Gallium oxide single crystal growth apparatus and growth method

Abstract

The application relates to the field of crystal growth, and discloses a gallium oxide single crystal growth device and a growth method.The device comprises a furnace body crucible main body, a crucible cover, a support, a mold and a heater; the crucible main body is arranged in the heater; the bottom of the crucible main body is connected with a rotating device used for driving the crucible main body to rotate; the crucible cover is arranged above the crucible main body; the support is used for abutting and supporting the crucible cover, so that a first gap is formed between the crucible cover and the crucible main body; the mold is arranged in the crucible main body and is fixedly connected with the crucible cover; a second gap is formed between the bottom surface of the mold and the inner bottom surface of the crucible main body; the first gap and the second gap are used for keeping the crucible cover and the mold stationary when the crucible main body rotates, so that the stability of crystal growth is ensured, the heating of the melt and the distribution of doped impurities are more uniform, the shoulder quality in the crystal growth process is improved, and the electrical performance of the doped crystal is better.

Description

Technical Field

[0001] This invention relates to the field of crystal growth, and in particular to a gallium oxide single crystal growth apparatus and method. Background Technology

[0002] Gallium oxide (GaO) is a direct bandgap semiconductor material with a bandgap of 4.8 eV. This ultra-wide bandgap makes it a promising candidate for applications in high-voltage and high-frequency power electronics. Furthermore, GaO crystals exhibit various crystal phases, with the β phase being the most common structure in single GaO crystals. β-Ga₂O₃ has a monoclinic crystal system, and this non-orthogonality leads to its anisotropic physical, chemical, optical, and electronic properties, providing advantages in certain specific applications.

[0003] Gallium oxide (GaO) is currently the only wide-bandgap semiconductor that can be grown using the liquid-phase melt method. The mold-guided method is the most mature technology currently available and can be used to rapidly grow large-size, high-quality β-Ga2O3 crystals. Commercially, rectangular molds are typically used to grow sheet-like crystals. However, due to the shape limitations, the seed rod, mold, and crucible are relatively stationary. This prevents sufficient convection within the crucible, leading to uneven melt temperature and uneven distribution of dopants. Uneven melt heating severely affects the quality of shoulder formation during crystal growth, while uneven dopant distribution degrades the electrical properties of the n-type GaO substrate. Summary of the Invention

[0004] The technical problem to be solved by this invention is: how to make the melt in the crucible form convection so that the distribution of impurities in the melt is more uniform.

[0005] To address the aforementioned technical problems, the present invention provides a gallium oxide single crystal growth apparatus, comprising:

[0006] Furnace body;

[0007] A heater, wherein the heater is disposed within the furnace body;

[0008] The crucible body is disposed inside the furnace, the heater surrounds the crucible body, the crucible body is used to contain gallium oxide raw material, and a rotating device for driving the crucible body to rotate is connected to the bottom of the crucible body;

[0009] A crucible lid, which is disposed above the crucible body;

[0010] A bracket is provided for supporting the crucible lid, and a first gap exists between the crucible lid and the crucible body.

[0011] A mold for growing gallium oxide crystals is disposed inside the crucible body and fixedly connected to the crucible lid. A second gap exists between the bottom surface of the mold and the inner bottom surface of the crucible body.

[0012] Preferably, it also includes a heat-insulating platform disposed within the furnace body, with the crucible body disposed on the heat-insulating platform.

[0013] Preferably, the bracket is fixed to the heat preservation platform, and the side wall of the bracket has a support platform for supporting the crucible lid.

[0014] Preferably, the heat preservation platform has a receiving groove in the middle, the rotating device is disposed in the receiving groove, the crucible body is disposed on the rotating device, and the rotating device is configured to move vertically within the receiving groove.

[0015] Preferably, the rotating device includes a support plate, the top surface of which is provided with a limiting groove, and the bottom surface of the crucible body is provided with a limiting protrusion corresponding to the limiting groove.

[0016] Preferably, one end of the mold penetrates the top surface of the crucible lid; a plurality of connectors are fixedly provided on the bottom surface of the crucible lid, and the connectors are fixedly connected to the side surface of the mold.

[0017] Preferably, the support includes an extension section, which is disposed on the side of the support platform away from the crucible body and extends upward in a vertical direction. The top surface of the extension section is higher than the upper end of the mold, and the upper end of the mold is higher than the crucible cover.

[0018] Preferably, the width of both the first gap and the second gap is in the range of 3mm to 10mm.

