MOSFET power device with high-precision temperature measurement

Abstract

The utility model discloses a high-precision temperature measurement MOSFET power device, and relates to the technical field of power devices. The device comprises an epitaxial wafer, an MOSFET component and a temperature detection component, wherein the MOSFET component and the temperature detection component are arranged on the epitaxial wafer; the temperature detection component comprises n PN junction diode modules, a cathode connecting piece and an anode connecting piece; the n PN junction diode modules are connected in series, and the anode connecting piece and the cathode connecting piece are respectively arranged at two ends of the n PN junction diode modules which are connected in series; the anode connecting piece is connected with the anode of the adjacent PN junction diode module, and the cathode connecting piece is connected with the cathode of the adjacent PN junction diode module. According to the utility model, the n PN junction diode modules which are connected in series are arranged, so that the purpose of amplifying signals can be achieved, the detection sensitivity of a temperature detection part in an MOSFET power device is improved, and high-precision temperature measurement is realized.

Description

Technical Field

[0001] The utility model relates to the technical field of power devices, in particular to a MOSFET power device with high-precision temperature measurement. Background Art

[0002] MOSFET can be roughly divided into the following categories: planar MOSFET; Trench MOSFET, mainly used in low voltage field; SGT (Shielded Gate Transistor, shielded gate trench) MOSFET, mainly used in medium voltage and low voltage field; SJ-(super junction) MOSFET, mainly used in high voltage field. Existing MOSFET has integrated temperature detection components (such as temperature sensor diodes), which measure the junction temperature of the entire power device through the integrated temperature detection components.

[0003] Existing MOSFET device structures with integrated temperature detection without external high potential are as follows: Figure 1 As shown, the simplified circuit diagram is as follows Figure 2 As shown. The existing MOSFET device structure with integrated temperature detection integrates a temperature sensing diode. For the integrated silicon diode, the forward voltage drops by about 2mV for every 1°C increase in temperature. However, the change of about 2mV / °C is too small. The forward voltage drop of the diode is affected by the device manufacturing process and causes slight changes. The junction temperature error read by the temperature detection sensor diode will be relatively large. Therefore, it is necessary to reasonably design the sensor's amplification circuit to improve the sensitivity of the sensor.

[0004] In the process of implementing the utility model, the inventors found that there are at least the following problems in the prior art:

[0005] The forward voltage drop of the temperature sensing diode in the existing integrated temperature detection power device changes little with the junction temperature, and errors may occur in the detection, affecting the sensitivity of the temperature sensing diode. Utility Model Content

[0006] The purpose of the utility model is to provide a MOSFET power device with high-precision temperature measurement, so as to solve the technical problem that the forward voltage drop of the temperature sensing diode in the integrated temperature detection power device in the prior art changes little with the junction temperature, and the detection error occurs, which affects the sensitivity of the temperature sensing diode. The preferred technical solution among the many technical solutions provided by the utility model can produce many technical effects as described below.

[0007] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0008] The utility model provides a high-precision temperature measurement MOSFET power device, comprising: an epitaxial wafer, and a MOSFET component and a temperature detection component arranged on the epitaxial wafer;

[0009] The temperature detection component comprises n PN junction diode modules, cathode connectors and anode connectors; the n PN junction diode modules are connected in series, and the anode connector and cathode connector are respectively arranged at both ends of the n PN junction diode modules connected in series;

[0010] The anode connector is connected to the anode of the adjacent PN junction diode module, and the cathode connector is connected to the cathode of the adjacent PN junction diode module.

[0011] Optionally, each of the PN junction diode modules includes a first doped region, a second doped region, a dielectric layer, a cathode contact hole, and an anode contact hole; the first doped region is located on the epitaxial wafer, and the dielectric layer is located on the first doped region; the second doped region is located in a designated area of ​​the first doped region and is in contact with the dielectric layer; the anode contact hole passes through the dielectric layer and is in contact with the first doped region; the cathode contact hole passes through the dielectric layer, is arranged corresponding to the designated area, and is in contact with the second doped region;

[0012] The anode contact holes and cathode contact holes of two adjacent PN junction diode modules are connected via an electrode connection area.

