Monocrystalline silicon doping device
By designing a single crystal silicon doping device that uses magnetic driving mobile columns and mixing buckets, the problem of uneven mixed mixed with the maternal alloy and the silicon hydraulic, realizing the uniformity of single crystal silicon resistivity and the improvement of maternal compliance financial efficiency improvement Essence
Patent Information
- Application Number
- CN202420889689.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-26
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2034-04-26
AI Technical Summary
When the existing single crystal silicon doping device pours the master alloy into the silicon liquid, it is easy to cause the master alloy to mix unevenly with the silicon liquid, resulting in uneven resistivity of the produced single crystal silicon.
A single crystal silicon doping device is designed, including a cavity, a moving column and a doping hopper. The magnetic force of the outer magnetic sleeve and the inner magnetic sleeve is used to drive the moving column and the doping hopper to move and rotate. By setting the blocking plate and limit part, to achieve the effect of the master alloy gradually falling into the silicon liquid, and to prevent the master alloy from dumping in one place.
The mixing uniformity of the mother alloy and the silicon hydraulic is improved, the uniformity of the single crystal silicon resistivity is ensured, the accumulation of the parent alloy in the silicon hydrobi is reduced, and the melting efficiency of the parent alloy is improved.
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Figure CN222389963U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a single crystal silicon doping device. Background Art
[0002] The photovoltaic industry is developing rapidly, the conversion efficiency of photovoltaic cells is constantly being refreshed, and the quality requirements for monocrystalline silicon are constantly increasing. The resistivity of monocrystalline silicon has a great influence on the power generation efficiency. The efficiency of monocrystalline cells with resistivity within a certain range is higher, so the resistivity concentration issue has received much attention.
[0003] The mother alloy doped in N-type single crystal silicon is extremely easy to volatilize in the high temperature environment of the single crystal furnace. After multiple disconnections or after producing a certain length of single crystal silicon, the mother alloy volatilizes more, resulting in a larger resistance of the single crystal silicon. At this time, a doping device is needed to dope the mother alloy to ensure that the resistance of the produced single crystal silicon is normal.
[0004] For example, announcement number CN204111914U discloses a doping mechanism for a single crystal silicon growth furnace. Although it is controlled by an operating lever, it uses magnetic force to achieve linear motion and rotational motion, so that the doping material stored in the charging spoon in advance is put into the quartz crucible, which can achieve the purpose of doping with the required elements during the single crystal furnace pulling process.
[0005] However, the applicant found that when the hopper containing the master alloy is first moved to the top of the crucible by linear motion through magnetic force, and then the hopper is turned over by rotational motion through magnetic force, thereby pouring the master alloy in the hopper into the silicon liquid in the crucible, the master alloy is all poured into a certain position in the silicon liquid, which can easily cause uneven mixing of the master alloy and the silicon liquid, resulting in uneven resistivity of the produced single crystal silicon. Utility Model Content
[0006] In view of this, the purpose of the utility model is to propose a single crystal silicon doping device to solve the problem that the mother alloy is poured into a certain position in the silicon liquid by using a hopper, and the mother alloy accumulates in one place, which is not easy to dissolve quickly and easily causes uneven mixing of the mother alloy and the silicon liquid.
[0007] Based on the above purpose, the utility model provides a single crystal silicon doping device, including a cavity, and the open end of the cavity is fixedly connected to a flange, a movable column is arranged in the cavity, and a doping hopper is detachably mounted on the end of the movable column, an inner magnetic sleeve is arranged on the surface fixed sleeve of the end of the movable column away from the doping hopper, and an outer magnetic sleeve is arranged on the surface sliding sleeve of the cavity, which attracts the inner magnetic sleeve;
[0008] A leakage hole is provided at the bottom of the mixing hopper, and a sealing plate for sealing the leakage hole is arranged at the bottom of the mixing hopper. A placement groove is provided on the movable column, and a limiting part connected to the sealing plate is arranged in the placement groove. A retaining ring for the movable column to pass through is fixedly connected in the cavity.
