Automatic temperature control system and method for sputtering deposition device

Abstract

The invention belongs to the technical field of sputter deposition, and provides an automatic temperature control system and method for a sputter deposition device, and the system realizes the accurate control of the cavity temperature in the sputter deposition process by integrating components such as a vacuum gauge, a gas cylinder, a valve, a thermocouple temperature measurement element and a PID (Proportion Integration Differentiation) regulator. The system monitors the temperature of the cavity in real time by using the thermocouple, and automatically adjusts the power of the heating wire through the PID regulator according to the comparison result of a set value and an actual value, thereby maintaining the stability of the temperature of the cavity. In addition, the system has the function of communicating with an upper computer, remote monitoring and control can be carried out through a software layer, and the automation level and the temperature control precision of the sputtering deposition process are improved. The problems that in the prior art, temperature control precision is low, the automation degree is insufficient, and stability is poor are solved, through linkage control over the temperature, the vacuum degree and the gas flow, the consistency of film performance is guaranteed, and the method is suitable for large-scale production of high-precision films.

Description

Technical Field

[0001] This invention belongs to the field of sputtering deposition technology, specifically relating to an automated temperature control system and method for sputtering deposition apparatus. Background Technology

[0002] Sputtering deposition, as one of the core technologies of physical vapor deposition, is widely used in the manufacturing processes of high-end products such as semiconductor chips, optical devices, and electronic components due to its advantages such as high film density, strong adhesion, and good film uniformity. In the sputtering deposition process, the chamber temperature is a key parameter affecting film quality, and its stability directly determines the core indicators such as the film's refractive index, crystallinity, thickness uniformity, and mechanical properties.

[0003] In existing technologies, temperature control in sputtering deposition apparatuses mostly employs traditional manual adjustment or simple isothermal control modes, which have several drawbacks: First, the temperature monitoring accuracy is low, making it difficult to capture dynamic changes in the internal temperature of the chamber in real time, resulting in lag in temperature control; second, there is a lack of automated closed-loop adjustment mechanisms, relying on manual experience to adjust the heating power, which can easily cause excessive temperature fluctuations, thereby affecting the consistency of film performance; third, the linkage control between temperature and process parameters such as vacuum level and gas flow rate is not achieved, resulting in poor system stability and failing to meet the requirements of high-precision film preparation.

[0004] Especially in the fabrication of optical thin films and semiconductor functional thin films, the refractive index of the film is extremely sensitive to temperature changes. Even a small temperature deviation can cause the refractive index to deviate from the design value, ultimately affecting the performance of the device. Therefore, developing an automated temperature control system capable of precise monitoring of the cavity temperature, automatic closed-loop regulation, and multi-parameter coordinated control has become the key to overcoming the current technological bottlenecks. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention provides an automated temperature control system and method for a sputtering deposition apparatus, thereby resolving the issues in the prior art. The technical solution adopted by this invention is as follows: An automated temperature control system for a sputtering deposition apparatus includes a cavity assembly, a temperature monitoring module, a heating module, a gas regulation module, a control module, and a host computer. The cavity assembly is used to provide a sealed vacuum environment for sputter deposition, and it has a stage inside. The temperature monitoring module includes at least two thermocouple temperature sensing elements, which are respectively embedded in the inner wall of the cavity assembly and the bottom of the stage, for real-time acquisition of the cavity ambient temperature and the stage temperature. The heating module includes heating wires arranged around the outer wall of the cavity assembly; The gas regulation module is used to input sputtering gas into the cavity assembly and to regulate the gas flow rate and vacuum level inside the cavity assembly. The control module is used to coordinate and adjust the heating power, gas flow rate, and vacuum level. The host computer and the control module are connected via a communication interface.

[0006] Furthermore, the gas regulation module includes a gas cylinder, a vacuum gauge, an inlet valve, an exhaust valve, and a gas flow controller. The gas cylinder is connected to the cavity assembly via the inlet valve and the gas flow controller, and is used to introduce a preset type of sputtering gas into the cavity assembly. The vacuum gauge is located on the top of the cavity assembly and is used to monitor the vacuum level inside the cavity in real time. The exhaust valve is used to adjust the pressure inside the cavity assembly, and the gas flow controller is used to control the flow rate of the sputtering gas.

