Semiconductor thin film processing equipment and semiconductor thin film deposition method

Abstract

The embodiment of the invention provides semiconductor thin film processing equipment and a semiconductor thin film deposition method. The semiconductor thin film processing equipment comprises a chamber base, a cover body, a gas distribution assembly and a bearing part, and the chamber base is provided with a top opening and a film conveying opening; the cover body is detachably arranged at the top opening, a reaction cavity is formed between the cover body and the cavity base, and a mounting groove is formed in the cover body; the gas distribution assembly is mounted in the mounting groove, a separator of the gas distribution assembly comprises a central part and a plurality of branch parts connected to the central part at intervals, projection parts of the plurality of branch parts on the chamber base at least divide the reaction chamber into a first reaction area and a second reaction area, the first reaction area is used for converging reaction gas, and the second reaction area is used for converging reaction gas. The second reaction area is used for gathering metal source gas and avoiding the substrate conveying opening, metal sources such as a liquid source or a solid source can be effectively prevented from being deposited at the substrate conveying channel opening, and the substrate conveying efficiency and the sealing performance of the substrate conveying opening are improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically, it relates to a semiconductor thin film processing apparatus and a semiconductor thin film deposition method. Background Technology

[0002] In the semiconductor manufacturing industry, semiconductor thin film deposition is a critical process. Specifically, in semiconductor thin film processing equipment, substrates such as wafers need to be transferred to the reaction chamber through a transfer port, and then thin film deposition operations are performed on the substrates.

[0003] However, in actual process reactions, liquid or solid source materials are prone to depositing at the wafer transfer port. As the equipment operates for a long time, deposits accumulate at the wafer transfer port, which not only affects the wafer transfer efficiency but also impacts the sealing of the transfer port, leading to gas leakage within the reaction chamber, disrupting the stability of the reaction environment, and consequently affecting the quality and uniformity of thin film deposition.

[0004] Therefore, solving the wafer transfer port deposition problem is crucial for improving the performance and reliability of semiconductor thin film processing equipment. Summary of the Invention

[0005] One objective of this application is to provide a new technical solution for semiconductor thin film processing equipment and semiconductor thin film deposition method.

[0006] According to a first aspect of the embodiments of this application, a semiconductor thin film processing apparatus is provided, comprising: A chamber base having a top opening and a transfer port; A cover body, which is detachably disposed at the top opening and forms a reaction chamber between the cover body and the chamber base, and the cover body is provided with a mounting groove; The valve distribution assembly is installed in the mounting slot. The gas distribution assembly includes a separator, which includes a central portion and multiple branches spaced apart and connected to the central portion. The projection portions of the multiple branches on the chamber base divide the reaction chamber into at least a first reaction region and a second reaction region. The first reaction region is used to collect the reaction gas, and the second reaction region is used to collect the metal source gas and avoid the plate transfer port.

[0007] Optionally, the gas distribution assembly has an inlet end and an outlet end, wherein the inlet end is located outside the reaction chamber and the outlet end is connected to the reaction chamber; The air inlet of the air distribution assembly includes a central air inlet located on the central portion and a branch air inlet located on the branch portion. The air outlet of the air distribution assembly includes a central air outlet located on the central portion and a branch air outlet located on the branch portion. The central air outlet is connected to the central air inlet, and the branch air outlet is connected to the branch air inlet. The central air intake and the branch air intakes are independent.

[0008] Optionally, the plurality of branches include a first branch and a second branch, the first branch and the second branch being connected to the central portion at intervals, and the included angle between the first branch and the second branch being 45°-180°.

[0009] Optionally, the central angle corresponding to the first reaction region is greater than the central angle corresponding to the second reaction region.

[0010] Optionally, the plurality of branches include a first branch, a second branch, and a third branch, which are connected to the central portion at intervals. The projection portions of the plurality of branches on the chamber base divide the reaction chamber into a first reaction region, a second reaction region, and a control region, wherein the control region is used to collect control gas.

[0011] Optionally, the central angle corresponding to the first reaction region is greater than the central angle corresponding to the control region, and the central angle corresponding to the second reaction region is greater than the central angle corresponding to the control region.

[0012] Optionally, the central angle corresponding to the first reaction region is 60°-165°, and the central angle corresponding to the second reaction region is 60°-165°.

[0013] Optionally, the gas distribution assembly includes a first gas distribution element, a second gas distribution element, and a regulating gas distribution element. The first gas distribution element is disposed in a portion of the mounting groove and is opposite to the first reaction region. The second gas distribution element is disposed in a portion of the mounting groove and is opposite to the second reaction region. The regulating gas distribution element is disposed in a portion of the mounting groove and is opposite to the regulating region.

[0014] Optionally, the transfer port is opposite to the first reaction region.

[0015] Optionally, the branch section has a branch air passage, which includes at least one branch air inlet located on the air inlet side of the branch section and a plurality of branch air outlets located on the air outlet side of the branch section. The branch outlet side includes multiple strip-shaped protrusions, which are spaced apart in the circumferential direction of the separator, and the multiple branch outlets are disposed on the multiple strip-shaped protrusions.

[0016] Optionally, the branch air inlet is located at one end of the branch air inlet side near the center.

[0017] Optionally, the branch air path includes a partition gas buffer chamber disposed within the branch section, and the branch air inlet is connected to the plurality of branch air outlets through the partition gas buffer chamber.

[0018] Optionally, the central part has a central air passage, which includes at least one central air inlet located on the air inlet side of the central part and a plurality of central air outlets located on the air outlet side of the central part. The multiple central air outlets are arranged in multiple rows and are corresponding to the multiple branch air outlets.

[0019] Optionally, the semiconductor thin film processing equipment is a thin film deposition equipment or a thin film etching equipment.

[0020] According to a second aspect of the present application, a semiconductor thin film deposition method is provided, applied to the semiconductor thin film processing apparatus described in the first aspect, the semiconductor thin film deposition method comprising: The first substrate is transmitted to the carrier unit through the transfer port; Rotate the support portion to transfer the first substrate to the second reaction region; The second substrate is transferred to the carrier through the transfer port, and the second substrate is located in the first reaction region; The second reaction area avoids the transfer port.

[0021] Optionally, the reaction chamber further includes a control region for concentrating catalyst gas, and the process of the semiconductor thin film deposition method includes: The carrier is rotated so that the substrate passes sequentially through the second reaction region, the control region, and the first reaction region.

[0022] Optionally, the reaction chamber further includes a control region for concentrating inhibitor gas, and the process of the semiconductor thin film deposition method includes: The carrier is rotated counterclockwise so that the substrate passes through the control region, the second reaction region and the first reaction region in sequence.

