A manufacturing apparatus for silicon carbide single crystal production

Abstract

This invention discloses a manufacturing apparatus for silicon carbide single crystal production, belonging to the technical field of silicon carbide single crystal production equipment. It includes a support frame on which a heating barrel is fixedly mounted; a first rotating plate rotatably mounted on the heating barrel, on which a positioning component is mounted; a holding cylinder located inside the heating barrel and connected to the positioning component; a drive motor with its output end connected to a reciprocating motion component; an air blower and an air extraction pipe, both mounted on and connected to the heating barrel; and a gas supply and exhaust component mounted on the support frame and connected to the reciprocating motion component. A lifting electric cylinder drives the seed crystal cylinder to rise and fall, thereby controlling the position of the seed crystal cylinder within the holding cylinder, facilitating the formation of silicon carbide single crystals. Rotating the first rotating plate allows the formed silicon carbide single crystal to be carried out of the heating barrel. The cooperation of the gas supply and exhaust component and the reciprocating motion component allows the original air in the heating barrel to be discharged, and inert gas to be introduced into the heating barrel, thus providing a gaseous environment for the formation of silicon carbide single crystals.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide single crystal production equipment technology, and specifically discloses a manufacturing apparatus for silicon carbide single crystal production. Background Technology

[0002] Silicon carbide single crystals are the core substrate material for the third-generation semiconductor industry. They possess outstanding properties such as a large bandgap, high breakdown field strength, excellent thermal conductivity, high temperature resistance, high pressure resistance, and radiation resistance. They are widely used in high-tech fields such as new energy vehicles, photovoltaic and wind power, rail transportation, aerospace, high-end radio frequency devices, and power semiconductor chips. Single crystal growth and preparation is the core key process in the industrial production of silicon carbide. The purity of the growth environment, the accuracy of process adaptation, and the stability of equipment operation directly determine the crystal integrity, defect density, forming regularity, and yield of silicon carbide single crystals. These factors are crucial for ensuring the performance stability and lifespan of downstream semiconductor devices.

[0003] The manufacturing equipment for silicon carbide single crystal production is a specialized precision device adapted to the high-temperature growth, atmosphere control, molding preparation, and finished product removal of silicon carbide single crystals. Relying on the functional structure of high-temperature crystal growth, closed atmosphere protection, seed crystal assembly, and finished product output, it is suitable for the precision mass production of large-size, low-defect silicon carbide single crystals. It is widely used in third-generation semiconductor material production bases, semiconductor chip manufacturing enterprises, and new material research and development platforms. It can provide a stable, clean, and controllable preparation environment for silicon carbide single crystal growth and is the core industrial equipment for realizing the large-scale, high-quality, and precision production of silicon carbide single crystals.

[0004] In the industrial-scale production of silicon carbide single crystals, the adaptability of seed crystal installation, the convenience of finished product unloading, and the ability to control furnace atmosphere replacement and inert gas supply directly affect the matching degree of single crystal growth process, crystal quality, and overall production efficiency. Currently, traditional manufacturing equipment used in silicon carbide single crystal production faces critical problems that urgently need to be addressed in actual mass production and trial production. Existing silicon carbide single crystal growth equipment has a relatively rigid structural design, with most seed crystal cylinders using a fixed installation structure. This makes it impossible to flexibly adjust the seed crystal's height within the container according to the single crystal growth process requirements. The seed crystal position cannot be dynamically fine-tuned, making it difficult to adapt to the growth rhythm and forming space requirements of the silicon carbide single crystal forming process. This easily leads to deviations in single crystal formation morphology, unstable crystal quality, and problems such as crystallization defects and irregular forming, seriously affecting the finished product quality and yield of silicon carbide single crystals. Meanwhile, traditional equipment has a simple single-crystal material handling structure after forming, lacking a dedicated rotating material discharge structure. The forming of single crystals mostly relies on manual material handling, which is cumbersome and not only easily causes single crystal damage from impacts, but also significantly reduces the overall preparation efficiency. At the same time, the gas replacement structure of traditional silicon carbide preparation equipment is imperfect, which cannot achieve efficient and thorough exhaust of air inside the furnace. The equipment has poor air exchange effect, and air, oxygen and other impurities are easy to remain in the heating tank. Under the high-temperature preparation environment, they are very likely to react with the raw materials, resulting in oxidation defects and impurity inclusions in the single crystals. This seriously damages the pure growth environment required for single crystal forming. In addition, traditional equipment cannot automatically, accurately and continuously replenish inert protective gas, making it difficult to maintain a stable inert gas protective atmosphere. The automation level of gas environment control is low and the adaptability is poor. Therefore, a manufacturing device for silicon carbide single crystal production was invented to address these shortcomings. Summary of the Invention

