Semi-transparent BIPV assembly

Abstract

The semi-transparent BIPV assembly comprises a perovskite top cell, a glass backboard and a plurality of silicon substrate cells, the perovskite top cell, the silicon substrate cells and the glass backboard are arranged in sequence from top to bottom, and adhesive film layers are arranged between the silicon substrate cells and the perovskite top cell and between the silicon substrate cells and the glass backboard; gaps exist between the adjacent silicon-based batteries, the adjacent silicon-based batteries are connected through copper alloy wires, and the outer sides of the silicon-based batteries are connected with the junction box through the copper alloy wires so as to realize electric energy output. The crystalline silicon semi-transparent BIPV assembly has the advantages of being compact in structure, convenient to disassemble and assemble, high in light utilization rate, large in effective power generation area, low in cost and the like, and solves the problems that an existing conventional crystalline silicon semi-transparent BIPV assembly is small in effective power generation area and low in assembly efficiency.

Description

Technical Field

[0001] The utility model belongs to the technical field of building integrated photovoltaic (BIPV) components, and specifically relates to a semi-transparent BIPV component. Background Art

[0002] Conventional crystalline silicon cells have poor light transmittance, so the application scenarios of BIPV modules made of them are often limited. In order to improve the light transmittance of crystalline silicon cell BIPV modules, the crystalline silicon cells in the BIPV modules are usually arranged at intervals to form semi-transparent crystalline silicon cell modules. This design allows sunlight to pass through the transparent glass substrate without silicon-based cells to meet the lighting requirements of the building. However, this design reduces the light utilization rate of the module, reduces the effective power generation area of ​​the module, and increases the cost per watt of the module. Utility Model Content

[0003] The technical problem to be solved by the utility model is to solve the problems of small effective power generation area and low component efficiency of existing conventional crystalline silicon semi-transparent BIPV components, and to provide a semi-transparent BIPV component with compact structure, convenient disassembly and assembly, high light utilization rate, large effective power generation area and low cost.

[0004] In order to solve the above technical problems, the utility model adopts the following technical solutions:

[0005] A semi-transparent BIPV component comprises a perovskite top cell, a glass backplane and a plurality of silicon-based cells, wherein the perovskite top cell, the silicon-based cell and the glass backplane are arranged in sequence from top to bottom, and an adhesive film layer is provided between the silicon-based cell and the perovskite top cell, and between the silicon-based cell and the glass backplane; there are gaps between adjacent silicon-based cells, which are connected by copper alloy wires, and the outer sides of the silicon-based cells are connected to a junction box by the copper alloy wires to achieve power output.

[0006] As a further improvement of the present invention, the silicon-based battery adopts a double-sided HJT battery, the front pattern of the silicon-based battery adopts a 0BB design, and the electrodes are led out from both sides of the battery.

[0007] As a further improvement of the present invention, the structure of the silicon substrate battery is, from top to bottom, copper alloy wire, front fine grid, TCO conductive glass, p-type amorphous silicon film, intrinsic amorphous silicon film, N-type silicon substrate, intrinsic amorphous silicon film, n-type amorphous silicon film and TCO conductive glass.

[0008] As a further improvement of the present invention, the structure of the perovskite top cell includes, from top to bottom, conductive glass, a hole transport layer (HTL), a perovskite cell layer, an electron transport layer (ETL) and a metal electrode.

[0009] As a further improvement of the present invention, the conductive glass is made of tempered glass or semi-tempered glass, and the thickness of the conductive glass is equal to the thickness of the glass back plate, both of which are 2.0 to 3.2 mm.

[0010] As a further improvement of the present invention, the electron transport layer (ETL) is C 60 or SnO 2 Or Li F or MgFx.

[0011] As a further improvement of the present invention, the perovskite battery layer adopts FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 Prepared.

[0012] As a further improvement of the present invention, the hole transport layer (HTL) is prepared by using NiO or VNPB or PEDOT:PSS.

[0013] As a further improvement of the present invention, the adhesive film layer is prepared by using one or more materials selected from EVA, POE and PVB.

[0014] As a further improvement of the present invention, the perovskite top cell, the adhesive film layer, the silicon substrate cell and the glass back panel are laminated and formed as a whole, and the copper alloy wire is laminated and connected to the silicon substrate cell.