[0019] Preferably, the heater, the crucible body, the support, the crucible lid, and the mold have an axisymmetric structure, and the axes of the heater, the crucible body, the support, the crucible lid, and the mold are on the same vertical line.

[0020] Preferably, during the crystal growth process, the crucible body is configured to rotate based on the rotating device.

[0021] The present invention also provides a method for growing gallium oxide single crystals, comprising the following steps:

[0022] Gallium oxide raw material is loaded into the crucible body.

[0023] The furnace body is evacuated by placing a seed crystal inside and then filled with protective gas. The heater is then controlled to heat the furnace body to completely melt the gallium oxide raw material.

[0024] The rotating device is activated to drive the crucible body to rotate. After the seed crystal is lowered to the upper surface of the mold, the furnace body is kept warm for a preset time to allow the seed crystal to melt back and remove defects at the bottom of the seed crystal.

[0025] After the seed crystal melts back, pull up the seed crystal until the liquid film on the upper surface of the mold is pulled up, or the weight change rate of the crucible body increases significantly.

[0026] Continue pulling the seed crystal and lower the temperature inside the furnace to allow the crystal to grow;

[0027] Once the crystal has grown to the required length, the temperature inside the furnace is raised to the melting point of the gallium oxide crystal to melt it off. Then, the temperature inside the furnace is lowered to room temperature to complete the crystal growth.

[0028] Preferably, the rotational speed of the rotating device is from 5 r / min to 50 r / min.

[0029] Compared with the prior art, the gallium oxide single crystal growth apparatus and method provided in this embodiment of the invention have the following advantages:

[0030] In this invention, there are gaps between the bottom surface of the crucible lid and the top surface of the crucible body, and between the bottom surface of the mold and the inner bottom surface of the crucible body. There is no direct contact between the crucible body, the crucible lid, and the mold. When the crucible body rotates, the crucible lid and the mold remain stationary. Thus, the mold, the crucible lid, and the crucible body will move relative to each other. During the crystal growth process, on the one hand, the stability of the growth of the plate-shaped gallium oxide crystal is ensured. On the other hand, the rotation of the crucible body while the mold does not rotate also allows the melt in the crucible body to form convection, the melt is heated more evenly, and the distribution of doped impurities is more uniform. This is beneficial to improving the shoulder formation quality during the growth of gallium oxide crystal and also makes the electrical properties of the doped crystal better. Attached Figure Description

[0031] Figure 1 This is a cross-sectional view of the present invention;

[0032] Figure 2 This is another cross-sectional view of the present invention;

[0033] Figure 3 This is a schematic diagram of the structure of the crucible lid of the present invention;

[0034] Figure 4 This is a schematic diagram of the connection between the crucible lid and the mold according to the present invention;

[0035] Figure 5 This is a schematic diagram of the structure of the bracket of the present invention;

[0036] Figure 6 This is a schematic diagram of the crucible body of the present invention;

[0037] Figure 7 This is a schematic diagram of the rotating device of the present invention.

[0038] In the diagram: 1. Crucible body; 11. Limiting protrusion; 2. Crucible lid; 21. Connector; 3. Bracket; 31. Support platform; 32. Extension section; 4. Mold; 5. Rotating device; 51. Support plate; 52. Limiting groove; 6. Insulation platform; 61. Receiving groove; 7. First gap; 8. Second gap

[0039] 9. Furnace body; 91. Heater. Detailed Implementation

[0040] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0041] like Figures 1 to 5 As shown, a preferred embodiment of the present invention provides a gallium oxide single crystal growth apparatus, which includes a furnace body 9 and a heater 91, a crucible body 1, a crucible cover 2, a support 3 and a mold 4 disposed in the furnace body 9;

[0042] The crucible body 1 is located inside the furnace body 9, and the heater 91 surrounds the crucible body 1. The crucible body 1 is used to contain gallium oxide raw material, and a rotating device 5 for driving the crucible body 1 to rotate is connected to the bottom of the crucible body 1.

[0043] The crucible lid 2 is positioned above the crucible body 1;

[0044] The bracket 3 is used to abut against and support the crucible lid 2 so that there is a first gap 7 between the crucible lid 2 and the crucible body 1;

[0045] The mold 4 is set inside the crucible body 1 and is fixedly connected to the crucible cover 2. The mold 4 is used to grow gallium oxide crystals. The bottom surface of the mold 4 and the inner bottom surface of the crucible body 1 have a second gap 8.

