Wear-resistant and fingerprint-proof high-hardness glass cover plate applied to electronic product display screen

Abstract

The utility model discloses a wear-resistant and anti-fingerprint high-hardness glass cover plate applied to a display screen of an electronic product. Comprising a glass substrate, an antireflection film layer set located on one side of the glass substrate, a silicon dioxide activation layer located on the side, away from the glass substrate, of the antireflection film layer set, and an anti-fingerprint layer located on the side, away from the glass substrate, of the silicon dioxide activation layer. The antireflection film layer group comprises a plurality of silicon nitride layers and a plurality of silicon dioxide layers which are stacked in a crossed manner; wherein the film layer, closest to the glass substrate, in the antireflection film layer group is a silicon nitride layer, and the film layer, closest to the anti-fingerprint layer, in the antireflection film layer group is also a silicon nitride layer. By adopting the technical scheme, the anti-scratch capability, the antifouling capability and the anti-fingerprint capability of the surface of the glass cover plate can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic accessories, and in particular to a wear-resistant and fingerprint-resistant high-hardness glass cover plate used in display screens of electronic products. Background Art

[0002] With the development of technology, the service life of mobile phones, tablets, and wearable electronic products is getting longer and longer, and the requirements for cover glass are getting higher and higher. The surface scratch resistance directly determines the life of the cover glass.

[0003] In the prior art, a layer of anti-fingerprint film or anti-reflection film is usually coated on the surface of the cover glass, which can only play a limited anti-scratch effect, and the anti-scratch effect is not good. During the use of electronic products, collisions, scratches, bumps, and sliding often occur. When the glass surface does not have sufficient scratch resistance and hardness, the surface of the electronic product is severely worn after a certain period of use, and the substrate surface is easily exposed, so that the electronic product functions normally, but the surface of the cover glass is scratched, resulting in poor display effect and affecting the use.

[0004] In addition, protective films on electronic products are not aesthetically pleasing, and are even less aesthetically pleasing for electronic products with small display glass surface areas. Summary of the invention

[0005] The present invention provides a wear-resistant and fingerprint-resistant high-hardness glass cover plate applied to a display screen of an electronic product, which can improve the anti-scratch ability, anti-fouling ability and anti-fingerprint ability of the surface of the glass cover plate.

[0006] According to one aspect of the present invention, a wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens is provided, comprising: a glass substrate, an anti-reflection film layer group located on one side of the glass substrate, a silicon dioxide activation layer located on a side of the anti-reflection film layer group away from the glass substrate, and an anti-fingerprint layer located on a side of the silicon dioxide activation layer away from the glass substrate;

[0007] The anti-reflection film layer group includes cross-stacked multiple silicon nitride layers and multiple silicon dioxide layers; wherein the film layer closest to the glass substrate in the anti-reflection film layer group is the silicon nitride layer, and the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group is also the silicon nitride layer.

[0008] Optionally, the thickness of the silicon dioxide activation layer is greater than or equal to 5 nm and less than or equal to 10 nm;

[0009] The thickness of the anti-fingerprint layer is greater than or equal to 15 nm and less than or equal to 25 nm.

[0010] Optionally, the thickness of the silicon nitride layer closest to the anti-fingerprint layer in the anti-reflection film layer group is greater than or equal to the thickness of the silicon nitride layer closest to the glass substrate in the anti-reflection film layer group.

[0011] Optionally, the anti-reflection film layer group includes a first silicon nitride layer, a first silicon dioxide layer, a second silicon nitride layer, a second silicon dioxide layer, a third silicon nitride layer, a third silicon dioxide layer, and a fourth silicon nitride layer stacked in sequence;

[0012] Wherein, the first silicon nitride layer is the film layer closest to the glass substrate in the anti-reflection film layer group, and the fourth silicon nitride layer is the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group;

[0013] The thickness of the second silicon nitride layer is greater than 140 nm, and / or the thickness of the third silicon nitride layer is greater than 140 nm.

[0014] Optionally, the thickness of the first silicon nitride layer is greater than or equal to 5 nm and less than or equal to 11 nm;

[0015] The thickness of the first silicon dioxide layer is greater than or equal to 42 nm and less than or equal to 48 nm;

[0016] The thickness of the second silicon nitride layer is greater than or equal to 27 nm and less than or equal to 33 nm;

[0017] The thickness of the second silicon dioxide layer is greater than or equal to 20 nm and less than or equal to 30 nm;

[0018] The thickness of the third silicon nitride layer is greater than or equal to 142 nm and less than or equal to 148 nm;

[0019] The thickness of the third silicon dioxide layer is greater than or equal to 33 nm and less than or equal to 38 nm;

[0020] The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm.

