Low-stress high-transmittance ITO (indium tin oxide) film layer structure

Abstract

The utility model discloses a low stress high transmission ITO film layer structure, which is a layered structure film, the structure film comprises a Pl substrate layer, an ITO layer I and an ITO layer II, the ITO layer I and the ITO layer II are connected and arranged on the Pl substrate layer, and a Ti layer is arranged between the ITO layer I and the ITO layer II. Compared with the prior art, the low-stress high-transmittance ITO film layer structure provided by the utility model has the advantages that the high transmittance of a visible light region can be ensured, the internal stress of the whole film layer is reduced, and the bending times are increased.

Description

Technical Field

[0001] The utility model relates to the technical field of ITO films, in particular to an ITO film layer structure with low stress and high transmittance. Background Art

[0002] ITO (Indium Tin Oxide) film is a widely used high-transmittance, low-resistance film and a key material in the display industry. One of the key parameters of flexible screens in the display industry is the number of bends. When the ITO film is deposited on a flexible substrate, the stress between the upper and lower film layers does not match, and it is very easy for the film layer to break after multiple bends, causing the drive circuit to fail and causing product display abnormalities.

[0003] When preparing ITO film on PI or PET flexible substrate, RF magnetron sputtering is often used to ensure the quality of film deposition. The parameters in actual application are as follows:

[0004] With the process parameters of power 50W, argon flow rate 40sccm, oxygen flow rate 3.5sccm, target-substrate distance 130mm, temperature 100-120℃, film forming time 50min, etc., a single-layer ITO high-transmittance film of about 120nm can be prepared, with a transmittance of more than 85% in the visible light region and a surface resistance of 100-150Ω / □. The film breaks after 300 inner bends or 200 outer bends. Utility Model Content

[0005] 1. Problems to be solved

[0006] The technical problem to be solved by the utility model is that the ITO (indium tin oxide) film in the prior art has large internal stress in the film layer when used, is deposited on a flexible substrate, and is prone to peeling after multiple bending, which affects the service life of the film layer. In addition, some film structures lead to a slow radio frequency deposition rate, resulting in a long time-consuming film preparation process.

[0007] (II) Technical solution

[0008] In order to solve the above technical problems, the technical solution provided by the utility model is: a low-stress and high-transmittance ITO film layer structure, which is a layered structural film, wherein the structural film includes a P1 base layer and an ITO layer 1 and an ITO layer 2 connected to the P1 base layer, and a Ti layer is provided between the ITO layer 1 and the ITO layer 2.

[0009] As an improvement, the thickness of the ITO layer is 10 nm.

[0010] As an improvement, the thickness of the Ti layer is 15 nm.

[0011] As an improvement, the thickness of the second ITO layer is 100 nm.

[0012] (III) Beneficial effects

[0013] The advantages of the utility model compared with the prior art are:

[0014] Aiming at improving the bending performance of the ITO film on the flexible substrate, while ensuring the high transmittance and low resistance of the film, the film performance is improved by combining the P1 substrate layer, ITO layer 1, ITO layer 2 and Ti layer;

[0015] The laminated structure of the present application has been tested to have a transmittance of over 90% in the visible light region, and a surface resistance in the range of 100 to 150 Ω / □, which improves the stress distribution within the film layer. The substrate stress test result drops from 400 MPa to about 220 MPa, which can ensure high transmittance in the visible light region while also reducing the overall stress within the film layer and increasing the number of bending times. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of the utility model.

[0017] As shown in the figure: 1, P1 base layer; 2, ITO layer one; 3, ITO layer two; 4, Ti layer. DETAILED DESCRIPTION

[0018] The specific implementation of the utility model is further described below in conjunction with the accompanying drawings, wherein the same parts are represented by the same reference numerals.

[0019] It should be noted that the words "front", "rear", "left", "right", "up" and "down" used in the following description refer to directions in the drawings, and the words "inside" and "outside" refer to directions toward or away from the geometric center of a specific component, respectively.

