Preparation method of glass-based circuit board and light-emitting panel

Abstract

The invention provides a preparation method of a glass-based circuit board and a light-emitting panel. The preparation method comprises the following steps: preparing conductive paste, wherein the conductive paste comprises conductive powder, a low-temperature sintering aid and a flexible adhesive; printing a circuit layer pattern on the surface of the glass substrate, wherein the material of the printed circuit layer pattern comprises conductive paste; and sintering the printed circuit layer pattern on the surface of the glass substrate.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a method for preparing a glass-based circuit board and a light-emitting panel. Background Technology

[0002] Mini LED (Mini Light-Emitting Diode) panels fabricated on glass-based circuit boards offer excellent thermal stability and flatness, as well as high flexibility in optical design, making them widely used in high-end displays, automotive applications, and ultra-large screens.

[0003] The related technology provides a method for manufacturing a glass-based circuit board, which includes the following steps: fabricating a metal layer on a glass substrate; and patterning the metal layer to form a circuit board.

[0004] The glass-based circuit board manufacturing process provided by the related technologies is complex, has low production efficiency, and is costly. Summary of the Invention

[0005] This disclosure provides a method for fabricating a glass-based circuit board and a light-emitting panel, which can reduce process complexity, improve production efficiency, and reduce production costs. The technical solution is as follows: On the one hand, a method for fabricating a glass-based circuit board is provided, the method comprising: A conductive paste is prepared, the conductive paste comprising conductive powder, a low-temperature sintering aid, and a flexible binder; A circuit layer pattern is printed on the surface of a glass substrate, wherein the material of the printed circuit layer pattern includes the conductive paste; The printed circuit pattern on the surface of the glass substrate is sintered.

[0006] Optionally, the process of producing the conductive paste includes: The conductive powder is formed by mixing copper powder and an organophosphorus compound. The low-temperature sintering aid of the bismuth zinc borate system is added to the conductive powder, and one of alumina and zirconate and one of phosphate and BaTiO3 additives are incorporated. The conductive paste is formed by adding a flexible adhesive, which is a mixture of polymethyl methacrylate, sodium hexametaphosphate, and an ester solvent, to the conductive powder.

[0007] Optionally, the copper powder has a particle size of 0.8~1.2μm, the copper powder accounts for 60~80wt% of the conductive powder, and the organophosphorus compound is a zirconium and titanium-doped organophosphorus compound, or a zirconium and titanium-coated organophosphorus compound.

[0008] Optionally, sintering the printed circuit layer pattern on the surface of the glass substrate includes: preheating the glass substrate, raising the temperature of the glass substrate, maintaining the temperature of the glass substrate, and cooling the glass substrate.

[0009] Optionally, the preheating of the glass substrate includes: The temperature of the glass substrate is controlled at 78~82℃ for 8~10 minutes, and the maximum temperature difference at different points on the surface of the substrate is less than 5℃.

[0010] Optionally, the heating of the glass substrate includes: The temperature of the glass substrate is increased to 377-383°C by increasing the temperature at a rate of 4.7-5.3°C per minute.

[0011] Optionally, the temperature control of the glass substrate includes: Nitrogen and oxygen are introduced, with the oxygen concentration less than 50 ppm, and the temperature is maintained at 379~381℃ for 19~21 minutes.

[0012] Optionally, cooling the glass substrate includes: The temperature of the glass substrate is reduced to 247-253°C by cooling at a rate of 2.7-3.3°C per minute. The temperature of the glass substrate is reduced to 97-103°C by cooling at a rate of 4.7-5.3°C per minute. The glass substrate was allowed to cool naturally to room temperature.

[0013] On the other hand, a light-emitting panel is provided, the light-emitting panel comprising: a glass-based circuit board prepared by the method described above, a plurality of light-emitting units, and a reflective layer; The plurality of light-emitting units are located on the circuit board, and the reflective layer is located on the circuit board and surrounding the light-emitting units.

