Atomic layer deposition apparatus

Abstract

The atomic layer deposition apparatus includes: a stage on which a substrate is placed; a first source fluid storage unit that stores a first source fluid including a first precursor and a second precursor; and a deposition part located on the stage and including a first nozzle part connected to the first source fluid receiving part through a first source fluid transmission line and spraying the first source fluid to the substrate.

Description

Technical Field

[0001] The utility model relates to an atomic layer deposition device. More specifically, the utility model relates to an atomic layer deposition device for forming a thin film atomic layer. Background Art

[0002] Semiconductor devices, display devices, electronic devices, etc. include a plurality of thin films. Methods for forming the thin films include vapor deposition methods. The vapor deposition methods include atomic layer deposition methods (atomic layer deposition, ALD) that effectively utilize atomic layer deposition devices. Utility Model Content

[0003] The purpose of the utility model is to provide an atomic layer deposition device with a simplified structure.

[0004] However, the purpose of the present invention is not limited to the above-mentioned purpose, and various extensions can be made without departing from the scope of the idea and field of the present invention.

[0005] In order to achieve the above-mentioned purpose of the utility model, an atomic layer deposition device involved in an embodiment of the utility model may include: a workbench, on which a substrate is placed; a first source fluid receiving portion, which receives a first source fluid including a first precursor and a second precursor; and a deposition portion, which is located on the workbench and includes a first nozzle portion which is connected to the first source fluid receiving portion through a first source fluid transfer line and sprays the first source fluid toward the substrate.

[0006] In one embodiment, the first precursor and the second precursor may not chemically react with each other.

[0007] In one embodiment, the first source fluid may further include a third precursor containing a third metal element, and the first precursor, the second precursor and the third precursor will not chemically react with each other.

[0008] In one embodiment, the atomic layer deposition apparatus may further include: a reaction fluid receiving portion for receiving the reaction fluid, and the deposition portion may further include a second nozzle portion connected to the reaction fluid receiving portion through a reaction fluid transmission line and spraying the reaction fluid toward the substrate.

[0009] In one embodiment, the atomic layer deposition apparatus may further include: a purification fluid receiving portion for receiving the purification fluid, and the deposition portion may further include a purification portion which is located between the first nozzle portion and the second nozzle portion and is connected to the purification fluid receiving portion through a purification fluid transfer line and sprays the purification fluid toward the substrate.

[0010] In one embodiment, the first source fluid may be in a liquid state in the first source fluid receiving portion and may be ejected to the substrate in a gas state through the first nozzle portion.

[0011] In one embodiment, the first source fluid transmission line may be connected to a vaporization section and a flow control section, the vaporization section changes the first source fluid from a liquid state to a gas state, and the flow control section adjusts the flow rate of the first source fluid flowing from the first source fluid receiving section to the vaporization section.

[0012] In one embodiment, the atomic layer deposition apparatus may further include: a second source fluid receiving portion for receiving a second source fluid including a fourth precursor, the deposition portion further including a third nozzle portion connected to the second source fluid receiving portion through a second source fluid transfer line and spraying the second source fluid toward the substrate, and the third nozzle portion and the first nozzle portion are configured to alternate with each other.

[0013] In one embodiment, the first precursor and the second precursor may not chemically react with each other, and the fourth precursor may chemically react with at least one of the first precursor and the second precursor.

[0014] In one embodiment, the workbench may enable the substrate to move back and forth at a lower portion of the deposition portion.

[0015] In order to achieve the above-mentioned one purpose of the utility model, other embodiments of the utility model involve an atomic layer deposition device including: a workbench, on which a substrate is placed; a first source fluid receiving section, which receives a first source fluid including a first precursor; a second source fluid receiving section, which receives a second source fluid including a second precursor; and a deposition section, which is located on the workbench and includes a nozzle section connected to the first source fluid receiving section and the second source fluid receiving section through a source fluid transfer line and sprays the first source fluid and the second source fluid toward the substrate.

[0016] In one embodiment, the nozzle portion may spray the first source fluid and the second source fluid toward the substrate at different time points.

[0017] In one embodiment, the atomic layer deposition apparatus further includes: a purification fluid receiving portion for receiving the purification fluid, and the nozzle portion is connected to the purification fluid receiving portion through the source fluid transmission line.

[0018] In one embodiment, the nozzle portion may spray a mixed fluid obtained by mixing the first source fluid and the second source fluid toward the substrate.

[0019] In one embodiment, the source fluid transfer line may be connected to a mixing portion for mixing the first source fluid and the second source fluid.

[0020] In one embodiment, the first precursor and the second precursor may not chemically react with each other.

[0021] In one embodiment, the atomic layer deposition apparatus may further include: a third source fluid receiving portion for receiving a third source fluid including a third precursor, the nozzle portion being connected to the third source fluid receiving portion through the source fluid transfer line, and the nozzle portion spraying the third source fluid toward the substrate.

[0022] In one embodiment, the nozzle portion may spray the first source fluid, the second source fluid, and the third source fluid toward the substrate at different time points.

[0023] In one embodiment, the nozzle portion may spray a mixed fluid of the first source fluid, the second source fluid and the third source fluid toward the substrate, and the first source fluid, the second source fluid and the third source fluid do not chemically react with each other.

[0024] In one embodiment, the source fluid transmission line may be connected to a first vaporization section, a first flow control section, a second vaporization section and a second flow control section, the first vaporization section changes the first source fluid from a liquid state to a gas state, the first flow control section adjusts the flow rate of the first source fluid flowing from the first source fluid receiving section to the vaporization section, the second vaporization section changes the second source fluid from a liquid state to a gas state, the second flow control section adjusts the flow rate of the second source fluid flowing from the second source fluid receiving section to the vaporization section, the first source fluid and the second source fluid are in a liquid state in the first source fluid receiving section and the second source fluid receiving section, respectively, and are sprayed onto the substrate in a gas state through the nozzle section.

[0025] (Effect of utility model)

[0026] According to the atomic layer deposition device involved in the embodiment of the utility model, two or more different precursors can be supplied to the substrate through one nozzle unit. Thus, the number of nozzle units can be reduced compared with the case where different precursors are supplied separately through separate nozzle units. Therefore, the structure of the atomic layer deposition device can be simplified.

[0027] However, the effects of the present invention are not limited to the above-mentioned effects, and various extensions can be made without departing from the scope of the idea and field of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a diagram schematically showing an atomic layer deposition device according to a first embodiment of the present invention.