[0046] Specifically, in the traditional scheme, the mold 4 and the crucible lid 2 are fixedly connected to the crucible body 1. When the crucible body 1 rotates, it will also rotate the crucible lid 2 and the mold 4 together. As a result, the molten gallium oxide in the crucible body 1 will have difficulty generating convection, and the distribution of doped impurities in it will be very uneven, which will affect the electrical properties of the finished crystal. In this invention, the support 3 prevents the crucible lid 2 from directly contacting the crucible body 1. A first gap 7 exists between the bottom surface of the crucible lid 2 and the top surface of the crucible body 1. Furthermore, the mold 4 also avoids direct contact with the crucible body 1. A second gap 8 exists between the bottom surface of the mold 4 and the inner bottom surface of the crucible body 1. Thus, when the rotating device 5 rotates the crucible body 1, the liquid gallium oxide raw material inside the crucible body 1 rotates, while the crucible lid 2 and the mold 4 remain stationary. The relative movement between the crucible lid 2, the mold 4, and the crucible body 1 causes convection in the melt inside the crucible body 1, resulting in more uniform heating of the melt and a more uniform temperature. It also makes the distribution of doped impurities in the melt more uniform, improves the shoulder formation quality during the growth of gallium oxide crystals, and enhances the electrical properties of the doped crystals.

[0047] Furthermore, in traditional methods, during crystal growth, the crucible body 1 and the crucible lid 2 are fixedly connected without gaps. Gallium oxide vapor inside the crucible body 1 can only flow out through the gap between the mold 4 and the crucible lid 2, thus affecting the airflow near the top of the mold 4 and consequently the crystal growth at the top of the mold 4. In this embodiment, however, the gallium oxide vapor evaporated inside the crucible body 1 can flow out through the first gap 7, rather than through the gap between the mold 4 and the crucible lid 2. This improves the stability of the airflow near the top of the mold 4, effectively alleviating the problem of volatile accumulation on the crystal surface and improving crystal quality. A stable thermal flow field also facilitates uniform shoulder formation during gallium oxide crystal growth, which is significant for improving the quality of gallium oxide crystals.

[0048] Furthermore, since the bottom surface of the mold 4 does not contact the inner bottom surface of the crucible body 1, there is a second gap 8 between them. The bottom of the mold 4 does not need to be designed with a groove structure for siphoning the melt, and the absorption of the melt is more uniform, which promotes the improvement of the quality and electrical properties of gallium oxide crystal.

[0049] In some embodiments, a heat preservation platform 6 is also provided inside the furnace body 9, and the crucible body 1 is placed on the heat preservation platform 6.

[0050] Furthermore, the bracket 3 is also fixed to the insulation platform 6, and the side wall of the bracket 3 has a support platform 31 for supporting the crucible lid 2.

[0051] Specifically, the heat preservation platform 6 provides heat preservation for the crucible body 1, reducing heat loss from the crucible body 1, and also stabilizes the temperature field within the furnace body 9, providing a more stable and reliable temperature field for crystal growth. Furthermore, in this embodiment, the support 3 has a ring structure, with a support platform 31 provided on its inner sidewall. In other embodiments, the support 3 comprises multiple circumferentially distributed columns or arc-shaped plates, with the support platform 31 provided on the side facing the crucible body 1.

[0052] In some embodiments, the heat-insulating platform 6 has a receiving groove 61 in the middle, a rotating device 5 is disposed in the receiving groove 61, and the crucible body 1 is mounted on the rotating device 5. The rotating device 5 is configured to move vertically within the receiving groove 61. Specifically, the configuration of the receiving groove 61 provides space for the vertical movement of the rotating device 5, allowing the rotating device 5 to move up and down vertically within the receiving groove 61, thereby driving the crucible body 1 to move vertically, thus adjusting the width of the second gap 8 and the width of the first gap 7 to meet the production requirements of gallium oxide crystals.

