Tail gas treatment pipeline and semiconductor furnace tube equipment

Abstract

The utility model provides a tail gas treatment pipeline and semiconductor furnace tube equipment, the tail gas treatment pipeline is applied to the semiconductor furnace tube equipment, the tail gas treatment pipeline comprises a pipeline body, a gas inlet and a heating piece; wherein the pipeline body is internally provided with a gas channel, the gas channel is provided with a gas inlet end and a gas outlet end which are opposite to each other, and the gas inlet end is used for introducing tail gas containing to-be-treated substances; the gas inlet is formed in the pipeline body, is communicated with the gas channel and is used for introducing reaction gas into the gas channel; the heating piece is arranged on the pipeline body and is used for heating the reaction gas and the tail gas in the gas channel, so that to-be-treated substances in the reaction gas and the tail gas are subjected to chemical reaction at the reaction temperature; the gas outlet end is used for discharging gas after the reaction gas and the to-be-treated substance are subjected to chemical reaction. The to-be-treated substance can be prevented from blocking the tail gas treatment pipeline, and the risk of pipeline blocking is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an exhaust gas treatment pipeline and semiconductor furnace tube equipment. Background Art

[0002] Furnace is a kind of equipment widely used in semiconductor process for oxidation, diffusion, thin film growth, annealing, alloying and other processes. It is divided into two types: horizontal and vertical.

[0003] In the related art, the unreacted TEOS (tetraethoxysilane, also known as tetraethyl silicate, with a chemical formula of C8H 20 O4Si) is discharged from the tail gas pipeline of the furnace tube equipment.

[0004] However, incompletely reacted TEOS can easily cause blockage of the exhaust pipe.

[0005] In view of the existence of the above technical problems, the utility model provides a new tail gas treatment pipeline and semiconductor furnace tube equipment to at least partially solve the above problems. Utility Model Content

[0006] A series of simplified concepts are introduced in the utility model content section, which will be further described in detail in the detailed implementation section. The utility model content section of the utility model does not mean to attempt to define the key features and essential technical features of the technical solution claimed for protection, nor does it mean to attempt to determine the scope of protection of the technical solution claimed for protection.

[0007] In view of the existing problems, the utility model provides a tail gas treatment pipeline, which is applied to semiconductor furnace tube equipment. The tail gas treatment pipeline includes:

[0008] A pipeline body, wherein the pipeline body has a gas channel, the gas channel has an air inlet end and an air outlet end opposite to each other, the air inlet end is used to pass tail gas containing the substance to be treated;

[0009] an air inlet, disposed on the pipeline body and in communication with the gas channel, for introducing reaction gas into the gas channel;

[0010] a heating element, disposed on the pipeline body, for heating the reaction gas and the tail gas in the gas channel so that the reaction gas and the substance to be treated in the tail gas undergo a chemical reaction when they are at a reaction temperature;

[0011] The gas outlet is used to discharge the gas after the reaction gas and the substance to be processed undergo a chemical reaction.

[0012] In some embodiments of the present application,

[0013] The substance to be treated includes tetraethoxysilane;

[0014] The reaction gas includes oxygen.

[0015] In some embodiments of the present application, the heating element includes a heating wire, the heating wire is configured as a spiral structure, and the heating wire is sleeved on the pipeline body.

[0016] In some embodiments of the present application, the exhaust gas treatment pipeline further includes a temperature detection element, which is disposed on the pipeline body and is used to detect the temperature in the gas channel.

[0017] In some embodiments of the present application, the reaction temperature is 200°C to 400°C.

[0018] In some embodiments of the present application, the exhaust gas treatment pipeline further includes a one-way valve connected to the air inlet, and the one-way valve is used to limit the flow direction of the reaction gas.

[0019] In some embodiments of the present application, the air inlet is arranged close to the air inlet end.

[0020] In some embodiments of the present application, the pipeline body is an overpressure pipeline.

[0021] In some embodiments of the present application, the pipeline body is L-shaped.

