Gallium nitride wafer measuring platform deck

By designing a gallium nitride wafer measurement stage containing XYR three-axis displacement platform and magnifying glass, the problems of low positioning accuracy and complex structure of the existing detection devices are solved, and the wafer flat edge with high accuracy and low error is achieved Measurement.

CN222483291UActive Publication Date: 2025-02-14ETA SEMICON TECH(TONG LING) CO LTD
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Patent Information

Application Number
CN202420174123.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-01-24
Publication Date
2025-02-14
Estimated Expiration
2034-01-24

AI Technical Summary

Technical Problem

The existing gallium nitride wafer side flat edge detection device has low positioning accuracy and complex structure and high maintenance costs.

Method used

A gallium nitride wafer measurement stage is designed, including columns, XYR three-axis displacement platform, stops, wafer stages, circular storage tanks, support columns and magnifying glasses, and accurate through the three-axis displacement platform and magnifying glass. Positioning and observing.

Benefits of technology

It realizes simple and fast wafer flat edge measurement, low measurement error, easy to operate precise positioning and good practicality.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a gallium nitride wafer measuring platform deck. The gallium nitride wafer measuring platform deck comprises a stand column (2); the XYR three-axis displacement platform is mounted on one side of the stand column; the two check blocks (7) are fixedly connected to the edge of one side of the top of the stand column and are symmetrically distributed at intervals; the wafer carrying table (8) is mounted on the XYR three-axis displacement platform; the circular storage groove is formed in the wafer carrying table, and the circular storage groove is provided with notches right opposite to the two check blocks; the supporting column (12) is vertically mounted on the other side of the stand column; and the magnifying lens (6) is mounted at the top of the supporting column and located above the circular storage groove. The utility model has the beneficial effects that a method for measuring the flat edge of the wafer is provided, the method is simple and rapid, the flatness of the flat edge of the wafer can be tested, and the measurement error is low; and the wafer can rotate and move left and right, and is easy to operate and good in practicability.
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Description

Technical Field

[0001] The utility model relates to a gallium nitride wafer detection platform, in particular to a device for detecting the flatness of a gallium nitride wafer. Background Art

[0002] The hydride vapor phase epitaxial growth process is mainly used to epitaxially grow a thick film or crystal such as GaAs, GaN, etc. on the substrate surface through hydride gases such as H2 and HCl in a high temperature environment, which is called a gallium nitride wafer. If the flatness of the wafer is defective after cutting, the overall quality of the wafer will be reduced.

[0003] The wafer side flatness detection device is an auxiliary device used to detect the flatness of the side surface of the gallium nitride wafer. The existing wafer side flatness detection device is placed on a platform, and the operator uses tweezers to slowly move the wafer to adjust the position; and there is no magnifying observation mirror as an auxiliary observation tool, which makes the adjustment and positioning accuracy low, and also consumes a lot of detection time.

[0004] China Utility Model Patent Publication No. CN208922062U discloses a wafer flat edge calibration device and a photolithography machine using the same, wherein the detection mechanism is used to detect the flat edge position of the wafer on the carrier, and when the flat edge position of the wafer is detected, a rotation stop signal is sent to the first driving mechanism to calibrate the flat edge of the wafer to a preset position. Although the detection mechanism can operate automatically, it has a complex structure and high maintenance costs. Utility Model Content

[0005] The technical problem to be solved by the utility model is that the existing wafer side flat edge detection device has low positioning accuracy or a complex structure and high maintenance cost, and for this purpose a gallium nitride wafer measurement platform is provided.

[0006] The technical solution of the utility model is: a gallium nitride wafer measuring platform, comprising: a column; an XYR three-axis displacement platform, the XYR three-axis displacement platform is installed on one side of the column; two blocks, the two blocks are fixedly connected to the edge of one side of the top of the column and are symmetrically distributed at intervals; a wafer carrier, the wafer carrier is installed on the XYR three-axis displacement platform; a circular storage groove, the circular storage groove is opened on the wafer carrier, and the circular storage groove is opened with a notch facing the two blocks; a support column, the support column is vertically installed on the other side of the column; a magnifying glass, the magnifying glass is installed on the top of the support column and is located above the circular storage groove.

[0007] In the above solution, the other side of the column is fixedly connected to a platform, and the support column is vertically installed on the platform.

[0008] The magnifying glass in the above solution is detachably mounted on the supporting column by adjusting the nut.

[0009] The improvement of the above solution is that a negative pressure hole connected to the vacuum tube is opened in the circular storage tank.

[0010] A further improvement of the above solution is that the column is installed on a base.

