Transverse MOS (Metal Oxide Semiconductor) device with low on-resistance

Abstract

The utility model relates to a transverse MOS device with low on-resistance, which comprises a fixed box, an MOS device main body is arranged in the fixed box, the right end of the MOS device main body is fixedly communicated with a connecting plate, the left end of the MOS device main body is fixedly communicated with connecting guide strips which are arranged at equal intervals, the upper surface of the connecting plate is provided with a connecting through groove, and the connecting through groove is communicated with the connecting guide strips. Symmetrical limiting grooves are formed in the outer surface of the connecting plate, a clamping groove is formed in the upper surface of the fixing box, a clamping plate is fixedly connected to the bottom face of the fixing box, and two sets of heat conduction pieces are fixedly connected to the outer surface of the fixing box. Through the cooperation of the limiting groove, the clamping groove and the clamping plate, a worker can conveniently install the MOS device main body, the installation efficiency of the worker is improved, heat dissipation can be performed on the MOS device main body by using the two groups of heat-conducting fins, and heat accumulation is avoided.

Description

[Technical field]

[0001] The utility model relates to the field of MOS devices, in particular to a lateral MOS device with low on-resistance. [Background technology]

[0002] With the rapid development of the semiconductor industry, power electronics technology represented by high-power semiconductor devices has developed rapidly, and its application areas have been continuously expanded, such as AC motor control and printer drive circuits. Among various power devices today, lateral diffusion LDMOS has high operating voltage and relatively simple process, so LDMOS has broad development prospects. In the design of LDMOS devices, breakdown voltage and on-resistance have always been the main goals that people pay attention to when designing such devices. The thickness of the epitaxial layer, doping concentration, and length of the drift region are the most important parameters of LDMOS. The breakdown voltage can be increased by increasing the length of the drift region, but this will increase the chip area and on-resistance. The requirements for withstand voltage and on-resistance for the concentration and thickness of the epitaxial layer are contradictory.

[0003] High breakdown voltage requires thick lightly doped epitaxial layer and long drift region, while low on-resistance requires thin heavily doped epitaxial layer and short drift region. Therefore, the optimal epitaxial parameters and drift region length must be selected to obtain the minimum on-resistance under the premise of meeting a certain source-drain breakdown voltage. RESURF has been widely used in the design of high-voltage devices. This principle requires that the drift region charge and substrate charge reach charge balance so that the drift region can withstand a higher withstand voltage when it is completely depleted. With the development of miniaturization of MOS devices, current MOS devices are inconvenient to install. When the MOS device is working, heat is more likely to accumulate, affecting the conduction effect of the MOS device. To this end, we propose a low on-resistance lateral MOS device to solve the above problems. [Contents of the utility model]

[0004] In order to solve the above problems, the purpose of the utility model is to provide a lateral MOS device with low on-resistance.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the utility model is: a lateral MOS device with low on-resistance, including a fixing box, a MOS device body is installed inside the fixing box, the right end of the MOS device body is fixedly connected to a connecting plate, the left end of the MOS device body is fixedly connected to connecting conductive bars arranged at equal distances, the upper surface of the connecting plate is provided with a connecting through groove, the outer surface of the connecting plate is provided with a symmetrical limiting groove, the upper surface of the fixing box is provided with a clamping groove, the bottom surface of the fixing box is fixedly connected to a clamping plate, and the outer surface of the fixing box is fixedly connected to two groups of heat conducting sheets.

[0006] The low on-resistance lateral MOS device in the utility model is further configured as follows: a sealing ring is fixedly connected to the outer surface of the connecting plate, a symmetrical groove is opened on the upper surface of the fixing box, and a symmetrical protective frame is fixedly connected to the outer surface of the fixing box.

[0007] The low on-resistance lateral MOS device in the utility model is further configured as follows: the inner bottom walls of the two grooves are provided with heat dissipation through holes, and the inner wall of each heat dissipation through hole is fixedly connected with a dustproof net.

[0008] The low on-resistance lateral MOS device in the utility model is further configured as follows: a sealing cylinder is fixedly connected to the left side surface of the fixing box, and the inner wall of the sealing cylinder is fixedly connected to the outer surface of the connecting conductor.

