Epitaxial growth ring bearing jig

Abstract

The utility model discloses an epitaxial growth ring bearing jig. The epitaxial growth ring bearing jig comprises a growth disc and a growth ring, the growth disc comprises a base and a step part protruding out of the upper surface of the base. The growth ring is arranged on the periphery of the growth disc in a surrounding mode and comprises an upper sealing part and a lower sealing part which are connected with each other. The upper sealing part covers one part of the upper surface of the step part in parallel, and the upper sealing part and one part of the upper surface of the step part are arranged at intervals to form a containing groove, so that the substrate in the containing groove and the upper sealing part are arranged hermetically. One end of the lower sealing part is connected with one end, close to the edge of the growth disc, of the upper sealing part, the other end of the lower sealing part extends to the bottom of the peripheral surface of the base towards the base, and the lower sealing part is close to the peripheral surface of the growth disc, so that the lower sealing part is sealed with the peripheral surface of the growth disc. According to the epitaxial growth ring bearing jig provided by the utility model, the substrate atomization phenomenon is improved, the working procedures are reduced, the input cost is reduced, the yield of the epitaxial layer of the substrate is improved, and the shipment efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of jigs, in particular to an epitaxial growth ring bearing jig. Background Art

[0002] In the related art, the epitaxial growth jigs used for epitaxial growth in electronic devices are mainly right-angle growth ring and growth disk combination support jigs or chamfered growth ring and growth disk combination support jigs. However, the above two types of epitaxial growth jigs are prone to substrate atomization during the epitaxial process. After the substrate is atomized, it is necessary to increase the rework polishing process and the cleaning process to deal with the atomized substrate. Adding the process will not only increase the investment cost but also reduce the yield of the substrate epitaxial layer. For example, the cleanliness of the surface of the substrate epitaxial layer will be affected during the polishing and cleaning process, thereby reducing the yield of the product. In addition, the number of transportation and placement will increase during the cleaning process, which will also affect the surface of the substrate epitaxial layer, thereby reducing the yield of the product. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide an epitaxial growth ring support fixture, which effectively improves the phenomenon of substrate atomization and improves the yield of the substrate epitaxial layer.

[0004] An epitaxial growth ring supporting fixture according to an embodiment of the utility model includes: a growth disk, the growth disk includes a base and a step portion protruding from the upper surface of the base; a growth ring, the growth ring is arranged around the outer periphery of the growth disk, the growth ring includes an upper sealing portion and a lower sealing portion connected to each other, the upper sealing portion covers a portion of the upper surface of the step portion in parallel and is spaced apart from a portion of the upper surface of the step portion to form a receiving groove, so that the substrate in the receiving groove is sealed with the upper sealing portion, one end of the lower sealing portion is connected to an end of the upper sealing portion close to the edge of the growth disk, the other end of the lower sealing portion extends toward the base to the bottom of the outer peripheral surface of the base, and the lower sealing portion is arranged close to the outer peripheral surface of the growth disk, so that the lower sealing portion is sealed with the outer peripheral surface of the growth disk.

[0005] According to the epitaxial growth ring supporting jig of the utility model, the gap between the substrate and the upper sealing part of the growth ring, and the gap between the growth ring and the growth disk are basically eliminated through the sealing cooperation between the upper sealing part of the growth ring and the substrate, and the lower sealing part and the growth disk. In this way, during the epitaxial growth process of the substrate, it is basically avoided that the growth source gas passes through the gap of the epitaxial growth ring supporting jig or the gap between the epitaxial growth ring supporting jig and the substrate to be plated on the non-growth surface of the substrate, thereby effectively improving the phenomenon of substrate atomization, reducing the number of substrate rework polishing processes and the number of cleaning processes, reducing investment costs, and improving the yield of the epitaxial layer of the substrate, increasing shipment efficiency.

