Furnace core group beneficial to latent heat release of indium phosphide single crystal crystallization

Abstract

The utility model provides a furnace core group beneficial to latent heat release of indium phosphide single crystal crystallization. The furnace core group comprises a hearth pipe, the supporting pipe is arranged in the hearth pipe, and alumina powder is filled between the supporting pipe and the hearth pipe; the quartz tube is arranged in the supporting tube, heat preservation cotton is filled between the quartz tube and the supporting tube, and a temperature measuring assembly is arranged on the peripheral side of the quartz tube; the quartz rod is arranged in the quartz tube, and an elastic piece is arranged at the bottom of the quartz rod; the bottom of the charging pipe abuts against the interior of the quartz rod, the charging pipe is supported by the supporting pipe, and heat of a small nozzle of the charging pipe can flow to the quartz rod to achieve latent heat release of crystallization in the mode that the charging pipe is kept in contact with the quartz rod, so that growth of indium phosphide single crystals is improved, and generation of twin crystals is reduced.

Description

Technical Field

[0001] The utility model relates to the field of crystallization of indium phosphide single crystals, in particular to a furnace core group which is beneficial to the release of latent heat of crystallization of indium phosphide single crystals. Background Art

[0002] Indium phosphide single crystal is a very important compound semiconductor material and a new generation of semiconductor material after silicon and germanium. Because of its excellent characteristics of high electron mobility and large bandgap, it is a better new generation of microelectronics and optoelectronic materials than gallium arsenide and is widely used in the field of microwave and optoelectronic devices.

[0003] At present, the preparation process of the furnace core group of the indium phosphide single crystal process is to cut the glass rod into a set size, and then bundle it together with a ceramic tube with platinum-rhodium wire, wrap the quartz rod with wet felt, and then put it into the quartz tube and bake it to a fixed shape under high temperature and high pressure. At present, the quartz rod of this type of furnace core group is relatively long from the small mouth of the loading tube. In order to ensure that the manufacturing error of the loading tube is within a reasonable range and the small mouth does not bear weight after the loading tube is loaded into the furnace, it is necessary to avoid that the seed crystal cavity is too short. If the front end of the small mouth of the loading tube contacts the quartz rod, the contact position becomes the main bearing point of the material in the loading tube, which is very easy to cause damage to the small mouth. Therefore, it is necessary to reserve a certain size for the length of the seed crystal cavity to prevent the small mouth of the loading tube from being subjected to force and causing tube cracking during the production process. Once the tube cracking problem occurs, it will cause huge losses to the material. However, since the growth process of indium phosphide is carried out under high temperature and high pressure, it is necessary to grow single crystals in a specific stainless steel pressure vessel under high pressure. Therefore, the furnace core group is fixed and cannot be moved during the growth of single crystals. The distance between the nozzle of the loading tube and the quartz rod will seriously affect the thermal conductivity of the quartz rod. The heat cannot be discharged in time, resulting in a high temperature at the center of the crystal solid-liquid interface, forming a concave solid-liquid interface, which is not conducive to crystal growth. Utility Model Content

[0004] The utility model aims to provide a furnace core group which is beneficial to the release of crystallization latent heat of indium phosphide single crystal, and the charging tube is kept in contact with the quartz rod, so that the heat of the small mouth of the charging tube can flow to the quartz rod to realize the release of crystallization latent heat, so as to improve the growth of indium phosphide single crystal and reduce the generation of twins.

[0005] To achieve the above objectives, the present technical solution provides a furnace core group that is beneficial to the release of latent heat of crystallization of indium phosphide single crystals, including:

[0006] furnace tubes;

[0007] A support tube, the support tube is placed in the furnace tube and alumina powder is filled between the support tube and the furnace tube;

[0008] A quartz tube, the quartz tube is placed in the support tube and the space between the quartz tube and the support tube is filled with thermal insulation cotton, and a temperature measuring component is installed on the outer peripheral side of the quartz tube;

[0009] A quartz rod, which is installed in the quartz tube and an elastic member is arranged at the bottom of the quartz rod;

[0010] The bottom of the charging tube is against the quartz rod and the charging tube is supported by the supporting tube.

