Wiring circuit board and method for manufacturing wiring circuit board

Abstract

The present application provides a wiring circuit substrate provided with a wiring structure layer and a metal reinforcing layer in contact with one face thereof, which can suppress the generation of gaps at the time of sealing without reducing the reinforcing effect of the metal reinforcing layer, and a manufacturing method thereof. The metal reinforcing layer has an opening portion that penetrates the metal reinforcing layer in the thickness direction for connecting a semiconductor chip to the wiring circuit substrate. In a cross section of the metal reinforcing layer in the thickness direction including the opening portion, if a line corresponding to a surface of the metal reinforcing layer on the side opposite the wiring structure layer is denoted as line A, a line corresponding to a surface of the metal reinforcing layer on the wiring structure layer side is denoted as line B, and an intersection of one of two side lines of the shape of the opening portion with line A is denoted as intersection a and an intersection with line B is denoted as intersection b, then an angle formed by a ray BH, which is a line in line B starting from intersection b on the side opposite the opening portion, and a line segment C, which is a line connecting intersection a and intersection b, is less than 90°. α less than 90°.

Description

Technical Field

[0001] The present invention relates to a wiring circuit board and a method for manufacturing the wiring circuit board, as well as a semiconductor package and an electronic device comprising the wiring circuit board. Background Technology

[0002] Wiring circuit boards are manufactured, for example, by laminating conductor portions such as wiring and various insulating layers onto a substrate. The conductor portions and insulating layers are patterned, for example, by photolithography.

[0003] As a semiconductor device having a wiring circuit substrate and a semiconductor chip, for example, a semiconductor device has been proposed, which includes: a semiconductor chip; a substrate having a first region and a second region, the first region being a region disposed on the underside of the semiconductor chip and on which the semiconductor chip is mounted, the second region being a region having a conductor element including at least one of a circuit pattern and an electrical component; and an insulating sheet covering the conductor element (see Patent Document 1).

[0004] Additionally, as a wiring circuit substrate, for example, a printed circuit substrate has been proposed, comprising: a substrate including a plurality of wiring layers; a first metal pillar disposed on the substrate and connected to at least a portion of the uppermost wiring layer among the plurality of wiring layers; a second metal pillar disposed on the substrate and connected to at least other portions of the uppermost wiring layer among the plurality of wiring layers; a resist layer disposed on the substrate and embedding at least a portion of each of the first and second metal pillars; and a metal via penetrating the resist layer above the second metal pillar and connected to the second metal pillar (see Patent Document 2).

[0005] In some embodiments of these solutions, reinforcements are mounted on the substrate or printed circuit board to reduce deformation and warping (for example, see paragraph 0018 of Patent Document 1 and paragraph 0023 of Patent Document 2).

[0006] Additionally, a redistribution substrate for electrically connecting a first electrical element and a second electrical element is proposed. The redistribution substrate comprises: a first insulating layer having a first main surface and a second main surface facing opposite directions; a first terminal portion formed to expose the first main surface of the first insulating layer; a second terminal portion formed to expose the second main surface of the first insulating layer; a conductor layer connecting the first terminal portion and the second terminal portion within the first insulating layer; a metal support formed on the first main surface of the first insulating layer, having an opening; and a second insulating layer formed on the inner side of the opening of the metal support. The opening is arranged to overlap with the first terminal portion when viewed in a first direction perpendicular to the first main surface of the first insulating layer. The first terminal portion is arranged to be electrically connected to the first electrical element through or within the opening, and the second terminal portion is arranged to be electrically connected to the second electrical element (see Patent Document 3).

[0007] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2023-118943 Patent Document 2: Japanese Patent Application Publication No. 2024-18878 Patent Document 3: International Publication No. 2023 / 080097 Summary of the Invention The technical problem that the invention aims to solve Providing a metal reinforcing layer (metal support) such as a reinforcing member on the surface of the wiring circuit board is effective in strengthening the wiring circuit board (reducing warpage and deformation). Typically, the reinforcing member has an opening in which a semiconductor chip is placed. For strengthening the wiring circuit board, it is preferable that the opening of the metal reinforcing layer is small.

[0008] Here, after a wiring circuit board containing a semiconductor chip is placed on a motherboard or other substrate within an opening in the metal reinforcing layer, it is sealed with a sealing resin composition to protect the semiconductor chip and the wiring circuit board. However, if the gap between the edge of the opening in the metal reinforcing layer and the semiconductor chip is narrow during sealing, the sealing resin composition cannot adequately penetrate this gap, sometimes leaving voids inside the opening in the metal reinforcing layer after sealing. If these voids remain, the mechanical strength weakens, leading to defects such as cracking or breakage. In this respect, a larger opening in the metal reinforcing layer is preferable.

[0009] Thus, from the viewpoint of strengthening the wiring circuit board, it is preferable to have a smaller opening in the metal reinforcement layer; from the viewpoint of reducing gaps during sealing, it is preferable to have a larger opening in the metal reinforcement layer, and it is desirable to balance both.

[0010] The purpose of this invention is to provide a wiring circuit board that can suppress the formation of gaps during sealing without reducing the reinforcing effect of the metal reinforcing layer on the wiring circuit board, a method for manufacturing the wiring circuit board, a semiconductor package containing the wiring circuit board, and an electronic device.

[0011] Technical solutions for solving technical problems In order to solve the above-mentioned technical problems, the inventors conducted in-depth research and found that the above-mentioned technical problems could be solved, thereby completing the present invention with the following main purpose.

[0012] That is, the present invention includes the following.

[0013] [1] A wiring circuit board comprising: a wiring structure layer having an insulating layer and a wiring layer; and a metal reinforcement layer in contact with one surface of the wiring structure layer. The surface of the metal reinforcement layer opposite to the wiring structure layer is exposed. The metal reinforcement layer has an opening for connecting a semiconductor chip to the wiring circuit substrate, the opening penetrating the metal reinforcement layer in the thickness direction. In the cross-section of the metal reinforcing layer in the thickness direction, including the opening, If the line on the surface of the metal reinforcing layer opposite to the wiring structure layer is denoted as line A; The line on the surface corresponding to the wiring structure layer of the metal reinforcement layer is denoted as line B; The opening has two side lines. The intersection of one of the two side lines with line A is denoted as intersection point a, and the intersection of the side line with line B is denoted as intersection point b. The line connecting the intersection point a and the intersection point b is denoted as line segment C; The line in line B that originates from the intersection point b and runs on the opposite side to the opening is denoted as ray BH. The angle between ray BH and line segment C is... α Less than 90°.