[0013] Optionally, the electrode connection area includes a metal contact electrode and a metal electrode layer; the metal contact electrode is located in the anode contact hole and the cathode contact hole, and the metal electrode layer is located above the dielectric layer and is arranged at a position corresponding to the anode contact hole and the cathode contact hole.

[0014] Optionally, the depth of the anode contact hole is greater than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and less than the sum of the thickness of the dielectric layer and the thickness of the first doping region;

[0015] The depth of the cathode contact hole is less than the sum of the thickness of the dielectric layer and the thickness of the second doping region, and is not less than the thickness of the dielectric layer.

[0016] Optionally, each of the PN junction diode modules also includes: a third doping region; the third doping region is located at the bottom of the anode contact hole; the injected ions of the third doping region are of the same type as the injected ions of the first doping region, and the concentration of the injected ions of the third doping region is greater than the concentration of the injected ions of the first doping region.

[0017] Optionally, each of the PN junction diode modules further includes: an isolation region, wherein the isolation region is located in the epitaxial wafer and is located on a side of the cathode contact hole away from the anode contact hole.

[0018] Optionally, the isolation region includes an isolation groove, an outer dielectric layer and an inner dielectric layer, the outer dielectric layer is located on the bottom and sidewalls of the isolation groove, and the inner dielectric layer is located in a space formed by the outer dielectric layer.

[0019] Optionally, the isolation groove has a depth ranging from 1 μm to 2 μm and a width ranging from 0.3 μm to 1.5 μm.

[0020] Optionally, the power device further includes: a back metal layer, wherein the back metal layer is located below the epitaxial wafer.

[0021] Optionally, n in the n PN junction diode modules is ≥2.

[0022] Implementing one of the above technical solutions of the utility model has the following advantages or beneficial effects:

[0023] The utility model is provided with n PN junction diode modules connected in series to achieve the purpose of amplifying the electrical signal, which can improve the sensitivity of the temperature detection component in the MOSFET power device and realize high-precision temperature measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0025] Figure 1 It is a schematic diagram of the cross-section structure of an existing integrated temperature detection MOSFET device;

[0026] Figure 2 It is a simplified circuit diagram of an existing integrated temperature sensing MOSFET;

[0027] Figure 3 It is a schematic diagram of the overall structure of the MOSFET power device for high-precision temperature measurement of the utility model;

[0028] Figure 4 This is a schematic diagram of the placement of the temperature detection component on the MOSFET component in the utility model;

[0029] Figure 5It is a curve diagram showing the relationship between Vf and Tj of one PN junction diode and three PN junction diodes connected in series in the utility model;

[0030] Figure 6 It is a structural schematic diagram of the temperature detection component in the utility model;

[0031] Figure 7 It is a structural schematic diagram of the MOSFET component in the utility model.

[0032] In the figure: 1, epitaxial wafer; 11, substrate; 12, epitaxial layer; 13, back metal layer; 2, MOSFET component; 21, cell structure; 211, first body doping region; 212, second body doping region; 213, gate region; 2131, gate groove; 2132, dielectric layer inside the gate; 2133, dielectric layer outside the gate; 214, body electrode region; 215, body contact hole; 216, body contact electrode; 217, third body doping region; 218, body dielectric layer; 22, terminal region; 2 3. Source metal layer; 24. Contact area; 3. Temperature detection component; 31. PN junction diode module; 311. First doping area; 312. Second doping area; 313. Dielectric layer; 314. Cathode contact hole; 315. Anode contact hole; 32. Electrode connection area; 321. Metal contact electrode; 322. Metal electrode layer; 323. Third doping area; 33. Isolation area; 331. Isolation groove; 332. Outer dielectric layer; 333. Inner dielectric layer; 34. Anode connector; 35. Cathode connector. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the utility model clearer, the various exemplary embodiments to be described below will refer to the corresponding drawings, which constitute a part of the exemplary embodiments, wherein various exemplary embodiments that may be used to implement the utility model are described. Unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation methods described in the following exemplary embodiments do not represent all implementation methods consistent with the present disclosure. It should be understood that they are only examples of processes, methods, and devices that are consistent with some aspects of the utility model disclosed as detailed in the attached claims, and other embodiments may also be used, or the embodiments listed herein may be modified in structure and function without departing from the scope and essence of the utility model.