[0023] One technical advantage of this application is: This application provides a semiconductor thin film processing apparatus, which includes a chamber base, a cover, a gas distribution assembly, and a support. The chamber base has a top opening and a wafer transfer port. The cover is detachably disposed at the top opening and forms a reaction chamber with the chamber base. The cover has a mounting groove. The gas distribution assembly is installed in the mounting groove. The gas distribution assembly's separator includes a central portion and multiple branches spaced apart and connected to the central portion. The projection portions of the multiple branches on the chamber base divide the reaction chamber into at least a first reaction region and a second reaction region. The first reaction region is used to collect reaction gas, and the second reaction region is used to collect metal source gas and avoid the wafer transfer port. This effectively prevents the deposition of liquid or solid metal sources at the wafer transfer port, improves the wafer transfer efficiency and the sealing of the wafer transfer port, ensures the stability of the reaction environment in the reaction chamber, and thus improves the quality and uniformity of thin film deposition on the substrate.

[0024] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0025] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0026] Figure 1 An exploded view of a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 2 An exploded view of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 3 A side view of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 4 A top view of another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 5 A schematic diagram of a separator in a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 6 A schematic diagram of a separator for another semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 7 A three-dimensional gas distribution assembly for a semiconductor thin film processing apparatus is provided as an embodiment of this application. Figure 1 ; Figure 8 A three-dimensional gas distribution assembly for a semiconductor thin film processing apparatus is provided as an embodiment of this application. Figure 2 ; Figure 9A bottom view of a gas distribution assembly for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 10 for Figure 9 Cross-sectional view at point AA; Figure 11 A top view of a gas distribution assembly for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 12 for Figure 11 Cross-sectional view at point BB; Figure 13 for Figure 11 A magnified view of a portion of the image; Figure 14 A schematic diagram of a chamber base for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 15 A cross-sectional view of a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 16 A schematic diagram illustrating the fit between a gas distribution assembly and a cover of a semiconductor thin film processing apparatus according to an embodiment of this application; Figure 17 for Figure 16 Cross-sectional view at point C; Figure 18 for Figure 8 A magnified view of a portion of the image.

[0027] in: 1. Chamber base; 11. Top opening; 12. Transfer port; 101. First reaction zone; 102. Second reaction zone; 103. Transfer zone; 104. Control zone; 2. Cover; 21. Mounting slot; 3. Gas distribution assembly; 31. Separator; 311. Central part; 312. Branch part; 3121. First branch; 3122. Second branch; 3123. Third branch; 32. First gas distribution component; 33. Second gas distribution component; 34. Regulating gas distribution component; 4. Supporting part; 41. Boss; 3111, Center air inlet; 3112, Center air outlet; 31201, Branch air inlet; 31202, Branch air outlet; 31203, Strip-shaped protrusion; 3124, Separating air buffer chamber; 3125, Connecting hole; 313, Recessed area. Detailed Implementation

[0028] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0029] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0030] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0031] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0032] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0033] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0034] In semiconductor thin film processing equipment, substrates such as wafers need to be transferred to the reaction chamber through a transfer port before thin film deposition is performed on the substrate. However, in traditional processes, liquid or solid source materials tend to deposit at the transfer port. As the semiconductor thin film processing equipment operates for extended periods, these deposits accumulate at the transfer port, affecting not only the substrate transfer efficiency but also the sealing performance of the transfer port.

[0035] The second reaction region of the semiconductor thin film processing equipment provided in this application avoids the wafer transfer port, which can effectively prevent liquid or solid sources from depositing at the wafer transfer channel opening, thereby improving the wafer transfer efficiency and the sealing performance of the wafer transfer port.

[0036] Reference Figure 1 This application provides a semiconductor thin film processing apparatus, which can be a spatial ALD (ALD) apparatus or a semiconductor etching apparatus. The semiconductor thin film processing apparatus includes: The chamber base 1 has a top opening 11 and a transfer port 12. The cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber between it and the chamber base 1. The cover 2 is provided with an installation groove 21. Gas distribution assembly 3 is installed in mounting groove 21. Gas distribution assembly 3 includes a separator 31. The separator 31 includes a central portion 311 and multiple branches 312 spaced apart from the central portion 311. The projection of the multiple branches 312 on the chamber base 1 divides the reaction chamber into at least a first reaction region 101 and a second reaction region 102. The first reaction region 101 is used to collect the reaction gas, and the second reaction region 102 is used to collect the metal source gas and avoid the transfer port 12.

[0037] In the above embodiments, the top opening 11 of the chamber base 1 provides an installation position for the cover 2. The chamber base 1 and the cover 2 cooperate to form a reaction chamber, providing a closed space for the semiconductor thin film deposition reaction; see also Figure 2 and Figure 3 The wafer transfer port 12 is the channel for substrates such as wafers to enter and exit the reaction chamber. It facilitates the transfer of substrates during the process, ensuring smooth entry into the reaction chamber for thin film deposition and allowing for easy exit after thin film deposition. The reaction gas can be oxygen, ozone, hydrogen peroxide, or deionized water, and the metal source gas can be an organometallic compound, an oxygen-containing inorganic compound, or a metal halide. See also... Figure 4 The first reaction region 101 and the second reaction region 102 are adjacent fan-shaped regions within the reaction chamber separated by the branch 312. The transfer port 12 corresponds to the fan-shaped transfer region 103 within the reaction chamber (e.g., ...). Figure 4The area enclosed by the dashed line), and the second reaction region 102 avoids the transfer port 12, that is, the transfer region 103 does not overlap with the second reaction region 102; since the metal source gas is isolated in the second reaction region by the separator 31, the metal source gas in the second reaction region will not flow to the transfer port 12, avoiding the deposition of viscous liquid or solid metal sources at the transfer port 12; the transfer region 103 may overlap with a part of the first reaction region 101, or the transfer region 103 may overlap with the entire area of ​​the first reaction region 101.

[0038] See Figure 1 and Figure 2 The cover 2 is detachably disposed at the top opening 11. When the cover 2 is assembled to the top opening 11 of the chamber base 1, the chamber base 1 and the cover 2 cooperate to form a reaction chamber, so that the substrate can be deposited in the reaction chamber and the environment of the thin film deposition reaction can be kept stable. When the cover 2 is removed from the top opening 11 of the chamber base 1, it is convenient to maintain, clean and replace the parts inside the reaction chamber. The mounting groove 21 can include multiple strip grooves to form a reaction chamber with the chamber base 1. The mounting groove 21 provides space for the installation of the gas distribution assembly 3, ensuring that the gas distribution assembly 3 can be accurately installed and stably introduced into the reaction chamber.

[0039] In the above embodiments, the top surface of the gas distribution component 3 may be provided with one or more air inlets forming an air inlet end. The air inlet end of the gas distribution component 3 is located outside the reaction chamber, so as to connect to an external gas source through the air inlet end of the gas distribution component 3 to obtain the gas required for purging and reaction. The bottom surface of the gas distribution component 3 may be provided with one or more air outlets forming an air outlet end. The air outlet end of the gas distribution component 3 is connected to the reaction chamber to accurately introduce the gas provided by the external gas source into the reaction chamber, providing gas raw materials for the thin film deposition reaction and ensuring that the thin film deposition reaction can proceed normally.