[0014] [2] According to the wiring circuit board described in [1], wherein the corner α It is between 45° and 90°.

[0015] [3] According to the wiring circuit board of [1] or [2], the metal reinforcing layer has a second opening that penetrates the metal reinforcing layer in the thickness direction in addition to the opening.

[0016] [4] According to the wiring circuit board described in [1] or [2], the metal reinforcing layer, in addition to the opening, also has a second opening and a third opening that penetrate the metal reinforcing layer in the thickness direction. In any cross section X along the thickness direction of the metal reinforcing layer, the second opening and the third opening are formed in a manner that sandwiches the opening.

[0017] [5] According to the wiring circuit board of [4], in the section Y of the metal reinforcement layer in the thickness direction which is orthogonal to the section X, the metal reinforcement layer does not have an opening that penetrates the metal reinforcement layer in the thickness direction.

[0018] [6] According to the wiring circuit board of [4], the metal reinforcing layer further has a fourth opening penetrating the metal reinforcing layer along the thickness direction. The fourth opening is formed such that the metal reinforcing layer includes the fourth opening in a cross section Y, which is orthogonal to the cross section X, in the thickness direction.

[0019] [7] The wiring circuit board according to any one of [1] to [6], wherein the wiring structure layer has an insulating layer other than the insulating layer and a wiring layer other than the wiring layer inside the opening of the metal reinforcing layer.

[0020] [8] The wiring circuit board according to any one of [1] to [6], wherein the wiring structure layer does not have an insulating layer other than the insulating layer and a wiring layer other than the wiring layer inside the opening of the metal reinforcing layer.

[0021] [9] A semiconductor package comprising a wiring circuit substrate as described in any one of [1] to [8].

[0022]

[10] An electronic device comprising the semiconductor package described in [9].

[0023]

[11] A method for manufacturing a wiring circuit board, used to manufacture the wiring circuit board described in any one of [1] to [8], the method comprising: The process of forming the opening that extends through the thickness direction of the metal reinforcing layer in the metal reinforcing layer. The process of forming the opening includes: making the angle α The opening is formed at an angle of less than 90°.

[0024]

[12] According to the manufacturing method of the wiring circuit board described in

[11] , the step of forming the opening includes: wet etching to make the corner αThe opening is formed at an angle of less than 90°.

[0025] Invention Effects According to the present invention, a wiring circuit board capable of suppressing the formation of sealing gaps without reducing the reinforcing effect of the metal reinforcing layer on the wiring circuit board, a method for manufacturing the wiring circuit board, a semiconductor package comprising the wiring circuit board, and an electronic device are provided. Attached Figure Description

[0026] Figure 1A This is a schematic diagram of one embodiment of a wiring circuit board.

[0027] Figure 1B This is a schematic diagram of one embodiment of a wiring circuit board.

[0028] Figure 2A This is a top view of another embodiment of the wiring circuit board.

[0029] Figure 2B yes Figure 2A XX cross-sectional view of the wiring circuit board.

[0030] Figure 2C yes Figure 2A YY cross-sectional view of the wiring circuit board.

[0031] Figure 3A This is a top view of another embodiment of the wiring circuit board.

[0032] Figure 3B yes Figure 3A XX cross-sectional view of the wiring circuit board.

[0033] Figure 3C yes Figure 3A YY cross-sectional view of the wiring circuit board.

[0034] Figure 4A This is a schematic diagram (1) illustrating an example of a method for manufacturing a wiring circuit board.

[0035] Figure 4B This is a schematic diagram (2) illustrating an example of a method for manufacturing a wiring circuit board.

[0036] Figure 4C This is a schematic diagram (3) illustrating an example of a method for manufacturing a wiring circuit board.

[0037] Figure 4D This is a schematic diagram (4) illustrating an example of a method for manufacturing a wiring circuit board.

[0038] Figure 4EThis is a schematic diagram (5) illustrating an example of a method for manufacturing a wiring circuit board.

[0039] Figure 4F This is a schematic diagram (6) illustrating an example of a method for manufacturing a wiring circuit board.

[0040] Figure 4G This is a schematic diagram (7) illustrating an example of a method for manufacturing a wiring circuit board.

[0041] Figure 4H This is a schematic diagram (8) illustrating an example of a method for manufacturing a wiring circuit board.

[0042] Figure 4I This is a schematic diagram (9) illustrating an example of a method for manufacturing a wiring circuit board.

[0043] Figure 5 This is a schematic diagram of another embodiment of the wiring circuit board.

[0044] Figure 6 This is a schematic diagram of another embodiment of the wiring circuit board.

[0045] Figure 7 This is a schematic diagram of another embodiment of the wiring circuit board.

[0046] Figure 8A This is a schematic diagram of another embodiment of the wiring circuit board.

[0047] Figure 8B This is a schematic diagram of another embodiment of the wiring circuit board.

[0048] Figure 9A This is a schematic diagram of one embodiment of a wiring circuit board.

[0049] Figure 9B yes Figure 9A Example of the structure of region X of the wiring circuit board.

[0050] Figure 9C yes Figure 9A Another structural example of region X of the wiring circuit board.

[0051] Figure 9D yes Figure 9A Another structural example of region X of the wiring circuit board.

[0052] Figure 9E yes Figure 9A Another structural example of region X of the wiring circuit board.

[0053] Figure 10 This is a schematic diagram of an example of a wiring circuit board connected to a semiconductor chip.

