Semiconductor process chamber and semiconductor process equipment

Abstract

The embodiment of the utility model provides a semiconductor process chamber and semiconductor process equipment, and the semiconductor process chamber comprises a chamber outer wall which is provided with a plasma discharge chamber; the cavity outer wall is arranged outside the plasma discharge cavity in a surrounding manner, a first through hole is formed in the cavity outer wall, a first light guide column for blocking the first through hole is arranged in the first through hole, the first light guide column is used for transmitting light in the plasma discharge cavity, and a condensing lens is arranged on one side, deviating from the semiconductor process cavity, of the first light guide column. The semiconductor process chamber can determine the build-up state based on the glow of the plasma discharge chamber.

Description

Technical Field

[0001] The present application relates to the field of semiconductor process technology, and in particular to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] In the engineering of implementing semiconductor process, it is sometimes necessary to detect the ignition state of plasma discharge chamber. In the related art, the ignition state of plasma discharge chamber is generally indirectly judged by monitoring the power of radio frequency electrode. Since the ignition time of plasma discharge chamber is short, the ignition time is several hundred milliseconds, and the sampling interval of radio frequency electrode monitoring device is generally greater than or equal to two hundred milliseconds. Therefore, in one ignition period, only a few signal values ​​can be recorded. Therefore, the signal monitored by radio frequency electrode monitoring device cannot accurately reflect the ignition state of plasma discharge chamber. Utility Model Content

[0003] The embodiments of the present application provide a semiconductor process chamber and semiconductor process equipment to solve the problems in the background technology.

[0004] In a first aspect, an embodiment of the present application provides a semiconductor process chamber.

[0005] The semiconductor process chamber provided in the embodiment of the present application includes: a chamber outer wall, the semiconductor process chamber is provided with a plasma discharge chamber; the chamber outer wall is arranged outside the plasma discharge chamber, the chamber outer wall is provided with a first through hole, a first light guide column is provided in the first through hole to block the first through hole, the first light guide column is used to transmit light in the plasma discharge chamber, and a focusing lens is provided on the side of the first light guide column facing away from the semiconductor process chamber.

[0006] Optionally, a metal shielding mesh is provided on a side of the focusing lens facing away from the plasma discharge chamber.

[0007] Optionally, the semiconductor process chamber includes an upper electrode, a lower electrode and an isolation ring; the isolation ring is arranged on the periphery of the lower electrode, the plasma discharge chamber is surrounded by the upper electrode, the isolation ring and the lower electrode, and a second light-transmitting portion is provided at a portion of the isolation ring opposite to the first through hole, and the second light-transmitting portion is used to transmit light in the plasma discharge chamber.

[0008] Optionally, a second through hole is provided in a portion of the isolation ring located at the second light-transmissive portion, and a second light guide column is provided in the second through hole to block the second through hole.

[0009] Optionally, the semiconductor process chamber also includes an insulating ring, which is arranged outside the upper electrode, the insulating ring is supported on the top of the outer wall of the chamber, the upper electrode is supported on the insulating ring, the insulating ring and the upper electrode cover the outer wall of the chamber, and the isolation ring is located below the insulating ring.

[0010] Optionally, the semiconductor process chamber is a capacitively coupled plasma process chamber, and the upper electrode of the semiconductor process chamber includes a spray plate.

[0011] In a second aspect, an embodiment of the present application provides a semiconductor process equipment.

[0012] The semiconductor process equipment provided in the embodiment of the present application includes: a light detection device and any one of the semiconductor process chambers provided in the embodiment of the present application; the light detection device is arranged outside the outer wall of the chamber, the detection surface of the light detection device faces the focusing lens, and the light detection device is used to detect glow parameters.

[0013] Optionally, the light detection device includes a camera.

[0014] Optionally, the semiconductor process equipment further comprises a voltage monitoring device, wherein the voltage monitoring device is electrically connected to a surface of an upper electrode of the semiconductor process chamber that faces away from the plasma discharge chamber.