[0006] According to some embodiments of the utility model, the lower sealing portion includes a first vertical extension portion, one end of which is connected to one end of the upper sealing portion close to the edge of the growth disk, and the other end of the first vertical extension portion extends along the outer peripheral surface of the step portion to the upper surface of the base; a first horizontal extension portion, one end of the first horizontal extension portion is connected to the other end of the first vertical extension portion, and the other end of the first horizontal extension portion extends along the upper surface of the base in a direction away from the center of the base to the edge of the upper surface of the base; and a second vertical extension portion, one end of the second vertical extension portion is connected to the other end of the first horizontal extension portion, and the other end of the second vertical extension portion extends along the outer peripheral surface of the base to the bottom of the outer peripheral surface of the base.

[0007] According to some embodiments of the present invention, the first vertical extension portion is sealed with the outer peripheral surface of the step portion; and / or the first horizontal extension portion is sealed with the upper surface of the base.

[0008] According to some embodiments of the present invention, the size of the substrate is L1, and L1 satisfies: 4 inches ≤ L1 ≤ 8 inches.

[0009] According to some embodiments of the present invention, the first horizontal extension portion covers a portion of the substrate, and a dimension along the radial direction of the substrate is L2, and L2 satisfies: 2cm≤L2≤8cm.

[0010] According to some embodiments of the present invention, the contact position between the growth ring and the substrate is chamfered, right-angled, sawtooth-shaped or arc-shaped.

[0011] According to some embodiments of the present invention, the substrate is a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a silicon carbide substrate or a gallium nitride substrate.

[0012] According to some embodiments of the present invention, the growth disk is a graphite piece; and / or the growth ring is a graphite piece.

[0013] According to some embodiments of the present invention, the growth ring and the growth disk are sealed by gravity.

[0014] According to some embodiments of the present invention, the growth ring and the substrate are sealed by gravity.

[0015] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0017] Figure 1 A schematic diagram of an existing right-angle growth ring and growth disk combined support fixture;

[0018] Figure 2 It is a schematic diagram of the cooperation between the existing right-angle growth ring and growth disk combination supporting fixture and substrate;

[0019] Figure 3 A schematic diagram of the cooperation between a part of an existing right-angle growth ring and growth disk combined support fixture and a substrate;

[0020] Figure 4 A schematic diagram of an existing chamfered growth ring and growth disk combined support fixture;

[0021] Figure 5 It is a schematic diagram of the cooperation between the epitaxial growth ring supporting fixture and the substrate according to the first specific embodiment of the utility model;

[0022] Figure 6 Based on Figure 5 Schematic diagram of the growth ring and substrate of the epitaxial growth ring supporting fixture;

[0023] Figure 7 It is a schematic diagram of the cooperation between the epitaxial growth ring supporting fixture and the substrate according to the second specific embodiment of the utility model;

[0024] Figure 8 Based on Figure 7 Schematic diagram of the growth ring and substrate of the epitaxial growth ring supporting fixture;

[0025] Fig. 9 It is a schematic diagram of the cooperation between the epitaxial growth ring supporting fixture and the substrate according to the third specific embodiment of the utility model;

[0026] Fig.10 Based on Fig. 9 Schematic diagram of the growth ring and substrate of the epitaxial growth ring supporting fixture;

[0027] Fig.11 It is a schematic diagram of the cooperation between the epitaxial growth ring supporting fixture and the substrate according to the fourth specific embodiment of the utility model;

[0028] Fig.12 Based on Fig.11 Schematic diagram of the growth ring and substrate of the epitaxial growth ring supporting fixture.

[0029] Reference numerals:

[0030] 100. Epitaxial growth ring supporting fixture;

[0031] 1. Growth plate; 11. Base; 12. Step portion;

[0032] 2. Growth ring; 21. Upper sealing portion; 22. Lower sealing portion; 221. First vertical extension portion; 222. First horizontal extension portion; 223. Second vertical extension portion; 3. Accommodating groove;

[0033] 200. Substrate. DETAILED DESCRIPTION

[0034] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Figure 5-Figure 12 The epitaxial growth ring supporting fixture 100 according to the embodiment of the present invention is described in detail.

[0035] like Figure 5-Figure 12 As shown, the epitaxial growth ring supporting fixture 100 according to the embodiment of the present invention includes a growth disk 1 and a growth ring 2 .