[0054] Explanation of reference numerals in the attached figures 1 Metal reinforcement layer 1a Opening 1b Second opening 1c Third opening 1d Fourth opening 1e Fifth opening 2. Wiring Structure Layer 21 Insulation layer 21a Through hole 22 Wiring Layer 23 Second Insulation Layer 23a Through hole 24 Second wiring layer 25 Third Insulation Layer 25a Through Hole 26 Third wiring layer 27 Fourth Insulation Layer 27a Through hole 28 Fourth wiring layer 29 Fifth Insulation Layer 100 Wiring Circuit Board 200 Semiconductor Chips 201 Semiconductor chip body 202 Welding ball. Detailed Implementation

[0055] (Wiring circuit board, and method for manufacturing wiring circuit board) The wiring circuit board of the present invention has a wiring structure layer and a metal reinforcement layer.

[0056] The metal reinforcement layer is in contact with one side of the wiring structure layer.

[0057] The wiring structure layer has an insulating layer and a wiring layer. The wiring structure layer may also further have a second insulating layer, a third insulating layer, a fourth insulating layer, a fifth insulating layer, a second wiring layer, a third wiring layer, a fourth wiring layer, etc.

[0058] In the wiring circuit board, the surface of the metal reinforcement layer opposite to the wiring structure layer is exposed.

[0059] The metal reinforcement layer has an opening for enabling the semiconductor chip to be connected to the wiring circuit board, the opening penetrating the metal reinforcement layer in the thickness direction.

[0060] In the cross-section of the metal reinforcing layer in the thickness direction, including the opening, If the line on the surface of the metal reinforcement layer opposite to the wiring structure layer is denoted as line A; The line on the surface of the wiring structure layer corresponding to the metal reinforcement layer is denoted as line B; The opening has two side lines. The intersection of one of the side lines with line A is denoted as intersection point a, and the intersection of the other side line with line B is denoted as intersection point b. Let the line connecting intersection point a and intersection point b be denoted as line segment C; The line in line B that originates at intersection point b and runs on the opposite side to the opening is denoted as ray BH. Then the angle between ray BH and line segment C is... α Less than 90°.

[0061] The following uses Figure 1A and Figure 1B An example of the wiring circuit board of the present invention will be described.

[0062] Figure 1A and Figure 1B This is a cross-sectional schematic diagram of an example of a wiring circuit board.

[0063] Figure 1A and Figure 1B The wiring circuit board has the same structure. However, in Figure 1B In the middle, it is depicted as an illustrative angle. α Auxiliary lines.

[0064] The wiring circuit board 100 has a metal reinforcement layer 1 and a wiring structure layer 2.

[0065] The metal reinforcement layer 1 is in contact with one side of the wiring structure layer 2.

[0066] The surface of the metal reinforcement layer 1, on the side opposite to the wiring structure layer 2, is exposed.

[0067] The metal reinforcement layer 1 has an opening 1a for connecting a semiconductor chip to a wiring circuit substrate 100, the opening 1a penetrating the metal reinforcement layer 1 in the thickness direction.

[0068] The wiring structure layer 2 has an insulating layer 21 and a wiring layer 22. The wiring structure layer 2 further has a second insulating layer 23, a second wiring layer 24, a third insulating layer 25, a third wiring layer 26, and a fourth insulating layer 27.

[0069] In the wiring structure layer 2, an insulating layer 21, a wiring layer 22, a second insulating layer 23, a second wiring layer 24, a third insulating layer 25, a third wiring layer 26, and a fourth insulating layer 27 are sequentially provided.

[0070] Insulating layer 21 is in contact with metal reinforcing layer 1. Wiring layer 22 is patterned. Second insulating layer 23 fills the gaps in the pattern of wiring layer 22 and covers wiring layer 22. Second wiring layer 24 is patterned. Third insulating layer 25 fills the gaps in the pattern of second wiring layer 24 and covers second wiring layer 24. Third wiring layer 26 is patterned. Fourth insulating layer 27 fills the gaps in the pattern of third wiring layer 26 and covers third wiring layer 26. On the other hand, a portion of third wiring layer 26 is exposed through a through-hole in fourth insulating layer 27.

[0071] A portion of the wiring layer 22 fills the through-hole of the insulating layer 21. A portion of the second wiring layer 24 fills the through-hole of the second insulating layer 23. A portion of the third wiring layer 26 fills the through-hole of the third insulating layer 25.

[0072] A portion of wiring layer 22 is in electrical contact with a portion of second wiring layer 24. A portion of second wiring layer 24 is in electrical contact with a portion of third wiring layer 26.

[0073] exist Figure 1A and Figure 1B In the wiring circuit board 100 shown, a portion of the wiring layer 22 with the through-hole of the buried insulating layer 21 is exposed at the opening 1a of the metal reinforcing layer 1. The portion of the wiring layer 22 exposed at the opening 1a is used as a terminal for connection with a semiconductor chip.

[0074] exist Figure 1A and Figure 1B In the wiring circuit board 100, the cross-sectional shape of the opening 1a in the thickness direction of the metal reinforcing layer 1 is a tapered shape in which the width of the opening 1a on the surface of the metal reinforcing layer 1 on the side of the wiring structure layer 2 is narrower than the width of the opening 1a on the surface of the metal reinforcing layer 1 opposite to the side of the wiring structure layer 2. Here, the width of the opening 1a refers to its length in a direction orthogonal to the thickness direction of the metal reinforcing layer 1.

[0075] That is, in the cross-section including the opening 1a in the thickness direction of the metal reinforcing layer 1, If the line on the surface of the metal reinforcement layer 1 that is opposite to the wiring structure layer 2 is denoted as line A; The line on the surface of the wiring structure layer 2 corresponding to the metal reinforcement layer 1 is denoted as line B; The shape of the opening 1a has two side lines. The intersection of one of the side lines 1aa with line A is denoted as intersection point a, and the intersection of one of the side lines 1aa with line B is denoted as intersection point b. Let the line connecting intersection point a and intersection point b be denoted as line segment C; The line on the opposite side of the opening 1a in line B, starting from the intersection point b, is denoted as ray BH. Then the angle between ray BH and line segment C is... α Less than 90°.

[0076] It should be explained that the angle should be calculated. α The cross section is preferably orthogonal to the edge of the opening (e.g., Figure 2A and Figure 3A (XX section, YY section). Given that the opening shape is polygonal when viewed from the thickness direction, calculate the angle. α The cross section is preferably orthogonal to the relatively longest side (e.g., the longest side) among all the sides of the polygon. Additionally, the angle is calculated. α The cross-section can be orthogonal to the side at any position on the side of the opening, but it is preferable to be orthogonal to the side near the center. It should be noted that as long as the angle can be determined... α If the angle is less than 90°, the edge and the cross section do not need to intersect at a full 90° angle; they only need to intersect at an angle approximately close to 90°.

