Radio frequency front-end module

Abstract

The utility model relates to the technical field of integrated circuits, in particular to a radio frequency front-end module which comprises a substrate and a radio frequency power amplification chip arranged on the substrate. The radio frequency power amplification chip comprises a differential amplification module, the differential amplification module comprises a first amplification circuit and a second amplification circuit, and the output end of the first amplification circuit and the output end of the second amplification circuit are symmetrically arranged about a first linear axis; the substrate is provided with a first power port and a first feed node connected with the first power port, and the first feed node is located on the first straight line; the output end of the first amplifying circuit is connected with the first feed node through a first connecting line, the output end of the second amplifying circuit is connected with the first feed node through a second connecting line, and the first connecting line and the second connecting line are symmetrically arranged relative to the first linear axis. The balance of the differential amplification module is improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a radio frequency front-end module. Background Art

[0002] The power amplifier module can be used to transmit radio frequency signals in the WiFi working frequency band. The existing WiFi power amplifier module architecture mostly adopts a single-ended architecture, and there is no need to consider the balance of the power amplifier module. Sometimes, in order to improve the efficiency of the power amplifier module, a differential architecture is required, so the balance of the power amplifier module needs to be considered. For example, the balance of the power supply line of the differential power amplifier module. If the power supply line of the differential power amplifier module is unbalanced, it will lead to unbalanced impedance, which will increase the power amplifier module combining loss and poor common mode rejection. Utility Model Content

[0003] In view of the above problems, an embodiment of the present application provides a radio frequency front-end module to solve the above technical problems.

[0004] The embodiment of the present application provides a radio frequency front-end module, comprising a substrate and a radio frequency power amplifier chip arranged on the substrate;

[0005] The radio frequency power amplifier chip includes a differential amplifier module, the differential amplifier module includes a first amplifier circuit and a second amplifier circuit, and the output end of the first amplifier circuit and the output end of the second amplifier circuit are symmetrically arranged about a first straight line axis;

[0006] The substrate is provided with a first power port and a first feeding node connected to the first power port, and the first feeding node is located on the first straight line;

[0007] The output end of the first amplifier circuit is connected to the first feeding node through a first connecting line, and the output end of the second amplifier circuit is connected to the first feeding node through a second connecting line, wherein the first connecting line and the second connecting line are symmetrically arranged about the first straight line axis.

[0008] Optionally, a second feeding node and a third feeding node which are symmetrically arranged about the first straight line axis are further provided on the substrate;

[0009] The first connecting line includes a first connecting portion connecting the first feeding node and a second feeding node, and a second connecting portion connecting the second feeding node and an output end of the first amplifying circuit;

[0010] The second connecting line includes a third connecting portion connecting the first feeding node and a third feeding node, and a fourth connecting portion connecting the third feeding node and an output end of the second amplifying circuit;

[0011] The first connection portion and the third connection portion are symmetrically arranged about the first straight line axis, and the second connection portion and the fourth connection portion are symmetrically arranged about the first straight line axis.

[0012] Optionally, the RF power amplifier chip has a first side and a second side that are relatively arranged, the second feeding node is located on the extension line of the first side and is arranged close to the first side, and the third feeding node is located on the extension line of the second side and is arranged close to the second side.

[0013] Optionally, the first power port is connected to the first feeding node via a third connecting line;

[0014] The first connection portion and the third connection portion are respectively routing lines on the substrate, and the second connection portion, the fourth connection portion and the third connection wire are respectively bonding wires.

[0015] Optionally, a signal input port and a signal output port are also provided on the substrate;

[0016] The radio frequency power amplifier chip includes a multi-stage power amplifier module connected between the signal input port and the signal output port;

[0017] Among them, at least one stage of the power amplification module is configured as the differential amplification module.

[0018] Optionally, at least two of the first power ports and at least two of the first feeding nodes are provided on the substrate, and at least two stages of the power amplification modules are configured as the differential amplification modules;

[0019] Each of the differential amplifier modules corresponds to a first feeding node and a first power port, and each of the differential amplifier modules is connected to a corresponding first power port through a corresponding first feeding node.

[0020] Optionally, at least one of the first power ports is connected to the corresponding first feeding node via a third connecting line;

[0021] The first connection line and the second connection line are bonding wires respectively, and the third connection line is a routing line on the substrate.

[0022] Optionally, one of the power amplification modules is configured as the differential amplification module, and the remaining power amplification modules are configured as single-ended amplification modules;

[0023] The single-ended amplification module and the differential amplification module are sequentially connected between the signal input port and the signal output port.

[0024] Optionally, the substrate is further provided with a second power port corresponding to each of the single-ended amplifier modules, and the output end of the single-ended amplifier module is connected to the corresponding second power port.