[0036] Specifically, the growth disk 1 includes a base 11 and a step portion 12 protruding from the upper surface of the base 11. The growth ring 2 is arranged around the outer periphery of the growth disk 1, and the growth ring 2 includes an upper sealing portion 21 and a lower sealing portion 22 connected to each other. The upper sealing portion 21 covers a portion of the upper surface of the step portion 12 in parallel and is spaced apart from a portion of the upper surface of the step portion 12 to form a receiving groove 3, so that the substrate 200 in the receiving groove 3 is sealed with the upper sealing portion 21. One end of the lower sealing portion 22 is connected to one end of the upper sealing portion 21 close to the edge of the growth disk 1, and the other end of the lower sealing portion 22 extends toward the base 11 to the bottom of the outer peripheral surface of the base 11, and the lower sealing portion 22 is arranged close to the outer peripheral surface of the growth disk 1, so that the lower sealing portion 22 is sealed with the outer peripheral surface of the growth disk 1.

[0037] For example, in Figure 5-Figure 12 In the example, the base 11 and the step portion 12 of the growth disk 1 are coaxially arranged to improve the symmetry of the setting of the growth ring 2 on the periphery of the growth disk 1, thereby improving the stability of the epitaxial growth ring supporting fixture 100 on the substrate 200, and increasing the symmetry of the circumferential force on the substrate 200 to improve the flatness of the epitaxial growth on the substrate 200.

[0038] The accommodating groove 3 between the upper sealing portion 21 of the growth ring 2 and the step portion 12 is suitable for a portion of the substrate 200, so that the upper sealing ring and the step portion 12 are used to jointly limit and seal the two sides of the substrate 200 in the thickness direction, thereby preventing the substrate 200 from extending in the thickness direction, and preventing the substrate 200 from being thrown out due to the centrifugal force generated by the rotation, so that the growth source gas can stably and reliably grow epitaxially on the substrate 200; at the same time, it is helpful to improve the sealing between the substrate 200 and the upper sealing ring and the step portion 12, and avoid the growth source gas from being atomized in the gap between the substrate 200 and the upper sealing ring and the step portion 12 during the epitaxial growth of the substrate 200.

[0039] The outer peripheral surface of the growth disk 1 is suitable for sealing connection with the lower sealing part 22, so as to prevent the growth source gas from growing from the bottom of the base 11 along the gap between the outer peripheral surface of the growth disk 1 and the lower sealing part 22 to the non-growth surface of the substrate 200 during the epitaxial growth process of the substrate 200.

[0040] Such an arrangement forms a closed epitaxial growth ring supporting jig 100, thereby effectively improving the growth source gas from passing through the gap of the epitaxial growth ring supporting jig 100 or the gap between the epitaxial growth ring supporting jig 100 and the substrate 200 to be plated around the non-growth surface of the substrate 200 during the epitaxial growth process of the substrate 200, thereby effectively improving the atomization phenomenon of the substrate 200. Compared with traditional supporting jigs, the number of rework and polishing steps and the number of cleaning steps of the substrate 200 are reduced, thereby reducing the investment cost, improving the yield of the epitaxial layer of the substrate 200, and increasing the efficiency of shipment.

[0041] According to the epitaxial growth ring supporting jig 100 of the embodiment of the utility model, the gap between the substrate 200 and the upper sealing portion 21 of the growth ring 2, and the gap between the growth ring 2 and the growth disk 1 are basically eliminated through the sealing cooperation between the upper sealing portion 21 of the growth ring 2 and the substrate 200, and the lower sealing portion 22 and the growth disk 1. In this way, during the epitaxial growth process of the substrate 200, the growth source gas is basically prevented from passing through the gap of the epitaxial growth ring supporting jig 100 or the gap between the epitaxial growth ring supporting jig 100 and the substrate 200 to be plated on the non-growth surface of the substrate 200, thereby effectively improving the atomization phenomenon of the substrate 200, reducing the number of rework polishing steps and the number of cleaning steps of the substrate 200, reducing the investment cost, and improving the yield of the epitaxial layer of the substrate 200, thereby increasing the delivery efficiency.