[0015] Compared with the prior art, the advantages of the utility model are:

[0016] The semi-transparent BIPV component of the present invention designs a perovskite cell layer above the crystalline silicon cell of the semi-transparent component, which effectively improves the efficiency of the component while ensuring the transmittance of the component. At the same time, taking into account the problem that the failure of the perovskite cell layer greatly reduces the efficiency of the component, the present invention separates the perovskite top cell and the crystalline silicon cell, and the junction boxes of the crystalline silicon bottom cell are arranged on both sides of the component. At the same time, the crystalline silicon bottom cell uses a crystalline silicon cell with a high bifaciality. After the perovskite cell layer fails, the component can be turned over to prevent excessive power loss, and the problem of blocking the light-receiving surface by the junction box and the lead is also avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the structural principle of the semi-transparent BIPV component in a specific embodiment of the utility model.

[0018] Legend: 1. Perovskite top cell; 2. Adhesive film layer; 3. Silicon base cell; 4. Copper alloy wire; 5. Junction box; 6. Glass back panel. DETAILED DESCRIPTION

[0019] The present invention is further described below in conjunction with the accompanying drawings and specific preferred embodiments, but the protection scope of the present invention is not limited thereby.

[0020] In the description of the present invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation to the present invention.

[0021] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0022] Example

[0023] like Figure 1 As shown, the semi-transparent BIPV module of the present invention comprises a perovskite top cell 1, a glass back plate 6 and a plurality of silicon substrate cells 3; the perovskite top cell 1, the silicon substrate cell 3 and the glass back plate 6 are arranged in sequence from top to bottom; a film layer 2 is provided between the silicon substrate cell 3 and the perovskite top cell 1, and between the silicon substrate cell 3 and the glass back plate 6. There is a gap between adjacent silicon substrate cells 3, and they are connected by copper alloy wires 4, and the outer side of the silicon substrate cell 3 is connected to the junction box 5 by the copper alloy wires 4 to achieve power output.

[0024] In this embodiment, the BIPV module prepared using crystalline silicon cells and perovskite cells has semi-transparent performance and has higher power generation efficiency than traditional semi-transparent crystalline silicon modules. Specifically, the perovskite cells are stacked with crystalline silicon cells arranged at intervals, which effectively improves the power of the module while retaining the light transmittance of the module, and has more application scenarios in the BIPV field. The crystalline silicon bottom cell of this embodiment uses high-efficiency crystalline silicon cells with high bifaciality. When the perovskite top cell fails, the module can be flipped over to turn the crystalline silicon cell into a top cell to ensure a certain output capacity of the module. The module junction box is designed on both sides to prevent the junction box and leads from blocking the light-receiving surface of the module after flipping.

[0025] In this embodiment, the bottom cell is a high-efficiency crystalline silicon cell with a high bifacial rate, which is separated from the top cell by a film layer, and the crystalline silicon cell layer is designed as a spacing, and the size of the gap between adjacent silicon substrate cells 3 can be adjusted according to actual application requirements. Specifically, the silicon substrate cell 3 adopts an HJT cell with excellent bifacial performance, and the front pattern of the silicon substrate cell 3 adopts an 0BB design, and the electrodes are led out from both sides of the cell.

[0026] In this embodiment, the structure of the silicon substrate battery 3 from top to bottom is copper alloy wire 4, front fine grid, TCO conductive glass, p-type amorphous silicon film, intrinsic amorphous silicon film, N-type silicon substrate, intrinsic amorphous silicon film, n-type amorphous silicon film and TCO conductive glass.

[0027] The silicon-based battery 3 adopts the 0BB design containing copper alloy wire, which has a stronger tolerance for removing edge overflow during the component production process. Laser heating and edge cleaning can be used to facilitate the setting of a junction box on the side. However, using conventional solder strips for side junction box design will face the problem of melting the solder during heating and edge cleaning.

[0028] In this embodiment, the structure of the perovskite top cell 1 includes conductive glass, a hole transport layer (HTL), a perovskite cell layer, an electron transport layer (ETL) and a metal electrode from top to bottom.

[0029] Furthermore, the battery conductive glass is used as the front panel of the component, and the glass substrate should use tempered glass or semi-tempered glass with a thickness of 2.0 to 3.2 mm. In addition, the thickness of the conductive glass substrate should be consistent with the thickness of the glass back panel to ensure uniform force, thereby meeting the strength requirements of the BIPV component and improving the safety of BIPV component use.

[0030] In this embodiment, the preparation material of the electron transport layer (ETL) can be selected from but not limited to C 60 or SnO 2 Or Li F or MgFx. The preparation material of the perovskite battery layer can be selected but not limited to FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 The electrode of the perovskite cell layer can be led out from the side after laser edge cleaning. The preparation material of the hole transport layer (HTL) can be selected from but not limited to NiO or VNPB or PEDOT:PSS.