[0040] In some embodiments, the semiconductor thin film processing apparatus further includes a support portion 4, which is rotatably disposed in the reaction chamber and used to support the substrate.

[0041] See Figure 1 The support portion 4 can be provided with one or more substrate support areas, which provide a stable placement position for the substrate within the reaction chamber. The support portion 4 can rotate counterclockwise or clockwise within the reaction chamber, so that each substrate support area sequentially passes through different reaction regions. In one embodiment, during the thin film deposition process, the support portion 4 can move along... Figure 1 The counterclockwise rotation indicated by the middle arrow within the reaction chamber allows the substrate to move along a circular trajectory within the chamber. This facilitates alternating and thorough contact between the substrate and the reactive gas and the metal source gas, resulting in uniform deposition of the source material film on the substrate and improving the quality and uniformity of the film deposition.

[0042] In the above embodiment, the projection of the branch 312 onto the chamber base 1 can be the connection area between the branch 312 and its vertical projection onto the chamber base 1. See also Figure 1 and Figure 2 The separator 31 is supplied with a separating gas at its inlet end. Nitrogen or argon, among other separating gases, can enter the reaction chamber through the outlet end of the separator 31 in the form of an air curtain, thereby separating the reaction chamber into a fan-shaped first reaction region and a fan-shaped second reaction region. The center 311 of the separator 31 is opposite to the center of the chamber base 1. The first reaction region concentrates the reaction gas, which facilitates the reaction between the reaction gas and the metal source material on the substrate when the substrate rotates to the first reaction region, improving the reaction efficiency of thin film deposition. The second reaction region avoids the transfer port 12, preventing volatile liquid or solid metal sources from depositing at the transfer port 12 during the reaction process, effectively solving the problem of source material deposition at the transfer port 12, and thus improving the substrate transfer efficiency. Furthermore, keeping the transfer port 12 clean helps ensure its sealing and maintains the stability of the reaction environment within the reaction chamber.

[0043] In some embodiments, the number of transfer ports 12 can be one or more. For example, if the number of transfer ports 12 is one, that is, one substrate is transferred to the reaction cavity each time, which can ensure the stability of substrate transfer; or, if the number of transfer ports 12 is two, three or more, that is, two, three or more substrates are transferred to the reaction cavity each time, which can ensure improved substrate transfer efficiency.

[0044] The semiconductor thin film processing apparatus provided in this application includes a chamber base 1, a cover 2, a gas distribution assembly 3, and a support 4. The chamber base 1 has a top opening 11 and a wafer transfer port 12. The cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber with the chamber base 1. The cover 2 is provided with a mounting groove 21. The gas distribution assembly 3 has an inlet end and an outlet end. The gas distribution assembly 3 is installed in the mounting groove 21, with the inlet end located outside the reaction chamber and the outlet end connected to the reaction chamber. The support 4 is rotatably disposed in the reaction chamber and used to support the substrate. The gas distribution assembly 3... The separator 31 includes a central portion 311 and multiple branches 312 spaced apart from the central portion 311. The projection of the multiple branches 312 on the chamber base 1 divides the reaction chamber into at least a first reaction region and a second reaction region. The first reaction region is used to collect reaction gases, and the second reaction region avoids the transfer port 12. This can effectively prevent liquid or solid sources from depositing at the transfer port, improve the transfer efficiency of the substrate and the sealing of the transfer port, ensure the stability of the reaction environment in the reaction chamber, and thus improve the quality and uniformity of thin film deposition on the substrate.

[0045] In some embodiments, see Figure 1 and Figure 2 The gas distribution assembly 3 has an inlet end and an outlet end, with the inlet end located outside the reaction chamber and the outlet end connected to the reaction chamber. The air inlet end of the air distribution assembly 3 includes a central air inlet end located on the central part 311 and a branch air inlet end located on the branch part 312. The air outlet end of the air distribution assembly 3 includes a central air outlet end located on the central part 311 and a branch air outlet end located on the branch part 312. The central air outlet end is connected to the central air inlet end, and the branch air outlet end is connected to the branch air inlet end. The central air intake and the branch air intakes are independent.

[0046] In the above embodiment, the central part 311 and the branch part 312 are respectively provided with an air inlet and an air outlet, so that the separating gas can enter the gas distribution component 3 from different positions. By introducing multiple air inlets at multiple positions, multiple separating gases or various separating gases with different properties can be introduced to ensure the effective separation of the continuously introduced reaction gas and the metal source gas, providing a suitable gas supply for different first reaction zones, which helps to achieve precise control of the thin film deposition process.

[0047] The independent gas inlet at the central inlet and branch inlet provided in this embodiment allows for independent control of the gas introduced at each inlet, including control of parameters such as the type, flow rate, and pressure of the gas. Specifically, the independent control method for the gas introduced at the central inlet and branch inlet can be adjusted according to the specific requirements of the thin film deposition process. For example, suitable types and pressures of gas can be supplied to areas requiring different gas pressures, thereby better meeting the separation requirements of the reactant gas and the metal source gas, and improving the performance and quality of the thin film deposition.

[0048] In some embodiments, see Figure 1 and Figure 5 The multiple branches 312 include a first branch 3121 and a second branch 3122, the first branch 3121 and the second branch 3122 are connected to the central portion 311 at intervals, and the included angle between the first branch 3121 and the second branch 3122 is 45°-180°.

[0049] In the above embodiments, the multiple branches 312 are divided into a first branch 3121 and a second branch 3122 or more branches, so as to divide the reaction chamber into different regions according to actual process requirements, providing a basis for the subsequent realization of diversified thin film deposition processes, and making the semiconductor thin film processing equipment more adaptable and flexible in dealing with different thin film materials and deposition requirements.

[0050] In some embodiments, the included angle between the first branch 3121 and the second branch 3122 is taken from the range of 45° to 180°. Specifically, the included angle between the first branch and the second branch can be flexibly adjusted according to factors such as the thin film material, the thin film deposition rate, and the uniformity of the thin film thickness. For example, when the included angle between the first branch 3121 and the second branch 3122 is 45°, a compact region is formed between the first branch 3121 and the second branch 3122. The smaller included angle helps to form a concentrated gas flow in this region. For thin film deposition processes that require local high-concentration gas reactions, this region can better meet the process requirements and improve the efficiency of the thin film deposition reaction. In the above embodiments, the separator 31 may include a V-shaped separator and a straight separator. For example, the angle between the first branch 3121 and the second branch 3122 is greater than or equal to 45° and less than 180°, to form a shape such as... Figure 5 The V-shaped divider shown; or the angle between the first branch 3121 and the second branch 3122 is 180° to form a straight divider.