[0005] To address the aforementioned technical problems, the present invention provides the following technical solution: a manufacturing apparatus for producing silicon carbide single crystals, comprising a support frame on which a heating barrel is fixedly mounted.

[0006] The first rotating plate is rotatably mounted on the heating barrel, and a positioning component is installed on it.

[0007] The container is located inside the heating tank and is connected to the positioning component.

[0008] The drive motor has a reciprocating motion component connected to its output end.

[0009] The blower and the suction pipe are both installed on the heating barrel and are connected to the heating barrel.

[0010] The air supply and venting assembly is mounted on the support frame and connected to the reciprocating motion assembly.

[0011] Furthermore, the positioning assembly includes a positioning clamping plate slidably mounted on the lower side of the first rotating plate. The side of the positioning clamping plate facing the heating barrel is arc-shaped, and the radius of the arc-shaped side of the positioning clamping plate is equal to the radius of the outer surface of the heating barrel. A first driving shaft is fixedly mounted on the side of the positioning clamping plate away from the heating barrel, and the first driving shaft is slidably connected to the first rotating plate.

[0012] Furthermore, the positioning assembly also includes a first limiting ring fixedly installed on the first rotating plate, the first limiting ring being provided with a positioning groove, and a slot being provided on the inner wall of the positioning groove; a second rotating plate is rotatably installed on the first rotating plate, and a release block is fixedly installed on the second rotating plate.

[0013] Furthermore, the cross-sectional dimensions of the release block are consistent with the cross-sectional dimensions of the card slot.

[0014] Furthermore, a lifting cylinder bracket is fixedly installed on the second rotating plate, a lifting cylinder is fixedly installed on the lifting cylinder bracket, a second limiting ring is fixedly installed on the telescopic end of the lifting cylinder, the second limiting ring is coaxial with the holding cylinder, and multiple seed crystal cylinders are fixedly installed on the side of the second limiting ring facing the holding cylinder, each seed crystal cylinder is filled with a seed crystal.

[0015] Furthermore, a lifting shaft is fixedly installed on the container, and the lifting shaft is slidably connected to the first rotating plate and the first limiting ring respectively. An insertion hole is provided on the outer surface of the lifting shaft, and a positioning clip is slidably connected to the outer surface of the lifting shaft. A second positioning block is slidably installed on the outer surface of the positioning clip, and the second positioning block is fixedly installed on the first rotating plate.

[0016] Furthermore, the end of the positioning pin facing the lifting shaft is hemispherical, and the radius of the hemispherical end of the lifting shaft is equal to the radius of the inner wall of the insertion hole. When the lifting shaft enters the inner wall of the insertion hole, the holding cylinder is in contact with the first rotating plate.

[0017] Furthermore, an air-blowing box is fixedly installed on the support frame, and the air-blowing box is connected to the interior of the heating barrel. The air-blowing rod is connected to the interior of the heating barrel through the air-blowing box. The air supply and release assembly includes an air-blowing piston rod that is slidably installed on the inner wall of the air-blowing rod and an air-extraction piston rod that is slidably installed on the inner wall of the air-extraction pipe. An air outlet pipe is also installed on the outer surface of the air-extraction pipe, and the air outlet pipe is connected to the interior of the heating barrel through the air-extraction pipe.

[0018] Furthermore, the reciprocating motion assembly includes a motion rod slidably mounted on a support frame, the motion rod being fixedly connected to an air-blowing piston rod and an air-suction piston rod respectively, a drive turntable being fixedly mounted on the output end of the transmission motor, and a second drive shaft being fixedly mounted on the end of the drive turntable away from the transmission motor.

[0019] Furthermore, a T-shaped rod is slidably mounted on the support frame, and the T-shaped rod is provided with a first sliding groove and a second sliding groove. The second driving shaft is slidably mounted on the inner wall of the first sliding groove, and the moving rod is slidably mounted on the inner wall of the second sliding groove.

