Active display control device based on gallium arsenide optoelectronic devices

Abstract

This application discloses an active display control device based on gallium arsenide (GaAs) optoelectronic devices. In this device, the GaAs heterojunction field-effect transistor used in the array driving unit, leveraging the material's high electron mobility and the two-dimensional electron gas structure formed by the heterojunction, can instantaneously control the luminous state of the display pixels. Furthermore, it is electrically connected to each display pixel in a one-to-one correspondence, eliminating signal lag caused by multiplexing. Additionally, the GaAs CMOS logic unit, utilizing the properties of GaAs material, can significantly reduce the signal transmission delay of logic gate circuits. Combined with the high-frequency modulation characteristics of pulse width modulation signals, it effectively improves the smoothness of dynamic image transitions. Regarding high-frequency power consumption control, the GaAs heterojunction field-effect transistor can significantly reduce Joule heat loss and static power consumption during high-frequency switching. The cascaded structure of the array driving unit and the GaAs CMOS logic unit can reduce signal attenuation and distortion at high frequencies, reducing the power consumption of the auxiliary amplifier circuit.

Description

Technical Field

[0001] This application relates to the field of display device technology, specifically to an active display control device based on gallium arsenide optoelectronic devices. Background Technology

[0002] Display technology is rapidly evolving towards higher resolution, higher refresh rates, lower power consumption, and wider temperature range adaptability, placing increasingly higher demands on the performance of active display controllers. In terms of high resolution, 4K and 8K displays have gradually become mainstream, and the demand for even higher resolution displays is constantly emerging. This requires controllers to be able to process massive amounts of image data and achieve precise and rapid control of each pixel. High refresh rates make dynamic images smoother and reduce ghosting. Currently, refresh rates of 120Hz and above have become standard in high-end display devices, requiring controllers to have extremely fast signal response and processing capabilities. Meanwhile, low power consumption is a crucial indicator for all types of display devices, especially portable and wearable devices, as the power consumption of the control unit directly affects the device's battery life. In some special application scenarios, such as automotive displays, industrial control screens, and aerospace displays, the wide temperature range adaptability of the display control unit is extremely important, requiring it to operate stably even in extreme high and low temperature environments. However, traditional optoelectronic devices are gradually proving inadequate in meeting these demands. Silicon-based materials have relatively low electron mobility, limiting signal processing speed; organic materials, on the other hand, have shortcomings in stability, operating temperature range, and lifespan. These limitations make it difficult for existing active display control devices to meet the stringent requirements of high-end display scenarios in terms of response speed, efficiency, and environmental adaptability.

[0003] Therefore, how to improve the response speed of display devices while reducing high-frequency power consumption and promoting the further development of display technology is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0004] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide an active display control device based on gallium arsenide optoelectronic devices, which can improve the response speed of display devices and reduce high-frequency power consumption.

[0005] This application provides an active display control device based on gallium arsenide optoelectronic devices, including: a gallium arsenide-based driving circuit module; The gallium arsenide-based driving circuit module includes cascaded array driving units and gallium arsenide CMOS logic units. The array driving unit is composed of gallium arsenide heterojunction field-effect transistors, and the array driving unit is electrically connected to each display pixel in a one-to-one correspondence. The gallium arsenide CMOS logic unit is used to receive external image signals and output pulse width modulation drive signals to the array drive unit.

[0006] In one embodiment, the gallium arsenide heterojunction field-effect transistor employs an AlGaAs / GaAs heterojunction structure. The Al composition content of the AlGaAs barrier layer in the AlGaAs / GaAs heterojunction structure is 0.25-0.35, and the thickness of the GaAs channel layer is 10-20 nm.

[0007] In one embodiment, the array driving unit comprises at least two layers of staggered gallium arsenide thin-film transistors; The gate of each gallium arsenide thin-film transistor is connected to the gallium arsenide CMOS logic cell through an independent gallium arsenide interconnect. The source and drain of adjacent gallium arsenide thin-film transistors are interconnected through vertical gallium arsenide vias. The channel length of a single gallium arsenide thin-film transistor is 0.5-2 μm.

