Silicon carbide prefabricated substrate
By setting a heat dissipation groove and heat conduction block on the prefabricated silicon carbide substrate and using the heat dissipation frame assembly for heat dissipation, the problem of the aluminum-permeable layer affecting heat dissipation is solved, and better heat dissipation effect and surface flatness are achieved.
Patent Information
- Application Number
- CN202420456379.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-11
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2034-03-11
AI Technical Summary
The prefabricated silicon carbide substrate is provided with an aluminized layer, which affects its heat dissipation effect and easily leads to overheating of the substrate.
A prefabricated silicon carbide substrate is designed, by providing first and second heat dissipation grooves on the silicon carbide skeleton and connecting grooves on the aluminized layer, heat conduction and heat dissipation are used to conduct heat and heat dissipate, thereby improving the heat dissipation effect of the substrate.
The heat dissipation effect of the silicon carbide substrate is effectively improved, and the problem of overheating of the substrate during use is avoided, while maintaining the effect of the aluminum-permeable layer to improve the surface flatness.
Smart Images
Figure CN222690668U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon carbide substrates, in particular to a silicon carbide prefabricated substrate. Background Art
[0002] As the integration of electronic components continues to increase and the power of power semiconductor devices continues to increase, the reliability requirements for electronic packaging are becoming higher and higher, and new requirements are put forward for the base material and structure used for electronic packaging. Although the traditional copper base has good thermal conductivity, its expansion coefficient does not match the ceramic substrate and semiconductor chip of power electronic components, which affects the reliability of the device and makes it difficult to meet the use requirements of high-power power electronic devices. Therefore, a substrate made of silicon carbide is used.
[0003] A silicon carbide substrate generally has an aluminized layer on the outside of the silicon carbide skeleton. The aluminized silicon carbide substrate can effectively guarantee the subsequent grinding amount, and will not appear the phenomenon that the aluminized layer is polished off and the silicon carbide substrate is exposed due to the thin local aluminized layer. It can effectively improve the surface flatness of the silicon carbide substrate and improve product performance. However, some existing silicon carbide prefabricated substrates are provided with an aluminized layer, which to a certain extent affects the heat dissipation effect of the silicon carbide substrate during use, and easily causes the silicon carbide substrate body to overheat during use. Therefore, a silicon carbide prefabricated substrate is proposed to address the above problem. Utility Model Content
[0004] The utility model aims to provide a silicon carbide prefabricated substrate to solve the problem that the silicon carbide prefabricated substrate is provided with an aluminum infiltration layer, which affects the heat dissipation effect of the silicon carbide substrate during use to a certain extent, and easily causes the silicon carbide substrate body to overheat during use.
[0005] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0006] A silicon carbide prefabricated substrate comprises a silicon carbide skeleton and an aluminized layer, wherein the front and rear sides of the silicon carbide skeleton are both provided with a first heat dissipation groove, the upper side of the silicon carbide skeleton is provided with a second heat dissipation groove, the four corners of the silicon carbide skeleton are provided with a thread groove, the outer side of the silicon carbide skeleton is fixedly connected to the aluminized layer, the front and rear sides of the aluminized layer are both provided with a first connection groove, the upper side of the aluminized layer is provided with a second connection groove, and the four corners of the upper side of the aluminized layer are provided with a third connection groove, the silicon carbide skeleton is fixedly connected to a first heat conducting block through the first heat dissipation groove, the silicon carbide skeleton is fixedly connected to a second heat conducting block through the second heat dissipation groove, the silicon carbide skeleton is spirally connected to a connecting bolt through a thread groove, the rear end of the first heat conducting block located at the rear side is clamped with a first heat dissipation frame assembly through a fourth connection groove, the front end of the first heat conducting block located at the front side is clamped with the second heat dissipation frame assembly through the fourth connection groove, the first heat dissipation frame assembly is provided with a clamping groove, the second heat dissipation frame assembly is fixedly connected to a clamping block, and the clamping block is clamped with the first heat dissipation frame assembly through the clamping groove.
[0007] Preferably, the silicon carbide skeleton is a rectangular plate structure, there are multiple first heat dissipation slots and multiple second heat dissipation slots, the first heat dissipation slots are all rectangular slots, the second heat dissipation slots are all circular slots, and there are four threaded slots.
[0008] Preferably, the aluminized layer is a rectangular covering layer, there are multiple first connecting grooves and multiple second connecting grooves, all of which are rectangular grooves, all of which are circular grooves, and there are four third connecting grooves, all of which are circular grooves.
[0009] Preferably, there are multiple first heat-conducting blocks and multiple second heat-conducting blocks, the bottom of the first heat-conducting blocks are engaged with the top of the second heat-conducting block, there are four connecting bolts, there are multiple fourth connecting grooves, all of which are rectangular grooves, and the first heat dissipation frame assembly and the second heat dissipation frame assembly are both provided with fourth connecting grooves.