[0025] Optionally, the RF front-end module further includes an output balun, and the last-stage differential amplifier module is connected to the output balun;

[0026] The intermediate node of the primary winding of the output balun is configured as the first feeding node of the last-stage differential amplifier module, and the primary winding includes a first part between the intermediate node and one end of the primary winding, and a second part between the intermediate node and the other end of the primary winding; the first connecting line includes the first part of the primary winding, and the second connecting line includes the second part of the primary winding.

[0027] Optionally, the RF front-end module also includes an input matching module, an inter-stage matching module, and an output matching module, the input matching module is connected between the signal input port and the power amplification module, the inter-stage matching module is connected between two adjacent power amplification modules, and the output matching module is connected between the power amplification module and the signal output port.

[0028] The RF front-end module provided in the embodiment of the present application includes a substrate and an RF power amplifier chip arranged on the substrate; the RF power amplifier chip includes a differential amplifier module, the differential amplifier module includes a first amplifier circuit and a second amplifier circuit, the output end of the first amplifier circuit and the output end of the second amplifier circuit are symmetrically arranged about a first straight line; a first power port and a first feeding node connected to the first power port are arranged on the substrate, and the first feeding node is located on the first straight line; the output end of the first amplifier circuit is connected to the first feeding node through a first connecting line, and the output end of the second amplifier circuit is connected to the first feeding node through a second connecting line, wherein the first connecting line and the second connecting line are symmetrically arranged about the first straight line; in the above manner, a first feeding node located on the first straight line is arranged on the substrate, the output end of the first amplifier circuit and the output end of the second amplifier circuit are symmetrically arranged about the first straight line, and the first connecting line used to connect the output end of the first amplifier circuit and the first feeding node and the second connecting line used to connect the output end of the second amplifier circuit and the first feeding node are symmetrically arranged about the first straight line, so that the length of the first connecting line is equal to the length of the second connecting line, thereby improving the balance of the differential amplifier module.

[0029] These and other aspects of the present application will become more clearly understood in the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1A structural block diagram of a radio frequency front-end module provided in an embodiment of the present application is shown.

[0031] Figure 2 A schematic diagram of the structure of the radio frequency front-end module provided in an embodiment of the present application is shown.

[0032] Figure 3 Shows Figure 2 The circuit diagram of the RF front-end module is shown.

[0033] Figure 4 A schematic diagram of the structure of the radio frequency front-end module provided in an embodiment of the present application is shown.

[0034] Figure 5 Shows Figure 4 The circuit diagram of the RF front-end module is shown. DETAILED DESCRIPTION

[0035] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0036] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0037] In the embodiments of the present application, it should be noted that, in this article, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0038] Moreover, the terms "comprises," "comprising," or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0039] In the description of the embodiments of the present application, words such as "example" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "example" or "for example" in the embodiments of the present application is not to be interpreted as being more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.

[0040] In addition, the "plurality" in the embodiments of the present application refers to two or more than two. In view of this, in the embodiments of the present application, "plurality" can also be understood as "at least two". "At least one" can be understood as one or more, for example, one, two or more. For example, including at least one means including one, two or more, and there is no limit on which ones are included. For example, including at least one of A, B and C, then A, B, C, A and B, A and C, B and C, or A, B and C can be included.

[0041] It should be noted that, in the embodiments of the present application, "and / or" describes the association relationship of the associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after are in an "or" relationship.

[0042] It should be noted that in the embodiments of the present application, "connection" can be understood as electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0043] An embodiment of the present application provides a radio frequency front-end module, including a substrate 100 and a radio frequency power amplifier chip 200. Figure 1 As shown. The RF power amplifier chip 200 is arranged on the substrate 100. The RF power amplifier chip 200 includes a differential amplifier module 300, and the differential amplifier module 300 includes a first amplifier circuit and a second amplifier circuit. The output end 310 of the first amplifier circuit and the output end 320 of the second amplifier circuit are arranged symmetrically about the first straight line L1. A first power port 110 and a first feeding node 120 are arranged on the substrate 100, and the first feeding node 120 is connected to the first power port 110, and the first feeding node 120 is located on the first straight line L1. The output end 310 of the first amplifier circuit is connected to the first feeding node 120 through a first connecting line 410, and the output end 320 of the second amplifier circuit is connected to the first feeding node 120 through a second connecting line 420. Among them, the first connecting line 410 and the second connecting line 420 are arranged symmetrically about the first straight line L1.

[0044] In this embodiment, a first feeding node 120 located on the first straight line L1 is provided on the substrate 100, and the output end 310 of the first amplifier circuit and the output end 320 of the second amplifier circuit are arranged symmetrically about the first straight line L1, and a first connecting line 410 for connecting the output end 310 of the first amplifier circuit and the first feeding node 120 and a second connecting line 420 for connecting the output end 320 of the second amplifier circuit and the first feeding node 120 are arranged symmetrically about the first straight line L1, so that the length of the first connecting line 410 is equal to the length of the second connecting line 420, so that the inductance between the first power port 110 and the output end 310 of the first amplifier circuit is approximately equal to the inductance between the first power port 110 and the output end 320 of the second amplifier circuit, thereby improving the balance of the differential amplifier module 300.

