Level conversion circuit based on GaAs technology, chip and electronic equipment

Abstract

The utility model provides a GaAs technology-based level conversion circuit, chip and electronic equipment, the level conversion circuit comprises a level conversion module, a circuit threshold adjusting module and a power supply module, the level conversion module comprises a first level setting unit, a second level setting unit and a third level setting unit, the level conversion module is used for performing high-low level conversion; the circuit threshold adjusting module comprises a diode unit and a switch tube unit and is used for adjusting the switching threshold of the level conversion circuit; the power supply module comprises a first power supply unit and a second power supply unit, the first power supply unit is used for providing switching voltage for the level conversion circuit, and the second power supply unit is used for providing negative voltage for the first level setting unit. According to the utility model, by additionally using the switch tube, high and low temperature fluctuation of the switching threshold of the level switching circuit is reduced, the problem of abnormal switching of high and low temperature chips is effectively improved, and the stability and reliability of the chips are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of integrated circuits, and in particular to a level conversion circuit, a chip and an electronic device based on GaAs technology. Background Art

[0002] GaAs (Gallium Arsenide) is an important semiconductor material with excellent high-frequency performance and low noise characteristics. The GaAs process refers to the process of using gallium arsenide materials to manufacture electronic devices. As a representative of the second-generation semiconductor, gallium arsenide has the characteristics of high frequency, high electron mobility, high output power, high linearity and low noise, so it is widely used in the optoelectronics and radio frequency fields. Chips manufactured using the GaAs process usually have higher operating frequencies, lower power consumption and better noise performance.

[0003] Level conversion circuits are mainly used to solve the problem of level mismatch between different circuits or systems. For example, in digital circuits and embedded systems, it is often necessary to convert low-level signals into high-level signals. At this time, a level conversion circuit is needed. The level conversion circuit can be realized by using switching tubes, amplifiers and other devices.

[0004] In high-frequency communication systems, RF devices manufactured using GaAs technology may be required to achieve signal amplification and level conversion. By properly designing the circuit and selecting appropriate devices, a stable and reliable level conversion function can be achieved to meet the performance requirements of the system. However, the level conversion circuit implemented using GaAs technology has the characteristics of large fluctuations in high and low temperature thresholds, especially for circuits with a small circuit switching voltage range. The circuit switching may fail at high and low temperatures, causing the chip to not work properly, affecting the performance of the chip. As a result, the circuit switching voltage range can only be increased to allow the chip to switch normally in high and low temperature environments, which increases the difficulty of system design. Utility Model Content

[0005] In view of the above-mentioned deficiencies in the prior art, the utility model provides a level conversion circuit, chip and electronic device based on GaAs process, which effectively solves the problem that the circuit switching fails when the high and low temperature thresholds of the level conversion circuit implemented by GaAs process fluctuate greatly, resulting in the chip not being able to work normally.

[0006] In a first aspect, the utility model provides a level conversion circuit based on GaAs process, wherein the level conversion circuit comprises a level conversion module, a circuit threshold adjustment module and a power supply module, wherein:

[0007] The level conversion module comprises a first level setting unit, a second level setting unit and a third level setting unit, the first level setting unit is connected to the second level setting unit, the second level setting unit is connected to the third setting unit, and the level conversion module is used for high-low level conversion;

[0008] The circuit threshold adjustment module includes a diode unit and a switch tube unit, the switch tube unit is connected to the diode unit, the diode unit is connected to the first level setting unit, and the circuit threshold adjustment module is used to adjust the switching threshold of the level conversion circuit;

[0009] The power supply module includes a first power supply unit and a second power supply unit, the first power supply unit is connected to the diode unit, the second power supply unit is connected to the first level setting unit, the first power supply unit is used to provide a switching voltage for the level conversion circuit, and the second power supply unit is used to provide a negative voltage for the first level setting unit.

[0010] Furthermore, the first level setting unit includes a first transistor and a first resistor, the emitter of the first transistor is connected to the first end of the first resistor, the second end of the first resistor is connected to the base of the first transistor, and the two are connected to the second power supply unit.

[0011] Furthermore, the second level setting unit includes a second transistor, a third transistor and a second resistor, the emitter of the second transistor is connected to the collector of the first transistor, the collector of the second transistor is connected to the first end of the second resistor, the second end of the second resistor is connected to the base of the second transistor, and are commonly connected to the base of the third transistor, the emitter of the third transistor is connected to the base of the first transistor, and the collector of the third transistor is connected to the third level setting unit.