[0053] like Figure 6 and Figure 7 As shown, in some embodiments, the rotating device 5 includes a support plate 51, the top surface of which is provided with a limiting groove 52, and the bottom surface of the crucible body 1 is provided with a limiting protrusion 11 corresponding to the limiting groove 52. Specifically, the limiting groove 52 and the limiting protrusion 11 cooperate to enable the rotating device 5 to drive the crucible body 1 to rotate better and more stably. In one specific embodiment, both the limiting groove 52 and the limiting protrusion 11 are cross-shaped structures, while in other embodiments, the limiting protrusion 11 may include at least two dispersed cylinders, and the limiting groove 52 includes at least two grooves corresponding to the cylinders. The cooperation between the limiting groove 52 and the limiting protrusion 11 is sufficient to restrict the rotational tendency between the crucible body 1 and the rotating device 5, so that the crucible body 1 can rotate together with the rotating device 5. The driving device also includes a transmission rod. The end of the transmission rod away from the crucible body passes through the insulation platform and the furnace body 9 and is located on the outside of the furnace body 9. It is connected to a first power source such as a motor. The first power source can drive the rotating device 5 and the crucible body 1 to rotate together through the transmission rod. Of course, there is also a second power source to drive the rotating device 5 to move up and down in the vertical direction, thereby driving the crucible body 1 to move up and down.

[0054] like Figure 3 and Figure 4As shown, in some embodiments, one end of the mold 4 penetrates the top surface of the crucible lid 2; multiple connectors 21 are fixedly provided on the bottom surface of the crucible lid 2, with one side of the connector 21 connected to the bottom surface of the crucible lid 2 and the other side of the connector 21 fixedly connected to the side surface of the mold 4. Specifically, the connector 21 is L-shaped, with its two mutually perpendicular outer sides fixedly connected to the bottom surface of the crucible lid 2 and the side surface of the mold 4, respectively. Connectors 21 are provided on both sides of the mold 4, making the connection between the mold 4 and the crucible lid 2 more stable and reliable. The connector 21 can be fixed to the crucible lid 2 by welding, and the connector 21 can be fixed to the mold 4 by welding or by bolts.

[0055] In some embodiments, the support 3 includes an extension section 32, which is disposed on the side of the support platform 31 away from the crucible body 1 and extends upward in a vertical direction. The top surface of the extension section 32 is higher than the top end of the mold 4, and the top end of the mold 4 is higher than the top surface of the crucible cover 2. Specifically, both the support 3 and the crucible body 1 are made of metal, while the heater 91 uses an induction coil. When the induction coil is energized, both the crucible body 1 and the support 3 generate heat. The heat generated by the crucible body is used to melt the gallium oxide raw material, while the heat generated by the extension section 32 of the support 3 under the action of the induction coil also diffuses towards the center, thereby providing heat to the upper surface of the mold 4 and the gallium oxide crystal that has just been pulled out above the mold 4. The extension section 32 also acts as a post-heater, making the temperature of the surface of the mold 4 more uniform and improving the crystal growth effect. It also allows the crystal that has already grown above the mold 4 to be heated by the extension section 32, thereby achieving the effect of crystal thermal annealing and improving the quality of the crystal. In addition, the setting of the extension section 32 can also reduce the influence of the airflow field on the upper surface of the mold 4, thereby improving the growth quality, stability and reliability of the crystal.

[0056] In some embodiments, the widths of the first slit 7 and the second slit 8 are both in the range of 3mm to 10mm. Specifically, the height of the rotating device 5 and the crucible body 1 can be adjusted, thereby adjusting the width range of the first slit 7 and the second slit 8. Depending on the specific parameter requirements during crystal production, the width range of the first slit 7 and the second slit 8 can be adjusted to better meet production requirements. In a preferred embodiment, the optimal width range of the first slit 7 and the second slit 8 is 3mm to 10mm.

[0057] Furthermore, the heater 91, crucible body 1, support 3, crucible lid 2, and mold 4 are axisymmetric structures, with their axes aligned vertically. During crystal growth, the crucible body 1 is configured to rotate based on the rotating device 5. The restriction of the thermal field position and the rotation of the crucible body are both designed to ensure more uniform heating of the melt within the crucible body 1, facilitating crystal growth.

[0058] The present invention also provides a method for growing gallium oxide single crystals, comprising the following steps:

[0059] Gallium oxide raw material is loaded into crucible body 1, seed crystal is placed in furnace body 9, furnace body 9 is evacuated and protective gas is introduced into furnace body 9, and then furnace body 9 is heated to completely melt gallium oxide raw material.

[0060] Turn on the rotating device 5 to drive the crucible body 1 to rotate, and lower the seed crystal to the upper surface of the mold 4. The furnace body 9 is kept warm for a preset time to allow the seed crystal to melt back and remove defects at the bottom of the seed crystal.

[0061] After the seed crystal melts back, pull up the seed crystal until the liquid film on the upper surface of the mold 4 is pulled up, or the weight change rate of the crucible body 1 increases significantly.