[0045] As an example, the structures of the first amplifier circuit and the second amplifier circuit can be the same. The first amplifier circuit and the second amplifier circuit can respectively include a transistor or a plurality of transistors in parallel, which are used to achieve power amplification of the radio frequency signal. Optionally, the transistor can be a metal oxide semiconductor (MOS) field effect transistor or a bipolar junction transistor (bipolar junction transistor, BJT) or a heterojunction bipolar transistor (Heterojunction bipolar transistor, HBT). Taking the bipolar junction transistor and the heterojunction bipolar transistor as examples, the collector is the output terminal and is also the terminal for receiving the power supply signal.

[0046] In some embodiments, a second feeding node 130 and a third feeding node 140 are further disposed on the substrate 100. The second feeding node 130 and the third feeding node 140 are disposed symmetrically about the first straight line L1. Figure 2 shown.

[0047] In this implementation, see Figure 2 As shown, the first connecting line 410a includes a first connecting portion 411 and a second connecting portion 412. The first connecting portion 411 connects the first feeding node 120a and the second feeding node 130, and the second connecting portion 412 connects the second feeding node 130 and the output end 310a of the first amplifier circuit. The second feeding node 130 can be set at a corresponding position as needed, thereby changing the extension direction of the first connecting line 410a, avoiding the first connecting line 410a from being parallel to or too close to other connecting lines, thereby avoiding problems such as signal distortion and energy loss caused by coupling effects.

[0048] In this implementation, see Figure 2As shown, the second connecting line 420a includes a third connecting portion 421 and a fourth connecting portion 422. The third connecting portion 421 connects the first feeding node 120a and the third feeding node 140, and the fourth connecting portion 422 connects the third feeding node 140 and the output end 320a of the second amplifier circuit. The third feeding node 140 can be set at a corresponding position as needed, thereby changing the extension direction of the second connecting line 420a, avoiding the second connecting line 420a from being parallel to or too close to other connecting lines, thereby avoiding problems such as signal distortion and energy loss caused by coupling effects.

[0049] The first connecting portion 411 and the third connecting portion 421 are arranged symmetrically about the first straight line L1, and the second connecting portion 412 and the fourth connecting portion 422 are arranged symmetrically about the first straight line L1, which can effectively ensure that the first connecting line 410a and the second connecting line 420a are arranged symmetrically about the first straight line L1 as a whole, and the length of the first connecting line 410a is equal to the length of the second connecting line 420a, thereby further improving Figure 3 The balance of the differential amplifier module 300a.

[0050] As an implementation, see Figure 2 , an output balun 500 is also provided on the RF front-end module. The differential amplifier module 300a is also connected to one end of the primary winding of the output balun 500 through the fourth connecting line 440, and the differential amplifier module 300a is also connected to the other end of the primary winding of the output balun 500 through the fifth connecting line 450. Exemplarily, the output end 310a of the first amplifier circuit is connected to one end of the primary winding of the output balun 500 through the fourth connecting line 440, and the output end 320a of the second amplifier circuit is connected to the other end of the primary winding of the output balun 500 through the fifth connecting line 450.

[0051] In this embodiment, the first connecting line 410a is not directly connected between the first feeding node 120a and the output end 310a of the first amplifier circuit, but includes a first connecting portion 411 connecting the first feeding node 120a and the second feeding node 130, and a second connecting portion 412 connecting the second feeding node 130 and the output end 310a of the first amplifier circuit, wherein the distance from the second feeding node 130 to the first straight line L1 is farther than the distance from the output end 310a of the first amplifier circuit to the first straight line L1, so that a certain angle is formed between the second connecting portion 412 and the fourth connecting line 440, widening the distance between the second connecting portion 412 and the fourth connecting line 440, and avoiding coupling between the second connecting portion 412 and the fourth connecting line 440.

[0052] Accordingly, in the present embodiment, the second connecting line 420a is not directly connected between the first feeding node 120a and the output terminal 320a of the second amplifier circuit, but includes a third connecting portion 421 connecting the first feeding node 120a and the third feeding node 140, and a fourth connecting portion 422 connecting the third feeding node 140 and the output terminal 320a of the second amplifier circuit, wherein the distance from the third feeding node 140 to the first straight line L1 is farther than the distance from the output terminal 320a of the second amplifier circuit to the first straight line L1, so that a certain angle is formed between the fourth connecting portion 422 and the fifth connecting line 450, thereby widening the distance between the fourth connecting portion 422 and the fifth connecting line 450, and avoiding coupling between the fourth connecting portion 422 and the fifth connecting line 450.

