Epitaxial process device
By using fill light groups in the epitaxial process device to infrared irradiate the edge area of the silicon wafer, the problem of low edge temperature of the silicon wafer is solved, precise regulation of film growth thickness and film thickness uniformity are achieved, and the product quality is improved Rate.
Patent Information
- Application Number
- CN202323395219.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-12
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2033-12-12
AI Technical Summary
The existing epitaxial process devices have a low temperature at the edge of the silicon wafer, resulting in uneven film growth thickness, which is difficult to accurately regulate and affect product yield.
An epitaxial process device is designed, including a closed reaction chamber, a fill light group and a load-bearing base, and temperature difference compensation is improved by infrared irradiation on the edge of the silicon wafer to improve temperature field uniformity.
The precise regulation of the film growth thickness in the edge area of the silicon wafer is achieved, the film thickness uniformity is improved, and the product yield is improved.
Smart Images
Figure CN222226647U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor equipment, in particular to an epitaxial process device. Background Art
[0002] The thickness of the epitaxial thin film growth is mainly determined by the temperature field, gas flow field and process time, and is relatively strongly correlated with the temperature field and relatively weakly correlated with the gas flow field. Since the heating lamp group in the prior art is distributed in a ring shape, the light received by the edge of the silicon wafer during the epitaxial process is insufficient, so the temperature at the edge of the silicon wafer will be low, and the thickness of the thin film growth at the edge of the silicon wafer will also be reduced, resulting in insufficient uniformity of thin film growth on the silicon wafer, thereby affecting the yield of the product.
[0003] At present, the main method to improve the low temperature at the edge of the silicon wafer is to add an auxiliary gas flow field on the side, that is, to add an X-Flow gas flow field with adjustable flow at 90° to the side of the mainstream field. Since the silicon wafer is in a state of uniform rotation during the process, the film thickness in the edge area of the silicon wafer will increase with the increase of the lateral gas flow. Although this design can increase the thickness of the film in the edge area of the silicon wafer, due to the diffusion of the gas, the thickness of the film growth in the middle area will also increase after adding the lateral gas flow. The increase in the thickness of the middle area of the silicon wafer is not a process requirement, and sometimes it will bring other risks, such as excessive film growth thickness, which will lead to a decrease in product yield. Therefore, although the lateral gas flow field can increase the thickness of the film growth in the edge area of the silicon wafer, it is difficult to achieve precise control only for the edge area of the silicon wafer.
[0004] Therefore, it is necessary to provide an epitaxial process device to solve the above problems existing in the prior art. Summary of the invention
[0005] The utility model aims to provide an epitaxial process device to solve the problem that the existing device is difficult to accurately control the thickness of the thin film growth in the edge area of the silicon wafer.
[0006] To achieve the above-mentioned purpose, the utility model provides an epitaxial process device, including a closed reaction chamber, a fill light group connected to the inner wall of the closed reaction chamber, and a supporting base and a base support member arranged in sequence below the fill light group, wherein the fill light group is used to provide temperature difference compensation for the edge area of the silicon wafer on the supporting base.
[0007] The beneficial effect of the epitaxial process device described in the utility model is that by arranging a fill light group above the supporting base to uniformly irradiate the edge area of the silicon wafer with infrared, the edge area of the silicon wafer can be compensated for the temperature difference, and ultimately the film thickness uniformity of the epitaxial process is improved. Therefore, the epitaxial process device of the present invention can accurately control the thickness of the thin film growth in the edge area of the silicon wafer.
[0008] Optionally, the fill light group includes N fill light lamps, and the N fill light lamps are arranged in a ring in the closed reaction chamber, and N is a positive integer greater than or equal to 1. The beneficial effect is that the edge area of the silicon wafer can be uniformly filled with light.
[0009] Optionally, the fill light is in the shape of an arc-shaped structure, and the arc-shaped structure protrudes along the radial direction of the closed reaction chamber in a direction away from the central axis of the closed reaction chamber.
[0010] Optionally, a lampshade is provided above the fill light to control the illumination range of the fill light.
