Tail gas device for controlling airflow uniformity and plasma deposition equipment

Abstract

The utility model provides a tail gas device for controlling airflow uniformity and plasma deposition equipment, and relates to the technical field of chemical vapor deposition equipment. The tail gas purification device is suitable for being connected to a gas outlet part of a reaction chamber and comprises a first tail gas channel and a second tail gas channel which are connected to the two sides of the gas outlet part of the reaction chamber, and the first tail gas channel and the second tail gas channel are connected with a pump body to pump out tail gas in the reaction chamber. The first tail gas channel and the second tail gas channel are each provided with an intelligent control valve so as to control the pressure or flow in the first tail gas channel and the second tail gas channel to be the same or tend to be the same, so that the airflow field in the reaction cavity is uniform. According to the scheme, the flow field in the reaction cavity is more uniform, and the uniformity of the thickness of the wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition equipment, in particular to an exhaust device for controlling airflow uniformity and plasma deposition equipment. Background Art

[0002] In existing plasma deposition equipment, the number of tail gas channels in the reaction chamber is one, and it is set at the center position below the end of the reaction chamber. The reaction gas enters the chamber through horizontal laminar flow to complete the reaction and is discharged from the tail gas channel. However, due to the large influence of the airflow field of the reaction chamber, the airflow field environment inside the reaction chamber is affected by the exhaust end, resulting in uneven flow field, which will affect the quality and uniformity of the film. Utility Model Content

[0003] In view of this, the purpose of the present invention is to provide an exhaust device for controlling the uniformity of airflow, so as to solve the problem of uneven internal airflow field in the existing reaction chamber caused by the single-channel exhaust device.

[0004] The utility model adopts the following scheme: the application provides an exhaust gas device for controlling the uniformity of airflow, which is suitable for being connected to the air outlet of a reaction chamber, and includes a first exhaust gas channel and a second exhaust gas channel connected on both sides of the air outlet of the reaction chamber, the first exhaust gas channel and the second exhaust gas channel are connected to a pump body to extract the exhaust gas in the reaction chamber, the first exhaust gas channel and the second exhaust gas channel are respectively provided with intelligent control valves to control the pressure or flow in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same so that the airflow field in the reaction chamber is uniform.

[0005] Furthermore, the first exhaust gas channel and the second exhaust gas channel are arranged at both sides of the gas outlet of the reaction chamber to form an angle of 30° to 180°.

[0006] Furthermore, the angle is 60°.

[0007] Furthermore, the first exhaust gas channel and the second exhaust gas channel are symmetrically distributed.

[0008] Furthermore, the intelligent control valve includes a relief valve, and the first exhaust channel and the second exhaust channel are both provided with a relief valve to control the flow rates in the first exhaust channel and the second exhaust channel to be the same or tend to be the same through the relief valve.

[0009] Furthermore, a gas flow meter is provided on the first exhaust gas channel and the second exhaust gas channel, and the gas flow rates of the first exhaust gas channel and the second exhaust gas channel are controlled to be the same or tend to be the same by adjusting the values ​​of the two gas flow meters to be the same or tend to be the same.

[0010] Furthermore, the intelligent control valve adopts a pressure regulating valve, and the first exhaust gas channel and the second exhaust gas channel are respectively provided with the pressure regulating valve to control the air pressure in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same through pressure.

[0011] Furthermore, a differential pressure gauge is provided on the first exhaust gas channel and the second exhaust gas channel to monitor the pressure difference between the two exhaust gas channels, and the pressure regulating valve is used to adjust the air pressure in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same.

[0012] Furthermore, the first exhaust gas channel and the second exhaust gas channel are connected to the same air pump.

[0013] The utility model also provides a plasma deposition device, comprising a reaction chamber and any one of the above-mentioned exhaust devices for controlling airflow uniformity, wherein the exhaust device is arranged at the air outlet of the reaction chamber.

[0014] Beneficial effects:

[0015] The utility model provides two exhaust gas channels, and the two exhaust gas channels are provided with intelligent regulating valves to control the air pressure or flow rate between the exhaust gas channels, so as to keep the air pressure or flow rate in the two exhaust gas channels the same or tending to be the same, so that the suction force of the pump body on the two exhaust gas channels remains the same or approximately the same, so that the airflow field up and down or left and right in the reaction chamber remains balanced, and the uniformity of the laminar distribution of the airflow field is improved, so as to improve the quality and uniformity of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic plan view of an exhaust device for controlling airflow uniformity according to an embodiment of the utility model;

[0017] Figure 2 This is a schematic diagram of the exhaust gas channel distribution of an exhaust gas device for controlling airflow uniformity according to an embodiment of the utility model;