[0077] Thus, in the wiring circuit board, the metal reinforcement layer 1 has an angle α Construction with an angle of less than 90°.

[0078] This increases the opening area of ​​the opening 1a on the surface of the metal reinforcing layer 1 opposite to the wiring structure layer 2, thus widening the gap between the edge of the opening 1a and the semiconductor chip when the semiconductor chip is placed in the opening 1a. Furthermore, the opening 1a is shaped like a mortar. As a result, the sealing resin composition can fully penetrate this gap, suppressing any residual voids in the opening 1a of the metal reinforcing layer 1 after sealing.

[0079] Furthermore, since the opening area of ​​the opening 1a on the surface of the wiring structure layer 2 side of the metal reinforcement layer 1 is small, the volume of the metal portion of the metal reinforcement layer 1 can be increased. As a result, the strengthening effect of the metal reinforcement layer 1 can be prevented from decreasing.

[0080] horn α As long as it is less than 90°, it is acceptable as a lower limit, with no particular restrictions. However, from the perspective of preventing the opening area on the surface of the metal reinforcement layer opposite to the wiring structure layer from becoming too large, thus preventing the volume of the metal portion of the metal reinforcement layer from becoming smaller, the angle... α Preferably, the angle is 45° or higher, more preferably 50° or higher, and particularly preferably 55° or higher.

[0081] horn αLess than 90° is acceptable. From the viewpoint that the distance (gap) between the edge of the opening of the metal reinforcement layer and the semiconductor chip can be increased when the semiconductor chip is placed in the opening, it is preferable to be 85° or less, more preferably 80° or less, and particularly preferably 75° or less.

[0082] Metal reinforcement layers are, for example, elements used to ensure the rigidity of wiring circuit boards.

[0083] There are no particular limitations on the material used for the metal reinforcement layer; examples include Cu, Cu alloys, Al, stainless steel, FeNi alloys such as 42 alloy, and combinations thereof. However, from the viewpoint of thermal and electrical conductivity, Cu, Cu alloys, Al, and stainless steel are preferred.

[0084] There are no particular limitations on the thickness of the metal reinforcement layer, for example, 10. μ m or more, preferably 15 μ m or more; in addition, for example, 100 μ Below m, preferably 75 μ Below m.

[0085] In this invention, "thickness" refers to the dimension in the thickness direction of the metal reinforcing layer. The thickness direction of the metal reinforcing layer is the direction orthogonal to the surface direction of the metal reinforcing layer.

[0086] There are no particular limitations on the material used for the insulating layers (e.g., the second, third, fourth, and fifth insulating layers) in the wiring structure layers; for example, synthetic resins can be used. Examples of synthetic resins include polyimide resins, epoxy resins, polyether nitrile resins, polyethersulfone resins, polyethylene terephthalate, polyethylene naphthalate, and polyvinyl chloride. From the viewpoint of excellent heat resistance, low linear expansion, and insulation withstand voltage, polyimide resins and epoxy resins are preferred.

[0087] The insulation layer may or may not contain fillers, but when it does not contain fillers, it has excellent insulation properties and excellent suppression of leakage current.

[0088] The insulation layer may or may not contain glass fibers. Insulation layers containing glass fibers, such as glass epoxy resin represented by FR4 (Flame Retardant Type 4), are made by impregnating glass fiber cloth in a synthetic resin.

[0089] There are no particular limitations on the thickness of the insulating layer, for example, it can be 1. μ m or more, preferably 3 μ m or more; in addition, for example, 35 μ Below m, preferably 20 μ Below m.

[0090] Materials used for wiring layers (e.g., wiring layer, second wiring layer, third wiring layer, fourth wiring layer) in a wiring structure can include, for example, metallic materials. Examples of metallic materials include copper, nickel, gold, solder, and alloys thereof.

[0091] There are no particular limitations on the thickness of the wiring layer, for example, it can be 3. μ m or more, preferably 5 μ m or more; in addition, for example, 50 μ Below m, preferably 30 μ Below m.

[0092] The wiring structure layer may have a seed layer (not shown). The seed layer is used as a conductive layer for electroplating.

[0093] Materials that can be used as seed layers include, for example, copper, chromium, nickel, and their alloys.

[0094] The metal reinforcement layer may also have openings other than those for connecting the semiconductor chip to the wiring circuit substrate. Such openings are, for example, openings that penetrate the metal reinforcement layer in the thickness direction. These openings are formed, for example, to reduce the warpage of the wiring structure layer.

[0095] Alternatively, the metal reinforcement layer may also have a second opening and a third opening as openings other than the first opening (for connecting the semiconductor chip to the wiring circuit substrate). Such openings are, for example, openings that penetrate the metal reinforcement layer in the thickness direction. Such openings are formed, for example, to reduce the warpage of the wiring structure layer.

[0096] The second and third openings are formed, for example, such that the first opening is sandwiched within an arbitrary cross-section X in the thickness direction of the metal reinforcing layer. Regarding this embodiment, using... Figures 2A-2B As will be described below.

[0097] A portion of the wiring layer can also be exposed as a terminal in the second opening.

[0098] A portion of the wiring layer can also be exposed as a terminal in the third opening.

[0099] In one example of a wiring circuit board, in a section Y of the metal reinforcement layer that is orthogonal to the section X in the thickness direction, the metal reinforcement layer does not have an opening penetrating the metal reinforcement layer in the thickness direction.

[0100] Regarding this implementation method, Figures 2A to 2C As will be described below.

[0101] In another example of a wiring circuit board, the metal reinforcement layer has a fourth opening in addition to the first opening, the second opening, and the third opening. The fourth opening is an opening that penetrates the metal reinforcement layer in the thickness direction.

[0102] In this example, the fourth opening is formed such that the metal reinforcing layer is included in the cross section Y, which is orthogonal to the cross section X in the thickness direction.