[0009] Preferably, a movable groove and an arc groove are provided on the cavity, the arc groove is arranged at the end of the movable groove, and the movable groove and the arc groove are connected to each other, and a movable block which is compatible with the movable groove and the arc groove is fixedly connected to the inner side of the outer magnetic sleeve, and the outer magnetic sleeve is moved toward the direction of the flange, and the movable block moves in the movable groove, and drives the movable column and the mixing hopper to move under the action of magnetic force, and when the movable block moves to the arc groove, the outer magnetic sleeve can be rotated, thereby driving the movable column and the mixing hopper to rotate.
[0010] Preferably, the fixed sleeve on the surface of the movable column is provided with two ball bearings, and the two ball bearings are located on both sides of the inner magnetic sleeve.
[0011] Preferably, a plurality of grooves are formed on the inner side of the retaining ring, and balls for supporting the moving column are rollingly connected in the grooves.
[0012] Preferably, a push rod is fixedly connected to the outer magnetic sleeve, and a hook for limiting and fixing the push rod is rotatably connected to the cavity.
[0013] Preferably, a receiving groove for plugging a sealing plate is provided at the bottom of the admixture hopper, a skirt is fixedly connected to the surface of the sealing plate, and a skirt placement groove matching the skirt is provided on the inner wall of the receiving groove.
[0014] Preferably, the limiting portion includes a connecting rod, which is connected to the sealing plate, and a plurality of supporting sleeves are fixedly connected in the placement groove for the connecting rod to pass through and support the connecting rod, and one end of the connecting rod away from the sealing plate is fixedly connected to the limiting block.
[0015] The beneficial effects of the utility model are as follows:
[0016] 1. Move the outer magnetic sleeve, and under the action of magnetic force, drive the inner magnetic sleeve and the moving column to move, thereby driving the hopper to move together. When the hopper has not entered the range above the crucible, the sealing plate will move with the hopper. When the hopper is about to enter the range of the crucible, the limit part contacts the baffle ring. When the outer magnetic sleeve drives the hopper to continue to move, the baffle ring blocks the end of the limit part. During the process of the hopper continuing to move within the range of the crucible, the sealing plate gradually releases the obstruction of the leak hole, so that the mother alloy can gradually fall into the silicon liquid in the crucible.
[0017] 2. When the outer magnetic sleeve moves into place, rotating the outer magnetic sleeve drives the mixing hopper to rotate, so that the master alloy retained in the mixing hopper can be poured into the silicon liquid, avoiding the master alloy from being poured into a certain position, accelerating the melting of the master alloy, and improving the uniformity of the mixing of the master alloy and the silicon liquid. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 It is a schematic diagram of the structure of an embodiment of the utility model;
[0020] Figure 2 For the utility model embodiment Figure 1 A cross-sectional view of
[0021] Figure 3 For the utility model embodiment Figure 1 Schematic diagram of the structure in which the middle plugging plate is about to release the plugging of the leak hole;
[0022] Figure 4 For the utility model embodiment Figure 1 Schematic diagram of the structure in which the middle plugging plate has completely released the plugging of the leak hole;
[0023] Figure 5 This is a schematic diagram of the structure of the mobile column and the hopper in the embodiment of the utility model;
[0024] Figure 6 This is a schematic structural diagram of a blocking plate and a limiting portion in an embodiment of the utility model;
[0025] Figure 7 It is an enlarged view of the structure at A of the embodiment of the utility model;
[0026] Figure 8 It is a schematic structural diagram of a retaining ring according to an embodiment of the utility model.