[0007] Furthermore, the control module includes a PID controller and a data processing unit. The data processing unit is electrically connected to the temperature monitoring module and the vacuum gauge, respectively, and is used to filter, amplify, and digitize the temperature detection signal and the vacuum signal. The PID controller is electrically connected to the data processing unit, the heating drive unit, the inlet valve, the exhaust valve, and the gas flow controller, respectively, and is used to output a control signal through a PID algorithm based on the deviation between the preset temperature value and the actual detected temperature, thereby realizing the coordinated adjustment of heating power, gas flow rate, and vacuum degree.

[0008] An automated temperature control system and method for a sputtering deposition apparatus includes the following steps: Step 1: System initialization, setting the preset temperature value via the host computer. Vacuum degree threshold Gas flow rate and PID initial control parameters; Step 2: Vacuum environment setup. The control module opens the exhaust valve to evacuate the cavity components, and the vacuum gauge provides real-time feedback on the vacuum level. When the vacuum level reaches the preset threshold... At this time, the exhaust valve is closed while the intake valve is opened, and the gas flow controller operates according to the set flow rate. Introduce sputtering gas; Step 3: Temperature monitoring and deviation calculation; thermocouple temperature sensing element collects cavity temperature in real time. and stage temperature The data processing unit processes the acquired temperature signals and calculates the average temperature. And obtain the temperature deviation. ; Step 4: PID closed-loop control. The PID controller calculates the output control quantity based on the temperature deviation using an improved PID control algorithm. The expression for the improved PID control algorithm is: ; in, For output control quantity, This is the proportionality coefficient. For integration time, For differential time, The vacuum coupling coefficient is... For dynamic weighting coefficients, This is the noise suppression coefficient; According to the control quantity Adjust the output power of the heating wire, and simultaneously adjust the opening of the air inlet valve and the gas flow rate to stabilize the cavity temperature at the preset value. ; Step 5: Process monitoring and parameter optimization. The host computer displays temperature data, vacuum data and equipment operating status in real time. If the temperature deviation continues to exceed the allowable range, the PID controller will automatically start the parameter tuning program to optimize its parameters until the temperature deviation returns to within ±0.3℃. Step 6: Process completed. After sputtering deposition, the control module stops the heating wire, closes the inlet valve, opens the exhaust valve to release the chamber pressure, and the system returns to its initial state.

[0009] Furthermore, in step 4, when At that time, the PID controller reduces the output control quantity. Reduce the heating wire power and simultaneously decrease the intake valve opening; when At that time, increase the output control quantity Increase the power of the heating wire and increase the opening of the intake valve.

[0010] Furthermore, in step 4, the vacuum coupling coefficient satisfy: ; in, For the maximum vacuum deviation, This represents the change in heating power corresponding to the temperature deviation.

[0011] Furthermore, in step 4, the dynamic weighting coefficients The value can be: Warming phase: ; Constant temperature stage: ; Cooling phase: .

[0012] Furthermore, in step 4, the noise suppression coefficient =2℃.

[0013] The present invention has the following beneficial effects: (1) The present invention uses a high-precision thermocouple temperature measuring element to realize real-time monitoring of cavity temperature and stage temperature. Combined with PID closed-loop regulation algorithm, the cavity temperature is stabilized within the preset value ±0.3℃ range, the temperature control accuracy is significantly improved, and the consistency of key performance such as thin film refractive index is effectively guaranteed. (2) The system integrates the linkage control functions of temperature, vacuum degree and gas flow rate, and realizes multi-parameter coordinated adjustment through PID controller to avoid system instability caused by single parameter adjustment and adapt to the needs of different sputtering processes. (3) It has the functions of remote monitoring, parameter setting and alarm of host computer, which eliminates the need for manual on-site operation, reduces human error, improves production efficiency and reduces operation and maintenance costs; (4) The system has a reasonable structure and strong compatibility. It can be directly adapted to various existing sputtering deposition devices without large-scale equipment modification. It has broad application prospects and promotion value. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the system structure of the present invention; Figure 2 This is a flowchart of the present invention; Figure 3 This is a flowchart of the sputtering deposition process. Detailed Implementation

[0015] The following will be described in conjunction with embodiments of the present invention. Figures 1-3 The technical solutions in the embodiments of the present invention will be clearly and completely described. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Unless otherwise specified, the technical means used in the embodiments are conventional means well known to those skilled in the art.