[0012] Furthermore, the third level setting unit includes a fourth transistor and a third resistor, the emitter of the fourth transistor is connected to the first end of the third resistor, the second end of the third resistor is connected to the base of the fourth transistor, and are jointly connected to the collector of the third transistor, and the collector of the fourth transistor is grounded.

[0013] Furthermore, the diode unit includes multiple diodes, and the multiple diodes are connected in series, the positive electrode of the first diode is connected to the first power supply unit, the negative electrode of the last diode is connected to the collector of the first transistor, and are commonly connected to the emitter of the second transistor.

[0014] Furthermore, the switch tube unit includes at least one switch tube, the switch tube short-circuits the diodes in the diode unit, and the number of the diodes is adjusted by the number of switch tubes turned on, thereby changing the switching threshold of the level conversion circuit.

[0015] Furthermore, the drain of the switching tube is connected to the first end of the diode, the source of the switching tube is connected to the second end of the diode, and the gate of the switching tube is connected to a level conversion circuit with a temperature coefficient, and the level conversion circuit with a temperature coefficient is used to provide a control voltage.

[0016] Furthermore, the switch tube is a pHEMT tube.

[0017] In a second aspect, the utility model provides a chip, comprising the level conversion circuit based on GaAs process as described in the first aspect of the utility model.

[0018] In a third aspect, the utility model provides an electronic device, comprising the chip as described in the second aspect of the utility model.

[0019] The level conversion circuit, chip and electronic device based on GaAs process provided by the utility model can reduce the high and low temperature fluctuation of the switching threshold of the level conversion circuit by using additional switch tubes, which can effectively improve the problem of abnormal high and low temperature chip switching caused by large fluctuation of the high and low temperature threshold of the level conversion circuit, avoid the adverse effects of excessively high or low temperatures on the chip, and effectively improve the stability and reliability of the high and low temperature threshold switching of the chip. By using GaAs process chips, it is not only helpful to improve the performance of the circuit itself, especially in a working environment that needs to adapt to a wide temperature range, but also helpful to improve the stability and reliability of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 This is a schematic diagram of the structure of a level conversion circuit based on GaAs technology provided by the utility model;

[0022] Figure 2 This is a schematic diagram of the connection of a level conversion circuit based on GaAs technology provided by the utility model;

[0023] Figure 3 It is a structural schematic diagram of a chip provided by the utility model;

[0024] Figure 4 The utility model is a structural schematic diagram of an electronic device provided by the utility model.

[0025] Description of main component symbols:

[0026] 10. Level conversion circuit based on GaAs process; 20. Chip; 30. Electronic device; 100. Level conversion module; 200. Circuit threshold adjustment module; 300. Power supply module. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be further described clearly and completely in combination with the drawings in the embodiments of the utility model. It should be noted that the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in this utility model specification are only for the purpose of describing specific embodiments and are not intended to limit the utility model. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0030] GaAs (Gallium Arsenide) is an important semiconductor material with excellent high-frequency performance and low noise characteristics. The GaAs process refers to the process of using gallium arsenide materials to manufacture electronic devices. As a representative of the second-generation semiconductor, gallium arsenide has the characteristics of high frequency, high electron mobility, high output power, high linearity and low noise, so it is widely used in the optoelectronics and radio frequency fields. Chips manufactured using the GaAs process usually have higher operating frequencies, lower power consumption and better noise performance.

[0031] Level conversion circuits are mainly used to solve the problem of level mismatch between different circuits or systems. For example, in digital circuits and embedded systems, it is often necessary to convert low-level signals into high-level signals. At this time, a level conversion circuit is needed. The level conversion circuit can be realized by using switching tubes, amplifiers and other devices.

[0032] In high-frequency communication systems, RF devices manufactured using GaAs technology may be required to achieve signal amplification and level conversion. By properly designing the circuit and selecting appropriate devices, a stable and reliable level conversion function can be achieved to meet the performance requirements of the system. However, the level conversion circuit implemented using GaAs technology has the characteristics of large fluctuations in high and low temperature thresholds, especially for circuits with a small circuit switching voltage range. The circuit switching may fail at high and low temperatures, causing the chip to not work properly, affecting the performance of the chip. As a result, the circuit switching voltage range can only be increased to allow the chip to switch normally in high and low temperature environments, which increases the difficulty of system design.

