Thin film, method for manufacturing the same, optoelectronic device, display device

Abstract

This application provides a thin film, its preparation method, an optoelectronic device, and a display device. The thin film includes a first sublayer and a first interface layer stacked together. The material of the first interface layer includes a first polymer, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C. The thin film provided in this application provides a first interface layer disposed on one side of the first sublayer. Because the material of the first interface layer includes the first polymer, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C, when the optoelectronic device containing this thin film generates heat during operation, the first interface layer softens and becomes fluid. The fluidized first interface layer automatically repairs the pores and / or cracks on the first sublayer, thereby improving the performance of the first sublayer.

Description

Technical Field

[0001] This application relates to the field of optoelectronic devices, and in particular to a thin film and its preparation method, an optoelectronic device, and a display device. Background Technology

[0002] Existing thin films may have defects such as pores or cracks after preparation, or they may age and deform during use, resulting in defects such as pores or cracks. Therefore, the performance of thin films needs to be improved. Summary of the Invention

[0003] Based on this, embodiments of this application provide a thin film and its preparation method, an optoelectronic device, and a display device.

[0004] In a first aspect, embodiments of this application provide a thin film comprising a first sublayer and a first interface layer stacked together, wherein the material of the first interface layer comprises a first polymer, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C.

[0005] Secondly, embodiments of this application provide a method for preparing a thin film, comprising:

[0006] A first sublayer is provided, and a first remediation solution is deposited on the first sublayer to obtain a first interface layer; or,

[0007] A first remediation solution is deposited to obtain a first interface layer, and a first sublayer is formed on the first interface layer to obtain a thin film, wherein the thin film comprises a first interface layer and a first sublayer stacked together.

[0008] The first repair solution comprises a first polymer and a first solvent, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C.

[0009] Thirdly, embodiments of this application provide an optoelectronic device, including a cathode and an anode disposed opposite to each other and an active layer disposed between the cathode and the anode, wherein the active layer comprises a thin film as described above or a thin film prepared by the method described above.

[0010] Fourthly, embodiments of this application provide a display device including the optoelectronic device described above.

[0011] The thin film provided in this application embodiment has good uniformity. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below.

[0013] Figure 1This is a schematic diagram of a first structure of the thin film provided in an embodiment of this application.

[0014] Figure 2 This is a schematic diagram of a second structure of the thin film provided in an embodiment of this application.

[0015] Figure 3 This is a schematic diagram of the structure of the optoelectronic device provided in the embodiments of this application.

[0016] Component symbol explanation:

[0017] 100. Optoelectronic device; 20. Anode; 30. Hole injection layer; 40. Hole transport layer; 50. Thin film; 51. First sublayer; 52. First interface layer; 53. Second interface layer; 60. Electron transport layer; 70. Cathode. Detailed Implementation

[0018] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0019] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0020] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, a+b, a+c, b+c, or a+b+c, where a, b, and c can be single or multiple.

[0021] In this application, another layer is formed "on" a certain layer. The term "on" is a broad concept and can mean that the formed other layer is adjacent to a certain layer, or that there are other spacer structures between the other layer and the certain layer. For example, a second electrode is formed "on" the first charge carrier functional layer. The term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0022] "Parts by weight" is a basic unit of measurement used to express the mass ratio of multiple components. One part can represent any unit mass, such as 1g, 1kg, 2g, 2kg, etc. If we say that component A has "a" parts by weight and component B has "b" parts by weight, it means the mass ratio of component A to component B is a:b. Alternatively, it can mean that the mass of component A is aK and the mass of component B is bK (K is any number representing a multiplier). It is important to understand that, unlike parts by weight, the sum of the parts by weight of all components is not limited to 100 parts.

[0023] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0024] Electroluminescent devices include OLED (Organic Light-Emitting Diode) and QLED (Quantum Dot Light-Emitting Diodes). QLED has advantages such as high color saturation, wet fabrication capability, and high stability, which has led to increasing attention on QLED research. OLED, with its excellent self-emissive properties, high contrast, fast response, and flexible display capabilities, has wide applications in display, lighting, and smart wearable devices.

[0025] During the power-on lighting process of an electroluminescent device, heat is inevitably generated. This heat can cause the light-emitting layer material in the device to age and deform to a certain extent, reducing the luminous efficiency of the light-emitting layer, thereby reducing the luminous efficiency of the light-emitting device and shortening its service life.