[0042] According to some embodiments of the present invention, referring to Figure 5-Figure 12The lower sealing portion 22 includes a first vertical extension portion 221, a first horizontal extension portion 222, and a second vertical extension portion 223. One end of the first vertical extension portion 221 is connected to one end of the upper sealing portion 21 close to the edge of the growth disk 1, and the other end of the first vertical extension portion 221 extends along the outer circumference of the step portion 12 to the upper surface of the base 11. One end of the first horizontal extension portion 222 is connected to the other end of the first vertical extension portion 221, and the other end of the first horizontal extension portion 222 extends along the upper surface of the base 11 in a direction away from the center of the base 11 to the edge of the upper surface of the base 11. One end of the second vertical extension portion 223 is connected to the other end of the first horizontal extension portion 222, and the other end of the second vertical extension portion 223 extends along the outer circumference of the base 11 to the bottom of the outer circumference of the base 11. That is to say, along the direction away from the upper sealing portion 21, the first vertical extension portion 221, the first horizontal extension portion 222 and the second vertical extension portion 223 are arranged in sequence to facilitate the lower sealing portion 22 to correspond to the outer peripheral surface of the growth disk 1, that is, the first vertical extension portion 221 corresponds to the outer peripheral surface of the step portion 12, the first horizontal extension portion 222 corresponds to the upper surface of the base 11 facing the step portion 12, and the second vertical extension portion 223 corresponds to the outer peripheral surface of the base 11, thereby improving the matching accuracy between the growth ring 2 and the growth disk 1.

[0043] Further, refer to Figure 5-Figure 12 , the first vertical extension part 221 is sealed with the outer circumference of the step part 12; and / or the first horizontal extension part 222 is sealed with the upper surface of the base 11. In other words, only the first vertical extension part 221 can be sealed with the outer circumference of the step part 12; or, only the first horizontal extension part 222 is sealed with the upper surface of the base 11; or, the first vertical extension part 221 is sealed with the outer circumference of the step part 12, and the first horizontal extension part 222 is sealed with the upper surface of the base 11. As a result, it is helpful to block the growth source gas from flowing from the bottom of the base 11 to the substrate 200, thereby preventing the growth source gas from being plated around the non-growth surface of the substrate 200, effectively improving the atomization phenomenon of the substrate 200, and improving the yield of the epitaxial layer of the substrate 200.

[0044] Among them, refer to Figure 6, the size of the substrate 200 is L1, and L1 satisfies: 4 inches ≤ L1 ≤ 8 inches. With such a setting, if L1 is less than 4 inches, the size of the substrate 200 is small, and it is difficult to meet the use requirements of the epitaxial layer of the substrate 200; if L1 is greater than 8 inches, the size of the substrate 200 is large, and the volume of the epitaxial growth ring supporting jig 100 used to support the substrate 200 is large, which increases the volume of the epitaxial growth ring supporting jig 100 and increases the cost of the epitaxial growth ring supporting jig 100. By setting, L1 satisfies 4 inches ≤ L1 ≤ 8 inches, the size of the substrate 200 is appropriate, and the size of the substrate 200 is suitable for the use requirements of the epitaxial layer of the substrate 200. At the same time, the volume of the epitaxial growth ring supporting jig 100 is effectively controlled, and the cost of the epitaxial growth ring supporting jig 100 is reduced.

[0045] For example, the size of the substrate 200 may be 4 inches, 6 inches, or 8 inches, but is not limited thereto.