[0033] In view of the above-mentioned deficiencies in the prior art, an embodiment of the utility model provides a level conversion circuit based on GaAs process, which effectively solves the problem that the circuit switching fails when the high and low temperature thresholds of the level conversion circuit implemented by GaAs process fluctuate greatly, resulting in the chip not being able to work normally. Figure 1 This is a schematic diagram of the structure of the level conversion circuit based on GaAs technology provided by the utility model, such as Figure 1 As shown, the level conversion circuit 10 based on GaAs process includes: a level conversion module 100, a circuit threshold adjustment module 200 and a power supply module 300, wherein:

[0034] The level conversion module 100 includes a first level setting unit, a second level setting unit and a third level setting unit. The first level setting unit is connected to the second level setting unit, and the second level setting unit is connected to the third level setting unit. The level conversion module 100 is used for high-low level conversion.

[0035] The circuit threshold adjustment module 200 includes a diode unit and a switch tube unit. The switch tube unit is connected to the diode unit. The diode unit is connected to the first level setting unit. The circuit threshold adjustment module 200 is used to adjust the switching threshold of the level conversion circuit.

[0036] The power supply module 300 includes a first power supply unit and a second power supply unit, the first power supply unit is connected to the diode unit, the second power supply unit is connected to the first level setting unit, the first power supply unit is used to provide a switching voltage for the level conversion circuit, and the second power supply unit is used to provide a negative voltage for the first level setting unit.

[0037] Figure 2This is a schematic diagram of the connection of the level conversion circuit based on GaAs technology provided by the utility model, such as Figure 2 As shown, the first level setting unit includes a first transistor Q1 and a first resistor R 1， The emitter of the first transistor Q1 is connected to the first end of the first resistor R1 , the second end of the first resistor R1 is connected to the base of the first transistor Q1 , and both are connected to the second power supply unit.

[0038] The second level setting unit includes a second transistor Q2, a third transistor Q3 and a second resistor R2, the emitter of the second transistor Q2 is connected to the collector of the first transistor Q1, the collector of the second transistor Q2 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is connected to the base of the second transistor Q2, and are commonly connected to the base of the third transistor Q3, the emitter of the third transistor Q3 is connected to the base of the first transistor Q1, and the collector of the third transistor Q3 is connected to the third level setting unit.

[0039] The third level setting unit includes a fourth transistor Q4 and a third resistor R3, the emitter of the fourth transistor Q4 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the base of the fourth transistor Q4, and are commonly connected to the collector of the third transistor Q3, and the collector of the fourth transistor Q4 is grounded.

[0040] The diode unit includes a plurality of diodes. In the embodiment of the utility model, n diodes are connected in series. The positive electrode of the first diode D1 is connected to the first power supply unit, and the positive electrode of the last diode D n The negative electrode of is connected to the collector of the first transistor Q1 and is commonly connected to the emitter of the second transistor Q2. The switching threshold of the level conversion circuit can be adjusted by adjusting the number of diodes and the size of the first transistor Q1 and the first resistor R1.

[0041] The switch tube unit includes at least one switch tube, and the switch tube short-circuits the diode in the diode unit. The number of diodes is adjusted by adjusting the number of switch tubes turned on at high and low temperatures, thereby changing the high and low temperature threshold fluctuations of the level conversion circuit 10 based on the GaAs process, thereby changing the switching threshold size of the circuit. The number of switch tubes can be one or more, and the use of multiple switch tubes has a more obvious effect on improving the high and low temperature threshold fluctuations of the level conversion circuit.

[0042] In the embodiment of the utility model, the switch tube is a pHEMT tube (pseudo-modulated doped heterojunction field effect transistor), which is a radio frequency gallium arsenide power transistor manufactured using a special epitaxial layer grown on gallium arsenide, and is also a widely used electronic switch, especially in the fields of power management, motor control and signal switching. The pHEMT tube controls the conductive channel between the source and the drain based on its gate voltage. When the gate-source voltage exceeds the gate threshold voltage, a conductive channel is formed between the source and the drain, allowing current to pass. Conversely, when the gate-source voltage is lower than the gate threshold voltage, the channel is closed and the pHEMT tube is in the cut-off state.

