Semiconductor light-emitting element

Abstract

The utility model provides a semiconductor light-emitting element, which comprises a substrate, a first conductive semiconductor lower layer, a hole blocking layer, a first conductive semiconductor upper layer, an active layer, an electron blocking layer and a second conductive semiconductor which are sequentially arranged from bottom to top, the semiconductor light-emitting element has a refractive index coefficient gradient, a radiative recombination coefficient gradient and a density gradient; at least one hole barrier layer is arranged in the middle of the first conductive semiconductor; the active layer is of a quantum well structure composed of a well layer and a barrier layer, the quantum well structure comprises a first quantum well and a second quantum well, and the refractive index coefficient gradient, the radiative recombination coefficient gradient and the density gradient among the first conductive semiconductor, the hole blocking layer, the quantum well, the electron blocking layer and the second conductive semiconductor are designed. The aging light attenuation and the aging electric leakage of the semiconductor light-emitting element are improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor photoelectric devices, and in particular relates to a semiconductor light-emitting element. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting chips, have a wide adjustable wavelength range, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and grown into the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, Mini-LED, Micro-LED, mobile phone TV backlight, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting chips; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, and the quantum well layer and barrier layer of existing ultraviolet semiconductor light-emitting elements have many defects and poor quality, which are prone to aging light attenuation. In addition, the Si element in the quantum well layer and the Mg element in the p-type semiconductor layer are prone to element migration and diffusion and mixing under high temperature or long-term use, thereby causing aging light attenuation. The aging light attenuation of 1000H is generally above 30%, or even above 50%, and the leakage current of existing semiconductor elements after aging and leakage for 1000 hours is generally above 5μA, which reduces the service life of the element. Therefore, how to effectively reduce the aging light attenuation and aging leakage of semiconductor light-emitting elements has become a technical problem that needs to be urgently solved by technicians in this field. Summary of the invention

[0004] The purpose of the utility model is to provide a semiconductor light emitting element with simple structure and reasonable design in order to solve the above problems.

[0005] The utility model achieves the above-mentioned purpose through the following technical solutions:

[0006] A semiconductor light-emitting element comprises a substrate, a first conductive semiconductor lower layer, a hole blocking layer, a first conductive semiconductor upper layer, an active layer, an electron blocking layer and a second conductive semiconductor arranged in sequence from bottom to top, the semiconductor light-emitting element having a refractive index coefficient gradient, a radiation recombination coefficient gradient and a density gradient; wherein there is at least one hole blocking layer between the first conductive semiconductor upper layer and the first conductive semiconductor lower layer.

[0007] Furthermore, the active layer is a quantum well structure composed of a well layer and a barrier layer; the quantum well structure includes a first quantum well and a second quantum well;

[0008] Furthermore, the refractive index coefficient of the first conductive semiconductor is a, the refractive index coefficient of the hole blocking layer is b, the refractive index coefficient of the well layer of the first quantum well is c, the refractive index coefficient of the well layer of the second quantum well is d, the refractive index coefficient of the barrier layer of the second quantum well is f, and the refractive index coefficient of the electron blocking layer is g. The refractive index coefficients of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a refractive index coefficient gradient: g≤b≤a≤f≤c≤d.

[0009] Furthermore, the radiation recombination coefficient of the first conductive semiconductor is h, the radiation recombination coefficient of the hole blocking layer is i, the radiation recombination coefficient of the well layer of the first quantum well is j, the radiation recombination coefficient of the well layer of the second quantum well is k, the radiation recombination coefficient of the barrier layer of the second quantum well is l, and the radiation recombination coefficient of the electron blocking layer is m. The radiation recombination coefficients of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a radiation recombination coefficient gradient: m≤i≤h≤l≤j≤k.

[0010] Furthermore, the density of the first conductive semiconductor is n, the density of the hole blocking layer is o, the density of the well layer of the first quantum well is p, the density of the well layer of the second quantum well is q, the density of the barrier layer of the second quantum well is r, and the density of the electron blocking layer is s. The densities of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a density gradient: s≤o≤n≤r≤p≤q.