[0016] like Figure 1 This invention proposes an automated temperature control system for a sputtering deposition apparatus, comprising a cavity assembly, a temperature monitoring module, a heating module, a gas regulation module, a control module, and a host computer. The cavity assembly provides a sealed vacuum environment for sputter deposition, and its interior is equipped with a stage for carrying the substrate. The temperature monitoring module includes at least two thermocouple temperature sensing elements, which are respectively embedded in the inner wall of the cavity assembly and the bottom of the stage, for real-time acquisition of the cavity ambient temperature and the stage temperature, and outputting a high-precision temperature detection signal. The heating module includes a heating wire and a heating drive unit disposed around the outer wall of the cavity assembly. The heating drive unit is electrically connected to the heating wire and is used to receive control signals and adjust the output power of the heating wire. The gas regulation module includes a gas cylinder, a vacuum gauge, an inlet valve, an exhaust valve, and a gas flow controller. The gas cylinder is connected to the cavity assembly via the inlet valve and the gas flow controller, and is used to introduce a preset type of sputtering gas into the cavity. The vacuum gauge is located on the top of the cavity assembly and is used to monitor the vacuum level inside the cavity in real time. The exhaust valve is used to adjust the pressure inside the cavity, and the gas flow controller is used to precisely control the flow rate of the sputtering gas. The control module includes a PID controller and a data processing unit. The data processing unit is electrically connected to the temperature monitoring module and the vacuum gauge, respectively, and is used to filter, amplify, and digitize the temperature detection signal and the vacuum signal. The PID controller is electrically connected to the data processing unit, the heating drive unit, the inlet valve, the exhaust valve, and the gas flow controller, respectively, and is used to output a control signal through a PID algorithm based on the deviation between the preset temperature value and the actual detected temperature, so as to realize the coordinated adjustment of heating power, gas flow rate, and vacuum degree. The host computer and the control module are connected through a communication interface. The host computer is used to set process parameters, display the equipment operating status in real time, store monitoring data, and remotely issue control commands.

[0017] Furthermore, the thermocouple temperature sensing element has a measurement accuracy of no less than ±0.1℃ and a response time of no more than 0.5s, ensuring the real-time performance and accuracy of temperature monitoring.

[0018] Furthermore, the PID controller incorporates an adaptive PID control algorithm, and its proportional coefficient... Integral Time Differential time The adjustment ranges are 0.1-10.0, 0.5-30.0s, and 0-5.0s, respectively, and can be adjusted online via a host computer to adapt to the temperature control requirements of different sputtering processes.

[0019] Furthermore, the control module also includes a temperature deviation alarm unit. When the absolute value of the deviation between the actual temperature and the preset temperature exceeds ±0.3℃ for a continuous period of 3 seconds, the alarm unit automatically triggers an audible and visual alarm and displays the alarm information on the host computer.

[0020] like Figure 2 The present invention also proposes an automated temperature control method for a sputtering deposition apparatus, wherein the method is implemented using the aforementioned automated temperature control system and includes the following steps: Step 1: System initialization, setting the preset temperature value via the host computer. Vacuum degree threshold Gas flow rate and PID initial control parameters ( , , ); Step 2: Vacuum environment setup. The control module opens the exhaust valve to evacuate the cavity components, and the vacuum gauge provides real-time feedback on the vacuum level. When the vacuum level reaches the preset threshold... At this time, the exhaust valve is closed while the intake valve is opened, and the gas flow controller operates according to the set flow rate. Introduce sputtering gas; Step 3: Temperature monitoring and deviation calculation; thermocouple temperature sensing element collects cavity temperature in real time. and stage temperature The data processing unit processes the acquired temperature signals and calculates the average temperature. And obtain the temperature deviation. ; Step 4: PID closed-loop control. The PID controller calculates the output control quantity based on the temperature deviation using an improved PID control algorithm. The expression for the improved PID control algorithm is: ; in, For output control quantity, This is the proportionality coefficient. For integration time, For differential time, The vacuum coupling coefficient is... For dynamic weighting coefficients, This is the noise suppression coefficient; According to the control quantity Adjust the output power of the heating wire, and simultaneously adjust the opening of the air inlet valve and the gas flow rate to stabilize the cavity temperature at the preset value. ; Step 5: Process monitoring and parameter optimization. The host computer displays temperature data, vacuum data, and equipment operating status in real time. If the temperature deviation continues to exceed the allowable range, the PID controller automatically starts the parameter tuning program to optimize the process. , , The parameters are adjusted until the temperature deviation returns to within ±0.3℃. Step 6: Process completed. After sputtering deposition, the control module stops the heating wire, closes the inlet valve, opens the exhaust valve to release the chamber pressure, and the system returns to its initial state.