[0043] Specifically, in an embodiment of the present invention, the drain of the pHEMT tube is connected to the anode of the diode, the source of the pHEMT tube is connected to the cathode of the diode, and the gate of the pHEMT tube is connected to a level conversion circuit with a temperature coefficient, which is used to provide a control voltage.

[0044] Specifically, when the voltage V1 provided by the first power supply unit is at a high level, the diode is turned on, and the voltage at point a is the voltage divided by the circuit of the diode, the first transistor Q1 and the first resistor R1. At this time, the voltage at point a is at a relatively high level, the voltage at point b is equal to the voltage at point a, and the third transistor Q3 is turned on. V out When the voltage V1 provided by the first power supply unit is at a low level, the diode is turned off. At this time, the voltage at point a is equal to the voltage V2 provided by the second power supply unit, which is relatively low. The third transistor Q3 is turned off, and V out Equal to 0 V. At this time, the high temperature threshold of the level conversion module is small, the low temperature threshold is large, and the high and low temperature thresholds fluctuate greatly.

[0045] In the embodiment of the utility model, the number of switch tubes in the switch tube unit is 2, namely, the first switch tube SW1 and the second switch tube SW2, the drain of the first switch tube SW1 is connected to the anode of the first diode D1, the source of the first switch tube SW1 is connected to the cathode of the first diode D1, and the gate of the first switch tube SW1 is connected to a level conversion circuit with a temperature coefficient, and the level conversion circuit with a temperature coefficient provides a control voltage V sw1 Similarly, the drain of the second switch tube SW2 is connected to the anode of the second diode D2, the source of the second switch tube SW2 is connected to the cathode of the second diode D2, and the gate of the second switch tube SW2 is connected to a level conversion circuit with a temperature coefficient, which provides a control voltage V sw2 , control voltage V sw1 and control voltage V sw2 The voltage magnitude decreases as the temperature increases, and the threshold value at which the voltage magnitude changes with temperature is adjustable and can be adjusted according to actual circuit requirements.

[0046] At room temperature, the first switch tube SW1 or the second switch tube SW2 is turned on, that is, the control voltage V sw1 and control voltage V sw2 One of them is at a high level, which is equivalent to the number of diodes being n-1; at low temperatures, both the first switch tube SW1 and the second switch tube SW2 are turned on, that is, the control voltage V sw1 and control voltage V sw2 Both are high level, which is equivalent to the number of diodes being N-2. The number of diodes is reduced relative to that at normal temperature, and the switching threshold of the level conversion circuit is reduced. At high temperature, the first switch tube SW1 or the second switch tube SW2 is closed, that is, the control voltage V sw1 and control voltage V sw2 They are all low level, the number of diodes is n, the number of diodes increases relative to normal temperature, and the switching threshold of the level conversion circuit increases.

[0047] As a preferred embodiment of the utility model, if the number of the switch tube is one, multiple diodes can be short-circuited by the switch tube, and the number of diodes can be directly adjusted by opening and closing the switch tube.

[0048] In summary, the level conversion circuit based on GaAs process provided by the embodiment of the utility model can effectively improve the problem of abnormal high and low temperature chip switching caused by large fluctuations in the high and low temperature thresholds of the level conversion circuit by using additional switch tubes, avoid the adverse effects of excessively high or low temperatures on the chip, and effectively improve the stability and reliability of high and low temperature chip switching. By using GaAs process chips, it is not only helpful to improve the performance of the circuit itself, especially in working environments that need to adapt to a wide temperature range, but also helps to improve the stability and reliability of the system.

[0049] Based on the same technical concept, the embodiment of the utility model further provides a chip 20, Figure 3 It is a schematic diagram of the structure of a chip provided by the present invention. The chip 20 includes the above-mentioned level conversion circuit 10 based on GaAs process.

[0050] According to the chip of the utility model, the above-mentioned level conversion circuit based on GaAs process is adopted, and the high and low temperature fluctuation of the switching threshold of the level conversion circuit is reduced by additionally using a switch tube, which can effectively improve the problem of abnormal high and low temperature chip switching caused by large fluctuation of the high and low temperature threshold of the level conversion circuit, avoid the adverse effects of excessively high or low temperatures on the chip, and effectively improve the stability and reliability of high and low temperature chip switching. By using GaAs process chips, it is not only helpful to improve the performance of the circuit itself, especially in a working environment that needs to adapt to a wide temperature range, but also helpful to improve the stability and reliability of the system.

