Power supply module with low on-resistance, voltage regulation device and electronic equipment

Abstract

The utility model discloses a low-on-resistance power supply module, a voltage regulation device and electronic equipment, the power supply module comprises a substrate, a first switch chip, a second switch chip and an inductor, the substrate is provided with an input interface and an output interface, the first switch chip and the second switch chip are arranged on the substrate, and the inductor is arranged on the substrate. The input end of the first switch chip is connected with the input interface through a first line arranged in the substrate; the input end of the second switch chip is connected with the output end of the first switch chip, and the output end of the second switch chip is grounded through a second line; the inductor is arranged above the first switch chip and the second switch chip, the two ends of the inductor are arranged on the substrate and located on the two sides of the first switch chip and the two sides of the second switch chip respectively, one end of the inductor is connected between the first switch chip and the second switch chip through a third line, and the other end of the inductor is connected with the output interface. According to the invention, the resistance generated during circuit conduction can be reduced, so that the output performance of the power supply is improved.

Description

Technical Field

[0001] The present application relates to the field of integrated power supply technology, and in particular to a power supply module with low on-resistance, a voltage regulating device and an electronic device. Background Art

[0002] DC-DC power supplies are currently mainly divided into three types: boost power supplies, buck power supplies, and boost-boost power supplies. From the previous discrete device solution to the current fully integrated solution, the area occupied by the circuit is getting smaller and smaller, and the power supply power is getting larger and larger. The power module is further packaged together through packaging technology on the basis of the fully integrated solution, with the advantages of high integration and small area. At present, the mainstream high-power power supply solutions on the market are mainly switching power supplies. Switching power supplies use MOS tubes, inductors, capacitors and other devices to build different topological structures to achieve the effect of boosting or bucking. High integration is the current market development trend. The fully integrated chip (referring to a chip that has integrated the controller, driver, and MOS tube) is the best example. In actual application, the Buck topology needs to be used with an inductor, and the routing path of the inductor from the chip determines the area and performance of the entire power supply solution.

[0003] Reference Figure 1 , for the existing step-down power supply regulation circuit, it generally includes an upper substrate and a lower substrate, the inductor device is arranged between the upper substrate and the lower substrate, the MOS switch chip is arranged on the upper surface of the upper substrate, and the input interface, output interface and ground terminal are all arranged on the lower substrate. Since the height of the inductor is usually relatively high, when in use, after the current enters from the lower substrate, it needs to pass through a longer conduction path to reach the MOS switch chip located on the upper substrate, which will cause the resistance from the input interface to the MOS switch chip to be larger. In addition, after the current passes through the MOS switch chip, it needs to pass through a longer conduction path to reach the ground terminal of the lower substrate, which will also cause the resistance from the MOS switch chip to the ground terminal to be larger. Reference Figure 2 ,exist Figure 2 In the solution, the distance between the upper substrate and the lower substrate is reduced, that is, the structure of the overall power regulation circuit will become thinner. Although the resistance mentioned above is reduced, the space of the inductor will be squeezed, resulting in insufficient inductor area, reduced inductance and saturation current capacity, and affecting the voltage conversion effect. Utility Model Content

[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a power supply module, a voltage regulator and an electronic device with low on-resistance, which can reduce the resistance generated when the circuit is turned on, thereby improving the output performance of the power supply.

[0005] In a first aspect, the present application provides a low on-resistance power module, comprising:

[0006] A substrate, wherein an input interface and an output interface are provided on the substrate;

[0007] a first switch chip, wherein the first switch chip is disposed on the substrate, and an input end of the first switch chip is connected to the input interface via a first circuit built into the substrate;

[0008] a second switch chip, the second switch chip being arranged on the substrate and being located beside the first switch chip, the input end of the second switch chip being connected to the output end of the first switch chip, and the output end of the second switch chip being grounded through a second circuit built into the substrate;

[0009] An inductor, wherein the inductor is arranged above the first switch chip and the second switch chip, and both ends of the inductor are arranged on the substrate, and the two ends of the inductor are respectively located on both sides of the first switch chip and the second switch chip, one end of the inductor is connected between the output end of the first switch chip and the input end of the second switch chip through a third circuit built into the substrate, and the other end of the inductor is connected to the output interface.