[0026] Please see Figure 1 This application provides a thin film 50, which includes a first sub-layer 51 and a first interface layer 52 stacked together. The material of the first interface layer 52 includes a first polymer, and the glass transition temperature of the material of the first interface layer 52 is 60°C to 100°C.

[0027] For example, the glass transition temperature can be determined using a thermomechanical analyzer (TMA).

[0028] For example, the first polymer includes at least one of polyoxymethylene, polyvinyl alcohol, polyetheretherketone, polylactic acid, polyurethane, polyethylene, and polystyrene.

[0029] For example, the glass transition temperature of the material of the first interface layer 52 is 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, etc.

[0030] The thin film 50 provided in this application embodiment has a first interface layer 52 disposed on one side of the first sub-layer 51. Since the material of the first interface layer 52 includes a first polymer and the glass transition temperature of the material of the first interface layer 52 is 60°C to 100°C, when the optoelectronic device 100 containing the thin film 50 generates heat during operation, the first interface layer 52 will soften and become fluid. The fluidized first interface layer 52 will automatically repair the holes and / or cracks on the first sub-layer 51, thereby improving the performance of the first sub-layer 51.

[0031] For example, the thin film 50 can be used as a light-emitting layer in optoelectronic devices. When the optoelectronic device 100 containing the thin film 50 generates heat during operation, the first interface layer 52 softens and becomes fluid. The fluidized first interface layer 52 automatically repairs the holes and / or cracks generated in the light-emitting layer during aging, thereby improving the light-emitting performance of the light-emitting layer, thereby improving the light-emitting efficiency of the optoelectronic device and extending its service life.

[0032] In some embodiments, the material of the first interface layer 52 further includes a first plasticizer, wherein the mass ratio of the first plasticizer to the first polymer is (1-5):100, for example 1:100, 2:100, 3:100, 4:100, 5:100, etc.

[0033] For example, the first plasticizer includes at least one of dioctyl terephthalate, dioctyl phthalate, and dioctyl isophthalate.

[0034] It should be noted that by adding a first plasticizer to the first interface layer 52, the glass transition temperature of the material of the first interface layer 52 can be controlled. When the optoelectronic device 100 generates heat during operation, the first interface layer 52 can have good fluidity, thereby repairing the holes and / or cracks on the first sub-layer 51.

[0035] It is understandable that since the glass transition temperature of polyoxymethylene and polyvinyl alcohol can be controlled within the range of 60℃ to 100℃, when the first polymer in the first interface layer 52 is polyoxymethylene and / or polyvinyl alcohol, the first plasticizer may not be added to the first interface layer 52.

[0036] For example, the material of the first interface layer 52 further includes a first conductive polymer material, the conductivity of which is 1000 S / cm to 5000 S / cm, wherein the mass ratio of the first conductive polymer material to the first polymer is (10 to 20):100, such as 10:100, 12:100, 15:100, 18:100, 20:100, etc.

[0037] For example, the first conductive polymer material includes at least one of polyaniline, polypyrrole, poly(thiophene-ethylenedioxythiophene), poly(p-xylene), and poly(thiophene-vinylene).

[0038] It should be noted that by adding a first conductive polymer material to the first interface layer 52, the conductivity of the first interface layer 52 can be improved, thereby improving the overall carrier transport function of the thin film 50 and thus enhancing the electrical performance of the optoelectronic device 100.

[0039] For example, the thickness of the first interface layer 52 is 5nm to 15nm, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, etc.

[0040] For example, the thickness of the first sublayer 51 is 10nm-50nm, such as 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc.

[0041] Please see Figure 2 The thin film 50 further includes a second interface layer 53, which is disposed on the side of the first sub-layer 51 away from the first interface layer 52. The material of the second interface layer 53 includes a second polymer, and the glass transition temperature of the material of the second interface layer 53 is 60℃~100℃, such as 60℃, 65℃, 70℃, 75℃, 80℃, 85℃, 90℃, 95℃, 100℃, etc.