[0053] As an implementation, please refer to Figure 2 The RF power amplifier chip 200 has a first side 210 and a second side 220 that are arranged opposite to each other. The second feeding node 130 is located on an extension line L2 of the first side 210, and the second feeding node 130 is arranged close to the first side 210. The third feeding node 140 is located on an extension line L3 of the second side 220, and the third feeding node 140 is arranged close to the second side 220.

[0054] In this embodiment, the second feed node 130 is located on the extension line L2 of the first side 210, and the third feed node 140 is located on the extension line L3 of the second side 220, which can not only avoid the coupling effect caused by the parallelism of the second connection part 412 and the fourth connection line 440, and avoid the coupling effect caused by the parallelism of the fourth connection part 422 and the fifth connection line 450, but also make the structure of the RF front-end module more compact, thereby effectively reducing the area of ​​the RF front-end module. Moreover, the second feed node 130 is arranged close to the first side 210, which can further increase the angle between the second connection part 412 and the fourth connection line 440, and weaken the coupling between the second connection part 412 and the fourth connection line 440. In addition, the length of the second connection part 412 can be shortened to avoid parasitics caused by the excessive length of the second connection part 412. The third feed node 140 is arranged close to the second side 220, which can further increase the angle between the fourth connection part 422 and the fifth connection line 450, and weaken the coupling between the fourth connection part 422 and the fifth connection line 450. In addition, the length of the fourth connection portion 422 can be shortened to avoid parasitism caused by the fourth connection portion 422 being too long.

[0055] As an implementation, please refer to Figure 2The first power port 110a is connected to the first feeding node 120a through the third connection line 430a. The first connection portion 411 and the third connection portion 421 are respectively routing lines on the substrate 100, and the second connection portion 412, the fourth connection portion 422 and the third connection line 430a are respectively bonding wires.

[0056] In this embodiment, the first connection portion 411 and the third connection portion 421 are of the same type, and are respectively wires on the substrate 100, and the second connection portion 412 and the fourth connection portion 422 are of the same type, and are respectively bonding wires, which can further improve the balance of the differential amplifier module 300a. Moreover, setting the first connection portion 411 and the third connection portion 421 as wires on the substrate 100 and setting the third connection wire 430a as a bonding wire can improve the balance while avoiding a messy layout caused by too many bonding wires or wires, making the layout of the RF front-end module more neat and compact.

[0057] In some embodiments, a signal input port RF in and a signal output port RF out are also provided on the substrate 100. The RF power amplifier chip 200 includes a multi-stage power amplifier module, and all the power amplifier modules are sequentially connected between the signal input port RF in and the signal output port RF out. Among them, at least one stage of the power amplifier module is configured as a differential amplifier module 300.

[0058] As an example, see Figure 5 As shown, all power amplifier modules can be configured as differential amplifier modules, which are better balanced. Alternatively, please refer to Figure 3 As shown, some of the power amplifier modules can be configured as differential amplifier modules, and the remaining power amplifier modules can be configured as single-ended amplifier modules, which is beneficial to simplify the circuit structure and reduce the area of ​​the RF power amplifier chip 200.

[0059] In some embodiments, see Figure 4 As shown, at least two first power ports 110 and at least two first feeding nodes 120 are provided on the substrate 100, and at least two-stage power amplifier modules are configured as differential amplifier modules 300, which have better balance. Each differential amplifier module 300 corresponds to a first feeding node 120 and a first power port 110, and each differential amplifier module 300 is connected to the corresponding first power port 110 through the corresponding first feeding node 120, which can reduce the coupling caused by redundant routing and the messy layout caused by redundant bonding wires, making the layout of the RF front-end module more neat and compact.

[0060] As an implementation, see Figure 5As shown, the RF power amplifier chip 200 includes two-stage power amplifier modules, namely, a differential amplifier module 300b and a differential amplifier module 300c, wherein the differential amplifier module 300b is a front-stage power amplifier module, and the differential amplifier module 300c is a rear-stage power amplifier module. Figure 4 As shown, two first power ports 110 are provided on the substrate 100, namely, the first power port 110b and the first power port 110c. Two first feed nodes 120 are also provided on the substrate 100, namely, the first feed node 120b and the first feed node 120c. Among them, the differential amplifier module 300b corresponds to the first feed node 120b and the first power port 110b, specifically, the first power port 110b is connected to the first feed node 120b through the third connecting line 430b, the first feed node 120b is connected to the output end 310b of the first amplifier circuit of the differential amplifier module 300b through the first connecting line 410b, and the first feed node 120b is also connected to the output end 320b of the second amplifier circuit of the differential amplifier module 300b through the second connecting line 420b. The differential amplifier module 300c corresponds to the first feeding node 120c and the first power port 110c. Specifically, the first power port 110c is connected to the first feeding node 120c through the third connecting line 430c, the first feeding node 120c is connected to the output end 310c of the first amplifier circuit of the differential amplifier module 300c through the first connecting line 410c, and the first feeding node 120c is also connected to the output end 320c of the second amplifier circuit of the differential amplifier module 300c through the second connecting line 420c. When there are multiple stages of differential amplifier modules 300, different differential amplifier modules 300 are powered by different first power ports 110 and feeding paths, which can shorten the feeding path of each stage of differential amplifier module 300, making the layout of the RF front-end module more concise and neat, and reducing the coupling caused by redundant wiring.