[0014] Optionally, the reflective layer includes a PET substrate and a silver layer plated on the surface of the PET substrate.

[0015] The beneficial effects of the technical solutions provided in this disclosure are: In this embodiment, conductive paste is prepared using conductive powder, a low-temperature sintering aid, and a flexible adhesive. The conductive powder has good conductivity and can form a stable circuit. The low-temperature sintering aid enables low-temperature sintering, avoiding stress-induced substrate cracking. The flexible adhesive ensures the fluidity of the conductive paste, making it easy to print. Using conductive paste as a raw material, circuit layer patterns are printed on the surface of the glass substrate, eliminating the need for the steps of creating a metal layer on the glass substrate and then patterning the metal layer to form a circuit board, as provided in related technologies. This shortens the circuit board production cycle by more than 30%. Sintering the conductive paste on the surface of the glass substrate forms a circuit layer, increasing the circuit board manufacturing speed, reducing production time, and saving costs. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a flowchart of a method for fabricating a circuit board according to an embodiment of the present disclosure; Figure 2 This is a flowchart of a backlight module manufacturing method provided in an embodiment of the present disclosure; Figure 3 This is a top view of the fabrication process of the light-emitting unit provided in the embodiments of this disclosure; Figure 4 This is a circuit diagram of the light-emitting unit provided in the embodiments of this disclosure; Figure 5 This is a top view of the light-emitting unit provided in an embodiment of this disclosure; Figure 6 This is a side view of the light-emitting unit provided in an embodiment of this disclosure; Figure 7 This is a top view of the light-emitting unit provided in an embodiment of this disclosure; Figure 8 This is a side view of the light-emitting unit provided in an embodiment of this disclosure; Figure 9 This is a structural diagram of the circuit board provided in the embodiments of this disclosure; Figure 10 This is a top view of the light-emitting panel provided in an embodiment of this disclosure.

[0018] The attached figures are labeled as follows: 100: Glass substrate; 200: Circuit layer; 10: Glass-based circuit board; 20: Light-emitting unit; 30: Reflective layer; 201: Support; 202: Conductive structural layer; 203: Light-emitting diode chip; 204: Phosphor layer; 2010: Stand-up bowl and cup; 2021: First conductive structure; 2022: Second conductive structure. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0020] Figure 1 This is a flowchart illustrating a method for fabricating a circuit board according to an embodiment of this disclosure. See also... Figure 1 The method includes: S11. Prepare conductive paste, wherein the conductive paste comprises conductive powder, low-temperature sintering aid and flexible binder.

[0021] S12. Printing a circuit layer pattern on the surface of a glass substrate, wherein the material of the printed circuit layer pattern includes the conductive paste.

[0022] S13. The printed circuit pattern on the surface of the glass substrate is sintered.

[0023] In this implementation, conductive paste is made using conductive powder, a low-temperature sintering aid, and a flexible binder. The conductive powder has good conductivity, enabling the formation of a stable circuit. The low-temperature sintering aid allows for low-temperature sintering, preventing stress-induced substrate cracking. The flexible binder ensures the fluidity of the conductive paste, making it easy to print. Using the conductive paste as a raw material, circuit layer patterns are printed on the surface of the glass substrate, eliminating the need for the steps of creating a metal layer on the glass substrate and then patterning that metal layer to form the circuit board, as required by related technologies. This shortens the circuit board production cycle by more than 30%. Sintering the conductive paste on the glass substrate surface forms the circuit layer, increasing the circuit board manufacturing speed, reducing production time, and saving costs.

[0024] Figure 2 This is a flowchart illustrating a backlight module fabrication method according to an embodiment of this disclosure. See also... Figure 2 The method includes the following steps: S21. Roughen the surface of the glass substrate.

[0025] In this embodiment of the disclosure, the glass substrate may be a tempered glass substrate.

