High-stability graphite clamping device for polycrystalline silicon processing
By adding multiple flap and limit blocks to the graphite clamping device, designing annular equally spaced flap and inverted cone meter planes, the problem of unstable clamping of existing clamping devices in high temperature or high current environments is solved, and the stability of uniform and stable clamping of the silicon core and silicon rod growth is achieved.
Patent Information
- Application Number
- CN202421312237.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-10
- Publication Date
- 2025-03-11
- Estimated Expiration
- 2034-06-10
AI Technical Summary
The existing graphite clamping device is unstable in high temperature or high current environments, which may cause the silicon core to shift or fall off, affecting the smooth progress of polysilicon processing.
A polycrystalline silicon processed graphite clamping device was designed, and multiple clamping valves and limiting blocks were added. The clamping valves were distributed at an annular equal spacing. The inner side of the clamping block had an inverted cone meter-shaped surface, and the inverted cone meter-shaped surface at the top of the clamping valve was spliced into an inverted cone meter-shaped groove.
By increasing the number of card valves and limit block distribution, uniform and stable clamping of the silicon core is achieved, reducing the risk of shifting or falling off of the silicon rod during growth, and ensuring the stability and smoothness of polysilicon processing.
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Figure CN222594080U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of graphite clamping devices, and more specifically to a high-stability graphite clamping device for processing polysilicon. Background Art
[0002] In the production process of polysilicon, the graphite chuck is used to fix the silicon core on the one hand and connect the electrodes on the other hand to achieve the conduction of current. This conductive function is crucial for the production of polysilicon, which ensures that the current can pass through the silicon core evenly, thereby achieving uniform heating of the silicon material.
[0003] The existing graphite clamping device has a small number of clamping petals, resulting in fewer clamping points for the silicon core, which may lead to unstable clamping. If the force distribution during clamping is uneven, the silicon core clamping will also be unstable, especially in high temperature or high current working environments. This instability may increase safety risks. In addition, as the silicon rod grows, the stability of the connection between its bottom end and the clamping device is also very important. If the connection between the silicon rod and the clamping device is unstable, the silicon rod will shift or fall off during the growth process, affecting the smooth progress of the growth process. Utility Model Content
[0004] The utility model aims to overcome the defects of the prior art and provide a high-stability graphite clamping device for processing polysilicon.
[0005] In order to achieve the above-mentioned purpose, the utility model provides the following technical solutions: a polysilicon processing graphite clamping device, comprising a base, a clamping cap and a plurality of clamping petals, the bottom of the base having an electrode slot, the top of the base having a plurality of radial limit blocks distributed in a ring-shaped and equidistant manner, the outer circumference of the base having an external thread; the clamping cap comprising a top plate and a circumferential plate fixedly connected to the top plate, the top plate having a top through hole, the top through hole having a first frustum-shaped abutting surface, the circumferential plate having an internal thread matching the external thread; the clamping petals comprising a bottom block and a clamping block fixedly connected to the bottom block, the number of the clamping petals being equal to the number of the limit blocks, the bottom block having a limit sliding groove matching the limit block, the inner side of the clamping block having an arc-shaped silicon core abutting surface for clamping a silicon core and an inverted frustum-shaped surface located above the silicon core abutting surface, the outer side of the clamping block having a second abutting surface for abutting the first abutting surface.
[0006] Furthermore, the height of the inverted frustum-shaped surface in the vertical direction is greater than or equal to one third of the height of the clamping petal.
[0007] Thereby, the clamping block can clamp the silicon core more stably.
[0008] Furthermore, the inverted frustum-shaped surfaces at the top ends of the plurality of clips can be spliced into an inverted frustum-shaped groove.
[0009] Therefore, when silicon is deposited, it will also be deposited in the inverted frustum-shaped groove, so that when the silicon rod grows, the bottom end of the silicon rod is more stably connected to the clamping device.
[0010] Furthermore, the number of the card petals is greater than or equal to 8; and there is a gap between two adjacent card petals.
[0011] Furthermore, the base has a connecting hole connecting the electrode slot and the upper surface of the base.
[0012] This ensures that the current is smoothly conducted from the electrode slot to the upper surface of the base, and then to the clamped silicon core, which helps to achieve rapid and uniform heating of the silicon core.
[0013] Furthermore, the electrode slot is in a frustum shape.
[0014] Compared with the prior art, the utility model has the following beneficial effects:
[0015] 1. The graphite clamping device of the present application has more clamping petals, so that the contact surface between the silicon core and the silicon core surrounded by multiple clamping petals is more uniform, and the clamping effect on the silicon core is better. In addition, due to the limitation of the limiting block, the clamping petals are distributed in a ring shape with equal spacing, so that the silicon core is subjected to a more uniform and stable clamping force.
[0016] 2. In the graphite clamping device of the present application, the inverted frustum-shaped surfaces at the top of multiple clamping petals are spliced into a complete inverted frustum-shaped groove, so that when silicon is deposited, it will also be deposited in the inverted frustum-shaped groove, so that when the silicon rod grows, the bottom end of the silicon rod is more stably connected to the clamping device. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 A schematic diagram of the separation of the components of the graphite clamping device from a first perspective;
[0018] Figure 2 A schematic diagram showing the separation of the components of the graphite clamping device from a second perspective;
[0019] Figure 3 It is a schematic diagram of the graphite clamping device from the first perspective;
[0020] Figure 4 It is a schematic diagram of the graphite clamping device from a second viewing angle;
[0021] To make it clear, Figure 3 and Figure 4 The center-to-center graphite clamping device has been cut in half.