[0029] Figure 2 It is a diagram schematically showing an atomic layer deposition apparatus according to a second embodiment of the present invention.

[0030] Figure 3 It is a diagram schematically showing an atomic layer deposition device involved in the third embodiment of the present invention.

[0031] Figure 4 It is a diagram schematically showing an atomic layer deposition device involved in the fourth embodiment of the present invention.

[0032] Figure 5 It is a diagram schematically showing an atomic layer deposition device involved in the fifth embodiment of the present invention.

[0033] Figure 6 It is a diagram schematically showing an atomic layer deposition device involved in the sixth embodiment of the present invention.

[0034] Figure 7 It is a diagram schematically showing an atomic layer deposition device involved in the seventh embodiment of the present invention.

[0035] Figure 8 It is a diagram schematically showing an atomic layer deposition device involved in the eighth embodiment of the present invention.

[0036] Explanation of symbols:

[0037] 10, 20, 30, 40, 50, 60, 70, 80: atomic layer deposition apparatus; SUB: substrate; STG: workbench; DP: deposition part; NZ1: first nozzle part; NZ2: second nozzle part; NZ3: third nozzle part; PP: purification part; SFA1, SFA′1: first source fluid receiving part; SFA2, SFA′2: second source fluid receiving part; SFA′3: third source fluid receiving part; SFL1: first source fluid transfer line; SFL2: second source fluid transfer line; SFL: source fluid transfer line. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the accompanying drawings, and repeated descriptions of the same components are omitted.

[0039] Figure 1 It is a diagram schematically showing an atomic layer deposition device according to a first embodiment of the present invention.

[0040] Reference Figure 1The atomic layer deposition device 10 involved in the first embodiment of the utility model may include a workbench STG, a first source fluid receiving part SFA1, a reaction fluid receiving part RFA, a purification fluid receiving part PFA, a deposition part DP, a first source fluid transfer line SFL1, a reaction fluid transfer line RFL and a purification fluid transfer line PFL.

[0041] In one embodiment, the atomic layer deposition apparatus 10 may include a chamber (not shown). The chamber may accommodate a workbench STG, a first source fluid receiving portion SFA1, a reaction fluid receiving portion RFA, a purification fluid receiving portion PFA, a deposition portion DP, a first source fluid transfer line SFL1, a reaction fluid transfer line RFL, and a purification fluid transfer line PFL.

[0042] The chamber may be connected to a pump (not shown) to control the pressure environment of the deposition process, and may have one or more inlets (not shown) for the substrate SUB to enter and exit. In addition, the chamber may include a drive unit (not shown) for moving the worktable STG.

[0043] The workbench STG may include a groove H in which the substrate SUB can be placed, and the substrate SUB can be transferred to the inside of the cavity. The workbench STG may include a heating component (not shown) for heating the substrate SUB. In addition, the workbench STG may include a cooling component (not shown) for cooling the substrate SUB. In addition, the substrate SUB may include a fixing component (not shown) for fixing the substrate SUB. The fixing component may include a clamp, a pressure component, an adhesive, etc.

[0044] During the deposition process, the stage STG may reciprocate a plurality of times below the deposition portion DP along a straight line parallel to the first direction A. The thickness of the thin film deposited on the substrate SUB may be adjusted according to the number of reciprocating movements of the stage STG.

[0045] The first source fluid receiving portion SFA1 can receive the first source fluid SF1. The first source fluid SF1 may include a first precursor containing a first metal element and a second precursor containing a second metal element. That is, the first source fluid SF1 may be a mixed fluid in which the first precursor and the second precursor are mixed. In other words, in the first source fluid receiving portion SFA1, the first precursor and the second precursor may coexist.

[0046] In one embodiment, the first precursor and the second precursor do not chemically react with each other. In other words, the first source fluid SF1 may be a physical mixture of the first precursor and the second precursor.

[0047] In one embodiment, the first metal element may be indium (In). That is, the first precursor may be an indium precursor. For example, the first precursor may be triethyl indium (TEI).

[0048] In one embodiment, the second metal element may be gallium (Ga). That is, the second precursor may be a gallium precursor. For example, the second precursor may be trimethyl gallium (TMG).

[0049] In one embodiment, the first source fluid SF1 may further include a third precursor containing a third metal element. In other words, the first source fluid SF1 may be a mixed fluid of the first precursor, the second precursor, and the third precursor.

[0050] In one embodiment, the first precursor, the second precursor and the third precursor do not chemically react with each other. In other words, the first source fluid SF may be a physical mixture of the first precursor, the second precursor and the third precursor.

[0051] In one embodiment, the third metal element may be zinc (Zn). That is, the third precursor may be a zinc precursor. For example, the third precursor may be diethyl zinc (DEZ).

[0052] In one embodiment, the temperature inside the first source fluid receiving portion SFA1 may be about 25 degrees to about 80 degrees. In addition, the vapor pressure inside the first source fluid receiving portion SFA1 may be about 1 torr to about 20 torr.

[0053] The reaction fluid receiving portion RFA can receive the reaction fluid RF. During the deposition process, the first source fluid SF1 and the reaction fluid RF can be continuously adsorbed and reacted on one side of the substrate SUB, thereby forming a thin film on the substrate SUB. In one embodiment, the reaction fluid RF may include oxygen (O 2 ) and / or ozone (O 3 )gas.

[0054] The purification fluid receiving part PFA can receive the purification fluid PF. In one embodiment, the purification fluid PF does not affect the deposition. For example, the purification fluid PF may include argon (Ar), nitrogen (N 2 ) and / or helium (He).

[0055] The deposition part DP may continuously supply one or more fluids for forming a thin film on the substrate SUB toward the work stage STG. That is, the deposition part DP may spray one or more fluids for forming a thin film onto the substrate SUB.

[0056] For example, the deposition part DP may spray the first source fluid SF1, the reaction fluid RF and the purge fluid PF respectively so as to deposit the first source fluid SF1 and the reaction fluid RF respectively on the substrate SUB in each deposition region. That is, the atomic layer deposition apparatus 10 may be a space division type atomic layer deposition apparatus.

[0057] The deposition part DP may include a first nozzle part NZ1, a second nozzle part NZ2, and a purification part PP. The first nozzle part NZ1, the second nozzle part NZ2, and the purification part PP may be arranged along the first direction A side by side.