[0008] In one embodiment, the gate insulating layer of the gallium arsenide thin film transistor is a hafnium oxide-aluminum oxide composite layer; The total thickness of the hafnium oxide-aluminum oxide composite layer is 20 to 50 nm, the dielectric constant is not less than 15, and the leakage current density does not exceed 10. -8 A / cm².

[0009] In one embodiment, the active display control device based on gallium arsenide optoelectronic devices further includes: a gallium arsenide light emission control module; The gallium arsenide light emission control module includes: a gallium arsenide quantum well light emission diode and a gallium arsenide driver transistor; The base of the gallium arsenide driving transistor is connected to the output terminal of the gallium arsenide-based driving circuit module, the collector of the gallium arsenide driving transistor is connected to the anode of the gallium arsenide quantum well light-emitting diode, the emitter of the gallium arsenide driving transistor is grounded, and the cathode of the gallium arsenide quantum well light-emitting diode is connected to the positive terminal of the power supply.

[0010] In one embodiment, the gallium arsenide quantum well light-emitting diode includes 3 to 5 alternately grown GaAs / AlGaAs quantum wells; The thickness of each quantum well is 5 to 10 nm, the thickness of the barrier layer is 15 to 25 nm, and the temperature coefficient of the emission wavelength does not exceed 0.3 nm / ℃.

[0011] In one embodiment, the gallium arsenide quantum well light-emitting diode is packaged using a ceramic substrate flip-chip structure.

[0012] In one embodiment, the active display control device based on gallium arsenide optoelectronic devices further includes: a gallium arsenide photodetector module; The gallium arsenide photodetector module includes: a gallium arsenide PIN photodiode and a gallium arsenide preamplifier circuit; The output terminal of the gallium arsenide PIN photodiode is connected to the input terminal of the gallium arsenide preamplifier circuit, and the output terminal of the gallium arsenide preamplifier circuit is connected to the feedback input terminal of the gallium arsenide-based driving circuit module.

[0013] In one embodiment, the substrate of the gallium arsenide-based driving circuit module is made of semi-insulating gallium arsenide material.

[0014] In one embodiment, the substrate surface is provided with a gallium arsenide buffer layer with a thickness of 50-100 nm, and an n-type gallium arsenide channel layer and a p-type aluminum gallium arsenide capping layer are sequentially grown on the surface of the buffer layer.

[0015] The active display control device based on gallium arsenide optoelectronic devices provided in this application achieves nanosecond-level switching speeds in the array driving unit by utilizing gallium arsenide heterojunction field-effect transistors. This is achieved by leveraging the high electron mobility of the material and the two-dimensional electron gas structure formed by the heterojunction. This allows for instantaneous control of the luminous state of display pixels, and the transistors are electrically connected one-to-one with each display pixel, avoiding the row and column gating delays of traditional scanning drives and eliminating signal lag caused by multiplexing. Furthermore, the gallium arsenide CMOS logic unit, thanks to the characteristics of gallium arsenide material, can significantly reduce the signal transmission delay of logic gate circuits, enabling rapid signal parsing and pulse width modulation. This shortens the overall link time from signal input to pixel driving, and, combined with the high-frequency adjustment characteristics of pulse width modulation signals, effectively improves the smoothness of dynamic image transitions. In terms of high-frequency power consumption control, gallium arsenide heterojunction field-effect transistors have low on-resistance and stable threshold voltage, which significantly reduces Joule heat loss and static power consumption during high-frequency switching. The cascaded structure of the array driving unit and gallium arsenide CMOS logic unit ensures a short signal transmission path and excellent impedance matching, reducing signal attenuation and distortion at high frequencies and reducing the power consumption of auxiliary amplifier circuits.