[0027] In the figure: 1. cavity; 2. flange; 3. moving column; 4. mixing hopper; 5. inner magnetic sleeve; 6. outer magnetic sleeve; 7. leakage hole; 8. sealing plate; 9. limiting part; 91. connecting rod; 92. supporting sleeve; 93. limiting block; 10. moving block; 11. ball bearing; 12. retaining ring; 13. ball; 14. push rod; 15. hook; 16. skirt. DETAILED DESCRIPTION
[0028] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0029] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0030] like Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 As shown, a single crystal silicon doping device comprises a cavity 1, one end of the cavity 1 is sealed, and the other end is open, and a flange 2 is fixedly connected to the open end of the cavity 1, and the open end of the cavity 1 is connected to the auxiliary chamber of the single crystal furnace through the flange 2, and a moving column 3 is arranged in the cavity 1, and a doping hopper 4 is detachably mounted on the end of the moving column 3, and the detachable mounting method can be a more common threaded screwing method, and an inner magnetic sleeve 5 is fixedly provided on the surface of the end of the moving column 3 away from the doping hopper 4, and an outer magnetic sleeve 6 that attracts the inner magnetic sleeve 5 is provided on the surface sliding sleeve of the cavity 1, and under the action of the mutually attractive magnetic force, the moving outer magnetic sleeve 6 can drive the inner magnetic sleeve 5 to move;
[0031] A leakage hole 7 is provided at the bottom of the doping hopper 4, and the inner diameter of the leakage hole 7 is larger than the outer diameter of the master alloy particles. A sealing plate 8 for sealing the leakage hole 7 is provided at the bottom of the doping hopper 4. A placement groove is provided on the movable column 3, and a limiting portion 9 connected to the sealing plate 8 is provided in the placement groove. A retaining ring 12 for the movable column 3 to pass through is fixedly connected in the cavity 1.
[0032] When it is necessary to add the master alloy to the silicon liquid in the crucible of the main chamber of the single crystal furnace, the master alloy is added to the doping hopper 4 in the sub-chamber of the single crystal furnace. After the sub-chamber rotary purification is completed, the rotary plate valve used to isolate the sub-chamber and the main chamber is opened, and then the outer magnetic sleeve 6 is moved to drive the inner magnetic sleeve 5 to move, thereby driving the moving column 3 and the doping hopper 4 to move. When the moving doping hopper 4 is about to enter the range of the crucible, the end of the limiting portion 9 will contact the baffle ring 12. When the doping hopper 4 continues to move, the baffle ring 12 blocks the end of the limiting portion 9, so that the sealing plate 8 will not move with the doping hopper 4 during the continued movement of the doping hopper 4, so that the sealing plate 8 gradually releases the blockage of the leak 7, thereby avoiding that all the master alloy is dumped in a certain position, thereby improving the uniformity of the mixing of the master alloy and the silicon liquid.
[0033] In a preferred embodiment of the utility model, a movable groove and an arc groove are provided on the cavity 1, the arc groove is arranged at the end of the movable groove, and the movable groove and the arc groove are interconnected, and a movable block 10 which is compatible with the movable groove and the arc groove is fixedly connected to the inner side of the outer magnetic sleeve 6, and the outer magnetic sleeve 6 is moved toward the direction of the flange 2, and the movable block 10 moves in the movable groove, and drives the movable column 3 and the mixing hopper 4 to move under the action of magnetic force, and when the movable block 10 moves to the end of the movable groove, i.e., the arc groove, the outer magnetic sleeve 6 can be rotated, and the movable block 10 slides in the arc groove, thereby driving the movable column 3 and the mixing hopper 4 to rotate, and the mixing hopper 4 can be rotated 180 degrees, so that the opening of the mixing hopper 4 is downward, so that the master alloy retained in the mixing hopper 4 can be poured into the silicon liquid, thereby avoiding the master alloy being poured into a certain position, and improving the uniformity of the mixing of the master alloy and the silicon liquid.