[0103] In another example of a wiring circuit board, the metal reinforcing layer has a fourth opening and a fifth opening in addition to the first opening, the second opening, and the third opening. The fourth opening and the fifth opening are openings that penetrate the metal reinforcing layer in the thickness direction.

[0104] For example, the fourth and fifth openings are formed such that the metal reinforcing layer is included in the cross section Y, which is orthogonal to the cross section X in the thickness direction.

[0105] The fourth and fifth openings are formed, for example, such that the first opening is sandwiched within the cross-section Y. Regarding this embodiment, using... Figures 3A-3C As will be described below.

[0106] A portion of the wiring layer can also be exposed as a terminal in the fourth opening.

[0107] A portion of the wiring layer can also be exposed as a terminal in the fifth opening.

[0108] The wiring structure layer may also have other insulating layers besides the insulating layer and other wiring layers besides the wiring layer inside the opening of the metal reinforcement layer. Regarding this embodiment, [the text continues with further details about the implementation and its related technologies]. Figures 5-6 As will be described below.

[0109] The wiring structure layer may also not have any insulating layers other than the insulating layer and any wiring layers other than the wiring layer inside the opening of the metal reinforcement layer. Examples of this embodiment include... Figure 1A and Figure 1B The implementation method shown.

[0110] Figures 2A to 2C This is another example of a wiring circuit board.

[0111] Figure 2A This is a top view of an example of a wiring circuit board.

[0112] Figure 2B yes Figure 2A The XX section is a cross-sectional view. The XX section is orthogonal to the side of the opening 1a.

[0113] Figure 2C yes Figure 2A The YY section diagram. It should be noted that the YY section is orthogonal to the XX section. Furthermore, the YY section is orthogonal to the edge of the opening 1a.

[0114] exist Figures 2A to 2C In the wiring circuit board 100 shown, the metal reinforcing layer 1, in addition to having an opening 1a, also has a second opening 1b and a third opening 1c. Figure 2B As shown, the second opening 1b penetrates the metal reinforcing layer 1 in the thickness direction. Figure 2B As shown, the third opening 1c penetrates the metal reinforcing layer 1 in the thickness direction.

[0115] exist Figure 2A In the diagram, the opening 1a is roughly rectangular in shape when viewed from above. Figure 2A In this case, the four corners of the rectangle are chamfered, but the four corners can also be right angles.

[0116] exist Figure 2B In the XX cross-sectional view, the second opening 1b and the third opening 1c are formed in such a way that they sandwich the opening 1a.

[0117] In addition, Figure 2C In the YY cross-sectional view, the metal reinforcing layer 1 does not have an opening that penetrates through the metal reinforcing layer 1 in the thickness direction.

[0118] like Figure 2B As shown, in the wiring structure layer 2, a portion of the wiring layer 22 can also be exposed as a terminal in the second opening 1b and the third opening 1c.

[0119] Figures 3A-3C This is another example of a wiring circuit board.

[0120] Figure 3A This is a top view of an example of a wiring circuit board.

[0121] Figure 3B yes Figure 3A The XX section is a cross-sectional view. The XX section is orthogonal to the side of the opening 1a.

[0122] Figure 3C yes Figure 3A The YY section diagram. It should be noted that the YY section is orthogonal to the XX section. Furthermore, the YY section is orthogonal to the edge of the opening 1a.

[0123] exist Figures 3A-3C In the wiring circuit board 100 shown, the metal reinforcing layer 1, in addition to having an opening 1a, also has a second opening 1b, a third opening 1c, a fourth opening 1d, and a fifth opening 1e. For example... Figure 3BAs shown, the second opening 1b penetrates the metal reinforcing layer 1 in the thickness direction. Figure 3B As shown, the third opening 1c penetrates the metal reinforcing layer 1 in the thickness direction. Figure 3C As shown, the fourth opening 1d penetrates the metal reinforcing layer 1 in the thickness direction. Figure 3C As shown, the fifth opening 1e penetrates the metal reinforcement layer 1 in the thickness direction.

[0124] exist Figure 3A In the diagram, the opening 1a is roughly rectangular in shape when viewed from above. Figure 3A In this case, the four corners of the rectangle are chamfered, but the four corners can also be right angles.

[0125] exist Figure 3B In the XX cross-sectional view, the second opening 1b and the third opening 1c are formed in such a way that they sandwich the opening 1a.

[0126] exist Figure 3C In the YY cross-sectional view, the fourth opening 1d and the fifth opening 1e are formed in a manner that sandwiches the opening 1a.

[0127] like Figure 3B and Figure 3C As shown, in the wiring structure layer 2, a portion of the wiring layer 22 can also be exposed as a terminal in the second opening 1b, the third opening 1c, the fourth opening 1d, and the fifth opening 1e.

[0128] There is no particular limitation on the area of ​​the openings in the metal reinforcement layer. When the metal reinforcement layer is viewed from the thickness direction (top view), the area of ​​all openings is preferably 60% to 99% of the total area of ​​the metal reinforcement layer when viewed from the thickness direction, and more preferably 70% to 95%. If it is above the lower limit, it is advantageous in terms of being able to place larger semiconductor chips; if it is below the upper limit, it is advantageous in terms of preventing warping.

[0129] It should be noted that, in Figure 2A In this case, the area of ​​all openings when viewing the metal reinforcing layer from the thickness direction (top view) refers to the total opening area of ​​opening 1a, the second opening 1b, and the third opening 1c. Figure 2A In the case of viewing the metal reinforcement layer from the thickness direction, the total area of ​​the metal reinforcement layer refers to the total area of ​​the metal reinforcement layer including the opening 1a, the second opening 1b and the third opening 1c.

[0130] The method for manufacturing the wiring circuit board of the present invention includes a step of forming an opening in a metal reinforcing layer that extends through the thickness direction of the metal reinforcing layer.

[0131] Furthermore, the process of forming the opening includes: making the angleα The opening is formed at an angle of less than 90°.

[0132] As to make the angle α There are no particular limitations on the method of forming the opening at an angle of less than 90°; for example, etching can be used. As an example of etching, wet etching can be used.

[0133] As a method for forming an opening by wet etching, the following methods (1) to (4) can be cited as examples.

