Integrated multiplex measurement system

Abstract

An integrated multiplex measurement system for measuring semiconductor objects includes a main body, a fringe interferometer, a white light interferometer probe, and a color conjugate focal measurement probe. The fringe interferometer, white light interferometer probe, and color conjugate focal measurement probe are housed within the main body. The fringe interferometer can be used to measure the warp, unevenness, color, brightness distribution, shape, and high-nitrogen region distribution of the semiconductor object. The white light interferometer probe and color conjugate focal measurement probe are located at one point. The white light interferometer probe can measure the surface roughness and surface depth of the semiconductor object, while the color conjugate focal measurement probe can measure the surface roughness and thickness of the semiconductor object. It can accurately measure the surface roughness of the semiconductor object using confocal imaging dispersion analysis technology, and can also perform surface profile measurements, including fine curvature and structural features. This invention integrates multiple measuring devices into one machine, which can be used separately or together, thus facilitating the measurement of semiconductor objects.

Description

Technical Field

[0001] This invention relates to an integrated multiplexing measurement system, and more particularly to a semiconductor measurement system that integrates multiple measuring devices for measuring semiconductor objects. Background Technology

[0002] In recent years, third-generation semiconductors SiC and GaN have attracted much attention from the industry and the media. Their biggest application is in power semiconductor devices. In recent years, due to the requirements of energy conservation and carbon reduction, various emerging energy-saving industries such as electric vehicles, solar power generation, DC power grids and charging piles all require power semiconductors with high conversion efficiency.

[0003] Semiconductor manufacturing processes are mainly divided into front-end and back-end processes. Front-end processes involve wafer fabrication, including crystal growth, slicing, grinding, polishing, cleaning, lithography, etching, thin film deposition, and ion implantation. Back-end processes include packaging, testing, and assembly. Measurement is a crucial step in semiconductor manufacturing. Semiconductor measurement equipment is used to measure and inspect various parameters and characteristics during the manufacturing process. Typically, multiple measurement units are required, and each unit must be used sequentially, which is labor-intensive, time-consuming, and lacks automation efficiency. Furthermore, it is impossible to compare and analyze multiple measurement results before and after the manufacturing process, hindering improvements in manufacturing yield and production efficiency. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an integrated multitasking measurement system to address the shortcomings of the prior art. It is mainly used to improve the problems of poor object transport flow and difficulty in improving production efficiency in semiconductor measurement manufacturing process. By integrating multiple measuring devices into one machine, it can facilitate the measurement operation of semiconductor objects and facilitate automated production, thereby improving production efficiency.

[0005] To address the aforementioned technical problems, the present invention provides an integrated multiplexer measurement system for measuring semiconductor objects. The integrated multiplexer measurement system includes: a housing; a fringe interferometer disposed within the housing for measuring the semiconductor object; a white light interferometer probe disposed within the housing for measuring the semiconductor object; and a color conjugate focal length measurement probe disposed within the housing for measuring the semiconductor object. The white light interferometer probe and the color conjugate focal length measurement probe are arranged adjacent to each other.

[0006] Preferably, the fringe interference device is located inside the machine body near one side, and the white light interference probe and the color conjugate focal measurement probe are located inside the machine body near the other side.

[0007] Preferably, the body is a cuboid, with a first side and a second side on opposite sides of the body, the fringe interference device being close to the first side of the body, the white light interference probe and the color conjugate focal measurement probe being close to the second side of the body, and the other opposite sides of the body being a third side and a fourth side, with the third side or the fourth side being open.

[0008] Preferably, the white light interferometer probe and the color conjugate focus measurement probe are arranged at intervals with the fringe interferometer, and the fringe interferometer is located in the body of the machine at a position away from the white light interferometer probe and the color conjugate focus measurement probe.

[0009] Preferably, a first worktable is provided below the fringe interference device, the first worktable being used to place the semiconductor object, and a second worktable is provided below the white light interference probe and the color conjugate focal measurement probe, the second worktable being used to place the semiconductor object.

[0010] Preferably, the fringe interference device can be used to measure at least one of the following: warpage, unevenness, color, brightness distribution, shape, and high-nitrogen region distribution of the semiconductor object.

[0011] Preferably, the white light interferometer probe can be used to measure at least one of the surface roughness and surface depth and minute changes of the semiconductor object.

[0012] Preferably, the color conjugate focal measurement probe is used to measure at least one of the surface roughness, thickness variation, and surface profile of the semiconductor object.

[0013] Preferably, the integrated multiplexing measurement system is used in the front-end manufacturing process of compound semiconductors.

[0014] The integrated multiplexing measurement system provided by the present invention includes a body, a fringe interferometer, a white light interferometer probe, and a color conjugate focal measurement probe. The fringe interferometer, the white light interferometer probe, and the color conjugate focal measurement probe are disposed in the body, and the white light interferometer probe and the color conjugate focal measurement probe are arranged adjacent to each other. The fringe interferometer, the white light interferometer probe, and the color conjugate focal measurement probe can be used to measure semiconductor objects respectively.