[0015] Optionally, the semiconductor process equipment further comprises a cooling device, wherein the cooling device is arranged on an outer surface of the voltage monitoring device, and the cooling device is used to dissipate heat from the voltage monitoring device.

[0016] Optionally, the voltage monitoring device is arranged close to the upper electrode, and the voltage monitoring device includes a first voltage sensor and a second voltage sensor, the first voltage sensor is used to collect the voltage of the upper electrode to the ground, and the second voltage sensor is used to collect the surface DC bias of the upper electrode; the semiconductor process equipment also includes a controller, and the controller is electrically connected to the first voltage sensor, the second voltage sensor and the light detection device to receive the voltage of the upper electrode to the ground, the surface DC bias of the upper electrode and the glow parameters.

[0017] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects:

[0018] In the embodiment of the present application, the glow in the plasma discharge chamber can be transmitted to the outside of the chamber outer wall through the first light guide column and the focusing lens. Thus, the color temperature and / or light intensity and other parameters of the glow can be detected. Furthermore, the ignition state of the plasma discharge chamber can be judged based on the color temperature and / or light intensity and other parameters of the glow, which can improve the accuracy of determining the ignition state of the plasma discharge chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 A schematic diagram of a semiconductor process equipment provided by an embodiment of the present application;

[0021] Figure 2 for Figure 1 A partial schematic diagram of a semiconductor process equipment shown in FIG.

[0022] Figure 3 A schematic diagram of an isolation ring provided in an embodiment of the present application;

[0023] Figure 4 A partial schematic diagram of a semiconductor process chamber provided in an embodiment of the present application, located at the position of a metal shielding net.

[0024] Description of reference numerals:

[0025] 100-Semiconductor process equipment;

[0026] 110-semiconductor process chamber; 111-outer wall of the chamber; 1111-first perforation; 1112-first light guide column; 1113-focusing lens; 1114-metal shielding net; 112-plasma discharge chamber; 1121-second light-transmitting portion; 1122-second light guide column; 113-upper electrode; 114-lower electrode; 115-isolation ring; 116-insulating ring; 120-light detection device;

[0027] 130-voltage monitoring device;

[0028] 140-RF power supply; 141-matching device;

[0029] 150-gas pipeline; 151-ceramic block;

[0030] 160-Controller. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0032] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0033] In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article.

[0034] Furthermore, it is required that the present application be understood not only by the actual terms used but also by the meanings connoted by each term.

[0035] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0036] The present application embodiment provides a semiconductor process chamber. Figures 1 to 4 The semiconductor process chamber 110 provided in the embodiment of the present application includes: a chamber outer wall 111. The semiconductor process chamber 110 is provided with a plasma discharge chamber 112.

[0037] The chamber outer wall 111 is arranged outside the plasma discharge chamber 112. The chamber outer wall 111 is provided with a first through hole 1111, and a first light guide column 1112 is provided in the first through hole 1111 to block the first through hole 1111. The first light guide column 1112 is used to transmit the light in the plasma discharge chamber 112. A focusing lens 1113 is provided on the side of the first light guide column 1112 away from the semiconductor process chamber 110. The focusing lens 1113 is used to increase the amount of light directed to the light detection device 120.

[0038] In this way, in the embodiment of the present application, the glow in the plasma discharge chamber 112 can be transmitted to the outside of the chamber outer wall 111 through the first light guide column 1112 and the focusing lens 1113. Thus, the color temperature and / or light intensity and other parameters of the glow can be detected. Furthermore, the ignition state of the plasma discharge chamber 112 can be determined based on the color temperature and / or light intensity and other parameters of the glow, which can improve the accuracy of determining the ignition state of the plasma discharge chamber 112.

[0039] It should be noted that, in some embodiments, the intensity range of the glow when the plasma discharge chamber 112 is normally ignited can be determined by experiment. Furthermore, the light detection device 120 can be used to detect the intensity of the glow, so as to determine whether the intensity of the glow is within the intensity range corresponding to normal ignition. In this way, the ignition state of the plasma discharge chamber 112 can be determined. In addition, by adopting the solution provided in the embodiment of the present application, after the plasma is ignited, the stability of the plasma can also be judged based on parameters such as the color temperature and / or intensity of the glow.

