Chip structure capable of improving ACF conductive particle capture rate
By designing multiple types of protrusions on the chip electrodes and optimizing their height and spacing, the problem of short circuit risk in the prior art when improving the conductive particle capture rate is solved, and higher conduction performance and lower short circuit risk are achieved.
Patent Information
- Application Number
- CN202420437925.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-07
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2034-03-07
AI Technical Summary
Existing methods increase the conductive particle capture rate by increasing the ACF particle density, however this increases the risk of particles being stacked in the two electrodes.
Designing a chip structure involves the provision of multiple types of protrusions on the surface of the chip electrode, with the height and spacing of protrusions being optimized to improve the conductive particle capture rate while avoiding particle accumulation.
By designing different types of protrusions on the chip electrodes, the ACF conductive particle capture rate can be effectively improved and the risk of short circuit can be reduced, while there is no need to increase the ACF conductive particle density.
Smart Images
Figure CN222619762U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of chips and relates to a chip structure capable of improving the capture rate of ACF conductive particles. Background Art
[0002] At present, the driver chip used in the display industry needs to be attached to the panel through ACF to achieve conduction between the chip and the panel. The size of a single electrode of the driver chip is getting smaller and smaller, from 1000-2000um 2 , reduced to 500-600um 2 At the same time, the distance between electrodes is getting smaller and smaller, from 10-15um to 5-10um. To achieve good conduction between the chip and the panel, a certain number of conductive particles that meet the conduction requirements need to be captured on the electrode, and the particles cannot accumulate in the gap between the two electrodes to form a short circuit.
[0003] Most existing methods are to increase the density of ACF particles, but this method will increase the risk of particle accumulation and short circuit between the two electrodes. Utility Model Content
[0004] In view of this, the present invention provides a chip structure that can improve the capture rate of ACF conductive particles in order to solve the problem that the current method of increasing the density of ACF particles will increase the risk of short circuit caused by particle accumulation between two electrodes.
[0005] In order to achieve the above object, the utility model provides the following technical solutions:
[0006] A chip structure capable of improving the capture rate of ACF conductive particles comprises a chip electrode and various types of protrusions arranged on the surface of the chip electrode. Multiple conductive particles are captured on the chip electrode. The height of the protrusion is H, wherein 50nm≤H≤2 / 3d, and d is the diameter of the conductive particle.
[0007] Furthermore, the structure of the protrusions is circular, the horizontal distance between the centers of adjacent protrusions is a1, and the vertical distance between the centers of adjacent protrusions is b1, wherein d<a1<1.8d, d<b1<1.8d.
[0008] Furthermore, the structure of the protrusions is in a grid shape, the horizontal distance between the centers of adjacent protrusions is a2, and the vertical distance between the centers of adjacent protrusions is b2, wherein d<a2<1.8d, d<b2<1.8d.
[0009] Furthermore, the structure of the protrusions is in a horizontal stripe shape, and the vertical distance between the centers of adjacent protrusions is b3, wherein d<b3<1.8d.
[0010] Furthermore, the structure of the protrusions is in a diagonal shape, and the horizontal distance between the bottoms of adjacent protrusions is a3, wherein d<a3<1.8d.
[0011] Further, the bumps are electroplated on the chip electrodes.
[0012] The beneficial effects of the utility model are:
[0013] The chip structure disclosed by the utility model can improve the capture rate of ACF conductive particles. By designing different protrusions on the chip electrodes, the flow of conductive particles is prevented, thereby improving the capture rate of the chip electrodes for ACF conductive particles. The number of particles captured on the surface of the chip electrodes is increased without increasing the density of the ACF conductive particles, and the risk of short circuit can be reduced while improving the conduction performance.