[0031] In this embodiment, the adhesive film layer 2 can be made of one or more materials selected from but not limited to EVA, POE, and PVB. Preferably, the adhesive film layer 2 is made of PVB material to reduce the impact of edge overflow on the leads on both sides, thereby reducing the difficulty of edge cleaning.

[0032] In this embodiment, the perovskite top cell 1, the adhesive film layer 2, the silicon base cell 3, the adhesive film layer 2 and the glass back panel 6 are integrally formed by lamination, and the copper alloy wire 4 is connected to the silicon base cell 3 by lamination.

[0033] The component structure design of this embodiment takes into account the requirements of light transmission and high power. At the same time, considering the difference in lifespan between perovskite cells and crystalline silicon cells, high bifaciality silicon-based cells are selected to facilitate flipping the components when the perovskite cells fail, allowing the crystalline silicon cells to dominate power generation to ensure that the components maintain a certain power output. Through the side design of the junction box, when the perovskite fails, the components can be flipped to allow the crystalline silicon cells to dominate power generation, and the output power of the components will not decay too much, thereby increasing the service life of the perovskite-crystalline silicon stacked components. Compared with the back design of the junction box, the side design can prevent the hot spot effect and efficiency loss caused by the junction box and leads blocking the components after flipping the components.

[0034] Although the utility model is disclosed as above with preferred embodiments, it is not intended to limit the utility model. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the utility model without departing from the spirit and technical solution of the utility model, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the utility model without departing from the content of the technical solution of the utility model still falls within the scope of protection of the technical solution of the utility model.

Claims

1. A semi-transparent BIPV component, characterized in that: include: A perovskite top cell (1), a glass back plate (6) and a plurality of silicon substrate cells (3), wherein the perovskite top cell (1), the silicon substrate cell (3) and the glass back plate (6) are arranged in sequence from top to bottom, and an adhesive film layer (2) is provided between the silicon substrate cell (3) and the perovskite top cell (1), and between the silicon substrate cell (3) and the glass back plate (6); there is a gap between adjacent silicon substrate cells (3), and they are connected by a copper alloy wire (4), and the outer side of the silicon substrate cell (3) is connected to a junction box (5) by the copper alloy wire (4) to achieve electrical energy output.

2. The semi-transparent BIPV assembly according to claim 1, characterized in that: The silicon-based battery (3) adopts a double-sided HJT battery, the front pattern of the silicon-based battery (3) adopts an 0BB design, and electrodes are led out from both sides of the battery.

3. The semi-transparent BIPV assembly according to claim 2, characterized in that: The structure of the silicon substrate battery (3) from top to bottom comprises a copper alloy wire (4), a front fine grid, TCO conductive glass, a p-type amorphous silicon film, an intrinsic amorphous silicon film, an N-type silicon substrate, an intrinsic amorphous silicon film, an n-type amorphous silicon film and TCO conductive glass.

4. The semi-transparent BIPV assembly according to claim 3, characterized in that: The structure of the perovskite top cell (1) comprises, from top to bottom, conductive glass, a hole transport layer (HTL), a perovskite cell layer, an electron transport layer (ETL) and a metal electrode.

5. The semi-transparent BIPV assembly according to claim 4, characterized in that: The conductive glass is made of tempered glass or semi-tempered glass, and the thickness of the conductive glass is equal to the thickness of the glass back plate (6), both of which are 2.0-3.2 mm.

6. The semi-transparent BIPV assembly according to claim 4, characterized in that: The electron transport layer (ETL) is made of C 60 Or SnO2 or LiF or MgFx.

7. The semi-transparent BIPV assembly according to claim 4, characterized in that: The perovskite battery layer adopts FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3 was prepared.

8. The semi-transparent BIPV assembly according to claim 4, characterized in that: The hole transport layer (HTL) is prepared by using NiO or VNPB or PEDOT:PSS.

9. The semi-transmissive BIPV assembly according to any one of claims 1 to 8, characterized in that: The adhesive film layer (2) is prepared using one or more materials selected from the group consisting of EVA, POE, and PVB.

10. The semi-transmissive BIPV assembly according to any one of claims 1 to 8, characterized in that: The perovskite top cell (1), the adhesive film layer (2), the silicon base cell (3) and the glass back panel (6) are laminated to form an integral whole, and the copper alloy wire (4) is laminated and connected to the silicon base cell (3).

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