[0040] refer to Figure 4 In some embodiments, a metal shielding net 1114 is provided on the side of the focusing lens 1113 facing away from the plasma discharge chamber 112. Exemplarily, the outer ring of the metal shielding net 1114 is fixed to the chamber outer wall 111 by metal threaded fasteners, which can achieve a good grounding effect. Exemplarily, the metal shielding net 1114 is arranged in a square mesh, for example, the side length of the square is less than or equal to 2 mm. This can effectively prevent the electromagnetic waves of the semiconductor process chamber 110 from propagating to the outside of the semiconductor process chamber 110 through the first perforation 1111. The metal shielding net 1114 is aligned with the plasma reaction area in the plasma discharge chamber 112, and the glow in the plasma discharge chamber 112 can be transmitted through the metal shielding net 1114 to the outside of the chamber outer wall 111.

[0041] refer to Figure 1 In some embodiments, the semiconductor process chamber 110 includes an upper electrode 113, a lower electrode 114 and an isolation ring 115. The isolation ring 115 is disposed around the outer periphery of the lower electrode 114, and a plasma discharge chamber 112 is surrounded by the upper electrode 113, the isolation ring 115 and the lower electrode 114.

[0042] In some embodiments, a second light-transmitting portion 1121 is provided at a portion of the isolation ring 115 opposite to the first through hole 1111, and the second light-transmitting portion 1121 is used to transmit light in the plasma discharge chamber 112. Exemplarily, a second through hole is provided at a portion of the isolation ring 115 located at the second light-transmitting portion 1121, and a second light-guiding column 1122 is provided in the second through hole to block the second through hole.

[0043] Exemplarily, both the first light guide column 1112 and the second light guide column 1122 can be sapphire glass lenses. The first light guide column 1112 disposed in the first perforation forms a first light-transmitting portion on the chamber outer wall 111, and the second light guide column 1122 disposed in the second perforation forms a second light-transmitting portion 1121 on the isolation ring 115. The glow in the plasma discharge chamber 112 can pass through the second light-transmitting portion 1121 and the first light-transmitting portion in sequence and then be transmitted to the outside of the chamber outer wall 111.

[0044] It should be noted that in some embodiments, when the periphery of the plasma discharge chamber 112 does not include the isolation ring 115, the glow in the plasma discharge chamber 112 can be directly emitted through the first light-transmitting portion of the chamber outer wall 111, so the second light-transmitting portion 1121 may not be provided.

[0045] refer to Figure 1 and Figure 2 In some embodiments, the semiconductor process chamber 110 further includes an insulating ring 116. The insulating ring 116 is wound around the upper electrode 113, the insulating ring 116 is carried on the top of the chamber outer wall 111, the upper electrode 113 is carried on the insulating ring 116, the insulating ring 116 and the upper electrode 113 cover the chamber outer wall 111, and the isolation ring 115 is located below the insulating ring 116. Exemplarily, the isolation ring 115 may be connected to the insulating ring 116, or the isolation ring 115 may be connected to the chamber outer wall 111.

[0046] In some embodiments, the semiconductor process chamber 110 is a capacitively coupled plasma (CCP) process chamber, and the upper electrode 113 includes a showerhead. In the process of implementing the semiconductor process, the showerhead can supply process gas to the plasma discharge chamber 112 more evenly. It should be noted that the solution provided in the embodiment of the present application for determining the ignition state of the plasma discharge chamber 112 based on the glow in the plasma discharge chamber 112 can also be applied to other semiconductor process chambers provided with the plasma discharge chamber 112, which will not be further described here.

[0047] The present application embodiment provides a semiconductor process equipment. Figure 1 and Figure 2 The semiconductor process equipment 100 provided in the embodiment of the present application includes: a light detection device 120 and any semiconductor process chamber 110 provided in the embodiment of the present application. The light detection device 120 is arranged outside the outer wall 111 of the chamber, and the detection surface of the light detection device 120 faces the focusing lens 1113. The light detection device 120 is used to detect the glow parameters.