[0010] According to the low on-resistance power supply module of the first aspect of the present application, at least the following beneficial effects are achieved: the low on-resistance power supply module provided in the present application includes only one substrate, and the first switch chip and the second switch chip are arranged on the substrate. The input end of the first switch chip is connected to the input interface through the first circuit. Since the input interface and the first switch chip are arranged on the same substrate, the internal resistance generated by the first circuit will be smaller than that of the prior art. In addition, the output end of the second switch chip is grounded through the second circuit. Similarly, since it is also on the same substrate, the overall path of the second circuit is shorter, and the internal resistance generated is smaller than that of the prior art. Furthermore, one end of the inductor is connected between the first switch chip and the second switch chip through the third circuit. Also because it is on the same substrate, the internal resistance generated by the third circuit is smaller. The present application places the inductor frame higher than the first switch chip and the second switch chip, so that the inductor, the first switch chip and the second switch chip are all arranged on the same substrate, thereby reducing the paths of the first circuit, the second circuit and the third circuit to reduce their corresponding internal resistance, that is, the present application can reduce the resistance generated when the circuit is turned on, thereby improving the output performance of the power supply.

[0011] According to some embodiments of the first aspect of the present application, at least a first input capacitor and a second input capacitor are included, one end of the first input capacitor is connected to the input interface through a fourth circuit built into the substrate, and one end of the second input capacitor is connected to the input interface through a fifth circuit built into the substrate.

[0012] According to some embodiments of the first aspect of the present application, the inductor includes an inductor copper core, which is C-shaped, and two ends of the inductor copper core are respectively located on both sides of the first switch chip and the second switch chip, and the inductor copper core spans the first switch chip and the second switch chip.

[0013] According to some embodiments of the first aspect of the present application, a heat dissipation structure is further included, which is arranged between the first switch chip and the inductor, and between the second switch chip and the inductor. The heat dissipation structure is used to transfer to the outside the heat generated by the first switch chip, the second switch chip and the inductor during operation.

[0014] According to some embodiments of the first aspect of the present application, the heat dissipation structure includes at least two heat dissipation U-shaped frames, which are respectively mounted on both sides of the inductor, and the inner surfaces of the heat dissipation U-shaped frames are in contact with the surface of the inductor, the lower surface of one of the heat dissipation U-shaped frames is in contact with the upper surface of the first switch chip, and the lower surface of the other heat dissipation U-shaped frame is in contact with the upper surface of the second switch chip.

[0015] According to some embodiments of the first aspect of the present application, the first switch chip and the second switch chip are silicon back exposed structures, and the lower surface of the heat dissipation U-shaped frame is in contact with the silicon back exposed part of the first switch chip or the second switch chip.

[0016] According to some embodiments of the first aspect of the present application, the heat dissipation U-shaped frame is made of metal copper.

[0017] According to some embodiments of the first aspect of the present application, the first switch chip and the first input capacitor are wrapped by a plastic packaging material to form a first package, and the second switch chip and the second input capacitor are wrapped by a plastic packaging material to form a second package.

[0018] In a second aspect, the present application further provides a voltage regulation device, comprising a power supply module with low on-resistance as described in any one of the embodiments of the first aspect.

[0019] In a third aspect, the present application further provides an electronic device, comprising a power supply module with low on-resistance as described in any one of the embodiments of the first aspect.

[0020] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0022] Figure 1 It is a cross-sectional view of a power module in the prior art;

[0023] Figure 2 A cross-sectional view of another power module in the prior art;

[0024] Figure 3 A cross-sectional view of a power module provided in some embodiments of the first aspect of the present application;

[0025] Figure 4 A schematic diagram of the structure of a power supply module provided in some embodiments of the first aspect of the present application;

[0026] Figure 5 A partial structural schematic diagram of a power module provided in some embodiments of the first aspect of the present application;

[0027] Figure 6 An internal plan view of a first package and a second package of a power module provided in some embodiments of the first aspect of the present application;

[0028] Figure 7 This is a circuit diagram corresponding to the power supply module provided in some embodiments of the first aspect of the present application.