[0010] Preferably, the first heat dissipation frame assembly is composed of three mutually perpendicular rectangular axes, the second heat dissipation frame assembly is a horizontally distributed rectangular axis, there are two snap-fitting grooves and snap-fitting blocks, the snap-fitting grooves are all rectangular grooves, and the snap-fitting blocks are all rectangular blocks.
[0011] Compared with the prior art, the beneficial effects of the utility model are:
[0012] In the utility model, by providing a first heat-conducting block, a second heat-conducting block, a first heat dissipation frame assembly and a second heat-conducting frame assembly, heat conduction can be performed through the first heat-conducting block and the second heat-conducting block, and the heat of the silicon carbide skeleton and the electronic devices connected thereto can be quickly transferred to the first heat-dissipating frame assembly and the second heat-dissipating frame assembly, and the heat can be quickly dissipated through the first heat-dissipating frame assembly and the second heat-dissipating frame assembly. The device can effectively improve the surface flatness of the silicon carbide skeleton in the aluminizing layer, and effectively improve the heat dissipation effect during the use of the device, thereby preventing the silicon carbide substrate from overheating during use. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 It is a schematic diagram of the overall structure of the utility model;
[0014] Figure 2 It is an exploded view of the overall structure of the utility model;
[0015] Figure 3 This is a schematic diagram of the structure of the heat conducting block of the utility model;
[0016] Figure 4 This is a cross-sectional view of the silicon carbide substrate structure of the utility model;
[0017] Figure 5 This is a cross-sectional view of the aluminized layer structure of the utility model;
[0018] Figure 6 This is a schematic diagram of the heat dissipation frame structure of the utility model;
[0019] Figure 7 This is a schematic diagram of the structure of the second heat dissipation frame assembly of the utility model.
[0020] In the figure: 1. silicon carbide skeleton; 2. first heat dissipation groove; 3. second heat dissipation groove; 4. threaded groove; 5. aluminized layer; 6. first connecting groove; 7. second connecting groove; 8. third connecting groove; 9. first heat conductive block; 10. second heat conductive block; 11. connecting bolt; 12. fourth connecting groove; 13. first heat dissipation frame assembly; 14. second heat dissipation frame assembly; 15. snap-fit groove; 16. snap-fit block. DETAILED DESCRIPTION
[0021] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0022] See also Figure 1-7 , the utility model provides a technical solution:
[0023] A silicon carbide prefabricated substrate comprises a silicon carbide skeleton 1 and an aluminized layer 5, wherein the silicon carbide skeleton 1 is provided with a first heat dissipation groove 2 on both the front and rear sides, the silicon carbide skeleton 1 is provided with a second heat dissipation groove 3 on the upper side, the silicon carbide skeleton 1 is provided with a thread groove 4 at the four corners, the silicon carbide skeleton 1 is fixedly connected to the aluminized layer 5 on the outer side, the aluminized layer 5 is provided with a first connection groove 6 on both the front and rear sides, the aluminized layer 5 is provided with a second connection groove 7 on the upper side, the aluminized layer 5 is provided with a third connection groove 8 at the four corners on the upper side, the silicon carbide skeleton 1 is fixedly connected to a first heat conducting block 9 through the first heat dissipation groove 2, and the silicon carbide skeleton 1 is fixedly connected to a first heat conducting block 9 through the first heat dissipation groove 2. The second heat dissipation groove 3 is fixedly connected to the second heat-conducting block 10, the silicon carbide skeleton 1 is spirally connected to the connecting bolt 11 through the threaded groove 4, the rear end of the first heat-conducting block 9 located on the rear side is clamped with the first heat dissipation frame assembly 13 through the fourth connecting groove 12, and the front end of the first heat-conducting block 9 located on the front side is clamped with the second heat dissipation frame assembly 14 through the fourth connecting groove 12, the first heat dissipation frame assembly 13 is provided with a clamping groove 15, the second heat dissipation frame assembly 14 is fixedly connected to the clamping block 16, and the clamping block 16 is clamped with the first heat dissipation frame assembly 13 through the clamping groove 15.
[0024] The silicon carbide skeleton 1 is a rectangular plate structure, the first heat dissipation groove 2 and the second heat dissipation groove 3 are both multiple, the first heat dissipation groove 2 is a rectangular groove, the second heat dissipation groove 3 is a circular groove, the threaded groove 4 has four, and the device and the packaging shell can be fixedly connected by connecting bolts 11; the aluminized layer 5 is a rectangular covering layer, the first connecting groove 6 and the second connecting groove 7 are both multiple, the first connecting groove 6 is a rectangular groove, the second connecting groove 7 is a circular groove, the third connecting groove 8 has four, and the third connecting groove 8 is a circular groove, through which the connecting bolt 11 can pass; the first heat conducting block 9 and the second heat conducting block 10 are both multiple, the bottom of the first heat conducting block 9 is engaged with the top of the second heat conducting block 10, and the connection There are four bolts 11 and multiple fourth connecting grooves 12, all of which are rectangular grooves. The first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14 are both provided with fourth connecting grooves 12, and the first heat conductive block 9 and the first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14 can be connected through the fourth connecting grooves 12; the first heat dissipation frame assembly 13 is composed of three mutually perpendicular rectangular axes, and the second heat dissipation frame assembly 14 is a horizontally distributed rectangular axis. There are two snap-fitting grooves 15 and two snap-fitting blocks 16, all of which are rectangular grooves, and all of which are rectangular blocks, so that the first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14 can be connected.