[0048] In some embodiments, the light detection device 120 includes a camera. Exemplarily, the light detection device 120 can obtain an image in the plasma discharge chamber 112, and can display the image on a display device. On-site staff can judge the glow state of the plasma discharge chamber 112 by watching the image displayed on the display device. In addition, the camera can be used to obtain the image in the plasma discharge chamber 112, so that various parameters of the glow can be determined based on the image analysis method. It should be noted that the determination of parameters such as the color temperature and / or light intensity of the light based on the image analysis method can refer to the existing technology, and its principle will not be described in detail here.

[0049] It should also be noted that those skilled in the art may also determine the ignition state of the plasma discharge chamber 112 based on other principles in combination with the data detected by the light detection device 120 , which are not listed here one by one.

[0050] Of course, in other embodiments, the light detection device 120 may include a dedicated sensor for detecting glow parameters. For example, if the intensity of the glow needs to be detected, the light detection device 120 may include a light intensity sensor. Those skilled in the art may flexibly set the light detection device 120 according to actual needs, which will not be described in detail here.

[0051] refer to Figure 1 In some embodiments, the semiconductor process chamber 110 further includes a voltage monitoring device 130 , which is electrically connected to a surface of the upper electrode 113 facing away from the plasma discharge chamber 112 . The voltage monitoring device 130 is used to detect a voltage on a surface of the plasma discharge chamber 112 .

[0052] In some embodiments, the voltage monitoring device 130 is disposed close to the upper electrode 113 , and includes a first voltage sensor and a second voltage sensor. The first voltage sensor is used to collect the voltage of the upper electrode 113 to the ground, and the second voltage sensor is used to collect the surface DC bias of the upper electrode 113 .

[0053] The semiconductor process equipment further includes a controller 160. The controller 160 is electrically connected to the first voltage sensor, the second voltage sensor, and the light detection device 120 to receive the ground voltage of the upper electrode 113, the surface DC bias voltage of the upper electrode 113, and the glow parameter. In some embodiments, the controller 160 and the first voltage sensor, the second voltage sensor, and the light detection device 120 can be connected via Ethernet communication.

[0054] Exemplarily, the voltage monitoring device 130 may be an RF electrode voltage monitoring module (Electrode Voltage Monitor, EVM). The RF electrode voltage monitoring module may be connected to the upper surface of the spray plate of the upper electrode 113 through a metal conductor. In order to improve the accuracy of the voltage value detected by the RF electrode voltage monitoring module, the RF electrode voltage monitoring module may be close to the spray plate.

[0055] For example, during the implementation of the Plasma Enhanced Atomic Layer Deposition (PEALD) process in the semiconductor process chamber 110, it is critical to monitor the voltage value formed at the upper electrode 113 (the upper electrode is generally referred to as the RF electrode) during the ignition process. This is an important parameter for judging the matching degree of RF power loss with different chambers.

[0056] In some embodiments, the RF electrode voltage monitoring module integrates two voltage sensors. One voltage sensor is used for the voltage Vpp of the upper electrode 113 to the ground; the other voltage sensor is used to collect the DC bias voltage Vdc on the surface of the upper electrode 113. The RF electrode voltage monitoring module can transmit the voltage data to the controller 160 via a communication cable.

[0057] When the semiconductor process chamber 110 is in operation, if the ground voltage Vpp and the DC bias voltage Vdc fluctuate within the tolerance range, the semiconductor process chamber 110 is considered to be in normal operation. However, if the ground voltage Vpp and the DC bias voltage Vdc continue to have abnormal values ​​that suddenly change, the controller 160 controls the alarm device to send an alarm signal.

[0058] refer to Figure 1 Furthermore, the semiconductor process chamber 110 further includes: a radio frequency power supply 140 and a matcher 141. The radio frequency power supply 140 (13.56 MHz) is directly connected to the matcher 141, and the matcher 141 is connected to the upper electrode 113 through a metal strip (for example, the total length of the metal strip is about 30 cm).