[0058] The first nozzle part NZ1 may spray the first source fluid SF1 toward the substrate SUB. The first nozzle part NZ1 may be connected to the first source fluid receiving part SFA1 through the first source fluid transfer line SFL1. That is, the first source fluid SF1 may move to the first nozzle part NZ1 through the first source fluid transfer line SFL1. In one embodiment, the first source fluid transfer line SFL1 may include at least one valve body. The valve body may open and close the flow path of the first source fluid SF1.

[0059] As described above, the first source fluid SF1 may be a mixed fluid in which two or more different precursors are mixed. That is, through the first source fluid transfer line SFL1, a mixed fluid in which two or more different precursors are mixed is supplied from the first source fluid receiving portion SFA1 to the first nozzle portion NZ1, and the mixed fluid in which two or more different precursors are mixed is sprayed onto the substrate SUB through the first nozzle portion NZ1. In other words, two or more precursors may be supplied to the substrate SUB through one first nozzle portion NZ1.

[0060] The second nozzle unit NZ2 can spray the reaction fluid RF onto the substrate SUB. The second nozzle unit NZ2 can be connected to the reaction fluid receiving unit RFA through the reaction fluid transfer line RFL. That is, the reaction fluid RF can move to the second nozzle unit NZ2 through the reaction fluid transfer line RFL. In one embodiment, the reaction fluid transfer line RFL may include at least one valve body. The valve body can open and close the flow path of the reaction fluid RF.

[0061] The workbench STG on which the substrate SUB is placed can move repeatedly along the first direction A and the opposite direction -A of the first direction A below the deposition part DP, while continuously performing adsorption and reaction of the first source fluid SF1 and the reaction fluid RF on one side of the substrate SUB corresponding to the deposition part DP, thereby forming a thin film on the substrate SUB.

[0062] The purification part PP may spray the purification fluid PF onto the substrate SUB. The purification part PP may be connected to the purification fluid receiving part PFA via the purification fluid transfer line PFL. That is, the purification fluid PF may move to the purification part PP via the purification fluid transfer line PFL. In one embodiment, the purification fluid transfer line PFL may include at least one valve body. The valve body may open and close the flow path of the purification fluid PF.

[0063] In one embodiment, a purge portion PP may be provided between each of the first nozzle portion NZ1 and the second nozzle portion NZ2. As described above, the purge fluid PF does not affect the deposition.

[0064] In one embodiment, the deposition part DP may have an exhaust passage connected to an exhaust pump or the like to suck in byproducts and residual fluid separated from the substrate SUB and discharge them. The exhaust passages may be formed on both sides of the purification part PP, respectively. However, the present invention is not necessarily limited to this. The purification fluid PF may separate the fluid and byproducts that remain from the fluid sprayed onto the substrate SUB without forming a film, and the separated residual fluid and byproducts may be discharged through the exhaust passage.

[0065] According to the embodiment, a first source fluid SF1 in which two or more precursors different from each other are mixed is sprayed onto a substrate SUB through a first nozzle section NZ1. Thus, compared with the case where two or more source fluids including precursors different from each other are separately supplied through separate nozzle sections, the number of nozzle sections for spraying source fluids can be reduced. Thus, the length of the deposition section DP can be reduced. In addition, by reducing the length of the deposition section DP, the size of the corresponding workbench STG can also be reduced. Therefore, the structure of the atomic layer deposition device 10 can be simplified.

[0066] Figure 2 It is a diagram schematically showing an atomic layer deposition apparatus according to a second embodiment of the present invention.

[0067] Reference Figure 2 The atomic layer deposition device 20 of the second embodiment of the present invention is similar to the reference except for the flow control unit FC and the vaporization unit VP. Figure 1 The atomic layer deposition apparatus 10 according to the first embodiment of the present invention described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0068] In one embodiment, the atomic layer deposition apparatus 20 may further include a flow control unit FC and a vaporization unit VP. The flow control unit FC and the vaporization unit VP may be connected to the first source fluid delivery line SFL1.

[0069] For example, the flow control unit FC may be located between the first source fluid receiving unit SFA1 and the vaporization unit VP on the flow path of the first source fluid SF1. In addition, the vaporization unit VP may be located between the flow control unit FC and the first nozzle unit NZ1 on the flow path of the first source fluid SF1.

[0070] In one embodiment, the first source fluid SF1 may exist in a liquid state in the first source fluid receiving part SFA1. At this time, the flow control part FC may adjust the flow rate of the first source fluid SF1 flowing from the first source fluid receiving part SFA1 to the vaporization part VP. Specifically, the flow control part FC may maintain the flow rate of the first source fluid SF1 flowing from the first source fluid receiving part SFA1 to the vaporization part VP constant. For example, the flow control part FC may be a mass flow controller, a mass flow meter, etc.

[0071] In one embodiment, the vaporization part VP can change the first source fluid SF1 from a liquid state to a gaseous state. That is, the first source fluid SF1 can be supplied to the first nozzle part NZ1 in a gaseous state through the vaporization part VP. Therefore, even when the first source fluid SF1 in a liquid state is contained in the first source fluid receiving part SFA1, the first source fluid SF1 in a gaseous state can be sprayed onto the substrate SUB through the first nozzle part NZ1.

[0072] According to the embodiment, the first source fluid SF1 can exist in a liquid state in the first source fluid receiving part SFA1. Therefore, the phenomenon that the flow rate of the first source fluid SF1 supplied from the first source fluid receiving part SFA1 to the first source fluid transfer line SFL1 is affected by the vapor pressure in the first source fluid receiving part SFA1 can be prevented or reduced. Therefore, the flow rate of the first source fluid SF1 supplied to the first nozzle part NZ1 can be more easily controlled. Therefore, the uniformity of deposition can be further improved, and the composition of the atomic layer can be more easily adjusted.

[0073] Figure 3 It is a diagram schematically showing an atomic layer deposition device involved in the third embodiment of the present invention.

[0074] Reference Figure 3 The atomic layer deposition apparatus 30 according to the third embodiment of the present invention is similar to the reference except for the second source fluid receiving portion SFA2, the third nozzle portion NZ3 and the second source fluid delivery line SFL2. Figure 1 The atomic layer deposition apparatus 10 according to the first embodiment of the present invention described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0075] In one embodiment, the atomic layer deposition apparatus 30 may further include a second source fluid receiving portion SFA2, a third nozzle portion NZ3, and a second source fluid delivery line SFL2. That is, the deposition portion DP may include the third nozzle portion NZ3.