[0022] Explanation of the reference numerals: 1 base; 1.1 electrode slot; 1.2 limiting block; 1.3 external thread; 1.4 connecting hole; 2 clamping cap; 2.1 top plate; 2.2 circumferential plate; 2.3 top through hole; 2.4 first abutting surface; 2.5 internal thread; 3 clamping flap; 3.1 bottom block; 3.2 clamping block; 3.3 limiting slide groove; 3.4 silicon core abutting surface; 3.5 inverted frustum-shaped surface; 3.6 second abutting surface. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0024] The utility model provides Figure 1-4 The high-stability graphite clamping device for processing polysilicon shown in the figure comprises a base 1, a clamping cap 2 and a plurality of clamping petals 3, wherein the bottom of the base 1 has an electrode slot 1.1, the top of the base 1 has a plurality of radial limit blocks 1.2 distributed in an annular shape and at equal intervals, and the outer circumference of the base 1 has an external thread 1.3; the clamping cap 2 comprises a top plate 2.1 and a circumferential plate 2.2 fixedly connected to the top plate 2.1, the top plate 2.1 has a top through hole 2.3, the top through hole 2.3 has a first abutting surface 2.4 in the shape of a cone, and the circumferential plate 2.2 has a first abutting surface 2.4 in the shape of a cone, and the first abutting surface 2.4 in the shape of a cone is provided on the top of the base 1. The clamping block 3.2 is fixedly connected to the bottom block 3.1, the number of the clamping petals 3 is equal to the number of the limiting blocks 1.2, the bottom block 3.1 has a limiting groove 3.3 that cooperates with the limiting block 1.2, the inner side of the clamping block 3.2 has an arc-shaped silicon core abutting surface 3.4 for clamping the silicon core and an inverted frustum-shaped surface 3.5 located above the silicon core abutting surface 3.4, and the outer side of the clamping block 3.2 has a second abutting surface 3.6 for abutting the first abutting surface 2.4.
[0025] The height of the inverted frustum-shaped surface 3.5 in the vertical direction is greater than or equal to one third of the height of the card petal 3; the inverted frustum-shaped surfaces 3.5 at the top of multiple card petals 3 can be spliced into an inverted frustum-shaped groove; the number of the card petals 3 is greater than or equal to 8; there is a gap between two adjacent card petals 3; the base 1 has a connecting hole 1.4 connecting the electrode slot 1.1 and the upper surface of the base 1.
[0026] Working principle: The graphite clamping device of the present application has more clamping petals than the traditional chuck, so that the contact surface between the multiple clamping petals surrounding the silicon core is more uniform, and the clamping effect on the silicon core is better. In addition, due to the positioning of the limit block, the clamping petals are distributed in a circular shape with equal spacing, so that the silicon core is subjected to a more uniform and stable clamping force.
[0027] When clamping the silicon core, first pass the silicon core through the top through hole of the clamp cap, and then rotate the clamp cap so that the first abutting surface of the clamp cap interacts with the second abutting surface of the clamp flap, thereby pushing the clamp flap to move toward the center along the limit block, thereby adjusting the clamping force of the clamping block on the silicon core, until the abutting surface of the silicon core on the inner side of the clamping block fits tightly with the outer surface of the silicon core, thereby achieving stable clamping of the silicon core. After the silicon core is clamped, the electrode or other power supply equipment is connected through the electrode slot to uniformly heat the silicon core. Since the inverted frustum-shaped surfaces at the top of multiple clamp flaps can be spliced into a complete inverted frustum-shaped groove, silicon will also be deposited in the inverted frustum-shaped groove during deposition, so that as the silicon rod grows, the bottom end of the silicon rod is more stably connected to the graphite clamping device. This helps prevent the silicon rod from shifting or falling off during the growth process, ensuring the smooth progress of the growth process.
[0028] Although the present invention has been illustrated and described with respect to preferred embodiments, it should be understood by those skilled in the art that various changes and modifications may be made to the present invention without departing from the scope of the present invention as defined by the claims.
Claims
1. A high-stability graphite clamping device for processing polysilicon, characterized in that: It includes a base, a card cap and multiple card petals, the bottom of the base has an electrode slot, the top of the base has multiple radial limit blocks distributed in a ring shape with equal intervals, and the outer circumference of the base has an external thread; the card cap includes a top plate and a circumferential plate fixedly connected to the top plate, the top plate has a top through hole, the top through hole has a first frustum-shaped abutment surface, and the circumferential plate has an internal thread matching the external thread; the card petals include a bottom block and a clamping block fixedly connected to the bottom block, the number of the card petals is equal to the number of the limit blocks, the bottom block has a limit sliding groove matching the limit block, the inner side of the clamping block has an arc-shaped silicon core abutment surface for clamping the silicon core and an inverted frustum-shaped surface located above the silicon core abutment surface, and the outer side of the clamping block has a second abutment surface for abutting the first abutment surface.
2. The high-stability graphite clamping device for processing polysilicon according to claim 1, characterized in that: The height of the inverted frustum-shaped surface in the vertical direction is greater than or equal to one third of the height of the clip.
3. The high-stability graphite clamping device for processing polysilicon according to claim 1, characterized in that: The inverted frustum-shaped surfaces at the top ends of the plurality of clip flaps can be spliced into an inverted frustum-shaped groove.
4. The high-stability graphite clamping device for processing polysilicon according to claim 1, characterized in that: The number of the card petals is greater than or equal to 8; and there is a gap between two adjacent card petals.
5. The high-stability graphite clamping device for processing polysilicon according to claim 1, characterized in that: The base has a connecting hole connecting the electrode slot and the upper surface of the base.
6. The high-stability graphite clamping device for processing polysilicon according to claim 1, characterized in that: The electrode slot is in a frustum shape.
Citation Information
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