[0014] Other advantages, objectives and features of the present invention will be described in the following description to some extent, and will be apparent to those skilled in the art based on the following examination and research, or can be taught from the practice of the present invention to some extent. The objectives and other advantages of the present invention can be achieved and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to make the purpose, technical solution and advantages of the utility model clearer, the utility model will be described in detail below in conjunction with the accompanying drawings, in which:
[0016] Figure 1 is a schematic structural diagram of the circular protrusion in this embodiment;
[0017] Figure 2 This is a schematic diagram of the structure of the lattice-shaped protrusions in this embodiment;
[0018] Figure 3 This is a schematic diagram of the structure of the horizontal stripe-shaped protrusions in this embodiment;
[0019] Figure 4 Schematic diagram of the structure of the oblique protrusion in this embodiment.
[0020] Reference numerals: chip electrode 1, protrusion 2. DETAILED DESCRIPTION
[0021] The following describes the implementation of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner. The following embodiments and the features in the embodiments can be combined with each other without conflict.
[0022] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on the present utility model. In order to better illustrate the embodiments of the present utility model, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.
[0023] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "front", "back" and the like indicate directions or positional relationships, they are based on the directions or positional relationships shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0024] like Figure 1-Figure 4 A chip structure that can improve the ACF conductive particle capture rate is shown, including a chip electrode 1 and various types of protrusions 2 electroplated on the surface of the chip electrode. Multiple conductive particles are captured on the chip electrode 1, and the height of the protrusion 2 is H, wherein 50nm≤H≤2 / 3d, d is the diameter of the conductive particle.
[0025] Reference Figure 1 The structure of the protrusion 2 can be circular, the horizontal distance between adjacent protrusions 2 is a1, and the vertical distance between adjacent protrusions 2 is b1, wherein d<a1<1.8d, d<b1<1.8d.
[0026] Reference Figure 2 The structure of the protrusions 2 may be in a grid shape, the horizontal distance between adjacent protrusions 2 is a2, and the vertical distance between adjacent protrusions 2 is b2, wherein d<a2<1.8d, d<b2<1.8d.
[0027] Reference Figure 3 The structure of the protrusions 2 may be in the form of horizontal stripes, and the vertical distance between adjacent protrusions 2 is b3, wherein d<b3<1.8d.
[0028] Reference Figure 4 The structure of the protrusions 2 may be in a twill shape, and the horizontal distance between the bottoms of adjacent protrusions 2 is a3, wherein d<a3<1.8d.
[0029] Different types of protrusions 2 can prevent the flow of conductive particles, thereby improving the conduction performance and reducing the risk of short circuit without increasing the density of ACF conductive particles.
[0030] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model rather than to limit it. Although the utility model has been described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the technical solution of the utility model can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution, which should be included in the scope of the claims of the utility model.
Claims
1. A chip structure capable of improving the capture rate of ACF conductive particles, characterized in that: It comprises a chip electrode and various types of protrusions arranged on the surface of the chip electrode. A plurality of conductive particles are captured on the chip electrode. The height of the protrusion is H, wherein 50nm≤H≤2 / 3d, and d is the diameter of the conductive particle.
2. The chip structure capable of improving the ACF conductive particle capture rate as claimed in claim 1, characterized in that: The protrusions have a circular structure, the horizontal distance between the centers of adjacent protrusions is a1, and the vertical distance between the centers of adjacent protrusions is b1, wherein d<a1<1.8d, d<b1<1.8d.
3. The chip structure capable of improving the ACF conductive particle capture rate as claimed in claim 1, characterized in that: The structure of the protrusions is in a grid shape, the horizontal distance between the centers of adjacent protrusions is a2, and the vertical distance between the centers of adjacent protrusions is b2, wherein d<a2<1.8d, d<b2<1.8d.
4. The chip structure capable of improving the ACF conductive particle capture rate as claimed in claim 1, characterized in that: The structure of the protrusions is in the shape of horizontal stripes, and the vertical distance between the centers of adjacent protrusions is b3, wherein d<b3<1.8d.
5. The chip structure capable of improving the ACF conductive particle capture rate as claimed in claim 1, characterized in that: The structure of the protrusions is in a diagonal shape, and the horizontal distance between the bottoms of adjacent protrusions is a3, wherein d<a3<1.8d.
6. The chip structure capable of improving the ACF conductive particle capture rate according to any one of claims 1 to 5, characterized in that: The protrusions are electroplated on the chip electrodes.