[0026] In this embodiment of the disclosure, step S21 may include: Using 200-400 mesh diamond abrasive, the glass substrate surface is impacted at an angle of 80°-85° under an air pressure of 0.4-0.6 MPa, forming a matte rough structure with a depth of 5-8 μm on the glass substrate surface.

[0027] In this implementation, the surface of the glass substrate is roughened using the above method to form a matte rough structure, which can improve the adhesion of the circuit layer on the glass substrate by more than 200%.

[0028] For example, using 300-mesh diamond abrasive, the glass substrate surface is impacted at an angle of 80° under an air pressure of 0.5 MPa to form a matte rough structure with a depth of 6 μm on the glass substrate surface.

[0029] S22. Conductive paste is made using conductive powder, low-temperature sintering aid and flexible binder.

[0030] For example, step S22 may include: The first step is to mix copper powder and organophosphorus compounds to form a conductive powder.

[0031] In the embodiments of this disclosure, the particle size of copper powder can be 0.8~1.2μm, the proportion of copper powder in conductive powder can be 60~80wt%, and the organophosphorus compound is a zirconium and titanium doped organophosphorus compound, or a zirconium and titanium coated organophosphorus compound.

[0032] In this implementation, the copper powder has a particle size of 0.8~1.2μm. The particle size of the copper powder is not too small, as this would increase the processing difficulty. The particle size of the copper powder is also not too large, as this would result in poor dispersibility and easy agglomeration. The proportion of copper powder in the conductive powder is 60~80wt%. Copper powder is the main conductive material in the conductive powder. Too low a proportion would reduce the conductivity of the conductive powder. The proportion of copper powder is also not too high, as too high a proportion would make it difficult to form the conductive powder. The organophosphorus compound is a zirconium and titanium doped organophosphorus compound, or an organophosphorus compound coated with zirconium and titanium, which can suppress the risk of oxidation of the circuit layer and achieve a resistivity of ≤5.0μΩ·cm for the circuit layer after sintering. The addition of organophosphorus compound, whose PC bond length is better than that of traditional phosphate compound, can form a stable copper surface protective layer.

[0033] For example, the copper powder has a particle size of 1 μm, the copper powder accounts for 70 wt% of the conductive powder, and the organophosphorus compound is a zirconium and titanium-doped organophosphorus compound.

[0034] In the embodiments disclosed herein, the organophosphorus compound may be a bisphosphonic acid or a carboxylic acid phosphonic acid.

[0035] For example, the organophosphorus compound is a bisphosphonic acid.

[0036] The second step involves adding a low-temperature sintering aid of the bismuth zinc borate system to the conductive powder, and incorporating one of alumina and zirconate, as well as one of phosphate and BaTiO3 additives.

[0037] In this implementation, a low-temperature sintering aid based on a bismuth zinc borate system is added to the conductive powder. The bismuth-based glass powder (Bi2O3-B2O3-ZnO) aid reduces the sintering temperature to 380±20℃. With the help of a gradient temperature control curve (temperature rise ≤5℃ / min), the entire sintering process only takes 40 minutes, saving 50% energy compared to the traditional high-temperature process, and matching the thermal limit of tempered glass. The addition of either alumina or zirconate can regulate the coefficient of thermal expansion (CTE) (CTE≈9ppm / ℃). The addition of either phosphate or BaTiO3 additives (15%~30% vol) can improve the chemical corrosion resistance of the sintered layer and prevent high-frequency signal loss in the circuit formation. The total proportion of the low-temperature sintering aid is about 7wt.%.

[0038] The third step involves adding a flexible binder, a mixture of polymethyl methacrylate, sodium hexametaphosphate, and ester solvents, to the conductive powder to form a conductive paste.

[0039] In this implementation, a flexible binder consisting of polymethyl methacrylate, sodium hexametaphosphate, and ester solvents is added to the conductive powder to form a conductive paste. Polymethyl methacrylate provides printability and completely decomposes at high temperatures to avoid residue. Sodium hexametaphosphate prevents copper powder agglomeration and ensures the leveling properties of the conductive paste. The ester solvents can adjust the viscosity of the conductive paste to 5000~8000 cPs for precision printing.

