Oxide film removing apparatus

By using a rectifier plate structure in the oxide film removal device to homogenize the etching gas flow rate, the problem of uneven oxide film removal is solved, achieving circumferential uniform removal of the oxide film and reducing the consumption of etching gas.

CN122121583APending Publication Date: 2026-05-29SUMCO CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUMCO CORP
Filing Date
2025-08-01
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In existing oxide film removal devices, the flow rate of etching gas is uneven in the circumferential direction, resulting in uneven removal of oxide film and a large consumption of etching gas.

Method used

The rectifier plate structure includes a rectifier plate, a second rectifier plate, and a third rectifier plate. By setting multiple groups of openings in the etching chamber in a two-dimensional periodic arrangement, the etching gas flow rate is homogenized, and the gas flow is blocked in the peripheral area, ensuring that the amount of oxide film removed is uniform in the circumferential direction, while reducing the consumption of etching gas.

Benefits of technology

This method achieves circumferential uniform removal of the wafer oxide film and effectively reduces the consumption of etching gas.

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    Figure CN122121583A_ABST
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Abstract

Provided is an oxide film removal device capable of uniformizing the removal amount of an oxide film of a wafer in the circumferential direction and capable of suppressing the consumption amount of etching gas. An oxide film removal device has: an etching chamber; a stage on which a wafer having a lower surface with an oxide film is placed; a gas supply portion that supplies etching gas toward a ceiling of the etching chamber; and a gas discharge portion; the etching gas is brought into contact with the oxide film to remove the same; a rectifying plate that divides a space between the ceiling and the stage in the vertical direction; the rectifying plate has a group of openings through which the etching gas passes; the group of openings is composed of a plurality of opening portions arranged in a two-dimensional periodic arrangement pattern so as to overlap the wafer; the rectifying plate has a group-of-openings formation region in which the group of openings is formed, and a peripheral region that is provided outside the group-of-openings formation region all around and that blocks the flow of the etching gas toward the lower side.
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