[0034] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", etc. indicate the orientation or position relationship based on the drawings, which is only for the convenience of describing the utility model and simplifying the description, rather than indicating or implying that the elements referred to must have a specific orientation, be constructed and operated in a specific orientation. The terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. The term "multiple" means two or more. The terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, an integral connection, a mechanical connection, an electrical connection, a communication connection, a direct connection, an indirect connection through an intermediate medium, and can be the internal connection of two elements or the interaction relationship between two elements. The term "and / or" includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to the specific circumstances.

[0035] In order to illustrate the technical solution of the present invention, a specific embodiment is provided below, in which only the parts related to the embodiment of the present invention are shown.

[0036] Example:

[0037] like Figure 3 As shown, the utility model provides a MOSFET power device with high-precision temperature measurement, including: an epitaxial wafer 1, and a MOSFET component 2 and a temperature detection component 3 arranged on the epitaxial wafer 1; the temperature detection component 3 includes n PN junction diode modules 31, a cathode connector 35 and an anode connector 34; the n PN junction diode modules 31 are connected in series, and the anode connector 34 and the cathode connector 35 are respectively arranged at both ends of the n PN junction diode modules 31 after the series connection; the anode connector 34 is connected to the anode of the adjacent PN junction diode module 31, and the cathode connector 35 is connected to the cathode of the adjacent PN junction diode module 31.

[0038] Specifically, if Figure 3 As shown, the epitaxial wafer 1 includes a substrate 11 and an epitaxial layer 12. The epitaxial layer 12 is located on the substrate 11. The substrate 11 is an N-type silicon substrate, the epitaxial layer 12 is an N-type epitaxial layer, and the ions injected into the epitaxial layer 12 are N-type ions. The MOSFET component 2 and the temperature detection component 3 are both arranged on the epitaxial wafer 1. The drain of the MOSFET component 2 is connected to the anode connector 34 of the temperature detection component 3 through the package frame lead, so that the two are at the same potential, thereby realizing temperature detection without the need for an external circuit to supply a high potential. It should be noted that the temperature sensing component is generally placed at the center of the MOSFET component 2, such as Figure 4 shown.

[0039] In the temperature detection component 3, n PN junction diode modules 31 are arranged in series between the cathode connector 35 and the anode connector 34. The anode connector 34 is connected to the anode of the adjacent PN junction diode module 31, and the cathode connector 35 is connected to the cathode of the adjacent PN junction diode module 31, so as to form a temperature detection component 3 that can be used to detect temperature. It should be noted that at least two PN junction diode modules 31 are arranged in this embodiment. Specifically, in this embodiment, three PN junction diode modules 31 are used as an example, such as Figure 3 , Figure 6 shown.

[0040] As we all know, for integrated silicon diodes, the forward voltage drops by about 2mV for every 1°C increase in temperature. The formula for the change of the diode forward voltage drop Vf with the junction temperature Tj is: Vf = -A*Tj+B. The coefficient A of a PN junction diode is small, that is, the change of Vf with the junction temperature Tj is small. When the comparator compares the temperature detection sensor diode Vf with the reference voltage Vref at a junction temperature of 150°C, if the diode forward voltage drop Vf is slightly affected by the device manufacturing process, then the error of the junction temperature Tj read by the temperature detection sensor diode will be very large. In order to improve the accuracy of the temperature detection sensor diode, the coefficient A needs to be increased.