[0011] Furthermore, the semiconductor light emitting element also has a deformation potential gradient, a peak rate electric field gradient and a transverse sound velocity gradient.

[0012] Furthermore, the deformation potential of the first conductive semiconductor is t, the deformation potential of the hole blocking layer is u, the deformation potential of the well layer of the first quantum well is v, the deformation potential of the well layer of the second quantum well is w, the deformation potential of the barrier layer of the second quantum well is z, and the deformation potential of the electron blocking layer is A. The deformation potentials of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a deformation potential gradient: w≤v≤z≤t≤u≤A.

[0013] Further, the peak rate electric field of the first conductive semiconductor is B, the peak rate electric field of the hole blocking layer is C, the peak rate electric field of the well layer of the first quantum well is D, the peak rate electric field of the well layer of the second quantum well is E, the peak rate electric field of the barrier layer of the second quantum well is F, the peak rate electric field of the electron blocking layer is G, and the peak rate electric field of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a peak rate electric field gradient: E≤D≤F≤B≤C≤G;

[0014] Furthermore, the transverse sound velocity of the first conductive semiconductor is H, the transverse sound velocity of the hole blocking layer is I, the transverse sound velocity of the well layer of the first quantum well is J, the transverse sound velocity of the well layer of the second quantum well is K, the transverse sound velocity of the barrier layer of the second quantum well is L, and the transverse sound velocity of the electron blocking layer is M. The transverse sound velocities of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a transverse sound velocity gradient: K≤J≤L≤H≤I≤M.

[0015] Furthermore, the refractive index gradient of the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=N x -N -x (0<N<1) curve distribution; the radiation recombination coefficient gradient of the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=e x / l nx curve distribution; the density gradient at the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=x -P (P>1 odd number) first quadrant curve distribution;

[0016] Furthermore, the deformation potential gradient of the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=Q x -Q -x (Q>1) curve distribution; the peak rate electric field gradient at the interface between the first conductive semiconductor upper layer and the hole blocking layer has a function y=l nx+e x Curve distribution; the transverse acoustic velocity gradient at the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a curve distribution of function y=l nx+x;

[0017] Further, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, AlN, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the active layer is GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms. Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the barrier layer has a thickness of 10 to 400 angstroms;

[0018] The first conductive semiconductor, the second conductive semiconductor, the hole blocking layer, and the electron blocking layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the first conductive semiconductor is 5 to 60,000 angstroms; the thickness of the second conductive semiconductor is 10 to 9,000 angstroms;

[0019] The substrate is sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0020] The beneficial effects of the utility model are:

[0021] The utility model designs the refractive index gradient, radiation recombination coefficient gradient and density gradient between the first conductive semiconductor, the hole blocking layer, the quantum well, the electron blocking layer and the second conductive semiconductor to regulate the thermal stability of the quantum well of the semiconductor light-emitting element, inhibit the capture of carriers by the SRH defect thermal state, inhibit the Auger recombination-related defects of the quantum well, and reduce the Auger recombination ratio, thereby being able to inhibit the Auger recombination of the semiconductor light-emitting element under large current injection, and improve the aging light decay and aging leakage of the semiconductor light-emitting element;

[0022] By designing the deformation potential gradient, peak rate electric field gradient and lateral sound velocity gradient, the electron tunneling and hole tunneling probabilities of the quantum well are regulated, holes are blocked from escaping to the first conductive semiconductor layer and electrons are blocked from overflowing to the second conductive semiconductor, and the distribution of hole wave functions in the quantum well is regulated, thereby improving the electron-hole recombination efficiency in the quantum well and improving the internal quantum efficiency of the semiconductor light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic structural diagram of a semiconductor light emitting element according to an embodiment of the utility model;

[0024] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a semiconductor light-emitting element according to an embodiment of the utility model;

[0025] Figure 3 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element according to an embodiment of the utility model (partially enlarged view);

[0026] Figure 4 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting element according to an embodiment of the utility model (partially enlarged view);