[0076] The second source fluid receiving portion SFA2 may receive the second source fluid SF2. The second source fluid SF2 may include a fourth precursor containing a fourth metal element. In other words, the fourth precursor may exist in the second source fluid receiving portion SFA2.

[0077] On the other hand, the first source fluid SF1 may be a mixed fluid of the first precursor and the second precursor. In other words, the first precursor and the second precursor may coexist in the first source fluid receiving portion SFA1. As described above, the first precursor and the second precursor do not chemically react with each other.

[0078] Here, the fourth precursor can react chemically with the first precursor and / or the second precursor. Therefore, by accommodating the second source fluid SF2 including the fourth precursor in the separate second source fluid receiving portion SFA2, the chemical reaction of the fourth precursor with the first precursor and / or the second precursor can be blocked.

[0079] On the other hand, the first source fluid SF1 may also be a mixed fluid in which the first precursor, the second precursor and the third precursor are mixed. In other words, in the first source fluid receiving portion SFA1, the first precursor, the second precursor and the third precursor may coexist. As described above, the first precursor, the second precursor and the third precursor do not chemically react with each other.

[0080] Here, the fourth precursor can chemically react with the first precursor, the second precursor and / or the third precursor. Therefore, by accommodating the second source fluid SF2 including the fourth precursor in the separate second source fluid receiving portion SFA2, the chemical reaction of the fourth precursor with the first precursor, the second precursor and / or the third precursor can be blocked.

[0081] In one embodiment, the temperature inside the second source fluid receiving portion SFA2 may be about 25 degrees to about 80 degrees. In addition, the vapor pressure inside the second source fluid receiving portion SFA2 may be about 1 torr to about 20 torr.

[0082] The third nozzle unit NZ3 may spray the second source fluid SF2 toward the substrate SUB. The third nozzle unit NZ3 may be connected to the second source fluid receiving unit SFA2 through the second source fluid transfer line SFL2. That is, the second source fluid SF2 may move to the third nozzle unit NZ3 through the second source fluid transfer line SFL2. In one embodiment, the second source fluid transfer line SFL2 may include at least one valve body. The valve body may open and close the flow path of the second source fluid SF2.

[0083] On the other hand, the first nozzle section NZ1, the second nozzle section NZ2, the third nozzle section NZ3, and the purification section PP may be arranged side by side along the first direction A. For example, the first nozzle section NZ1 and the third nozzle section NZ3 may be arranged alternately with each other along the first direction A, and the second nozzle section NZ2 and the purification section PP may be arranged between each of the first nozzle section NZ1 and the third nozzle section NZ3.

[0084] exist Figure 3 The example in which one second nozzle unit NZ2 and two purification units PP are arranged between each first nozzle unit NZ1 and the third nozzle unit NZ3 is shown, but the present invention is not necessarily limited to this. In other examples, more than two second nozzle units NZ2 may be arranged between each first nozzle unit NZ1 and the third nozzle unit NZ3, and one or more than three purification units PP may be arranged.

[0085] According to the embodiment, by further introducing the second source fluid receiving portion SFA2, the second source fluid transfer line SFL2 and the third nozzle portion NZ3, the second source fluid SF2 including a precursor that chemically reacts with the first source fluid SF1 mixed with at least two or more different precursors can be supplied to the substrate SUB through a separate flow path. Thus, the chemical reaction of the fourth precursor with the first precursor, the second precursor and / or the third precursor can be blocked. Therefore, the types of precursors supplied to the substrate SUB can be diversified. Therefore, the composition of the atomic layer deposited on the substrate SUB can be diversified.

[0086] Figure 4 It is a diagram schematically showing an atomic layer deposition device involved in the fourth embodiment of the present invention.

[0087] Reference Figure 4 The atomic layer deposition device 40 according to the fourth embodiment of the present invention is similar to the reference except for the first flow control unit FC1, the second flow control unit FC2, the first vaporization unit VP1 and the second vaporization unit VP2. Figure 3 The atomic layer deposition apparatus 30 according to the third embodiment of the present invention described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0088] In one embodiment, the atomic layer deposition apparatus 40 may further include a first flow control unit FC1 , a second flow control unit FC2 , a first vaporization unit VP1 , and a second vaporization unit VP2 .

[0089] For example, the first flow control unit FC1 and the first vaporization unit VP1 may be connected to the first source fluid delivery line SFL1. Specifically, the first flow control unit FC1 may be located between the first source fluid receiving unit SFA1 and the first vaporization unit VP1 on the flow path of the first source fluid SF1. In addition, the first vaporization unit VP1 may be located between the first flow control unit FC1 and the first nozzle unit NZ1 on the flow path of the first source fluid SF1.

[0090] For example, the second flow control unit FC2 and the second vaporization unit VP2 may be connected to the second source fluid delivery line SFL2. Specifically, the second flow control unit FC2 may be located between the second source fluid receiving unit SFA2 and the second vaporization unit VP2 on the flow path of the second source fluid SF2. In addition, the second vaporization unit VP2 may be located between the second flow control unit FC2 and the third nozzle unit NZ3 on the flow path of the second source fluid SF2.

[0091] In one embodiment, the first source fluid SF1 may exist in a liquid state in the first source fluid receiving part SFA1. At this time, the first flow control part FC1 may adjust the flow rate of the first source fluid SF1 flowing from the first source fluid receiving part SFA1 to the first vaporization part VP1. Specifically, the first flow control part FC1 may maintain the flow rate of the first source fluid SF1 flowing from the first source fluid receiving part SFA1 to the first vaporization part VP1 constant. For example, the first flow control part FC1 may be a mass flow controller, a mass flow meter, etc.

[0092] In one embodiment, the first vaporization part VP1 can change the first source fluid SF1 from a liquid state to a gaseous state. That is, the first source fluid SF1 can be supplied to the first nozzle part NZ1 in a gaseous state through the first vaporization part VP1. Therefore, even if the first source fluid SF1 in a liquid state is received in the first source fluid receiving part SFA1, the first source fluid SF1 in a gaseous state can be sprayed onto the substrate SUB through the first nozzle part NZ1.

[0093] In one embodiment, the second source fluid SF2 may exist in a liquid state in the second source fluid receiving section SFA2. At this time, the second flow control section FC2 may adjust the flow rate of the second source fluid SF2 flowing from the second source fluid receiving section SFA2 to the second vaporization section VP2. Specifically, the second flow control section FC2 may maintain the flow rate of the second source fluid SF2 flowing from the second source fluid receiving section SFA2 to the second vaporization section VP2 constant. For example, the second flow control section FC2 may be a mass flow controller, a mass flow meter, etc.