[0059] The RF power supply 140, the matcher 141, the voltage monitoring device 130 and the light detection device 120 are respectively connected to the controller 160. The RF power supply 140 can transmit the actual operating frequency (Actual Frequency) during process ignition to the controller 160, which can be used as an important parameter for monitoring the power transmission state. When the semiconductor process chamber 110 is in the working state, the RF power supply 140, the matcher 141, the voltage monitoring device 130 and the light detection device 120 will transmit their collected data to the controller 160, and the controller 160 will compare it with the data set on the machine end to determine whether the semiconductor process chamber 110 is working normally.

[0060] The isolation ring 115 is used to isolate the upper electrode 113 from the outer wall 111 of the chamber, and the isolation ring 115 is used to separate the plasma discharge chamber 112 from the outside. The lower electrode 114 includes a heater. The heater is used to heat the wafer carried by the lower electrode 114. The lower electrode 114 can act as a radio frequency grounding electrode. The process gases such as argon and oxygen required for the process reaction in the semiconductor process chamber 110 can enter the plasma discharge chamber 112 through the gas pipeline 150. The ceramic block 151 is fastened to the spray plate to play an insulating role to prevent the radio frequency voltage from being introduced into the gas pipeline, causing loss and affecting the process. Exemplarily, the material of the chamber outer wall 111 is aluminum, and the chamber outer wall 111 plays the role of supporting the various components in the chamber and maintaining a closed space.

[0061] The light detection device 120 may be a plasma light detection module (Plasma Light Detector, PLD). The plasma light detection module is fixed to the outer wall 111 of the chamber, and a circle of light-sensitive areas is provided on the front panel of the plasma light detection module.

[0062] For example, in combination Figure 3 , the second perforation opened on the isolation ring 115 can be a circular hole, and the diameter of the second perforation can be 4 cm. The second perforation is aligned with the plasma discharge chamber 112 so that the glow passes through the second perforation. In order not to affect the gas flow field distribution and the plasma discharge state, and at the same time to ensure the glow penetration, the second perforation is filled with a sapphire glass lens with the same composition (aluminum oxide) as the isolation ring 115. In other words, the second light guide column 1122 is a sapphire glass lens. The sapphire glass lens has good corrosion resistance and good stability in the plasma area; and the sapphire glass lens has high transparency, which can maximize the passage of the glow in the plasma discharge chamber 112.

[0063] A first perforation is provided at a position of the outer wall 111 of the chamber opposite to the second perforation. The first perforation may be a circular hole, and the diameter of the first perforation may be 4.5 cm. A sapphire glass lens is also filled on the side of the first perforation close to the isolation ring 115. In other words, the first light guide column 1112 is a sapphire glass lens.

[0064] A focusing lens 1113 is provided on the side of the sapphire glass lens facing away from the second perforation. The diameter of the focusing lens 1113 is slightly smaller than that of the first perforation, and the focusing lens 1113 is installed in the first perforation. Exemplarily, the spherical surface of the focusing lens 1113 faces the first light guide column 1112, and the plane of the focusing lens 1113 faces the light detection device 120. The focusing lens 1113 can gather the plasma glow transmitted through the first light guide column 1112, and can form a strong light spot at the focal length position. Generally speaking, the focal length of the focusing lens 1113 can reach more than 10 cm, so that the light spot can be accurately projected into the photosensitive area of ​​the light detection device 120, which can improve the lighting threshold and accuracy of the light detection device 120.

[0065] In some embodiments, the semiconductor process chamber 110 further includes a cooling device, which is disposed on the outer surface of the voltage monitoring device 130, and is used to dissipate heat from the voltage monitoring device 130. Exemplarily, the cooling device includes a water cooling pipeline, which covers the outer surface of the voltage monitoring device 130, and reduces the temperature of the voltage monitoring device 130 by water cooling to prevent the voltage monitoring device 130 from temperature drift.