[0027] Figure 5 This is a transmission electron microscope TEM image of a semiconductor light emitting element of an embodiment of the utility model;

[0028] Figure 6 This is a transmission electron microscope TEM image (partial enlarged image) of a semiconductor light-emitting element according to an embodiment of the utility model;

[0029] Figure 7 This is a transmission electron microscope TEM image (partial enlarged image) of a semiconductor light-emitting element according to an embodiment of the utility model;

[0030] Figure 8 This is a transmission electron microscope TEM image (partial enlarged image) of a semiconductor light-emitting element according to an embodiment of the utility model.

[0031] In the figure: 100, substrate; 101, first conductive type semiconductor; 101a, first conductive type semiconductor lower layer; 101b, first conductive type semiconductor upper layer; 102, hole blocking layer; 103, quantum well; 103a, first quantum well; 103b, second quantum well; 104, electron blocking layer; 105, second conductive type semiconductor. DETAILED DESCRIPTION

[0032] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0033] like Figure 1 As shown, this embodiment provides a semiconductor light-emitting element, including a substrate 100, a first conductive semiconductor 101, a hole blocking layer 102, an active layer, an electron blocking layer 104, and a second conductive semiconductor 105, which are arranged in sequence from bottom to top, wherein the first conductive semiconductor 101, the hole blocking layer 102, the active layer, the electron blocking layer 104, and the second conductive semiconductor 105 all have refractive index constant, radiation recombination constant and density constant characteristics, the first conductive semiconductor 101 is composed of a first conductive semiconductor lower layer 101a and a first conductive semiconductor upper layer 101b, and the hole blocking layer 102 is arranged between the first conductive semiconductor upper layer 101b and the first conductive semiconductor lower layer 101a.

[0034] Based on the characteristics of the refractive index constant, the radiation recombination constant and the density, this embodiment designs the refractive index coefficient gradient, the radiation recombination coefficient gradient and the density gradient among the first conductive semiconductor 101, the hole blocking layer 102, the quantum well 103, the electron blocking layer 104 and the second conductive semiconductor 105, so as to achieve the purpose of improving the aging light decay and aging leakage of the semiconductor light-emitting element.

[0035] In this embodiment, the refractive index coefficients of the first conductive semiconductor 101, the hole blocking layer 102, the quantum well 103, and the electron blocking layer 104 form a refractive index coefficient gradient: the refractive index coefficient of the electron blocking layer 104 ≤ the refractive index coefficient of the hole blocking layer 102 ≤ the refractive index coefficient of the first conductive semiconductor 101 ≤ the refractive index coefficient of the quantum well 103.

[0036] The radiation recombination coefficients of the first conductive semiconductor 101 , the hole blocking layer 102 , the quantum well 103 , and the electron blocking layer 104 form a radiation recombination coefficient gradient: the radiation recombination coefficient of the electron blocking layer 104 ≤ the radiation recombination coefficient of the hole blocking layer 102 ≤ the radiation recombination coefficient of the first conductive semiconductor 101 ≤ the radiation recombination coefficient of the quantum well 103 .

[0037] The densities of the first conductive semiconductor 101 , the hole blocking layer 102 , the quantum well 103 , and the electron blocking layer 104 form a density gradient: the density of the electron blocking layer 104 ≤ the density of the hole blocking layer 102 ≤ the density of the first conductive semiconductor 101 ≤ the density of the quantum well 103 .

[0038] In an alternative embodiment, if Figure 2-4 As shown, the active layer is a quantum well 103 composed of a well layer and a barrier layer, and the number of periods of the quantum well 103 is 1 to 50, wherein the quantum well 103 includes a first quantum well 103a and a second quantum well 103b, wherein the refractive index coefficients of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 form a refractive index gradient of: g≤b≤a≤f≤c≤d, wherein a is the refractive index coefficient of the first conductive semiconductor 101, b is the refractive index coefficient of the hole blocking layer 102, c is the refractive index coefficient of the well layer of the first quantum well 103a, d is the refractive index coefficient of the well layer of the second quantum well 103b, f is the refractive index coefficient of the barrier layer of the second quantum well 103b, and g is the refractive index coefficient of the electron blocking layer 104.