[0020] Compared with the prior art, the beneficial effects of this application are as follows: (1) The present invention uses a lifting electric cylinder to drive the seed crystal cylinder to lift and lower, thereby controlling the position of the seed crystal cylinder in the holding cylinder, which facilitates the formation of silicon carbide single crystals, and the formed silicon carbide single crystals can be taken out of the heating barrel by rotating the first rotating plate.

[0021] (2) The present invention achieves the discharge of the original air in the heating barrel and the introduction of inert gas into the heating barrel by the cooperation of the gas supply and discharge component and the reciprocating motion component, thereby providing a gas environment for silicon carbide single crystal forming. Attached Figure Description

[0022] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the overall structure provided for an embodiment of this application.

[0023] Figure 2 This is a schematic diagram showing the positions of the support frame and the upper top plate provided in an embodiment of this application.

[0024] Figure 3 Provided for the embodiments of this application Figure 2 A magnified schematic diagram of the structure at point A in the middle.

[0025] Figure 4 This is a schematic diagram showing the location of the heating tank in an embodiment of this application.

[0026] Figure 5 Provided for the embodiments of this application Figure 4 A magnified schematic diagram of the structure at point B in the middle.

[0027] Figure 6 This is a schematic diagram of the mounting cylinder position provided in an embodiment of this application.

[0028] Figure 7 This is a schematic diagram of the position of the upper fixing plate provided in an embodiment of this application.

[0029] Figure 8 Provided for the embodiments of this application Figure 7 A magnified schematic diagram of the structure at point C.

[0030] Figure 9 This is a schematic diagram of the seed crystal tube position provided in an embodiment of this application.

[0031] Figure 10 This is a schematic diagram showing the positions of the motion rod and motion groove provided in an embodiment of this application.

[0032] Figure 11A schematic diagram of the first support plate and the second support plate provided in the embodiments of this application.

[0033] Figure 12 Provided for the embodiments of this application Figure 11 A magnified schematic diagram of the structure at point D in the middle.

[0034] Reference numerals: 101-Support frame; 102-Upper top plate; 201-Heating tank; 202-First rotating plate; 203-First fixing block; 204-First rotating rod; 205-Rotating handle; 206-Fixing plate; 207-Positioning clamping plate; 208-First positioning plate; 209-First driving shaft; 210-First limiting plate; 211-First spring; 301-Lifting cylinder bracket; 302-Lifting cylinder; 303-Positioning support plate; 304-First limiting ring; 305-Second positioning block; 306-Second positioning plate; 307-Second spring; 308-Positioning clip shaft; 309-Lifting shaft; 310-Installation cylinder; 311-Second rotating plate; 312-Container cylinder; 313-Third positioning plate; 314 - Slot; 315 - Positioning slot; 316 - Release block; 317 - Insertion hole; 318 - Upper fixing plate; 319 - Extension shaft; 320 - Inner ring; 321 - Second limiting ring; 322 - Mounting block; 323 - Seed crystal tube; 401 - Moving rod; 402 - Moving groove; 403 - Intermediate rod; 404 - Air blasting box; 405 - Air blasting rod; 406 - Air blasting piston rod; 407 - Air outlet pipe; 408 - Air extraction pipe; 409 - Air extraction piston rod; 410 - Connecting block; 411 - First support plate; 412 - Second support plate; 413 - Drive motor; 414 - Drive turntable; 415 - Second drive shaft; 416 - T-shaped rod; 417 - First sliding groove; 418 - Second sliding groove; 419 - Temperature control device. Detailed Implementation

[0035] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. All directional indicators (such as up, down, left, right, front, back, etc.) in the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indicator will also change accordingly.

[0036] Appendix Figure 1 To the attached Figure 5As shown, in a preferred embodiment, a manufacturing apparatus for producing silicon carbide single crystals includes a support frame 101. An upper top plate 102 is fixedly mounted on the support frame 101. A first support plate 411 and a second support plate 412 are also fixedly mounted on the support frame 101. The first support plate 411 is located below the upper top plate 102, and the second support plate 412 is located below the first support plate 411. A heating barrel 201 is fixedly mounted on the upper top plate 102.

