Chuck plate for increasing vacuum adsorption force on wafer
By machining grooves on the surface of the chuck disk to connect vacuum pores, the wafer adsorption area is increased, and the problem of poor adsorption of warped wafers is solved, and the yield and spray stability of the wafer are improved.
Patent Information
- Application Number
- CN202323358028.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-11
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2033-12-11
AI Technical Summary
In the prior art, warped wafers cannot be closely attached to the surface of the chuck disk during adsorption, resulting in uneven spraying, manual intervention and wafer shift, resulting in fragmentation and reduced wafer yield.
Process grooves on the surface of the chuck disk, including irregular grooves, concentric circles and concentric square grooves, connect vacuum holes, increase the vacuum adsorption area between the wafer and the chuck disk, and ensure that the warped wafer is closely attached to adsorption.
It effectively solves the problems of offset and chipping of warped wafers during adsorption, improves the yield of the wafer, avoids manual intervention, and ensures the stability of the spraying operation.
Smart Images

Figure CN222233602U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a chuck plate that increases the vacuum adsorption force on wafers. Background Art
[0002] The adsorption of wafers is a crucial link. During the adsorption process, the wafer must be stably and precisely fixed in the correct position to ensure efficient chip production.
[0003] The process of mechanical vacuum adsorption of wafers is as follows: the robot automatically extracts the wafer and places it on three pins. After the three pins drop to the specified height, the vacuum of the chuck plate is opened. After the wafer is lowered to the chuck plate and vacuum adsorbed to the set requirements, the glue pump, ultrasonic wave and nitrogen are started at the same time to start atomizing the photoresist. The arm electric cylinders of the X and Y axes move at the set position to achieve spraying. If the wafer is warped and cannot be well attached to the surface of the chuck plate, during the spraying process, the wafer will be blown off by nitrogen and slide out of the chuck plate, causing fragments, which will lead to a reduction in the yield of the wafer. In particular, if there is a wafer with a warpage greater than 1mm, manual intervention is required during the adsorption process, which affects the cleanliness of the product and also reduces the yield of the wafer. Utility Model Content
[0004] In view of the deficiencies in the prior art, the utility model provides a chuck plate that increases the vacuum adsorption force on wafers, so that the wafers can be tightly attached to the surface of the chuck plate, thereby improving the yield of the wafers.
[0005] The utility model achieves the above technical purpose through the following technical means.
[0006] A chuck plate for increasing the vacuum adsorption force on a wafer comprises vacuum holes, pin holes and grooves processed on the surface. The vacuum holes are divided into an outer edge part and a middle part. The groove at least connects the vacuum holes in the middle part.
[0007] In the above technical solution, the groove is an irregular groove that connects all the vacuum holes.
[0008] In the above technical solution, the grooves are a plurality of concentric circles that connect the vacuum holes in the middle part, and the plurality of concentric circles are connected in the radial direction.
[0009] In the above technical solution, the number of the concentric circles is 1-6.
[0010] In the above technical solution, there are three concentric circles, and the vacuum hole in the middle is located exactly on the second circle.
[0011] In the above technical solution, the grooves are a plurality of concentric squares that connect the vacuum holes in the middle part, and the plurality of concentric squares are connected in the radial direction.
[0012] In the above technical solution, the number of the concentric squares is 1-6.
[0013] In the above technical solution, there are three concentric squares, and the vacuum hole in the middle is located exactly on the second square.
[0014] In the above technical solution, the depth of the groove ranges from 0.1mm to 0.5mm, and the width ranges from 0.5mm to 0.8mm.
[0015] In the above technical solution, the depth of the groove is 0.3 mm and the width is 0.5 mm.
[0016] The beneficial effects of the utility model are as follows: the utility model processes various forms of grooves on the surface of the existing chuck plate, and the grooves have irregular shapes, concentric circles or concentric squares, thereby increasing the vacuum adsorption area of the wafer and the chuck plate. Even if the warped wafer is in a situation where the vacuum adsorption surface is increased, it can still be tightly attached to the chuck plate, thereby stably completing the spraying operation, effectively solving the problems of uneven spraying caused by wafer warping, the need for manual intervention, and wafer shifting causing fragmentation, thereby improving the wafer yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a schematic diagram of the structure of a chuck disk in the prior art;
[0018] Figure 2 This is a schematic diagram of the first structure of the chuck plate for increasing the vacuum adsorption force on the wafer according to the utility model;
[0019] Figure 3 This is a schematic diagram of the second structure of the chuck plate for increasing the vacuum adsorption force on the wafer according to the utility model;
[0020] Figure 4 This is a schematic diagram of the third structure of the chuck plate for increasing the vacuum adsorption force on the wafer according to the utility model;
[0021] In the figure, 1-vacuum hole, 2-pin hole, 3-groove. DETAILED DESCRIPTION
[0022] In order to make the purpose and technical solution of the utility model clearly and completely described, and the advantages more clearly understood, the embodiments of the utility model are further described in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described here are part of the embodiments of the utility model, not all of the embodiments, and are only used to explain the embodiments of the utility model, and are not used to limit the embodiments of the utility model.