[0022] According to another aspect of the present application, a semiconductor furnace tube device is provided, and the semiconductor furnace tube device includes any one of the above-mentioned exhaust gas treatment pipelines.

[0023] According to the exhaust gas treatment pipeline and semiconductor furnace tube equipment of the embodiments of the present application, the reaction gas is introduced into the gas channel through the air inlet, and the heating element heats the reaction gas and the exhaust gas containing the substance to be treated in the gas channel. When the temperature is at the reaction temperature, the reaction gas can chemically react with the substance to be treated, and then the gas after the chemical reaction between the reaction gas and the substance to be treated can be discharged through the gas outlet end of the gas channel, thereby avoiding the substance to be treated from clogging the exhaust gas treatment pipeline and reducing the risk of pipeline clogging. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The following drawings of the present invention are used as a part of the present invention for understanding the present invention. The drawings show the embodiments of the present invention and their descriptions, and are used to explain the principle of the present invention.

[0025] Figure 1 The schematic diagram of the structure of the tail gas treatment pipeline of one embodiment of the utility model is shown.

[0026] Figure 2 The schematic diagram of the structure of a semiconductor furnace tube device according to an embodiment of the utility model is shown.

[0027] Figure 3 Shows Figure 2 Schematic diagram of the structure of area A in the middle.

[0028] In the attached figure:

[0029] 100 exhaust gas treatment pipeline;

[0030] 110 pipeline body;

[0031] 120 gas channel;

[0032] 130 Air intake;

[0033] 140 heating element;

[0034] 150 temperature detection element;

[0035] 160 Check valve. DETAILED DESCRIPTION

[0036] In the following description, a large number of specific details are given to provide a more thorough understanding of the utility model. However, it is obvious to those skilled in the art that the utility model can be implemented without one or more of these details. In other examples, in order to avoid confusion with the utility model, some technical features known in the art are not described.

[0037] It should be understood that the utility model can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and fully convey the scope of the utility model to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0038] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0039] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0040] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present invention. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising" when used in this specification determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0041] In the related art, the unreacted TEOS (tetraethoxysilane, also known as tetraethyl silicate, with a chemical formula of C8H 20 O4Si) is discharged from the tail gas pipeline of the furnace tube equipment.

[0042] However, incompletely reacted TEOS can easily cause blockage of the tail gas pipeline, resulting in at least the following problems:

[0043] Increase the frequency of PM cleaning of the exhaust pipe, and reduce the success rate of PM.

[0044] The valve on the exhaust pipe needs to be disassembled several times to clean the exhaust pipe. The valve is easily slipped between the exhaust pipe due to repeated disassembly and assembly.

[0045] When backfilling (Back Fill) of furnace tube equipment with tail gas pipeline blockage, the particles blocked in the tail gas pipeline are likely to pose a risk to the yield of the product.

[0046] In order to solve at least one of the above problems, the present application provides an exhaust gas treatment pipeline, which is applied to semiconductor furnace tube equipment, and the exhaust gas treatment pipeline includes: a pipeline body, wherein the pipeline body has a gas channel, and the gas channel has a relative air inlet end and a gas outlet end, and the air inlet end is used to pass the exhaust gas containing the substance to be treated; an air inlet, which is arranged on the pipeline body and connected to the gas channel, and is used to pass the reaction gas into the gas channel; a heating element, which is arranged on the pipeline body, and is used to heat the reaction gas and the exhaust gas in the gas channel, so that the reaction gas and the substance to be treated in the exhaust gas undergo a chemical reaction when they are at the reaction temperature; the gas outlet end is used to discharge the gas after the chemical reaction between the reaction gas and the substance to be treated.

[0047] According to the exhaust gas treatment pipeline of the present application, the reaction gas is introduced into the gas channel through the air inlet, and the heating element heats the reaction gas and the exhaust gas containing the substance to be treated in the gas channel. When the temperature is at the reaction temperature, the reaction gas can chemically react with the substance to be treated, and then the gas after the chemical reaction between the reaction gas and the substance to be treated can be discharged through the gas outlet end of the gas channel, thereby avoiding the substance to be treated from clogging the exhaust gas treatment pipeline and reducing the risk of pipeline clogging.