[0066] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0067] Although the embodiments of the present application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the embodiments of the present application, and the scope of the embodiments of the present application is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber (110), characterized in that: include: The semiconductor process chamber (110) is provided with a plasma discharge chamber (112); The chamber outer wall (111) is arranged outside the plasma discharge chamber (112), the chamber outer wall (111) is provided with a first through hole (1111), a first light guide column (1112) for blocking the first through hole (1111) is arranged inside the first through hole (1111), the first light guide column (1112) is used to transmit light inside the plasma discharge chamber (112), and a focusing lens (1113) is arranged on a side of the first light guide column (1112) facing away from the semiconductor process chamber (110).

2. The semiconductor process chamber (110) according to claim 1, characterized in that: A metal shielding net (1114) is provided on the side of the condenser lens (1113) facing away from the plasma discharge chamber (112).

3. The semiconductor process chamber (110) according to claim 1, characterized in that: The semiconductor process chamber (110) comprises an upper electrode (113), a lower electrode (114) and an isolation ring (115); The isolation ring (115) is arranged around the outer circumference of the lower electrode (114); the plasma discharge chamber (112) is surrounded by the upper electrode (113), the isolation ring (115) and the lower electrode (114); a second light-transmitting portion (1121) is provided at a portion of the isolation ring (115) opposite to the first through hole (1111); the second light-transmitting portion (1121) is used to transmit light in the plasma discharge chamber (112).

4. The semiconductor process chamber (110) according to claim 3, characterized in that: A second through hole is provided in the portion of the isolation ring (115) located at the second light-transmissive portion (1121), and a second light guide column (1122) is provided in the second through hole to block the second through hole.

5. The semiconductor process chamber (110) according to claim 3, characterized in that: The semiconductor process chamber (110) further comprises an insulating ring (116), wherein the insulating ring (116) is wound around the outer side of the upper electrode (113), the insulating ring (116) is supported on the top of the outer wall (111) of the chamber, the upper electrode (113) is supported on the insulating ring (116), the insulating ring (116) and the upper electrode (113) cover the outer wall (111) of the chamber, and the isolation ring (115) is located below the insulating ring (116).

6. The semiconductor process chamber (110) according to any one of claims 1 to 5, characterized in that: The semiconductor process chamber (110) is a capacitively coupled plasma process chamber, and the upper electrode (113) of the semiconductor process chamber (110) comprises a spray plate.

7. A semiconductor process equipment, characterized in that: include: The semiconductor process chamber (110) according to any one of claims 1 to 6; as well as The light detection device (120) is arranged outside the outer wall (111) of the chamber, the detection surface of the light detection device (120) faces the condenser lens (1113), and the light detection device (120) is used to detect glow parameters.

8. The semiconductor process equipment according to claim 7, characterized in that: The light detection device (120) comprises a camera.

9. The semiconductor process equipment according to claim 7 or 8, characterized in that: The semiconductor process equipment further comprises a voltage monitoring device (130), wherein the voltage monitoring device (130) is electrically connected to a surface of an upper electrode (113) of the semiconductor process chamber (110) that faces away from the plasma discharge chamber (112).

10. The semiconductor process equipment according to claim 9, characterized in that: The semiconductor process equipment further comprises a cooling device, which is arranged on the outer surface of the voltage monitoring device (130) and is used to dissipate heat from the voltage monitoring device (130).

11. The semiconductor process equipment according to claim 9, characterized in that: The voltage monitoring device (130) is arranged close to the upper electrode (113), and comprises a first voltage sensor and a second voltage sensor, wherein the first voltage sensor is used to collect the voltage of the upper electrode (113) to the ground, and the second voltage sensor is used to collect the surface DC bias voltage of the upper electrode (113); The semiconductor process equipment also includes a controller (160), which is electrically connected to the first voltage sensor, the second voltage sensor and the light detection device (120) to receive the ground voltage of the upper electrode (113), the surface DC bias of the upper electrode (113) and the glow parameter.

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