[0029] The figures are as follows:

[0030] Substrate 100 ; first input capacitor 110 ; second input capacitor 120 ; first switch chip 210 ; second switch chip 220 ; inductor 300 ; inductor copper core 310 ; heat dissipation U-shaped frame 400 ; first package 510 ; second package 520 . DETAILED DESCRIPTION

[0031] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0032] In the description of the present application, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0033] In the description of this application, if there is a description of first or second, it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0034] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0035] DC-DC power supplies are currently mainly divided into three types: boost power supplies, buck power supplies, and boost-boost power supplies. From the previous discrete device solution to the current fully integrated solution, the area occupied by the circuit is getting smaller and smaller, and the power supply power is getting larger and larger. The power module is further packaged together through packaging technology on the basis of the fully integrated solution, with the advantages of high integration and small area. At present, the mainstream high-power power supply solutions on the market are mainly switching power supplies. Switching power supplies use MOS tubes, inductors, capacitors and other devices to build different topological structures to achieve the effect of boosting or bucking. High integration is the current market development trend. The fully integrated chip (referring to a chip that has integrated the controller, driver, and MOS tube) is the best example. In actual application, the Buck topology needs to be used with an inductor, and the routing path of the inductor from the chip determines the area and performance of the entire power supply solution.

[0036] Reference Figure 1 , for the existing step-down power supply regulation circuit, it generally includes an upper substrate and a lower substrate, the inductor device is arranged between the upper substrate and the lower substrate, the MOS switch chip is arranged on the upper surface of the upper substrate, and the input interface, output interface and ground terminal are all arranged on the lower substrate. Since the height of the inductor is usually relatively high, when in use, after the current enters from the lower substrate, it needs to pass through a longer conduction path to reach the MOS switch chip located on the upper substrate, which will cause the resistance from the input interface to the MOS switch chip to be larger. In addition, after the current passes through the MOS switch chip, it needs to pass through a longer conduction path to reach the ground terminal of the lower substrate, which will also cause the resistance from the MOS switch chip to the ground terminal to be larger. Reference Figure 2 ,exist Figure 2In the solution, the distance between the upper substrate and the lower substrate is reduced, that is, the structure of the overall power regulation circuit will become thinner. Although the resistance mentioned above is reduced, the space of the inductor will be squeezed, resulting in insufficient inductor area, reduced inductance and saturation current capacity, and affecting the voltage conversion effect.

[0037] Based on this, the present application provides a power supply module, a voltage regulation device and an electronic device with low on-resistance to solve the above-mentioned technical problems. The technical solutions provided by the present application are described in detail one by one below.

[0038] First, refer to Figures 3 to 7 The present application provides a power module with low on-resistance, including: a substrate 100, a first switch chip 210, a second switch chip 220 and an inductor 300, wherein the substrate 100 is provided with an input interface and an output interface; the first switch chip 210 is arranged on the substrate 100, and the input end of the first switch chip 210 is connected to the input interface through a first circuit built into the substrate 100; the second switch chip 220 is arranged on the substrate 100 and is located beside the first switch chip 210, and the input end of the second switch chip 220 is connected to the output end of the first switch chip 210, and the second switch chip 220 is connected to the output end of the first switch chip 210. The output end of the switch chip 220 is grounded through a second circuit built into the substrate 100; the inductor 300 is arranged above the first switch chip 210 and the second switch chip 220, and both ends of the inductor 300 are arranged on the substrate 100, and the two ends of the inductor 300 are respectively located on both sides of the first switch chip 210 and the second switch chip 220, one end of the inductor 300 is connected between the output end of the first switch chip 210 and the input end of the second switch chip 220 through a third circuit built into the substrate 100, and the other end of the inductor 300 is connected to the output interface.

[0039] The low on-resistance power module provided in the present application includes only one substrate 100, and the first switch chip 210 and the second switch chip 220 are arranged on the substrate 100. The input end of the first switch chip 210 is connected to the input interface through the first circuit. Since the input interface and the first switch chip 210 are arranged on the same substrate 100, the internal resistance R generated by the first circuit is VIN2 In addition, the output end of the second switch chip 220 is grounded through the second line. Similarly, since it is also on the same substrate 100, the overall path of the second line is shorter, and the internal resistance R PGND Furthermore, one end of the inductor 300 is connected between the first switch chip 210 and the second switch chip 220 through a third line. Also, because they are on the same substrate 100, the internal resistance R generated by the third line is swThe present application places the inductor 300 above the first switch chip 210 and the second switch chip 220, so that the inductor 300, the first switch chip 210 and the second switch chip 220 are all arranged on the same substrate 100, thereby reducing the paths of the first circuit, the second circuit and the third circuit to reduce their corresponding internal resistances, that is, the present application can reduce the resistance generated when the circuit is turned on, thereby improving the output performance of the power supply.