[0021] Furthermore, in step 4, when At that time, the PID controller reduces the output control quantity. Reduce the heating wire power and appropriately decrease the intake valve opening; when At that time, increase the output control quantity Increase the power of the heating wire and appropriately increase the opening of the air inlet valve to achieve rapid and stable temperature regulation.

[0022] In step 4 of this invention, an improved PID control algorithm is proposed, which introduces a vacuum coupling coefficient. Dynamic weighting coefficient Noise suppression coefficient Specifically, the vacuum coupling coefficient This is used to quantify the impact of vacuum deviation on temperature control, enabling coordinated adjustment of temperature and vacuum. Dynamic weighting coefficient. The deviation weight is dynamically adjusted according to the deposition stage to adapt to different response requirements of heating, isothermal, and cooling. Noise suppression coefficient. This is used to suppress temperature measurement noise and process disturbances, and to avoid amplifying high-frequency interference in the differentiating element. The specific numerical determination process is as follows: Prerequisites and basic parameter definitions: Based on the SiO2-TiO2 composite thin film preparation process, the core basic parameters are set as follows: preset temperature. ℃, permissible temperature deviation ℃; Preset threshold for vacuum degree =5×10 -3 Pa, vacuum level is allowed to fluctuate =±1×10 -4 Pa; preset gas flow rate =30 sccm, total deposition time =60min; Temperature measurement noise amplitude ℃, thermocouple response time =0.3s.

[0023] 1. Vacuum coupling coefficient Quantitative derivation: Vacuum degree in sputtering deposition By influencing the thermal conductivity of gas molecules, the temperature field of the cavity is altered: when the vacuum level is lower than... At this time, heat conduction weakens, requiring increased heating power to compensate; the vacuum level is higher than At this time, heat conduction increases, requiring a reduction in heating power. Therefore, The temperature compensation power corresponding to a unit vacuum deviation needs to be quantified.

[0024] Define vacuum deviation ( (This refers to the real-time vacuum level); experimentally measured: for every deviation of the vacuum level from... One unit (1×10) -4 (Pa), heating power needs to be adjusted. =0.15kW (based on heating power adjustment range of 0~5kW, temperature deviation ≤±0.3℃); In traditional PID, the proportional coefficient The physical meaning is the output change corresponding to a unit temperature deviation, as stated in the document. When the temperature deviation is 2.5°C, the corresponding change in heating power is as follows: =2.5kW; To make the effect of vacuum deviation on temperature equivalent to temperature deviation, Must meet:

[0025] The power adjustment corresponding to the maximum vacuum deviation shall not exceed the adjustment corresponding to the maximum temperature deviation; Substitute the values: Solving for: ; Combined with the vacuum gauge measurement range (10 -5 Pa 1atm) and process vacuum range (1×10 -3 Pa, 1×10 -2 Pa), The value range is 500 - 700 kW·Pa -1 It is adapted to the thermal conductivity characteristics of different sputtering gases (such as Ar and O2).

[0026] 2. Dynamic weighting coefficients Quantitative derivation: The deposition process is divided into three stages, each with different temperature response requirements: the heating stage (0, ): The temperature needs to approach the set temperature quickly, and the deviation weight should be relatively large; constant temperature stage ( High precision and stability are required; the deviation weight should be moderate and smooth; during the cooling stage ( ): Slow cooling is required to avoid sudden changes in film stress, and the deviation weight should be small.