[0041] Figure 5 FIG. 1 shows a graph showing the relationship between the forward conduction voltage drop Vf and the junction temperature Tj of one PN junction diode module 31 and three PN junction diode modules 31 connected in series. Figure 5 It can be seen that the sensitivity of one PN junction diode is 1.6mV / ℃, and the sensitivity of three PN junction diodes in series is 4.8mV / ℃. Therefore, multiple PN junctions in series amplify their electrical signals and improve the sensitivity of the temperature sensor.

[0042] The utility model is provided with n PN junction diode modules 31 connected in series, which can achieve the purpose of amplifying the electrical signal, can improve the detection sensitivity of the temperature detection component 3 in the MOSFET power device, and realize high-precision temperature measurement.

[0043] As an optional embodiment, each PN junction diode module 31 includes a first doped region 311, a second doped region 312, a dielectric layer 313, a cathode contact hole 314 and an anode contact hole 315; the first doped region 311 is located on the epitaxial wafer 1, and the dielectric layer 313 is located on the first doped region 311; the second doped region 312 is located in a designated area of ​​the first doped region 311 and is in contact with the dielectric layer 313; the anode contact hole 315 passes through the dielectric layer 313 and is in contact with the first doped region 311; the cathode contact hole 314 passes through the dielectric layer 313, is arranged corresponding to the designated area, and is in contact with the second doped region 312.

[0044] Specifically, Figure 6 As shown, the first doped region 311 is located on the upper surface of the epitaxial layer 12 and is in contact with the epitaxial layer 12. The first doped region 311 is a P-type region, and the junction depth of the first doped region 311 is 0.6μm to 1.5μm. The dielectric layer 313 is located on the upper surface of the first doped region 311 and is in contact with the first doped region 311. The dielectric material of the dielectric layer 313 is nitride or oxide, and the thickness of the dielectric layer 313 is 0.4μm to 1μm. The dielectric layer 313 is an ILD (InterLayerDielectric) dielectric layer. The ILD dielectric layer 313 refers to a dielectric material formed between the transistor and the first layer of metal, which is used to form electrical isolation. The ILD dielectric layer 313 can effectively reduce the parasitic capacitance between the metal and the substrate 11, and improve the parasitic field effect transistor formed by the metal crossing different regions. The second doping region 312 is located in a designated area of ​​the first doping region 311, and the top of the second doping region 312 is in the same plane as the top of the second doping region 312, and the top of the second doping region 312 is in contact with the dielectric layer 313. The second doping region 312 is an N-type region, and the depth of the N-type region is 0.15μm to 0.3μm. The concentration of the ions injected is higher than the concentration of the ions injected in the epitaxial layer 12, forming an N+ region for reducing the contact resistance of the cathode in the temperature detection component 3. The cathode contact hole 314 passes through the dielectric layer 313, is arranged corresponding to the second doping region 312, and contacts the second doping region 312. The anode contact hole 315 passes through the dielectric layer 313, and extends into the first doping region 311, and contacts the first doping region 311.

[0045] In this embodiment, if Figure 6 As shown, the depth of the anode contact hole 315 is greater than the sum of the thickness of the dielectric layer 313 and the thickness of the second doping region 312, and is less than the sum of the thickness of the dielectric layer 313 and the thickness of the first doping region 311. That is, the depth of the anode contact hole 315 is greater than the junction depth of the second doping region 312 (N+ region), and is less than the junction depth of the first doping region 311 (P-type region). The depth of the cathode contact hole 314 is less than the sum of the thickness of the dielectric layer 313 and the thickness of the second doping region 312, and is not less than the thickness of the dielectric layer 313. That is, the depth of the cathode contact hole 314 is less than the junction depth of the second doping region 312 (N+ region), and is not less than the thickness of the dielectric layer 313. In this embodiment, in addition to limiting the depths of the anode contact hole 315 and the cathode contact hole 314, the widths of the anode contact hole 315 and the cathode contact hole 314 are also limited. The width of the anode contact hole 315 is in the range of 0.3 μm to 0.8 μm, and the width of the cathode contact hole 314 is in the range of 0.3 μm to 3 μm.