[0061] In some embodiments, at least one first power port 110 is connected to the corresponding first feeding node 120 via a third connection line, and then connected to the output end 310 of the first amplifier circuit and the output end 320 of the second amplifier circuit via a first connection line 410 and a second connection line 420, respectively. Exemplarily, the first connection line 410 and the second connection line 420 are bonding wires, respectively, and the third connection line is a routing line on the substrate 100.

[0062] In this embodiment, the first connection line 410 and the second connection line 420 are of the same type, which are bonding wires, which can further improve the balance of the differential amplifier module 300. Using the wiring on the substrate 100 as the third connection line can avoid the messy layout caused by too many bonding wires, making the layout of the RF front-end module more neat and compact.

[0063] As an implementation, see Figure 4 , the first power port 110b is connected to the first feeding node 120b through the third connecting line 430b, the first feeding node 120b is connected to the output end 310b of the first amplifier circuit of the differential amplifier module 300b through the first connecting line 410b, and the first feeding node 120b is connected to the output end 320b of the second amplifier circuit of the differential amplifier module 300b through the second connecting line 420b. The first connecting line 410b and the second connecting line 420b are bonding wires, respectively, and the third connecting line 430b is a routing line on the substrate 100. This embodiment is not only simple in structure and convenient for wiring and layout, but also the first connecting line 410b and the second connecting line 420b are of the same type, respectively bonding wires, which can further improve the balance of the differential amplifier module 300b.

[0064] In some embodiments, see Figure 3 As shown, the first-stage power amplifier module is configured as a differential amplifier module 300a, and the remaining power amplifier modules are configured as single-ended amplifier modules, which is conducive to simplifying the circuit structure and can make the structure of the RF power amplifier chip 200 more compact, thereby effectively reducing the area of ​​the RF power amplifier chip 200. Among them, the single-ended amplifier module and the differential amplifier module 300a are sequentially connected between the signal input port RFi n and the signal output port RFout.

[0065] In this embodiment, the last-stage power amplifier module is configured as a differential amplifier module 300 a , which is beneficial to reducing the area of ​​the RF power amplifier chip 200 .

[0066] As an implementation, see Figure 3 As shown, the RF power amplifier chip 200 includes three-stage power amplifier modules, namely a single-ended amplifier module 600a, a single-ended amplifier module 600b and a differential amplifier module 300a, wherein the single-ended amplifier module 600a is a first-stage power amplifier module, the single-ended amplifier module 600b is a second-stage power amplifier module, and the differential amplifier module 300a is a third-stage power amplifier module.

[0067] In this embodiment, the first-stage power amplifier module is configured as a differential amplifier module 300, and the remaining two-stage power amplifier modules are configured as single-ended amplifier modules, which is conducive to simplifying the circuit structure and making the RF power amplifier chip 200 more compact, thereby effectively reducing the area of ​​the RF power amplifier chip 200. Moreover, configuring the last-stage power amplifier module as a differential amplifier module 300a is conducive to improving the output power of the RF power amplifier chip 200.

[0068] As an implementation manner, the substrate 100 is further provided with a second power port corresponding to each single-ended amplifier module, and the output end of the single-ended amplifier module is connected to the corresponding second power port.

[0069] In this embodiment, the number of the second power ports is equal to the number of the single-ended amplifier modules. Each single-ended amplifier module corresponds to a second power port, and the second power port can be set according to actual needs to avoid a messy layout caused by too long bonding wires or routing lines, making the layout of the RF front-end module more neat.

[0070] In some embodiments, the RF front-end module further includes a feedback module connected between the output terminal and the input terminal of the single-ended amplifier module. The feedback module introduces negative feedback to improve the stability of the RF power amplifier chip 200.

[0071] As an implementation method, a feedback module can be provided between the output end and the input end of each stage of the single-ended amplifier module. Figure 3 The RF front-end module also includes a first feedback module 700a and a second feedback module 700b. The first feedback module 700a is connected between the output end and the input end of the single-ended amplifier module 600a, and the second feedback module 700b is connected between the output end and the input end of the single-ended amplifier module 600b. Negative feedback is introduced by the first feedback module 700a and the second feedback module 700b, so that the stability of the RF power amplifier chip 200 can be improved.