[0051] In some embodiments, the central angle corresponding to the first reaction region 101 is greater than the central angle corresponding to the second reaction region 102.

[0052] In the above embodiments, the included angle between the first branch 3121 and the second branch 3122 is 45°-180°, which can divide the reaction chamber into a larger first reaction region 101 and a smaller second reaction region 102. In the above embodiments, the reactivity of the metal source gas is greater than that of the reactant gas. The larger first reaction region provides more space for the reactant gas to converge, diffuse, and react fully, which is beneficial to increasing the contact probability and reaction efficiency between the reactant gas and the metal source gas, thereby increasing the thin film deposition rate and improving the production efficiency of the semiconductor thin film processing equipment.

[0053] The second reaction zone has a relatively small central angle, which can reduce the deposition of metal source near the transfer port while meeting the metal source supply requirements. This ensures the substrate transfer efficiency and the sealing of the transfer port, and facilitates the maintenance of the stability of the reaction environment in the reaction chamber.

[0054] In other embodiments, the reactivity of the reactant gas is greater than that of the metal source gas. Alternatively, the central angle of the second reaction region 102 can be set to be greater than that of the first reaction region 101 to ensure the reaction efficiency between the metal source gas and the reactant gas.

[0055] In some embodiments, see Figure 4 and Figure 6The multiple branches 312 include a first branch 3121, a second branch 3122 and a third branch 3123, which are connected to the central part 311 at intervals. The projection of the multiple branches 312 on the chamber base 1 divides the reaction chamber into a first reaction region 101, a second reaction region 102 and a control region 104. The control region 104 is used to collect and control the gas.

[0056] In the above embodiments, the projection portions of the first branch 3121, the second branch 3122, and the third branch 3123 on the chamber base 1 divide the reaction chamber into a first reaction region, a second reaction region, and a control region. This allows the reactant gas to concentrate and react fully in the first reaction region, the metal source gas to concentrate in the second reaction region, and the control gas to concentrate in the control region. This optimizes the flow path and residence time of each gas, improves the efficiency of the thin film deposition reaction, and ensures that the thin film is deposited on the substrate in the expected manner, thereby obtaining a high-quality thin film deposition substrate.

[0057] In the above embodiments, the control gas can be a catalyst gas or an inhibitor gas. The catalyst gas can accelerate the reaction rate and improve the film deposition efficiency; the inhibitor gas can control the growth rate of the film or inhibit the occurrence of side reactions, thereby optimizing the microstructure and performance of the film and achieving fine control of the film deposition process.

[0058] In one embodiment, when the control gas is a catalyst gas, the catalyst gas can lower the activation energy of the reaction and accelerate the reaction rate. See [link to relevant documentation]. Figure 4 For example, the carrier part 4 rotates clockwise within the reaction chamber. After passing through the second reaction region 102, the substrate rotates to the control region 104. The catalyst gas and the metal source gas first react to generate an intermediate, which then reacts with the reactant gas to form a film. This forms a reaction sequence of metal source → catalyst → reactant gas, enabling rapid and efficient film growth under lower temperature or pressure conditions and improving film deposition efficiency. Furthermore, the catalyst gas can also improve the crystallinity and surface morphology of the film, enhancing its performance.

[0059] In one embodiment, when the control gas is a suppressor gas, the suppressor gas can inhibit the growth rate of the metal source material at the deep orifice of the groove, achieving uniform deposition of the high aspect ratio groove and making the film growth more uniform and orderly. See also Figure 4For example, the carrier part 4 rotates counterclockwise in the reaction chamber, and the substrate rotates to the second reaction region 102 after passing through the control region 104. Then the metal source gas reacts with the reaction gas to form a film, forming a reaction sequence of inhibitor → metal source → reaction gas. When preparing multilayer films or films with complex structures, the inhibitor gas can precisely control the thickness of each film layer and the interface quality.

[0060] In some embodiments, the central angle corresponding to the first reaction region is greater than the central angle corresponding to the control region, and the central angle corresponding to the second reaction region is greater than the central angle corresponding to the control region.

[0061] In the above embodiments, the first reaction region has a larger spatial area than the control region, allowing the reactant gases more space for thorough mixing, diffusion, and reaction. This increases the probability of collisions between reactant gas molecules and metal source gas molecules, thereby improving the sufficiency and efficiency of the reaction. This is beneficial for generating more high-quality thin film materials and increasing the rate and yield of thin film deposition. The second reaction region also has a larger spatial area than the control region. When introducing liquid or solid metal source materials, the second reaction region helps ensure that the metal source can react stably and uniformly with the reactant gases on the substrate, guaranteeing the stability and repeatability of the thin film deposition process and improving product quality and production efficiency.

[0062] In some embodiments, the central angle corresponding to the first reaction region is 60°-165°, the central angle corresponding to the second reaction region is 60°-165°, and the central angle corresponding to the first reaction region is equal to the central angle corresponding to the second reaction region.

[0063] In the above embodiments, the central angle of the first reaction region, ranging from 60° to 165°, provides ample reaction space for the reactant gas. For example, the central angle of the first reaction region can be 75°, 90°, 120°, 135°, or 150°. This ensures that the amount of reactant gas is not insufficient due to a small space in the first reaction region, nor that the reactant gas diffuses excessively due to a large space, thereby reducing the effective collision probability between reactant gas molecules and improving the sufficiency and uniformity of the thin film deposition reaction. Similarly, the central angle of the second reaction region, ranging from 60° to 165°, provides ample deposition space for the metal source gas. For example, the central angle of the second reaction region can be 75°, 90°, 120°, 135°, or 150°, ensuring that the metal source has sufficient space for stable and uniform deposition, thus improving the quality and efficiency of thin film deposition.

[0064] In one embodiment, when the central angles of the first reaction region and the second reaction region are equal, the overall layout of the reaction chamber is more symmetrical, which helps to maintain force balance and airflow stability during equipment operation, reduces equipment vibration, airflow turbulence and other problems caused by asymmetrical layout, and improves the operational stability and reliability of the equipment.

[0065] In some embodiments, see Figures 2 to 4 The gas distribution assembly 3 includes a first gas distribution component 32, a second gas distribution component 33, and a regulating gas distribution component 34. The first gas distribution component 32 is disposed in a portion of the mounting groove 21 and is opposite to the first reaction area. The second gas distribution component 33 is disposed in a portion of the mounting groove 21 and is opposite to the second reaction area. The regulating gas distribution component 34 is disposed in a portion of the mounting groove 21 and is opposite to the regulating area.