[0015] This invention integrates multiple measuring devices into one machine, which facilitates the measurement of semiconductor objects, simplifies the transport process of semiconductor objects, and enables semiconductor objects to quickly complete multiple measurement tasks. Measurements can be performed on the production line, which is conducive to automated production. Measurements can be performed on semiconductor objects after different manufacturing processes to achieve complete measurement results, thereby improving production efficiency, manufacturing process analysis, and yield. It can effectively solve the problems of poor object transport flow, insufficient object measurement data, and difficulty in improving production efficiency and manufacturing process yield in conventional measurement manufacturing processes.

[0016] To further understand the features and technical content of the present invention, please refer to the following detailed description and accompanying drawings. However, the drawings are provided for reference and illustration only and are not intended to limit the present invention. Attached Figure Description

[0017] Figure 1 This is a three-dimensional schematic diagram of an integrated multiplex measurement system according to an embodiment of the present invention.

[0018] Figure 2 This is a front view schematic diagram of the integrated multiplexing measurement system according to an embodiment of the present invention.

[0019] Figure 3 This is a top view schematic diagram of the integrated multiplex measurement system according to an embodiment of the present invention.

[0020] Figure 4 This is a side view schematic diagram of an integrated multiplex measurement system according to an embodiment of the present invention. Detailed Implementation

[0021] [Example]

[0022] Please see Figures 1 to 4 This invention provides an integrated multiplexing measurement system for measuring semiconductor objects (compound semiconductors). The semiconductor object can be a compound semiconductor, such as a third-generation semiconductor. The integrated multiplexing measurement system is preferably applied in the front-end manufacturing process of compound semiconductors, but this is not a limitation. The integrated multiplexing measurement system includes a body 1, a fringe interferometer 2, a white light interferometer probe 3, and a color conjugate focal length measurement probe 4. The fringe interferometer 2, the white light interferometer probe 3, and the color conjugate focal length measurement probe 4 are disposed within the body 1.

[0023] The fringe interference device 2 is disposed inside the body 1. In this embodiment, the fringe interference device 2 is disposed inside the body 1 near one side (e.g., the left side). A first worktable 5 can be disposed below the fringe interference device 2. The first worktable 5 can be used to place the semiconductor object to be measured (e.g., a wafer or ingot). The fringe interference device 2 can quickly obtain information such as the shape of the overall surface of the object by designing the fringe image and analyzing the changes in the interference fringes. It can be used to measure the warp, unevenness, color, brightness distribution, shape, and distribution of high-nitrogen regions of the semiconductor object.

[0024] The white light interference probe 3 and the color conjugate focus measurement probe 4 are disposed inside the body 1, and are located at one place. The white light interference probe 3 and the color conjugate focus measurement probe 4 are arranged adjacent to each other. The white light interference probe 3 and the color conjugate focus measurement probe 4 are arranged at intervals with the fringe interference device 2, that is, the fringe interference device 2 is disposed inside the body 1 at a position away from the white light interference probe 3 and the color conjugate focus measurement probe 4.

[0025] In this embodiment, the white light interference probe 3 and the color conjugate focal measurement probe 4 are located inside the body 1 near the other side (such as the right side). A second worktable 6 can be provided below the white light interference probe 3 and the color conjugate focal measurement probe 4. The second worktable 6 can be used to place the semiconductor object to be measured (such as a wafer or ingot).

[0026] In this embodiment, the body 1 is rectangular, with a first side 11 and a second side 12 on opposite sides. The fringe interferometer 2 is located near the first side 11 of the body 1, and the white light interferometer probe 3 and the color conjugate focus measurement probe 4 are located near the second side 12 of the body 1, so that the fringe interferometer 2, the white light interferometer probe 3, and the color conjugate focus measurement probe 4 can form an optimal configuration. The other opposite sides of the body 1 are a third side 13 and a fourth side 14, and the third side 13 or the fourth side 14 can be open to facilitate the input and output of semiconductor devices.

[0027] The white light interference probe 3 adopts the principle of interferometry. By irradiating the surface of a semiconductor object with a white light source, an interference fringe image is formed. By analyzing the spacing and shape of the interference fringes, the height difference and morphological characteristics of the surface can be accurately measured. The white light interference probe 3 can measure the nanoscale roughness, surface depth and minute changes of the semiconductor object.

[0028] The color conjugate focal measurement probe 4 is a dispersive probe. It can also be used to measure the surface roughness at the micrometer level and the variation in overall average thickness of semiconductor objects. Utilizing the multi-wavelength characteristics of a colored light source, the color conjugate focal measurement probe 4 performs depth measurement through light reflection and scattering. It accurately measures the surface roughness of semiconductor objects using confocal imaging dispersion analysis technology and can also perform surface profile measurement, including minute curvature and structural features. This invention integrates multiple measuring devices, such as the fringe interferometer 2, the white light interferometer 3, and the color conjugate focal measurement probe 4, into a single instrument. These devices can be used separately or together, facilitating precise and rapid measurement of semiconductor objects at various manufacturing processes. The fringe interferometer 2 and the white light interferometer 3 can be used for nanometer-level measurements, particularly suitable for measuring sliced ​​and ground wafers, while the color conjugate focal measurement probe 4 can be used for micrometer-level measurements.