[0040] S23. Print conductive paste onto the surface of a glass substrate.

[0041] In this embodiment of the disclosure, the conductive paste is printed on the surface of the glass substrate using screen printing or inkjet printing.

[0042] In this implementation method, precision printing can be achieved by using screen printing or inkjet printing to print conductive paste onto the surface of the glass substrate. Printing conductive paste onto the surface of the glass substrate eliminates the need for etching methods provided by related technologies to create circuit layers, such as pattern transfer, development, and etching, thereby shortening the production cycle of the circuit board by more than 30%.

[0043] In one example, a 250-400 mesh nylon screen is used to print conductive paste onto the surface of a glass substrate, with a minimum line width of 0.2 mm and a film thickness of 15-30 μm.

[0044] In this method, conductive paste is printed with precise deposition, achieving a material utilization rate of over 95%, reducing raw material waste by 60% compared to etching. The entire process generates no acidic etching waste liquid (such as hydrochloric acid and ferric chloride), avoiding the risk of heavy metal pollution and making it green and environmentally friendly.

[0045] For example, conductive paste is printed onto the surface of a glass substrate using a 300-mesh nylon screen, with a line width of 0.2 mm and a film thickness of 20 μm.

[0046] In another example, conductive paste is printed onto the surface of a glass substrate using piezoelectric inkjet printing with an accuracy of ±10μm. The printed linewidth is 0.05~0.15mm and the film thickness is 8~12μm.

[0047] For example, conductive paste is printed onto the surface of a glass substrate using piezoelectric inkjet printing with an accuracy of ±10μm, with a line width of 0.1mm and a film thickness of 10μm.

[0048] S24. Sinter the conductive paste on the surface of the glass substrate.

[0049] For example, step S24 may include: The first step is to preheat the glass substrate.

[0050] The temperature of the glass substrate is controlled at 78~82℃ for 8~10 minutes, and the maximum temperature difference at different points on the substrate surface is less than 5℃.

[0051] In this implementation, the temperature of the glass substrate is controlled at 78~82℃ for 8~10 minutes, and the maximum temperature difference at different points on the substrate surface is less than 5℃, which can eliminate the problem of micro-stress concentration caused by cutting and edge grinding.

[0052] For example, the temperature of the glass substrate is controlled to be maintained at 80°C for 9 minutes.

[0053] The second step is to heat the glass substrate.

[0054] The temperature of the glass substrate is increased to 377-383°C by increasing the temperature at a rate of 4.7-5.3°C per minute.

[0055] In this implementation, the temperature of the glass substrate is increased to 377-383°C at a rate of 4.7-5.3°C per minute. This avoids the circuit board from cracking due to excessively rapid temperature rise and also improves the sintering rate.

[0056] For example, the temperature of a glass substrate printed with conductive paste is increased to 380°C at a rate of 5°C per minute.

[0057] In this embodiment, a proportional-integral-derivative (PID) temperature control system is used to control the heating rate deviation to be less than 0.3℃ / min, while simultaneously monitoring changes in the network structure of the conductive paste inside the glass substrate (Raman spectral characteristic peak shift < 2cm). -1 ).

[0058] The third step is to maintain a constant temperature on the glass substrate.

[0059] Introduce nitrogen and oxygen, with an oxygen concentration of less than 50 ppm, and maintain a temperature of 379~381℃ for 19~21 minutes.

[0060] In this implementation, nitrogen and oxygen are introduced, with an oxygen concentration of less than 50 ppm. During the critical period of compressive stress layer reorganization, the temperature is maintained at 379~381℃ for 19~21 minutes. This can prevent the surface oxide layer from thickening and affecting the adhesion of subsequent coatings, and can also adjust the substrate stress to avoid glass substrate breakage. Sintering under an inert atmosphere (nitrogen) can also prevent copper oxidation, and the yield rate is increased to over 99%.