[0066] In the above embodiments, the first gas distribution component 32 may include one or more gas distribution components corresponding to the first reaction region, and the second gas distribution component 33 may include one or more gas distribution components corresponding to the second reaction region. In this embodiment, the gas distribution assembly 3 is configured with three gas distribution components for different types of gases, achieving independent and precise control of different functional gases. The reaction gas delivered by the first gas distribution component 32 is a gas such as ozone or ammonia that participates in the thin film deposition reaction. The metal source gas delivered by the second gas distribution component 33 is used to provide the liquid or solid source gaseous substances required for the reaction. The regulating gas distribution component 34 delivers a regulating gas such as a catalyst gas or an inhibitor gas to regulate the reaction process, ensuring that each gas is precisely supplied according to specific parameters such as flow rate, pressure, and time. This meets the diverse gas requirements of different thin film deposition processes, improves the flexibility and controllability of the process, and helps to obtain high-quality, stable thin films on the substrate.

[0067] In some embodiments, the transfer port 12 is opposite to the first reaction region, so that after the substrate enters the reaction chamber through the transfer port 12, it can directly and quickly reach the first reaction region, reducing the transfer path and transfer time of the substrate in the reaction chamber, improving the transfer efficiency, shortening the cycle of the entire thin film deposition process, and helping to improve production efficiency.

[0068] In one embodiment, the fan-shaped region corresponding to the first reaction region 101 can completely overlap with the fan-shaped region corresponding to the transfer port 12, so that the substrate entering the cavity can directly reach the first reaction region 101; in another embodiment, the fan-shaped region corresponding to the transfer port 12 overlaps with part of the fan-shaped region corresponding to the first reaction region 101, that is, the fan-shaped region corresponding to the first reaction region 101 is larger than the fan-shaped region corresponding to the transfer port 12, so as to increase the area of ​​the first reaction region 101 and improve the efficiency of thin film deposition.

[0069] Reference Figure 7 and Figure 8 This application provides a gas distribution assembly 3 for a semiconductor thin film processing apparatus, the gas distribution assembly 3 comprising: The separator 31 includes a central portion 311 and a plurality of branches 312 spaced apart and connected to the central portion 311. The branch section 312 has a branch air passage, which includes at least one branch air inlet 31201 located on the air inlet side of the branch section 312 and multiple branch air outlets 31202 located on the air outlet side of the branch section 312. The multiple branch air outlets 31202 are connected to the branch air inlet 31201. See Figure 17 The branch section 312 has multiple strip-shaped protrusions 31203 on the air outlet side. The multiple strip-shaped protrusions 31203 are arranged at intervals in the circumferential direction of the separator 31. Multiple branch air outlets 31202 are disposed on the multiple strip-shaped protrusions 31203.

[0070] See Figure 7 The top air inlet of the separator 31 can be provided with one or more air inlets. The air inlet of the separator 31 is located outside the reaction chamber so that it can be connected to an external gas source to obtain the gas required for isolation. The bottom air outlet of the separator 31 can be provided with one or more air outlets. The air outlet of the separator 31 is connected to the reaction chamber of the semiconductor thin film processing equipment, which can accurately introduce the gas provided by the external gas source into the reaction chamber and effectively separate the different reaction gases of the thin film deposition reaction in the reaction chamber to ensure that the thin film deposition reaction on the substrate can proceed normally.

[0071] In the above embodiments, the separator 31 includes a central portion 311 and multiple branches 312 spaced apart and connected to the central portion 311. The multiple branches 312 can be integrally formed with the central portion 311, for example, by die casting or casting to create an integral separator 31. The central portion 311 serves to connect and support the branches 312, ensuring the structural integrity of the separator 31. Alternatively, the multiple branches 312 and the central portion 311 can be formed independently, improving the flexibility of the layout of the branches 312 and the central portion 311, while also helping to maintain the structural strength of the cover on which the separator 31 is located. Furthermore, the spaced design of the multiple branches 312 increases the paths and areas for gas distribution and separation, facilitating more comprehensive separation of different reactive gases.

[0072] See Figure 7 and Figure 8The branch inlet 31201 of the branch gas path is the inlet for gas to enter the branch gas path to introduce isolation gas; the multiple branch outlets 31202 of the branch gas path distribute the isolation gas to the separation positions. The embodiment of this application, through the branch gas path structure design from at least one inlet to multiple outlets, can realize the dispersed output of isolation gas, so as to facilitate the subsequent formation of separation structures such as air curtains.

[0073] In the above embodiments, the separator 31 can be a radial structure with the central portion 311 as the center and the branch portion 312 as the radius. The projection of the branch portion 312 on the base of the reaction chamber divides the reaction chamber into multiple reaction regions. Specifically, the separator 31 is supplied with a separating gas at its inlet end. Separating gases such as nitrogen or argon can enter the reaction chamber through the outlet end of the separator 31 in the form of an air curtain, thereby separating the reaction chamber into multiple fan-shaped reaction regions.

[0074] See Figure 16 and Figure 17 Multiple strip-shaped protrusions 31203 on each branch 312 are arranged at intervals in the circumferential direction of the separator 31, forming a gap structure between adjacent strip-shaped protrusions 31203. The gap structure and the strip-shaped protrusions 31203 work alternately. When the branch outlet 31202 outputs isolation gas, a high-pressure air curtain is formed at the strip-shaped protrusions 31203. The air curtain can form a gas barrier before the reactive gas reaches the substrate surface, effectively preventing different reactive gases from mixing and avoiding premature reaction. Meanwhile, a low-pressure area is formed at the gap structure, which plays a role in transitioning and buffering the airflow, making the air curtain more stable and uniform. As a result, a high-pressure and low-pressure air curtain is obtained between adjacent reaction areas. When different reactive gases encounter this air curtain, they are blocked on both sides of the air curtain and cannot mix with each other, thereby preventing different reactive gases from reacting prematurely. This further enhances the separation effect between different reactive gases and ensures the uniformity of thin film deposition and the quality of the thin film.

[0075] In some embodiments, see Figure 11 and Figure 12 The branch air intake 31201 is located on the air intake side of the branch 312 near the center 311.

[0076] In the above embodiment, the isolation gas can enter the branch gas path from the air inlet side of the branch 312 near the center 311, which is conducive to the smooth delivery of the isolation gas in the branch 312 from one end near the center 311 to the other end away from the center 311. This ensures that the isolation gas is evenly discharged through multiple branch outlets 31202 in the extension direction of the branch 312, which facilitates the control of the isolation gas flow rate and pressure, and ensures that the isolation gas forms a stable separating air curtain.

[0077] In some embodiments, the branch section 312 may have multiple branch air inlets 31201 on the air inlet side to increase the air intake flow rate of the branch section 312. The multiple branch air inlets 31201 may all be located at the end of the branch section 312 near the center section 311 to improve the flow efficiency of the isolation gas in the branch section 312; or, a portion of the multiple branch air inlets 31201 may be located at the end of the branch section 312 near the center section 311, while another portion may be located in the middle of the branch section 312's air inlet side, thereby enhancing the purge gas volume at the end of the branch section 312 away from the center section 311.

[0078] In some embodiments, see Figures 9 to 12 The branch air path includes a partition gas buffer chamber 3124 disposed in the branch section 312, and the branch air inlet 31201 is connected to multiple branch air outlets 31202 through the partition gas buffer chamber 3124.