[0018] Figure 3 This is a schematic diagram of the connection of an intelligent regulating valve of an exhaust gas device for controlling airflow uniformity on an exhaust gas channel according to an embodiment of the utility model;

[0019] Reference numerals: reaction chamber 1 , first tail gas channel 2 , second tail gas channel 3 , pump body 4 , overflow valve 5 , gas flow meter 6 , differential pressure meter 7 , gate valve 8 . DETAILED DESCRIPTION

[0020] Combination Figures 1 to 3As shown, this embodiment provides a plasma deposition device, including a reaction chamber 1 and an exhaust gas device for controlling the uniformity of airflow, wherein the exhaust gas device is arranged at the gas outlet of the reaction chamber 1. The exhaust gas device for controlling the uniformity of airflow is suitable for being connected to the gas outlet of the reaction chamber 1, and includes a first exhaust gas channel 2 and a second exhaust gas channel 3 connected to both sides of the gas outlet of the reaction chamber 1, wherein the first exhaust gas channel 2 and the second exhaust gas channel 3 are connected to a pump body 4 to extract the exhaust gas in the reaction chamber 1, and the first exhaust gas channel 2 and the second exhaust gas channel 3 are respectively provided with intelligent control valves to control the pressure or flow in the first exhaust gas channel 2 and the second exhaust gas channel 3 to be the same or tend to be the same so that the airflow field in the reaction chamber 1 is uniform.

[0021] Combination Figure 1 to Figure 2 As shown, in this embodiment, the reaction chamber 1 can be arranged in a cylindrical or square shape, one end of which is provided with an air inlet to input the reaction gas, and the other end is provided with the tail gas device and the pump body 4 to extract the reaction gas. The pump body 4 generates suction in the reaction chamber through the tail gas device. When the tail gas device is arranged in the middle of the end of the reaction chamber 1, the reaction gas in the reaction chamber 1 will be attracted to the tail gas device at the end, resulting in a convergence effect, but this will make the air flow field in the reaction chamber 1 uneven. In order to solve this problem, the present application symmetrically arranges the first tail gas channel 2 and the second tail gas channel 3 on both sides of the gas outlet of the reaction chamber 1, and extracts the tail gas on the upper and lower sides or the left and right sides of the reaction chamber through the two tail gas channels. Here, since the airflow in the reaction chamber is a stratospheric flow field, the unevenness of the flow field in the reaction chamber can be reduced by synchronously extracting it on the upper and lower sides or the left and right sides. Furthermore, intelligent control valves are provided on both the first tail gas channel 2 and the second tail gas channel 3 to control the pressure or flow rate in the first tail gas channel 2 and the second tail gas channel 3 to be the same or close to the same, so as to generate the same or similar vacuum suction force on the advection flow field inside the reaction chamber, so as to make the flow field in the reaction chamber uniform. At the same time, for wafer carriers with different rotation speeds, by installing intelligent regulating valves on the exhaust ports on both sides, the turbulence caused by the high-speed carrier can be balanced, and the flow field can be adjusted to form a uniform flow field on the wafer surface.

[0022] Combination Figure 3 As shown, in this embodiment, the first tail gas channel 2 and the second tail gas channel 3 are connected to the same air pump, so as to reduce the problem of pressure difference or flow rate balance control caused by different air pumps. The pump body 4 is connected to the tail of the two intelligent regulating valves, and a gate valve 8 is also provided between the intelligent regulating valve and the pump body 4 to realize the opening and closing of the tail gas channel. In a preferred embodiment, more tail gas channels can be provided, and the multiple tail gas channels are evenly distributed around the circumference at the outlet of the reaction chamber 1.

[0023] Combination Figure 1 to Figure 2 As shown, in one embodiment, the first tail gas channel 2 and the second tail gas channel 3 are arranged on both sides of the gas outlet of the reaction chamber 1 at an angle of 30° to 180°. Preferably, the angle is set to 60°, and the gas extraction ports are arranged in a lying manner, so that the flow field in the reaction chamber can present a laminar flow with the largest cross-sectional area, so that the growing film can obtain the best uniformity. In this embodiment, the first tail gas channel 2 and the second tail gas channel 3 are symmetrically distributed to improve uniformity.