[0011] Compared with the prior art, this technical solution has the following characteristics and beneficial effects:

[0012] 1. The furnace core group that is beneficial to the release of latent heat of crystallization of indium phosphide single crystal is designed with an elastic member. The setting of the elastic member makes the upper end of the quartz rod always contact with the small nozzle of the charging tube, promotes the heat of the small nozzle of the charging tube to flow to the quartz rod, and then conducts to the tail of the furnace to change the solid-liquid interface status of the indium phosphide single crystal growth, reduce the dislocation density during the growth process of indium phosphide, and increase the uniformity of the crystal after growth;

[0013] 2. The alumina powder of the furnace core group that is beneficial to the release of the latent heat of crystallization of indium phosphide single crystals is filled in the space between the outer wall of the support tube and the inner wall of the furnace tube, which can avoid the gap formed by the shrinkage and cracking of the insulation cotton, and solve the problem of unstable temperature field and large radial temperature difference that is not conducive to the growth of single crystals. In addition, since the insulation cotton will not shrink and crack, it does not need to be repeatedly removed and replaced, and the alumina powder between the furnace tube and the support tube can be reused after the impurity particles mixed in are screened out by an electric screen, which saves costs to a certain extent. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall structure of a furnace core group that is beneficial to the release of latent heat of crystallization of indium phosphide single crystal according to an embodiment of the utility model.

[0015] In the figure: 10-furnace tube, 20-support tube, 30-quartz tube, 40-quartz rod, 50-charging tube, 51-equal diameter part, 52-shoulder part, 53-discharging part, 60-temperature measuring element, 61-first temperature measuring couple, 62-second temperature measuring couple, 63-third temperature measuring couple, 71-insulating cotton, 72-alumina powder, 80-elastomer. DETAILED DESCRIPTION

[0016] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the utility model.

[0017] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0018] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0019] This solution provides a furnace core group that is conducive to the release of crystallization latent heat of indium phosphide single crystal. When indium phosphide enters the growth process, it will continuously release crystallization latent heat. However, since the growth of indium phosphide needs to be carried out in a high temperature and high pressure environment, it is impossible to lift the quartz rod upward during the growth of the indium phosphide single crystal to promote the crystallization latent heat to pass through the crystal to the seed crystal and the quartz rod to the low temperature area of ​​the furnace body. This method is not conducive to the growth of indium phosphide single crystal. Therefore, Figure 1 As shown, the present solution provides a furnace core group that is beneficial to the release of latent heat of crystallization of indium phosphide single crystals, including:

[0020] Furnace tube 10;

[0021] A support tube 20, the support tube 20 is placed in the furnace tube 10 and alumina powder 72 is filled between the support tube 20 and the furnace tube 10;

[0022] A quartz tube 30, the quartz tube 30 is placed in the support tube 20 and the space between the quartz tube 30 and the support tube 20 is filled with heat insulation cotton 71, and a temperature measuring component 60 is installed on the outer peripheral side of the quartz tube 30;

[0023] A quartz rod 40, the quartz rod 40 is installed in the quartz tube 30 and an elastic member 80 is provided at the bottom of the quartz rod 40;

[0024] The charging tube 50 has its bottom abutted against the inside of the quartz rod 40 and is supported by the supporting tube 20 .

[0025] The present solution designs an elastic member 80 to ensure that the upper end of the quartz rod 40 can always be in contact with the bottom of the charging tube 50, so that the heat of the charging tube 50 can flow to the quartz rod 40 and be conducted to the furnace tail of the furnace tube 10, changing the solid-liquid interface status of the indium phosphide single crystal growth, reducing the dislocation density during the indium phosphide growth process, and increasing the uniformity of the crystal after growth. In addition, the alumina powder placed between the furnace tube 10 and the support tube 20 can avoid the gap formed by the shrinkage and cracking of the insulation cotton 71, and ensure the stability of the temperature field.