[0016] In summary, this device achieves an optimal balance between high-speed response and low-frequency energy consumption through the synergistic effect of material properties and structural design.

[0017] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0018] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1A schematic diagram of the active display control device based on gallium arsenide optoelectronic devices provided in an embodiment of this application is shown. Detailed Implementation

[0019] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0020] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present application will now be described in detail with reference to the accompanying drawings and embodiments. Although the embodiments of this application provide method operation instruction steps as shown in the following embodiments or drawings, more or fewer operation instruction steps may be included in the method based on conventional or non-inventive effort. In steps where there is no logically necessary causal relationship, the execution order of these steps is not limited to the execution order provided in the embodiments of this application. In actual processing or when the device executes, the method may be executed sequentially or in parallel according to the method shown in the embodiments or drawings.

[0021] Example 1: This embodiment proposes an active display control device based on gallium arsenide optoelectronic devices. Please refer to [link / reference]. Figure 1 , Figure 1 A schematic diagram of the active display control device based on gallium arsenide optoelectronic devices provided in this embodiment is shown. Figure 1 As shown, the device mainly includes a gallium arsenide-based driving circuit module.

[0022] In this embodiment, the gallium arsenide-based driving circuit module refers to a driving circuit functional module built with gallium arsenide material as its core foundation. It is the core component for realizing active display control. Its key feature is that the key components of the circuit are all made of gallium arsenide material, rather than traditional silicon-based or other materials. These gallium arsenide devices are integrated through a specific circuit topology to form an overall circuit module with functions such as signal processing and driving signal output, used to receive external signals and output control signals to the display pixels.

[0023] Specifically, the gallium arsenide-based driving circuit module includes cascaded array driving units and gallium arsenide CMOS logic units; An array driving unit is a functional unit composed of multiple gallium arsenide heterojunction field-effect transistors arranged in a specific manner (such as forming a matrix array) and connected by circuits. These transistors act as switches or driving elements, receiving driving signals from gallium arsenide CMOS logic units to independently control the working state of the corresponding display pixels, such as turning on, turning off, or adjusting the light intensity. They are the core device foundation for realizing array-based precise driving.

[0024] Gallium arsenide heterojunction field-effect transistors (GaAs) form a two-dimensional electron gas through a heterojunction (such as AlGaAs / GaAs), exhibiting significantly higher carrier mobility than silicon-based devices. This enables nanosecond-level switching speeds, ensuring rapid response to drive signals for each pixel in the array and meeting the demands of instantaneous signal changes in high refresh rate displays. Furthermore, these transistors have low on-resistance, drastically reducing energy loss due to resistance during high-frequency switching. This helps reduce the overall power consumption of the array drive unit, with particularly significant energy-saving effects under high-frequency driving conditions.

[0025] The core functional structure of the transistor consists of a heterojunction formed by an aluminum gallium arsenide (AlGaAs) layer and a gallium arsenide (GaAs) layer. The AlGaAs layer acts as a barrier layer, while the GaAs layer serves as a channel layer for carrier transport. The difference in band structure between the two materials creates a quantum confinement effect. In one embodiment, the Al content of the AlGaAs barrier layer in the AlGaAs / GaAs heterojunction structure can be specifically 0.25-0.35%, and the thickness of the GaAs channel layer can be specifically 10-20 nm. Controlling the Al content within the range of 0.25-0.35% allows for precise control of the band offset between the AlGaAs barrier layer and the GaAs channel layer. This ensures effective confinement of carrier movement within the GaAs channel layer to improve mobility, while avoiding difficulties in carrier injection due to an excessively high barrier, thus ensuring good transistor conduction characteristics. The GaAs channel layer thickness is limited to 10-20 nm, which can further optimize the concentration and mobility of the two-dimensional electron gas through quantum size effects. This avoids enhanced carrier scattering due to excessive channel thickness or quantum tunneling caused by excessive thinness, ensuring the stability and consistency of the transistor's output characteristics. Of course, other parameters can also be used to construct the AlGaAs / GaAs heterojunction structure, and all can be described in this embodiment, which will not be repeated here.