[0072] As an implementation mode, a feedback module is only provided between the input and output ends of some single-ended amplifier modules. For example, a feedback module is provided between the output and input ends of the first-stage single-ended amplifier module, while no feedback module may be provided between the output and input ends of the second-stage single-ended amplifier module, so as to improve the working efficiency of the RF power amplifier chip 200.

[0073] As an implementation, see Figure 4 The RF front-end module also includes an output balun 500, and the last differential amplifier module 300c is connected to the output balun 500. The middle node of the primary winding of the output balun 500 is configured as the first feeding node 120c of the last differential amplifier module 300c. The primary winding includes a first part 510 and a second part 520. Among them, the coil between the middle node and one end of the primary winding is the first part 510, and the coil between the middle node and the other end of the primary winding is the second part 520. The first connecting line 410c includes the first part 510 of the primary winding, and the second connecting line 420c includes the second part 520 of the primary winding.

[0074] In this embodiment, the first part 510 of the primary winding is used as a part of the first connecting line 410c, and the second part 520 of the primary winding is used as a part of the second connecting line 420c. This can not only ensure the balance of the differential amplifier module 300c, but also help to simplify the circuit structure and line layout, making the layout of the RF front-end module more neat and compact.

[0075] As an implementation, see Figure 5 As shown, the RF power amplifier chip 200 includes two-stage power amplifier modules, namely, a differential amplifier module 300b and a differential amplifier module 300c, wherein the differential amplifier module 300b is a first-stage power amplifier module, and the differential amplifier module 300c is a second-stage power amplifier module. Two first power ports 110 are provided on the substrate 100, namely, a first power port 110b and a first power port 110c. Two first feed nodes 120 are also provided on the substrate 100, namely, a first feed node 120b and a first feed node 120c. Among them, the differential amplifier module 300b corresponds to the first feed node 120b and the first power port 110b, and the differential amplifier module 300c corresponds to the first feed node 120c and the first power port 110c.

[0076] In this implementation, see Figure 4 As shown, the first power port 110b is connected to the first feeding node 120b through the third connecting line 430b, the first feeding node 120b is connected to the output end 310b of the first amplifier circuit of the differential amplifier module 300b through the first connecting line 410b, and the first feeding node 120b is connected to the output end 320b of the second amplifier circuit of the differential amplifier module 300b through the second connecting line 420b. The first connecting line 410b and the second connecting line 420b are respectively bonding wires, and the third connecting line 430b is a routing line on the substrate 100. Not only is the structure simple, it is convenient for wiring and layout, and the first connecting line 410b and the second connecting line 420b are of the same type, respectively bonding wires, which can further improve the balance of the differential amplifier module 300b.

[0077] In this implementation, see Figure 4As shown, the first power port 110c is connected to the first feed node 120c through the third connection line 430c, and the third connection line 430c is a bonding wire. The first feed node 120c is connected to the output end 310c of the first amplifier circuit of the differential amplifier module 300c through the first connection line 410c, and the first feed node 120c is connected to the output end 320c of the second amplifier circuit of the differential amplifier module 300c through the second connection line 420c. The first connection line 410c includes a first portion 510 of the primary winding, and a fifth connection portion 413, and the fifth connection portion 413 is configured to connect one end of the primary winding and the output end 310c of the first amplifier circuit of the differential amplifier module 300c. The second connection line 420c includes a second portion 520 of the primary winding, and a sixth connection portion 423, and the sixth connection portion 423 is configured to connect the other end of the primary winding and the output end 320c of the second amplifier circuit of the differential amplifier module 300c. The fifth connection part 413 and the sixth connection part 423 are bonding wires. The design of the above-mentioned feeding path can not only ensure the balance of the differential amplifier module 300c, but also help simplify the circuit structure, reduce redundant bonding wires or substrate routing, and make the layout of the RF front-end module more neat and compact.

[0078] In some embodiments, the RF front-end module also includes an input matching module 800. The RF signal output by the front-end circuit is transmitted to the RF front-end module via the signal input port RFi n. The input matching module 800 is connected between the signal input port RFi n and the first-stage power amplifier module, so that the first-stage power amplifier module is adapted to the front-stage circuit. For example, the input matching module 800 can match the impedance of the output end of the front-stage circuit with the impedance of the input end of the first-stage power amplifier module, thereby reducing the loss of the RF signal during transmission to the power amplifier module of the first stage, which is conducive to the effective transmission of the RF signal. Further, when the front-stage circuit is a single-ended output circuit, and the first-stage power amplifier module of the RF power amplifier chip is a differential amplifier module, the input matching module 800 may include an input balun, by means of which, while performing impedance matching, the balanced-unbalanced conversion of the RF signal can also be achieved.

[0079] As an implementation, see Figure 3 As shown, the RF front-end module includes an input matching module 800, which is connected between the signal input port RFi n and the single-ended amplifier module 600a. In this embodiment, the input matching module 800 can match the impedance of the output end of the pre-stage circuit with the impedance of the input end of the single-ended amplifier module 600a, thereby reducing the loss of the RF signal during transmission to the single-ended amplifier module 600a, which is conducive to the effective transmission of the RF signal.