[0061] For example, nitrogen and oxygen are introduced, with an oxygen concentration of 40 ppm, and the temperature is maintained at 380°C for 20 minutes.

[0062] S25. Gradual cooling is performed on the glass substrate to form a glass-based circuit board.

[0063] For example, step S25 may include: The first step is to cool the glass substrate down to 247-253°C at a rate of 2.7-3.3°C per minute.

[0064] In this implementation, after the glass substrate is formed, the temperature is reduced at a rate of 2.7 to 3.3°C per minute to a temperature of 247 to 253°C, which can prevent sudden temperature changes that could cause the glass substrate to crack.

[0065] For example, after the glass substrate is formed, the temperature is reduced to 250°C by cooling at a rate of 3°C per minute.

[0066] The second step is to cool the glass substrate down to 97-103°C at a rate of 4.7-5.3°C per minute.

[0067] In this implementation, the temperature of the glass substrate is reduced to 97-103°C at a rate of 4.7-5.3°C per minute. This increases the cooling rate and avoids sudden temperature changes that could cause the glass substrate to crack, while ensuring the cooling rate.

[0068] For example, the temperature of the glass substrate is reduced to 100°C by cooling at a rate of 5°C per minute.

[0069] The third step is to allow the glass substrate to cool naturally to room temperature.

[0070] In this implementation, the glass substrate is naturally cooled to room temperature, which can increase the cooling rate of the glass substrate.

[0071] In the above steps, the temperature is monitored using a thermal shock threshold (the instantaneous temperature difference alarm value is set to 230℃).

[0072] S26. Perform performance testing on the glass-based circuit board.

[0073] In this embodiment of the disclosure, step S26 may include: The adhesion test is conducted using the cross-cut adhesion test according to the ASTM D3359 Class 4B standard. If the adhesion between the circuit layer and the substrate is greater than or equal to 80 N / cm, it is considered qualified; otherwise, it is considered unqualified.

[0074] If the sheet resistance of a glass-based circuit board is less than 15mΩ / □, it is considered qualified; otherwise, it is unqualified.

[0075] If the resistance drift is less than 8% after 1000 thermal cycles of -40℃ to 125℃, it is considered qualified; otherwise, it is unqualified.

[0076] S27. Make the light-emitting unit.

[0077] For example, step S27 may include: The first step is to install the light-emitting diode chip inside the bracket.

[0078] The support includes a support cup, and a conductive structure layer is located inside the support cup. Three light-emitting diode chips are electrically connected to the conductive structure layer.

[0079] Figure 3 This is a top view of the fabrication process of the light-emitting unit provided in the embodiments of this disclosure, see below. Figure 3 , Figure 3 Except for the bottom of the support, the bowl of the support is not shown. The conductive structure layer 202 includes one first conductive structure 2021 and five second conductive structures 2022.

[0080] The first conductive structure 2021 is located in the middle of the support 201. The projection of the first conductive structure 2021 on the surface of the support 201 is a convex shape. The convex shape extends to the edge of one side of the support 201. Two second conductive structures 2022 are located on one side edge of the support 201, and another three second conductive structures 2022 are located on the other side edge of the support 201.

[0081] Three light-emitting diode chips 203 are attached to the first conductive structure 2021, but are not electrically connected to the first conductive structure 2021.

[0082] In this embodiment of the disclosure, one electrode of the middle LED chip 203 is connected to the protrusion of the first conductive structure 2021 via a lead wire (not shown in the figure), and the other electrode of the middle LED chip 203 is connected to the second conductive structure 2022 in the middle of the other side via a lead wire.

[0083] The two electrodes of the other two light-emitting diode chips 203 are respectively connected to the two second conductive structures 2022 located on both sides by leads.

[0084] The other two light-emitting diode chips 203 are connected in series through the second conductive structure 2022 in the circuit at the bottom of the bracket.

