Ultra-wideband multifunctional transceiver assembly

Abstract

The invention, which belongs to the electronic countermeasure field, discloses an ultra-wideband multifunctional transmit-receive assembly comprising a main frame, a transmit-receive control main circuit, a power amplification circuit, a receiving circuit, a switch circuit, a coupling circuit and an energy storage capacitor. The main frame adopts a laser seal welding airtight structure and is internally provided with a metal separation cavity, so that the electromagnetic shielding and heat management capabilities are improved. The assembly supports continuous wave and pulse wave emission, has detection and reconnaissance receiving functions, works in an L frequency band, has the bandwidth exceeding three octaves, and integrates numerical control phase shift, numerical control attenuation, numerical control delay, filtering and coupling functions. A thin film and thick film mixed integration process is adopted, and micro-assembly, gold wire bonding and multi-stage sintering technologies are combined, so that high-density integration is realized. The energy storage capacitor is welded to a power supply inlet of the control circuit, instantaneous current support is provided, and voltage stability during pulse emission and mode switching is ensured. The invention has the advantages of high transmitting power, low receiving noise, high switching speed, high reliability and the like.

Description

Technical Field

[0001] This invention relates to an ultra-wideband multi-functional transceiver component in the field of electronic countermeasures, which realizes digitally controlled phase shifting, digitally controlled attenuation, digitally controlled delay, coupling, filtering, transmit / receive switching, and pulse / continuous wave operating mode switching. This invention has advantages such as high transmit output power, low receive noise figure, fast transmit / receive switching speed, multiple RF conditioning functions, and high operational reliability, meeting the application requirements of L-band ultra-wideband transceiver systems. Background Technology

[0002] With the development of military communication technology, high-power transceiver technology is receiving increasing attention. Phased array technology is currently an important development direction for related technologies. Transceiver components are one of the core components of a phased array, characterized by their large number, small size, and complex functions. Transceiver components with wide operating frequency bandwidth, high transmit output power, low receive noise figure, fast transmit / receive switching speed, and high functional integration are urgently needed. Summary of the Invention

[0003] Based on the aforementioned constraints, the technical problem to be solved by this invention is to provide an ultra-wideband multi-functional transceiver component with high transmit and receive performance and multiple functions. This invention has advantages such as high transmit output power, low receive noise figure, fast transmit / receive switching speed, multiple RF conditioning functions, and high operational reliability.

[0004] The objective of this invention is achieved as follows: An ultra-wideband multi-functional transceiver component includes a main frame 1, a transceiver control main circuit 2, a power amplifier circuit 3, a receiving circuit 4, a switching circuit 5, a coupling circuit 6, and an energy storage capacitor 7. The main frame 1 consists of a main housing 1.1, multiple connectors 1.2, and a cover plate 1.3. The transceiver control main circuit 2 is directly connected to the connectors 1.2 of the main frame to realize the transmission and reception of radio frequency signals. The bidirectional port of the transceiver control main circuit 2 is connected to the outside, and its output is connected to the power amplifier 3 and the receiving circuit 4. The output of the power amplifier 3 is connected to the input of the switching circuit 5. The input of the receiving circuit 4 is connected to the output of the switching circuit 5. The bidirectional port of the switching circuit 5 is connected to the coupling circuit 6. The energy storage capacitor 7 is connected to the transceiver control main circuit to release instantaneous current.

[0005] Furthermore, the main housing 1.1 and the cover plate 1.3 are sealed by laser welding, and the main housing 1.1 and the connector 1.2 are fixed by solder sintering or adhesive sealing to achieve the internal airtightness of the main frame 1.

[0006] Furthermore, the main transceiver control circuit 2 includes a common amplitude-phase delay filter circuit 2.1, a transceiver switching circuit 2.2, and a component control circuit 2.3. The component control circuit 2.3 drives and converts external power supply and control signals into power supply, control, and drive signals that can be directly used by the common amplitude-phase delay filter circuit 2.1 and the transceiver switching circuit 2.2, thereby realizing amplitude-phase delay filtering, amplification, transceiver switching, and component control functions.

[0007] Furthermore, the power amplifier circuit 3 includes a driver amplifier 3.1 and a power amplifier 3.2. The transmitted signal is first amplified to medium power by the driver amplifier 3.1, and then enters the power amplifier 3.2, where it is amplified to the required high-power signal. The power amplifier 3.2 can operate in both continuous wave and pulse wave modes. The pulse wave mode increases both output power and power gain by at least 4dB compared to the continuous wave mode. The driver amplifier 3.1 is surface-mounted on the printed circuit board, and the power amplifier 3.2 is sintered onto the main housing 1.1.