[0046] The anode contact holes 315 and cathode contact holes 314 of two adjacent PN junction diodes are connected via the electrode connection area 32. The electrode connection area 32 includes a metal contact electrode 321 and a metal electrode layer 322; the metal contact electrode 321 is located in the anode contact hole 315 and the cathode contact hole 314, and the metal electrode layer 322 is located above the dielectric layer 313 and is arranged at positions corresponding to the anode contact hole 315 and the cathode contact hole 314.

[0047] Specifically, the anode contact hole 315 and the cathode contact hole 314 of two adjacent PN junction diode modules 31 are electrically connected, specifically through the electrode connection area 32, so that the two adjacent PN junction diode modules 31 are accurately connected, providing a basis for the subsequent accurate detection of the temperature detection component 3.

[0048] The electrode connection area 32 includes a metal contact electrode 321 and a metal electrode layer 322. The metal contact electrode 321 is disposed in the anode contact hole 315 and the cathode contact hole 314. The metal electrode layer 322 is located above the dielectric layer 313 and is etched at a corresponding position to form metal electrode layers 322 that are electrically isolated from each other. It should be noted that the metal contact electrode 321 is metal tungsten and the metal electrode layer 322 is aluminum copper.

[0049] The anode contact hole 315 and the cathode contact hole 314 of two adjacent PN junction diode modules 31 are connected through the metal electrode layer 322 disposed above the metal contact electrode 321, the cathode connector 35 is connected to the cathode contact hole 314 on the adjacent PN junction diode module 31 through the metal electrode layer 322 located above it, and the anode connector 34 is also connected to the anode contact hole 315 on the adjacent PN junction diode module 31 through the metal electrode layer 322 located above it. It should be noted that the anode connector 34 can be a metal component connected to the electrode connection area 32 on the cathode in the adjacent PN junction diode module 31, or it can be the electrode connection area 32 on the cathode in the adjacent PN junction diode module 31 itself; the anode connector 34 can be a metal component connected to the electrode connection area 32 on the anode in the adjacent PN junction diode module 31, or it can be the electrode connection area 32 on the anode in the adjacent PN junction diode module 31 itself. Regardless of whether the anode connector 34 and the cathode connector 35 are a separate component or the electrode connection area 32 itself, the anode connector 34, n PN junction diode modules 31 connected in series and the cathode connector 35 will form a temperature detection component 3 with a cathode and an anode, which is convenient for subsequent connection with the MOSFET component 2.

[0050] In this embodiment, the anode connector 34, n PN junction diode modules 31 and the cathode connector 35 are connected in sequence, and the drain of the MOSFET component 2 is connected to the anode connector 34 of the temperature sensor, so that the MOSFET component 2 and the temperature detection component 3 can be made equal in potential, and temperature detection without the need for an external circuit to supply a high potential is achieved. In addition, n PN junction diode modules 31 connected in series are provided in the temperature detection component 3, which can achieve the purpose of amplifying the electrical signal, improve the sensitivity of the temperature detection component 3, and improve the accuracy of the temperature detection component 3.

[0051] As an optional implementation, each PN junction diode module 31 further includes: a third doping region 323; the third doping region 323 is located at the bottom of the anode contact hole 315, such as Figure 6 As shown; the implanted ions in the third doping region 323 are of the same type as the implanted ions in the first doping region 311 , and the concentration of the implanted ions in the third doping region 323 is greater than the concentration of the implanted ions in the first doping region 311 .

