Low-resistance transparent conductive film for large screen

Abstract

The utility model provides a low-resistance transparent conductive film for a large screen. The low-resistance transparent conductive film for the large screen sequentially comprises a flexible base material layer, a base layer, a high-folding layer, a low-folding layer, a first conductive layer and a second conductive layer from inside to outside. According to the low-resistance transparent conductive film for the large screen, the transparent conductive film does not need to be etched, etching marks can be avoided, the surface smoothness and attractiveness of the transparent conductive film are guaranteed, and the stability and reliability of the transparent conductive film are improved. In addition, due to the adoption of the flexible base material layer, the flexibility of the transparent conductive film can be improved, the transparent conductive film can be conveniently attached to the surface of a large-screen display, bubbles and wrinkles are reduced, and the attaching effect and the display effect of the transparent conductive film are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of display, in particular to a low-resistance transparent conductive film for a large screen. Background Art

[0002] With the improvement of the quality of life, people's demand for large size is getting higher and higher. Especially for commercial display and large-size TV, the demand for touch is also getting higher and higher. The infrared touch used in large size can no longer meet people's demand for touch. The demand for capacitive multi-point touch is imminent. The conventional transparent conductive film in China has high resistance. After the touch product is made into a single line, the capacitance is not enough, which will cause the contact to be insensitive and there will be technical problems such as etching marks. Therefore, the market urgently needs a low-resistance transparent conductive film for large screens. Utility Model Content

[0003] The utility model aims to provide a low-resistance transparent conductive film for large screens, so as to solve the problems of low touch sensitivity and etching marks in traditional transparent conductive films.

[0004] In order to achieve the above-mentioned purpose, the technical solution adopted by the utility model is: to provide a low-resistance transparent conductive film for a large screen, and the low-resistance transparent conductive film for a large screen comprises:

[0005] The low-resistance transparent conductive film for large screens comprises, from inside to outside, a flexible substrate layer, a primer layer, a high folding layer, a low folding layer, a first conductive layer, and a second conductive layer.

[0006] In one embodiment, the first conductive layer is a 90:10 indium tin oxide film deposited by vacuum magnetron sputtering, and the thickness of the indium tin oxide film is 70 nm.

[0007] In one embodiment, the second conductive layer is a 95:5 indium tin oxide film deposited by vacuum magnetron sputtering, and the thickness of the indium tin oxide film is 40 nm.

[0008] In one embodiment, the low-fold layer is a silicon dioxide film deposited by vacuum magnetron sputtering, and the thickness of the silicon dioxide film is 80 nm.

[0009] In one embodiment, the high fold layer is a niobium pentoxide film deposited by vacuum magnetron sputtering, and the thickness of the niobium pentoxide film is 10 nm.

[0010] In one embodiment, the base layer is a silicon nitride film deposited by vacuum magnetron sputtering, and the thickness of the silicon nitride film is 3 nm.

[0011] In one embodiment, the flexible substrate layer specifically includes a transparent PI layer, a transparent PET layer, and a transparent COP layer; and the thicknesses of the transparent PI layer, the transparent PET layer, and the transparent COP layer are 50um, 100um, and 125um, respectively.

[0012] One or more of the above technical solutions in the embodiments of the present utility model have at least the following technical effects or advantages:

[0013] The embodiment of the utility model provides a low-resistance transparent conductive film for large screens. By setting a base layer, a high folding layer, a low folding layer, a first conductive layer and a second conductive layer, the resistance of the transparent conductive film can be effectively reduced and its conductive performance can be improved. It is suitable for the production of large-screen displays. At the same time, since the transparent conductive film does not need to be etched, the generation of etching marks can be avoided, the surface finish and aesthetics of the transparent conductive film can be guaranteed, and its stability and reliability can be improved. In addition, since a flexible substrate layer is used, the flexibility of the transparent conductive film can be increased, which facilitates its bonding to the surface of the large-screen display, reduces the generation of bubbles and wrinkles, and improves its bonding effect and display effect. Therefore, the low-resistance transparent conductive film for large screens of the present invention has good application prospects and market value. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0015] Figure 1 A schematic structural diagram of a low-resistance transparent conductive film for large screens provided in an embodiment of the utility model.