[0046] According to some embodiments of the present invention, referring to Figure 6 , the portion of the substrate 200 covered by the first horizontal extension 222 has a size L2 along the radial direction of the substrate 200, and L2 satisfies: 2cm≤L2≤8cm. In this configuration, if L2 is less than 2cm, the portion of the substrate 200 covered by the first horizontal extension 222 along the radial direction of the substrate 200 is smaller, and the contact area between the first horizontal extension 222 and the substrate 200 is smaller, which reduces the sealing stability between the first horizontal extension 222 and the substrate 200, making it difficult to ensure the yield of the product. At the same time, the substrate 200 is easily thrown out due to the centrifugal force generated by the rotation, making it difficult for the growth source gas to grow epitaxially on the substrate 200 stably and reliably; if L2 is greater than 8cm, the portion of the substrate 200 covered by the first horizontal extension 222 along the radial direction of the substrate 200 is larger, so that the area of ​​the epitaxial layer that can be formed in the limited area of ​​the substrate 200 is smaller, which makes it difficult to meet the subsequent use needs of the epitaxial layer of the substrate 200, and when the subsequent use needs of the epitaxial layer of the substrate 200 are met, it is easy to increase the cost of the substrate 200. By setting, L2 satisfies 2cm≤L2≤8cm, and the size of the portion of the substrate 200 covered by the first horizontal extension portion 222 in the radial direction of the substrate 200 is appropriate. While meeting the size requirements of the epitaxial layer of the substrate 200, a reliable sealed connection between the substrate 200 and the first horizontal extension portion 222 is ensured, which is beneficial to preventing the substrate 200 from being thrown out due to the centrifugal force generated by the rotation, so that the growth source gas can stably and reliably grow epitaxially on the substrate 200.

[0047] In addition, refer to Figure 5-Figure 12, the contact position between the growth ring 2 and the substrate 200 is chamfered, right-angled, sawtooth-shaped or arc-shaped. Thus, the area of ​​the side where the growth ring 2 contacts the substrate 200 is guaranteed, thereby ensuring the sealing between the growth ring 2 and the substrate 200, preventing the growth source gas from plating around the gap between the growth ring 2 and the substrate 200 to the non-growth surface of the substrate 200, and preventing the non-growth surface of the substrate 200 from being atomized. When the contact position between the growth ring 2 and the substrate 200 is chamfered, sawtooth-shaped or arc-shaped, the area of ​​the side where the growth ring 2 contacts the substrate 200 and is away from the substrate 200 is small, which is beneficial to further reduce the influence of the growth ring 2 on the epitaxial growth on the substrate 200, so that the growth source gas and the substrate 200 are fully in contact and grown, so as to achieve the best epitaxial growth effect.

[0048] According to some embodiments of the utility model, the substrate 200 is a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a silicon carbide substrate or a gallium nitride substrate. Among them, the silicon substrate has high thermal conductivity, good compatibility, low cost and mature processing technology. The indium phosphide substrate has excellent characteristics such as high electron mobility, high electron peak drift velocity, direct bandgap characteristics, high thermal conductivity and high optical transmittance. The gallium arsenide substrate has excellent characteristics such as high electron mobility, direct bandgap characteristics, excellent electrical properties, high output power and high temperature resistance. The silicon carbide substrate has excellent characteristics such as high withstand voltage characteristics, low energy loss, high temperature operation capability, and low cost. The gallium nitride substrate has a wide bandgap characteristic, which is suitable for application under high voltage. In addition, it also has excellent characteristics such as high-speed switching performance, high power density and good thermal conductivity. Therefore, using a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a silicon carbide substrate or a gallium nitride substrate as the substrate 200 is conducive to improving energy efficiency, enhancing the reliability of the substrate 200, and reducing the production cost of the substrate 200.

[0049] Optionally, the growth disk 1 is a graphite piece; and / or the growth ring 2 is a graphite piece. Among them, the graphite piece has excellent high temperature resistance, electrical conductivity, thermal conductivity and chemical stability. Using the graphite piece as the growth disk 1 and / or the growth ring 2 is conducive to increasing the service life of the growth disk 1 and / or the growth ring 2, reducing the friction between the growth disk 1 and / or the growth ring 2 and the substrate 200, and at the same time reducing the processing difficulty of the growth disk 1 and / or the growth ring 2, and improving the processing efficiency of the growth disk 1 and / or the growth ring 2.