[0042] It should be noted that by providing a second interface layer 53 on the side of the first sub-layer 51 away from the first interface layer 52, when the optoelectronic device 100 containing the thin film 50 generates heat during operation, both the first interface layer 52 and the second interface layer 53 on both sides of the first sub-layer 51 will soften and become fluid. The fluidized first interface layer 52 and the second interface layer 53 can repair the pores and / or cracks generated in the first sub-layer 51 during aging from both sides. Compared with the scheme of providing the first interface layer 52 only on one side of the first sub-layer 51, it can further improve the light-emitting performance of the first sub-layer 51, thereby further improving the light-emitting efficiency of the optoelectronic device 100 and extending its service life.

[0043] In some embodiments, the material of the second interface layer 53 further includes a second plasticizer, wherein the mass ratio of the second plasticizer to the second polymer is (1-5):100, for example 1:100, 2:100, 3:100, 4:100, 5:100, etc.

[0044] For example, the second plasticizer includes at least one of dioctyl terephthalate, dioctyl phthalate, and dioctyl isophthalate.

[0045] For example, the material of the second interface layer 53 further includes a second conductive polymer material, the conductivity of which is 1000 S / cm to 5000 S / cm, wherein the mass ratio of the second conductive polymer material to the second polymer is (10 to 20):100, such as 10:100, 12:100, 15:100, 18:100, 20:100, etc.

[0046] For example, the second conductive polymer material includes at least one of polyaniline, polypyrrole, poly(thiophene-ethylenedioxythiophene), poly(p-xylene), and poly(thiophene-vinylene).

[0047] For example, the thickness of the second interface layer 53 is 5nm to 15nm, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, etc.

[0048] In some embodiments, the material of the second interface layer 53 is the same as the material of the first interface layer 52.

[0049] For example, the material of the first sublayer 51 includes one or more of organic light-emitting materials and quantum dot light-emitting materials. The organic light-emitting materials include one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.The quantum dot luminescent material comprises one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, and ZnO. One or more of the following compounds: STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, and PbSeS. PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and GaAlN. One or more of As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; wherein the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors, wherein the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0050] Please combine Figure 1 or Figure 2 This application also provides a method for preparing a thin film, comprising:

[0051] A first sublayer 51 is provided, and a first repair solution is deposited on the first sublayer 51 to obtain a first interface layer 52; or,

[0052] A first repair solution is deposited to obtain a first interface layer 52, and a first sublayer 51 is formed on the first interface layer 52 to obtain a thin film 50, wherein the thin film 50 includes the first interface layer 52 and the first sublayer 51 stacked together.

[0053] The first repair solution includes a first polymer and a first solvent, and the glass transition temperature of the material of the first interface layer 52 is 60℃~100℃, such as 60℃, 70℃, 80℃, 90℃, 100℃, etc.

[0054] For example, the step of depositing the first repair solution to obtain the first interface layer 52 specifically includes: depositing the first repair solution to obtain a first wet film layer, and annealing the first wet film layer at a temperature of 80℃ to 120℃ (e.g., 80℃, 90℃, 100℃, 110℃, 120℃, etc.) and for a time of 2 minutes to 8 minutes (e.g., 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, etc.).

[0055] For example, the first solvent includes at least one of chlorobenzene, chloroform, toluene, and xylene.

[0056] For example, the concentration of the first polymer in the first repair solution is

[0057] 10mg / ml-20mg / ml, for example 10mg / ml, 12mg / ml, 15mg / ml, 18mg / ml, 20mg / ml.

[0058] For example, the first repair solution further includes a first plasticizer, wherein the mass ratio of the first plasticizer to the first polymer is (1-5):100.

[0059] For example, the first repair solution further includes a first conductive polymer material, wherein the mass ratio of the first conductive polymer material to the first polymer is (10-20):100.

[0060] Exemplarily, before depositing the first repair solution on the first sublayer 51, the method for preparing the thin film further includes:

[0061] A second repair solution is deposited to obtain a second interface layer 53, and then a first sublayer 51 is formed on the second interface layer 53; at this time, the thin film 50 obtained includes a second interface layer 53, a first sublayer 51 and a first interface layer 52 stacked in sequence.

[0062] Exemplarily, after forming the first sublayer 51 on the first interface layer 52, the method for preparing the thin film further includes:

[0063] A second repair solution is deposited on the first sublayer 51 to obtain a second interface layer 53; at this time, the thin film 50 obtained includes a first interface layer 52, a first sublayer 51 and a second interface layer 53 stacked in sequence.