[0037] Appendix Figure 2 To the attached Figure 7 As shown, in a preferred embodiment, a first fixing block 203 is fixedly installed on the heating barrel 201, a first rotating rod 204 is rotatably installed on the first fixing block 203, a rotating handle 205 and a first rotating plate 202 are fixedly installed on the first rotating rod 204, a positioning component is installed on the first rotating plate 202, and the positioning component can be used to position the first rotating plate 202 and the heating barrel 201. A first positioning plate 208 is fixedly installed on the outer surface of the heating barrel 201, and the first positioning plate 208 is located below the first fixing block 203. When the heating barrel 201 rotates 90°, the first rotating plate 202 and the first positioning plate 208 are in contact.

[0038] Appendix Figure 3 To the attached Figure 9 As shown, in a preferred embodiment, the positioning assembly includes a positioning clamping plate 207 slidably mounted on the lower side of the first rotating plate 202 and a first limiting ring 304 fixedly mounted on the first rotating plate 202. The side of the positioning clamping plate 207 facing the heating barrel 201 is arc-shaped, and the radius of the arc-shaped side of the positioning clamping plate 207 is equal to the radius of the outer surface of the heating barrel 201. A first driving shaft 209 is fixedly mounted on the side of the positioning clamping plate 207 away from the heating barrel 201.

[0039] Appendix Figure 4 To the attached Figure 10 As shown, in a preferred embodiment, a first drive shaft 209 is provided, and a fixing plate 206 is slidably mounted on the outer surface of the first drive shaft 209. The fixing plate 206 is fixedly mounted on the lower side of the first rotating plate 202. A first limiting plate 210 is fixedly mounted on one end of the first drive shaft 209 away from the positioning and pressing plate 207. A first spring 211 is wound around the outer surface of the first drive shaft 209. One end of the first spring 211 is fixedly mounted on the side of the fixing plate 206, and the other end of the first spring 211 is fixedly mounted on the side of the first limiting plate 210.

[0040] Appendix Figure 5 To the attached Figure 10As shown, in a preferred embodiment, a positioning groove 315 is provided on the first limiting ring 304, and a slot 314 is provided on the inner wall of the positioning groove 315; a second rotating plate 311 is rotatably mounted on the first rotating plate 202, and a release block 316 is fixedly mounted on the second rotating plate 311. The cross-sectional dimensions of the release block 316 are the same as the cross-sectional dimensions of the slot 314. When the release block 316 is aligned with the slot 314 by rotating the second rotating plate 311, the second rotating plate 311 can be pulled out from the first limiting ring 304.

[0041] Appendix Figure 4 To the attached Figure 11 As shown, in a preferred embodiment, an mounting cylinder 310 is fixedly mounted on the second rotating plate 311, a positioning support plate 303 is fixedly mounted on the mounting cylinder 310, a lifting cylinder bracket 301 is fixedly mounted on the positioning support plate 303, a lifting cylinder 302 is fixedly mounted on the lifting cylinder bracket 301, an upper fixing plate 318 is fixedly mounted on the telescopic end of the lifting cylinder 302, an extension shaft 319 is fixedly mounted on the lower side of the upper fixing plate 318, and a second limiting device is fixedly mounted on the lower side of the extension shaft 319. Position ring 321, mounting block 322 is fixedly installed on the lower side of second limiting ring 321, mounting block 322 is coaxial with container 312, inner ring 320 is fixedly installed on container 312, inner ring 320 is slidably connected to second limiting ring 321, multiple seed crystal tubes 323 are fixedly installed on the side of second limiting ring 321 facing container 312, each seed crystal tube 323 is filled with seed crystal, the seed crystal tube 323 can be driven to rise and fall in container 312 by lifting electric cylinder 302.

[0042] Appendix Figure 3 To the attached Figure 11 As shown, in a preferred embodiment, a lifting shaft 309 is fixedly installed on the holding cylinder 312. The lifting shaft 309 is slidably connected to the first rotating plate 202 and the first limiting ring 304 respectively. An insertion hole 317 is provided on the outer surface of the lifting shaft 309. A positioning clip shaft 308 is slidably connected to the outer surface of the lifting shaft 309. A second positioning block 305 is slidably installed on the outer surface of the positioning clip shaft 308. A second positioning plate 306 is fixedly installed at the end of the positioning clip shaft 308 away from the lifting shaft 309. The second positioning block 305 is fixedly installed on the first rotating plate 202. A second spring 307 is wound on the outer surface of the positioning clip shaft 308.