[0026] Each driving element (composed of gallium arsenide heterojunction field-effect transistors) in the array driving unit forms an independent and unique electrical connection with each display pixel (such as a light-emitting diode, organic light-emitting unit, etc.) in the display panel. Specifically, if the display panel contains N display pixels (e.g., pixel 1, pixel 2... pixel N), then the array driving unit also contains N driving elements (e.g., driving element 1, driving element 2... driving element N), where driving element 1 is electrically connected only to pixel 1, driving element 2 is electrically connected only to pixel 2, and so on. Each driving element is solely responsible for signal transmission and state control (such as adjusting brightness, on / off state, etc.) of its corresponding unique pixel. There is no situation where one driving element controls multiple pixels simultaneously or multiple driving elements jointly control one pixel.

[0027] The core of this connection method is to achieve one-to-one independent driving, which is different from the traditional row and column scanning driving method (that is, indirectly controlling a large number of pixels by using a few driving elements to select rows and columns). This method can directly and accurately control each pixel individually, which is an important support for improving display response speed and control precision.

[0028] Another important component of the gallium arsenide-based driver circuit module is the gallium arsenide CMOS logic unit, which refers to the complementary metal-oxide-semiconductor (CMOS) logic circuit unit built on gallium arsenide material. It is composed of gallium arsenide P-type field-effect transistors (PMOS) and gallium arsenide N-type field-effect transistors (NMOS) according to a specific logic topology. As the core module of signal processing, this unit relies on the high electron mobility of gallium arsenide material and undertakes two key functions: first, to receive externally input image data signals (such as pixel brightness, color, and other information from image sources and processors); second, to analyze and process these signals, generate pulse width modulation (PWM) format drive signals, and transmit them to the array drive unit, which ultimately controls the light emission state of the display pixels (such as brightness, on / off state, etc.).

[0029] The technological advantages of gallium arsenide (GaAs) CMOS logic cells are as follows: Firstly, GaAs material has high electron mobility, and the signal transmission delay of CMOS logic cells built based on it is much lower than that of traditional silicon-based logic cells. It can efficiently process high-resolution, high-refresh-rate image signals and has a high degree of electrical characteristic matching with array drive units based on GaAs material, which can reduce signal transmission loss and distortion and improve overall response speed. Secondly, its output PWM drive signal can achieve precise control of pixel luminous intensity by adjusting the pulse duty cycle. Combined with the low power consumption characteristics of GaAs material, it has low energy loss when operating at high frequency. At the same time, combined with the one-to-one drive method of array drive units, it can avoid unnecessary power consumption and balance control accuracy and energy efficiency.

[0030] The active display control device based on gallium arsenide optoelectronic devices provided in this embodiment, in terms of response speed, utilizes gallium arsenide heterojunction field-effect transistors in the array driving unit. Leveraging the high electron mobility of the material and the two-dimensional electron gas structure formed by the heterojunction, nanosecond-level switching speeds are achieved. This allows for instantaneous control of the luminous state of display pixels, and the transistors are electrically connected one-to-one with the display pixels, avoiding the row and column gating delays of traditional scanning drives and eliminating signal lag caused by multiplexing. Furthermore, the gallium arsenide CMOS logic unit, thanks to the characteristics of gallium arsenide material, can significantly reduce the signal transmission delay of logic gate circuits, enabling rapid signal parsing and pulse width modulation, shortening the overall link time from signal input to pixel driving. Combined with the high-frequency adjustment characteristics of pulse width modulation signals, this effectively improves the smoothness of dynamic image transitions. In terms of high-frequency power consumption control, gallium arsenide heterojunction field-effect transistors have low on-resistance and stable threshold voltage, which significantly reduces Joule heat loss and static power consumption during high-frequency switching. The cascaded structure of the array driving unit and gallium arsenide CMOS logic unit ensures a short signal transmission path and excellent impedance matching, reducing signal attenuation and distortion at high frequencies and reducing the power consumption of auxiliary amplifier circuits.