[0040] It should be noted that the first switch chip 210 corresponds to Figure 6 The middle field effect upper tube QH, the second switch chip 220 corresponds to Figure 7 The field effect lower tube QL, the inductor 300 corresponds to Figure 6 Inductor L, in addition, Figure 7 The resistance R VIN2 is the internal resistance corresponding to the first circuit itself, the resistance R PGND is the internal resistance of the second circuit itself, the resistance R sw is the internal resistance corresponding to the third line itself.

[0041] Reference Figures 4 to 7 It can be understood that at least a first input capacitor 110 and a second input capacitor 120 are provided on the substrate 100, one end of the first input capacitor 110 is connected to the input interface via a fourth circuit built into the substrate 100, and one end of the second input capacitor 120 is connected to the input interface via a fifth circuit built into the substrate 100. Figure 6 In the resistor R VIN1 is the internal resistance corresponding to the fourth circuit itself, the resistance R VIN3 is the internal resistance of the fifth circuit itself, and the capacitor C VIN1 represents the first input capacitor 110, the capacitor C VIN2 represents the second input capacitor 120. Similarly, since the input interface and the first input capacitor 110 and the second input capacitor 120 are all arranged on the same substrate 100, the internal resistance R corresponding to the fourth circuit VIN1 The internal resistance R corresponding to the fifth circuit VIN3 Compared with the prior art, it will be smaller, and the overall resistance generated when the circuit is turned on can be reduced, thereby improving the output performance of the power supply.

[0042] It should be noted that the first circuit, the second circuit, the third circuit, the fourth circuit and the fifth circuit mentioned above can be sheet copper foil.

[0043] Reference Figures 3 to 6It can be understood that the inductor 300 includes an inductor copper core 310, which is C-shaped. The two ends of the inductor copper core 310 are respectively located on both sides of the first switch chip 210 and the second switch chip 220, and the inductor copper core 310 spans the first switch chip 210 and the second switch chip 220.

[0044] It is understandable that the low on-resistance power module provided by the present application also includes a heat dissipation structure, which is arranged between the first switch chip 210 and the inductor 300, and between the second switch chip 220 and the inductor 300, and the heat dissipation structure is used to transfer the heat generated by the first switch chip 210, the second switch chip 220 and the inductor 300 when working. The heat dissipation structure can conduct the first switch chip 210, the second switch chip 220 and the inductor 300 to the outside world, thereby improving the heat dissipation effect, thereby preventing the electronic device from being affected by the working effect due to excessive temperature, and even causing damage to the electronic device.

[0045] Reference Figures 3 to 6 It can be understood that the heat dissipation structure includes at least two heat dissipation U-shaped frames 400, which are respectively mounted on both sides of the inductor 300, and the inner surface of the heat dissipation U-shaped frame 400 is in contact with the surface of the inductor 300, and the lower surface of one heat dissipation U-shaped frame 400 is in contact with the upper surface of the first switch chip 210, and the lower surface of the other heat dissipation U-shaped frame 400 is in contact with the upper surface of the second switch chip 220. The heat dissipation U-shaped frame 400 is mounted on the inductor 300, and in addition to transmitting the heat generated by the inductor 300, it can also play a certain role in limiting the inductor 300. At the same time, the lower surface of the heat dissipation U-shaped frame 400 is also in contact with the first switch chip 210 or the second switch chip 220, that is, one heat dissipation U-shaped frame 400 can simultaneously play a role in cooling two electronic devices, reasonably utilizing the layout of the space, and improving the integrated setting of the power module.

[0046] It can be understood that the first switch chip 210 and the second switch chip 220 are silicon back exposed structures, and the lower surface of the heat dissipation U-shaped frame 400 is attached to the exposed silicon back portion of the first switch chip 210 or the second switch chip 220. Specifically, the heat dissipation U-shaped frame 400 can be directly bonded to the exposed silicon back portion, and the silicon back is divided into heat concentration positions. By exposing the silicon back and directly attaching the heat dissipation U-shaped frame 400 to the silicon back, the heat dissipation effect of the heat dissipation structure on the first switch chip 210, the second switch chip 220 and the inductor 300 is improved.

[0047] It is understandable that the heat dissipation U-shaped frame is made of metal copper. Metal copper has good thermal conductivity and can improve the heat dissipation effect of the first switch chip 210, the second switch chip 220 and the inductor 300.