[0021] Optionally, the thickness of the first silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm;

[0022] The thickness of the first silicon dioxide layer is greater than or equal to 27 nm and less than or equal to 33 nm;

[0023] The thickness of the second silicon nitride layer is greater than or equal to 152 nm and less than or equal to 158 nm;

[0024] The thickness of the second silicon dioxide layer is greater than or equal to 5 nm and less than or equal to 11 nm;

[0025] The thickness of the third silicon nitride layer is greater than or equal to 272 nm and less than or equal to 278 nm;

[0026] The thickness of the third silicon dioxide layer is greater than or equal to 32 nm and less than or equal to 38 nm;

[0027] The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm.

[0028] Optionally, the anti-reflection film layer group includes a first silicon nitride layer, a first silicon dioxide layer, a second silicon nitride layer, a second silicon dioxide layer, a third silicon nitride layer, a third silicon dioxide layer, a fourth silicon nitride layer, a fourth silicon dioxide layer, a fifth silicon nitride layer, a fifth silicon dioxide layer, a sixth silicon nitride layer, a sixth silicon dioxide layer, a seventh silicon nitride layer, a seventh silicon dioxide layer, an eighth silicon nitride layer, an eighth silicon dioxide layer, a ninth silicon nitride layer, a ninth silicon dioxide layer, a tenth silicon nitride layer, a twelfth silicon dioxide layer, and an eleventh silicon nitride layer stacked in sequence;

[0029] Wherein, the first silicon nitride layer is the film layer closest to the glass substrate in the anti-reflection film layer group, and the eleventh silicon nitride layer is the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group;

[0030] The thickness of the yth silicon nitride layer is greater than 160 nm; the thickness of the xth silicon dioxide layer and the thickness of the zth silicon dioxide layer are both greater than 230 nm; wherein 1<x<y<z<10, and x, y, and z are all integers.

[0031] Optionally, the thickness of the first silicon nitride layer is greater than or equal to 4 nm and less than or equal to 10 nm;

[0032] The thickness of the first silicon dioxide layer is greater than or equal to 59 nm and less than or equal to 65 nm;

[0033] The thickness of the second silicon nitride layer is greater than or equal to 12 nm and less than or equal to 18 nm;

[0034] The thickness of the second silicon dioxide layer is greater than or equal to 67 nm and less than or equal to 73 nm;

[0035] The thickness of the third silicon nitride layer is greater than or equal to 7 nm and less than or equal to 13 nm;

[0036] The thickness of the third silicon dioxide layer is greater than or equal to 235 nm and less than or equal to 241 nm;

[0037] The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm;

[0038] The thickness of the fourth silicon dioxide layer is greater than or equal to 30 nm and less than or equal to 36 nm;

[0039] The thickness of the fifth silicon nitride layer is greater than or equal to 165 nm and less than or equal to 171 nm;

[0040] The thickness of the fifth silicon dioxide layer is greater than or equal to 31 nm and less than or equal to 37 nm;

[0041] The thickness of the sixth silicon nitride layer is greater than or equal to 19 nm and less than or equal to 25 nm;

[0042] The thickness of the sixth silicon dioxide layer is greater than or equal to 244 nm and less than or equal to 250 nm;

[0043] The thickness of the seventh silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm;

[0044] The thickness of the seventh silicon dioxide layer is greater than or equal to 50 nm and less than or equal to 56 nm;

[0045] The thickness of the eighth silicon nitride layer is greater than or equal to 41 nm and less than or equal to 47 nm;

[0046] The thickness of the eighth silicon dioxide layer is greater than or equal to 19 nm and less than or equal to 25 nm;

[0047] The thickness of the ninth silicon nitride layer is greater than or equal to 95 nm and less than or equal to 101 nm;

[0048] The thickness of the ninth silicon dioxide layer is greater than or equal to 3 nm and less than or equal to 7 nm;

[0049] The thickness of the tenth silicon nitride layer is greater than or equal to 80 nm and less than or equal to 84 nm;

[0050] The thickness of the twelfth silicon oxide layer is greater than or equal to 21 nm and less than or equal to 25 nm;

[0051] The thickness of the eleventh silicon nitride layer is greater than or equal to 38 nm and less than or equal to 42 nm.

[0052] Optionally, the refractive index of the silicon nitride layer is greater than or equal to 1.85nd and less than or equal to 1.98nd;

[0053] The refractive index of the silicon dioxide layer is greater than or equal to 1.45nd and less than or equal to 1.48nd.