[0134] (1) A photoresist film is formed on the surface of the metal reinforcement layer opposite to the wiring structure layer. (2) A photoresist pattern is formed by selective exposure and development of the photoresist film (partial exposure of the metal reinforcement layer). (3) Perform wet etching on the exposed metal reinforcement layer (e.g., wet etching using ferric chloride). (4) Remove the photoresist film As control angle α One method, for example, is to control the spray pressure during wet etching of a metal reinforcement layer using a spray method. For instance, by reducing the spray pressure, the angle can be reduced. α .

[0135] There are no particular restrictions on the method of forming the wiring structure layer in the manufacturing method of the wiring circuit board.

[0136] use Figures 4A to 4I right Figure 1A and Figure 1B An embodiment of the manufacturing method of the wiring circuit board shown will be described.

[0137] First, prepare the metal reinforcement layer 1 ( Figure 4A ).

[0138] Next, an insulating layer 21 with a through hole 21a is formed on one surface of the metal reinforcing layer 1. Figure 4B The formation of the insulating layer 21 having the through hole 21a can be carried out, for example, as follows.

[0139] • Coat with a photosensitive resin composition containing photosensitive polyimide and dry it. • Selective exposure and development of the formed photosensitive polyimide film Next, a patterned wiring layer 22 is formed on the insulating layer 21 and inside the through hole 21a. Figure 4C The wiring layer 22 can be formed, for example, as follows.

[0140] • A seed layer (not shown) is formed on the insulating layer 21. • A photoresist film is formed on the seed layer (not shown). • A resist pattern is formed by selective exposure and development of the photoresist film (partial exposure of the seed layer). • Coating the exposed seed layer • Remove the photoresist film and remove unwanted seed layers. Through the above steps, a patterned wiring layer 22 is formed. It should be noted that a portion of the wiring layer 22 fills the through-holes in the insulating layer 21.

[0141] Next, a second insulating layer 23 with through holes 23a is formed on the wiring layer 22. Figure 4D It should be noted that the second insulating layer 23 covers the patterned wiring layer 22. The second insulating layer 23 can be formed, for example, by coating a photosensitive resin composition containing photosensitive polyimide and drying it, and selectively exposing and developing the formed photosensitive polyimide film.

[0142] Next, a patterned second wiring layer 24 is formed on the second insulating layer 23 and within the through hole 23a. Figure 4E The formation of the second wiring layer 24 can be performed, for example, as follows.

[0143] A seed layer (not shown) is formed on the second insulating layer 23. • A photoresist film is formed on the seed layer (not shown). • A resist pattern is formed by selective exposure and development of the photoresist film (partial exposure of the seed layer). • Electroplating is performed on the exposed seed layer. • Remove the photoresist film and remove unwanted seed layers. The patterned electroplated coating formed is the second wiring layer 24.

[0144] Through the above steps, a patterned second wiring layer 24 is formed. It should be noted that a portion of the second wiring layer 24 fills the through-holes in the second insulating layer 23.

[0145] Next, a third insulating layer 25 with through holes 25a is formed on the second wiring layer 24. Figure 4F The third insulating layer 25 covers the patterned second wiring layer 24. The formation of the third insulating layer 25 can be performed, for example, by coating a photosensitive resin composition containing photosensitive polyimide and drying it, and selectively exposing and developing the formed photosensitive polyimide film.

[0146] Next, a patterned third wiring layer 26 is formed on the third insulating layer 25 and within the through hole 25a. Figure 4G The formation of the third wiring layer 26 can be performed, for example, as follows.

[0147] • A seed layer (not shown) is formed on the third insulating layer 25. • A photoresist film is formed on the seed layer (not shown). • A resist pattern is formed by selective exposure and development of the photoresist film (partial exposure of the seed layer). • Electroplating is performed on the exposed seed layer. • Remove the photoresist film and remove unwanted seed layers. The resulting patterned electroplated coating is the third wiring layer 26.

[0148] Through the above steps, a patterned third wiring layer 26 is formed. It should be noted that a portion of the third wiring layer 26 fills the through-holes in the third insulating layer 25.

[0149] Next, a fourth insulating layer 27 with through holes 27a is formed on the third wiring layer 26. Figure 4H The fourth insulating layer 27 covers the patterned third wiring layer 26. The fourth insulating layer 27 can be formed, for example, by coating a photosensitive resin composition containing photosensitive polyimide and drying it, and selectively exposing and developing the formed photosensitive polyimide film.

[0150] Through the above steps, wiring structure layer 2 is formed.

[0151] Next, an opening 1a is formed in the metal reinforcing layer 1 from the side opposite to the wiring structure layer 2. Figure 4I It should be noted that... Figure 4I and Figure 4H This is a relationship that has been flipped 180°.

[0152] The opening 1a can be formed, for example, as follows.

[0153] • A photoresist film (not shown) is formed on the surface of the metal reinforcement layer opposite to the wiring structure layer. • A photoresist pattern is formed by selectively exposing and developing the photoresist film (partially exposing the metal reinforcement layer). • Perform wet etching on the exposed metal reinforcement layer (e.g., wet etching using ferric chloride). • Removal of photoresist film Through the above steps, opening 1a is formed.

[0154] Through the above steps, we obtain Figure 1A and Figure 1B The wiring circuit board shown.

[0155] Another example of a wiring circuit board will be described.

[0156] Figure 5This is a cross-sectional schematic diagram of another example of a wiring circuit board.

[0157] Figure 5 The wiring circuit board 100 shown, except that the wiring structure layer 2 has a fourth wiring layer 28 and a fifth insulating layer 29, is designed to be compatible with... Figure 1A and Figure 1B The wiring circuit board shown has the same structure.

[0158] Figure 5 The wiring circuit board 100 shown has a metal reinforcement layer 1 and a wiring structure layer 2.

[0159] The wiring structure layer 2 has a fourth wiring layer 28 and a fifth insulating layer 29 within the opening 1a of the metal reinforcement layer 1.

[0160] The fourth wiring layer 28 is patterned. The fifth insulating layer 29 fills the gaps in the pattern of the fourth wiring layer 28 and covers the fourth wiring layer 28.

[0161] A portion of the fourth wiring layer 28 is in electrical contact with a portion of the wiring layer 22.