[0009] The low on-resistance lateral MOS device in the utility model is further configured as follows: the inner bottom wall of the fixing box is fixedly connected with heat-conducting blocks arranged at equal distances, and the upper surface of each heat-conducting block is fixedly connected to the bottom surface of the MOS device body.

[0010] The low on-resistance lateral MOS device in the utility model is further configured as follows: a barrier block is provided inside the sealing cylinder, and the outer surface of each barrier block is fixedly connected to the inner wall of the sealing cylinder.

[0011] Compared with the prior art, the utility model has the following beneficial effects: the above-mentioned low on-resistance lateral MOS device can protect the MOS device body through the fixing box, and can facilitate the connection of the MOS device body by the staff through the cooperation of the connecting plate and the connecting conductor, and can facilitate the installation of the MOS device body by the staff through the cooperation of the limiting groove, the card slot and the card plate, thereby improving the installation efficiency of the staff, and can dissipate the heat of the MOS device body by using two sets of heat conducting sheets to avoid heat accumulation and prevent the conduction effect of the MOS device body from being affected.

Brief Description of the Drawings

[0012] Figure 1 It is a three-dimensional structural schematic diagram of a lateral MOS device with low on-resistance of the utility model.

[0013] Figure 2 It is a cross-sectional view of a top view of a fixing box in a lateral MOS device with low on-resistance of the utility model.

[0014] Figure 3 It is a cross-sectional view of a side view of a fixing box in a lateral MOS device with low on-resistance of the utility model.

[0015] Figure 4 It is a rear view of a fixing box in a lateral MOS device with low on-resistance of the utility model.

[0016] In the figure: 1. fixing box; 2. MOS device body; 3. connecting guide bar; 4. connecting plate; 5. connecting through groove; 6. limiting groove; 7. clamping slot; 8. clamping plate; 9. sealing cylinder; 10. protective frame; 11. heat conducting sheet; 12. barrier block; 13. heat conducting block; 14. sealing ring; 15. groove; 16. heat dissipation hole; 17. dustproof net. [Specific implementation method]

[0017] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model. The lateral MOS device with low on-resistance described in the utility model is further described in detail through specific embodiments.

[0018] like Figure 1-4 As shown, a lateral MOS device with low on-resistance comprises a fixing box 1, a MOS device body 2 is installed inside the fixing box 1, a connecting plate 4 is fixedly connected to the right end of the MOS device body 2, a connecting strip 3 arranged at equal distances is fixedly connected to the left end of the MOS device body 2, a connecting through groove 5 is provided on the upper surface of the connecting plate 4, a symmetrical limiting groove 6 is provided on the outer surface of the connecting plate 4, a clamping groove 7 is provided on the upper surface of the fixing box 1, a clamping plate 8 is fixedly connected to the bottom surface of the fixing box 1, and two groups of heat conducting sheets 11 are fixedly connected to the outer surface of the fixing box 1. The MOS device body 2 can be protected by the fixing box 1, the connection plate 4 and the connecting strip 3 are used to facilitate the connection of the MOS device body 2 by the staff, the limiting groove 6, the clamping groove 7 and the clamping plate 8 are used to facilitate the installation of the MOS device body 2 by the staff, and the installation efficiency of the staff is improved, and the two groups of heat conducting sheets 11 can be used to dissipate the heat of the MOS device body 2 to avoid heat accumulation and prevent the conduction effect of the MOS device body 2 from being affected.

[0019] A sealing ring 14 is fixedly connected to the outer surface of the connecting plate 4, a symmetrical groove 15 is provided on the upper surface of the fixing box 1, a symmetrical protective frame 10 is fixedly connected to the outer surface of the fixing box 1, and the inner bottom walls of the two grooves 15 are provided with heat dissipation holes 16, and the inner wall of each heat dissipation hole 16 is fixedly connected to a dustproof net 17. The sealing ring 14 can be used to seal the connecting plate 4, and the heat dissipation holes 16 can be used to ventilate and dissipate heat inside the fixing box 1. The dustproof net 17 can prevent external dust from entering the interior of the fixing box 1, thereby improving the protection of the MOS device body 2, and the protective frame 10 can be used to protect the heat conducting sheet 11.