[0016] The respective reference numerals are as follows:

[0017] 1. Flexible substrate layer; 2. Base layer; 3. High folding layer; 4. Low folding layer; 5. First conductive layer; 6. Second conductive layer. DETAILED DESCRIPTION

[0018] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0019] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0020] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0021] In the present invention, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", "fix" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] See also Figure 1 The embodiment of the present application provides a low-resistance transparent conductive film for a large screen, and the specific manufacturing method thereof is as follows:

[0023] Three flexible substrates, namely transparent PI (polyimide), PET (polyethylene terephthalate) and COP (epoxidized polycyclohexane), were selected and cut into required sizes respectively as substrates for transparent conductive films.

[0024] The transparent PI substrate is placed in a vacuum magnetron sputtering device, a silicon nitride target is selected, and a 3nm thick silicon nitride film is formed on one side of the transparent PI substrate as a base layer by a vacuum magnetron sputtering deposition method.

[0025] The transparent PI substrate covered with the base layer is transferred to another vacuum magnetron sputtering device, and a niobium pentoxide target is selected. A 10nm thick niobium pentoxide film is formed on the base layer as a high folding layer by vacuum magnetron sputtering deposition.

[0026] The transparent PI substrate covered with the high fold layer is transferred to the third vacuum magnetron sputtering equipment, and a silicon dioxide target is selected. Through the vacuum magnetron sputtering deposition method, an 80nm thick silicon dioxide film is formed on the high fold layer as a low fold layer.

[0027] The transparent PI substrate covered with the low fold layer is transferred to the fourth vacuum magnetron sputtering device, and the indium tin oxide target is selected. Through the vacuum magnetron sputtering deposition method, a 70nm thick 90:10 indium tin oxide film is formed on the low fold layer as the first conductive layer.

[0028] The transparent PI substrate covered with the first conductive layer is transferred to the fifth vacuum magnetron sputtering device, and an indium tin oxide target is selected. A 40nm thick 95:5 indium tin oxide film is formed on the first conductive layer by vacuum magnetron sputtering deposition as the second conductive layer.

[0029] The transparent PI substrate covered by the second conductive layer is taken out from the vacuum magnetron sputtering device, and is subjected to ultraviolet light curing treatment by a UV curing machine to form a hardened layer, thereby completing the preparation of the transparent PI substrate layer.

[0030] Repeat steps 2 to 7 to prepare transparent conductive film layers with the same structure on the transparent PET substrate and the transparent COP substrate respectively.

[0031] The transparent PI substrate layer, the transparent PET substrate layer and the transparent COP substrate layer are heat-pressed and compounded in the order from inside to outside by a heat press machine to form a low-resistance transparent conductive film for large screens, and the thickness of the film is 50um+100um+125um=275um.

[0032] The obtained large screen is cut into required sizes using a low-resistance transparent conductive film and is used for making large-screen displays.

[0033] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A low-resistance transparent conductive film for large screens, characterized in that: The low-resistance transparent conductive film for large screens includes, from inside to outside, a flexible substrate layer, a base layer, a high-fold layer, a low-fold layer, a first conductive layer, and a second conductive layer; the flexible substrate layer specifically includes a transparent PI layer, a transparent PET layer, and a transparent COP layer; the low-fold layer is a silicon dioxide film deposited by vacuum magnetron sputtering; the high-fold layer is a niobium pentoxide film deposited by vacuum magnetron sputtering; and the base layer is a silicon nitride film deposited by vacuum magnetron sputtering.

2. The low-resistance transparent conductive film for large screens according to claim 1, characterized in that: The thickness of the silicon dioxide film is 80 nm.

3. The low-resistance transparent conductive film for large screens according to claim 1, characterized in that: The thickness of the niobium pentoxide film is 10 nm.

4. The low-resistance transparent conductive film for large screens according to claim 1, characterized in that: The thickness of the silicon nitride film is 3 nm.

5. The low-resistance transparent conductive film for large screens according to claim 1, characterized in that: The thicknesses of the transparent PI layer, the transparent PET layer and the transparent COP layer are 50um, 100um and 125um respectively.

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