[0050] According to some embodiments of the present invention, the growth ring 2 and the growth disk 1 are sealed by gravity. Thus, the use of seals and / or connectors between the growth ring 2 and the growth disk 1 is reduced, the assembly efficiency between the growth ring 2 and the growth disk 1 is increased, and the gap between the growth ring 2 and the growth disk 1 is reduced as much as possible to ensure the sealing between the growth ring 2 and the growth disk 1.

[0051] Optionally, the growth ring 2 and the substrate 200 are sealed by gravity. Thus, the use of seals and / or connectors between the growth ring 2 and the substrate 200 is reduced, and the gap between the growth ring 2 and the substrate 200 is reduced as much as possible to ensure the sealing between the growth ring 2 and the substrate 200, thereby further improving the effect of epitaxial growth on the substrate 200.

[0052] In addition, refer to Figure 1-Figure 4 In the existing right-angle growth ring and growth disk combination supporting fixture or the existing chamfered growth ring and growth disk combination supporting fixture, when taking and placing the substrate 200, the suction pen needs to be in close contact with the growth disk 1, and there is sliding friction between the suction pen and the growth disk 1. At this time, the suction pen is easy to leave marks on the growth disk 1, and powdered graphite is rubbed out on the surface of the growth disk 1. Powdered graphite is easy to produce Downfall defects (that is, powdered graphite will fall on the substrate 200 during the epitaxial growth process to form a drop defect), or powdered graphite is easy to be blown out and fall on the substrate 200 to form a Triangle defect.

[0053] According to the epitaxial growth ring supporting fixture 100 of the embodiment of the present invention, refer to Figure 5-Figure 12 In actual use, first place the substrate 200 on the growth disk 1 with a suction pen, and then gently slide the suction pen to overlap the substrate 200 and the growth disk 1. When the epitaxial growth is completed, first take out the growth ring 2, and then use the suction pen to push the edge of the substrate 200, so that the substrate 200 slides a small part on the upper surface of the growth disk 1, and then use the suction pen to take out the substrate 200. The friction coefficient between the substrate 200 and the growth disk 1 is small, and the sliding friction force generated is small, so powdered graphite will not be rubbed out on the surface of the growth disk 1. In this way, the generation of Downfall defects and Trangle defects can be reduced, that is, the generation of dropped objects of the substrate 200 during the growth process in the growth chamber can be reduced, and the powdered graphite that falls on the substrate 200 after being blown out of the growth chamber to form Triangle defects can be reduced.

[0054] The embodiments of the present invention are described in detail below. It should be noted that the embodiments described below are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention. In addition, if not explicitly stated, all reagents used in the following embodiments are commercially available, or can be synthesized according to this article or known methods, and the reaction conditions not listed are also easily obtained by those skilled in the art.

[0055] Example 1

[0056] Epitaxial growth ring support fixture 100 (refer to Figure 5 and Figure 6): The growth ring 2 is in contact with the substrate 200 for 3mm. The temperature of the etching stage is set to 1500℃, the etching time is set to 300s, and the etching gas is H2; the buffer layer growth temperature is 1550℃, the carbon source flow rate is 30sccm+ the silicon source flow rate is 95sccm+ the growth thickness is 1um; the growth stage temperature is 1580℃, the carbon source flow rate is 100sccm+ the silicon source flow rate is 230sccm+ the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0057] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0058] Example 2

[0059] Epitaxial growth ring support fixture 100 (refer to Figure 5 and Figure 6 ): The growth ring 2 is in contact with the substrate 200 for 4 mm. The etching stage temperature is set at 1500°C, the etching time is set at 300s, and the etching gas is H2; the buffer layer growth temperature is 1550°C, the carbon source flow rate is 30sccm + the silicon source flow rate is 95sccm + the growth thickness is 1um; the growth stage temperature is 1580°C, the carbon source flow rate is 100sccm + the silicon source flow rate is 230sccm + the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0060] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0061] Example 3