[0043] Appendix Figure 4 To the attached Figure 12As shown, in a preferred embodiment, one end of the second spring 307 is fixedly installed on the side of the second positioning plate 306, and the other end of the second spring 307 is fixedly installed on the side of the second positioning block 305. The end of the positioning pin 308 facing the lifting shaft 309 is hemispherical, and the radius of the hemispherical end of the lifting shaft 309 is equal to the radius of the inner wall of the insertion hole 317. When the lifting shaft 309 enters the inner wall of the insertion hole 317, the holding cylinder 312 is in contact with the first rotating plate 202. A third positioning plate 313 is fixedly installed on the outer surface of the lifting shaft 309, and the lower side of the third positioning plate 313 is slidably connected to the positioning pin 308.

[0044] Appendix Figure 7 To the attached Figure 12 As shown, in a preferred embodiment, an air blasting box 404 is fixedly installed on the upper top plate 102. The air blasting box 404 is filled with inert gas and is connected to the interior of the heating barrel 201. A gas supply and release assembly is connected to the heating barrel 201. The gas supply and release assembly includes an air blasting rod 405 and a suction pipe 408. The air blasting rod 405 is connected to the interior of the heating barrel 201 through the air blasting box 404.

[0045] Appendix Figure 6 To the attached Figure 12 As shown, in a preferred embodiment, a blower piston rod 406 is slidably mounted on the inner wall of the blower rod 405. A one-way valve is installed between the blower box 404 and the heating barrel 201. The one-way valve ensures that gas can only be sent from the blower box 404 into the heating barrel 201, and gas inside the heating barrel 201 cannot enter the blower box 404. A suction pipe 408 is installed on the outer surface of the heating barrel 201 and communicates with the inside of the heating barrel 201. A one-way valve 2 is installed at the connection of the heating tank 201. The one-way valve 2 ensures that gas can only enter the exhaust pipe 408 from the heating tank 201, and gas in the exhaust pipe 408 cannot enter the heating tank 201. An exhaust piston rod 409 is slidably installed on the inner wall of the exhaust pipe 408. An exhaust pipe 407 is also installed on the outer surface of the exhaust pipe 408. The exhaust pipe 407 is connected to the inside of the heating tank 201 through the exhaust pipe 408. A temperature control device 419 is fixedly installed at the lower part of the heating tank 201.

[0046] Appendix Figure 8 To the attached Figure 11 As shown, in a preferred embodiment, the inner diameter of the blower rod 405 is 2-4 times the inner diameter of the suction pipe 408.

[0047] Appendix Figure 6 To the attached Figure 12As shown, in a preferred embodiment, a reciprocating motion assembly is connected between the air-blowing piston rod 406 and the air-suction piston rod 409. A motion groove 402 is provided on the upper top plate 102, and an intermediate rod 403 is fixedly installed on the inner wall of the motion groove 402. The reciprocating motion assembly includes a motion rod 401 slidably installed on the intermediate rod 403. The motion rod 401 is slidably installed on the inner wall of the motion groove 402 and is fixedly connected to the air-blowing piston rod 406. A connecting block 410 is fastened to the motion rod 401 and can be detached from the motion rod 401. The connecting block 410 is fixedly connected to the air-suction piston rod 409. Threaded holes are provided on the connecting block 410 and the upper top plate 102, and fastening bolts are installed in the threaded holes. The fastening bolts can fasten the connecting block 410 to the upper top plate 102.

[0048] Appendix Figure 7 To the attached Figure 12 As shown, in a preferred embodiment, a drive motor 413 is fixedly installed on the second support plate 412. The output end of the drive motor 413 is rotatably connected to the first support plate 411. The drive motor 413 is fixedly installed between the first support plate 411 and the second support plate 412. A drive turntable 414 is fixedly installed on the output end of the drive motor 413. A second drive shaft 415 is fixedly installed on the end of the drive turntable 414 away from the drive motor 413. A T-shaped rod 416 is slidably installed on the first support plate 411. A first sliding groove 417 and a second sliding groove 418 are provided on the T-shaped rod 416. The second drive shaft 415 is slidably installed on the inner wall of the first sliding groove 417. The moving rod 401 is slidably installed on the inner wall of the second sliding groove 418. The rotation of the output end of the drive motor 413 can drive the blower piston rod 406 and the suction piston rod 409 to slide back and forth along the inner walls of the blower rod 405 and the suction pipe 408, respectively.