[0031] Example 2: The auxiliary structure in the driving unit, used for large-area signal distribution, pixel switch control, and hierarchical interconnection, adopts gallium arsenide thin-film transistors (GaAsTFTs). The array driving unit contains several arranged gallium arsenide thin-film transistors. In the above embodiments, the specific arrangement of gallium arsenide thin-film transistors is not limited. A traditional matrix arrangement can be adopted, that is, gallium arsenide thin-film transistors are arranged regularly in the row and column directions to form a row and column intersecting array structure. The transistors in each row or column achieve centralized signal transmission and control through a common connection. Alternatively, an interleaved arrangement can be adopted, so that adjacent transistors are spatially staggered to reduce parasitic coupling between devices.

[0032] To improve the integration density of the cells and meet the requirements of high-resolution displays, this embodiment proposes an integration arrangement of gallium arsenide (GaAs) thin-film transistors (TFTs). The array driving unit adopts a multi-layer three-dimensional structure design, containing at least two layers of staggered GaAs TFTs. Each layer contains GaAs TFTs, and the transistors in different layers are spatially staggered to improve the integration density of the cells. The gate of each GaAs TFT layer is connected to a GaAs CMOS logic cell via an independent GaAs interconnect. The control signal transmission paths of each layer are independent, each receiving the driving signal from the GaAs CMOS logic cell independently through an interconnect made of GaAs material, avoiding signal crosstalk. The source and drain of adjacent GaAs TFT layers are interconnected through vertical GaAs vias. A via structure made of GaAs material in the vertical direction enables electrical connection between the source and drain of adjacent layers of transistors, constructing a three-dimensional circuit path. The channel length of a single GaAs TFT is 0.5-2 μm.

[0033] This multi-layered, staggered structure integrates more transistors within a limited planar space, significantly increasing the pixel control density of the array driving unit and meeting the demands of high-resolution displays. The independent gallium arsenide interconnect design reduces signal interference between transistors in different layers, ensuring the integrity and stability of gate control signal transmission and improving driving accuracy. Vertical gallium arsenide via interconnects achieve efficient electrical connections in the multi-layered structure, shortening inter-layer signal transmission paths, reducing parasitic resistance and capacitance, and facilitating high-frequency signal transmission. The 0.5-2μm channel length design, combined with the high electron mobility of gallium arsenide, balances transistor switching speed and power consumption, ensuring high-frequency response while avoiding the short-channel effect that can negatively impact performance stability. Through 3D integration, independent wiring, and precise parameter design, this structure improves integration density, control accuracy, and high-frequency performance while ensuring device stability and low power consumption.

[0034] Example 3: To improve the luminous efficiency, response speed, and functional integration of active display control devices, gallium arsenide luminous control modules can be further integrated into the active display control devices.

[0035] A gallium arsenide (GaAs) light-emitting control module refers to a functional module made of gallium arsenide, primarily composed of a gallium arsenide quantum well (GaAs) light-emitting diode (LED) and a gallium arsenide (GaAs) driver transistor. The GaAs driver transistor amplifies current and controls switching; its base is connected to the GaAs base driver circuit module to receive drive signals. When a suitable signal is input to the base, the transistor conducts, and current flows through the collector. The collector is connected to the anode of the GaAs quantum well LED, providing it with operating current and enabling it to emit light. The GaAs quantum well LED is the light-emitting component; its cathode is connected to the positive terminal of the power supply. Under forward voltage, electrons and holes recombine in the quantum well, emitting light of a specific wavelength. The emitter is grounded, providing a potential reference point for the transistor and forming a current loop.