[0052] Specifically, the concentration of the injected ions in the third doping region 323 is greater than the concentration of the injected ions in the first doping region 311, which can reduce the contact resistance of the anode in the temperature detection component 3. Since the ions injected into the third doping region 323 are the same as those injected into the first doping region 311, both are P-type ions, and the concentration of the injected ions is greater than the concentration of the injected ions in the first doping region 311, the third doping region 323 is represented as a P+ region. It should be noted that the injection dose of the third doping region 323 is lower than the injection dose of the second doping region 312 to avoid the inversion formation of a P+ region in the second doping region 312.

[0053] As an optional implementation, Figure 6 As shown, each PN junction diode module 31 further includes: an isolation region 33, which is located in the epitaxial wafer 1 and is located on a side of the cathode contact hole 314 away from the anode contact hole 315. Specifically, the PN junction diode module 31 also includes an isolation region 33, which is located next to the cathode contact hole 314 and away from the anode contact hole 315. It is used to electrically isolate two adjacent PN junction diode modules 31. In addition to the isolation region 33 provided in each PN junction diode module 31, an isolation region 33 is also provided in the area next to the anode contact hole 315 of the last PN junction diode module 31 connected to the anode connector 34, which is used to electrically isolate the MOSFET component 2 from the temperature detection component 3.

[0054] The isolation region 33 includes an isolation groove 331, an outer dielectric layer 332 and an inner dielectric layer 333. The outer dielectric layer 332 is located on the bottom and sidewalls of the isolation groove 331, and the inner dielectric layer 333 is located in the space formed by the outer dielectric layer 332. Figure 6As shown, the dielectric material of the outer dielectric layer 332 is oxide, and the dielectric material of the inner dielectric layer 333 is polysilicon. The depth of the isolation trench 331 ranges from 1 μm to 2 μm, and the width ranges from 0.3 μm to 1.5 μm.

[0055] As an optional implementation, Figure 6 As shown, the power device further includes: a back metal layer 13, and the back metal layer 13 is located under the epitaxial wafer 1. The back metal layer 13 is a drain metal layer of the MOSFET component 2.

[0056] In this embodiment, the specific structure of the MOSFET component 2 in the MOSFET power device is not limited, and any MOSFET component 2 that can integrate the temperature detection component 3 belongs to the scope of the MOSFET component 2 of the embodiment of the present invention. Figure 7 The trench MOSFET shown illustrates the structure of the MOSFET component 2 in more detail.

[0057] Trench MOSFET includes a cell structure 21, a terminal region 22 located on one side of the cell structure 21, and a source metal layer 23 located on the cell structure 21. The cell structure 21 includes at least two body doping regions, at least two gate regions 213, a contact region 24, and a body electrode region 214 and a body dielectric layer 218 located in each body doping region. In the cell structure 21, the gate region 213 and the body doping region are alternately arranged. Figure 7 As shown, the left side of the gate region 213 is a body doping region, and the right side is also a body doping region. The right side of the body doping region is a gate region 213. They are alternately arranged in this way, and the contact region 24 is located on the right side of the rightmost gate region 213.

[0058] The bulk dielectric layer 218 is located above the gate region, the bulk doping region and the terminal region 22, and below the source metal layer 23. It should be noted that the bulk dielectric layer 218 in the MOSFET component 2 can be the same dielectric layer 313 as the dielectric layer 313 of the temperature detection component 3, or can be made by the same process.

[0059] Each body doping region includes a first body doping region 211 and a second body doping region 212. Figure 3 As shown, the first body doping region 211 is located in the epitaxial layer 12 and is in contact with the body dielectric layer 218. The second body doping region 212 is located in the first body doping region 211 and is in contact with the body dielectric layer 218. The first body doping region 211 is a P-type region, and the second body doping region 212 is an N+ region.