[0049] The working principle of this invention is as follows: (a) Before operation, rotate the mounting cylinder 310. The second rotating plate 311 drives the release block 316 to move, thereby aligning the release block 316 with the slot 314. At this time, the second rotating plate 311, the upper fixing plate 318, the mounting block 322 and the seed crystal cylinder 323 can be taken out from the heating barrel 201. Then pull the lifting shaft 309. When the positioning slot shaft 308 is inserted into the insertion hole 317, the second limiting ring 321 is in contact with the first rotating plate 202. At this time, silicon raw material and flux are fed into the second limiting ring 321 through the positioning groove 315, and the seed crystal is placed into the seed crystal cylinder 323. Then, the second rotating plate 311 is put back in its original position and rotated. The position of the second rotating plate 311 is limited by the first limiting ring 304. At this time, the seed crystal cylinder 323 is in contact with the bottom of the inner wall of the second limiting ring 321.

[0050] (II) Subsequently, the drive motor 413 starts, driving the second drive shaft 415 to move via the drive turntable 414. This, in turn, drives the moving rod 401 to slide back and forth along the inner wall of the moving groove 402 via the T-shaped rod 416. This, in turn, moves the air-blowing piston rod 406 and the air-evacuating piston rod 409, thereby simultaneously expelling air from the heating tank 201 through the air-evacuating piston rod 409 and sending inert gas from the air-blowing box 404 into the heating tank 201. After the drive motor 413 has been working for 15 minutes... The drive motor 413 stops working, and then the connecting block 410 is removed from the moving rod 401 and fixed to the upper top plate 102 by fastening bolts. After that, the drive motor 413 continues to work. At this time, the inert gas cannot flow out from the suction piston rod 409. The drive motor 413 stops working after working for 10 minutes. Then the temperature control device 419 is started. The temperature control device 419 heats the heating tank 201, thereby melting the raw material into a silicon-carbon mixed solution.

[0051] (iii) After heating for 10 minutes, the temperature inside the heating barrel 201 is adjusted by the temperature control device 419. At this time, single crystals are gradually precipitated on the surface of the seed crystal. Then, the lifting cylinder 302 drives the seed crystal barrel 323 to rise slowly, thereby achieving uniform distribution of single crystals on the outer surface of the seed crystal barrel 323.

[0052] (iv) After working for 20 minutes, the temperature control device 419 stops working, causing the temperature inside the heating barrel 201 and the holding barrel 312 to gradually decrease. After cooling for 25 minutes, the mounting barrel 310 is rotated, and the second rotating plate 311 drives the release block 316 to move, thereby aligning the release block 316 with the slot 314. At this time, the second rotating plate 311, the upper fixing plate 318, the mounting block 322 and the seed crystal barrel 323 can be removed from the heating barrel 201. Then, the positioning clamping plate 207 is moved away from the heating barrel 201. Then, the rotating handle 205 is rotated. When the first rotating plate 202 is in contact with the first positioning plate 208, the rotating handle 205 is stopped. At this time, the residual material in the second limiting ring 321 is discharged through the positioning groove 315.

[0053] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A manufacturing apparatus for producing silicon carbide single crystals, characterized in that, Includes a support frame on which a heating tank (201) is fixedly installed; The first rotating plate (202) is rotatably mounted on the heating barrel (201), and a positioning component is installed on it; The container (312) is located inside the heating tank (201) and is connected to the positioning assembly; The drive motor (413) has a reciprocating motion component connected to its output end; The blower rod (405) and the suction pipe (408) are both installed on the heating barrel (201) and are both connected to the heating barrel (201); The air supply and venting assembly is mounted on the support frame and connected to the reciprocating motion assembly.