[0023] The utility model is described in detail with reference to the schematic diagram. When describing the embodiments of the utility model in detail, the schematic diagram is only an example and should not limit the scope of protection of the utility model. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.
[0024] Figure 1 The chuck plate in the prior art is shown, and a vacuum hole 1 and a pin hole 2 are processed on the surface of the chuck plate.
[0025] Specifically, the number of the pin holes 2 is 3, which are distributed on the surface of the chuck plate in the form of an equilateral triangle. The arrangement of the pin holes 2 facilitates the movement of the pin needle.
[0026] Specifically, the number of vacuum holes 1 varies. Figure 1 The number of vacuum holes 1 shown is 8, and the vacuum holes 1 are divided into an outer edge part and a middle part. The vacuum holes 1 are connected to the vacuum pump through a pipeline, and the solenoid valve on the pipeline is controlled by PLC to achieve vacuum adsorption.
[0027] When the wafer is adsorbed by the chuck plate in the prior art, if the wafer is warped, the vacuum hole 1 cannot be well adsorbed on the surface of the chuck plate, which causes the wafer to be blown off the chuck plate by nitrogen during the spraying process, resulting in broken wafers and reducing the yield of the wafer. If the wafer warpage is greater than 1mm, manual intervention is required during the adsorption process, which affects the cleanliness of the product and also reduces the yield of the wafer.
[0028] In view of the shortcomings of the chuck plate in the prior art in the process of adsorbing wafers, the utility model provides a chuck plate that increases the vacuum adsorption force on the wafer, the surface of which retains the existing vacuum holes 1 and pin holes 2, and a groove 3 is processed on the upper surface of the chuck plate by a CNC lathe, the depth of the groove is 0.1mm-0.5mm, preferably 0.3mm in this embodiment, and the width of the groove is 0.5mm-0.8mm, preferably 0.5mm in this embodiment.
[0029] The groove has three forms:
[0030] The first form is a slot that connects all vacuum holes 1. Figure 2Only one way of connecting all the vacuum holes is shown. There are several ways of connecting all the vacuum holes 1 according to the number of vacuum holes, and they will not be listed one by one here.
[0031] The second form is to connect the vacuum hole 1 in the middle with multiple concentric circles, and the multiple concentric circles are connected in the radial direction. The number of concentric circles is 1-6, and 3 is preferred in this embodiment. At this time, the vacuum hole 1 in the middle is just located on the second circle. Figure 3 .
[0032] like Figure 4 As shown, the third form is a plurality of concentric squares connecting the vacuum hole 1 in the middle part, and the plurality of concentric squares are connected radially, the number of the concentric squares is 1-6, and 3 are preferred in this embodiment, and the vacuum hole 1 in the middle part is located exactly in the second square.
[0033] The utility model can increase the vacuum adsorption area between the wafer and the chuck plate by processing the groove 3 on the surface of the chuck plate. Even if there is a warped wafer, it can be tightly attached to the chuck plate without manual intervention. In addition, during the spraying process, the wafer can be prevented from being blown off the chuck plate, thereby significantly improving the yield of the wafer.
[0034] The embodiments are preferred implementations of the present invention, but the present invention is not limited to the above-mentioned implementations. Any obvious improvements, substitutions or modifications that can be made by those skilled in the art without departing from the essential content of the present invention belong to the protection scope of the present invention.
Claims
1. A chuck plate for increasing the vacuum adsorption force on a wafer, characterized in that: It comprises a vacuum hole (1), a pin hole (2) and a groove (3) processed on the surface, wherein the vacuum hole (1) is divided into an outer edge portion and a middle portion, and the groove (3) at least connects the vacuum hole (1) in the middle portion.
2. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 1, characterized in that: The grooves (3) are a plurality of concentric circles that connect the vacuum holes (1) in the middle portion, and the plurality of concentric circles are connected in the radial direction.
3. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 2, characterized in that: The number of the concentric circles is 1-6.
4. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 3, characterized in that: There are three concentric circles, and the vacuum hole (1) in the middle is located exactly on the second circle.
5. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 1, characterized in that: The grooves (3) are a plurality of concentric squares that connect the vacuum holes (1) in the middle portion, and the plurality of concentric squares are connected in the radial direction.
6. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 5, characterized in that: The number of the concentric squares is 1-6.
7. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 6, characterized in that: There are three concentric squares, and the vacuum hole (1) in the middle is located exactly on the second square.
8. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 1, characterized in that: The depth of the groove ranges from 0.1 mm to 0.5 mm, and the width ranges from 0.5 mm to 0.8 mm.
9. The chuck plate for increasing the vacuum adsorption force on the wafer according to claim 8, characterized in that: The groove has a depth of 0.3 mm and a width of 0.5 mm.