[0051] Based on the same technical concept, the embodiment of the utility model further provides an electronic device 30, Figure 4 It is a structural schematic diagram of an electronic device provided by the utility model. The electronic device 30 includes the above-mentioned chip 20.

[0052] According to the electronic device of the utility model, the above-mentioned level conversion circuit based on GaAs process is adopted, and the high and low temperature fluctuation of the switching threshold of the level conversion circuit is reduced by additionally using a switch tube, which can effectively improve the problem of abnormal high and low temperature chip switching caused by large fluctuation of the high and low temperature threshold of the level conversion circuit, avoid the adverse effects of excessively high or low temperatures on electronic devices, and effectively improve the stability and reliability of chip switching in high and low temperature electronic devices. By using GaAs process chips, it is not only helpful to improve the performance of the circuit itself, especially in a working environment that needs to adapt to a wide temperature range, but also helpful to improve the stability and reliability of electronic equipment.

[0053] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0054] The above-mentioned embodiments only express several implementation methods of the utility model, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the utility model, and these all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

[0055] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the utility model.

Claims

1. A level conversion circuit based on GaAs technology, characterized in that: The level conversion circuit comprises a level conversion module, a circuit threshold adjustment module and a power supply module, wherein: The level conversion module comprises a first level setting unit, a second level setting unit and a third level setting unit, the first level setting unit is connected to the second level setting unit, the second level setting unit is connected to the third setting unit, and the level conversion module is used for high-low level conversion; The circuit threshold adjustment module includes a diode unit and a switch tube unit, the switch tube unit is connected to the diode unit, the diode unit is connected to the first level setting unit, and the circuit threshold adjustment module is used to adjust the switching threshold of the level conversion circuit; The power supply module includes a first power supply unit and a second power supply unit, the first power supply unit is connected to the diode unit, the second power supply unit is connected to the first level setting unit, the first power supply unit is used to provide a switching voltage for the level conversion circuit, and the second power supply unit is used to provide a negative voltage for the first level setting unit.

2. The level conversion circuit based on GaAs process according to claim 1, characterized in that: The first level setting unit includes a first transistor and a first resistor, the emitter of the first transistor is connected to the first end of the first resistor, the second end of the first resistor is connected to the base of the first transistor, and the two are connected to the second power supply unit.

3. The level conversion circuit based on GaAs process according to claim 2, characterized in that: The second level setting unit includes a second transistor, a third transistor and a second resistor, the emitter of the second transistor is connected to the collector of the first transistor, the collector of the second transistor is connected to the first end of the second resistor, the second end of the second resistor is connected to the base of the second transistor and are commonly connected to the base of the third transistor, the emitter of the third transistor is connected to the base of the first transistor, and the collector of the third transistor is connected to the third level setting unit.

4. The level conversion circuit based on GaAs process according to claim 3, characterized in that: The third level setting unit includes a fourth transistor and a third resistor, the emitter of the fourth transistor is connected to the first end of the third resistor, the second end of the third resistor is connected to the base of the fourth transistor, and the collector of the third transistor is connected together, and the collector of the fourth transistor is grounded.

5. The level conversion circuit based on GaAs process according to claim 4, characterized in that: The diode unit includes a plurality of diodes, the plurality of diodes are connected in series, the anode of the first diode is connected to the first power supply unit, the cathode of the last diode is connected to the collector of the first transistor, and the emitter of the second transistor is connected together.

6. The level conversion circuit based on GaAs process according to claim 5, characterized in that: The switch tube unit includes at least one switch tube, and the switch tube short-circuits the diodes in the diode unit. The number of diodes is adjusted by the number of switch tubes turned on, thereby changing the switching threshold of the level conversion circuit.

7. The level conversion circuit based on GaAs process according to claim 6, characterized in that: The drain of the switch tube is connected to the first end of the diode, the source of the switch tube is connected to the second end of the diode, and the gate of the switch tube is connected to a level conversion circuit with a temperature coefficient, and the level conversion circuit with a temperature coefficient is used to provide a control voltage.

8. The level conversion circuit based on GaAs process according to claim 7, characterized in that: The switch tube is a pHEMT tube.

9. A chip, characterized in that: The invention comprises a level conversion circuit based on GaAs process according to any one of claims 1 to 8.

10. An electronic device, characterized in that: Comprising the chip according to claim 9.

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