[0079] In the above embodiment, the isolation gas in the branch gas path enters from the branch inlet 31201 and first gathers in the separation gas buffer chamber 3124. The volume of the separation gas buffer chamber 3124 is larger than the volumes of the branch inlet 31201 and the branch outlet 31202. In other words, the separation gas buffer chamber 3124 can buffer and stabilize the purge airflow, preventing the isolation gas from rushing directly and quickly to the branch outlet 31202, reducing the turbulence and disturbance of the purge airflow, and allowing the isolation gas to flow out more smoothly and evenly from multiple branch outlets 31202, thereby improving the effectiveness of the isolation gas in separating adjacent reaction areas in the reaction chamber.

[0080] In some embodiments, see Figures 11 to 13 The branch air inlet 31201 extends circumferentially along the separator 31 and is connected to the separator air buffer chamber 3124 through multiple connecting holes 3125.

[0081] In the above embodiment, the branch air inlet 31201 extending circumferentially along the separator 31 enables the isolation gas to enter the branch air passage uniformly from the separator 31, avoiding the problem of excessively fast local airflow velocity or excessive pressure due to the excessive concentration of air inlet positions; at the same time, multiple connecting holes 3125 can also extend circumferentially along the separator 31 to disperse the large flow of isolation gas into multiple small flow of isolation gas before entering the separator gas buffer chamber 3124, further reducing the impact force of the airflow, thereby ensuring that the isolation gas has a uniform flow velocity and pressure distribution when entering the separator gas buffer chamber 3124.

[0082] In some embodiments, the separator gas buffer chamber 3124 can be a large-volume buffer chamber. One separator gas buffer chamber 3124 is connected to multiple connecting holes 3125 and can output the separator gas from the branch outlets 31202 on multiple strip-shaped protrusions 31203, ensuring a stable output of the separator gas. Alternatively, the separator gas buffer chamber 3124 can include multiple strip-shaped buffer chambers. Each connecting hole 3125 corresponds to a strip-shaped buffer chamber connected to a branch outlet 31202 on a strip-shaped protrusion 31203. This optimizes the flow path of the separator gas, reduces energy loss and turbulence of the separator gas during the buffering process, and enables the separator gas to reach the branch outlet 31202 more smoothly and be output into the reaction chamber.

[0083] In some embodiments, see Figures 7 to 10 The central part 311 has a central air passage, which includes at least one central air inlet 3111 located on the air inlet side of the central part 311 and a plurality of central air outlets 3112 located on the air outlet side of the central part 311. Multiple central air outlets 3112 are arranged in multiple rows and are correspondingly set with multiple branch air outlets 31202.

[0084] In the above embodiments, the central inlet 3111 is the starting port for the isolation gas to enter the central gas path, providing a channel for inert isolation gases such as nitrogen or argon to enter the gas distribution system. One central inlet 3111 can be connected to multiple central outlets 3112 through a central buffer chamber, which simplifies the structure of the central part 311 while ensuring the purging flow rate; alternatively, multiple central inlets 3111 can be connected to multiple central outlets 3112 through a central buffer chamber. Multiple central inlets 3111 can be supplied with the same isolation gas or different types of isolation gases, which not only increases the flow rate of the isolation gas but also facilitates independent control of the flow rate and pressure of different gases, improving the flexibility and controllability of the isolation gas control.

[0085] In some embodiments, see Figure 10 The central air inlet 3111 can deliver part of the isolation gas to the branch air outlet 31202 through the central buffer chamber, thereby increasing the flow rate of the isolation gas in the branch 312 and ensuring the separation effect of the separator 31 on the adjacent reaction areas.

[0086] In some embodiments, the air outlet side of the branch portion 312 is flush with the air outlet side of the central portion 311.

[0087] In the above embodiments, the branch portion 312 and the central portion 311, which are flush with each other on the gas outlet side, allow the isolation gas coming out of the central portion 311 and the branch portion 312 to be released simultaneously at similar spatial positions. This helps the isolation gas to diffuse and distribute more evenly in the reaction chamber, avoids the problem of uneven gas distribution caused by differences in gas outlet positions, improves the isolation effect on different reaction areas, and ensures the stability and consistency of the thin film deposition process.

[0088] In some embodiments, see Figure 17 and Figure 18 The outlet side of the branch 312 protrudes from the outlet side of the central part 311.

[0089] In the above embodiment, the gas outlet side of the branch 312 protrudes beyond the gas outlet side of the central portion 311, allowing the multiple strip-shaped protrusions 31203 to penetrate deeper into the reaction chamber. This enables the isolation gas to be more thoroughly purged and diffused in the region opposite the branch 312 within the reaction chamber. During the thin film deposition reaction, the region opposite the branch 312 is the separation region between adjacent reaction regions. This separation region is often where different reaction gases are prone to mixing and interference. The protruding gas outlet side of the branch 312 can more effectively form an isolation gas flow in this separation region, preventing gases from different reaction regions from mixing in this region and further improving the uniformity of thin film deposition.

[0090] In some embodiments, see Figures 7 to 17 The central part 311 and multiple branch parts 312 form a straight, V-shaped, Y-shaped or cross-shaped separator.

[0091] In the above embodiments, the partition structure composed of the central portion 311 and multiple branch portions 312 can adapt to the partitioning requirements of different reaction regions in the reaction chamber. The straight-line partition 31 has a simple structure and can roughly divide the reaction chamber into two main reaction regions, making it suitable for thin film deposition processes with simple partitioning requirements and fewer types of reaction gases. The straight-line partition 31 can quickly and effectively divide the reaction chamber, reduce gas mixing between different regions, and improve the stability and controllability of the reaction.

[0092] The V-shaped separator 31 can divide the reaction chamber into reaction regions of different volumes to accommodate the reaction and film deposition of reactive gases with different reactivity. For example, relatively reactive gases can be collected in relatively small reaction regions, while relatively less reactive gases can be collected in relatively large reaction regions.

[0093] The Y-shaped separator 31 can divide the reaction chamber into three relatively independent reaction zones. Each reaction zone can be independently controlled and adjusted according to specific process requirements. Inhibitors or catalysts can also be added to control the reaction activity, improving the uniformity and stability of the thin film deposition reaction throughout the reaction chamber. Alternatively, the cross-shaped separator 31 can divide the reaction chamber into four relatively independent reaction zones, simultaneously achieving the deposition reaction of two sets of reactive gases, thus improving the efficiency of thin film deposition.

[0094] See Figures 14 to 16 This application provides a semiconductor thin film processing apparatus, which includes a chamber base 1, a cover 2, and the aforementioned gas distribution assembly 3. The chamber base 1 has a top opening 11, and the cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber between the cover 2 and the chamber base 1. The cover 2 is provided with an installation groove 21, and the partition 31 is installed in the installation groove 21.