[0064] For example, the second repair solution includes a second polymer and a second solvent, and the glass transition temperature of the material of the second interface layer 53 is 60°C to 100°C, such as 60°C, 70°C, 80°C, 90°C, 100°C, etc.

[0065] For example, the second solvent includes at least one of chlorobenzene, chloroform, toluene, and xylene.

[0066] For example, the deposition of the second repair solution to obtain the second interface layer 53 includes: depositing the second repair solution to obtain a second wet film layer, and annealing the second wet film layer at a temperature of 80°C to 120°C (e.g., 80°C, 90°C, 100°C, 110°C, 120°C, etc.) and for a time of 2 minutes to 8 minutes (e.g., 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, etc.).

[0067] For example, the concentration of the second polymer in the second repair solution is 10 mg / ml to 20 mg / ml, such as 10 mg / ml, 12 mg / ml, 15 mg / ml, 18 mg / ml, or 20 mg / ml.

[0068] For example, the second repair solution further includes a second plasticizer, wherein the mass ratio of the second plasticizer to the second polymer is (1-5):100.

[0069] For example, the second repair solution further includes a second conductive polymer material with a conductivity of 1000 S / cm to 5000 S / cm, wherein the mass ratio of the second conductive polymer material to the second polymer is (10 to 20): 100.

[0070] Please see Figure 3 This application also provides an optoelectronic device 100, including a cathode 70 and an anode 20 disposed opposite to each other, and an active layer disposed between the cathode 70 and the anode 20. The active layer is the thin film 50 in any of the above embodiments or the thin film 50 prepared by the thin film preparation method in any of the above embodiments.

[0071] For example, when the thin film 50 consists only of a first interface layer 52 and a first sub-layer 51, the first interface layer 52 may be disposed between the anode 20 and the first sub-layer 51, or between the cathode 70 and the first sub-layer 51.

[0072] For example, when the thin film 50 includes a first interface layer 52, a first sub-layer 51 and a second interface layer 53, one of the first interface layer 52 and the second interface layer 53 is disposed between the anode 20 and the first sub-layer 51, and the other is disposed between the cathode 70 and the first sub-layer 51.

[0073] Please see Figure 3The optoelectronic device 100 further includes a hole functional layer located between the anode 20 and the thin film 50. The hole functional layer includes a hole transport layer 40 and / or a hole injection layer 30. For example, the hole transport layer 40 is located between the hole injection layer 30 and the thin film 50.

[0074] Optionally, the material of the hole transport layer 40 includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)- Spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiron NPB, Poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4 '-Bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, or one or more of these.

[0075] Optionally, the material of the hole injection layer 30 includes one or more of the following: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0076] Please see Figure 3 The optoelectronic device 100 further includes an electron transport layer 60, which is located between the cathode 70 and the thin film 50.

[0077] Optionally, the material of the electron transport layer 60 includes at least one of fullerene, fullerene derivative, fullerene, metal oxide, and doped metal oxide. The fullerene derivative includes methyl [6,6]-phenyl-C61-butyrate. The metal oxide is selected from at least one of ZnO, BaO, TiO2, and SnO2. The metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, and SnO2, and the doping element is selected from at least one of Al, Mg, Li, In, and Ga.

[0078] Optionally, the anode 20 and cathode 70 each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

[0079] For example, the thickness of the hole injection layer 30 is 10nm-120nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, etc.

[0080] For example, the thickness of the hole transport layer 40 is 10nm-60nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, etc.

[0081] For example, the thickness of the electron transport layer 60 is 10nm-60nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, etc.

[0082] For example, the thickness of the anode 20 is 10nm-100nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0083] For example, the thickness of the cathode 70 is 10nm-100nm, such as 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0084] This application also provides a display device, including the optoelectronic device 100 in any of the above embodiments.

[0085] For example, the display device can be a terminal such as a television, mobile phone, tablet computer, monitor, or advertising display screen, or it can be a device with a display screen such as a gaming device, augmented reality (AR) device, virtual reality (VR) device, data storage device, audio playback device, video playback device, or wearable device. Wearable devices can be smart bracelets, smart glasses, smartwatches, smart decorations, etc.