[0020] A sealing cylinder 9 is fixedly connected to the left side surface of the fixing box 1, and the inner wall of the sealing cylinder 9 is fixedly connected to the outer surface of the connecting conductor 3. The inner bottom wall of the fixing box 1 is fixedly connected to heat-conducting blocks 13 arranged at equal distances, and the upper surface of each heat-conducting block 13 is fixedly connected to the bottom surface of the MOS device body 2. A blocking block 12 is provided inside the sealing cylinder 9, and the outer surface of each blocking block 12 is fixedly connected to the inner wall of the sealing cylinder 9. The connection of the connecting conductor 3 can be sealed by the sealing cylinder 9, and the heat on the surface of the MOS device body 2 can be derived by using the heat-conducting blocks 13, thereby improving the heat dissipation effect of the MOS device body 2, and each connecting conductor 3 can be isolated by the blocking block 12.

[0021] The working principle of the utility model is as follows: when in use, firstly, the connecting plate 4 is connected by the connecting through groove 5, then the MOS device body 2 is protected by the fixing box 1, and then the connection plate 4 and the connecting guide bar 3 are used in cooperation to facilitate the staff to connect the MOS device body 2, and then the limiting groove 6, the clamping groove 7 and the clamping plate 8 are used in cooperation to facilitate the staff to install the MOS device body 2, thereby improving the installation efficiency of the staff, and then the two groups of heat conducting sheets 11 are used to dissipate the heat of the MOS device body 2 to avoid heat accumulation.

[0022] The above embodiments are only illustrative of the principles and effects of the invention, as well as some embodiments of its application, and are not intended to limit the invention. It should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the invention, and these all belong to the scope of protection of the invention. The scope of the invention is defined by the appended claims rather than the above description, and therefore, it is intended to include all changes within the meaning and scope of the equivalent elements of the claims in the invention. Any reference numerals in the claims should not be considered as limiting the claims involved.

[0023] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A lateral MOS device with low on-resistance, comprising a fixing box (1), characterized in that: A MOS device body (2) is installed inside the fixing box (1); a connecting plate (4) is fixedly connected to the right end of the MOS device body (2); a connecting conductor (3) arranged at equal distances is fixedly connected to the left end of the MOS device body (2); a connecting through groove (5) is provided on the upper surface of the connecting plate (4); a symmetrical limiting groove (6) is provided on the outer surface of the connecting plate (4); a clamping groove (7) is provided on the upper surface of the fixing box (1); a clamping plate (8) is fixedly connected to the bottom surface of the fixing box (1); and two groups of heat conducting sheets (11) are fixedly connected to the outer surface of the fixing box (1).

2. A lateral MOS device with low on-resistance as claimed in claim 1, characterized in that: A sealing ring (14) is fixedly connected to the outer surface of the connecting plate (4), a symmetrical groove (15) is provided on the upper surface of the fixing box (1), and a symmetrical protective frame (10) is fixedly connected to the outer surface of the fixing box (1).

3. A lateral MOS device with low on-resistance as claimed in claim 2, characterized in that: The inner bottom walls of the two grooves (15) are each provided with a heat dissipation through hole (16), and the inner wall of each heat dissipation through hole (16) is fixedly connected with a dustproof net (17).

4. A lateral MOS device with low on-resistance as claimed in claim 1, characterized in that: A sealing cylinder (9) is fixedly connected to the left side surface of the fixing box (1), and the inner wall of the sealing cylinder (9) is fixedly connected to the outer surface of the connecting guide bar (3).

5. A lateral MOS device with low on-resistance as claimed in claim 1, characterized in that: The inner bottom wall of the fixing box (1) is fixedly connected with heat conducting blocks (13) arranged at equal distances, and the upper surface of each heat conducting block (13) is fixedly connected to the bottom surface of the MOS device body (2).

6. A lateral MOS device with low on-resistance as claimed in claim 4, characterized in that: The sealing cylinder (9) is provided with a barrier block (12) inside, and the outer surface of each barrier block (12) is fixedly connected to the inner wall of the sealing cylinder (9).

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