[0062] Epitaxial growth ring support fixture 100 (refer to Figure 5 and Figure 6): The growth ring 2 is in contact with the substrate 200 for 5 mm. The etching stage temperature is set at 1500°C, the etching time is set at 300s, and the etching gas is H2; the buffer layer growth temperature is 1550°C, the carbon source flow is 30sccm+ the silicon source flow is 95sccm+ the growth thickness is 1um; the growth stage temperature is 1580°C, the carbon source flow is 100sccm+ the silicon source flow is 230sccm+ the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0063] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0064] Example 4

[0065] Epitaxial growth ring support fixture 100 (refer to Fig.11 and Fig.12 ): The growth ring 2 is in contact with the substrate 200 for 4 mm. The etching stage temperature is set at 1500°C, the etching time is set at 300s, and the etching gas is H2; the buffer layer growth temperature is 1550°C, the carbon source flow rate is 30sccm + the silicon source flow rate is 95sccm + the growth thickness is 1um; the growth stage temperature is 1580°C, the carbon source flow rate is 100sccm + the silicon source flow rate is 230sccm + the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0066] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0067] Example 5

[0068] Epitaxial growth ring support fixture 100 (refer to Figure 7 and Figure 8): The growth ring 2 is in contact with the substrate 200 for 4 mm. The etching stage temperature is set at 1500°C, the etching time is set at 300s, and the etching gas is H2; the buffer layer growth temperature is 1550°C, the carbon source flow rate is 30sccm + the silicon source flow rate is 95sccm + the growth thickness is 1um; the growth stage temperature is 1580°C, the carbon source flow rate is 100sccm + the silicon source flow rate is 230sccm + the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0069] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0070] Example 6

[0071] Epitaxial growth ring support fixture 100 (refer to Fig. 9 and Fig.10 ): The growth ring 2 is in contact with the substrate 200 for 4 mm. The etching stage temperature is set at 1500°C, the etching time is set at 300s, and the etching gas is H2; the buffer layer growth temperature is 1550°C, the carbon source flow rate is 30sccm + the silicon source flow rate is 95sccm + the growth thickness is 1um; the growth stage temperature is 1580°C, the carbon source flow rate is 100sccm + the silicon source flow rate is 230sccm + the growth thickness is 10um, and the same batch of substrates 200 are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0072] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0073] Comparative Example 1

[0074] The existing right-angle growth ring and growth disk combined bearing fixture (refer to Figure 1-Figure 3): The temperature of the etching stage is set to 1500℃, the etching time is set to 300s, and the etching gas is H2; the buffer layer growth temperature is 1550℃, the carbon source flow rate is 30sccm+ the silicon source flow rate is 95sccm+ the growth thickness is 1um; the growth stage temperature is 1580℃, the carbon source flow rate is 100sccm+ the silicon source flow rate is 230sccm+ the growth thickness is 10um, and 200 substrates from the same batch are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0075] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0076] Comparative Example 2

[0077] The existing chamfered growth ring and growth disk combined bearing fixture (refer to Figure 4 ): The temperature of the etching stage is set to 1500℃, the etching time is set to 300s, and the etching gas is H2; the buffer layer growth temperature is 1550℃, the carbon source flow rate is 30sccm+ the silicon source flow rate is 95sccm+ the growth thickness is 1um; the growth stage temperature is 1580℃, the carbon source flow rate is 100sccm+ the silicon source flow rate is 230sccm+ the growth thickness is 10um, and 200 substrates from the same batch are used to continuously grow 3pcs of the same process, and then the strong light is tested to observe the degree of atomization, and the thickness and uniformity, concentration and uniformity, number of fatal defects, roughness, and flatness are recorded at the same time.

[0078] The process is as follows: ① Heating to 1500℃; ② Etching at 1500℃ for 300s; ③ Grow 1um buffer layer at 1550℃; ④ Grow 10um epitaxial layer at 1580℃; ⑤ Test defects, strong light, flatness, roughness, thickness, concentration, observe atomization effect and other test data.

[0079] Table 1 Atomization grades in Examples 1-6 and Comparative Examples 1-2

[0080]

[0081] By using the epitaxial growth ring supporting fixture 100 of the present invention in conjunction with an epitaxial growth process, the effect of the epitaxial growth ring supporting fixture 100 can be verified through the following test items: Strong light test: Observe the degree of atomization of the non-growth surface of the substrate 200.