[0060] In the process of manufacturing the MOSFET component 2, the entire P-type region is formed on the epitaxial layer 12 by etching, doping and other processes, indicating that the first body doping region 211 and the first doping region 311 of the temperature detection component 3 can be manufactured as the same P-type region. Through other corresponding processes, the manufacturing process of the terminal region 22 and the manufacturing process of the isolation region 33 of the temperature detection component 3, the first body doping region 211 and the first doping region 311 of the temperature detection component 3 are formed to improve the manufacturing efficiency, reduce the manufacturing cost, and make the manufacturing process of the MOSFET component 2 compatible with the manufacturing process of the temperature detection component 3. Of course, the first body doping region 211 and the first doping region 311 can be manufactured separately, that is, the first body doping region 211 and the first doping region 311 are formed by partitioning. The specific manufacturing process can be set according to actual needs.

[0061] For the body electrode region 214 in each body doping region, as Figure 7 As shown, the body electrode region 214 passes through the body dielectric layer 218 and the second body doping region 212 of the body doping region, and contacts the first body doping region 211 of the body doping region. The body electrode region 214 in each body doping region includes a body contact hole 215, a body contact electrode 216 and a third body doping region 217. In the body electrode region 214 in each body doping region, the third body doping region 217 is located at the bottom of the body contact hole 215, that is, the third body doping region 217 is located in the first body doping region 211. The third body doping region 217 is a P+ region. The body contact electrode 216 is located in the body contact hole 215. The top of the body electrode region 214 in each body doping region is also in contact with the source metal layer 23.

[0062] like Figure 7 As shown, the contact region 24 is located on the right side of the rightmost gate region 213. The top of the contact region 24 contacts the source metal layer 23, and the contact region 24 passes downward through the body dielectric layer 218 and extends into the first body doping region 211. The contact region is actually a contact hole, the bottom of which is filled with ions of the same type and concentration as those in the third body doping region 217 of the body doping region, and the top of the bottom is filled with the same contact electrode as that in the body contact hole 215 of the body doping region. The difference between the contact region 24 and the body doping region is that the second body doping region 212 is not provided under the body dielectric layer 218. The function of the contact region 24 in this embodiment is to connect with the source metal layer 23 on its top to form a circuit and flow.

[0063] Each gate region 213 includes a gate trench 2131 , an inner gate dielectric layer 2132 and an outer gate dielectric layer 2133 . The outer gate dielectric layer 2133 is located on the bottom and sidewalls of the gate trench 2131 , and the inner gate dielectric layer 2132 is located in a space formed by the outer gate dielectric layer 2133 .

[0064] The terminal area 22 is consistent with the isolation area 33 of the temperature detection component 3, and the specific structure is not described again. Of course, the width and depth of the terminal area 22 can also be set according to actual needs. In this embodiment, the terminal area can not only play an isolation role but also achieve a voltage resistance role. Finally, the drain of the Trench MOSFET is connected to the anode connector of the temperature detection component through the package frame lead to make the two have the same potential, which can improve the use efficiency of the MOSFET power device. At the same time, the temperature detection component can also detect the junction temperature of the MOSFET power device in real time and accurately. The MOSFET power device has an efficient and accurate temperature detection function.

[0065] It should be noted that this embodiment does not limit the specific manufacturing method of the MOSFET component and the temperature detection component. The manufacturing method of the MOSFET component that can integrate the temperature detection component falls within the scope of the MOSFET component and temperature detection component manufacturing method of the embodiment of the present invention.

[0066] The embodiment is only a special case and does not indicate that the present invention is implemented in such a way.

[0067] The above description is only the preferred embodiment of the present invention. Those skilled in the art will appreciate that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the guidance of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application belong to the protection scope of the present invention.

