Guide cylinder and pressure container in monocrystalline silicon furnace cavity
By designing a multi-layered diversion cylinder structure in the single crystal silicon furnace cavity, the splashing problem caused by excessive argon erosion is solved, the quality of the crystal rod and the pulling speed are ensured, and a more uniform argon flow cooling is achieved.
Patent Information
- Application Number
- CN202323401698.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-14
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2033-12-14
AI Technical Summary
During the preparation of single crystal silicon, the traditional diversion cylinder causes too much argon to flush, affecting the oxygen concentration distribution and cooling speed on the surface of the crystal rod, causing the adhesion of the silicon liquid splashing liquid and impurities, and affecting the quality of the crystal rod.
Design a single crystal silicon furnace chamber in the flow tube, including the main flow cavity divided into three chambers: gradually shrinking and gradually enlarging, and an auxiliary flow cavity is set on it to form a spray structure to buffer the argon gas flow , avoid splashing, and replenish air flow through auxiliary diversion chamber to ensure cooling of the crystal rod surface.
Effectively reduce the erosion of the argon gas stream on the crystal rod, avoid splashing, ensure the pulling speed and mass of the crystal rod. Through the gradually increasing and weakening argon gas stream design, ensure sufficient argon gas stream to cool the surface of the crystal rod.
Smart Images
Figure CN222160459U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of flow guide tubes, in particular to a flow guide tube and a pressure vessel in a single crystal silicon furnace cavity. Background Art
[0002] In the process of preparing single crystal silicon by the Czochralski method, the thermal field of the single crystal furnace is mainly divided into components such as the furnace cavity, insulation device, heating device, graphite crucible and guide tube. The guide tube guides the flow of argon gas, affects the oxygen concentration distribution in the crystal, and thus plays a relatively large role in improving the quality of the crystal. At the same time, it plays a relatively important role in adjusting the temperature gradient in the thermal field to cool the surface of the crystal rod. The speed of cooling the surface of the crystal rod will affect the speed of pulling the crystal rod, and thus affect the output of the single crystal furnace.
[0003] In the prior art, the lower end of the guide tube is generally arranged parallel to the crystal rod to facilitate the argon gas to flush downward along the crystal rod to adjust the oxygen concentration distribution on the crystal rod. However, when the pressure of the argon gas flushing is too high, it will also affect the crystallization speed of the crystal rod surface, and also splash liquid on the silicon liquid surface, causing a small amount of impurities to adhere to the crystal rod, thereby affecting the quality of the crystal rod. Utility Model Content
[0004] In order to overcome the deficiencies of the prior art, one of the purposes of the present invention is to provide a guide tube in a single crystal silicon furnace chamber to solve the above-mentioned traditional problems.
[0005] The second purpose of the utility model is to provide a pressure vessel using the guide tube in the cavity of the single crystal silicon furnace.
[0006] One of the purposes of the utility model is achieved by the following technical solution:
[0007] A flow guide cylinder in a single crystal silicon furnace cavity comprises a cylinder body, wherein a main flow chamber in the middle and a plurality of auxiliary flow guide chambers arranged around the main flow chamber are arranged in the cylinder body, wherein the main flow chamber is divided into a first cavity, a second cavity and a third cavity from top to bottom, wherein the first cavity is gradually reduced in size from top to bottom, the second cavity is in the shape of a straight cylinder, and the third cavity is gradually increased in size from top to bottom; and the two ends of the auxiliary flow guide chamber respectively penetrate the top surface of the cylinder body and the lower end wall of the third cavity.
[0008] Preferably, the maximum diameter of the third cavity is between the maximum diameter and the minimum diameter of the first cavity, the length of the third cavity is smaller than the length of the second cavity, and the length of the second cavity is smaller than the length of the third cavity.
[0009] Preferably, the maximum diameter of the third cavity is 0.3-0.5 of the maximum diameter of the first cavity.
[0010] Preferably, the length of the third cavity is 0.6-0.8 of the length of the second cavity; the length of the second cavity is 0.3-0.5 of the length of the third cavity.
[0011] Preferably, the auxiliary guide cavity is configured to be gradually reduced from top to bottom.
[0012] Preferably, the inlet of the auxiliary flow guiding cavity is arranged in an elongated strip shape, and the outlet of the auxiliary flow guiding cavity is arranged in an elliptical or circular shape.
[0013] Preferably, the maximum diameter of the auxiliary guide cavity is 1.2-1.5 of the minimum diameter of the auxiliary guide cavity.