[0027] Define the phase division: Set the heating time =10min=600s, isothermal time =50min=3000s, cooling time =10min=600s; The weighting function is designed as a piecewise continuous function: Heating phase (0≤ ≤600s): (Exponential growth, approaching 1 from 0.0067); Isothermal phase (600s < ≤3000s): =1.0 (fixed weight, ensuring accuracy); Cooling phase (3000s < ≤3600s): ; warming phase hour, ≈0.95, ensuring rapid approach to the set temperature; cooling phase At 3600s, ≈0.3, to avoid excessively rapid cooling that could lead to temperature overshoot.

[0028] 3. Noise suppression coefficient Quantitative derivation: High-frequency noise in temperature measurement signals (such as thermocouple electromagnetic interference and data transmission noise) is amplified by the derivative element of a traditional PID controller, causing control input oscillations. Introducing λ suppresses noise through "deviation nonlinear attenuation" without affecting the derivative adjustment of the effective deviation signal.

[0029] Define noise amplitude ℃, effective temperature deviation ℃ (based on thermocouple measurement accuracy ±0.1℃); Noise suppression target: when When the output of the differentiating element decays to less than 30% of its original output; when At that time, the output attenuation of the differential element does not exceed 10%; Traditional PID derivative output: ; Improved output of the differential element: ; right Taylor expansion (ignoring higher-order minterms): ; Substitute the noise suppression target: when hour, ; when hour, ; The optimal intermediate value is λ=2℃, which balances noise suppression and effective signal preservation.

[0030] In summary, this invention achieves precise temperature control of the chamber during sputtering deposition by integrating components such as a vacuum gauge, gas cylinder, valve, thermocouple temperature sensing element, and PID controller. The system utilizes thermocouples to monitor the chamber temperature in real time and automatically adjusts the heating wire power based on the comparison between the set value and the actual value using the PID controller, thereby maintaining a stable chamber temperature. Furthermore, the system has the ability to communicate with a host computer, enabling remote monitoring and control via software, thus improving the automation level and temperature control accuracy of the sputtering deposition process. This invention solves the problems of low temperature control accuracy, insufficient automation, and poor stability in existing technologies. Through the coordinated control of temperature, vacuum level, and gas flow rate, it ensures the consistency of thin film performance and is suitable for the large-scale production of high-precision thin films. For a detailed sputtering deposition process, please refer to [reference needed]. Figure 3 .

[0031] Specific embodiments of the present invention are as follows: Example 1: Structure and parameter configuration of an automated temperature control system.

[0032] This embodiment provides a specific construction scheme for an automated temperature control system for a sputtering deposition apparatus, adapted to the preparation process of SiO2-TiO2 composite optical thin films on the end face of semiconductor lasers.

[0033] 1.1 System Component Selection and Installation: Cavity assembly: The cavity is made of stainless steel and has an inner diameter of 500mm and a height of 800mm. The stage inside the cavity is a circular ceramic stage with a diameter of 150mm, which is used to support the Si substrate. Temperature monitoring module: Two K-type thermocouple temperature measuring elements are selected and embedded in the middle of the side wall of the cavity (50mm away from the stage) and the center of the bottom of the stage, respectively. The thermocouple measurement range is -50℃~500℃, accuracy is ±0.1℃, response time is 0.3s, and it is connected to the data processing unit through a high-temperature shielded wire. Heating module: Uses nickel-chromium alloy heating wire, which is arranged around the outer wall of the cavity, with a total power of 5kW. The heating drive unit uses a thyristor power regulator, with an output power adjustment range of 0~5kW, and is electrically connected to a PID regulator. Gas regulation module: High-purity argon gas (99.999% purity) cylinders are used; the gas flow controller is a mass flow controller with a range of 0~50 sccm and an accuracy of ±1%FS; the vacuum gauge is a capacitive vacuum gauge with a measurement range of 10... -5 Pa~1atm; both the intake and exhaust valves are electromagnetic vacuum valves with a response time ≤0.5s; Control module: The data processing unit uses an STM32F407 microcontroller with a built-in 16-bit ADC converter and a sampling frequency of 10Hz; the PID controller is an industrial-grade intelligent PID controller that supports online parameter tuning; the temperature deviation alarm unit uses an audible and visual alarm with an alarm threshold set to ±0.3℃ and a continuous alarm duration of 3s. Host computer: An industrial panel PC is used, which is equipped with monitoring software developed using LabVIEW. It is connected to the control module through an RS485 communication interface to realize parameter setting, data acquisition and curve display.