[0029] [Beneficial Effects of the Examples]

[0030] The beneficial effects of the present invention are that the integrated multiplexing measurement system provided by the present invention includes a body, a fringe interferometer, a white light interferometer probe and a color conjugate focal measurement probe. The fringe interferometer, the white light interferometer probe and the color conjugate focal measurement probe are disposed in the body, and the white light interferometer probe and the color conjugate focal measurement probe are arranged adjacent to each other. The fringe interferometer, the white light interferometer probe and the color conjugate focal measurement probe can be used to measure semiconductor objects respectively.

[0031] This invention integrates multiple measuring devices into one machine, which facilitates the measurement of semiconductor objects, simplifies the transport process of semiconductor objects, enables semiconductor objects to quickly complete multiple measurement tasks, allows measurement to be performed on the production line, facilitates automated production, meets the measurement needs of various manufacturing processes, achieves complete measurement results, improves manufacturing process result analysis and production efficiency, and can effectively solve the problems of poor object transport flow, insufficient object measurement data, and difficulty in improving production efficiency and yield in known measurement manufacturing processes.

[0032] Furthermore, the fringe interferometer of this invention is positioned near one side of the machine body, while the white light interferometer probe and the color conjugate focus measurement probe are positioned near the other side of the machine body. The machine body is rectangular, with a first side and a second side on opposite sides. The fringe interferometer is positioned near the first side of the machine body, and the white light interferometer probe and the color conjugate focus measurement probe are positioned near the second side of the machine body. The other opposite sides of the machine body are a third side and a fourth side, with the third or fourth side being open. The white light interferometer probe and the color conjugate focus measurement probe are arranged at intervals from the fringe interferometer, with the fringe interferometer positioned within the machine body away from the white light interferometer probe and the color conjugate focus measurement probe. This arrangement allows the fringe interferometer, the white light interferometer probe, and the color conjugate focus measurement probe to form an optimal configuration, facilitating the transport and placement of semiconductor objects, simplifying the semiconductor object transport process, and enabling the semiconductor objects to quickly complete various measurement operations.

[0033] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of patent protection of the present invention. All equivalent changes made based on the description and drawings of the present invention are included within the scope of protection of the present invention.

Claims

1. An integrated multiplex measurement system for measuring semiconductor objects, characterized in that, The integrated multiplexing measurement system includes: One organism; A fringe interferometer, wherein the fringe interferometer is disposed within the machine body, for measuring the semiconductor object; A white light interferometer probe, wherein the white light interferometer probe is disposed within the machine body, for measuring the semiconductor object; and A color conjugate focal length measurement probe is disposed in the body of the machine and is used to measure the semiconductor object. The white light interferometer probe and the color conjugate focal length measurement probe are disposed adjacent to each other.

2. The integrated multiplexing measurement system according to claim 1, characterized in that, The fringe interference device is located inside the machine body near one side, and the white light interference probe and the color conjugate focal measurement probe are located inside the machine body near the other side.

3. The integrated multiplexing measurement system according to claim 1, characterized in that, The body is rectangular, with a first side and a second side on opposite sides. The fringe interference device is located near the first side of the body, and the white light interference probe and the color conjugate focal measurement probe are located near the second side of the body. The other opposite sides of the body are a third side and a fourth side, and the third side or the fourth side is open.

4. The integrated multiplexing measurement system according to claim 1, characterized in that, The white light interferometer probe and the color conjugate focal measurement probe are arranged at intervals with the fringe interferometer device, which is located inside the machine body at a position away from the white light interferometer probe and the color conjugate focal measurement probe.

5. The integrated multiplexing measurement system according to claim 1, characterized in that, A first worktable is provided below the fringe interference device, which can be used to place the semiconductor object. A second worktable is provided below the white light interference probe and the color conjugate focal measurement probe, which can be used to place the semiconductor object.

6. The integrated multiplexing measurement system according to claim 1, characterized in that, The fringe interferometer can be used to measure at least one of the following of the semiconductor object: warp, unevenness, color, brightness distribution, shape, and high-nitrogen region distribution.

7. The integrated multiplexing measurement system according to claim 1, characterized in that, The white light interferometer probe can be used to measure at least one of the surface roughness and surface depth of the semiconductor object, as well as minute variations.

8. The integrated multiplexing measurement system according to claim 1, characterized in that, The color conjugate focal measurement probe is used to measure at least one of the surface roughness, thickness variation, and surface profile of the semiconductor object.

9. The integrated multiplexing measurement system according to claim 1, characterized in that, The integrated multiplexing measurement system is used in the front-end manufacturing process of compound semiconductors.

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