[0014] Preferably, the bottom of the cylinder body is also provided with an upwardly inclined wind-shielding surface, and the inclination of the wind-shielding surface is 30°-45°.
[0015] Preferably, a support ring is protruding outwardly from the top of the barrel body, and the support ring is used to be fixed in the single crystal silicon furnace cavity.
[0016] The second purpose of the utility model is achieved by the following technical solution:
[0017] A pressure vessel, which is one of a single crystal silicon furnace, a double crystal silicon furnace, and a sapphire furnace, and the pressure vessel comprises the above-mentioned guide tube in the cavity of the single crystal silicon furnace.
[0018] Compared with the prior art, the beneficial effects of the present invention are:
[0019] The guide tube in the chamber of a single crystal silicon furnace of the utility model divides a main guide chamber into a first chamber, a second chamber and a third chamber, so that the argon gas flow can gradually increase along the main guide chamber and gradually weaken toward the tail end, so as to weaken the scouring of the crystal rod by the tail end and avoid the argon gas flow scouring onto the silicon liquid surface and causing liquid splashing. On the basis of the main guide chamber, an auxiliary guide chamber is additionally provided, and the argon gas flow in the auxiliary guide chamber supplements the gas flow weakened by the main guide chamber, so as to ensure that there is sufficient argon gas flow to cool the surface of the crystal rod, thereby ensuring the drawing speed and quality of the crystal rod. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a three-dimensional structural schematic diagram of the guide tube of the utility model;
[0021] Figure 2 for Figure 1 A partial cross-sectional view of the guide tube is shown.
[0022] In the figure: 10, cylinder body; 11, main flow chamber; 110, first chamber; 111, second chamber; 112, third chamber; 12, auxiliary flow chamber; 13, windproof surface; 20, support ring. DETAILED DESCRIPTION
[0023] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.
[0024] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0025] In the description of the present utility model, it is necessary to understand that when an element is considered to be "connected" to another element, it may be directly connected to another element or there may be intermediate elements at the same time. On the contrary, when an element is said to be "directly" connected to another element, there are no intermediate elements.
[0026] See also Figure 1 and Figure 2 , which is a guide tube of a preferred embodiment of the utility model, is used to be installed in a single crystal silicon furnace cavity to guide the argon gas in the furnace cavity. Specifically, the guide tube includes a tube body 10, and the tube body 10 is provided with a main guide cavity 11 in the middle and a plurality of auxiliary guide cavities 12 arranged around the main guide cavity 11. The main guide cavity 11 is divided into a first cavity 110, a second cavity 111 and a third cavity 112 from top to bottom. The first cavity 110 is gradually reduced from top to bottom, the second cavity 111 is roughly in the shape of a straight cylinder, and the third cavity 112 is gradually increased from top to bottom; the two ends of the auxiliary guide cavity 12 respectively pass through the top surface of the tube body 10 and the lower end wall of the third cavity 112.
[0027] The guide tube divides the main guide cavity 11 into a first cavity 110, a second cavity 111 and a third cavity 112, so that the argon gas flow can gradually increase along the main guide cavity 11 and gradually weaken at the tail end, so as to weaken the scouring of the crystal rod by the tail end and avoid the argon gas flow scouring to the silicon liquid surface and splashing. On the basis of the main guide cavity 11, an auxiliary guide cavity 12 is additionally provided, and the argon gas flow in the auxiliary guide cavity 12 supplements the gas flow weakened by the main guide cavity 11, so as to ensure that there is sufficient argon gas flow to cool the surface of the crystal rod, thereby ensuring the drawing speed and quality of the crystal rod.
[0028] In this embodiment, the maximum diameter of the third cavity 112 is between the maximum diameter and the minimum diameter of the first cavity 110, the length of the third cavity 112 is less than the length of the second cavity 111, and the length of the second cavity 111 is less than the length of the third cavity 112. It can be understood that by combining the three cavities, a structure with injection can be formed, and the crystal rod can be gently purged after the rear end buffer. In one embodiment, the maximum diameter of the third cavity 112 is 0.3-0.5 of the maximum diameter of the first cavity 110. The length of the third cavity 112 is 0.6-0.8 of the length of the second cavity 111; the length of the second cavity 111 is 0.3-0.5 of the length of the third cavity 112.