[0054] The technical solution of the present invention is to increase the hardness of the glass substrate by arranging an anti-reflection film layer group on one side of the glass substrate, wherein the anti-reflection film layer group includes cross-stacked multi-layer silicon nitride layers and multi-layer silicon dioxide layers, so that the Mohs hardness can reach 6 or above, and the friction resistance of φ6mm rubber and 10mm*10mm steel wool can be more than 5000 times with a force of 1KG; the reflectivity of light can also be reduced and the transmittance of light can be increased, and the reflectivity at 0° can reach 0.6 or below, and the average reflectivity in the visible light band (400nm-700nm) is 1% The transmittance of 420nm-680nm light can be 93% or above, and the average transmittance in the visible light band (400nm-700nm) can be 94.5% or above, which has an anti-reflection effect. In addition, an anti-fingerprint film is arranged on the surface of the anti-reflection film layer group to prevent dirt and fingerprints, and finally make the display screen surface of the applied electronic products resistant to collision, scratches, and bumps, and not easy to be distorted, and can prevent fingerprints, and can be cleaned with one wipe, and other performances are not affected, and there is no need to attach a protective film, which can make the electronic products more beautiful.

[0055] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0057] Figure 1 1 is a schematic structural diagram of a wear-resistant and anti-fingerprint high-hardness glass cover plate applied to a display screen of an electronic product provided by an embodiment of the present invention;

[0058] Figure 2 This is a schematic structural diagram of another wear-resistant and anti-fingerprint high-hardness glass cover plate applied to electronic product display screens provided by an embodiment of the present invention;

[0059] Figure 3 This is a schematic structural diagram of another wear-resistant and anti-fingerprint high-hardness glass cover plate applied to electronic product display screens provided by an embodiment of the present invention;

[0060] Figure 4 This is a schematic structural diagram of another wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0061] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0062] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0063] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0064] Figure 1 FIG. 1 is a schematic diagram of a wear-resistant and fingerprint-resistant high-hardness glass cover plate for an electronic product display screen provided by an embodiment of the present invention. Figure 1 The high-hardness glass cover plate includes a glass substrate 01, an anti-reflection film layer group 02 located on one side of the glass substrate 01, and an anti-fingerprint layer 03 located on the side of the anti-reflection film layer group 02 away from the glass substrate 01; the anti-reflection film layer group 02 includes a cross-stacked multi-layer silicon nitride layer 10 and a multi-layer silicon dioxide layer 20; wherein, the film layer closest to the glass substrate 01 in the anti-reflection film layer group 02 is the silicon nitride layer 10, and the film layer closest to the anti-fingerprint layer 03 in the anti-reflection film layer group 02 is also the silicon nitride layer 10.

[0065] The refractive index of the silicon nitride layer 10 is greater than or equal to 1.85nd and less than or equal to 1.98nd; the refractive index of the silicon dioxide layer 20 is greater than or equal to 1.45nd and less than or equal to 1.48nd. The cross-stacked silicon nitride layer 10 and the silicon dioxide layer 20 are beneficial to improving the light transmittance and reducing the light reflectivity.

[0066] Specifically, the anti-reflection film layer group 02 includes cross-stacked multi-layer silicon nitride layers 10 and multi-layer silicon dioxide layers 20. Multi-layer silicon nitride layers 10 can be provided. At the same time, the multi-layer silicon nitride layers 10 and multi-layer silicon dioxide layers 20 are cross-stacked, which is not easy to affect the transmittance of the product.

[0067] The outermost film layers on both sides of the anti-reflection film layer group 02 are both silicon nitride layers 10, that is, in the anti-reflection film layer group 02, the number of silicon nitride layers 10 is greater than the number of silicon dioxide layers 20. By increasing the number of harder silicon nitride layers 10 and reducing the number of relatively softer silicon dioxide layers 20, it is beneficial to increase the silicon nitride content in the anti-reflection film layer group 02 and reduce the silicon dioxide content, thereby increasing the hardness of the anti-reflection film layer group 02, making the high-hardness glass cover more wear-resistant and less prone to deformation.

[0068] In addition, the film layer closest to the glass substrate 01 in the anti-reflection film layer group 02 is a silicon nitride layer 10. The silicon nitride layer 10 is used as the base of the anti-reflection film layer group 02. On the one hand, the anti-reflection film layer group 02 can have a strong bottom film layer. On the other hand, the silicon nitride layer 10 can be better integrated with the glass substrate 01, which is conducive to the anti-reflection film layer group 02 being firmly fixed on one side of the glass substrate 01. The film layer closest to the anti-fingerprint layer 03 in the anti-reflection film layer group 02 is also a silicon nitride layer 10. The silicon nitride layer 10 is more corrosion-resistant and is conducive to improving the hardness of the surface of the anti-reflection film layer group 02.