[0034] In another preferred embodiment of the utility model, two ball bearings 11 are fixedly sleeved on the surface of the movable column 3, and the two ball bearings 11 are located on both sides of the inner magnetic sleeve 5. The ball bearings 11 support the movable column 3 and reduce the friction between the inner magnetic sleeve 5 and the inner wall of the cavity 1, so that the outer magnetic sleeve 6 drives the inner magnetic sleeve 5 to move more smoothly.
[0035] In another preferred embodiment of the utility model, a retaining ring 12 is fixedly connected in the cavity 1 for the moving column 3 to pass through, a plurality of grooves are provided on the inner side of the retaining ring 12, and balls 13 for supporting the moving column 3 are rollingly connected in the grooves. Under the rolling support of the balls 13 and the ball bearings 11, the moving column 3 is in a horizontal direction as a whole when moving, and the moving column 3 is relatively stable and smooth during the movement.
[0036] It should be noted that a push rod 14 is fixedly connected to the outer magnetic sleeve 6, and the push rod 14 makes it more convenient to push the outer magnetic sleeve 6. A hook 15 is rotatably connected to the cavity 1 for limiting and fixing the push rod 14. Through the setting of the hook 15, it is convenient to clamp the push rod 14 through the hook 15 when no mother alloy is added, thereby limiting and fixing the outer magnetic sleeve 6 and avoiding accidental touching of the outer magnetic sleeve 6.
[0037] It should be noted that a receiving groove for the plugging plate 8 to be inserted is provided at the bottom of the mixing hopper 4, a skirt 16 is fixedly connected to the surface of the plugging plate 8, and a skirt placement groove matched with the skirt 16 is provided on the inner wall of the receiving groove. Through the setting of the receiving groove and the skirt 16, the plugging plate 8 can be supported so that the plugging plate 8 can be stably located at the bottom of the mixing hopper 4.
[0038] Based on the above embodiment, the limiting portion 9 includes a connecting rod 91, which is connected to the sealing plate 8. A plurality of support sleeves 92 are fixedly connected in the placement groove for the connecting rod 91 to pass through and support the connecting rod 91. The support sleeve 92 is relatively small in size. In the process of following the movement of the moving column 3, the support sleeve 92 can pass through the retaining ring 12, that is, the retaining ring 12 will not form an obstacle to the support sleeve 92. The end of the connecting rod 91 away from the sealing plate 8 is fixedly connected to a limiting block 93. The limiting block 93 is relatively large in size. When the connecting rod 91 follows the movement of the moving column 3, the limiting block 93 contacts the retaining ring 12, and the limiting block 93 cannot pass through the retaining ring 12. The retaining ring 12 hinders the limiting block 93.
[0039] When it is necessary to add the mother alloy to the silicon liquid in the crucible of the main chamber of the single crystal furnace, the mother alloy is added to the doping hopper 4 in the sub-chamber of the single crystal furnace. After the sub-chamber rotary purification is completed, the rotary plate valve used to isolate the sub-chamber and the main chamber is opened, and then the outer magnetic sleeve 6 is moved to drive the inner magnetic sleeve 5 to move under the action of magnetic force, thereby driving the moving column 3 and the doping hopper 4 to move. When the doping hopper 4 is about to enter the crucible range, the limit block 93 will contact the baffle ring 12. Since the baffle ring 12 blocks the limit block 93, when the outer magnetic sleeve 6 drives the doping hopper 4 to continue to move, since the baffle ring 12 blocks the limit block 93, the blocking plate 8 will not move with the doping hopper 4 during the continued movement of the doping hopper 4, so that the blocking plate 8 gradually releases the blockage of the leak hole 7, and the mother alloy particles in the doping hopper 4 will gradually fall into the silicon liquid in the crucible, avoiding the mother alloy from being dumped in a certain position, thereby improving the uniformity of the mixing of the mother alloy and the silicon liquid.