[0062] Continue pulling the seed crystal and lower the temperature inside furnace 9 to allow the crystal to grow;

[0063] Once the crystal has grown to the required length, the temperature inside the furnace 9 is raised to the melting point of the gallium oxide crystal to melt and remove the gallium oxide crystal. Then, the temperature inside the furnace 9 is lowered to room temperature to complete the crystal growth.

[0064] Furthermore, the rotational speed of the rotating device 5 is from 5 r / min to 50 r / min.

[0065] Specifically, when starting the rotating device 5 to drive the crucible body 1 to rotate, the rotation speed of the rotating device 5 should first be controlled at 0.5 r / min. After confirming that the crucible has started rotating while the crucible cover 2 and mold 4 remain stationary, the rotation speed of the rotating device 5 should be adjusted to 5 r / min to 50 r / min. In a preferred embodiment, the rotation speed of the rotating device 5 is 20 r / min. In actual use, the individual rotation of the crucible body 1 can make the distribution of doped impurities in the melt more uniform, thereby improving the electrical properties of the finished crystal. Different rotation speeds of the crucible body 1 will also bring different effects. Within the range of 5 r / min to 50 r / min, the optimal rotation speed of the rotating device 5 is 20 r / min, as shown in the comparison table below:

[0066]

[0067]

[0068] At a rotation speed of 20 r / min, the resistivity difference between the upper and lower parts of the gallium oxide crystal is smaller, indicating that its doping uniformity is good.

[0069] Furthermore, when evacuating the furnace body 9, it is necessary to evacuate the furnace body 9 to a pressure between 0.01 atm and 0.1 atm. Then, a protective gas is introduced to raise the pressure inside the furnace body 9 to between 1 atm and 1.5 atm, preferably 0.02 atm. Then, the internal temperature of the furnace body 9 is controlled to rise at a rate of 100°C / h to 500°C / h, so that the temperature at the center of the upper surface of the mold 4 rises to between 1750°C and 1950°C. Then, the temperature is held for 1 hour to 6 hours to completely melt the raw material.

[0070] Then, after the seed crystal is lowered to the upper surface of the mold 4, the seed crystal is melted back by 1 mm to 5 mm and kept at the temperature for 0.5 h to 1 h to remove defects at the bottom of the seed crystal; after the seed crystal is melted back, the seed crystal is pulled up at 2 mm / h to 15 mm / h until the liquid film on the upper surface of the mold 4 is pulled up, or the weight change rate of the crucible body 1 increases significantly.

[0071] Continue pulling the seed crystal at a rate of 2 mm / h to 15 mm / h, while simultaneously reducing the temperature inside the crystal growth furnace at a rate of 2 °C / h to 10 °C / h to shrink the crystal diameter and eliminate defects.

[0072] Change the seed crystal pulling rate to 5 mm / h to 40 mm / h, and change the cooling rate of the crystal growth furnace to 3℃ / h to 15℃ / h, so that the crystal grows along the width and thickness directions until the crystal thickness and width are equal to the thickness and width of the growth gap in mold 4.

[0073] Maintain the seed crystal pulling rate at 5 mm / h to 40 mm / h, and change the temperature drop rate in the crystal growth furnace to 1℃ / h to 5℃ / h to achieve constant diameter crystal growth;

[0074] Once the crystal has grown to the required length, the temperature inside the crystal growth furnace is raised to the melting point of gallium oxide at a rate of 30℃ / h to 60℃ / h to melt and remove the gallium oxide crystal. Then, the temperature inside the crystal growth furnace is lowered to room temperature at a rate of 100℃ / h to 800℃ / h to complete the crystal growth.

[0075] In summary, this invention provides a gallium oxide single crystal growth apparatus and method. By creating gaps between the bottom surface of the crucible lid 2 and the top surface of the crucible body 1, and between the bottom surface of the mold 4 and the inner bottom surface of the crucible body 1, the crucible body 1 does not directly contact the crucible lid 2 and the mold 4. When the crucible body 1 rotates, the crucible lid 2 and the mold 4 remain stationary, while relative movement occurs between the mold 4, the crucible lid 2, and the crucible body 1. This ensures the stability of the growth of the sheet-like gallium oxide crystal. Furthermore, the rotation of the crucible body 1 while the mold 4 remains stationary allows for convection of the melt within the crucible body 1, resulting in more uniform heating of the melt and a more uniform distribution of doped impurities. This is beneficial for improving the shoulder formation quality during gallium oxide crystal growth and also enhances the electrical properties of the doped crystal. In addition, the gallium oxide vapor evaporated within the crucible body 1 can flow out through the first gap 7, rather than through the gap between the mold 4 and the crucible lid 2, improving the stability of the airflow and effectively alleviating the problem of volatile accumulation on the crystal surface, thus improving crystal quality. The second gap 8 also eliminates the need for a groove structure at the bottom of the mold 4 to siphon the melt, making the absorption of the melt more uniform and promoting the improvement of gallium oxide crystal quality and electrical performance.

