of opening adjustment also include various methods. For instance, it can be achieved by moving a baffle that covers the opening, or by other structural forms. For example, such as... Figure 8 As shown, the baffle can be moved by stretching and translating from the center to the edge, or by moving laterally or rotating along the plane of the opening.

[0060] In some embodiments of this application, such as Figure 9 As shown, the first auxiliary magnet structure 5211 further includes a first handle 5213, which is used to adjust the opening degree of the first opening 52112a; or, the second auxiliary magnet structure 5212 further includes a second handle 5214, which is used to adjust the opening degree of the second opening 52122a. In the embodiments of this application, the first handle 5213 and the second handle 5214 can take various forms, and the corresponding handles can be configured according to the opening degree adjustment method of the first opening 52112a and the second opening 52122a described above. Figure 9The handle shown could also be a handwheel or a wrench for manual adjustment of the opening. In practice, the opening can be adjusted using a single handle or by using multiple handles in tandem. Manually adjusting the first opening 52112a using a handle avoids external wiring, preventing issues like wire tangling or breakage, thus reducing design complexity, saving costs, and minimizing interference. In some embodiments of this application, a first handle 5213 for adjusting the opening of the first opening 52112a and a second handle 5214 for adjusting the opening of the second opening 52122a can be simultaneously provided to improve adjustment accuracy.

[0061] In other embodiments of this application, such as Figure 10As shown, the first auxiliary magnet structure 5211 further includes a first wireless receiver 5215, which receives a first control signal to control the adjustment of the opening of the first opening 52112a; or, the second auxiliary magnet structure 5212 further includes a second wireless receiver 5216, which receives a second control signal to control the adjustment of the opening of the second opening 52122a. In the embodiments of this application, the adjustment of the opening size of the first opening 52112a and the second opening 52122a is achieved through wireless control. Taking the first wireless receiver 5215 as an example, the first wireless receiver can be implemented using a device based on wireless communication protocols such as Bluetooth, Wi-Fi, or ZigBee, or it can receive the first control signal through a radio frequency identification (RFID) tag and adjust the opening size of the first opening 52112a through an electric component such as a motor. Specifically, when using Bluetooth communication, a Bluetooth module, such as the HC-08 or NRF52832 series module supporting Bluetooth Low Energy, can be integrated into the first wireless receiver 5215 of the first magnetic shielding box 52112. An application on a mobile terminal establishes a serial communication link with the Bluetooth module, allowing operation via the application, such as dragging a slider or inputting a specific opening value. Upon receiving the command, the main control module of the first wireless receiver 5215 controls the number of forward or reverse rotations of the motor. The motor rotates, driving the valve plate until the set opening degree is reached and then stops. Alternatively, the Bluetooth module can be replaced with a Wi-Fi module, such as the ESP8266 or ESP32. The RFID module can be an RFID reader, for example, based on the MFRC522 chip, installed on the magnetic shielding box, which can bind different RFID tags according to different opening degree commands. When the opening needs to be adjusted, the RFID tag corresponding to the opening is brought close to the reader. After the RFID tag reads the unique ID number, it sends it to the main control module of the first wireless receiver 5215. The main control module searches for the opening command corresponding to the ID based on the data stored internally. After finding a match, it drives the motor to run to the preset opening. It can be understood that in the embodiments of this application, a wireless receiver 5215 can also be set on the first auxiliary magnet structure 5211 and a second wireless receiver 5216 can be set on the second auxiliary magnet structure 5212 to improve the efficiency of wireless control. By setting the first wireless receiver 5215 and the second wireless receiver 5216, not only can the adjustment efficiency be improved, but also the technical obstacles such as wire entanglement caused by the rotation of the auxiliary magnet structure 521 can be overcome.

[0062] In the embodiments of this application, such as Figure 5 , Figure 7 and Figure 11 As shown, the auxiliary magnet assembly 520 may include a support member 522, and at least one pair of auxiliary magnet structures 521 are fixed to the support member 522. In embodiments of this application, a first permanent magnet 52111 and a second permanent magnet 52121 may be fixed to the support member 522, or a combination of the first permanent magnet 52111, the first magnetic shielding box 52112, the second permanent magnet 52121, and the second magnetic shielding box 52122 may be fixed to the support member 522. In embodiments of this application, the support member 522 may have various structural forms, such as... Figure 5 and Figure 7 The disk-shaped structure shown can also be as follows: Figure 11 The hollow ring structure shown is illustrated. The support member 522 has various rotatable connections, which can be achieved through bearings, balls, or even a ring track. The support member 522 is used to rotate about the central axis of the main magnet assembly 510, thereby driving at least one pair of auxiliary magnet structures 521 to rotate about the central axis of the main magnet assembly 510.