[0029] Optionally, the auxiliary flow guide cavity 12 is gradually reduced from top to bottom. It can be understood that the auxiliary flow guide cavity 12 is also a sprayable structure to cooperate with the main flow guide cavity 11 to purge the crystal rod. Specifically, the inlet of the auxiliary flow guide cavity 12 is roughly arranged in a long strip shape, and the outlet of the auxiliary flow guide cavity 12 is roughly arranged in an elliptical or circular shape. The number of the auxiliary flow guide cavity 12 can be 2, 3, or 4. The inlet of the auxiliary flow guide cavity 12 can be determined according to the wind force of the main flow guide cavity 11, and the specific size is not limited here. The outlet of the auxiliary flow guide cavity 12 can be set according to the wall size of the third cavity 112. In this embodiment, the maximum diameter of the auxiliary flow guide cavity 12 is 1.2-1.5 of the minimum diameter of the auxiliary flow guide cavity 12.
[0030] In another embodiment, the bottom of the cylinder body 10 is further provided with an upwardly inclined wind-shielding surface 13, and the inclination of the wind-shielding surface 13 is 30°-45°, which can facilitate the outflow of air.
[0031] In this embodiment, a support ring 20 is protruding outward from the top of the barrel body 10, and the support ring 20 is used to be fixed in the cavity of the single crystal silicon furnace.
[0032] In the above embodiments, the guide tube is made of high temperature resistant material, such as quartz material.
[0033] In other embodiments, the utility model further provides a pressure vessel, which is one of a single crystal silicon furnace, a double crystal silicon furnace, and a sapphire furnace. The pressure vessel includes the above-mentioned guide tube, and the quality of the crystal rod is improved through the function of the guide tube.
[0034] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0035] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.
Claims
1. A guide tube in a single crystal silicon furnace cavity, characterized in that: The utility model comprises a cylinder body, wherein a main flow chamber in the middle and a plurality of auxiliary flow chambers arranged around the main flow chamber are arranged in the cylinder body, wherein the main flow chamber is divided into a first chamber, a second chamber and a third chamber from top to bottom, wherein the first chamber is gradually reduced in size from top to bottom, the second chamber is in the shape of a straight cylinder, and the third chamber is gradually increased in size from top to bottom; and the two ends of the auxiliary flow chamber respectively penetrate the top surface of the cylinder body and the lower end wall surface of the third chamber.
2. The flow guide tube in the single crystal silicon furnace cavity according to claim 1, characterized in that: The maximum diameter of the third cavity is between the maximum diameter and the minimum diameter of the first cavity, the length of the third cavity is smaller than the length of the second cavity, and the length of the second cavity is smaller than the length of the third cavity.
3. The flow guide tube in the single crystal silicon furnace cavity according to claim 2, characterized in that: The maximum diameter of the third cavity is 0.3-0.5 of the maximum diameter of the first cavity.
4. The flow guide tube in the single crystal silicon furnace cavity according to claim 2, characterized in that: The length of the third cavity is 0.6-0.8 of the length of the second cavity; the length of the second cavity is 0.3-0.5 of the length of the third cavity.
5. The flow guide tube in the single crystal silicon furnace cavity according to claim 1, characterized in that: The auxiliary flow guiding cavity is gradually reduced in size from top to bottom.
6. The flow guide tube in the single crystal silicon furnace cavity according to claim 5, characterized in that: The inlet of the auxiliary flow guiding cavity is arranged in a long strip shape, and the outlet of the auxiliary flow guiding cavity is arranged in an elliptical or circular shape.
7. The flow guide tube in the cavity of a single crystal silicon furnace according to claim 5, characterized in that: The maximum diameter of the auxiliary guide cavity is 1.2-1.5 of the minimum diameter of the auxiliary guide cavity.
8. The flow guide tube in the single crystal silicon furnace cavity according to claim 1, characterized in that: The bottom of the cylinder body is also provided with an upwardly inclined wind-shielding surface, and the inclination of the wind-shielding surface is 30°-45°.
9. The flow guide tube in the single crystal silicon furnace cavity according to claim 1, characterized in that: A support ring is protruding outwardly from the top of the barrel body, and the support ring is used to be fixed in the single crystal silicon furnace cavity.
10. A pressure vessel, the pressure vessel being one of a single crystal silicon furnace, a double crystal silicon furnace, and a sapphire furnace, characterized in that: The pressure vessel comprises a flow guide tube in the single crystal silicon furnace cavity as described in any one of claims 1 to 9.