[0086] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0087] Thin Film Example 1

[0088] A thin film, the preparation method of which includes:

[0089] Step 11: Spin-coat quantum dot solution, which includes quantum dots CdZnSe and n-octane (solvent), with a concentration of 30 mg / ml. Heat at 80°C for 5 minutes to obtain the first sublayer, which has a thickness of 10 nm.

[0090] Step 12: Spin-coat the first repair solution onto the first sublayer. The first repair solution includes polyoxymethylene (first polymer) and chlorobenzene (first solvent). The concentration of polyoxymethylene in the first repair solution is 15 mg / ml. Heat at 100°C for 5 minutes to obtain the first interface layer (10 nm). A thin film is then prepared. The thin film includes the first sublayer and the first interface layer stacked together. The glass transition temperature of the material of the first interface layer is 100°C.

[0091] Thin Film Example 2

[0092] A thin film, which differs from the thin film of Example 1 in that:

[0093] In step 12, a first repair solution is spin-coated onto the first sublayer. The first repair solution includes polyetheretherketone (first polymer), dioctyl terephthalate (first plasticizer), and chlorobenzene (first solvent). The concentration of polyetheretherketone in the first repair solution is 15 mg / ml, and the mass ratio of dioctyl terephthalate (first plasticizer) to polyetheretherketone (first polymer) is 3:100. The solution is heated at 100°C for 5 minutes to obtain a first interface layer (10 nm). A thin film is then formed. The thin film includes a first sublayer and a first interface layer stacked together. The glass transition temperature of the material of the first interface layer is 70°C.

[0094] Thin Film Example 3

[0095] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0096] In step 12, the first polymer in the first repair solution is polylactic acid, the concentration of polylactic acid in the first repair solution is 15 mg / ml, the first plasticizer is dioctyl phthalate, and the mass ratio of dioctyl phthalate (first plasticizer) to polylactic acid (first polymer) is 1:100. In this Example 3, the glass transition temperature of the material of the first interface layer is 80°C.

[0097] Thin Film Example 4

[0098] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0099] In step 12, the first polymer in the first repair solution is polyurethane, the concentration of polyurethane in the first repair solution is 15 mg / ml, the first plasticizer is dioctyl isophthalate, and the mass ratio of dioctyl isophthalate (first plasticizer) to polyurethane (first polymer) is 5:100. In this example 4, the glass transition temperature of the material of the first interface layer is 60°C.

[0100] Thin Film Example 5

[0101] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0102] In step 12, the first repair solution also includes polyaniline (first conductive polymer material), and the mass ratio of polyaniline (first conductive polymer material) to polyetheretherketone (first polymer) is 15:100. In this example 5, the glass transition temperature of the material of the first interface layer is 70°C.

[0103] Thin Film Example 6

[0104] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0105] In step 12, the first repair solution also includes polypyrrole (first conductive polymer material), and the mass ratio of polypyrrole (first conductive polymer material) to polyetheretherketone (first polymer) is 10:100. In this example 6, the glass transition temperature of the material of the first interface layer is 80°C.

[0106] Thin Film Example 7

[0107] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0108] In step 12, the first repair solution also includes poly(thiophene-ethylenedioxythiophene) (first conductive polymer material), and the mass ratio of poly(thiophene-ethylenedioxythiophene) (first conductive polymer material) to polyether ether ketone (first polymer) is 20:100. In this Example 6, the glass transition temperature of the material of the first interface layer is 60°C.

[0109] Thin Film Example 8

[0110] A thin film, the preparation method of which differs from that of Thin Film Example 2, in that:

[0111] Before step 11, there is a step 10, which includes: spin-coating a second repair solution, the second repair solution including polyetheretherketone (first polymer), dioctyl terephthalate (first plasticizer) and chlorobenzene (first solvent), the concentration of polyetheretherketone in the first repair solution is 15 mg / ml, the mass ratio of dioctyl terephthalate (first plasticizer) to polyetheretherketone (first polymer) is 3:100, heating at 100°C for 5 minutes to obtain a second interface layer (10 nm);

[0112] In step 11, a quantum dot solution is spin-coated onto the second interface layer;

[0113] In step 12, the thin film obtained includes a second interface layer, a first sublayer, and a first interface layer stacked sequentially, wherein the glass transition temperature of the materials of the first interface layer and the second interface layer is 60°C.