[0011] Optionally, the illumination range of the fill light on the silicon wafer is annular, and the difference between the outer diameter of the ring and the inner diameter of the ring is 0-50 mm. The beneficial effect is that only the edge area of the silicon wafer can be filled with light, so that the thickness of the entire film meets the process requirements.
[0012] Optionally, the epitaxial process device further includes a first quartz seal and a second quartz seal, the first quartz seal and the second quartz seal enclose a first sealed cavity, and the supporting base is disposed in the first sealed cavity.
[0013] Optionally, the vertical distance between the bottom of the fill light group and the upper surface of the first quartz seal is 20-30 cm. The beneficial effect is that the fill light group will not block the light of the first heating lamp group, so that the first heating lamp group can provide a sufficient temperature field for the middle area of the silicon wafer.
[0014] Optionally, the epitaxial process device further comprises a heating lamp group, wherein the heating lamp group is connected to the inner wall of the closed reaction chamber to provide temperature for the silicon wafer.
[0015] Optionally, the heating lamp group includes a first heating lamp group, a second heating lamp group and a third heating lamp group, the first heating lamp group is located above the fill light group, the second heating lamp group is located below the supporting base, and the third heating lamp group is located below the second heating lamp group.
[0016] Optionally, the epitaxial process device further includes a gas input pipeline and a gas output pipeline, wherein the gas input pipeline is connected to the first sealed cavity for delivering gas into the first sealed cavity, and the gas output pipeline is connected to the first sealed cavity for releasing the gas in the first sealed cavity.
[0017] The beneficial effects of the utility model are as follows:
[0018] 1. Adding a fill light group can effectively improve the uniformity of the thin film in the epitaxial process with minimal changes to the original chamber structure, and the fill light group will not block the heating of the silicon wafer by the original heating lamp group, so the fill light group has little effect on the heat supply of the original heating lamp group.
[0019] 2. The power of the fill light group is adjustable, which can ensure that the temperature of the edge area of the silicon wafer is increased by 0-3 degrees Celsius, thereby effectively supplementing the lack of temperature field in the edge area of the silicon wafer, making the distribution of the temperature field at the edge of the silicon wafer as uniform as possible, and ultimately improving the uniformity of the film thickness in the edge area of the silicon wafer.
[0020] 3. The lampshade controls the lighting angle so that the heat field can be supplemented within the range of 100-150mm of the outermost circle of the silicon wafer. The range can be adjusted according to different process requirements. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a schematic diagram of the overall structure of the epitaxial process device of an embodiment of the utility model;
[0022] Figure 2 This is a schematic diagram of the structure of the fill light assembly of an embodiment of the utility model;
[0023] Figure 3 It is a schematic diagram of the irradiation range of the fill light on the silicon wafer according to an embodiment of the utility model. DETAILED DESCRIPTION
[0024] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
[0025] The present invention aims to improve the controllability of the temperature field at the edge of the silicon wafer and further improve the uniformity of thin film growth by modifying the chamber structure of the existing epitaxial process device with minimal changes by adding a supplementary light group.
[0026] The present invention provides an epitaxial process device, referring to Figure 1 The epitaxial process device 100 includes a closed reaction chamber 1, a fill light group 3 connected to the inner wall of the closed reaction chamber 1, and a supporting base 5 and a base support 6 sequentially arranged below the fill light group 3. The fill light group 3 is used to provide temperature difference compensation for the edge area of the silicon wafer on the supporting base 5. Specifically, by arranging the fill light group above the supporting base to perform uniform infrared irradiation on the edge area of the silicon wafer, the temperature difference compensation can be performed on the edge area of the silicon wafer, and finally the uniformity of the film thickness of the epitaxial process is improved. Therefore, the epitaxial process device of the present invention can accurately control the thickness of the thin film growth in the edge area of the silicon wafer.
[0027] Some specific embodiments of the present invention refer to Figure 1 The carrying base 5 is connected to the base support 6, and the base support 6 is connected to the control component (not shown in the figure) through the second quartz seal 42 and the bottom wall of the closed reaction chamber 1. The control component (not shown in the figure) controls the rotation of the base support 6 to drive the rotation of the carrying base 5, so that the silicon wafer on the carrying base 5 rotates and is coated.