[0048] In order to thoroughly understand the present invention, detailed steps and structures will be presented in the following description to illustrate the technical solution proposed by the present invention. The preferred embodiments of the present invention are described in detail below, but in addition to these detailed descriptions, the present invention may also have other implementations.

[0049] Reference below Figure 1The tail gas treatment pipeline 100 according to one embodiment of the present application is described. The tail gas treatment pipeline 100 is applied to semiconductor furnace tube equipment, and the tail gas treatment pipeline 100 includes: a pipeline body 110, an air inlet 130 and a heating element 140; wherein the pipeline body 110 has a gas channel 120, and the gas channel 120 has a relative air inlet end and an air outlet end, and the air inlet end is used to pass the tail gas containing the substance to be treated; the air inlet 130 is arranged on the pipeline body 110 and communicated with the gas channel 120, and is used to pass the reaction gas into the gas channel 120; the heating element 140 is arranged on the pipeline body 110, and is used to heat the reaction gas and the tail gas in the gas channel 120, so that the reaction gas and the substance to be treated in the tail gas undergo a chemical reaction when they are at the reaction temperature; the air outlet end is used to discharge the gas after the reaction gas and the substance to be treated undergo a chemical reaction.

[0050] Specifically, the exhaust gas containing the substance to be treated is introduced into the air inlet end of the gas channel 120, and the reaction gas is introduced into the air inlet 130 connected to the gas channel 120, and the reaction gas and the exhaust gas containing the substance to be treated in the gas channel 120 are heated by the heating element 140. When the temperature is at the reaction temperature, the reaction gas chemically reacts with the substance to be treated in the exhaust gas, and the gas after the chemical reaction between the reaction gas and the substance to be treated can be discharged from the air outlet end of the gas channel 120, thereby avoiding the substance to be treated from clogging the exhaust gas treatment pipeline 100 and reducing the risk of pipeline clogging.

[0051] Since the risk of pipeline blockage is reduced, the number of regular maintenance and cleaning times of the exhaust gas treatment pipeline 100 can be reduced, thereby improving the success rate of regular maintenance; moreover, since the number of cleaning times is reduced, thread slippage between the valve and the exhaust gas pipeline caused by multiple valve disassembly can be avoided; moreover, the yield rate of the product when the furnace tube equipment is backfilled can be improved.

[0052] Based on this, the present application provides an exhaust gas treatment pipeline 100 that can reduce the risk of blockage. According to the exhaust gas treatment pipeline 100 of the present application, the reaction gas is introduced into the gas channel 120 through the air inlet 130, and the heating element 140 heats the reaction gas and the exhaust gas containing the substance to be treated in the gas channel 120. When the temperature is at the reaction temperature, the reaction gas can react chemically with the substance to be treated, and then the gas after the chemical reaction between the reaction gas and the substance to be treated can be discharged through the gas outlet end of the gas channel 120, thereby avoiding the substance to be treated from blocking the exhaust gas treatment pipeline 100 and reducing the risk of pipeline blockage.

[0053] In some embodiments, the phase of the substance to be treated contained in the tail gas may be one or more of a solid phase, a liquid phase and a gas phase, which is not limited.

[0054] In some embodiments, the substance to be treated contained in the tail gas may be tetraethoxysilane, and the reaction gas introduced through the air inlet may be oxygen. When the temperature is at the reaction temperature, tetraethoxysilane and oxygen undergo the following chemical reaction:

[0055] TEOS+O2→SIO2+C2H4(byproduct)+H2O,

[0056] C2H4+O2→CO2+H2O.

[0057] Among them, gases such as CO2 and H2O generated after the reaction can be discharged from the gas outlet end of the gas channel 120, and SIO2 (powder) generated after the reaction can settle at the bottom of the pipeline body 110, thereby avoiding the waste gas treatment pipeline 100 from being blocked by the substances to be treated and reducing the risk of pipeline blockage.