[0069] Exemplarily, a magnetron sputtering method is used to deposit a silicon nitride layer 10 and a silicon dioxide layer 20 on a glass substrate 01. For example, a magnetron sputtering coating machine can be controlled to apply an electrical signal to two or four silicon targets, and the temperature of the silicon targets is rapidly increased to 1300°C-1400°C, and nitrogen is charged to react to obtain a silicon nitride layer 10; or, an electrical signal is applied to two or four silicon targets, and the temperature of the silicon targets is rapidly increased to 1300°C-1400°C, and oxygen is charged to react to obtain a silicon dioxide layer 20. After the anti-reflection film layer group 02 is prepared, the anti-fingerprint liquid is evaporated into gas by resistive high-temperature evaporation in a vacuum state, and the glass substrate 01 and the anti-reflection film layer group 02 are rotated on the rotating hanger bracket, so that the gaseous anti-fingerprint liquid is attached to the surface of the silicon nitride layer 10 of the anti-reflection film layer group 02.

[0070] It should be noted that the figure only exemplarily shows that the anti-reflection film layer group 02 includes three silicon nitride layers 10 and two silicon dioxide layers 20, but is not limited to this. The embodiment of the present invention does not specifically limit the number of silicon nitride layers 10 and silicon dioxide layers 20 in the anti-reflection film layer group 02.

[0071] Continue to refer Figure 1The high-hardness glass cover plate also includes a silicon dioxide activation layer 031 located between the anti-reflection film layer group 02 and the anti-fingerprint layer 03. In this way, the silicon nitride surface of the anti-reflection film layer group 02 on the side away from the glass substrate 01 can be activated to increase the adsorption force, so that the anti-fingerprint layer 03 can be closely attached to the side of the anti-reflection film layer group 02 away from the glass substrate 01. In addition, the refractive index of the silicon dioxide activation layer 031 is lower than the refractive index of the silicon nitride layer 10, which is conducive to improving the transmittance of the anti-reflection film layer group 02 away from the glass substrate 01, thereby improving the display effect when applied to the display screen of electronic products.

[0072] Based on the above embodiment, the thickness of the silicon dioxide activation layer 031 is greater than or equal to 5 nm and less than or equal to 10 nm; the thickness of the anti-fingerprint layer 03 is greater than or equal to 15 nm and less than or equal to 25 nm.

[0073] Specifically, a thinner silicon dioxide activation layer 031 is used as a base, and an anti-fingerprint layer 03 of a certain thickness is plated to achieve the effects of anti-fouling and anti-fingerprint.

[0074] In the embodiment of the present invention, an anti-reflection film layer group is arranged on one side of the glass substrate, and the anti-reflection film layer group includes cross-stacked multi-layer silicon nitride layers and multi-layer silicon dioxide layers, so that the hardness of the glass substrate can be increased, and the Mohs hardness can reach 6 or above, and the friction resistance of rubber φ6mm and steel wool 10mm*10mm can be more than 5000 times with a force of 1KG; the reflectivity of light can also be reduced and the transmittance of light can be increased, and the reflectivity at 0° can reach 0.6 or below, and the average reflectivity in the visible light band (400nm-700nm) is above 1%. Under the condition of high transmittance, the transmittance of 420nm-680nm light can be 93% or above, and the average transmittance in the visible light band (400nm-700nm) can be 94.5% or above, which has an anti-reflection effect. In addition, an anti-fingerprint film is arranged on the surface of the anti-reflection film layer group to prevent dirt and fingerprints, and finally make the display screen surface of the applied electronic products resistant to collision, scratches and bumps, not easy to be damaged, and can prevent fingerprints, which can be cleaned with one wipe, and other performances are not affected. There is no need to attach a protective film, which can make the electronic products more beautiful.

[0075] Optionally, the thickness of the silicon nitride layer 10 closest to the anti-fingerprint layer 03 in the anti-reflection film layer group 02 is greater than or equal to the thickness of the silicon nitride layer 10 closest to the glass substrate 01 in the anti-reflection film layer group 02. In this way, it is beneficial to significantly increase the hardness of the anti-reflection film layer group 02, increase the wear resistance of the anti-reflection film layer group 02, and thus increase the wear resistance of the high-hardness glass cover plate.

[0076] In an alternative embodiment, Figure 2 is a structural schematic diagram of another wear-resistant and anti-fingerprint high-hardness glass cover plate for electronic product display screens provided by an embodiment of the present invention, with reference to Figure 2 The anti-reflection film layer group 02 includes a first silicon nitride layer 11, a first silicon dioxide layer 21, a second silicon nitride layer 12, a second silicon dioxide layer 22, a third silicon nitride layer 13, a third silicon dioxide layer 23, and a fourth silicon nitride layer 14 stacked in sequence; wherein the first silicon nitride layer 11 is the film layer closest to the glass substrate 01 in the anti-reflection film layer group 02, and the fourth silicon nitride layer 14 is the film layer closest to the anti-fingerprint layer 03 in the anti-reflection film layer group 02; the thickness of the second silicon nitride layer 12 is greater than 140nm, and / or the thickness of the third silicon nitride layer 13 is greater than 140nm.