[0048] It should be noted that the first switch chip 210, the second switch chip 220, the first input capacitor 110 and the second input capacitor 120 may be discretely arranged on the substrate 100, or may be packaged and integrated on the substrate 100. In the embodiment of the present application, refer to Figure 5 and Figure 6 The first switch chip 210 and the first input capacitor 110 are wrapped by a plastic packaging material to form a first package 510 , and the second switch chip 220 and the second input capacitor 120 are wrapped by a plastic packaging material to form a second package 520 .

[0049] In the second aspect, the present application further provides a voltage regulating device, comprising a power module with low on-resistance as in any one of the embodiments of the first aspect. The voltage regulating device is mainly based on the above-mentioned power module with low on-resistance, and the specific technical scheme and the technical effects produced can be referred to the embodiment part of the first aspect, and will not be repeated here.

[0050] In a third aspect, the present application further provides an electronic device, comprising a power module with a low on-resistance as in any one of the embodiments of the first aspect. The electronic device is mainly based on the above-mentioned power module with a low on-resistance, and the specific technical solution and the technical effects produced can refer to the embodiment part of the first aspect, and will not be repeated here.

[0051] The embodiments of the present application are described in detail above in conjunction with the accompanying drawings, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present application.

Claims

1. A power module with low on-resistance, characterized in that: include: A substrate, wherein an input interface and an output interface are provided on the substrate; a first switch chip, wherein the first switch chip is disposed on the substrate, and an input end of the first switch chip is connected to the input interface via a first circuit built into the substrate; a second switch chip, the second switch chip being arranged on the substrate and being located beside the first switch chip, the input end of the second switch chip being connected to the output end of the first switch chip, and the output end of the second switch chip being grounded through a second circuit built into the substrate; An inductor, wherein the inductor is arranged above the first switch chip and the second switch chip, and both ends of the inductor are arranged on the substrate, and the two ends of the inductor are respectively located on both sides of the first switch chip and the second switch chip, one end of the inductor is connected between the output end of the first switch chip and the input end of the second switch chip through a third circuit built into the substrate, and the other end of the inductor is connected to the output interface.

2. The low on-resistance power module according to claim 1, characterized in that: At least a first input capacitor and a second input capacitor are provided on the substrate, one end of the first input capacitor is connected to the input interface via a fourth circuit built into the substrate, and one end of the second input capacitor is connected to the input interface via a fifth circuit built into the substrate.

3. The low on-resistance power module according to claim 1, characterized in that: The inductor comprises an inductor copper core, which is C-shaped. Two ends of the inductor copper core are respectively located on two sides of the first switch chip and the second switch chip, and the inductor copper core spans the first switch chip and the second switch chip.

4. The low on-resistance power module according to claim 1, characterized in that: It also includes a heat dissipation structure, which is arranged between the first switch chip and the inductor, and between the second switch chip and the inductor. The heat dissipation structure is used to transfer the heat generated by the first switch chip, the second switch chip and the inductor during operation to the outside.

5. The low on-resistance power module according to claim 4, characterized in that: The heat dissipation structure includes at least two heat dissipation U-shaped frames, which are respectively sleeved on both sides of the inductor, and the inner surfaces of the heat dissipation U-shaped frames are in contact with the surface of the inductor, the lower surface of one of the heat dissipation U-shaped frames is in contact with the upper surface of the first switch chip, and the lower surface of the other heat dissipation U-shaped frame is in contact with the upper surface of the second switch chip.

6. The low on-resistance power module according to claim 5, characterized in that: The first switch chip and the second switch chip are of a silicon back exposed structure, and the lower surface of the heat dissipation U-shaped frame is in contact with the silicon back exposed portion of the first switch chip or the second switch chip.

7. The low on-resistance power module according to claim 5, characterized in that: The heat dissipation U-shaped frame is made of metal copper.

8. The low on-resistance power module according to claim 2, characterized in that: The first switch chip and the first input capacitor are wrapped by a plastic packaging material to form a first package, and the second switch chip and the second input capacitor are wrapped by a plastic packaging material to form a second package.

9. A voltage regulating device, characterized in that: A power supply module with low on-resistance comprising the power supply module as claimed in any one of claims 1 to 8.

10. An electronic device, characterized in that: A power supply module with low on-resistance comprising the power supply module as claimed in any one of claims 1 to 8.

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