[0028] In some embodiments of the present invention, the fill light group includes N fill lights, and the N fill lights are arranged in a ring in the closed reaction chamber, and N is a positive integer greater than or equal to 1. Specifically, the N fill lights can be arranged on the same horizontal plane or on different horizontal planes. The spacing between two adjacent fill lights among the N fill lights can be adjusted according to the actual application scenario, which is not limited here. The edge area of the silicon wafer can be uniformly filled with light.
[0029] In some embodiments of the present invention, the fill light is in the shape of an arc structure, and the arc structure protrudes in a radial direction of the closed reaction chamber away from the central axis of the closed reaction chamber. Figure 1 and Figure 2The fill light group 3 includes a first fill light 31, a second fill light 32, a third fill light 33 and a fourth fill light 34. The first fill light 31 and the third fill light 33 are symmetrically arranged on the inner wall of the closed reaction chamber 1. The second fill light 32 and the fourth fill light 34 are symmetrically arranged on the inner wall of the closed reaction chamber 1. The first fill light 31, the second fill light 32, the third fill light 33 and the fourth fill light 34 are all in an arc shape. For some specific embodiments, refer to Figure 1 and Figure 2 The first fill light 31, the second fill light 32, the third fill light 33 and the fourth fill light 34 are all connected to the inner wall of the closed reaction chamber 1, and are arranged in a circle on the same horizontal plane. The spacing between adjacent fill lights among the first fill light 31, the second fill light 32, the third fill light 33 and the fourth fill light 34 can be adjusted according to the actual application scenario and is not limited here.
[0030] Some embodiments of the present invention refer to Figure 1 A lampshade 35 is disposed above the fill light group 3, and the lampshade 35 is used to control the illumination range of the fill light on the silicon wafer.
[0031] Some embodiments of the present invention refer to Figure 3 The illumination range 91 of the fill light on the silicon wafer is annular, and the difference between the outer diameter of the annular shape and the inner diameter of the annular shape is 0-50 mm. Figure 1 and Figure 3 The range on the silicon wafer 9 illuminated by the fill light group 3 is called the illuminated range 91, and the range on the silicon wafer 9 not illuminated by the fill light group 3 is called the non-illuminated range 92. The illuminated range 91 is annular, and the difference between the outer diameter of the ring and the inner diameter of the ring is L1. The radius of the non-illuminated range 92 is L2. The radius of the silicon wafer is L, and the difference between the outer diameter of the ring and the inner diameter of the ring L1 is the radius L of the silicon wafer minus the radius L2 of the non-illuminated range, that is, L1=L-L2.
[0032] Some embodiments of the present invention refer to Figure 1 The epitaxial process device further comprises a first quartz seal 41 and a second quartz seal 42, wherein the first quartz seal 41 and the second quartz seal 42 enclose a first sealed cavity 8, and the supporting base 5 is disposed in the first sealed cavity 8. Figure 1 Part of the base support 6 is arranged inside the first sealed cavity 8, part of the base support 6 is arranged inside the closed reaction chamber 1, and part of the base support 6 is arranged outside the closed reaction chamber 1.
[0033] Some embodiments of the present invention refer to Figure 1 , the vertical distance between the bottom of the fill light group 3 and the upper surface of the first quartz seal 41 is h, that is, the vertical distance h is 20-30cm; optionally, the vertical distance h between the bottom of the fill light group 3 and the upper surface of the first quartz seal 41 is any one of 20cm, 21cm, 22cm, 23cm, 24cm, 25cm, 26cm, 27cm, 28cm, 29cm and 30cm.
[0034] Some embodiments of the present invention refer to Figure 1 The epitaxial process device 100 also includes a heating lamp group (not marked in the figure), which is connected to the inner wall of the closed reaction chamber 1 to provide temperature for the silicon wafer.