[0077] Specifically, by setting the second silicon nitride layer 12 and / or the third silicon nitride layer 13 thicker, it is helpful to increase the hardness of the anti-reflection film layer group 02, thereby increasing the hardness of the high-hardness glass cover plate. When applied to the display screen of electronic products, it is helpful to increase the hardness of the display screen surface and play an anti-scratch role.

[0078] In an optional embodiment, continue to refer to Figure 2 , the thickness of the first silicon nitride layer 11 is greater than or equal to 5 nm and less than or equal to 11 nm;

[0079] The thickness of the first silicon dioxide layer 21 is greater than or equal to 42 nm and less than or equal to 48 nm;

[0080] The thickness of the second silicon nitride layer 12 is greater than or equal to 27 nm and less than or equal to 33 nm;

[0081] The thickness of the second silicon dioxide layer 22 is greater than or equal to 20 nm and less than or equal to 30 nm;

[0082] The thickness of the third silicon nitride layer 13 is greater than or equal to 142 nm and less than or equal to 148 nm;

[0083] The thickness of the third silicon dioxide layer 23 is greater than or equal to 33 nm and less than or equal to 38 nm;

[0084] The thickness of the fourth silicon nitride layer 14 is greater than or equal to 17 nm and less than or equal to 23 nm.

[0085] Specifically, Table 1 lists the thickness and function of each film layer. Referring to Table 1, the first silicon nitride layer 11, the first silicon dioxide layer 21, the second silicon nitride layer 12 and the second silicon dioxide layer 22 are stacked to form a base, so that the bottom layer of the anti-reflection film layer group 02 has a higher hardness, and then the strength is improved by the thick third silicon nitride layer 13 to prevent puncture, and then the fourth silicon nitride layer 14 is stacked on the side of the third silicon dioxide layer 23 away from the third silicon nitride layer 13 to increase the surface hardness of the anti-reflection film layer group 02.

[0086] Table 1

[0087]

[0088]

[0089] Among them, the thickness of the first silicon dioxide layer 21, the second silicon dioxide layer 22 and the third silicon dioxide layer 23 is moderate, which can seal the holes of the first silicon nitride layer 11, the second silicon nitride layer 12 and the third silicon nitride layer 13, increase the compactness of the first silicon nitride layer 11, the second silicon nitride layer 12 and the third silicon nitride layer 13, and help improve the ability of the first silicon nitride layer 11, the second silicon nitride layer 12 and the third silicon nitride layer 13 to resist particle erosion, thereby increasing the strength of the first silicon nitride layer 11, the second silicon nitride layer 12 and the third silicon nitride layer 13. The thickness of the first silicon nitride layer 11 is relatively thin, which is conducive to fusion with the glass substrate 01; the thickness of the fourth silicon nitride layer 14 is relatively thin, which is conducive to increasing the transmittance of the light and improving the display effect.

[0090] In yet another optional embodiment, Figure 3 is a structural schematic diagram of another wear-resistant and anti-fingerprint high-hardness glass cover plate for electronic product display screens provided by an embodiment of the present invention, with reference to Figure 3 , the thickness of the first silicon nitride layer 11 is greater than or equal to 17 nm and less than or equal to 23 nm;

[0091] The thickness of the first silicon dioxide layer 21 is greater than or equal to 27 nm and less than or equal to 33 nm;

[0092] The thickness of the second silicon nitride layer 12 is greater than or equal to 152 nm and less than or equal to 158 nm;

[0093] The thickness of the second silicon dioxide layer 22 is greater than or equal to 5 nm and less than or equal to 11 nm;

[0094] The thickness of the third silicon nitride layer 13 is greater than or equal to 272 nm and less than or equal to 278 nm;

[0095] The thickness of the third silicon dioxide layer 23 is greater than or equal to 32 nm and less than or equal to 38 nm;

[0096] The thickness of the fourth silicon nitride layer 14 is greater than or equal to 17 nm and less than or equal to 23 nm.

[0097] Specifically, Table 2 lists the thickness and function of each film layer. Referring to Table 2, the first silicon nitride layer 11 and the first silicon dioxide layer 21 are used as the base, so that the bottom layer of the anti-reflection film layer group 02 has a higher hardness, and then the thick second silicon nitride layer 12 and the third silicon nitride layer 13 are used to stack the strength to prevent puncture. The thinner second silicon dioxide layer 22 can connect the thicker second silicon nitride layer 12 and the third silicon nitride layer 13, and can also seal the upper and lower layers to balance the stress and avoid the second silicon nitride layer 12 and the third silicon nitride layer 13 from cracking.