[0024] Combination Figure 3 As shown, in one embodiment, the intelligent control valve includes a relief valve 5, and the first tail gas channel 2 and the second tail gas channel 3 are each provided with a relief valve 5 to control the flow in the first tail gas channel 2 and the second tail gas channel 3 to be the same or tend to be the same through the relief valve 5. Here, by controlling the opening of the relief valve 5, the flow of the two tail gas channels can be controlled to be the same or tend to be the same so that the suction of the two tail gas channels to the reaction chamber is the same or tends to be the same; further, a gas flow meter 6 is provided on the first tail gas channel 2 and the second tail gas channel 3, and the gas flow of the first tail gas channel 2 and the second tail gas channel 3 can be controlled to be the same or tend to be the same by adjusting the values ​​of the two gas flow meters 6 to be the same or tend to be the same. The gas flow meter 6 cooperates with the relief valve 5 to facilitate the control of the flow.

[0025] In another embodiment, the intelligent control valve adopts a pressure regulating valve, and the pressure regulating valve is respectively provided on the first tail gas channel 2 and the second tail gas channel 3 to control the air pressure in the first tail gas channel 2 and the second tail gas channel 3 to be the same or tend to be the same through pressure. Here, a differential pressure gauge 7 is provided on the first tail gas channel 2 and the second tail gas channel 3 to monitor the pressure difference between the two tail gas channels, and the pressure regulating valve is adjusted to make the air pressure in the first tail gas channel 2 and the second tail gas channel 3 the same or tend to be the same. The user can adjust the pressure regulating valve according to the differential pressure gauge 7, and the pressure regulating valve can also adopt an intelligent solenoid valve to automatically balance the air pressure on the two tail gas channels according to the data feedback of the differential pressure gauge 7.

[0026] This embodiment scheme utilizes opposite exhaust ports to allow the reaction chamber flow field to present a laminar flow with the largest cross-sectional area, thereby improving the uniformity of the laminar flow distribution in the air flow field and allowing the growing film to obtain the best uniformity. At the same time, the two exhaust gas channels can be monitored and adjusted in real time to avoid conflicts and interferences.

[0027] It should be understood that the above are only preferred implementations of the present utility model, and the protection scope of the present utility model is not limited to the above embodiments. All technical solutions under the concept of the present utility model belong to the protection scope of the present utility model.

[0028] The above description of the drawings used in the implementation manner only shows certain embodiments of the utility model and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

Claims

1. An exhaust device for controlling the uniformity of air flow, which is suitable for being connected to the gas outlet of a reaction chamber, characterized in that: It includes a first exhaust gas channel and a second exhaust gas channel connected on both sides of the gas outlet of the reaction chamber, the first exhaust gas channel and the second exhaust gas channel are connected to a pump body to extract the exhaust gas in the reaction chamber, and the first exhaust gas channel and the second exhaust gas channel are respectively provided with intelligent control valves to control the pressure or flow in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same so that the gas flow field in the reaction chamber is uniform; the intelligent control valve includes an overflow valve, and the first exhaust gas channel and the second exhaust gas channel are both provided with an overflow valve to control the flow in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same through the overflow valve.

2. The exhaust device for controlling airflow uniformity according to claim 1, characterized in that: The first tail gas channel and the second tail gas channel are arranged at both sides of the gas outlet of the reaction chamber to form an angle of 30° to 180°.

3. The exhaust device for controlling airflow uniformity according to claim 2, characterized in that: The angle is 60°.

4. The exhaust device for controlling airflow uniformity according to claim 2, characterized in that: The first exhaust gas channel and the second exhaust gas channel are symmetrically distributed.

5. The exhaust device for controlling airflow uniformity according to claim 1, characterized in that: A gas flow meter is provided on the first exhaust gas channel and the second exhaust gas channel, and the gas flow rates of the first exhaust gas channel and the second exhaust gas channel are controlled to be the same or tend to be the same by adjusting the values ​​of the two gas flow meters to be the same or tend to be the same.

6. The exhaust device for controlling airflow uniformity according to claim 1, characterized in that: The intelligent control valve adopts a pressure regulating valve, and the first exhaust gas channel and the second exhaust gas channel are respectively provided with the pressure regulating valve to control the air pressure in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same through pressure.

7. The exhaust device for controlling airflow uniformity according to claim 6, characterized in that: The first exhaust gas channel and the second exhaust gas channel are provided with a differential pressure gauge to monitor the pressure difference between the two exhaust gas channels, and the pressure regulating valve is used to adjust the air pressure in the first exhaust gas channel and the second exhaust gas channel to be the same or tend to be the same.

8. The exhaust device for controlling airflow uniformity according to claim 1, characterized in that: The first exhaust gas channel and the second exhaust gas channel are connected to the same air pump.

9. A plasma deposition device, characterized in that: It comprises a reaction chamber and an exhaust gas device for controlling airflow uniformity as claimed in any one of claims 1 to 8, wherein the exhaust gas device is arranged at the air outlet of the reaction chamber.

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