[0036] While relying solely on a driver circuit module (such as an array of gallium arsenide heterojunction field-effect transistors) can achieve signal processing and driving, mismatches in materials and processes between the light-emitting unit and the driver unit can lead to response delays or efficiency losses. Further integration of a gallium arsenide light-emitting control module can reduce signal transmission losses between different materials through the collaborative work of devices of the same material (gallium arsenide). Simultaneously, by utilizing the high luminous efficiency of gallium arsenide quantum well light-emitting diodes and the fast switching characteristics of the driver transistors, efficient matching of the driver-light-emitting link can be achieved, ultimately improving the brightness, refresh rate, and stability of the display device.

[0037] To further improve the luminous performance, wavelength stability, and temperature adaptability of gallium arsenide quantum well light-emitting diodes (GADs), GADs can specifically incorporate 3 to 5 alternately grown GaAs / AlGaAs quantum wells. Each quantum well has a thickness of 5 to 10 nm, a barrier layer thickness of 15 to 25 nm, and a temperature coefficient of emission wavelength not exceeding 0.3 nm / ℃.

[0038] The structure of 3 to 5 alternating GaAs / AlGaAs quantum wells enhances the radiative recombination probability of electrons and holes through multilayer quantum confinement effects, thereby improving luminous efficiency. A quantum well thickness of 5 to 10 nm allows for precise control of quantum level spacing, ensuring the consistency and purity of the emitted wavelength. A barrier layer thickness of 15 to 25 nm effectively isolates adjacent quantum wells, preventing efficiency loss due to carrier overflow. Furthermore, the limitation of the emission wavelength temperature coefficient to no more than 0.3 nm / ℃ significantly reduces the impact of ambient temperature changes on the emission wavelength, ensuring color stability of the display image, making it particularly suitable for wide-temperature-range operating scenarios. This design, through precise optimization of quantum well structure parameters, achieves a synergistic improvement in luminous efficiency, wavelength stability, and temperature adaptability, matching the high-performance requirements of active display control devices.

[0039] To improve heat dissipation, gallium arsenide quantum well LED chips can be flip-chip bonded to a ceramic substrate. The ceramic substrate has high thermal conductivity, enabling rapid dissipation of heat generated by the chip, which helps improve device stability and lifespan, and reduces the risk of performance degradation due to overheating. Of course, other packaging methods can also be used, such as wire bonding, but this embodiment does not limit this approach. Example 4: To achieve real-time monitoring and closed-loop control of the displayed image and improve the dynamic adjustment accuracy and stability of the display device, an active display control device can be further equipped with a gallium arsenide photodetector module. The gallium arsenide photodetector module includes a gallium arsenide PIN photodiode and a gallium arsenide preamplifier circuit. The output terminal of the gallium arsenide PIN photodiode is connected to the input terminal of the gallium arsenide preamplifier circuit, and the output terminal of the gallium arsenide preamplifier circuit is connected to the feedback input terminal of the gallium arsenide-based drive circuit module.

[0040] This design uses gallium arsenide PIN photodiodes to collect light signals (such as brightness and light intensity distribution) from the display screen in real time. After the weak photocurrent signal is amplified by the gallium arsenide preamplifier circuit, it is fed back to the gallium arsenide-based driver circuit module, forming a closed-loop control link of detection-feedback-adjustment.

[0041] Compared to open-loop control without feedback, the gallium arsenide (GaAs) photodetector module can instantly detect brightness deviations or uniformity issues in the displayed image. By adjusting the output signal in real time through the drive circuit module, it ensures consistent display performance, making it particularly suitable for long-term operation or scenarios with changing ambient light. Furthermore, both the GaAs PIN photodiode and the preamplifier circuit are based on GaAs materials, matching the high-frequency response characteristics of the drive circuit module. This avoids signal delays between heterogeneous material devices, ensuring high-speed feedback and meeting the dynamic adjustment requirements of high refresh rate displays. The detection module and drive circuit module, based entirely on GaAs materials, are highly compatible in terms of process technology and temperature characteristics, reducing performance drift caused by material differences and improving the overall device's operational stability and environmental adaptability.