[0035] Some embodiments of the present invention refer to Figure 1 The heating lamp group (not marked in the figure) includes a first heating lamp group 21, a second heating lamp group 22 and a third heating lamp group 23. The first heating lamp group 21 is located above the fill light group 3, the second heating lamp group 22 is located below the supporting base 5, and the third heating lamp group 23 is located below the second heating lamp group 22. The number of bulbs in the first heating lamp group 21, the second heating lamp group 22 and the third heating lamp group 23 can be adjusted according to the actual application scenario and is not limited here. Specifically, refer to Figure 3 The first heating lamp group 21 includes 12 bulbs, the 12 bulbs are arranged on the same horizontal plane and the 12 bulbs are arranged in a circle, and the distance between two adjacent bulbs among the 12 bulbs can be adjusted according to the actual application scenario, which is not limited here; the second heating lamp group 22 includes 20 bulbs, the 20 bulbs are arranged on the same horizontal plane and the 20 bulbs are arranged in a circle, and the distance between two adjacent bulbs among the 20 bulbs can be adjusted according to the actual application scenario, which is not limited here; the third heating lamp group 23 includes 32 bulbs, the 32 bulbs are arranged on the same horizontal plane and the 32 bulbs are arranged in a circle, and the distance between two adjacent bulbs among the 32 bulbs can be adjusted according to the actual application scenario, which is not limited here.
[0036] Some embodiments of the present invention refer to Figure 1 The distance between the fill light group 3 and the first heating lamp group 21 can be adjusted according to the actual application scenario and is not limited here. In some specific embodiments, the fill light group 3 does not block the light of the first heating lamp group 21, so that the first heating lamp group 21 can provide a sufficient temperature field for the middle area of the silicon wafer.
[0037] Some embodiments of the present invention refer to Figure 1 The epitaxial process device 100 also includes a gas input pipeline 71 and a gas output pipeline 72. The gas input pipeline 71 is connected to the first sealed cavity 8 for conveying gas into the first sealed cavity 8, and the gas output pipeline 72 is connected to the first sealed cavity 8 for discharging gas in the first sealed cavity 8.
[0038] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.
Claims
1. An epitaxial process device, characterized in that: It includes a closed reaction chamber, a fill light group connected to the inner wall of the closed reaction chamber, and a supporting base and a base support arranged in sequence below the fill light group. The fill light group is used to provide temperature difference compensation for the edge area of the silicon wafer on the supporting base.
2. The epitaxial process device according to claim 1, characterized in that: The fill light group includes N fill light lamps, and the N fill light lamps are arranged in a ring shape in the closed reaction chamber, and N is a positive integer greater than or equal to 1.
3. The epitaxial process device according to claim 2, characterized in that: The fill light is in the shape of an arc structure, and the arc structure protrudes along the radial direction of the closed reaction chamber in a direction away from the central axis of the closed reaction chamber.
4. The epitaxial process device according to claim 2, characterized in that: A lampshade is arranged above the fill light to control the illumination range of the fill light.
5. The epitaxial process device according to claim 4, characterized in that: The irradiation range of the fill light on the silicon wafer is ring-shaped, and the difference between the outer diameter of the ring and the inner diameter of the ring is 0-50mm.
6. The epitaxial process device according to claim 1, characterized in that: It also includes a first quartz seal and a second quartz seal. The first quartz seal and the second quartz seal form a first sealed cavity. The bearing base is disposed in the first sealed cavity.
7. The epitaxial process device according to claim 6, characterized in that: The vertical distance between the bottom of the fill light group and the upper surface of the first quartz seal is 20-30 cm.
8. The epitaxial process device according to claim 1, characterized in that: It also includes a heating lamp group, which is connected to the inner wall of the closed reaction chamber to provide temperature for the silicon wafer.
9. The epitaxial process device according to claim 8, characterized in that: The heating lamp group includes a first heating lamp group, a second heating lamp group and a third heating lamp group. The first heating lamp group is located above the fill light group, the second heating lamp group is located below the supporting base, and the third heating lamp group is located below the second heating lamp group.
10. The epitaxial process device according to claim 6, characterized in that: It also includes a gas input pipeline and a gas output pipeline. The gas input pipeline is connected to the first sealed cavity for conveying gas into the first sealed cavity, and the gas output pipeline is connected to the first sealed cavity for discharging gas in the first sealed cavity.