Claims

1. A MOSFET power device with high-precision temperature measurement, characterized in that: include: An epitaxial wafer (1), and a MOSFET component (2) and a temperature detection component (3) arranged on the epitaxial wafer (1); The temperature detection component (3) comprises n PN junction diode modules (31), a cathode connector (35) and an anode connector (34); the n PN junction diode modules (31) are connected in series, and the anode connector (34) and the cathode connector (35) are respectively arranged at both ends of the n PN junction diode modules (31) connected in series; The anode connecting piece (34) is connected to the anode of the adjacent PN junction diode module (31), and the cathode connecting piece (35) is connected to the cathode of the adjacent PN junction diode module (31).

2. A MOSFET power device with high-precision temperature measurement according to claim 1, characterized in that: Each of the PN junction diode modules (31) comprises a first doping region (311), a second doping region (312), a dielectric layer (313), a cathode contact hole (314) and an anode contact hole (315); the first doping region (311) is located on the epitaxial wafer (1), and the dielectric layer (313) is located on the first doping region (311); the second doping region (312) is located in a designated area of ​​the first doping region (311) and is in contact with the dielectric layer (313); the anode contact hole (315) passes through the dielectric layer (313) and is in contact with the first doping region (311); the cathode contact hole (314) passes through the dielectric layer (313), is arranged corresponding to the designated area, and is in contact with the second doping region (312); The anode contact holes (315) and cathode contact holes (314) of two adjacent PN junction diode modules (31) are connected via an electrode connection area (32).

3. A MOSFET power device with high-precision temperature measurement according to claim 2, characterized in that: The electrode connection area (32) comprises a metal contact electrode (321) and a metal electrode layer (322); the metal contact electrode (321) is located in the anode contact hole (315) and the cathode contact hole (314), and the metal electrode layer (322) is located above the dielectric layer (313) and is arranged at a position corresponding to the anode contact hole (315) and the cathode contact hole (314).

4. A MOSFET power device with high-precision temperature measurement according to claim 2, characterized in that: The depth of the anode contact hole (315) is greater than the sum of the thickness of the dielectric layer (313) and the thickness of the second doping region (312), and less than the sum of the thickness of the dielectric layer (313) and the thickness of the first doping region (311); The depth of the cathode contact hole (314) is less than the sum of the thickness of the dielectric layer (313) and the thickness of the second doping region (312), and is not less than the thickness of the dielectric layer (313).

5. A MOSFET power device with high-precision temperature measurement according to claim 2, characterized in that: Each of the PN junction diode modules (31) further comprises: a third doping region (323); the third doping region (323) is located at the bottom of the anode contact hole (315); the implanted ions of the third doping region (323) are of the same type as the implanted ions of the first doping region (311), and the concentration of the implanted ions of the third doping region (323) is greater than the concentration of the implanted ions of the first doping region (311).

6. A MOSFET power device with high-precision temperature measurement according to claim 2, characterized in that: Each of the PN junction diode modules (31) further comprises: an isolation region (33), wherein the isolation region (33) is located in the epitaxial wafer (1) and is located on a side of the cathode contact hole (314) away from the anode contact hole (315).

7. A MOSFET power device with high-precision temperature measurement according to claim 6, characterized in that: The isolation region (33) comprises an isolation groove (331), an outer dielectric layer (332) and an inner dielectric layer (333), wherein the outer dielectric layer (332) is located at the bottom and side walls of the isolation groove (331), and the inner dielectric layer (333) is located in a space formed by the outer dielectric layer (332).

8. A MOSFET power device with high-precision temperature measurement according to claim 7, characterized in that: The isolation groove (331) has a depth ranging from 1 μm to 2 μm and a width ranging from 0.3 μm to 1.5 μm.

9. A MOSFET power device with high-precision temperature measurement according to claim 1, characterized in that: The power device further comprises: a back metal layer (13), wherein the back metal layer (13) is located below the epitaxial wafer (1).

10. A MOSFET power device with high-precision temperature measurement according to any one of claims 1 to 9, characterized in that: In the n PN junction diode modules (31), n≥2.

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