[0095] In the above embodiments, the chamber base 1 provides a stable support and installation platform for the semiconductor thin film processing equipment. The chamber base 1 has a top opening 11, which cooperates with the cover 2 to form a reaction chamber, providing a spatial environment for the semiconductor thin film processing process. At the same time, the chamber base 1 can withstand the pressure and temperature changes during the process operation inside the reaction chamber, ensuring the long-term stable operation of the semiconductor thin film processing equipment.

[0096] In addition, the top opening 11 allows the cover 2 to be easily opened when maintenance and repair work such as inspection, cleaning, and replacement of parts is required inside the reaction chamber, ensuring the cleanliness and process stability of the reaction chamber.

[0097] See Figure 16 The mounting groove 21 can be a through hole or a countersunk hole on the cover 2. The mounting groove 21 can accurately position the separator 31 on the cover 2, ensure the stability of the separator 31 installation, ensure the separation effect of the separator 31 on the reaction chamber, realize effective isolation and airflow control between different reaction areas, and ensure that the reaction in each reaction area can be carried out according to the predetermined process parameters, thereby improving the quality of the film.

[0098] In some embodiments, see Figure 14 and Figure 15 The semiconductor thin film processing equipment includes a support unit 4, which is rotatably disposed in the reaction chamber and used to support the substrate; The central part 311 has a recessed area 313 on the air outlet side relative to the branch part 312. The supporting part 4 is provided with a boss 41, which is nested with the recessed area 313 and forms a clearance fit.

[0099] In the above embodiment, the support part 4 is rotatably disposed in the reaction chamber, providing stable support for multiple substrates and ensuring that the substrates can maintain a fixed position and rotational posture in the reaction chamber, while ensuring that the film can be uniformly deposited on the substrate surface.

[0100] See Figure 15 The boss 41 and the recessed area 313 are located in the middle area of ​​multiple reaction areas. The nested cooperation between the boss 41 and the recessed area 313 can form a step gap between multiple reaction areas. While ensuring the stability of substrate rotation and the uniformity of film deposition, it avoids gas leakage between multiple reaction areas and prevents gases from different reaction areas from mixing in the middle area, thereby improving the uniformity of film deposition on the substrate.

[0101] Semiconductor thin film processing equipment includes thin film deposition equipment or thin film etching equipment. Thin film deposition equipment can be atomic layer deposition equipment or chemical vapor deposition equipment to ensure the uniformity of the thin film deposited on the substrate surface. Thin film etching equipment selectively removes the thin film in a set area on the substrate surface through physical or chemical methods, and can achieve thin film removal with atomic layer precision.

[0102] This application also provides a semiconductor thin film deposition method, applied to the aforementioned semiconductor thin film processing equipment, the semiconductor thin film deposition method comprising: S101, the first substrate is transmitted to the carrier unit through the transfer port; In the above embodiments, the first substrate is transferred to the carrier through the transfer port, realizing the introduction of the substrate from the outside of the reaction chamber to the internal reaction position, which facilitates the subsequent thin film deposition process operation, and enables the entire thin film deposition process to be carried out in a predetermined order, ensuring the continuity and stability of the process, and helping to improve the efficiency of thin film deposition and the consistency of thin film quality.

[0103] S102, rotate the support part to transfer the first substrate to the second reaction region; The second reaction region can attach metal source material to the substrate. The first substrate can be transferred to the second reaction region by rotating the support part, so that the first substrate can come into contact with the metal source gas. Furthermore, by flexibly adjusting parameters such as the residence time and processing conditions of the first substrate in the second reaction region, it is easy to form a uniform and controllable thin film layer on the surface of the first substrate.

[0104] S103, the second substrate is transferred to the carrier unit through the transfer port, and the second substrate is located in the first reaction area; The second reaction zone avoids the transmission port.

[0105] In semiconductor thin film deposition processes, multiple substrates are often processed simultaneously to improve production efficiency. This application's embodiments enable parallel processing of multiple substrates within the same equipment, thereby improving the efficiency of thin film deposition on substrates. For example, while the first substrate is being processed in the second reaction region, the second substrate is reacting in the first reaction region, achieving process coordination and improving overall process efficiency and substrate processing quality.

[0106] In addition, the second reaction zone avoids the wafer transfer port, which can prevent the metal source, such as liquid or solid source, from depositing at the wafer transfer port, thus preventing the metal source material from contaminating the substrate during the wafer transfer process and ensuring the safety of the wafer transfer process.

[0107] In some embodiments, the reaction chamber further includes a control region for concentrating catalyst gas, and the process of the semiconductor thin film deposition method includes: The support unit is rotated so that the substrate sequentially passes through the second reaction region, the control region, and the first reaction region. The support unit can rotate clockwise or counterclockwise. An intermediate is first formed on the substrate by passing a metal source gas and a catalyst gas. This intermediate then reacts with the reacting gases to obtain a thin film. This avoids problems such as localized excessive thickness or thinness of the film and uneven crystallization, thus improving the uniformity of the film.

[0108] In one specific embodiment, the projection of multiple branches of the gas distribution assembly onto the chamber base divides the reaction chamber into a first reaction region, a second reaction region, and a control region. The first reaction region is used to collect the reaction gas, the second reaction region is used to collect the metal source gas, and the control region is used to collect the catalyst gas. The semiconductor thin film deposition process includes: The carrier is rotated clockwise and metal source gas and catalyst gas are continuously introduced to form an intermediate on the substrate through the reaction of metal source gas and catalyst gas. The carrier is rotated clockwise and a reaction gas is continuously introduced to form a thin film on the substrate by reacting the intermediate with the reaction gas.

[0109] In the above embodiments, the metal source gas, reactant gas, and catalyst are continuously introduced into the reaction chamber. Three spatial regions are separated within the reaction chamber by a separator, allowing the three different types of gases to be continuously introduced into these three regions, achieving physical separation between them. The support unit within the reaction chamber rotates clockwise, and the substrate placed on the support unit rotates synchronously, exposing the substrate to different types of gases sequentially, thus achieving thin film growth on the substrate. When the controlled gas is the catalyst gas, the specific process of the thin film deposition is as follows: Metal source gas + catalyst gas = intermediate. Intermediate + Reactive Gas = Thin Film

[0110] The above-described thin film deposition process accelerates the reaction rate of thin film deposition, ensures uniform growth of the thin film on the substrate surface, avoids problems such as local excessive thickness or thinness of the thin film and uneven crystallization, and improves the uniformity of the thin film.

[0111] In some embodiments, the reaction chamber further includes a control region for concentrating inhibitor gas, and the process of the semiconductor thin film deposition method includes: The carrier is rotated so that the substrate sequentially passes through the control region, the second reaction region, and the first reaction region. The carrier can rotate clockwise or counterclockwise. An inhibitor is first deposited on the substrate; the inhibitor gas effectively suppresses deposition at the front end of the deep well openings on the substrate, achieving uniform deposition in the deep wells.