[0026] Specifically, the furnace tube 10 of the present solution is equipped with a support tube 20, and the bottoms of the furnace tube 10 and the support tube 20 are paved with wet felt and then placed on the base 90. It should be noted that the height of the support tube 20 is lower than the height of the furnace tube 10. In some embodiments, the alumina powder 72 fills all gaps between the support tube 20 and the furnace tube 10. In other words, the top of the alumina powder 72 is flush with the top of the support tube 20. In addition, the alumina powder 72 used as the filling material in the present solution can not only make up for the cracks caused by the shrinkage of the thermal insulation cotton 71, but also can be reused after the single crystal growth is completed.

[0027] In some embodiments, the furnace tube 10 and the support tube 20 are cylindrical structures with different diameters.

[0028] In addition, a third thermocouple 63 is fixed to the outside of the support tube 20, wherein the third thermocouple 63 is inserted into the alumina powder 72 between the support tube 20 and the furnace tube 10. In some embodiments, one end of the third thermocouple 63 is flush with the top of the support tube 20, and the other end protrudes from the base 90 and is exposed.

[0029] The quartz tube 30 of this solution is installed in the support tube 20, and the top height of the quartz tube 30 is lower than the top height of the support tube 20. The insulation cotton 71 fills the gap between the quartz tube 30 and the support tube 20. In some embodiments, the top of the insulation cotton 71 is flush with the top of the quartz tube 30. It should be noted that the insulation cotton 71 is wrapped around the outside of the temperature measuring component 60 of the quartz tube 30, and the outside of the insulation cotton 71 is in contact with the inner wall of the support tube 20.

[0030] The temperature measuring assembly 60 includes a first temperature measuring couple 61 and a second temperature measuring couple 62 fixed on both sides of the quartz tube 30 . In some embodiments, the first temperature measuring couple 61 and the second temperature measuring couple 62 are symmetrically fixed on both sides of the quartz tube 30 using invisible tape.

[0031] In addition, in some embodiments, the top heights of the first temperature measuring thermocouple 61 and the second temperature measuring thermocouple 62 differ by 20-30 mm. In other words, the top of the first temperature measuring thermocouple 61 is higher than the top of the second temperature measuring thermocouple 62. In some embodiments, the top of the first temperature measuring thermocouple 61 is 20-30 mm higher than the top of the second temperature measuring thermocouple 62.

[0032] In some embodiments, the top ends of the first and second temperature measuring couples 61 and 62 are both located at the spatial position where the charging tube 50 is inserted into the quartz tube 40 , and the bottom ends of the first and second temperature measuring couples 61 and 62 are exposed protruding from the base 90 .

[0033] The quartz rod 40 of the present solution is mounted on the quartz tube 30, and the other end of the elastic member 80 mounted on the bottom of the quartz rod 40 is in contact with the quartz tube 30. In some embodiments, the top of the quartz rod 40 is not higher than the top of the quartz tube 30, and the bottom of the charging tube 50 abuts against the quartz rod 40 and is inserted into the quartz tube 30.

[0034] In some embodiments, the elastic member 80 is a spring.

[0035] In some embodiments, the charging tube 50 includes a constant diameter portion 51, a shoulder portion 52 and a discharge portion 53 connected in sequence, wherein the constant diameter portion 51 and the discharge portion 53 are cylindrical structures with constant diameters, and the diameter of the shoulder portion 52 gradually decreases from the constant diameter portion 51 toward the discharge portion 53. In the embodiment of the present scheme, the outer wall of the constant diameter portion 51 contacts the inner wall of the furnace tube 10, the shoulder portion 52 abuts against the support tube 20, and the discharge portion 53 is placed in the quartz tube 30 and the bottom of the discharge portion 53 contacts the quartz rod 40.