[0058] It should be noted that some of the unreacted reaction gas and the substances to be processed may also be discharged from the gas outlet end of the gas channel 120 .

[0059] Of course, the present application does not exclude that the substance to be treated and the reaction gas may also be other types of chemical substances, and no limitation is made to this.

[0060] In some embodiments, in order to ensure that the reaction gas can fully react with the substance to be treated contained in the exhaust gas, the air inlet 130 can be arranged close to the air inlet end, so that the substance to be treated contained in the exhaust gas can contact the reaction gas as much as possible in all strokes in the gas channel 120, and the substance to be treated in the exhaust gas can react with the reaction gas as much as possible, thereby improving the reaction efficiency and avoiding the residue of the substance to be treated.

[0061] In some embodiments, Figure 1 As shown, the tail gas treatment pipeline 100 further includes a one-way valve 160 connected to the gas inlet 130 , and the one-way valve 160 is used to limit the flow direction of the reaction gas.

[0062] Specifically, the reaction gas enters the inlet through the one-way valve 160, and then enters the gas channel 120, and reacts chemically with the substance to be treated in the tail gas when the temperature is at the reaction temperature. In the above process, the one-way valve 160 can prevent the reaction gas from flowing in reverse and avoid the reaction gas from flowing back.

[0063] In some embodiments, the heating element 140 may perform contact heating or non-contact heating on the pipeline body 110, which is not limited. When heated to the reaction temperature, the reaction gas and the substance to be treated in the tail gas may undergo a chemical reaction.

[0064] For example, Figure 1As shown, the heating element 140 may include a heating wire, the heating wire is configured as a spiral structure, and the heating wire is sleeved on the pipeline body 110 .

[0065] Specifically, by constructing the heating wire into a spiral structure and sleeved on the pipe body 110, the pipe body 110 can be heated evenly, so that the temperature of each part in the gas channel 120 is as uniform as possible, avoiding the situation where the local temperature is too high or too low, so as to improve the reaction efficiency.

[0066] Of course, according to actual conditions, the heating element 140 may also have other forms, which is not limited in this application.

[0067] In some embodiments, Figure 1 As shown, in order to sense the temperature in the gas channel 120 , the exhaust gas treatment pipeline 100 may further include a temperature detection element 150 . The temperature detection element 150 is disposed on the pipeline body 110 and is used to detect the temperature in the gas channel 120 .

[0068] The temperature detection element 150 may be a resistance thermometer, a thermocouple thermometer, a bimetallic thermometer, an expansion thermometer, etc., without limitation.

[0069] In some embodiments, the reaction temperature of the substance to be treated and the reaction gas may have different ranges depending on the specific substance types of the substance to be treated and the reaction gas. For example, when the substance to be treated is tetraethoxysilane and the reaction gas is oxygen, the reaction temperature may be 200°C to 400°C.

[0070] In some embodiments, the pipeline body 110 is an overpressure pipeline.

[0071] Among them, the overpressure pipeline is a pipeline specially used to handle excessive pressure, such as excessive temperature or pressure of gas or liquid. A series of special pipelines, valves, safety accessories and control systems are designed to protect the exhaust gas treatment pipeline 100 and personnel safety.

[0072] The overpressure pipeline can prevent the exhaust gas treatment pipeline 100 from being damaged under abnormally high pressure, or release the pressure in time when the high pressure reaches a dangerous level, so as to ensure the safe and stable operation of the exhaust gas treatment pipeline 100.

[0073] When the overpressure pipeline senses that the pressure in the pipeline exceeds a predetermined threshold, it can trigger corresponding actions, such as opening a valve, activating a safety discharge system, or activating a pressure relief device, to prevent the pressure from continuing to rise and causing potential hazards.

[0074] In some embodiments, Figure 3As shown, the pipe body 110 is L-shaped. Of course, the present application does not limit the pipe body 110 to other shapes.