[0008] Furthermore, the receiving circuit 4 includes a limiter 4.1 and a low-noise amplifier 4.2. The received signal first passes through the limiter 4.1 and then enters the low-noise amplifier 4.2 to prevent excessively strong signals from entering the low-noise amplifier and causing damage, and to perform low-noise amplification. The low-noise amplifier 4.2 is mounted on the main housing 1.1 by a carrier through a sintering method.

[0009] Furthermore, the switching circuit 5 includes a diode ceramic chip 5.1 and a switching bias circuit 5.2. The switching bias circuit 5.2 provides bias power to the diode ceramic chip 5.1, enabling it to switch between receiving and transmitting states at a speed of less than 1µs. Both the diode ceramic chip 5.1 and the switching bias circuit 5.2 are mounted on the main housing 1.1 by sintering.

[0010] Furthermore, the main transceiver control circuit 2, as the main circuit of the component, is connected to the power amplifier circuit 3, the receiving circuit 4, the coupling circuit 6, and the energy storage capacitor 7 through cable welding, copper foil bonding, or gold wire / gold strip bonding, etc., to realize the connection between radio frequency signals and control signals; the switching circuit 5 is connected to the power amplifier circuit 3 and the receiving circuit 4 through gold wire or gold strip bonding, to realize the switching between the power amplifier and the receiving circuit; the main frame 1 has a cavity inside, which separates the main transceiver control circuit 2, the power amplifier circuit 3, the receiving circuit 4, the switching circuit 5, the coupling circuit 6, and the energy storage capacitor 7 through the metal cavity; After the transmitter chip enters the transceiver assembly, it first enters the common amplitude and phase delay filter circuit 2.1 for amplitude and phase delay control and bandpass filtering. Then, it is switched to the power amplifier circuit 3 through the transceiver switching circuit 2.2 to amplify the signal to the required power signal before entering the switching circuit 5. After passing through the coupling circuit 6, the power is output, and at the same time, the small signal is coupled out. Received signal path: First, it passes through the coupling circuit 6, then through the switching circuit 5 to the receiving circuit 4. After amplitude limiting and low-noise amplification, it enters the transmit / receive switching circuit 2.2, and finally enters the common amplitude and phase delay filter circuit 2.1 for amplitude and phase delay control and bandpass filtering. The output is then the desired received signal.

[0011] Compared with the prior art, the present invention has the following advantages: This invention utilizes a hybrid thin-film and thick-film integration process, as well as micro-assembly, electrical assembly, and sintering processes with multiple temperature gradients. Through the application of novel processes, it enables the assembly of multi-functional devices and improves the assemblability and integration of transceiver components.

[0012] This invention uses a multilayer printed circuit board and a multifunctional chip. Through BGA mounting and interconnect holes, it completes the conditioning and transmission functions of various radio frequency signals and the transmission functions of a large number of control signals, which greatly improves the integration of the transceiver components.

[0013] This invention uses bare chip / carrier board and hermetic frame, which can improve the output power, working efficiency and working reliability of the transmission path, as well as optimize the noise figure and output flatness of the receiving path. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the component of the present invention. Figure 2 This is a schematic diagram of the internal circuit layout of the component of the present invention. Figure 3 This is a schematic diagram of the component packaging state of the present invention. In the diagram: 1-Main frame, 1.1-Main housing, 1.2-Connector, 1.3-Cover plate, 2-Transceiver control main circuit, 2.1-Common amplitude and phase delay filter circuit, 2.2-Transceiver switching circuit, 2.3-Component control circuit, 3-Power amplifier circuit, 3.1-Driver amplifier, 3.2-Power amplifier, 4-Receiver circuit, 4.1-Limiter, 4.2-Low noise amplifier, 5-Switching circuit, 5.1-Diode ceramic plate, 5.2-Switching bias circuit, 6-Coupling circuit, 7-Energy storage capacitor. Detailed Implementation

[0015] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments and accompanying drawings. The illustrative embodiments and descriptions of this invention are for explaining the invention only and are not intended to limit the invention. This invention is already in practical use.