[0094] In one embodiment, the second vaporization part VP2 can change the second source fluid SF2 from a liquid state to a gaseous state. That is, the second source fluid SF2 can be supplied to the third nozzle part NZ3 in a gaseous state through the second vaporization part VP2. Therefore, even if the second source fluid SF2 in a liquid state is received in the second source fluid receiving part SFA2, the second source fluid SF2 in a gaseous state can be sprayed onto the substrate SUB through the third nozzle part NZ3.

[0095] On the other hand, Figure 4 FIG. 4 shows a case where both the first source fluid SF1 contained in the first source fluid containing portion SFA1 and the second source fluid SF2 contained in the second source fluid containing portion SFA2 are in liquid state, but the present invention is not necessarily limited to this.

[0096] For another example, the first source fluid SF1 contained in the first source fluid storage portion SFA1 may be in a liquid state, and the second source fluid SF2 contained in the second source fluid storage portion SFA2 may be in a gaseous state. In this case, the second flow control portion FC2 and the second vaporization portion VP2 may also be omitted.

[0097] For another example, the second source fluid SF2 contained in the second source fluid storage portion SFA2 may be in a liquid state, and the first source fluid SF1 contained in the first source fluid storage portion SFA1 may be in a gaseous state. In this case, the first flow control portion FC1 and the first vaporization portion VP1 may also be omitted.

[0098] According to the embodiment, the first source fluid SF1 and the second source fluid SF2 can exist in the first source fluid receiving part SFA1 and the second source fluid receiving part SFA2 in a liquid state, respectively. Therefore, it is possible to prevent or reduce the situation in which the flow rate of the first source fluid SF1 supplied from the first source fluid receiving part SFA1 to the first source fluid transfer line SFL1 is affected by the vapor pressure in the first source fluid receiving part SFA1, or the flow rate of the second source fluid SF2 supplied from the second source fluid receiving part SFA2 to the second source fluid transfer line SFL2 is affected by the vapor pressure in the second source fluid receiving part SFA2. Therefore, it is easier to control the flow rate of the first source fluid SF1 supplied to the first nozzle part NZ1 and the flow rate of the second source fluid SF2 supplied to the third nozzle part NZ3, respectively. Therefore, the uniformity of deposition can be further improved, and the composition of the atomic layer can be more easily adjusted.

[0099] Figure 5 It is a diagram schematically showing an atomic layer deposition device involved in the fifth embodiment of the present invention.

[0100] Reference Figure 5The atomic layer deposition apparatus 50 according to the fifth embodiment of the present invention is similar to the reference except for the first source fluid receiving portion SFA′1, the second source fluid receiving portion SFA′2, the third source fluid receiving portion SFA′3 and the source fluid transfer line SFL. Figure 1 The atomic layer deposition apparatus 10 described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0101] In one embodiment, the atomic layer deposition apparatus 50 may include a first source fluid receiving portion SFA′ 1 , a second source fluid receiving portion SFA′ 2 , a third source fluid receiving portion SFA′ 3 , and a source fluid delivery line SFL.

[0102] That is, with Figure 1 Compared with the atomic layer deposition apparatus 10, the first source fluid receiving portion SFA1 and the first source fluid transfer line SFL1 are omitted, and may include a first source fluid receiving portion SFA′1, a second source fluid receiving portion SFA′2, a third source fluid receiving portion SFA′3 and a source fluid transfer line SFL.

[0103] The first source fluid receiving portion SFA'1 may receive the first source fluid SF'1. The first source fluid SF'1 may include the first precursor containing the first metal element. In other words, the first precursor may exist in the first source fluid receiving portion SFA'1.

[0104] The second source fluid receiving portion SFA'2 may receive the second source fluid SF'2. The second source fluid SF'2 may include the second precursor containing the second metal element. In other words, the second precursor may exist in the second source fluid receiving portion SFA'2.

[0105] The third source fluid receiving portion SFA'3 may receive the third source fluid SF'3. The third source fluid SF'3 may include the third precursor containing the third metal element. In other words, the third precursor may exist in the third source fluid receiving portion SFA'3.

[0106] As described above, the first metal element may be indium (In). That is, the first precursor may be an indium precursor. For example, the first precursor may be triethyl indium (TEI). In addition, the second metal element may be gallium (Ga). That is, the second precursor may be a gallium precursor. For example, the second precursor may be trimethyl gallium (TMG). In addition, the third metal element may be zinc (Zn). That is, the third precursor may be a zinc precursor. For example, the third precursor may be diethyl zinc (DEZ).

[0107] In one embodiment, the temperature inside each of the first source fluid receiving part SFA′1, the second source fluid receiving part SFA′2, and the third source fluid receiving part SFA′3 may be about 25 degrees to about 80 degrees. In addition, the vapor pressure inside each of the first source fluid receiving part SFA′1, the second source fluid receiving part SFA′2, and the third source fluid receiving part SFA′3 may be about 1 torr to about 20 torr. The temperature and vapor pressure inside each of the first source fluid receiving part SFA′1, the second source fluid receiving part SFA′2, and the third source fluid receiving part SFA′3 may be adjusted individually.

[0108] The first nozzle part NZ1 can spray the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 to the substrate SUB. The first nozzle part NZ1 can be connected to the first source fluid receiving part SFA′1, the second source fluid receiving part SFA′2 and the third source fluid receiving part SFA′3 through the source fluid transfer line SFL. That is, the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 can be moved to the first nozzle part NZ1 through the source fluid transfer line SFL, respectively. In one embodiment, the source fluid transfer line SFL may include at least one valve body. The valve body can open and close the flow path of the source fluid transfer line SFL.

[0109] In one embodiment, the first nozzle part NZ1 may spray the first source fluid SF′1, the second source fluid SF′2, and the third source fluid SF′3 onto the substrate SUB at different time points from each other.

[0110] For example, first, the workbench STG on which the substrate SUB is placed can move along the first direction A below the deposition part DP, and the first nozzle part NZ1 can selectively spray the first source fluid SF′1 onto the substrate SUB. Specifically, the valve body can be adjusted to close the flow path between the first nozzle part NZ1 and the second source fluid receiving part SFA′2 and the flow path between the first nozzle part NZ1 and the third source fluid receiving part SFA′3, and selectively open the flow path between the first nozzle part NZ1 and the first source fluid receiving part SFA′1, so that the first source fluid SF′1 can be selectively transferred to the first nozzle part NZ1 through the source fluid transfer line SFL. As a result, the first nozzle part NZ1 can selectively spray the first source fluid SF′1 onto the substrate SUB.