[0082] Table 2 Phenomena of different atomization levels

[0083]

[0084] The experimental test results are:

[0085] Through experimental comparison, the existing right-angle growth ring and growth disk combination supporting jig and the existing chamfered growth ring and growth disk combination supporting jig are severely atomized during the epitaxial growth process and cannot meet the shipping standards; the epitaxial growth ring supporting jig 100 has no atomization phenomenon when it contacts the substrate 200 with a width of 5mm, which can meet the shipping requirements. Other epitaxial growth ring supporting jigs 100 can also meet the shipping requirements, but the contact position between the growth ring 2 and the substrate 200 in the epitaxial growth ring supporting jig 100 is chamfered, which has a better effect. The epitaxial growth ring supporting jig 100 will not affect the test data such as concentration, thickness, roughness, and flatness during the epitaxial growth process.

[0086] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0087] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. An epitaxial growth ring support fixture, characterized in that: include: A growth tray, the growth tray comprising a base and a step portion protruding from an upper surface of the base; a growth ring, the growth ring being arranged around the outer periphery of the growth disk, the growth ring comprising an upper sealing portion and a lower sealing portion connected to each other, The upper sealing portion covers a portion of the upper surface of the step portion in parallel and is spaced apart from a portion of the upper surface of the step portion to form a receiving groove, so that the substrate in the receiving groove is sealed with the upper sealing portion. One end of the lower sealing portion is connected to one end of the upper sealing portion close to the edge of the growth disk, and the other end of the lower sealing portion extends toward the base to the bottom of the outer peripheral surface of the base, and the lower sealing portion is arranged close to the outer peripheral surface of the growth disk so that the lower sealing portion is sealed with the outer peripheral surface of the growth disk.

2. The epitaxial growth ring supporting fixture according to claim 1, characterized in that: The lower sealing portion comprises: a first vertical extension portion, one end of which is connected to one end of the upper sealing portion close to the edge of the growth plate, and the other end of which extends along the outer peripheral surface of the step portion to the upper surface of the base, a first horizontal extension portion, one end of which is connected to the other end of the first vertical extension portion, and the other end of which extends along the upper surface of the base in a direction away from the center of the base to an edge of the upper surface of the base; A second vertical extension portion, one end of the second vertical extension portion is connected to the other end of the first horizontal extension portion, and the other end of the second vertical extension portion extends along the outer circumferential surface of the base to the bottom of the outer circumferential surface of the base.

3. The epitaxial growth ring supporting fixture according to claim 2, characterized in that: The first vertical extension portion is sealed to the outer peripheral surface of the step portion; and / or The first horizontal extension portion is sealed to the upper surface of the base.

4. The epitaxial growth ring supporting fixture according to claim 1, characterized in that: The size of the substrate is L1, and L1 satisfies: 4 inches ≤ L1 ≤ 8 inches.

5. The epitaxial growth ring supporting fixture according to claim 2, characterized in that: The first horizontal extension portion covers a portion of the substrate, and has a dimension L2 along the radial direction of the substrate, where L2 satisfies: 2cm≤L2≤8cm.

6. The epitaxial growth ring supporting fixture according to claim 1, characterized in that: The contact position between the growth ring and the substrate is in a chamfered shape, a right angle shape, a sawtooth shape or an arc shape.

7. The epitaxial growth ring supporting fixture according to claim 1, characterized in that: The substrate is a silicon substrate, an indium phosphide substrate, a gallium arsenide substrate, a silicon carbide substrate or a gallium nitride substrate.

8. The epitaxial growth ring supporting fixture according to claim 1, characterized in that: The growth disk is a graphite piece; and / or The growth ring is a graphite piece.

9. The epitaxial growth ring supporting fixture according to any one of claims 1 to 8, characterized in that: The growth ring and the growth disk are sealed by gravity.

10. The epitaxial growth ring supporting fixture according to any one of claims 1 to 8, characterized in that: The growth ring and the substrate are sealed by gravity.

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