[0034] 1.2 System parameter initialization configuration: The process parameters for preparing SiO2-TiO2 composite optical thin films are set via a host computer: preset temperature value =120℃; Vacuum threshold =5×10⁻³Pa; Argon flow rate =30sccm; PID initial control parameters: =2.5, =5.0s, =0.8s.

[0035] Example 2: Preparation of SiO2-TiO2 composite thin films based on an automated temperature control system This embodiment uses the automated temperature control system built in Example 1 to prepare SiO2-TiO2 composite optical thin films and verify the temperature control accuracy and film performance consistency of the system.

[0036] Preparation steps: System initialization: Start the host computer monitoring software, input the preset process parameters, the system automatically loads the initial PID control parameters, checks the communication status of each module, and ensures that the equipment is operating normally; Vacuum environment setup: The control module issues a command to open the exhaust valve and start the vacuum pump to evacuate the cavity. The vacuum gauge collects the cavity vacuum level in real time and uploads it to the host computer; when the vacuum level reaches 5×10... -3 When the pressure reaches Pa, the exhaust valve automatically closes while the inlet valve opens, and the gas flow controller introduces argon gas at a flow rate of 30 sccm to maintain stable chamber pressure. Temperature regulation and stabilization: Thermocouple temperature sensing element collects cavity temperature in real time. and stage temperature The data processing unit calculates the average temperature. ,when At ℃, ℃, PID controller output control quantity Increase the heating wire power to 3.2kW and simultaneously increase the intake valve opening to 60%; as the temperature rises, $ΔT$ gradually decreases, and the PID controller dynamically adjusts the heating power and intake flow rate. When the temperature is stable at 120℃, the heating power is stable at 1.8kW, the air intake valve opening is stable at 45%, and the temperature fluctuation range is ±0.2℃. Sputtering deposition: Start the sputtering power supply and apply a target voltage of 400V. Argon gas is ionized under high voltage to produce Ar. + Ions bombard SiO2 and TiO2 targets, and target atoms are sputtered onto the surface of Si substrate. During the deposition process, the system continuously monitors the temperature and maintains temperature stability through PID closed-loop regulation. Process completion: After the deposition time reaches 60 minutes, the sputtering power supply is turned off, the heating wire stops working, the air inlet valve is closed, and the exhaust valve is opened to release the chamber pressure. After the chamber pressure returns to atmospheric pressure, the substrate is removed, and the composite film preparation is completed.

[0037] Experimental Results and Analysis: Temperature control accuracy: According to the data recorded by the host computer, the average temperature of the cavity during the deposition process is 120.0℃, the maximum temperature deviation is +0.2℃, the minimum temperature deviation is -0.1℃, and the temperature fluctuation is within the allowable range of ±0.3℃, which meets the temperature control requirements for high-precision thin film preparation. Thin film performance testing: The SiO2-TiO2 composite thin film prepared by ellipsometer measurement has a refractive index of 1.85 at a wavelength of 1310nm, which deviates from the design value of 1.84 by only 0.54%; the surface roughness of the thin film Ra=0.8nm is observed by atomic force microscopy, indicating that the thin film has high density and good uniformity. Repeatability verification: Five sets of composite films were prepared repeatedly using the same process parameters. The refractive indices of the films were 1.85, 1.84, 1.86, 1.85, and 1.84, respectively, with a standard deviation of 0.008. This indicates that the system has good repeatability and can ensure the consistency of film performance in mass production.

[0038] The above embodiments are merely descriptions of preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Any modifications, alterations, alterations, or substitutions made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. An automated temperature control system for a sputtering deposition apparatus, characterized in that, It includes a cavity assembly, a temperature monitoring module, a heating module, a gas regulation module, a control module, and a host computer; The cavity assembly is used to provide a sealed vacuum environment for sputter deposition, and it has a stage inside. The temperature monitoring module includes at least two thermocouple temperature sensing elements, which are respectively embedded in the inner wall of the cavity assembly and the bottom of the stage, for real-time acquisition of the cavity ambient temperature and the stage temperature. The heating module includes heating wires arranged around the outer wall of the cavity assembly; The gas regulation module is used to input sputtering gas into the cavity assembly and to regulate the gas flow rate and vacuum level inside the cavity assembly. The control module is used to coordinate and adjust the heating power, gas flow rate, and vacuum level. The host computer and the control module are connected via a communication interface.