[0080] As an implementation, please refer to FIG. 5 , the RF front-end module includes an input matching module 800, and the input matching module 800 is connected between the signal input port RFi n and the differential amplifier module 300b. In this implementation, the input matching module 800 can not only match the impedance of the output end of the pre-stage circuit with the impedance of the input end of the differential amplifier module 300b, thereby reducing the loss of the RF signal during transmission to the differential amplifier module 300b, and facilitating the effective transmission of the RF signal. In addition, the input matching module 800 can also realize balanced-unbalanced conversion, converting the single-ended signal into a differential signal matching the differential amplifier module 300b.

[0081] In some embodiments, the RF front-end module may further include an interstage matching module. The interstage matching module is connected between two adjacent power amplifier modules so that the previous power amplifier module is adapted to the next circuit. For example, the interstage matching module can match the impedance of the output end of the previous circuit with the impedance of the input end of the next power amplifier module, thereby reducing the loss of the RF signal during transmission to the next power amplifier module, which helps to effectively transmit the RF signal. For example, the interstage matching module can achieve balanced-unbalanced conversion.

[0082] As an implementation, see Figure 3 As shown, the RF front-end module includes a first inter-stage matching module 900a and a second inter-stage matching module 900b, wherein the first inter-stage matching module 900a is connected between the single-ended amplification module 600a and the single-ended amplification module 600b, and the second inter-stage matching module 900b is connected between the single-ended amplification module 600b and the differential amplification module 300a. In this embodiment, the first inter-stage matching module 900a can match the impedance of the output end of the single-ended amplification module 600a with the impedance of the input end of the single-ended amplification module 600b, and the second inter-stage matching module 900b can match the impedance of the output end of the single-ended amplification module 600b with the impedance of the input end of the differential amplification module 300a, thereby reducing the loss during the transmission of the RF signal and facilitating the effective transmission of the RF signal. Furthermore, the second inter-stage matching module 900b may include an inter-stage balun, by means of which, while performing impedance matching, balanced-unbalanced conversion can also be achieved, converting the single-ended signal output by the single-ended amplification module 600b into a differential signal matching the differential amplification module 300a.

[0083] As an implementation, see Figure 5As shown, the RF front-end module includes an inter-stage matching module 900c, which is connected between the differential amplifier module 300b and the differential amplifier module 300c. In this embodiment, the inter-stage matching module 900c can match the impedance of the output end of the differential amplifier module 300b with the impedance of the input end of the differential amplifier module 300c, thereby reducing the loss during the transmission of the RF signal and facilitating the effective transmission of the RF signal.

[0084] In some embodiments, the RF front-end module also includes an output matching module 1000. The RF signal output by the RF front-end module is transmitted to the subsequent circuit via the signal output port RFout. The output matching module 1000 is connected between the last-stage power amplifier module and the signal output port RFout, so that the last-stage power amplifier module is adapted to the subsequent circuit. For example, the output matching module 1000 can match the impedance of the output end of the power amplifier module of the last stage with the impedance of the input end of the subsequent circuit, thereby reducing the loss of the RF signal during transmission to the subsequent circuit, which is conducive to the effective transmission of the RF signal. Furthermore, when the last-stage power amplifier module is a differential amplifier module 300 and the subsequent circuit is a single-ended input circuit, the output matching module 1000 may include an output balun, which can achieve balanced-unbalanced conversion while performing impedance matching through the output balun.

[0085] As an implementation, see Figure 3 As shown, the RF front-end module includes an output matching module 1000, which is connected between the differential amplifier module 300a and the signal output port RFout. In this embodiment, the output matching module 1000 can match the impedance of the output end of the differential amplifier module 300a with the impedance of the input end of the subsequent circuit, thereby reducing the loss during the transmission of the RF signal and facilitating the effective transmission of the RF signal.

[0086] As an implementation, see Figure 5 As shown, the RF front-end module includes an output matching module 1000, and the output matching module 1000 is connected between the differential amplifier module 300c and the signal output port RFout. In this embodiment, the output matching module 1000 can match the impedance of the output end of the differential amplifier module 300c with the impedance of the input end of the subsequent circuit, thereby reducing the loss during the transmission of the RF signal and facilitating the effective transmission of the RF signal. Moreover, the output matching module 1000 may include a balun, which can achieve balanced-unbalanced conversion while performing impedance matching through the balun, and convert the differential signal output by the differential amplifier module 300c into a single-ended signal that matches the subsequent circuit.

[0087] In some embodiments, the RF front-end module of the present application may also include at least one component such as a low-noise amplifier, a coupler, a filter, a duplexer, etc. By integrating the power amplifier and at least one of the above components into a package, the integration and hardware performance can be improved and the size can be miniaturized.