[0162] exist Figure 5 In the wiring circuit board 100 shown, the fifth insulating layer 29 does not contact the metal reinforcing layer 1.

[0163] The following methods can be cited as examples of methods for forming the fourth wiring layer 28 and the fifth insulating layer 29.

[0164] In manufacturing Figure 4I After the wiring circuit board shown, a fourth wiring layer 28 is formed in the opening 1a. The formation of the fourth wiring layer 28 can be performed, for example, by the following method.

[0165] • A seed layer (not shown) is formed on the insulating layer 21. • A photoresist film is formed on the seed layer (not shown). • A resist pattern is formed by selective exposure and development of the photoresist film (partial exposure of the seed layer). • Coating the exposed seed layer • Remove the photoresist film and remove unwanted seed layers. Through the above steps, a patterned fourth wiring layer 28 is formed.

[0166] Next, a fifth insulating layer 29 with through holes is formed on the fourth wiring layer 28. The formation of the fifth insulating layer 29 can be performed, for example, by coating a photosensitive resin composition containing photosensitive polyimide and drying it, and selectively exposing and developing the formed photosensitive polyimide film.

[0167] Another example of a wiring circuit board will be described.

[0168] Figure 6 This is a cross-sectional schematic diagram of another example of a wiring circuit board.

[0169] Figure 6 The wiring circuit board 100 shown, except that the wiring structure layer 2 has a fourth wiring layer 28 and a fifth insulating layer 29, is designed to be compatible with... Figure 1A and Figure 1B The wiring circuit board shown has the same structure.

[0170] Figure 6 The wiring circuit board 100 shown has a metal reinforcement layer 1 and a wiring structure layer 2.

[0171] The wiring structure layer 2 has a fourth wiring layer 28 and a fifth insulating layer 29 within the opening 1a of the metal reinforcement layer 1.

[0172] The fourth wiring layer 28 is patterned. The fifth insulating layer 29 fills the gaps in the pattern of the fourth wiring layer 28 and covers the fourth wiring layer 28.

[0173] A portion of the fourth wiring layer 28 is in electrical contact with a portion of the wiring layer 22.

[0174] exist Figure 6 In the wiring circuit board 100 shown, the fifth insulating layer 29 is connected to the metal reinforcing layer 1.

[0175] Another example of a wiring circuit board will be described.

[0176] Figure 7 This is a cross-sectional schematic diagram of another example of a wiring circuit board.

[0177] Figure 7 The wiring circuit board 100 shown, in addition to having thermal vias in the wiring structure layer 2, is designed to be compatible with... Figure 1A and Figure 1B The wiring circuit board shown has the same structure.

[0178] exist Figure 7 In the wiring circuit board 100 shown, a portion of wiring layer 22, a portion of second wiring layer 24, and a portion of third wiring layer 26 are connected to form a thermal via. The thermal via is connected to the metal reinforcement layer 1. For example, heat generated in the wiring structure layer 2 is conducted to the metal reinforcement layer 1 via the thermal via, thereby dissipating the heat generated in the wiring structure layer 2.

[0179] Another example of a wiring circuit board will be described.

[0180] Figure 8A and Figure 8BThis is a cross-sectional schematic diagram of another example of a wiring circuit board.

[0181] Figure 8A and Figure 8B The wiring circuit board 100 shown has a shape on the side of the opening 1a that is different from the other two. Figure 1A and Figure 1B Apart from the difference in the shape of the side of the opening 1a in the wiring circuit board shown, in order to be consistent with Figure 1A and Figure 1B The wiring circuit board shown has the same structure.

[0182] Figure 1A and Figure 1B The side of the opening 1a in the wiring circuit board shown is straight in cross-section, while Figure 8A and Figure 8B The shape of the side surface of the opening 1a in the wiring circuit board 100 shown is non-linear in cross-section. In such a case, the angle... α The method for finding is as follows.

[0183] In the cross-section of the metal reinforcing layer 1 in the thickness direction, including the opening 1a, If the line on the surface of the metal reinforcement layer 1 that is opposite to the wiring structure layer 2 is denoted as line A; The line on the surface of the wiring structure layer 2 corresponding to the metal reinforcement layer 1 is denoted as line B; The opening 1a has two side lines. The intersection of one of the side lines 1aa with line A is denoted as intersection point a, and the intersection of the other side line 1aa with line B is denoted as intersection point b. Let the line connecting intersection point a and intersection point b be denoted as line segment C; The line in line B that originates at intersection point b and is on the opposite side to the opening 1a is denoted as ray BH. The angle between ray BH and line segment C is then taken as the angle. α .

[0184] The following describes a structural example of the wiring layer.

[0185] Figure 9A This is a schematic diagram of one embodiment of a wiring circuit board.

[0186] Figure 9A The wiring circuit board 100 shown is with Figure 1A and Figure 1B The wiring circuit board shown has the same structure.

[0187] Figures 9B to 9E express Figure 9A Example of the structure of region X in the wiring circuit board 100 shown.

[0188] exist Figure 9B In the structural example of region X shown, the surface 22a of the wiring layer 22 opposite to the through-hole side of the insulating layer 21 is flat.

[0189] exist Figure 9C In the structural example of region X shown, the surface 22a of the wiring layer 22 opposite to the through-hole side of the insulating layer 21 has a corrugated shape.

[0190] exist Figure 9D In the structural example of region X shown, the surface 22a of the wiring layer 22 opposite to the through-hole side of the insulating layer 21 is concave.

[0191] exist Figure 9E In the structural example of region X shown, the surface 22a of the wiring layer 22 opposite to the through-hole side of the insulating layer 21 is convex.

[0192] These shapes can be adjusted, for example, by adjusting the formation conditions of the wiring layer 22 when forming the wiring layer 22 by filling the through holes of the insulating layer 21. In particular, when forming the wiring layer 22 by filling the through holes of the insulating layer 21, in the case of forming the wiring layer by plating, their shapes can be adjusted according to plating conditions such as plating composition, plating solution concentration, and plating layer growth rate.

[0193] It should be noted that sometimes the shape of the surface 22a of the wiring layer 22 is as follows: Figures 9C to 9E The non-flat shape shown is called a recess.