[0112] In one specific embodiment, the projection of multiple branches of the gas distribution assembly onto the chamber base divides the reaction chamber into a first reaction region, a second reaction region, and a control region. The first reaction region is used to collect the reactant gas, the second reaction region is used to collect the metal source gas, and the control region is used to collect the inhibitor gas. The semiconductor thin film deposition process includes: Rotate the support part counterclockwise so that the substrate passes through the control region, the second reaction region and the first reaction region in sequence.

[0113] In one embodiment, the reactant gas is O3, and the metal source gas is a volatile gas of CpZr ((cyclopentadienyl)tris(dimethylamide)zirconium). When ZrO is deposited using the above semiconductor thin film deposition method, tetrahydrofuran is used as the inhibitor, which can effectively suppress ZrO deposition at the front end of the deep hole on the substrate. In another embodiment, the reactant gas is O3, and the metal source gas is CpHf (tris(dimethylamino)cyclopentadienylhafnium). When HfO is deposited using the above semiconductor thin film deposition method, tetrahydrofuran is used as the inhibitor, which can effectively suppress HfO deposition at the front end of the deep hole on the substrate, achieving a uniform deposition process with a high aspect ratio.

[0114] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A semiconductor thin film processing apparatus, characterized in that, include: A chamber base (1) having a top opening (11) and a transfer port (12). Cover (2), the cover (2) is detachably disposed at the top opening (11) and forms a reaction chamber with the chamber base (1), and the cover (2) is provided with an installation groove (21). Gas distribution assembly (3) is installed in the mounting groove (21). Gas distribution assembly (3) includes a separator (31). The separator (31) includes a central part (311) and a plurality of branches (312) spaced apart from the central part (311). The projection of the plurality of branches (312) on the chamber base (1) divides the reaction chamber into at least a first reaction area (101) and a second reaction area (102). The first reaction area (101) is used to collect the reaction gas, and the second reaction area (102) is used to collect the metal source gas and avoid the transfer port (12).

2. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The gas distribution assembly (3) has an inlet end and an outlet end, and the inlet end is located outside the reaction chamber, while the outlet end is connected to the reaction chamber. The air inlet of the air distribution assembly (3) includes a central air inlet located on the central portion (311) and a branch air inlet located on the branch portion (312). The air outlet of the air distribution assembly (3) includes a central air outlet located on the central portion (311) and a branch air outlet located on the branch portion (312). The central air outlet is connected to the central air inlet, and the branch air outlet is connected to the branch air inlet. The central air intake and the branch air intakes are independent.

3. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The plurality of branches (312) include a first branch (3121) and a second branch (3122), the first branch (3121) and the second branch (3122) being connected to the central portion (311) at intervals, and the included angle between the first branch (3121) and the second branch (3122) being 45°-180°.

4. The semiconductor thin film processing apparatus according to claim 3, characterized in that, The central angle corresponding to the first reaction region is greater than the central angle corresponding to the second reaction region.

5. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The plurality of branches (312) include a first branch (3121), a second branch (3122) and a third branch (3123), the first branch (3121), the second branch (3122) and the third branch (3123) being connected to the central part (311) at intervals, and the projection portion of the plurality of branches (312) on the chamber base (1) divides the reaction chamber into a first reaction region (101), a second reaction region (102) and a control region (104), the control region (104) being used to collect control gas.

6. The semiconductor thin film processing apparatus according to claim 5, characterized in that, The central angle corresponding to the first reaction region is greater than the central angle corresponding to the control region, and the central angle corresponding to the second reaction region is greater than the central angle corresponding to the control region.

7. The semiconductor thin film processing apparatus according to claim 5, characterized in that, The central angle corresponding to the first reaction region is 60°-165°, and the central angle corresponding to the second reaction region is 60°-165°.

8. The semiconductor thin film processing apparatus according to claim 5, characterized in that, The gas distribution assembly (3) includes a first gas distribution component (32), a second gas distribution component (33), and a regulating gas distribution component (34). The first gas distribution component (32) is disposed in a portion of the mounting groove (21) and is opposite to the first reaction area. The second gas distribution component (33) is disposed in a portion of the mounting groove (21) and is opposite to the second reaction area. The regulating gas distribution component (34) is disposed in a portion of the mounting groove (21) and is opposite to the regulating area.

9. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The transfer port (12) is opposite to the first reaction region.

10. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The branch section (312) has a branch air passage, which includes at least one branch air inlet (31201) located on the air inlet side of the branch section (312) and a plurality of branch air outlets (31202) located on the air outlet side of the branch section (312). The branch (312) air outlet side includes a plurality of strip-shaped protrusions (31203), the plurality of strip-shaped protrusions (31203) are arranged at intervals in the circumferential direction of the separator (31), and the plurality of branch air outlets (31202) are disposed on the plurality of strip-shaped protrusions (31203).

11. The semiconductor thin film processing apparatus according to claim 10, characterized in that, The branch air inlet (31201) is located on the air intake side of the branch (312) near the center (311).

12. The semiconductor thin film processing apparatus according to claim 10, characterized in that, The branch gas path includes a partition gas buffer chamber (3124) disposed in the branch section (312), and the branch air inlet (31201) is connected to the plurality of branch air outlets (31202) through the partition gas buffer chamber (3124).

13. The semiconductor thin film processing apparatus according to claim 10, characterized in that, The central part (311) has a central air passage, which includes at least one central air inlet (3111) located on the air inlet side of the central part (311) and a plurality of central air outlets (3112) located on the air outlet side of the central part (311). The multiple central air outlets (3112) are arranged in multiple rows and are correspondingly set with the multiple branch air outlets (31202).

14. The semiconductor thin film processing apparatus according to claim 1, characterized in that, The semiconductor thin film processing equipment is a thin film deposition equipment or a thin film etching equipment.

15. A semiconductor thin film deposition method, applied to the semiconductor thin film processing apparatus according to any one of claims 1-14, characterized in that, include: The first substrate is transmitted to the carrier unit through the transfer port; Rotate the support portion to transfer the first substrate to the second reaction region; The second substrate is transferred to the carrier through the transfer port, and the second substrate is located in the first reaction region; The second reaction area avoids the transfer port.

16. The semiconductor thin film deposition method according to claim 15, characterized in that, The reaction chamber further includes a control region for concentrating catalyst gas. The process of the semiconductor thin film deposition method includes: The carrier is rotated so that the substrate passes sequentially through the second reaction region, the control region, and the first reaction region.

17. The semiconductor thin film deposition method according to claim 15, characterized in that, The reaction chamber further includes a control region for concentrating inhibitor gas. The process of the semiconductor thin film deposition method includes: Rotate the carrier portion so that the substrate passes sequentially through the control region, the second reaction region, and the first reaction region.

Images