[0076] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make several improvements and substitutions without departing from the technical principles of the present invention, and these improvements and substitutions should also be considered within the scope of protection of the present invention.

Claims

1. A gallium oxide single crystal growth apparatus, characterized in that, include: Furnace body; A heater, wherein the heater is disposed within the furnace body; The crucible body is disposed inside the furnace, the heater surrounds the crucible body, the crucible body is used to contain gallium oxide raw material, and a rotating device for driving the crucible body to rotate is connected to the bottom of the crucible body; A crucible lid, which is disposed above the crucible body; A bracket is provided for supporting the crucible lid, and a first gap exists between the crucible lid and the crucible body. A mold for growing gallium oxide crystals is disposed inside the crucible body and fixedly connected to the crucible lid. A second gap exists between the bottom surface of the mold and the inner bottom surface of the crucible body.

2. The gallium oxide single crystal growth apparatus according to claim 1, characterized in that, It also includes a heat preservation platform, which is located inside the furnace body, and the crucible body is located on the heat preservation platform.

3. The gallium oxide single crystal growth apparatus according to claim 2, characterized in that, The bracket is fixed to the heat preservation platform, and the side wall of the bracket has a support platform for supporting the crucible lid.

4. The gallium oxide single crystal growth apparatus according to claim 3, characterized in that, The heat preservation platform has a receiving groove in the middle, the rotating device is located in the receiving groove, the crucible body is located on the rotating device, and the rotating device is configured to move vertically within the receiving groove.

5. The gallium oxide single crystal growth apparatus according to claim 4, characterized in that, The rotating device includes a support plate, the top surface of which is provided with a limiting groove, and the bottom surface of the crucible body is provided with a limiting protrusion corresponding to the limiting groove.

6. The gallium oxide single crystal growth apparatus according to claim 1, characterized in that, One end of the mold penetrates the top surface of the crucible lid; multiple connectors are fixedly provided on the bottom surface of the crucible lid, and the connectors are fixedly connected to the side of the mold.

7. The gallium oxide single crystal growth apparatus according to claim 4, characterized in that, The support includes an extension section, which is located on the side of the support platform away from the crucible body and extends upward in a vertical direction. The top surface of the extension section is higher than the upper end of the mold, and the upper end of the mold is higher than the crucible cover.

8. The gallium oxide single crystal growth apparatus according to claim 1, characterized in that, The width of both the first gap and the second gap ranges from 3mm to 10mm.

9. The gallium oxide single crystal growth apparatus according to claim 1, characterized in that, The heater, the crucible body, the support, the crucible lid, and the mold are axially symmetrical structures, and the axes of the heater, the crucible body, the support, the crucible lid, and the mold are on the same vertical line.

10. The gallium oxide single crystal growth apparatus according to claim 1, characterized in that, During the crystal growth process, the crucible body is configured to rotate based on the rotating device.

11. A method for growing gallium oxide single crystals, using the gallium oxide single crystal growth apparatus as described in any one of claims 1 to 6, characterized in that, Includes the following steps: Gallium oxide raw material is loaded into the crucible body, seed crystal is placed in the furnace body, the furnace body is evacuated and protective gas is introduced into the furnace body, and then the furnace body is heated to completely melt the gallium oxide raw material. The rotating device is activated to drive the crucible body to rotate, lowering the seed crystal to the upper surface of the mold. The furnace body is kept warm for a preset time to allow the seed crystal to melt back and remove defects at the bottom of the seed crystal. After the seed crystal melts back, pull up the seed crystal until the liquid film on the upper surface of the mold is pulled up, or the weight change rate of the crucible body increases significantly. Continue pulling the seed crystal and lower the temperature inside the furnace to allow the crystal to grow; Once the crystal has grown to the required length, the temperature inside the furnace is raised to the melting point of the gallium oxide crystal to melt it off. Then, the temperature inside the furnace is lowered to room temperature to complete the crystal growth.

12. The gallium oxide single crystal growth method according to claim 11, characterized in that, The rotational speed of the rotating device is from 5 r / min to 50 r / min.

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