[0036] The method for making the furnace core group that is beneficial to the release of latent heat of crystallization of indium phosphide single crystal provided by this scheme is as follows:

[0037] 1) First, the temperature measuring element 60 is symmetrically fixed on both sides of the quartz tube 30;

[0038] 2) Cut the insulation cotton 71 to a suitable size and wrap it around the quartz tube 30 from the inside to the outside until the size of the insulation cotton after wrapping is the same as the inner diameter of the support tube 20, put the quartz tube 30 wrapped with the insulation cotton 71 into the support tube 20, and seal the two ends of the support tube 20 with wet felt. After the sealing is completed, put it into a baking furnace and bake it to 1000°C;

[0039] 3) After fixing the third temperature measuring thermocouple 63 on the outside of the dried support tube 20, place it into the furnace tube 10, place the furnace tube 10 and the support tube 20 on the base 90 and pave the bottom with wet felt to ensure that there is no gap between the bottom of the furnace tube 10 and the support tube 20 and the base 90, and then pour high-purity alumina powder 72 between the furnace tube 10 and the support tube 20 to the top of the support tube 20;

[0040] 4) After placing the elastic member 80 at the bottom of the quartz tube 30, cut the quartz rod 40 according to the length of the discharge portion 53 of the loading tube 50, and place the quartz rod 40 into the quartz tube 30 to support it on the elastic member 31.

[0041] The charging tube 50 is then placed on the quartz rod 40 .

[0042] The present utility model is not limited to the above-mentioned optimal implementation mode. Anyone can derive other various forms of products under the inspiration of the present utility model. However, no matter what changes are made in the shape or structure, all those having the same or similar technical solutions as the present application fall within the protection scope of the present utility model.

Claims

1. A furnace core assembly that is beneficial to the release of latent heat of crystallization of indium phosphide single crystal, characterized in that: include: furnace tubes; A support tube, the support tube is placed in the furnace tube and alumina powder is filled between the support tube and the furnace tube; A quartz tube, the quartz tube is placed in the support tube and the space between the quartz tube and the support tube is filled with thermal insulation cotton, and a temperature measuring component is installed on the outer peripheral side of the quartz tube; A quartz rod, which is installed in the quartz tube and an elastic member is arranged at the bottom of the quartz rod; The bottom of the charging tube is against the quartz rod and the charging tube is supported by the supporting tube.

2. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The height of the support tube is lower than the height of the furnace tube, and the top of the alumina powder is flush with the top of the support tube.

3. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The furnace tube and the support tube are cylindrical structures with different diameters.

4. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: A third temperature measuring couple is fixed on the outer side of the support tube, wherein the third temperature measuring couple is inserted in the alumina powder between the support tube and the furnace tube.

5. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The top height of the quartz tube is lower than the top height of the supporting tube, and the top end of the thermal insulation cotton is flush with the top end of the quartz tube.

6. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The outer side of the thermal insulation cotton contacts the inner wall of the support tube.

7. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The temperature measuring component comprises a first temperature measuring couple and a second temperature measuring couple fixed on two sides of the quartz tube, and the top end of the first temperature measuring couple is higher than the top end of the second temperature measuring couple.

8. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The other end of the elastic member at the bottom of the quartz rod is in contact with the quartz tube, and the top of the quartz rod is not higher than the top of the quartz tube.

9. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 1, characterized in that: The loading tube comprises an equal diameter portion, a shoulder portion and a discharge portion which are connected in sequence, wherein the equal diameter portion and the discharge portion are cylindrical structures with constant diameters, and the diameter of the shoulder portion gradually decreases from the equal diameter portion toward the discharge portion.

10. The furnace core assembly for facilitating the release of latent heat of crystallization of indium phosphide single crystal according to claim 9, characterized in that: The outer wall of the equal diameter part contacts the inner wall of the furnace tube, the shoulder part abuts against the support tube, the discharge part is placed in the quartz tube and the bottom of the discharge part contacts the quartz rod.

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