[0039] The radiation recombination coefficients of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 form a radiation recombination coefficient gradient: m≤i≤h≤l≤j≤k, wherein h is the radiation recombination coefficient of the first conductive semiconductor 101, i is the radiation recombination coefficient of the hole blocking layer 102, j is the radiation recombination coefficient of the well layer of the first quantum well 103a, k is the radiation recombination coefficient of the well layer of the second quantum well 103b, l is the radiation recombination coefficient of the barrier layer of the second quantum well 103b, and m is the radiation recombination coefficient of the electron blocking layer 104.

[0040] The densities of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 form a density gradient: s≤o≤n≤r≤p≤q, wherein n is the density of the first conductive semiconductor 101, o is the density of the hole blocking layer 102, p is the density of the well layer of the first quantum well 103a, q is the density of the well layer of the second quantum well 103b, r is the density of the barrier layer of the second quantum well 103b, and s is the density of the electron blocking layer 104.

[0041] By designing the refractive index gradient, radiation recombination coefficient gradient and density gradient among the first conductive semiconductor 101, the hole blocking layer 102, the quantum well 103, the electron blocking layer 104 and the second conductive semiconductor 105, the thermal stability of the quantum well of the semiconductor light-emitting element can be regulated, the carrier capture by the SRH defect hot state can be suppressed, the Auger recombination-related defects of the quantum well can be suppressed, the Auger recombination ratio can be reduced, and the Auger recombination of the semiconductor light-emitting element under large current injection can be suppressed, thereby improving the aging light decay and aging leakage of the semiconductor light-emitting element, and realizing that the 10000H aging light decay is reduced from 15-30% to 2-10%, and the 10000H aging leakage is reduced from + / -0.5-5uA to + / -0-0.5uA.

[0042] In an alternative embodiment, if Figure 5-8 As shown, the first conductive semiconductor 101, the hole blocking layer 102, the active layer, the electron blocking layer 104, and the second conductive semiconductor 105 also have a deformation potential gradient, a peak rate electric field gradient, and a transverse acoustic velocity gradient.

[0043] Specifically, the deformation potentials of the first conductive semiconductor 101 , the hole blocking layer 102 , the quantum well 103 , and the electron blocking layer 104 form a deformation potential gradient: the deformation potential of the quantum well 103 ≤ the deformation potential of the first conductive semiconductor 101 ≤ the deformation potential of the hole blocking layer 102 ≤ the deformation potential of the electron blocking layer 104 .

[0044] The peak rate electric fields of the first conductive semiconductor 101, the hole blocking layer 102, the quantum well 103, and the electron blocking layer 104 form a peak rate electric field gradient: the peak rate electric field of the quantum well 103 ≤ the peak rate electric field of the first conductive semiconductor 101 ≤ the peak rate electric field of the hole blocking layer 102 ≤ the peak rate electric field of the electron blocking layer 104.

[0045] The transverse sound velocities of the first conductive semiconductor 101 , the hole blocking layer 102 , the quantum well 103 , and the electron blocking layer 104 form a transverse sound velocity gradient: the transverse sound velocity of the quantum well 103 ≤ the transverse sound velocity of the first conductive semiconductor 101 ≤ the transverse sound velocity of the hole blocking layer 102 ≤ the transverse sound velocity of the electron blocking layer 104 .

[0046] In an optional embodiment, the deformation potential of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 forms a deformation potential gradient: w≤v≤z≤t≤u≤A, t is the deformation potential of the first conductive semiconductor, u is the deformation potential of the hole blocking layer, v is the deformation potential of the well layer of the first quantum well 103a, w is the deformation potential of the well layer of the second quantum well 103b, z is the deformation potential of the barrier layer of the second quantum well 103b, and A is the deformation potential of the electron blocking layer 104.