[0042] Example 5: In gallium arsenide-based driver circuit modules, the substrate material used to support devices and interconnect structures such as gallium arsenide heterojunction field-effect transistors and gallium arsenide CMOS logic cells is semi-insulating gallium arsenide (SI-GaAs). Semi-insulating gallium arsenide achieves its resistivity to 10⁻¹⁰ through doping (e.g., chromium, oxygen) or defect modulation. 7 Ω Above 1 cm, it exhibits electrical properties similar to an insulator, while maintaining the crystal structure and lattice matching of gallium arsenide, providing a stable substrate support for the epitaxial growth or thin film fabrication of the devices above.

[0043] Of course, besides semi-insulating gallium arsenide (GaAs) materials, the substrates for GaAs-based circuit modules can also be conductive GaAs substrates or heterojunction substrates, such as sapphire (Al2O3), silicon (Si), and silicon carbide (SiC). Compared to the other methods mentioned above, the high resistivity of semi-insulating GaAs can directly achieve electrical isolation between adjacent devices without additional isolation processes (such as ion implantation or oxide layer isolation), avoiding parasitic capacitance and resistance introduced by the isolation region and reducing signal crosstalk. Especially in high-frequency circuits, it can reduce coupling noise between devices and ensure the signal transmission integrity of GaAs CMOS logic cells and heterojunction field-effect transistors. Moreover, semi-insulating GaAs has the same lattice constant and thermal expansion coefficient as the GaAs device above it (such as AlGaAs / GaAs heterojunction), resulting in fewer interface defects during epitaxial growth and superior carrier mobility and high-frequency response characteristics (such as cutoff frequency and maximum oscillation frequency). In contrast, the lattice mismatch between heterojunction substrates (such as silicon) and GaAs leads to increased epitaxial layer defects and reduces the high-frequency performance of the device. Meanwhile, the semi-insulating substrate can reduce the absorption and reflection of high-frequency signals by the substrate, reduce signal transmission loss, and is especially suitable for the transmission of high-frequency signals such as pulse width modulation (PWM) drive signals, ensuring the signal synchronization between the array drive unit and the logic unit.

[0044] In this process, the surface of the semi-insulating gallium arsenide substrate may contain lattice defects or impurities. To reduce the impact of substrate defects on the upper functional layers, a 50-100 nm thick gallium arsenide buffer layer can be further formed on the substrate surface. Functional layers with specific structures are then formed sequentially through epitaxial growth. An n-type gallium arsenide channel layer and a p-type aluminum gallium arsenide capping layer are then grown sequentially on the surface of the buffer layer. First, an intrinsic (or lightly doped) gallium arsenide buffer layer with a thickness of 50-100 nm is prepared. Then, a gallium arsenide channel layer with n-type conductivity is grown on its surface. Finally, a p-type aluminum gallium arsenide capping layer is grown on the surface of the channel layer, forming a vertical stacked structure of substrate-buffer layer-channel layer-capping layer.

[0045] A 50-100 nm thick gallium arsenide (GaAs) buffer layer can reduce the impact of substrate defects on the upper functional layers through lattice reconstruction, lower the interface state density, and provide a flat, low-defect substrate for the subsequent growth of the channel layer. The n-type GaAs channel layer is the core region for carrier (electron) transport. By doping, a certain concentration of free electrons is formed, providing a channel for current conduction in devices such as field-effect transistors. The p-type aluminum gallium arsenide (AlGaAs) capping layer forms a heterojunction with the underlying n-type GaAs channel layer. It can confine the movement of carriers within the channel layer through a built-in electric field, while protecting the channel layer from damage by subsequent processes and providing a stable contact interface for device electrode fabrication.

[0046] The heterojunction formed by the p-type aluminum gallium arsenide capping layer and the n-type gallium arsenide channel layer has a stronger carrier confinement capability. Compared with the homojunction structure (such as the p-type gallium arsenide capping layer), it can more effectively confine the carriers in the channel layer, reduce carrier overflow, and improve the current gain and switching speed of the device.