[0111] Then, the workbench STG on which the substrate SUB is placed can be moved below the deposition part DP along the opposite direction -A of the first direction A, and the first nozzle part NZ1 can selectively spray the second source fluid SF′2 onto the substrate SUB. Similarly, the valve body can be adjusted to close the flow path between the first nozzle part NZ1 and the first source fluid receiving part SFA′1 and the flow path between the first nozzle part NZ1 and the third source fluid receiving part SFA′3, and selectively open the flow path between the first nozzle part NZ1 and the second source fluid receiving part SFA′2, so that the second source fluid SF′2 can be selectively transferred to the first nozzle part NZ1 through the source fluid transfer line SFL. As a result, the first nozzle part NZ1 can selectively spray the second source fluid SF′2 onto the substrate SUB.

[0112] Then, the workbench STG on which the substrate SUB is placed can be moved again along the first direction A below the deposition part DP, and the first nozzle part NZ1 can selectively spray the third source fluid SF′3 onto the substrate SUB. Similarly, the valve body can be adjusted to close the flow path between the first nozzle part NZ1 and the first source fluid receiving part SFA′1 and the flow path between the first nozzle part NZ1 and the second source fluid receiving part SFA′2, and selectively open the flow path between the first nozzle part NZ1 and the third source fluid receiving part SFA′3, so as to selectively transfer the third source fluid SF′3 to the first nozzle part NZ1 through the source fluid transfer line SFL. Thus, the first nozzle part NZ1 can selectively spray the third source fluid SF′3 onto the substrate SUB.

[0113] On the other hand, in one embodiment, the first nozzle unit NZ1 may be connected to the source fluid delivery line SFL and the purge fluid receiving part PFA. That is, the purge fluid PF may be moved to the first nozzle unit NZ1 through the source fluid delivery line SFL. For example, after each time the first source fluid SF′1 to the third source fluid SF′3 are respectively sprayed onto the substrate SUB through the first nozzle unit NZ1, the purge fluid PF may be supplied to the first nozzle unit NZ1 through the source fluid delivery line SFL.

[0114] Specifically, after the first nozzle unit NZ1 selectively sprays the first source fluid SF′1 onto the substrate SUB and before the first nozzle unit NZ1 selectively sprays the second source fluid SF′2 onto the substrate SUB, the purge fluid PF may be supplied to the first nozzle unit NZ1 through the source fluid delivery line SFL. For example, after the first nozzle unit NZ1 selectively sprays the first source fluid SF′1 onto the substrate SUB and before the worktable STG on which the substrate SUB is placed moves below the deposition portion DP, the purge fluid PF may be supplied to the first nozzle unit NZ1 through the source fluid delivery line SFL.

[0115] In addition, after the first nozzle unit NZ1 selectively sprays the second source fluid SF′2 onto the substrate SUB and before the first nozzle unit NZ1 selectively sprays the third source fluid SF′3 onto the substrate SUB, the purge fluid PF may be supplied to the first nozzle unit NZ1 through the source fluid delivery line SFL. For example, after the first nozzle unit NZ1 selectively sprays the second source fluid SF′2 onto the substrate SUB and before the worktable STG on which the substrate SUB is placed moves below the deposition portion DP, the purge fluid PF may be supplied to the first nozzle unit NZ1 through the source fluid delivery line SFL.

[0116] Thus, the purified fluid PF can separate the fluid and byproducts remaining inside the first nozzle part NZ1. The separated remaining fluid and byproducts can be discharged through the exhaust passage. Therefore, the purified fluid PF can prevent or reduce the phenomenon that the source fluids are mixed or reacted inside the first nozzle part NZ1.

[0117] According to an embodiment, two or more source fluids including mutually different precursors can be sprayed onto the substrate SUB through a first nozzle section NZ1. Thus, compared with the case where two or more source fluids including mutually different precursors are separately supplied through separate nozzle sections, the number of nozzle sections for spraying the source fluids can be reduced. Thus, the length of the deposition section DP can be reduced. In addition, by reducing the length of the deposition section DP, the size of the corresponding workbench STG can also be reduced. Therefore, the structure of the atomic layer deposition device 50 can be simplified.

[0118] Figure 6 It is a diagram schematically showing an atomic layer deposition device involved in the sixth embodiment of the present invention.

[0119] Reference Figure 6 The atomic layer deposition apparatus 60 according to the sixth embodiment of the present invention is similar to the reference except for the mixed fluid MF and the mixing part MP. Figure 5 The atomic layer deposition apparatus 50 according to the fifth embodiment of the present invention described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0120] In one embodiment, the first nozzle part NZ1 of the atomic layer deposition device 60 can spray a mixed fluid MF mixed with the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 onto the substrate SUB. In one embodiment, the mixed fluid MF can be a fluid mixed with the first precursor, the second precursor and the third precursor.

[0121] For example, the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 can be mixed in the source fluid transfer line SFL to form a mixed fluid MF. Specifically, the valve body can be adjusted to open the flow path between the first nozzle part NZ1 and the first source fluid receiving part SFA′1, the flow path between the first nozzle part NZ1 and the second source fluid receiving part SFA′2, and the flow path between the first nozzle part NZ1 and the third source fluid receiving part SFA′3, so as to mix the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 in the source fluid transfer line SFL. Thus, the first nozzle part NZ1 can receive the mixed fluid MF through the source fluid transfer line SFL.

[0122] On the other hand, as described above, the first precursor, the second precursor, and the third precursor do not chemically react with each other. In other words, the mixed fluid MF may be a physical mixture of the first precursor, the second precursor, and the third precursor.

[0123] In one embodiment, the atomic layer deposition apparatus 60 may further include a mixing section MP. The mixing section MP may be connected to the source fluid transfer line SFL. For example, the mixing section MP may be located on the flow path of the first source fluid SF′1, the second source fluid SF′2, and the third source fluid SF′3. The mixing section MP may adjust the internal pressure, temperature, etc., so as to more smoothly mix the first source fluid SF′1, the second source fluid SF′2, and the third source fluid SF′3. Thus, the mixing between the first source fluid SF′1, the second source fluid SF′2, and the third source fluid SF′3 may be more smoothly achieved. Optionally, the mixing section MP may also be omitted.