[0047] The peak rate electric field of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 forms a peak rate electric field gradient: E≤D≤F≤B≤C≤G, wherein B is the peak rate electric field of the first conductive semiconductor, C is the peak rate electric field of the hole blocking layer, D is the peak rate electric field of the well layer of the first quantum well 103a, E is the peak rate electric field of the well layer of the second quantum well 103b, F is the peak rate electric field of the barrier layer of the second quantum well 103b, and G is the peak rate electric field of the electron blocking layer 104;

[0048] The transverse sound velocities of the first conductive semiconductor 101, the hole blocking layer 102, the well layer of the first quantum well 103a, the well layer of the second quantum well 103b, the barrier layer of the second quantum well 103b, and the electron blocking layer 104 form a transverse sound velocity gradient: K≤J≤L≤H≤I≤M, wherein H is the transverse sound velocity of the first conductive semiconductor, I is the transverse sound velocity of the hole blocking layer, J is the transverse sound velocity of the well layer of the first quantum well 103a, K is the transverse sound velocity of the well layer of the second quantum well 103b, L is the transverse sound velocity of the barrier layer of the second quantum well 103b, and M is the transverse sound velocity of the electron blocking layer 104.

[0049] By designing the deformation potential gradient, peak rate electric field gradient and lateral sound velocity gradient, the electron tunneling and hole tunneling probabilities of the quantum well are regulated, holes are blocked from escaping to the first conductive semiconductor layer and electrons are blocked from overflowing to the second conductive semiconductor, and the distribution of hole wave functions in the quantum well is regulated, thereby improving the electron-hole recombination efficiency in the quantum well and the internal quantum efficiency of the semiconductor light-emitting element, achieving an increase in the internal quantum efficiency from 70-80% to 80-98%.

[0050] In an optional embodiment, the refractive index gradient of the interface between the first conductive type semiconductor upper layer 101b and the hole blocking layer 102 has a function y=N x -N -x(0<N<1) curve distribution; the radiation recombination coefficient gradient of the interface between the first conductive type semiconductor upper layer 101b and the hole blocking layer 102 has a function y=e x / l nx curve distribution; the density gradient of the interface between the first conductive type semiconductor upper layer 101b and the hole blocking layer 102 has a function y=x -P (P>1 odd number) first quadrant curve distribution;

[0051] The deformation potential gradient of the interface between the first conductive semiconductor upper layer 101b and the hole blocking layer 102 has a function y=Q x -Q -x (Q>1) curve distribution; the peak rate electric field gradient at the interface between the first conductive semiconductor upper layer 101b and the hole blocking layer 102 has a function y=l nx+e x Curved distribution; the lateral acoustic velocity gradient at the interface between the first conductive type semiconductor upper layer 101b and the hole blocking layer 102 has a curved distribution of the function y=l nx+x.

[0052] In an optional embodiment, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms; the barrier layer of the active layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms. Any one or any combination of InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the barrier layer has a thickness of 10 to 400 angstroms;

[0053] The first conductive semiconductor, the second conductive semiconductor, the hole blocking layer, and the electron blocking layer include any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the first conductive semiconductor is 5 to 60,000 angstroms; the thickness of the second conductive semiconductor is 10 to 9,000 angstroms;

[0054] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAl O2 and LiGaO2 composite substrates.

[0055] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model.

Claims

1. A semiconductor light emitting element, characterized in that: The invention comprises a substrate, a first conductive semiconductor, a hole blocking layer, an active layer, an electron blocking layer and a second conductive semiconductor arranged in sequence from bottom to top, wherein the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor have a refractive index coefficient gradient, a radiation recombination coefficient gradient and a density gradient; The hole blocking layer is provided as a layer, and the hole blocking layer is provided in the first conductive type semiconductor, and the first conductive type semiconductor is divided into a first conductive type semiconductor upper layer and a first conductive type semiconductor lower layer.

2. A semiconductor light emitting element as claimed in claim 1, characterized in that: The active layer is a quantum well structure composed of a well layer and a barrier layer, and the quantum well structure includes a first quantum well and a second quantum well.