[0098] Table 2

[0099] Number of layers Membrane structure Each layer thickness nm effect 9 Anti-fingerprint layer 20±5 Anti-fouling and anti-fingerprint 8 Silicon dioxide active layer 5-10 Silica activated surface 7 Fourth silicon nitride layer 20±3 Improve hardness 6 The third silicon dioxide layer 35±3 Sealing holes to make silicon nitride denser 5 The third silicon nitride layer 275±3 Stacked strength to prevent puncture 4 Second silicon dioxide layer 8±3 Balanced Link Silicon Nitride 3 Second silicon nitride layer 155±3 Stacked strength to prevent puncture 2 First silicon dioxide layer 30±3 Overlay Primer 1 First silicon nitride layer 20±3 Primer for better fusion with glass 0 Glass substrate

[0100] In yet another optional embodiment, Figure 4 is a structural schematic diagram of another wear-resistant and anti-fingerprint high-hardness glass cover plate for electronic product display screens provided by an embodiment of the present invention, with reference to Figure 4 The anti-reflection film layer group 02 includes a first silicon nitride layer 11, a first silicon dioxide layer 21, a second silicon nitride layer 12, a second silicon dioxide layer 22, a third silicon nitride layer 13, a third silicon dioxide layer 23, a fourth silicon nitride layer 14, a fourth silicon dioxide layer 24, a fifth silicon nitride layer 15, a fifth silicon dioxide layer 25, a sixth silicon nitride layer 16, a sixth silicon dioxide layer 26, a seventh silicon nitride layer 17, a seventh silicon dioxide layer 27, an eighth silicon nitride layer 18, an eighth silicon dioxide layer 28, a ninth silicon nitride layer 19, a ninth silicon dioxide layer 29, a ninth silicon nitride layer 30, a ninth silicon nitride layer 31, a ninth silicon nitride layer 32, a ninth silicon nitride layer 33, a ninth silicon nitride layer 34, a ninth silicon nitride layer 35, a first silicon dioxide layer 36, a first silicon nitride layer 37, a first silicon nitride layer 38, a first silicon nitride layer 39, a first silicon nitride layer 40, a first silicon nitride layer 41, a first silicon nitride layer 42, a first silicon nitride layer 43, a first silicon nitride layer 44, a first silicon nitride layer 45, a first silicon nitride layer 46, a first silicon nitride layer 47, a first silicon nitride layer 48, a first silicon nitride layer 49, a first silicon nitride layer 41 silicon dioxide layer 29, tenth silicon nitride layer 110, twelfth silicon dioxide layer 210, eleventh silicon nitride layer 111; wherein, the first silicon nitride layer 11 is the film layer closest to the glass substrate 01 in the anti-reflection film layer group 02, and the eleventh silicon nitride layer 111 is the film layer closest to the anti-fingerprint layer 03 in the anti-reflection film layer group 02; the thickness of the yth silicon nitride layer is greater than 160nm; the thickness of the xth silicon dioxide layer and the thickness of the zth silicon dioxide layer are both greater than 230nm; wherein, 1<x<y<z<10, and x, y, z are all integers.

[0101] Specifically, by providing thick x-th silicon dioxide layer and z-th silicon dioxide layer, it is beneficial to increase the light transmittance of the anti-reflection film layer group 02, and then stacking a thick y-th silicon nitride layer, it is possible to improve the strength and prevent punctures.

[0102] In an optional embodiment, continue to refer to Figure 4 , the thickness of the first silicon nitride layer 11 is greater than or equal to 4 nm and less than or equal to 10 nm;

[0103] The thickness of the first silicon dioxide layer 21 is greater than or equal to 59 nm and less than or equal to 65 nm;

[0104] The thickness of the second silicon nitride layer 12 is greater than or equal to 12 nm and less than or equal to 18 nm;

[0105] The thickness of the second silicon dioxide layer 22 is greater than or equal to 67 nm and less than or equal to 73 nm;

[0106] The thickness of the third silicon nitride layer 13 is greater than or equal to 7 nm and less than or equal to 13 nm;

[0107] The thickness of the third silicon dioxide layer 23 is greater than or equal to 235 nm and less than or equal to 241 nm;

[0108] The thickness of the fourth silicon nitride layer 14 is greater than or equal to 17 nm and less than or equal to 23 nm;

[0109] The thickness of the fourth silicon dioxide layer 24 is greater than or equal to 30 nm and less than or equal to 36 nm;

[0110] The thickness of the fifth silicon nitride layer 15 is greater than or equal to 165 nm and less than or equal to 171 nm;

[0111] The thickness of the fifth silicon dioxide layer 25 is greater than or equal to 31 nm and less than or equal to 37 nm;

[0112] The thickness of the sixth silicon nitride layer 16 is greater than or equal to 19 nm and less than or equal to 25 nm;

[0113] The thickness of the sixth silicon dioxide layer 26 is greater than or equal to 244 nm and less than or equal to 250 nm;