[0016] An ultra-wideband multi-functional transceiver module includes a main frame 1, a main transceiver control circuit 2, a power amplifier circuit 3, a receiving circuit 4, a switching circuit 5, a coupling circuit 6, and an energy storage capacitor 7. This module supports both continuous wave and pulse wave transmission modes and has detection and reconnaissance reception functions. It operates in the L-band with a bandwidth greater than three octaves. The structure and working principle of each part are described in detail below with reference to the accompanying drawings: 1. Main Frame 1 The main frame 1 consists of a main housing 1.1, multiple connectors 1.2, and a cover plate 1.3. The main housing 1.1 is made of a high thermal conductivity metal material and has multiple metal partitions inside to separate the functional circuits into independent cavities, thereby achieving good electromagnetic shielding and thermal isolation. The cover plate 1.3 and the main housing 1.1 are hermetically sealed using laser welding technology; the connectors 1.2 are fixed to the main housing by solder sintering or adhesive sealing processes, ensuring the sealing and reliability of the entire component in harsh environments and meeting the hermetically tight requirements of the internal thin-film / thick-film hybrid integrated circuits.

[0017] 2. Transceiver Control Main Circuit 2 – Core of System Control and Signal Conditioning The circuit includes a common amplitude and phase delay filter circuit 2.1, a transmit / receive switching circuit 2.2, and a component control circuit 2.3.

[0018] The common amplitude and phase delay filter circuit 2.1 employs a highly integrated multi-functional chip (such as an MMIC) to achieve digitally controlled attenuation, digitally controlled phase shift, digitally controlled delay, and bandpass filtering functions within a single package. This chip is soldered onto a multilayer laminated RF printed circuit board via a BGA package and supports bidirectional signal processing, enabling both pre-correction and filtering of the transmitted signal, as well as phase compensation and frequency band selection of the received signal.

[0019] The transmit / receive switching circuit 2.2 is composed of a high-speed RF switch and is controlled by the component control circuit to achieve rapid switching between the transmit and receive paths. The switching time is less than 1 microsecond, which meets the requirements of pulse operation.

[0020] Component Control Circuit 2.3 is designed based on FPGA or dedicated control chip. It receives externally provided TTL or LVDS control commands and DC power supply. After level conversion and driving, it generates the bias voltage, digital control code, and switching timing signals required by each functional unit. This circuit also has status monitoring and fault reporting functions.

[0021] The positive and negative terminals of the energy storage capacitor 7 are directly soldered to the power input pad of the component control circuit 2.3. The external DC power supply first charges the energy storage capacitor; during the transmission pulse or when the power circuit instantaneously requires a large current, the energy storage capacitor provides instantaneous energy, significantly reducing the transient voltage drop of the power network and ensuring the stability of the control signal and consistency with the power output.

[0022] 3. Power Amplifier Circuit 3 – High-Power Transmit Link The circuit employs a two-stage amplification structure: a driver amplifier 3.1 and a power amplifier 3.2. After the transmit signal is output from the transmit / receive switching circuit 2.2, it first enters the driver amplifier 3.1, which uses surface-mount transistors with a gain of approximately 15dB, amplifying the signal to medium power (approximately 27dBm). The signal then passes through an impedance matching network to the power amplifier 3.2, which uses GaN or LDMOS bare chips, sintered onto a molybdenum-copper carrier with gold solder, and directly mounted in the main housing 1.1 for optimized heat dissipation. The power amplifier achieves a gain of over 20dB, an output power exceeding 50dBm (hundred watts), and an efficiency higher than 50%. An isolator and a monitoring coupler are provided between the two amplifier stages to improve matching and monitor forward power.

[0023] 4. Receiver Circuit 4 – High-Sensitivity Receiver Link The receiving circuit includes a limiter 4.1 and a low-noise amplifier 4.2. After passing through coupling circuit 6 and switching circuit 5, the received signal first enters the limiter 4.1. This limiter uses a PIN diode chip sintered on a ceramic substrate, capable of withstanding instantaneous power of at least 50dBm, limiting the input signal to a safe level and protecting the subsequent low-noise amplifier. The low-noise amplifier 4.2 uses a low-noise GaAs or GaN thin-film chip, connected to the carrier via gold ribbon bonding and sintered on the surface of the main housing 1.2. It has a noise figure below 3.0dB and a gain of approximately 25dB. The in-band flatness of the receiving link is better than ±1.0dB.