[0114] Thin Film Comparative Example 1

[0115] A thin film, the preparation method of which includes:

[0116] Step 11: Spin-coat quantum dot solution, which includes quantum dots CdZnSe and n-octane (solvent), with a concentration of 30 mg / ml. Heat at 80°C for 5 minutes to obtain a thin film with a thickness of 10 nm.

[0117] Device Example 1

[0118] A photoelectric device, the method for fabricating which includes:

[0119] Step S1: Spin-coat PEDOT:PSS onto the anode (ITO, 80nm), heat at 150℃ for 15 minutes to obtain a hole injection layer with a thickness of 25nm.

[0120] Step S2: Spin-coat TFB onto the hole injection layer and heat at 200°C for 30 minutes to obtain a hole transport layer with a thickness of 25nm.

[0121] Step S3: Form a thin film on the hole transport layer using the method of Thin Film Example 1;

[0122] Step S4: Spin-coat ZMO nanoparticles onto the thin film and heat at 80°C for 30 minutes to obtain an electron transport layer with a thickness of 30 nm.

[0123] Step S5: Deposit Ag on the electron transport layer to obtain a cathode with a thickness of 100 nm, thus obtaining an optoelectronic device.

[0124] Device Example 2

[0125] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 2.

[0126] Device Example 3

[0127] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 3.

[0128] Device Example 4

[0129] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 4.

[0130] Device Example 5

[0131] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 5.

[0132] Device Example 6

[0133] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 6.

[0134] Device Example 7

[0135] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 7.

[0136] Device Example 8

[0137] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that: in step S3, a thin film is formed on the hole transport layer according to the method of thin film embodiment 8.

[0138] Device Comparison Example 1

[0139] This embodiment provides an optoelectronic device, the preparation method of which differs from that of device embodiment 1 in that:

[0140] In step S3, a thin film is formed on the hole transport layer according to the method of thin film comparative example 1.

[0141] Thin film performance testing:

[0142] The properties of the films prepared in Thin Film Examples 1-8 and Thin Film Comparative Example 1 were tested using the following methods:

[0143] Test method: The number of holes and cracks in 1 square millimeter at the center of the film was measured by microscopic observation.

[0144] The thin film performance test results are shown in Table 1:

[0145] Table 1

[0146] serial number Quantity (pieces) Thin Film Example 1 7 Thin Film Example 2 5 Thin Film Example 3 9 Thin Film Example 4 10 Thin Film Example 5 4 Thin Film Example 6 8 Thin Film Example 7 9 Thin Film Example 8 3 Thin Film Comparative Example 1 28

[0147] As can be seen from Table 1, the number of pores and cracks in the films prepared in Thin Film Examples 1-8 is less than that in the thin film prepared in Comparative Example 1. It is known that the difference between Thin Film Examples 1-8 and Comparative Example 1 is that the films in Thin Film Examples 1-8 all include a first sublayer and an interface layer (a first interface layer and / or a second interface layer), while the film in Comparative Example 1 is composed of a first sublayer. This shows that by setting an interface layer on the surface of the first sublayer, the number of pores and cracks on the film can be reduced, and the flatness of the film can be improved.

[0148] Device performance testing:

[0149] The devices prepared in Device Examples 1-8 and Device Comparative Example 1 were subjected to performance testing, and the testing methods are as follows:

[0150] Current efficiency (CE) and luminance (L) testing: Using the FSD optical characteristic measurement equipment, an efficiency testing system was built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW. Parameters such as voltage, current, luminance, and emission spectrum were measured, and the current efficiency was calculated.

[0151] Device lifetime testing: Under constant current (2mA) drive, the electroluminescence lifetime of each optoelectronic device was analyzed using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from maximum brightness to 95% was recorded. The time (T95@1000nit,h) required for the brightness of each optoelectronic device to decay from 100% to 95% at 1000nit brightness was calculated using the decay fitting formula.