[0124] According to an embodiment, a mixed fluid MF in which two or more different precursors are mixed can be sprayed onto a substrate SUB through a first nozzle section NZ1. That is, the mixed fluid MF can function as a source fluid. Thus, compared with the case where two or more source fluids including different precursors are separately supplied through separate nozzle sections, the number of nozzle sections for spraying source fluids can be reduced. Thus, the length of the deposition section DP can be reduced. In addition, by reducing the length of the deposition section DP, the size of the corresponding workbench STG can also be reduced. Therefore, the structure of the atomic layer deposition device 60 can be simplified.

[0125] Figure 7 It is a diagram schematically showing an atomic layer deposition device involved in the seventh embodiment of the present invention.

[0126] Reference Figure 7The atomic layer deposition device 70 of the seventh embodiment of the present invention is the same as the reference except for the first flow control unit FC′1, the second flow control unit FC′2, the third flow control unit FC′3, the first gasification unit VP′1, the second gasification unit VP′2 and the third gasification unit VP′3. Figure 5 The atomic layer deposition apparatus 50 according to the fifth embodiment of the present invention described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0127] In one embodiment, the atomic layer deposition apparatus 70 may further include a first flow control unit FC′1, a second flow control unit FC′2, a third flow control unit FC′3, a first gasification unit VP′1, a second gasification unit VP′2 and a third gasification unit VP′3.

[0128] For example, the first flow control part FC′1 and the first vaporization part VP′1 may be connected to the source fluid transfer line SFL. Specifically, the first flow control part FC′1 may be located between the first source fluid receiving part SFA′1 and the first vaporization part VP′1 on the flow path of the first source fluid SF′1. In addition, the first vaporization part VP′1 may be located between the first flow control part FC′1 and the first nozzle part NZ1 on the flow path of the first source fluid SF′1.

[0129] For example, the second flow control unit FC′2 and the second vaporization unit VP′2 may be connected to the source fluid transfer line SFL. Specifically, the second flow control unit FC′2 may be located between the second source fluid receiving unit SFA′2 and the second vaporization unit VP′2 on the flow path of the second source fluid SF′2. In addition, the second vaporization unit VP′2 may be located between the second flow control unit FC′2 and the first nozzle unit NZ1 on the flow path of the second source fluid SF′2.

[0130] For example, the third flow control unit FC′3 and the third vaporization unit VP′3 may be connected to the source fluid transfer line SFL. Specifically, the third flow control unit FC′3 may be located between the third source fluid receiving unit SFA′3 and the third vaporization unit VP′3 on the flow path of the third source fluid SF′3. In addition, the third vaporization unit VP′3 may be located between the third flow control unit FC′3 and the first nozzle unit NZ1 on the flow path of the third source fluid SF′3.

[0131] In one embodiment, the first source fluid SF′1 may exist in a liquid state in the first source fluid receiving section SFA′1. At this time, the first flow control section FC′1 may adjust the flow rate of the first source fluid SF′1 flowing from the first source fluid receiving section SFA′1 to the first vaporization section VP′1. Specifically, the first flow control section FC′1 may maintain the flow rate of the first source fluid SF′1 flowing from the first source fluid receiving section SFA′1 to the first vaporization section VP′1 constant. For example, the first flow control section FC′1 may be a mass flow controller, a mass flow meter, etc.

[0132] In one embodiment, the first vaporization part VP'1 can change the first source fluid SF'1 from a liquid state to a gaseous state. That is, the first source fluid SF'1 can be supplied to the first nozzle part NZ1 in a gaseous state through the first vaporization part VP'1. Therefore, even when the first source fluid SF'1 in a liquid state is contained in the first source fluid receiving part SFA'1, the first source fluid SF'1 in a gaseous state can be sprayed onto the substrate SUB through the first nozzle part NZ1.

[0133] In one embodiment, the second source fluid SF′2 may exist in a liquid state in the second source fluid receiving section SFA′2. At this time, the second flow control section FC′2 may adjust the flow rate of the second source fluid SF′2 flowing from the second source fluid receiving section SFA′2 to the second vaporization section VP′2. Specifically, the second flow control section FC′2 may maintain the flow rate of the second source fluid SF′2 flowing from the second source fluid receiving section SFA′2 to the second vaporization section VP′2 constant. For example, the second flow control section FC′2 may be a mass flow controller, a mass flow meter, etc.

[0134] In one embodiment, the second vaporization part VP'2 can change the second source fluid SF'2 from a liquid state to a gaseous state. That is, the second source fluid SF'2 can be supplied to the first nozzle part NZ1 in a gaseous state through the second vaporization part VP'2. Therefore, even when the second source fluid SF'2 in a liquid state is contained in the second source fluid receiving part SFA'2, the second source fluid SF'2 in a gaseous state can be sprayed onto the substrate SUB through the first nozzle part NZ1.

[0135] In one embodiment, the third source fluid SF′3 may exist in a liquid state in the third source fluid receiving section SFA′3. At this time, the third flow control section FC′3 may adjust the flow rate of the third source fluid SF′3 flowing from the third source fluid receiving section SFA′3 to the third vaporization section VP′3. Specifically, the third flow control section FC′3 may maintain the flow rate of the third source fluid SF′3 flowing from the third source fluid receiving section SFA′3 to the third vaporization section VP′3 constant. For example, the third flow control section FC′3 may be a mass flow controller, a mass flow meter, etc.

[0136] In one embodiment, the third vaporization part VP'3 can change the third source fluid SF'3 from a liquid state to a gaseous state. That is, the third source fluid SF'3 can be supplied to the first nozzle part NZ1 in a gaseous state through the third vaporization part VP'3. Therefore, even when the third source fluid SF'3 in a liquid state is contained in the third source fluid receiving part SFA'3, the third source fluid SF'3 in a gaseous state can be sprayed onto the substrate SUB through the first nozzle part NZ1.

[0137] On the other hand, Figure 7 It shows the situation that the first source fluid SF′1 contained in the first source fluid storing part SFA′1, the second source fluid SF′2 contained in the second source fluid storing part SFA′2 and the third source fluid SF′3 contained in the third source fluid storing part SFA′3 are all in liquid state, but the utility model is not necessarily limited to this.

[0138] For another example, any one or two of the first source fluid SF′1 contained in the first source fluid receiving portion SFA′1, the second source fluid SF′2 contained in the second source fluid receiving portion SFA′2, and the third source fluid SF′3 contained in the third source fluid receiving portion SFA′3 may be in a liquid state, and the remaining two or one may be in a gaseous state. In this case, the flow control portion and the vaporization portion corresponding to the source fluid in a gaseous state may also be omitted.