[0011] The beneficial effects of the utility model are to provide a wafer flat edge measurement method, which is simple and fast, can measure the flatness of the wafer flat edge, and has low measurement error; the wafer can be accurately positioned, rotated left and right, and is easy to operate and has good practicality. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the utility model;

[0013] Figure 2 yes Figure 1 3D rendering of

[0014] In the figure, 1. base, 2. column, 3. fixed base, 4. vacuum tube, 5. adjusting nut, 6. magnifying glass, 7. stopper, 8. wafer carrier, 9. R-axis rotating axis, 10. X-axis moving axis, 11. Y-axis moving axis, 12. supporting column. DETAILED DESCRIPTION

[0015] The technical scheme in the embodiment of the utility model is clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments of ordinary technicians in this field without creative work are within the protection scope of the utility model.

[0016] like Figure 1-2 As shown, the utility model includes: a gallium nitride wafer measurement platform, including: a column 2; an XYR three-axis displacement platform, the XYR three-axis displacement platform is installed on one side of the column; two blocks 7, the two blocks are fixedly connected to the edge of one side of the top of the column and are symmetrically distributed; a wafer carrier 8, the wafer carrier is installed on the XYR three-axis displacement platform; a circular storage groove, the circular storage groove is opened on the wafer carrier, and the circular storage groove is provided with a notch facing the two blocks; a support column 12, the support column is vertically installed on the other side of the column; a magnifying glass 6, the magnifying glass is installed on the top of the support column and is located above the circular storage groove.

[0017] The specific model of the XYR three-axis displacement platform may be LS P60-LM, LS60-LM, including an X-axis moving axis 10, a Y-axis moving axis 11 and an R-axis rotating axis 9, and can move along the X-axis and Y-axis directions and rotate along the R-axis direction.

[0018] The support column can be directly fixed on the column, or a platform can be fixed on the other side of the column, and the support column is vertically installed on the platform.

[0019] The magnifying glass is preferably a high-power magnifying glass, which is detachably mounted on the support column by adjusting the nut 5. The height of the magnifying glass can be adjusted by adjusting the nut to adjust the distance between the magnifying glass and the wafer.

[0020] As a preferred example of the present invention, a negative pressure hole connected to the vacuum tube 4 is provided in the circular storage tank. In order to ensure the stability of the system, the column is installed on the base 1.

[0021] The measurement method is as follows: 1. After placing the wafer into the circular storage tank, the vacuum suction tube absorbs the wafer.

[0022] 2. Adjust the X-axis moving axis to the required position according to the value on the handle dial.

[0023] 3. Then adjust the Y-axis moving axis to directly press against the flat edge of the wafer, and use the extreme protection adjustment device of the handle, and it will stop automatically after pressing against it.

[0024] 4. Use a magnifying glass to observe the flat edge of the wafer to see if it fits the block. If not, use the R-axis rotation axis to fine-tune the angle.

[0025] 5. (Note) The wafer carrier can be replaced according to the size required.

[0026] 6. Irradiate the light beam onto the flat edge of the wafer to produce diffraction. The diffraction lines are received by the counter tube and the values ​​are displayed after passing through the amplifier.

[0027] The X-axis moving axis, Y-axis moving axis, and R-axis rotating axis all have locking nuts.

Claims

1. A gallium nitride wafer measurement stage, characterized by: include: A column (2); an XYR three-axis displacement platform, the XYR three-axis displacement platform being installed on one side of the column; two blocks (7), the two blocks being fixedly connected to the edge of one side of the top of the column and being symmetrically distributed; a wafer carrier (8), the wafer carrier being installed on the XYR three-axis displacement platform; a circular storage slot, the circular storage slot being opened on the wafer carrier, the circular storage slot being provided with a notch facing the two blocks; a support column (12), the support column being vertically installed on the other side of the column; and a magnifying glass (6), the magnifying glass being installed on the top of the support column and being located above the circular storage slot.

2. A gallium nitride wafer measurement stage as claimed in claim 1, characterized in that: A platform is fixedly connected to the other side of the column, and the support column is vertically installed on the platform.

3. The gallium nitride wafer measurement stage according to claim 1, characterized in that: The magnifying glass is detachably mounted on the supporting column via an adjusting nut (5).

4. The gallium nitride wafer measurement stage according to claim 1, characterized in that: A negative pressure hole connected to the vacuum tube (4) is provided in the circular storage tank.

5. The gallium nitride wafer measurement stage according to claim 1, characterized in that: The column is mounted on the base (1).

Citation Information

Patent Citations

  • Wafer flat edge calibration device and photoetching machine applying same

    CN208922062U