[0085] In order to balance the resistance, the light-emitting diode chip 203 in the middle is connected to the first conductive structure 2021 of the raised structure, thus achieving resistance balance.

[0086] In this embodiment of the disclosure, the material dropping method of the support arrangement can be a cutting support or a dropping support.

[0087] Figure 4 This is a circuit diagram of the light-emitting unit provided in an embodiment of this disclosure. See also... Figure 4 The light-emitting unit uses a single-sided circuit board. Figure 4 Apart from Figure 3 The lines outside the conductive structure shown are the lines inside the conductive structure layer 202, such as... Figure 4 As shown, the other two light-emitting diode chips 203 are connected in series through the second conductive structure 2022 in the circuit at the bottom of the bracket, and the convex-shaped protrusion replaces the resistor, which eliminates the need for the jumper wire that originally needed to be connected to the resistor.

[0088] Figure 5 This is a top view of the light-emitting unit provided in the embodiments of this disclosure. Figure 6 This is a side view of the light-emitting unit provided in an embodiment of this disclosure. See also... Figure 5 and Figure 6 The cup opening of the cutting support is rectangular.

[0089] Figure 7 This is a top view of the light-emitting unit provided in the embodiments of this disclosure. Figure 8 This is a side view of the light-emitting unit provided in an embodiment of this disclosure. See also... Figure 7 and Figure 8 The cup opening of the drop-type support is round.

[0090] In this embodiment of the disclosure, the scaffold is made of sheet molding compound (SMC).

[0091] In this embodiment of the disclosure, the light-emitting diode chip may include three light-emitting diode chips, which may be red light-emitting diode chips, blue light-emitting diode chips, or green light-emitting diode chips.

[0092] In this embodiment, phosphors of different colors are added to the three light-emitting diode chips to create a fluorescent layer.

[0093] Table 1 below shows the permutations and combinations of three light-emitting diode chips and phosphor layers.

[0094]

[0095] Referring to Table 1, the three LED chips and the phosphor layer can be combined in five ways, where R represents a red LED chip, G represents a green LED chip, and B represents a blue LED chip. Using these combinations, the resulting light-emitting unit can emit white light.

[0096] In this implementation, multiple light-emitting diode (LED) chips of different colors are combined with wavelengths that match the wavelength of the LCD screen spectrum, resulting in higher light utilization efficiency, brightness, and color gamut for the backlight LED chips through the LCD screen. Furthermore, each LED chip is independently controlled, allowing for precise control of brightness based on the display effect, thereby improving image quality and contrast.

[0097] In this embodiment, the central LED chip is green, and the other two LED chips on both sides are blue.

[0098] The third step is to fabricate a fluorescent layer to cover the light-emitting diode chip and the conductive structure layer.

[0099] S28. Make the backlight module.

[0100] For example, step S28 may include: The first step is to print solder paste on the glass-based circuit board.

[0101] The second step is to reflow solder multiple light-emitting units onto a glass-based circuit board.

[0102] In one example, the pins of the light-emitting unit are located on the back of the light-emitting unit, and in this case, electrical connection with the glass-based circuit board is achieved directly through the above-mentioned soldering.

[0103] In another example, the pins of the light-emitting unit are located on the side of the light-emitting unit. In this case, after the above soldering, electrical connection with the glass-based circuit board is achieved through lead wire connection.

[0104] The third step is to create a reflective layer, which is located on the glass-based circuit board.

[0105] In this embodiment of the disclosure, the thickness of the reflective layer can be 0.18~0.3mm.

[0106] For example, the thickness of the reflective layer is 0.2 mm.

[0107] In this embodiment of the disclosure, the reflective layer includes a polyethylene terephthalate (PET) substrate and a silver layer plated on the surface of the PET substrate.

[0108] In this implementation, the reflective layer, including a PET substrate and a silver layer plated on the surface of the PET substrate, can achieve mirror reflection, making the reflectivity of the reflective layer greater than or equal to 97%, which is 1% higher than the reflectivity of traditional white polyester reflective film and has higher brightness.