[0139] According to the embodiment, the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 may be respectively present in the first source fluid receiving part SFA′1, the second source fluid receiving part SFA′2 and the third source fluid receiving part SFA′3 in a liquid state. Therefore, the phenomenon that the flow rate of the first source fluid SF′1 supplied from the first source fluid receiving part SFA′1 to the source fluid transfer line SFL is affected by the vapor pressure in the first source fluid receiving part SFA′1, or the flow rate of the second source fluid SF′2 supplied from the second source fluid receiving part SFA′2 to the source fluid transfer line SFL is affected by the vapor pressure in the second source fluid receiving part SFA′2, or the flow rate of the third source fluid SF′3 supplied from the third source fluid receiving part SFA′3 to the source fluid transfer line SFL is affected by the vapor pressure in the third source fluid receiving part SFA′3 can be prevented or reduced. Therefore, the flow rates of the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 supplied to the first nozzle part NZ1 can be more easily controlled. Therefore, the uniformity of deposition and the like can be further improved, and the composition of the atomic layer can be more easily adjusted.

[0140] Figure 8 It is a diagram schematically showing an atomic layer deposition device involved in the eighth embodiment of the present invention.

[0141] Reference Figure 8 The atomic layer deposition device 80 of the eighth embodiment of the present invention is the same as the reference except for the first flow control unit FC′1, the second flow control unit FC′2, the third flow control unit FC′3, the first gasification unit VP′1, the second gasification unit VP′2 and the third gasification unit VP′3. Figure 6 The atomic layer deposition apparatus 60 described above may be substantially the same, and therefore, repeated descriptions are omitted or simplified.

[0142] In one embodiment, the atomic layer deposition apparatus 80 may further include a first flow control unit FC′1, a second flow control unit FC′2, a third flow control unit FC′3, a first gasification unit VP′1, a second gasification unit VP′2 and a third gasification unit VP′3.

[0143] On the other hand, the specific description of each of the first flow control unit FC′1, the second flow control unit FC′2, the third flow control unit FC′3, the first vaporization unit VP′1, the second vaporization unit VP′2 and the third vaporization unit VP′3 has been referred to. Figure 7 As explained above, the detailed description is omitted below.

[0144] According to the embodiment, even if at least one of the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 exists in a liquid state in the corresponding source fluid receiving portion, a mixed fluid MF in which the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 in a gas state are mixed can be sprayed onto the substrate SUB through the first nozzle portion NZ1. Therefore, the phenomenon that the contents of the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 included in the mixed fluid MF are affected by the vapor pressure of the source fluid receiving portion can be prevented or reduced. Therefore, it is easier to control the contents of the first source fluid SF′1, the second source fluid SF′2 and the third source fluid SF′3 included in the mixed fluid MF. Therefore, the uniformity of deposition can be further improved, and the composition of the atomic layer can be more easily adjusted.

[0145] According to the atomic layer deposition apparatus involved in various embodiments of the utility model, two or more different precursors can be supplied to the substrate through one nozzle unit. Thus, the number of nozzle units can be reduced compared to the case where different precursors are supplied separately through separate nozzle units. Therefore, the structure of the atomic layer deposition apparatus can be simplified.

[0146] The present invention can be applied to display devices and electronic devices including the same. For example, the present invention can be applied to high-resolution smart phones, mobile phones, smart tablets, smart watches, tablet PCs, vehicle navigation systems, televisions, computer monitors, notebooks, etc.

[0147] Although the present invention has been described above with reference to the exemplary embodiments, it should be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the scope of the concept and field of the present invention described in the claims.

Claims

1. An atomic layer deposition device, characterized in that: include: A workbench, for placing the substrate; A first source fluid receiving portion receiving a first source fluid including a first precursor and a second precursor; as well as The deposition part is located on the workbench and includes a first nozzle part connected to the first source fluid receiving part through a first source fluid transmission line and spraying the first source fluid toward the substrate.

2. The atomic layer deposition device according to claim 1, characterized in that: Also includes: a reaction fluid storage part for storing the reaction fluid, The deposition part further includes a second nozzle part connected to the reaction fluid receiving part through a reaction fluid transmission line and spraying the reaction fluid toward the substrate.

3. The atomic layer deposition device according to claim 2, characterized in that: Also includes: A purified fluid storage unit for storing purified fluid. The deposition unit further includes a purification unit located between the first nozzle unit and the second nozzle unit and connected to the purification fluid receiving unit through a purification fluid transmission line and spraying the purification fluid toward the substrate.

4. The atomic layer deposition device according to claim 1, characterized in that: The first source fluid is in a liquid state in the first source fluid receiving portion and is ejected to the substrate in a gas state through the first nozzle portion.

5. The atomic layer deposition device according to claim 4, characterized in that: The first source fluid transmission line is connected to the gasification part and the flow control part, wherein, The gasification unit changes the first source fluid from a liquid state to a gas state, The flow control unit adjusts a flow rate of the first source fluid flowing from the first source fluid receiving unit to the vaporizing unit.

6. The atomic layer deposition device according to claim 1, characterized in that: Also includes: A second source fluid receiving portion receives a second source fluid including a fourth precursor, The deposition unit further includes a third nozzle unit connected to the second source fluid receiving unit through a second source fluid transmission line and configured to spray the second source fluid toward the substrate. The third nozzle parts and the first nozzle parts are arranged to alternate with each other.

7. An atomic layer deposition device, characterized in that: include: A workbench, for placing the substrate; A first source fluid receiving portion receiving a first source fluid including a first precursor; A second source fluid receiving portion receiving a second source fluid including a second precursor; as well as The deposition part is located on the workbench and includes a nozzle part connected to the first source fluid receiving part and the second source fluid receiving part through a source fluid transmission line and spraying the first source fluid and the second source fluid onto the substrate.

8. The atomic layer deposition device according to claim 7, characterized in that: The nozzle portion sprays the first source fluid and the second source fluid toward the substrate at different time points from each other.

9. The atomic layer deposition device according to claim 7, characterized in that: The nozzle portion sprays a mixed fluid obtained by mixing the first source fluid and the second source fluid toward the substrate.

10. The atomic layer deposition device according to claim 9, characterized in that: The source fluid transfer line is connected to a mixing portion that mixes the first source fluid and the second source fluid.

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