[0024] 5. Switching Circuit 5 – Transmit / Receive State Switching Execution Unit The switching circuit consists of a ceramic diode chip 5.1 and a switching bias circuit 5.2. The ceramic diode chip 5.1 integrates multiple PIN diode chips, sintered onto an AlN ceramic substrate using gold-tin eutectic solder to form a reflective single-pole double-throw (SPDT) switch structure, featuring high isolation (>40dB), low insertion loss (<1.0dB), and fast switching speed (<1µs). The switching bias circuit 5.2 provides an adjustable negative bias voltage to control the on / off state of the diodes, enabling switching between transmit and receive paths. The bias circuit is optimized to maintain stable switching characteristics and power capacity over an ultra-wideband range.

[0025] 6. Coupling Circuit 6 – Power Coupling and Signal Sampling The coupling circuit employs a microstrip directional coupler structure, printed on a high-frequency laminate, with a coupling degree of approximately 30dB and a directivity greater than 20dB. In transmit mode, the main path transmits a high-power signal to the antenna, while the coupled end outputs a low-power sample signal for power monitoring and closed-loop control. In receive mode, the received signal enters the switching circuit via the coupler's main path. The coupler features high power capacity and low insertion loss.

[0026] 7. Energy Storage Capacitor 7 – Energy Buffer and Transient Support The energy storage capacitor is a low-ESR aluminum electrolytic capacitor with a withstand voltage twice the operating voltage, and is directly soldered to the power input of the transceiver control main circuit 2. Its function is to provide a large current output in the hundreds of microseconds during pulse transmission or mode switching, avoiding voltage drops caused by power supply response delay, and ensuring stable operation of the power amplifier and control circuit under transient conditions.

[0027] 8. System working principle and signal flow Launch operating mode: The external radio frequency signal is input to the common amplitude and phase delay filter circuit 2.1 via connector 1.2. According to beam control commands, it undergoes digital amplitude weighting, phase shifting, and delay adjustment, and out-of-band spurious signals are filtered out. The processed signal is switched to the transmit channel via the transmit / receive switching circuit 2.2, and then amplified sequentially by the driver amplifier 3.1 and the power amplifier 3.2. The amplified high-power signal enters the coupling circuit 6 via the switching circuit 5 (currently in transmit-on state). Most of the power is output to the antenna via the main path, and a small portion is output from the coupling end for real-time monitoring. The component control circuit 2.3 synchronously controls each numerical control unit and performs closed-loop amplitude and phase correction based on the monitoring results.

[0028] Receive working mode: The weak signal received by the antenna enters the switching circuit 5 (switching to receiving mode at this time) through the main path of the coupling circuit 6, and then enters the receiving circuit 4. It first undergoes large signal protection by the limiter 4.1, and then preliminary amplification by the low-noise amplifier 4.2. The amplified signal then enters the common amplitude and phase delay filter circuit 2.1 through the transmit / receive switching circuit 2.2, where it undergoes digitally controlled attenuation, phase compensation, and filtering, and is finally output to the subsequent processing unit. The receiving link supports gain control, which can adaptively adjust the attenuation amount according to the signal strength, improving the dynamic range.

[0029] Mode switching and synchronization control: The component control circuit 2.3, based on external commands, completes the switching of transmit and receive states within microseconds and synchronously adjusts the operating parameters of each CNC unit. The energy storage capacitor 7 provides necessary current support during switching to prevent control voltage fluctuations. A metal cavity and a well-designed grounding system ensure isolation between the transmit and receive links better than 50dB, effectively suppressing self-oscillation and stray emissions.

[0030] 9. Process and Integration Specifications The component employs a hybrid thin-film and thick-film integration process, combining advanced techniques such as micro-assembly, gold wire bonding, and multi-temperature gradient sintering to integrate bare chips, ceramic substrates, multilayer printed circuit boards, and discrete components within a hermetically sealed metal housing. This results in a high-density, high-reliability, and multifunctional ultra-wideband transceiver component. All RF interconnects utilize gold-plated transmission lines and gold wire / ribbon bonding to minimize RF losses and parasitic effects.

[0031] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention in any way. Any simple modifications, alterations, or equivalent structural changes made to the above embodiments based on the technical essence of the present invention and within the scope of professional knowledge shall fall within the protection scope of the present invention.