[0063] The support member 522 enables the auxiliary magnet structure 521 to rotate synchronously with the rotation of the support member 522, improving the reliability and synchronicity of the rotation. It should be noted that, in the embodiments of this application, the support member 522 may be omitted, and an external drive may be used to directly drive the auxiliary magnet structure 521 to rotate circumferentially around the central axis of the main magnet assembly 510. The following embodiments of this application will be described with a structure having the support member 522.

[0064] In embodiments of this application, the plasma distribution control mechanism further includes a drive assembly 530, which includes a rotation drive member 531. The angular velocity of the rotation drive member 531 is controlled by a control unit. It should be noted that the control unit can be a component within the plasma distribution control mechanism, or it can be... Figure 12 The host computer 40 shown is located outside the plasma distribution control mechanism. The rotary drive component 531 includes, but is not limited to, a motor or pneumatic motor. In specific driving operations, such as... Figure 12As shown, the rotary drive 531 can be directly connected to the center of the support component 522 to directly drive the support component 522. Alternatively, a transmission rod can be provided on the support component 522, and the rotation of the support component 522 can be achieved through the connection between the rotary drive 531 and the transmission rod. By setting the support component 522, the auxiliary magnet structure 521 is fixed to the support component 522, so that when the drive assembly 530 drives the support component 522 to rotate, the auxiliary magnet structure 521 rotates synchronously. Fixing the auxiliary magnet structure 521 to the support component 522 also helps improve the rotational stability of the auxiliary magnet assembly 520. Furthermore, in the embodiments of this application, the control unit controls the rotary drive 531 to rotate at a suitable angular velocity. The angular velocity at which the rotary drive 531 drives the support component 522 to rotate is proportional to the radial and circumferential plasma uniformity. Of course, the connection between the rotary drive member 531 and the support member 522 can also be a transmission connection. For example, the connection between the rotary drive member 531 and the support member 522 can also be achieved by providing a transmission assembly 532 to drive the support member 522. In the following embodiments of this application, the method of connecting the rotary drive member 531 and the support member 522 through a transmission assembly 532 will be described. In some embodiments of this application, such as... Figure 13 As shown, the transmission component 532 can be a gear drive. The gear drive connects to the gear via a rotary drive component 531, and the gear meshes with the support component 522. The rotary drive component 531 drives the gear to rotate, and the rotation of the gear drives the rotation of the support component 522. By using gears, the transmission ratio can be rationally set to reduce, for example, the operating speed of the motor, thereby improving transmission efficiency and reducing energy loss. Furthermore, the gear configuration allows for a compact structure and flexible placement of, for example, the motor position, to adapt to different spaces and working conditions.

[0065] In other embodiments of this application, such as Figure 14 As shown, the transmission assembly 532 can also be a belt drive, that is, the support component 522 and the belt pulley are connected by a belt pulley, and the rotation drive component 531 is connected to the belt pulley to drive the rotation of the belt pulley, and the belt drives the support component 522 to rotate. Alternatively, in the embodiments of this application, the transmission assembly 532 can also include a sprocket drive assembly, that is, the rotation drive component 531 drives the sprocket to rotate, and the sprocket is connected to the support component 522 by a chain, thereby realizing the rotation of the support component 522. By setting the transmission assembly 532 as one of a gear drive assembly, a belt drive assembly, or a sprocket drive assembly, the transmission ratio can be set as needed to improve transmission efficiency, reduce noise, and reduce energy loss.

[0066] In some embodiments of this application, the auxiliary magnet assembly 520 may include multiple pairs of auxiliary magnet structures 521, which are spaced apart around the central axis of the main magnet assembly 510. For example, Figure 15 As shown, the auxiliary magnet structure 521 has three pairs, which are evenly spaced along the circumferential direction. It can be understood that four or more pairs of auxiliary magnet structures 521 can be set according to actual needs. By setting multiple pairs of auxiliary magnet structures 521, the uniformity of the magnetic field of the auxiliary magnet structure 521 passing through the central axis 30 can be improved, thereby further enhancing the circumferential uniformity.