[0040] When the movable outer magnetic sleeve 6 is in place, that is, when the movable block 10 moves to the end of the movable groove, the outer magnetic sleeve 6 is rotated, and the movable block 10 slides in the arc groove, thereby driving the movable column 3 and the mixing hopper 4 to rotate. The mixing hopper 4 can rotate 180 degrees, so that the opening of the mixing hopper 4 is downward, so that the master alloy retained in the mixing hopper 4 can be poured into the silicon liquid, avoiding the master alloy from being dumped in a certain position, thereby improving the uniformity of the mixing of the master alloy and the silicon liquid.
[0041] A person skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present invention is limited to these examples. Under the concept of the present invention, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity.
[0042] The embodiments of the present invention are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
Claims
1. A single crystal silicon doping device, comprising a cavity (1), wherein an opening end of the cavity (1) is fixedly connected to a flange (2), characterized in that: A movable column (3) is arranged in the cavity (1), and a material mixing hopper (4) is detachably mounted on the end of the movable column (3); a fixed sleeve on the surface of the movable column (3) at one end away from the material mixing hopper (4) is provided with an inner magnetic sleeve (5), and a sliding sleeve on the surface of the cavity (1) is provided with an outer magnetic sleeve (6) that attracts the inner magnetic sleeve (5); The bottom of the mixing hopper (4) is provided with a leakage hole (7), and the bottom of the mixing hopper (4) is provided with a blocking plate (8) for blocking the leakage hole (7). The movable column (3) is provided with a placement groove, and a limiting portion (9) connected to the blocking plate (8) is provided in the placement groove. A retaining ring (12) for the movable column (3) to pass through is fixedly connected in the cavity (1).
2. A single crystal silicon doping device according to claim 1, characterized in that: The cavity (1) is provided with a movable groove and an arc groove, the arc groove is arranged at the end of the movable groove, and the movable groove and the arc groove are interconnected. The inner side of the outer magnetic sleeve (6) is fixedly connected with a movable block (10) that is compatible with the movable groove and the arc groove. The outer magnetic sleeve (6) is moved toward the flange (2). The movable block (10) moves in the movable groove and drives the movable column (3) and the mixing hopper (4) to move under the action of magnetic force. When the movable block (10) moves to the arc groove, it can rotate the outer magnetic sleeve (6), thereby driving the movable column (3) and the mixing hopper (4) to rotate.
3. The single crystal silicon doping device according to claim 1, characterized in that: Two ball bearings (11) are fixedly sleeved on the surface of the movable column (3), and the two ball bearings (11) are located on both sides of the inner magnetic sleeve (5).
4. The single crystal silicon doping device according to claim 1, characterized in that: A plurality of grooves are formed on the inner side of the retaining ring (12), and balls (13) for supporting the moving column (3) are rollingly connected in the grooves.
5. The single crystal silicon doping device according to claim 1, characterized in that: A push rod (14) is fixedly connected to the outer magnetic sleeve (6), and a hook (15) for limiting and fixing the push rod (14) is rotatably connected to the cavity (1).
6. The single crystal silicon doping device according to claim 1, characterized in that: The bottom of the mixing hopper (4) is provided with a receiving groove for inserting the sealing plate (8), the surface of the sealing plate (8) is fixedly connected with a skirt (16), and the inner wall of the receiving groove is provided with a skirt placement groove matched with the skirt (16).
7. The single crystal silicon doping device according to claim 1, characterized in that: The limiting portion (9) comprises a connecting rod (91), the connecting rod (91) being connected to the blocking plate (8), a plurality of supporting sleeves (92) being fixedly connected in the placement groove for the connecting rod (91) to pass through and support the connecting rod (91), and one end of the connecting rod (91) away from the blocking plate (8) is fixedly connected to a limiting block (93).
Citation Information
Patent Citations
Doping mechanism for single-crystal silicon growth furnace
CN204111914U
Cited By
Doping device suitable for different crystal pulling technologies and operation method thereof
CN121046931A