[0194] The following describes an embodiment of connecting a semiconductor chip to a wiring circuit board.

[0195] Figure 10 This is a cross-sectional schematic diagram of an embodiment in which the semiconductor chip 200 is connected to the wiring circuit board 100.

[0196] Wiring circuit board 100 is Figure 1A and Figure 1B The wiring circuit board shown.

[0197] The semiconductor chip 200 has a semiconductor chip body 201 and solder balls 202.

[0198] A semiconductor chip 200 is placed in the opening 1a of the metal reinforcement layer 1 of the wiring circuit board 100, and a portion of the wiring layer 22 that fills the through hole of the insulating layer 21 is electrically connected to the solder ball 202.

[0199] The opening shape of the opening 1a of the wiring circuit board 100 is as follows: αIf the angle is less than 90°, there are no special restrictions as long as the semiconductor chip body 201 does not come into contact with the metal part of the metal reinforcement layer 1.

[0200] For example, after placing the wiring circuit board 100, to which the semiconductor chip 200 is attached, on a larger substrate, a sealing resin composition is used to seal both the semiconductor chip and the wiring circuit board in order to protect them. During this sealing process, the corners are... α At an angle less than 90°, the sealing resin composition can penetrate the gap between the edge of the opening 1a of the metal reinforcing layer 1 and the semiconductor chip, and after sealing, it can suppress residual voids inside the opening 1a of the metal reinforcing layer 1.

[0201] (Semiconductor package) The semiconductor package of the present invention includes the wiring circuit substrate of the present invention.

[0202] Semiconductor packages, for example, contain semiconductor chips that are connected to a wiring circuit board.

[0203] Semiconductor packages include, for example, a sealing resin that seals a semiconductor chip.

[0204] Examples of semiconductor packages include: FC-CSP (Flip Chip-Chip Scale Package), MIS-BGA (Molded Interconnect Substrate-Ball Grid Array) package, ETS-BGA (Embedded Trace Substrate-Ball Grid Array) package, Fan-out type WLP (Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), Fan-in type PLP, FC-BGA type (Flip Chip-Ball Grid Array), and high-end 2.5D and 3D packages.

[0205] (Electronic devices) The electronic device of the present invention includes the semiconductor package of the present invention.

[0206] As electronic devices, there are no particular limitations. Examples include ICT infrastructure equipment such as servers, routers, supercomputers, mainframes, and workstations; antennas such as GPS antennas, wireless base station antennas, millimeter-wave antennas, and RFID antennas; communication equipment such as mobile phones, smartphones, PHS, PDAs, and tablet terminals; digital devices such as personal computers, televisions, digital cameras, digital camcorders, POS terminals, wearable terminals, and digital media players; vehicle-mounted electronic equipment such as electronic control systems, vehicle-mounted communication equipment, car navigation equipment, millimeter-wave radar, and vehicle-mounted camera modules; semiconductor testing equipment and high-frequency measuring devices; etc.

Claims

1. A wiring circuit board, characterized in that, It comprises: a wiring structure layer having an insulating layer and a wiring layer; and a metal reinforcement layer in contact with one surface of the wiring structure layer. The surface of the metal reinforcement layer opposite to the wiring structure layer is exposed. The metal reinforcement layer has an opening for connecting a semiconductor chip to the wiring circuit substrate, the opening penetrating the metal reinforcement layer in the thickness direction. In the cross-section of the metal reinforcing layer in the thickness direction, including the opening, If the line on the surface of the metal reinforcing layer opposite to the wiring structure layer is denoted as line A; The line on the surface corresponding to the wiring structure layer of the metal reinforcement layer is denoted as line B; The opening has two side lines. The intersection of one of the two side lines with line A is denoted as intersection point a, and the intersection of the side line with line B is denoted as intersection point b. The line connecting the intersection point a and the intersection point b is denoted as line segment C; The line in line B that originates from the intersection point b and runs on the opposite side to the opening is denoted as ray BH. The angle between ray BH and line segment C is... α Less than 90°.

2. The wiring circuit board according to claim 1, wherein, The angle α It is between 45° and 90°.

3. The wiring circuit board according to claim 1, wherein, In addition to the opening, the metal reinforcing layer also has a second opening that extends through the metal reinforcing layer in the thickness direction.

4. The wiring circuit board according to claim 1, wherein, In addition to the aforementioned opening, the metal reinforcing layer also has a second opening and a third opening that penetrate the metal reinforcing layer in the thickness direction. In any cross section X along the thickness direction of the metal reinforcing layer, the second opening and the third opening are formed in a manner that sandwiches the opening.

5. The wiring circuit board according to claim 4, wherein, In the section Y of the metal reinforcing layer in the thickness direction, which is orthogonal to the section X, the metal reinforcing layer does not have an opening that penetrates the metal reinforcing layer in the thickness direction.

6. The wiring circuit board according to claim 4, wherein, The metal reinforcing layer further has a fourth opening that penetrates the metal reinforcing layer along its thickness direction. The fourth opening is formed such that the metal reinforcing layer has a cross section Y, which is orthogonal to the cross section X, in the thickness direction and includes the fourth opening.

7. The wiring circuit board according to claim 1, wherein, The wiring structure layer has an insulating layer other than the insulating layer and a wiring layer other than the wiring layer within the opening of the metal reinforcing layer.

8. The wiring circuit board according to claim 1, wherein, The wiring structure layer does not have an insulating layer other than the insulating layer and a wiring layer other than the wiring layer within the opening of the metal reinforcement layer.

9. A semiconductor package, characterized in that, The wiring circuit board comprising any one of claims 1 to 8.

10. An electronic device, characterized in that, It includes the semiconductor package as described in claim 9.

11. A method for manufacturing a wiring circuit board, characterized in that, A method for manufacturing a wiring circuit board according to any one of claims 1 to 8, the method comprising: The process of forming the opening that extends through the thickness direction of the metal reinforcing layer in the metal reinforcing layer. The process of forming the opening includes: making the angle α The opening is formed at an angle of less than 90°.

12. The method for manufacturing a wiring circuit board according to claim 11, wherein, The process of forming the opening includes: wet etching to make the corner α The opening is formed at an angle of less than 90°.

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