[0088] Optionally, the RF front-end module can be applied to communication devices such as smart phones, tablet computers, and smart watches. The RF front-end module is, for example, a RF front-end module applied to communication devices such as LTE (Long Term Evolution, LTE for short), 4G, 5G (5th Generation Mobile Communications Technology), and Wi-Fi. Exemplarily, the RF front-end module of the embodiment of the present application can be applied to the transmission and reception of Wi-Fi signals. By adopting a differential amplifier module and improving the balance of the feeding path of the differential amplifier module 300, the transmission performance of the Wi-Fi signal can be improved.

[0089] The above is only an implementation method of the present application. It should be pointed out that a person skilled in the art can make improvements without departing from the inventive concept of the present application, but these improvements are within the scope of protection of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: A substrate and a radio frequency power amplifier chip arranged on the substrate; The radio frequency power amplifier chip includes a differential amplifier module, the differential amplifier module includes a first amplifier circuit and a second amplifier circuit, and the output end of the first amplifier circuit and the output end of the second amplifier circuit are symmetrically arranged about a first straight line axis; The substrate is provided with a first power port and a first feeding node connected to the first power port, and the first feeding node is located on the first straight line; The output end of the first amplifier circuit is connected to the first feeding node through a first connecting line, and the output end of the second amplifier circuit is connected to the first feeding node through a second connecting line, wherein the first connecting line and the second connecting line are symmetrically arranged about the first straight line axis.

2. The RF front-end module according to claim 1, characterized in that: The substrate is also provided with a second feeding node and a third feeding node which are symmetrically arranged about the first straight line axis; The first connecting line includes a first connecting portion connecting the first feeding node and a second feeding node, and a second connecting portion connecting the second feeding node and an output end of the first amplifying circuit; The second connecting line includes a third connecting portion connecting the first feeding node and a third feeding node, and a fourth connecting portion connecting the third feeding node and an output end of the second amplifying circuit; The first connection portion and the third connection portion are symmetrically arranged about the first straight line axis, and the second connection portion and the fourth connection portion are symmetrically arranged about the first straight line axis.

3. The RF front-end module according to claim 2, characterized in that: The RF power amplifier chip has a first side and a second side that are arranged opposite to each other, the second feeding node is located on the extension line of the first side and is arranged close to the first side, and the third feeding node is located on the extension line of the second side and is arranged close to the second side.

4. The RF front-end module according to claim 2, characterized in that: The first power port is connected to the first feeding node via a third connecting line; The first connection portion and the third connection portion are respectively routing lines on the substrate, and the second connection portion, the fourth connection portion and the third connection wire are respectively bonding wires.

5. The RF front-end module according to claim 1, wherein: The substrate is also provided with a signal input port and a signal output port; The radio frequency power amplifier chip includes a multi-stage power amplifier module connected between the signal input port and the signal output port; Among them, at least one stage of the power amplification module is configured as the differential amplification module.

6. The RF front-end module according to claim 5, characterized in that: At least two of the first power supply ports and at least two of the first feeding nodes are provided on the substrate, and at least two stages of the power amplification modules are configured as the differential amplification modules; Each of the differential amplifier modules corresponds to a first feeding node and a first power port, and each of the differential amplifier modules is connected to a corresponding first power port through a corresponding first feeding node.

7. The RF front-end module according to claim 6, characterized in that: At least one of the first power ports is connected to the corresponding first feeding node via a third connecting line; The first connection line and the second connection line are bonding wires respectively, and the third connection line is a routing line on the substrate.

8. The RF front-end module according to claim 5, characterized in that: The first-stage power amplifier module is configured as the differential amplifier module, and the remaining power amplifier modules are configured as single-ended amplifier modules; The single-ended amplification module and the differential amplification module are sequentially connected between the signal input port and the signal output port.

9. The RF front-end module according to claim 8, characterized in that: The substrate is also provided with a second power supply port corresponding to each of the single-ended amplifier modules, and the output end of the single-ended amplifier module is connected to the corresponding second power supply port.

10. The radio frequency front-end module according to claim 5, characterized in that: The RF front-end module also includes an output balun, and the last-stage differential amplifier module is connected to the output balun; The intermediate node of the primary winding of the output balun is configured as the first feeding node of the last-stage differential amplifier module, and the primary winding includes a first part between the intermediate node and one end of the primary winding, and a second part between the intermediate node and the other end of the primary winding; the first connecting line includes the first part of the primary winding, and the second connecting line includes the second part of the primary winding.

11. The radio frequency front-end module according to claim 5, characterized in that: The RF front-end module also includes an input matching module, an inter-stage matching module, and an output matching module. The input matching module is connected between the signal input port and the power amplification module, the inter-stage matching module is connected between two adjacent power amplification modules, and the output matching module is connected between the power amplification module and the signal output port.

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