[0020] It should be noted that when an element is referred to as being "fixed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used in this article are for illustrative purposes only.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly connected by technicians in the technical field to which the present invention belongs. The terminology used in the specification of the present invention is for the purpose of describing specific embodiments and is not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0022] In order to make the contents of the present invention more clearly understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0023] Please refer to the attached Figure 1 A low stress and high transmittance ITO film layer structure is a layered structural film, the structural film includes a P1 base layer 1 and an ITO layer 1 2 and an ITO layer 2 3 connected to the P1 base layer 1, and a Ti layer 4 is provided between the ITO layer 1 2 and the ITO layer 2 3.

[0024] In one embodiment

[0025] The thickness of the ITO layer 1 is 10 nm, the thickness of the Ti layer is 15 nm, and the thickness of the ITO layer 2 is 100 nm.

[0026] When preparing for use:

[0027] ① Using DC magnetron sputtering, power 20W, argon flow rate 40sccm, oxygen flow rate 0sccm, target substrate distance 110mm, temperature 80℃, and film forming time 5min, an ITO film layer of about 10nm can be prepared; ② Using DC sputtering Ti target, power 50W, argon flow rate 40sccm, oxygen flow rate 5sccm, target substrate distance 110mm, temperature 25℃, and film forming time 5min, a Ti film layer of about 15nm can be prepared; ③ Using RF magnetron sputtering, power 60W, argon flow rate 40sccm, oxygen flow rate 3.5sccm, target substrate distance 110mm, temperature 25℃ and film forming time 25min, an ITO high transmittance film layer of about 100nm can be prepared.

[0028] The test shows that the transmittance in the visible light region is above 90%, and the surface resistance is within the range of 100-150Ω / □. The stress distribution in the film layer is improved, and the substrate stress test result is reduced from 400 MPa to about 220 MPa. After 1000 inner bending or 800 outer bending, there is a slight film fracture.

[0029] Preparation process:

[0030] The magnetron sputtering equipment used is Shenkeyi PVD-500 model, and the PI sample is 50*50mm

[0031] Place the glass substrate in the magnetron sputtering equipment. After reaching the vacuum requirement, pre-sputter the DC sputtering ITO target and the RF sputtering ITO target for 20 minutes respectively. After completion, take out the substrate.

[0032] Clean the surface of the PI sample with deionized water, blow it with clean air for about 30 seconds, and place it in the sample chamber of the magnetron sputtering machine;

[0033] First, use a DC sputtering power of 20W, an argon flow rate of 40sccm, an oxygen flow rate of 0sccm, a target-substrate distance of 110mm, a temperature of 80°C, and a film-forming time of 5min. Then use a DC sputtering Ti target with a power of 50W, an argon flow rate of 40sccm, an oxygen flow rate of 5sccm, a target-substrate distance of 110mm, a temperature of 25°C, and a film-forming time of 5min. A Ti film layer of about 15nm can be prepared. Finally, switch to an RF power supply for sputtering with a power of 60W, an argon flow rate of 40sccm, an oxygen flow rate of 3.5sccm, a target-substrate distance of 110mm, a temperature of 25°C, and a film-forming time of 25min.

[0034] The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

[0035] The standard parts used in the utility model can be purchased from the market, and special-shaped parts can be customized according to the description in the specification and the drawings. The specific connection methods of each part adopt the conventional means such as mature bolts, rivets, welding, etc. in the prior art. The machinery, parts and equipment all adopt the conventional models in the prior art, and the circuit connection adopts the conventional connection method in the prior art, which will not be described in detail here. The content not described in detail in this specification belongs to the prior art known to professional and technical personnel in this field.

[0036] The above description of the utility model and its implementation methods is not restrictive. The drawings show only one implementation method of the utility model, and the actual structure is not limited thereto. In short, if ordinary technicians in this field are inspired by it and design structural methods and embodiments similar to the technical solution without creativity without departing from the purpose of the invention of the utility model, they should all fall within the protection scope of the utility model.

Claims

1. A low stress and high transmittance ITO film structure, which is a layered film, characterized in that: The structural film includes a P1 base layer and an ITO layer 1 and an ITO layer 2 connected to the P1 base layer, a Ti layer is provided between the ITO layer 1 and the ITO layer 2; the ITO layer 1 has a thickness of 10 nm; the Ti layer has a thickness of 15 nm; and the ITO layer 2 has a thickness of 100 nm.

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