[0025] Working process: before use, fix the first heat conductive block 9 and the second heat conductive block 10 to the silicon carbide skeleton 1, and then fix the aluminizing layer 5, and then clamp and fix the first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14 on the outside of the silicon carbide skeleton 1 and the aluminizing layer 5. After the electronic device is installed, the packaging shell can be fixed to the upper side of the substrate by connecting bolts 11. The first heat conductive block 9 and the second heat conductive block 10 both have high thermal conductivity. Heat can be conducted through the first heat conductive block 9 and the second heat conductive block 10 to quickly transfer the heat of the silicon carbide skeleton 1 and the electronic devices connected to it to the first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14. The first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14 both have high thermal conductivity. Heat can be quickly dissipated through the first heat dissipation frame assembly 13 and the second heat dissipation frame assembly 14. The device can effectively improve the surface flatness of the silicon carbide skeleton 1 in the aluminizing layer 5, while effectively improving the heat dissipation effect of the device during use, thereby avoiding overheating of the silicon carbide substrate during use.
[0026] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A silicon carbide prefabricated substrate, comprising a silicon carbide skeleton (1) and an aluminized layer (5), characterized in that: The silicon carbide skeleton (1) is provided with a first heat dissipation groove (2) on both the front and rear sides, the silicon carbide skeleton (1) is provided with a second heat dissipation groove (3) on the upper side, the silicon carbide skeleton (1) is provided with a thread groove (4) at the four corners, the silicon carbide skeleton (1) is fixedly connected to an aluminized layer (5) on the outer side, the aluminized layer (5) is provided with a first connection groove (6) on both the front and rear sides, the aluminized layer (5) is provided with a second connection groove (7) on the upper side, and the aluminized layer (5) is provided with a third connection groove (8) at the four corners on the upper side, the silicon carbide skeleton (1) is fixedly connected to a first heat conducting block (9) via the first heat dissipation groove (2), and the silicon carbide skeleton (1) is fixedly connected to a first heat conducting block (9) via the second heat dissipation groove (3). The first heat conducting block (9) is fixedly connected to the second heat conducting block (10), the silicon carbide skeleton (1) is screwed to the connecting bolt (11) through the threaded groove (4), the rear end of the first heat conducting block (9) located on the rear side is engaged with the first heat dissipation frame assembly (13) through the fourth connecting groove (12), the front end of the first heat conducting block (9) located on the front side is engaged with the second heat dissipation frame assembly (14) through the fourth connecting groove (12), the first heat dissipation frame assembly (13) is provided with an engaging groove (15), the second heat dissipation frame assembly (14) is fixedly connected to the engaging block (16), and the engaging block (16) is engaged with the first heat dissipation frame assembly (13) through the engaging groove (15).
2. The silicon carbide prefabricated substrate according to claim 1, characterized in that: The silicon carbide skeleton (1) is a rectangular plate structure, the first heat dissipation groove (2) and the second heat dissipation groove (3) are both multiple, the first heat dissipation groove (2) are all rectangular grooves, the second heat dissipation groove (3) are all circular grooves, and there are four thread grooves (4).
3. The silicon carbide prefabricated substrate according to claim 1, characterized in that: The aluminized layer (5) is a rectangular covering layer, the first connecting grooves (6) and the second connecting grooves (7) are both multiple, the first connecting grooves (6) are all rectangular grooves, the second connecting grooves (7) are all circular grooves, the third connecting grooves (8) are four, and the third connecting grooves (8) are all circular grooves.
4. The silicon carbide prefabricated substrate according to claim 1, characterized in that: There are multiple first heat-conducting blocks (9) and multiple second heat-conducting blocks (10), the bottom of each of the first heat-conducting blocks (9) is engaged with the top of each of the second heat-conducting blocks (10), there are four connecting bolts (11), there are multiple fourth connecting grooves (12), each of the fourth connecting grooves (12) is a rectangular groove, and the first heat dissipation frame assembly (13) and the second heat dissipation frame assembly (14) are both provided with a fourth connecting groove (12).
5. The silicon carbide prefabricated substrate according to claim 1, characterized in that: The first heat dissipation frame assembly (13) is composed of three mutually perpendicular rectangular axes, the second heat dissipation frame assembly (14) is a horizontally distributed rectangular axis, the engaging grooves (15) and the engaging blocks (16) are both provided with two each, the engaging grooves (15) are both rectangular grooves, and the engaging blocks (16) are both rectangular blocks.