[0067] In the embodiments of this application, such as Figure 16 As shown, the main magnet assembly 510 includes multiple ring-shaped electromagnets 511 nested sequentially from the inside out. In specific implementations, by adjusting the current magnitude, polarity, output mode (AC or DC, continuous or intermittent), or different radii of any one or more ring-shaped electromagnets 511, a magnetic field can be formed to adjust the radial plasma density to varying degrees, further improving the uniformity of radial plasma density control. It is understood that in the embodiments of this application, each ring-shaped electromagnet 511 can be a structure arranged continuously in the circumferential direction; or it can be arranged in a spaced-out manner in the circumferential direction, i.e., a structure with spaced-out arc segments in the circumferential direction. For example, each ring-shaped electromagnet 511 can be a structure evenly spaced on the circumference or a continuous ring structure. Multiple ring-shaped electromagnets 511 can also adopt a combination of the above-mentioned spaced and continuous structures. For example, two adjacent ring-shaped electromagnets 511 can have one being a continuous ring structure and the other being spaced-out along the circumferential direction.

[0068] In embodiments of this application, a plasma processing apparatus 1000 including the aforementioned plasma distribution control mechanism 500 is also provided. For example, the radius or position of the auxiliary magnet assembly 520 can be adjusted according to different wafer sizes or different location requirements, and through cooperative operation with the main magnet assembly 510, local modulation of radial or circumferential plasma density at different locations can be achieved.

Claims

1. A plasma distribution control mechanism, characterized in that, include: The main magnet assembly is distributed along a ring shape; An auxiliary magnet assembly includes at least one pair of auxiliary magnet structures, each pair of auxiliary magnet structures including a first auxiliary magnet structure and a second auxiliary magnet structure. The first and second auxiliary magnet structures are symmetrically arranged with respect to the central axis of the main magnet assembly, and the magnetization directions of the first and second auxiliary magnet structures are opposite and both are parallel to the central axis of the main magnet assembly. The auxiliary magnet assembly is rotatable about the central axis of the main magnet assembly.

2. The plasma distribution control mechanism according to claim 1, characterized in that, The auxiliary magnet assembly is located in the area surrounded by the main magnet assembly.

3. The plasma distribution control mechanism according to claim 1 or 2, characterized in that, The first auxiliary magnet structure includes a first permanent magnet, and the second auxiliary magnet structure includes a second permanent magnet.

4. The plasma distribution control mechanism according to claim 3, characterized in that, The first auxiliary magnet structure also includes a first magnetic shielding box, which covers the first permanent magnet and has adjustable openings at both ends along the magnetization direction of the first permanent magnet. And / or, the second auxiliary magnet structure further includes a second magnetic shielding box, which is disposed outside the second permanent magnet, and the second magnetic shielding box has a second opening with adjustable opening at both ends along the magnetization direction of the second permanent magnet.

5. The plasma distribution control mechanism according to claim 4, characterized in that, The first auxiliary magnet structure also includes a first handle, which is used to adjust the opening of the first opening; And / or, the second auxiliary magnet structure further includes a second handle for adjusting the opening of the second opening.

6. The plasma distribution control mechanism according to claim 4, characterized in that, The first auxiliary magnet structure further includes a first wireless receiving device, which is used to receive a first control signal, and the first control signal is used to control and adjust the opening of the first opening. And / or, the second auxiliary magnet structure further includes a second wireless receiving device for receiving a second control signal for controlling and adjusting the opening of the second opening.

7. The plasma distribution control mechanism according to any one of claims 1 to 6, characterized in that, The auxiliary magnet assembly further includes a support component, and the at least one pair of auxiliary magnet structures are fixed to the support component; The support member is used to rotate about the central axis of the main magnet assembly, so as to drive the at least one pair of auxiliary magnet structures to rotate about the central axis of the main magnet assembly.

8. The plasma distribution control mechanism according to claim 7, characterized in that, The plasma distribution control mechanism further includes a drive assembly, which includes a rotary drive component whose angular velocity is controlled by a control unit. The rotary drive is connected to the support component and is used to drive the support component to rotate around the central axis of the main magnet assembly.

9. The plasma distribution control mechanism according to any one of claims 1 to 8, characterized in that, The auxiliary magnet assembly includes multiple pairs of auxiliary magnet structures, which are arranged at intervals around the central axis of the main magnet assembly.

10. The plasma distribution control mechanism according to any one of claims 1 to 9, characterized in that, The main magnet assembly includes multiple ring-shaped electromagnets nested from the inside out.

11. A plasma processing apparatus, characterized in that, Includes the plasma distribution control mechanism as described in any one of claims 1 to 10.

12. The plasma processing apparatus according to claim 11, characterized in that, Also includes: A first electrode and a second electrode are arranged opposite to and spaced apart, with a processing space formed between the first electrode and the second electrode; A gas supply mechanism for supplying gas to the processing space; A power supply mechanism is used to supply radio frequency electricity to the first electrode and the second electrode to ionize the gas and generate plasma; The plasma distribution control mechanism is opposite to the processing space and is used to make the plasma uniformly distributed in the processing space.

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