[0075] According to another aspect of the present application, a semiconductor furnace tube device is provided, and the semiconductor furnace tube device includes an exhaust gas treatment pipeline.

[0076] Among them, the exhaust gas treatment pipeline can be implemented as the exhaust gas treatment pipeline 100 mentioned above, and reference can be made to the introduction above, which will not be repeated here.

[0077] The structure of semiconductor furnace tube equipment can be found in Figure 2 , Figure 3 Shows Figure 2 In the structural schematic diagram of area A, the exhaust gas treatment pipeline 100 can be located in area A.

[0078] To summarize, according to the exhaust gas treatment pipeline and semiconductor furnace tube equipment of the embodiments of the present application, the reaction gas is introduced into the gas channel through the air inlet, and the heating element heats the reaction gas and the exhaust gas containing the substance to be treated in the gas channel. When the temperature is at the reaction temperature, the reaction gas can chemically react with the substance to be treated, and then the gas after the chemical reaction between the reaction gas and the substance to be treated can be discharged through the gas outlet end of the gas channel, thereby avoiding the substance to be treated from clogging the exhaust gas treatment pipeline and reducing the risk of pipeline clogging.

[0079] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present application to this. Those of ordinary skill in the art may make various changes and modifications therein without departing from the scope and spirit of the present application. All these changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0080] Similarly, it should be understood that in order to streamline the present application and help understand one or more of the various application aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present application should not be interpreted as reflecting the following intention: the claimed application requires more features than the features clearly stated in each claim. More specifically, as reflected in the corresponding claims, the application point is that the corresponding technical problem can be solved with less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby explicitly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present application.

[0081] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0082] It should be noted that the above embodiments illustrate rather than limit the present application, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets should not be construed as a limitation to the claims. The use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names.

Claims

1. A tail gas treatment pipeline, characterized in that: Applied to semiconductor furnace tube equipment, the tail gas treatment pipeline includes: A pipeline body, wherein the pipeline body has a gas channel, the gas channel has an air inlet end and an air outlet end opposite to each other, the air inlet end is used to pass tail gas containing the substance to be treated; an air inlet, disposed on the pipeline body and in communication with the gas channel, for introducing reaction gas into the gas channel; a heating element, disposed on the pipeline body, for heating the reaction gas and the tail gas in the gas channel so that the reaction gas and the substance to be treated in the tail gas undergo a chemical reaction when they are at a reaction temperature; The gas outlet is used to discharge the gas after the reaction gas and the substance to be processed undergo a chemical reaction.

2. The tail gas treatment pipeline according to claim 1, characterized in that: The substance to be treated includes tetraethoxysilane; The reaction gas includes oxygen.

3. The tail gas treatment pipeline according to claim 1, characterized in that: The heating element comprises a heating wire, the heating wire is configured as a spiral structure, and the heating wire is sleeved on the pipeline body.

4. The tail gas treatment pipeline according to claim 1, characterized in that: The exhaust gas treatment pipeline further includes a temperature detection element, which is disposed on the pipeline body and is used to detect the temperature in the gas channel.

5. The tail gas treatment pipeline according to claim 1, characterized in that: The reaction temperature is 200°C to 400°C.

6. The tail gas treatment pipeline according to claim 1, characterized in that: The tail gas treatment pipeline further includes a one-way valve connected to the air inlet, and the one-way valve is used to limit the flow direction of the reaction gas.

7. The tail gas treatment pipeline according to claim 1, characterized in that: The air inlet is arranged close to the air inlet end.

8. The tail gas treatment pipeline according to claim 1, characterized in that: The pipeline body is an overpressure pipeline.

9. The tail gas treatment pipeline according to claim 1, characterized in that: The pipeline body is L-shaped.

10. A semiconductor furnace tube device, characterized in that: The semiconductor furnace tube equipment comprises the tail gas treatment pipeline according to any one of claims 1 to 9.

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