Claims

1. An ultra-wideband multi-functional transceiver component, characterized in that: It includes a main frame (1), a transceiver control main circuit (2), a power amplifier circuit (3), a receiving circuit (4), a switching circuit (5), a coupling circuit (6), and an energy storage capacitor (7). The main frame (1) consists of a main box (1.1), multiple connectors (1.2) and a cover plate (1.3); the transceiver control main circuit (2) is directly connected to the connector (1.2) of the main frame to realize the transmission and reception of radio frequency signals; the bidirectional port of the transceiver control main circuit (2) is connected to the outside, and its output end is connected to the power amplifier (3) and the output end is connected to the receiving circuit (4); the output end of the power amplifier (3) is connected to the input end of the switching circuit (5); the input end of the receiving circuit (4) is connected to the output end of the switching circuit (5); the bidirectional port of the switching circuit (5) is connected to the coupling circuit (6); the energy storage capacitor (7) is connected to the transceiver control main circuit to release instantaneous current.

2. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The main body (1.1) and the cover plate (1.3) are sealed by laser welding, and the main body (1.1) and the connector (1.2) are fixed by solder sintering or glue sealing to achieve the internal airtightness of the main frame (1).

3. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The main control circuit (2) includes a common amplitude and phase delay filter circuit (2.1), a transmit / receive switching circuit (2.2), and a component control circuit (2.3). The component control circuit (2.3) drives and converts external power supply and control signals into power supply, control, and drive signals that can be directly used by the common amplitude and phase delay filter circuit (2.1) and the transmit / receive switching circuit (2.2), thereby realizing amplitude and phase delay filtering, amplification, transmit / receive switching, and component control functions.

4. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The power amplifier circuit (3) includes a driver amplifier (3.1) and a power amplifier (3.2). The transmitted signal is first amplified to medium power by the driver amplifier (3.1) and then enters the power amplifier (3.2) to be amplified to the required high power signal. The power amplifier (3.2) can operate in two modes: continuous wave and pulse wave. The output power and power gain of the pulse wave mode are increased by at least 4dB compared with the continuous wave mode. The driver amplifier (3.1) is mounted on the printed circuit board by surface mounting, and the power amplifier (3.2) is mounted on the main housing (1.1) by sintering.

5. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The receiving circuit (4) includes a limiter (4.1) and a low-noise amplifier (4.2). The received signal first passes through the limiter (4.1) and then enters the low-noise amplifier (4.2) to prevent excessively strong signals from entering the low-noise amplifier and causing damage, and to perform low-noise amplification. The low-noise amplifier (4.2) is mounted on the main housing (1.1) by means of a carrier through sintering.

6. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The switching circuit (5) includes a diode ceramic chip (5.1) and a switching bias circuit (5.2). The switching bias circuit (5.2) provides bias power to the diode ceramic chip (5.1), enabling it to switch between receiving and transmitting states at a speed of less than 1 microsecond. Both the diode ceramic chip (5.1) and the switching bias circuit (5.2) are mounted on the main housing (1.1) by sintering.

7. The ultra-wideband multi-functional transceiver component according to claim 1, characterized in that: The main transceiver control circuit (2) serves as the main circuit of the component and is connected to the power amplifier circuit (3), the receiving circuit (4), the coupling circuit (6), and the energy storage capacitor (7) through cable welding, copper foil bonding, or gold wire / gold strip bonding to realize the connection between radio frequency signals and control signals; the switching circuit (5) is connected to the power amplifier circuit (3) and the receiving circuit (4) through gold wire or gold strip bonding to realize the switching between the power amplifier and the receiving circuit; the main frame (1) has a cavity inside, which separates the main transceiver control circuit (2), the power amplifier circuit (3), the receiving circuit (4), the switching circuit (5), the coupling circuit (6), and the energy storage capacitor (7) through the metal cavity; After the transmitting chip enters the transceiver assembly, it first enters the common amplitude and phase delay filter circuit (2.1) for amplitude and phase delay control and bandpass filtering. Then, it is switched to the power amplifier circuit (3) through the transceiver switching circuit (2.2) to amplify the signal to the required power signal before entering the switching circuit (5). The power is output through the coupling circuit (6), and the small signal is coupled out at the same time. Received signal path: First, it passes through the coupling circuit (6), then through the switching circuit (5) to enter the receiving circuit (4), where it is limited and amplified with low noise before entering the transmit / receive switching circuit (2.2). Finally, it enters the common amplitude and phase delay filter circuit (2.1) for amplitude and phase delay control and bandpass filtering, and then outputs the required received signal.

Images