[0152] The device performance test results are shown in Table 2:

[0153] Table 2

[0154] serial number T95(h) T95@1000nit(h) <![CDATA[L max (nit)]]> <![CDATA[C.E max (cd / A)]]> Device Example 1 21.5 247 4285 32.3 Device Example 2 21.8 250 4379 32.7 Device Example 3 23.5 270 4721 35.2 Device Example 4 24.9 286 5002 37.3 Device Example 5 29.7 341 5966 44.5 Device Example 6 30.8 354 6187 46.2 Device Example 7 30.8 354 6187 46.2 Device Example 8 40 460 8036 60 Device Comparison Example 1 11.5 132 2310 17.2

[0155] As can be seen from Table 2:

[0156] The maximum brightness (L) of the devices prepared in Examples 1-8 max ), maximum current efficiency (CE) max Both the lifetime (T95@1000nit) and the maximum brightness (L) of the device fabricated in Comparative Example 1 are greater than those of the device fabricated in Comparative Example 1. max ), maximum current efficiency (CE) maxThe known differences between Device Examples 1-8 and Device Comparative Example 1 are as follows: the thin films in Device Examples 1-8 all include a first sublayer and an interface layer (a first interface layer and / or a second interface layer), while the thin film in Device Comparative Example 1 is composed of a first sublayer. This shows that by setting an interface layer (a first interface layer and / or a second interface layer) on the surface of the first sublayer, the luminous efficiency, luminous brightness and lifespan of the thin film can be improved, thereby improving the luminous efficiency, luminous brightness and lifespan of the optoelectronic device.

[0157] The maximum brightness (L) of the devices prepared in Examples 5-7 max ), maximum current efficiency (CE) max Both the lifetime (T95@1000nit) and the maximum brightness (L) of the devices prepared in Examples 2-4 are greater than those of the devices prepared in Examples 2-4. max ), maximum current efficiency (CE) max The known differences between device embodiments 5-7 and device embodiments 2-4 are as follows: the first interface layer of the thin film in device embodiments 5-7 is all equipped with a first conductive polymer material, while the first interface layer of the thin film in device embodiments 2-4 is not equipped with a first conductive polymer material. This shows that by adding a first conductive polymer material to the first interface layer, the electrical performance of the thin film can be improved, thereby improving the luminous efficiency, luminous brightness and lifespan of the thin film, and thus improving the luminous efficiency, luminous brightness and lifespan of the optoelectronic device.

[0158] The maximum brightness (L) of the device fabricated in Example 8 max ), maximum current efficiency (CE) max The lifetime T95@1000nit is greater than the maximum brightness (L) of the device prepared in Device Example 2. max ), maximum current efficiency (CE) max The known differences between Device Example 8 and Device Example 2 are as follows: the thin film in Device Example 2 consists of a first sub-layer and a first interface layer stacked together, while the thin film in Device Example 8 consists of a second interface layer, a first sub-layer, and a first interface layer stacked together. This indicates that by setting interface layers on both sides of the first sub-layer, compared with setting an interface layer on only one side of the first sub-layer, the luminous efficiency, luminous brightness, and lifespan of the thin film can be further improved, thereby further improving the luminous efficiency, luminous brightness, and lifespan of the optoelectronic device.

[0159] The thin films, their preparation methods, optoelectronic devices, and display devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application, and the descriptions of the embodiments above are only for the purpose of helping to understand this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A thin film, characterized in that, It includes a first sublayer and a first interface layer stacked together. The material of the first interface layer includes a first polymer, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C.

2. The thin film according to claim 1, characterized in that, The first polymer includes at least one selected from polyoxymethylene, polyvinyl alcohol, polyetheretherketone, polylactic acid, polyurethane, polyethylene, and polystyrene; and / or, The material of the first interface layer further includes a first plasticizer, wherein the mass ratio of the first plasticizer to the first polymer is (1-5):100; and / or, The material of the first interface layer further includes a first conductive polymer material, the first conductive polymer material having a conductivity of 1000 S / cm to 5000 S / cm, wherein the mass ratio of the first conductive polymer material to the first polymer is (10-20):100; and / or, The thickness of the first interface layer is 5 nm to 15 nm; and / or, The thickness of the first sublayer is 10nm-50nm; and / or, The film further includes a second interface layer disposed on the side of the first sublayer opposite to the first interface layer. The material of the second interface layer includes a second polymer, and the glass transition temperature of the material of the second interface layer is 60°C to 100°C.