3. A semiconductor light emitting element as claimed in claim 2, characterized in that: The refractive index coefficient of the first conductive semiconductor is a, the refractive index coefficient of the hole blocking layer is b, the refractive index coefficient of the well layer of the first quantum well is c, the refractive index coefficient of the well layer of the second quantum well is d, the refractive index coefficient of the barrier layer of the second quantum well is f, and the refractive index coefficient of the electron blocking layer is g. The refractive index coefficients of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a refractive index coefficient gradient: g≤b≤a≤f≤c≤d.

4. A semiconductor light emitting element as claimed in claim 3, characterized in that: The radiation recombination coefficient of the first conductive semiconductor is h, the radiation recombination coefficient of the hole blocking layer is i, the radiation recombination coefficient of the well layer of the first quantum well is j, the radiation recombination coefficient of the well layer of the second quantum well is k, the radiation recombination coefficient of the barrier layer of the second quantum well is l, and the radiation recombination coefficient of the electron blocking layer is m. The radiation recombination coefficients of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a radiation recombination coefficient gradient: m≤i≤h≤l≤j≤k.

5. A semiconductor light emitting element as claimed in claim 4, characterized in that: The density of the first conductive semiconductor is n, the density of the hole blocking layer is o, the density of the well layer of the first quantum well is p, the density of the well layer of the second quantum well is q, the density of the barrier layer of the second quantum well is r, and the density of the electron blocking layer is s. The densities of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a density gradient: s≤o≤n≤r≤p≤q.

6. A semiconductor light emitting element as claimed in claim 5, characterized in that: The refractive index gradient of the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=N x -N -x Curve distribution, where 0<N<1; The radiative recombination coefficient gradient of the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=e x / lnx curve distribution; The density gradient at the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=x -P The first quadrant curve is distributed; where P>1 and is an odd number.

7. A semiconductor light emitting element as claimed in claim 2, characterized in that: The first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor have a deformation potential gradient, a peak rate electric field gradient and a transverse sound velocity gradient.

8. A semiconductor light emitting element as claimed in claim 7, characterized in that: The deformation potential of the first conductive semiconductor is t, the deformation potential of the hole blocking layer is u, the deformation potential of the well layer of the first quantum well is v, the deformation potential of the well layer of the second quantum well is w, the deformation potential of the barrier layer of the second quantum well is z, the deformation potential of the electron blocking layer is A, and the deformation potentials of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a deformation potential gradient: w≤v≤z≤t≤u≤A; The peak rate electric field of the first conductive semiconductor is B, the peak rate electric field of the hole blocking layer is C, the peak rate electric field of the well layer of the first quantum well is D, the peak rate electric field of the well layer of the second quantum well is E, the peak rate electric field of the barrier layer of the second quantum well is F, the peak rate electric field of the electron blocking layer is G, and the peak rate electric fields of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a peak rate electric field gradient: E≤D≤F≤B≤C≤G; The transverse sound velocity of the first conductive semiconductor is H, the transverse sound velocity of the hole blocking layer is I, the transverse sound velocity of the well layer of the first quantum well is J, the transverse sound velocity of the well layer of the second quantum well is K, the transverse sound velocity of the barrier layer of the second quantum well is L, and the transverse sound velocity of the electron blocking layer is M. The transverse sound velocities of the first conductive semiconductor, the hole blocking layer, the active layer, the electron blocking layer and the second conductive semiconductor form a transverse sound velocity gradient: K≤J≤L≤H≤I≤M.

9. A semiconductor light emitting element as claimed in claim 8, characterized in that: The deformation potential gradient of the interface between the first conductive semiconductor upper layer and the hole blocking layer has a function y=Q x -Q -x Curved distribution, where Q>1; The peak rate electric field gradient at the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=lnx+e x Curve distribution; The transverse acoustic velocity gradient at the interface between the first conductive type semiconductor upper layer and the hole blocking layer has a function y=lnx+x curve distribution.

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