2. An automated temperature control system for a sputtering deposition apparatus according to claim 1, characterized in that, The gas regulation module includes a gas cylinder, a vacuum gauge, an inlet valve, an exhaust valve, and a gas flow controller. The gas cylinder is connected to the cavity assembly via the inlet valve and the gas flow controller, and is used to introduce a preset type of sputtering gas into the cavity assembly. The vacuum gauge is located on the top of the cavity assembly and is used to monitor the vacuum level inside the cavity in real time. The exhaust valve is used to adjust the pressure inside the cavity assembly, and the gas flow controller is used to control the flow rate of the sputtering gas.

3. An automated temperature control system for a sputtering deposition apparatus according to claim 2, characterized in that, The control module includes a PID controller and a data processing unit. The data processing unit is electrically connected to the temperature monitoring module and the vacuum gauge, respectively, and is used to filter, amplify, and digitize the temperature detection signal and the vacuum signal. The PID controller is electrically connected to the data processing unit, the heating drive unit, the inlet valve, the exhaust valve, and the gas flow controller, respectively, and is used to output a control signal through a PID algorithm based on the deviation between the preset temperature value and the actual detected temperature, so as to realize the coordinated adjustment of heating power, gas flow rate, and vacuum degree.

4. An automated temperature control system and method for a sputtering deposition apparatus, applied to the automated temperature control system for a sputtering deposition apparatus as described in claim 3, characterized in that, Includes the following steps: Step 1: System initialization, setting the preset temperature value via the host computer. Vacuum degree threshold Gas flow rate and PID initial control parameters; Step 2: Vacuum environment setup. The control module opens the exhaust valve to evacuate the cavity components, and the vacuum gauge provides real-time feedback on the vacuum level. When the vacuum level reaches the preset threshold... At this time, the exhaust valve is closed while the intake valve is opened, and the gas flow controller operates according to the set flow rate. Introduce sputtering gas; Step 3: Temperature monitoring and deviation calculation; thermocouple temperature sensing element collects cavity temperature in real time. and stage temperature The data processing unit processes the acquired temperature signals and calculates the average temperature. And obtain the temperature deviation. ; Step 4: PID closed-loop control. The PID controller calculates the output control quantity based on the temperature deviation using an improved PID control algorithm. The expression for the improved PID control algorithm is: ； in, For output control quantity, This is the proportionality coefficient. For integration time, For differential time, The vacuum coupling coefficient is... For dynamic weighting coefficients, This is the noise suppression coefficient; According to the control quantity Adjust the output power of the heating wire, and simultaneously adjust the opening of the air inlet valve and the gas flow rate to stabilize the cavity temperature at the preset value. ; Step 5: Process monitoring and parameter optimization. The host computer displays temperature data, vacuum data and equipment operating status in real time. If the temperature deviation continues to exceed the allowable range, the PID controller will automatically start the parameter tuning program to optimize its parameters until the temperature deviation returns to within ±0.3℃. Step 6: Process completed. After sputtering deposition, the control module stops the heating wire, closes the inlet valve, opens the exhaust valve to release the chamber pressure, and the system returns to its initial state.

5. An automated temperature control system and method for a sputtering deposition apparatus according to claim 4, characterized in that, In step 4, when At that time, the PID controller reduces the output control quantity. Reduce the heating wire power and simultaneously decrease the intake valve opening; when At that time, increase the output control quantity Increase the power of the heating wire and increase the opening of the intake valve.

6. An automated temperature control system and method for a sputtering deposition apparatus according to claim 4, characterized in that, In step 4, the vacuum coupling coefficient satisfy: ； in, For the maximum vacuum deviation, This represents the change in heating power corresponding to the temperature deviation.

7. An automated temperature control system and method for a sputtering deposition apparatus according to claim 4, characterized in that, In step 4, the dynamic weighting coefficients The value can be: Warming phase: ; Constant temperature stage: ; Cooling phase: .

8. An automated temperature control system and method for a sputtering deposition apparatus according to claim 4, characterized in that, In step 4, the noise suppression coefficient =2℃.

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