[0114] The thickness of the seventh silicon nitride layer 17 is greater than or equal to 17 nm and less than or equal to 23 nm;

[0115] The thickness of the seventh silicon dioxide layer 27 is greater than or equal to 50 nm and less than or equal to 56 nm;

[0116] The thickness of the eighth silicon nitride layer 18 is greater than or equal to 41 nm and less than or equal to 47 nm;

[0117] The thickness of the eighth silicon dioxide layer 28 is greater than or equal to 19 nm and less than or equal to 25 nm;

[0118] The thickness of the ninth silicon nitride layer 19 is greater than or equal to 95 nm and less than or equal to 101 nm;

[0119] The thickness of the ninth silicon dioxide layer 29 is greater than or equal to 3 nm and less than or equal to 7 nm;

[0120] The thickness of the tenth silicon nitride layer 110 is greater than or equal to 80 nm and less than or equal to 84 nm;

[0121] The thickness of the twelfth silicon oxide layer 210 is greater than or equal to 21 nm and less than or equal to 25 nm;

[0122] The thickness of the eleventh silicon nitride layer 111 is greater than or equal to 38 nm and less than or equal to 42 nm.

[0123] Specifically, Table 3 lists the thickness and function of each film layer. Referring to Table 3, the thinner first silicon nitride layer 11 and the second silicon nitride layer 12 are used as the base, so that the bottom layer of the anti-reflection film layer group 02 has a higher hardness; the eleventh silicon nitride layer 111 is beneficial to increasing the surface hardness of the anti-reflection film layer group 02; the tenth silicon nitride layer 110, the ninth silicon nitride layer 19, the eighth silicon nitride layer 18, the seventh silicon nitride layer 17, the sixth silicon nitride layer 16, the fourth silicon nitride layer 14, and the third silicon nitride layer 13 are used for stacking strength to prevent puncture and make the anti-reflection film layer group 02 not easily deformed; the twelfth silicon oxide layer 210, the ninth silicon dioxide layer 29, the eighth silicon dioxide layer 29 The silicon dioxide layer 28 and the first silicon dioxide layer 21 can seal the holes up and down, increase the compactness of the first silicon nitride layer 11 and the second silicon nitride layer 12, and help increase the hardness of the first silicon nitride layer 11 and the second silicon nitride layer 12; the seventh silicon dioxide layer 27 and the second silicon dioxide layer 22 are beneficial to balancing the stress and the seventh silicon dioxide layer 27; the sixth silicon dioxide layer 26, the fifth silicon nitride layer 15 and the third silicon dioxide layer 23 work in coordination, which is beneficial to increase the transmittance of the anti-reflection film layer group 02. At the same time, the thicker fifth silicon nitride layer 15 is also beneficial to improve the strength and prevent punctures; the fourth silicon dioxide layer 24 and the fifth silicon dioxide layer 25 are used to link silicon nitride.

[0124] Table 3

[0125]

[0126]

[0127] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens, characterized in that: include: A glass substrate, an anti-reflection film layer group located on one side of the glass substrate, a silicon dioxide activation layer located on a side of the anti-reflection film layer group away from the glass substrate, and an anti-fingerprint layer located on a side of the silicon dioxide activation layer away from the glass substrate; The anti-reflection film layer group includes cross-stacked multiple silicon nitride layers and multiple silicon dioxide layers; wherein the film layer closest to the glass substrate in the anti-reflection film layer group is the silicon nitride layer, and the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group is also the silicon nitride layer.

2. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 1, characterized in that: The thickness of the silicon dioxide activation layer is greater than or equal to 5 nm and less than or equal to 10 nm; The thickness of the anti-fingerprint layer is greater than or equal to 15 nm and less than or equal to 25 nm.

3. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 1, characterized in that: The thickness of the silicon nitride layer closest to the anti-fingerprint layer in the anti-reflection film layer group is greater than or equal to the thickness of the silicon nitride layer closest to the glass substrate in the anti-reflection film layer group.

4. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 1, characterized in that: The anti-reflection film layer group includes a first silicon nitride layer, a first silicon dioxide layer, a second silicon nitride layer, a second silicon dioxide layer, a third silicon nitride layer, a third silicon dioxide layer, and a fourth silicon nitride layer stacked in sequence; Wherein, the first silicon nitride layer is the film layer closest to the glass substrate in the anti-reflection film layer group, and the fourth silicon nitride layer is the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group; The thickness of the second silicon nitride layer is greater than 140 nm, and / or the thickness of the third silicon nitride layer is greater than 140 nm.

5. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 4, characterized in that: The thickness of the first silicon nitride layer is greater than or equal to 5 nm and less than or equal to 11 nm; The thickness of the first silicon dioxide layer is greater than or equal to 42 nm and less than or equal to 48 nm; The thickness of the second silicon nitride layer is greater than or equal to 27 nm and less than or equal to 33 nm; The thickness of the second silicon dioxide layer is greater than or equal to 20 nm and less than or equal to 30 nm; The thickness of the third silicon nitride layer is greater than or equal to 142 nm and less than or equal to 148 nm; The thickness of the third silicon dioxide layer is greater than or equal to 33 nm and less than or equal to 38 nm; The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm.

6. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 4, characterized in that: The thickness of the first silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm; The thickness of the first silicon dioxide layer is greater than or equal to 27 nm and less than or equal to 33 nm; The thickness of the second silicon nitride layer is greater than or equal to 152 nm and less than or equal to 158 nm; The thickness of the second silicon dioxide layer is greater than or equal to 5 nm and less than or equal to 11 nm; The thickness of the third silicon nitride layer is greater than or equal to 272 nm and less than or equal to 278 nm; The thickness of the third silicon dioxide layer is greater than or equal to 32 nm and less than or equal to 38 nm; The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm.

7. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 1, characterized in that: The anti-reflection film layer group includes a first silicon nitride layer, a first silicon dioxide layer, a second silicon nitride layer, a second silicon dioxide layer, a third silicon nitride layer, a third silicon dioxide layer, a fourth silicon nitride layer, a fourth silicon dioxide layer, a fifth silicon nitride layer, a fifth silicon dioxide layer, a sixth silicon nitride layer, a sixth silicon dioxide layer, a seventh silicon nitride layer, a seventh silicon dioxide layer, an eighth silicon nitride layer, an eighth silicon dioxide layer, a ninth silicon nitride layer, a ninth silicon dioxide layer, a tenth silicon nitride layer, a twelfth silicon dioxide layer, and an eleventh silicon nitride layer stacked in sequence; Wherein, the first silicon nitride layer is the film layer closest to the glass substrate in the anti-reflection film layer group, and the eleventh silicon nitride layer is the film layer closest to the anti-fingerprint layer in the anti-reflection film layer group; The thickness of the yth silicon nitride layer is greater than 160 nm; the thickness of the xth silicon dioxide layer and the thickness of the zth silicon dioxide layer are both greater than 230 nm; wherein 1<x<y<z<10, and x, y, and z are all integers.

8. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 7, characterized in that: The thickness of the first silicon nitride layer is greater than or equal to 4 nm and less than or equal to 10 nm; The thickness of the first silicon dioxide layer is greater than or equal to 59 nm and less than or equal to 65 nm; The thickness of the second silicon nitride layer is greater than or equal to 12 nm and less than or equal to 18 nm; The thickness of the second silicon dioxide layer is greater than or equal to 67 nm and less than or equal to 73 nm; The thickness of the third silicon nitride layer is greater than or equal to 7 nm and less than or equal to 13 nm; The thickness of the third silicon dioxide layer is greater than or equal to 235 nm and less than or equal to 241 nm; The thickness of the fourth silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm; The thickness of the fourth silicon dioxide layer is greater than or equal to 30 nm and less than or equal to 36 nm; The thickness of the fifth silicon nitride layer is greater than or equal to 165 nm and less than or equal to 171 nm; The thickness of the fifth silicon dioxide layer is greater than or equal to 31 nm and less than or equal to 37 nm; The thickness of the sixth silicon nitride layer is greater than or equal to 19 nm and less than or equal to 25 nm; The thickness of the sixth silicon dioxide layer is greater than or equal to 244 nm and less than or equal to 250 nm; The thickness of the seventh silicon nitride layer is greater than or equal to 17 nm and less than or equal to 23 nm; The thickness of the seventh silicon dioxide layer is greater than or equal to 50 nm and less than or equal to 56 nm; The thickness of the eighth silicon nitride layer is greater than or equal to 41 nm and less than or equal to 47 nm; The thickness of the eighth silicon dioxide layer is greater than or equal to 19 nm and less than or equal to 25 nm; The thickness of the ninth silicon nitride layer is greater than or equal to 95 nm and less than or equal to 101 nm; The thickness of the ninth silicon dioxide layer is greater than or equal to 3 nm and less than or equal to 7 nm; The thickness of the tenth silicon nitride layer is greater than or equal to 80 nm and less than or equal to 84 nm; The thickness of the twelfth silicon oxide layer is greater than or equal to 21 nm and less than or equal to 25 nm; The thickness of the eleventh silicon nitride layer is greater than or equal to 38 nm and less than or equal to 42 nm.

9. The wear-resistant and fingerprint-resistant high-hardness glass cover plate for electronic product display screens according to claim 1, characterized in that: The refractive index of the silicon nitride layer is greater than or equal to 1.85nd and less than or equal to 1.98nd; The refractive index of the silicon dioxide layer is greater than or equal to 1.45nd and less than or equal to 1.48nd.

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