[0109] In this embodiment of the disclosure, the thickness of the silver layer can be greater than or equal to 100 nm.

[0110] For example, the thickness of the silver layer is 100 nm.

[0111] In this embodiment, the backlight module does not require an additional metal backplate, saving costs and improving operational efficiency.

[0112] Figure 9 This is a structural diagram of the circuit board provided in an embodiment of this disclosure. See also... Figure 9 The circuit board includes a glass substrate 100 and a circuit layer 200.

[0113] The circuit layer 200 is a printed circuit layer. The material of the circuit layer 200 is a mixture of conductive powder, low-temperature sintering aid and flexible adhesive to make conductive paste.

[0114] In this implementation, the circuit layer is a mixture of conductive powder, low-temperature sintering aid, and flexible adhesive to form a conductive paste. The conductive powder has good conductivity and can form a stable circuit. The low-temperature sintering aid enables low-temperature sintering, avoiding stress-induced substrate cracking. The flexible adhesive ensures the fluidity of the conductive paste, making it easy to print. The circuit layer is a printed circuit layer, eliminating the steps of patterning the metal layer on the glass substrate to form a circuit board, as provided in related technologies, thus shortening the circuit board production cycle by more than 30%.

[0115] In the embodiments of this disclosure, the conductive powder includes copper powder, zirconium powder, titanium powder, and organophosphorus compounds with a median particle size of 0.8~1.2μm, and the proportion of copper powder in the conductive powder is 60~80wt%.

[0116] In the embodiments of this disclosure, the particle size of copper powder can be 0.8~1.2μm, the proportion of copper powder in conductive powder can be 60~80wt%, and the organophosphorus compound is a zirconium and titanium doped organophosphorus compound, or a zirconium and titanium coated organophosphorus compound.

[0117] In this implementation, the copper powder has a particle size of 0.8~1.2μm. The particle size of the copper powder is not too small, as this would increase the processing difficulty; the particle size of the copper powder is also not too large, as this would affect the conductivity. The proportion of copper powder in the conductive powder is 60~80wt%. The proportion of copper powder is not too low, as this would reduce the conductivity of the conductive powder; the proportion of copper powder is also not too high, as this would increase the cost. The organophosphorus compound is a zirconium and titanium-doped organophosphorus compound, or an organophosphorus compound coated with zirconium and titanium, which can suppress the risk of oxidation of the circuit layer and achieve a resistivity of ≤5.0μΩ·cm for the circuit layer after sintering. The addition of organophosphorus compound can form a stable copper surface protective layer.

[0118] For example, the copper powder has a particle size of 1 μm, the copper powder accounts for 70 wt% of the conductive powder, and the organophosphorus compound is a zirconium and titanium-doped organophosphorus compound.

[0119] In the embodiments disclosed herein, the organophosphorus compound may be a bisphosphonic acid or a carboxylic acid phosphonic acid.

[0120] For example, the organophosphorus compound is a bisphosphonic acid.

[0121] In the embodiments disclosed herein, the low-temperature sintering aid may include: a low-temperature sintering aid of a bismuth zinc borate system, one of alumina and zirconate, and one of phosphate and BaTiO3 additives.

[0122] In embodiments of this disclosure, the flexible adhesive may include polymethyl methacrylate, sodium hexametaphosphate, and ester solvents.

[0123] Figure 10 This is a top view of the light-emitting panel provided in an embodiment of this disclosure. See also... Figure 10 The light-emitting panel includes the aforementioned glass-based circuit board 10, multiple light-emitting units 20, and a reflective layer 30.

[0124] Multiple light-emitting units 20 are located on the glass-based circuit board 10, and a reflective layer 30 is located on the glass-based circuit board 10 and surrounds the light-emitting units 20.

[0125] In this embodiment of the disclosure, the reflective layer 30 includes a polyethylene terephthalate (PET) substrate and a silver layer plated on the surface of the PET substrate.