2. The manufacturing apparatus for silicon carbide single crystal production according to claim 1, characterized in that, The positioning assembly includes a positioning clamping plate (207) that is slidably mounted on the lower side of the first rotating plate (202). The side of the positioning clamping plate (207) facing the heating barrel (201) is arc-shaped, and the radius of the arc-shaped side of the positioning clamping plate (207) is equal to the radius of the outer surface of the heating barrel (201). A first driving shaft (209) is fixedly mounted on the side of the positioning clamping plate (207) away from the heating barrel (201). The first driving shaft (209) is slidably connected to the first rotating plate (202).

3. The manufacturing apparatus for silicon carbide single crystal production according to claim 1, characterized in that, The positioning assembly also includes a first limiting ring (304) fixedly installed on the first rotating plate (202), the first limiting ring (304) is provided with a positioning groove (315), and the inner wall of the positioning groove (315) is provided with a slot (314); a second rotating plate (311) is rotatably installed on the first rotating plate (202), and a release block (316) is fixedly installed on the second rotating plate (311).

4. The manufacturing apparatus for silicon carbide single crystal production according to claim 3, characterized in that, The cross-sectional dimensions of the release block (316) are the same as those of the slot (314).

5. A manufacturing apparatus for producing silicon carbide single crystals according to claim 3, characterized in that, A lifting cylinder bracket (301) is fixedly installed on the second rotating plate (311), and a lifting cylinder (302) is fixedly installed on the lifting cylinder bracket (301). A second limiting ring (321) is fixedly installed on the telescopic end of the lifting cylinder (302). The second limiting ring (321) is coaxial with the container (312). Multiple seed crystal tubes (323) are fixedly installed on the side of the second limiting ring (321) facing the container (312). Each seed crystal tube (323) contains a seed crystal.

6. The manufacturing apparatus for silicon carbide single crystal production according to claim 3, characterized in that, A lifting shaft (309) is fixedly installed on the container (312). The lifting shaft (309) is slidably connected to the first rotating plate (202) and the first limiting ring (304) respectively. An insertion hole (317) is provided on the outer surface of the lifting shaft (309). A positioning clip shaft (308) is slidably connected to the outer surface of the lifting shaft (309). A second positioning block (305) is slidably installed on the outer surface of the positioning clip shaft (308). The second positioning block (305) is fixedly installed on the first rotating plate (202).

7. A manufacturing apparatus for producing silicon carbide single crystals according to claim 6, characterized in that, The end of the positioning pin (308) facing the lifting pin (309) is hemispherical. The radius of the hemispherical end of the lifting pin (309) is equal to the radius of the inner wall of the insertion hole (317). When the lifting pin (309) enters the inner wall of the insertion hole (317), the container (312) is in contact with the first rotating plate (202).

8. A manufacturing apparatus for producing silicon carbide single crystals according to claim 2, characterized in that, An air-blowing box (404) is fixedly installed on the support frame. The air-blowing box (404) is connected to the interior of the heating barrel (201). The air-blowing rod (405) is connected to the interior of the heating barrel (201) through the air-blowing box (404). The air supply and discharge assembly includes an air-blowing piston rod (406) that is slidably installed on the inner wall of the air-blowing rod (405) and an air-suction piston rod (409) that is slidably installed on the inner wall of the air-suction pipe (408). An air outlet pipe (407) is also installed on the outer surface of the air-suction pipe (408). The air outlet pipe (407) is connected to the interior of the heating barrel (201) through the air-suction pipe (408).

9. A manufacturing apparatus for producing silicon carbide single crystals according to claim 8, characterized in that, The reciprocating motion assembly includes a motion rod (401) slidably mounted on a support frame. The motion rod (401) is fixedly connected to the blower piston rod (406) and the suction piston rod (409) respectively. A drive turntable (414) is fixedly mounted on the output end of the drive motor (413). A second drive shaft (415) is fixedly mounted on the end of the drive turntable (414) away from the drive motor (413).

10. A manufacturing apparatus for producing silicon carbide single crystals according to claim 9, characterized in that, A T-shaped rod (416) is slidably mounted on the support frame. The T-shaped rod (416) is provided with a first sliding groove (417) and a second sliding groove (418). The second drive shaft (415) is slidably mounted on the inner wall of the first sliding groove (417), and the motion rod (401) is slidably mounted on the inner wall of the second sliding groove (418).

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