[0047] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of disclosure in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the foregoing disclosed concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. An active display control device based on gallium arsenide optoelectronic devices, characterized in that, include: Gallium arsenide-based driver circuit module; The gallium arsenide-based driving circuit module includes cascaded array driving units and gallium arsenide CMOS logic units. The array driving unit is composed of gallium arsenide heterojunction field-effect transistors, and the array driving unit is electrically connected to each display pixel in a one-to-one correspondence. The gallium arsenide CMOS logic unit is used to receive external image signals and output pulse width modulation drive signals to the array drive unit.

2. The apparatus as claimed in claim 1, characterized in that, The gallium arsenide heterojunction field-effect transistor adopts an AlGaAs / GaAs heterojunction structure. The Al composition content of the AlGaAs barrier layer in the AlGaAs / GaAs heterojunction structure is 0.25-0.35, and the thickness of the GaAs channel layer is 10-20 nm.

3. The apparatus as described in claim 1, characterized in that, The array driving unit comprises at least two layers of staggered gallium arsenide thin-film transistors; The gate of each gallium arsenide thin-film transistor is connected to the gallium arsenide CMOS logic cell through an independent gallium arsenide interconnect. The source and drain of adjacent gallium arsenide thin-film transistors are interconnected through vertical gallium arsenide vias. The channel length of a single gallium arsenide thin-film transistor is 0.5-2 μm.

4. The apparatus as described in claim 3, characterized in that, The gate insulating layer of the gallium arsenide thin film transistor is a hafnium oxide-aluminum oxide composite layer; The total thickness of the hafnium oxide-aluminum oxide composite layer is 20 to 50 nm, the dielectric constant is not less than 15, and the leakage current density does not exceed 10. -8 A / cm².

5. The apparatus as claimed in claim 1, characterized in that, Also includes: Gallium arsenide light emission control module; The gallium arsenide light emission control module includes: a gallium arsenide quantum well light emission diode and a gallium arsenide driver transistor; The base of the gallium arsenide driving transistor is connected to the output terminal of the gallium arsenide-based driving circuit module, the collector of the gallium arsenide driving transistor is connected to the anode of the gallium arsenide quantum well light-emitting diode, the emitter of the gallium arsenide driving transistor is grounded, and the cathode of the gallium arsenide quantum well light-emitting diode is connected to the positive terminal of the power supply.

6. The apparatus as claimed in claim 5, characterized in that, The gallium arsenide quantum well light-emitting diode comprises 3 to 5 alternately grown GaAs / AlGaAs quantum wells; The thickness of each quantum well is 5 to 10 nm, the thickness of the barrier layer is 15 to 25 nm, and the temperature coefficient of the emission wavelength does not exceed 0.3 nm / ℃.

7. The apparatus as claimed in claim 6, characterized in that, The gallium arsenide quantum well light-emitting diode is packaged using a ceramic substrate flip-chip structure.

8. The apparatus as claimed in claim 1, characterized in that, Also includes: Gallium arsenide photodetector module; The gallium arsenide photodetector module includes: a gallium arsenide PIN photodiode and a gallium arsenide preamplifier circuit; The output terminal of the gallium arsenide PIN photodiode is connected to the input terminal of the gallium arsenide preamplifier circuit, and the output terminal of the gallium arsenide preamplifier circuit is connected to the feedback input terminal of the gallium arsenide-based driving circuit module.

9. The apparatus as claimed in claim 1, characterized in that, The substrate of the gallium arsenide-based driving circuit module is made of semi-insulating gallium arsenide material.

10. The apparatus as claimed in claim 9, characterized in that, The substrate surface is provided with a gallium arsenide buffer layer with a thickness of 50-100 nm, and an n-type gallium arsenide channel layer and a p-type aluminum gallium arsenide capping layer are grown sequentially on the surface of the buffer layer.

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