3. The thin film according to claim 2, characterized in that, The first plasticizer includes at least one of dioctyl terephthalate, dioctyl phthalate, and dioctyl isophthalate; and / or, The first conductive polymer material includes at least one selected from polyaniline, polypyrrole, poly(thiophene-ethylenedioxythiophene), poly(p-xylene), and poly(thiophene-vinylene); and / or, The material of the second interface layer further includes a second plasticizer, wherein the mass ratio of the second plasticizer to the second polymer is (1-5):100; and / or, The material of the second interface layer further includes a second conductive polymer material, the conductivity of which is 1000 S / cm to 5000 S / cm, wherein the mass ratio of the second conductive polymer material to the second polymer is (10-20):100; and / or, The thickness of the second interface layer is 5nm to 15nm.

4. The thin film according to any one of claims 1-3, characterized in that, The material of the first sublayer includes one or more of organic light-emitting materials and quantum dot light-emitting materials. The organic light-emitting materials include one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.The quantum dot luminescent material comprises one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, and ZnO. One or more of the following compounds: STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, and PbSeS. PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and GaAlN. One or more of As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; wherein the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors, wherein the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2 + Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

5. A method for preparing a thin film, characterized in that, include: A first sublayer is provided, and a first repair solution is deposited on the first sublayer to obtain a first interface layer; or, A first remediation solution is deposited to obtain a first interface layer, and a first sublayer is formed on the first interface layer to obtain a thin film, wherein the thin film comprises a first interface layer and a first sublayer stacked together. The first repair solution comprises a first polymer and a first solvent, and the glass transition temperature of the material of the first interface layer is 60°C to 100°C.

6. The method for preparing a thin film according to claim 5, characterized in that, The step of depositing the first repair solution to obtain the first interface layer specifically includes: depositing the first repair solution to obtain the first wet film layer, and annealing the first wet film layer; Wherein, the annealing temperature is 80℃~120℃, and the annealing time is 2 minutes~8 minutes; and / or, The first solvent includes at least one of chlorobenzene, chloroform, toluene, and xylene; and / or, The concentration of the first polymer in the first remediation solution is 10 mg / ml-20 mg / ml; and / or, The first repair solution further includes a first plasticizer, wherein the mass ratio of the first plasticizer to the first polymer is (1-5):100; and / or, The first repair solution further includes a first conductive polymer material, the conductivity of which is 1000 S / cm to 5000 S / cm, wherein the mass ratio of the first conductive polymer material to the first polymer is (10 to 20):

100.

7. The method for preparing a thin film according to claim 5, characterized in that, Before depositing the first remediation solution on the first sublayer, the method for preparing the thin film further includes: A second remediation solution is deposited to obtain a second interface layer, and then a first sublayer is formed on the second interface layer; at this time, the resulting thin film comprises a second interface layer, a first sublayer, and a first interface layer stacked sequentially; or, After forming a first sublayer on the first interface layer, the method for preparing the thin film further includes: A second remediation solution is deposited on the first sublayer to obtain a second interface layer; at this point, the resulting film comprises a first interface layer, a first sublayer, and a second interface layer sequentially stacked; and / or, The second repair solution includes a second polymer and a second solvent, and the glass transition temperature of the material of the second interface layer is 60°C to 100°C.

8. An optoelectronic device, characterized in that, It includes a cathode and an anode disposed opposite to each other and an active layer disposed between the cathode and the anode, the active layer comprising a thin film as described in any one of claims 1-4 or a thin film prepared by any one of claims 5-7.

9. The optoelectronic device as described in claim 8, characterized in that, The optoelectronic device further includes a hole functional layer located between the anode and the thin film, the hole functional layer including a hole transport layer and / or a hole injection layer; Optionally, the hole transport layer material includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiron NPB, poly (Phenylacetene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-di(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4 '-Bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; Optionally, the material of the hole injection layer includes one or more of the following: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide; and / or, The optoelectronic device further includes an electron transport layer, which is located between the cathode and the thin film; Optionally, the material of the electron transport layer includes at least one selected from fullerene, fullerene derivative, fullerene, metal oxide, and doped metal oxide, wherein the fullerene derivative includes methyl [6,6]-phenyl-C61-butyrate, the metal oxide is selected from at least one selected from ZnO, BaO, TiO2, and SnO2, and the doping element is selected from at least one selected from Al, Mg, Li, In, and Ga; and / or, The anode and cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

10. A display device, characterized in that, Including the optoelectronic device as described in any one of claims 8-9.

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