[0126] In this implementation, the reflective layer, including a PET substrate and a silver layer plated on the surface of the PET substrate, can achieve specular reflection, making the reflectivity of the reflective layer greater than or equal to 97%.

[0127] In this embodiment of the disclosure, the thickness of the silver layer can be greater than or equal to 100 nm.

[0128] For example, the thickness of the silver layer is 100 nm.

[0129] Refer again Figures 4 to 7 The light-emitting unit 20 includes a support 201, a conductive structure layer 202, three light-emitting diode chips 203, and a fluorescent layer 204.

[0130] The support 201 includes a support cup 2010, a conductive structure layer 202 located inside the support cup 2010, three light-emitting diode chips 203 electrically connected to the conductive structure layer 202, and a fluorescent layer 204 covering the three light-emitting diode chips 203.

[0131] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A method for preparing a glass-based circuit board, characterized in that, The preparation method includes: A conductive paste is prepared, the conductive paste comprising conductive powder, a low-temperature sintering aid, and a flexible binder; A circuit layer pattern is printed on the surface of a glass substrate, wherein the material of the printed circuit layer pattern includes the conductive paste; The printed circuit pattern on the surface of the glass substrate is sintered.

2. The preparation method according to claim 1, characterized in that, The preparation of the conductive paste includes: The conductive powder is formed by mixing copper powder and an organophosphorus compound. The low-temperature sintering aid of the bismuth zinc borate system is added to the conductive powder, and one of alumina and zirconate and one of phosphate and BaTiO3 additives are incorporated. The conductive paste is formed by adding a flexible adhesive, which is a mixture of polymethyl methacrylate, sodium hexametaphosphate, and an ester solvent, to the conductive powder.

3. The preparation method according to claim 2, characterized in that, The copper powder has a particle size of 0.8~1.2μm, the copper powder accounts for 60~80wt% of the conductive powder, and the organophosphorus compound is a zirconium and titanium doped organophosphorus compound, or a zirconium and titanium coated organophosphorus compound.

4. The preparation method according to any one of claims 1 to 3, characterized in that, The sintering of the printed circuit layer pattern on the surface of the glass substrate includes: preheating the glass substrate, raising the temperature of the glass substrate, maintaining the temperature of the glass substrate, and cooling the glass substrate.

5. The preparation method according to claim 4, characterized in that, The preheating of the glass substrate includes: The temperature of the glass substrate is controlled at 78~82℃ for 8~10 minutes, and the maximum temperature difference at different points on the surface of the substrate is less than 5℃.

6. The preparation method according to claim 5, characterized in that, The heating of the glass substrate includes: The temperature of the glass substrate is increased to 377-383°C by increasing the temperature at a rate of 4.7-5.3°C per minute.

7. The preparation method according to claim 6, characterized in that, The temperature control of the glass substrate includes: Nitrogen and oxygen are introduced, with the oxygen concentration less than 50 ppm, and the temperature is maintained at 379~381℃ for 19~21 minutes.

8. The preparation method according to claim 7, characterized in that, The cooling of the glass substrate includes: The temperature of the glass substrate is reduced to 247-253°C by cooling at a rate of 2.7-3.3°C per minute. The temperature of the glass substrate is reduced to 97-103°C by cooling at a rate of 4.7-5.3°C per minute. The glass substrate was allowed to cool naturally to room temperature.

9. A light-emitting panel, characterized in that, The light-emitting panel includes: a glass-based circuit board (10) prepared by the method of any one of claims 1 to 8, a plurality of light-emitting units (20) and a reflective layer (30). The plurality of light-emitting units (20) are located on the glass-based circuit board (10), and the reflective layer (30) is located on the glass-based circuit board (10) and surrounds the light-emitting units (20).

10. The light-emitting panel according to claim 9, characterized in that, The reflective layer (30) includes a PET substrate and a silver layer plated on the surface of the PET substrate.

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