Reconfigurable power amplifier
By introducing reconfigurable resistor elements and reconfigurable capacitor elements into the gate stabilization circuit of the power amplifier, the temperature-dependent resistance value is used to achieve stability and efficient performance under low and high temperature conditions, and the performance differences of traditional power amplifiers under different temperature conditions are solved.
Patent Information
- Application Number
- CN202420607090.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-27
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2034-03-27
AI Technical Summary
Traditional power amplifiers have difficulties in stability and performance under low and high temperature conditions, especially in continuous wave applications with high temperature performance degradation.
A reconfigurable power amplifier is designed, and by introducing reconfigurable resistive elements and reconfigurable capacitor elements into the gate stabilization circuit, the temperature-dependent resistance value of the first phase change film is used to realize automatic adjustment of the circuit under low and high temperature conditions.
Ensure stability under low temperature conditions and maintain efficient performance under high temperature conditions, solving the problem of performance differences in traditional power amplifiers under different temperature conditions.
Smart Images
Figure CN222691703U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of amplifiers, in particular to a reconfigurable power amplifier. Background Art
[0002] At present, the amplification circuit of the traditional power amplifier structure is mainly composed of transistors, and the gate and drain of the transistor are respectively provided with bias structures, and the source is grounded through a ground hole. Due to the self-excitation phenomenon of the transistor, it is necessary to add a stable structure to the gate, such as forming a stable circuit structure between the gate and the bias circuit by combining capacitors and resistors. The stable circuit structure increases the low-temperature stability, but sacrifices the high-temperature characteristics, so that the high-temperature gain (power gain) of the power amplifier will decrease, especially for the power amplifier of continuous wave application, the high-temperature performance decreases more. Utility Model Content
[0003] The utility model aims to provide a reconfigurable power amplifier, which can solve the problem that low-temperature stability and high-temperature performance cannot be achieved at the same time, and ensures its high-temperature performance while ensuring low-temperature stability.
[0004] The embodiment of the utility model is achieved as follows:
[0005] In a first aspect, the utility model provides a reconfigurable power amplifier, comprising a gate bias circuit, a gate stabilization circuit and a transistor, wherein the output end of the gate stabilization circuit is connected to the gate of the transistor, and the gate bias circuit is connected to the input end of the gate stabilization circuit; the gate stabilization circuit comprises a reconfigurable resistance element, a reconfigurable capacitance element and a structural resistor, wherein one end of the reconfigurable capacitance element connected in parallel with the structural resistor is connected to the gate of the transistor, and the other end is connected in series with the reconfigurable resistance element, and the reconfigurable resistance element is connected to the gate bias circuit;
[0006] The reconfigurable resistor element includes a first thin film electrode, a second thin film electrode, a first thin film resistor, a second thin film resistor and a first phase change film, the first thin film resistor and the second thin film resistor are arranged in parallel and spaced between the first thin film electrode and the second thin film electrode, the second thin film electrode is connected to the reconfigurable capacitor element, the first thin film electrode is connected to the gate bias circuit, the first phase change film is arranged between the second thin film electrode and the second thin film resistor, and is arranged in parallel with the first thin film resistor and spaced, wherein the first phase change film is connected in series with the second thin film resistor and then connected in parallel with the first thin film resistor, the resistance value of the first phase change film is inversely proportional to the temperature, and the resistance value of the first thin film resistor is directly proportional to the temperature.
[0007] In an optional implementation, the resistance value of the first thin-film resistor is greater than the resistance value of the second thin-film resistor.
[0008] In an optional embodiment, the first thin-film resistor and the second thin-film resistor are made of the same material, and the thickness of the first thin-film resistor is greater than the thickness of the second thin-film resistor.
[0009] In an optional embodiment, the first phase change film is a VxOy film or a germanium antimony tellurium alloy film, and the thickness of the first film resistor is equal to the sum of the thickness of the second film resistor and the first phase change film.
[0010] In an optional embodiment, the reconfigurable capacitor element includes a first capacitor electrode, a second capacitor electrode, a first capacitor, a second capacitor and a second phase change film, the first capacitor electrode is connected to the reconfigurable resistor element, the second capacitor electrode is connected to the gate of the transistor, the first capacitor and the second capacitor are arranged in parallel between the first capacitor electrode and the second capacitor electrode, and the second phase change film is arranged between the second capacitor and the first capacitor electrode, wherein the resistance value of the second phase change film is inversely proportional to the temperature.
[0011] In an optional embodiment, the first capacitor includes a first electrode plate and a second electrode plate, and the second capacitor includes a third electrode plate and a fourth electrode plate. The first electrode plate is connected to the first capacitor electrode, the second electrode plate is connected to the second capacitor electrode, the first electrode plate and the second electrode plate correspond to each other, and a first dielectric layer is sandwiched between them; the third electrode plate is connected to the second phase change film, the second phase change film is connected to the first capacitor electrode, the fourth electrode plate is connected to the second capacitor electrode, the third electrode plate and the fourth electrode plate correspond to each other, and a second dielectric layer is sandwiched between them.
[0012] In an optional implementation, the capacitance value of the first capacitor is greater than the capacitance value of the second capacitor.
[0013] In an optional embodiment, the material of the first dielectric layer is the same as that of the second dielectric layer, the second phase change film is a VxOy film or a germanium antimony tellurium alloy film, and the projection area of the second electrode plate on the first electrode plate is greater than the projection area of the fourth electrode plate on the third electrode plate.
[0014] In an optional embodiment, the reconfigurable power amplifier further includes a reconfigurable source circuit and a drain bias circuit, wherein the drain bias circuit is connected to the drain of the transistor, and the reconfigurable source circuit is connected to the source of the transistor and is grounded.
[0015] In an optional embodiment, the reconfigurable source circuit includes a reconfigurable source element, the reconfigurable source element includes a front metal electrode, a back metal electrode, a substrate and a third phase change film, the substrate is provided with two grounding holes running through the front and back sides of the substrate, the third phase change film is arranged on one of the grounding holes, the front metal electrode is arranged on the front side of the substrate and covers the two grounding holes, and the front metal electrode is connected to the source of the transistor, the back metal electrode is arranged on the back side of the substrate and covers the two grounding holes, and the back metal electrode is used for grounding, wherein the third phase change film is used to isolate the front metal electrode and the back metal electrode, and the resistance value of the third phase change film is inversely proportional to the temperature.
[0016] The beneficial effects of the embodiments of the utility model include:
[0017] The reconfigurable power amplifier provided by the embodiment of the utility model has an output end of a gate stabilization circuit connected to a gate of a transistor, and a gate bias circuit connected to an input end of the gate stabilization circuit, wherein the gate stabilization circuit is composed of a reconfigurable resistance element, specifically, a first thin film resistor and a second thin film resistor are arranged in parallel between a first thin film electrode and a second thin film electrode, the first thin film electrode is connected to a gate bias circuit, a first phase change film is arranged in series between the second thin film electrode and the second thin film resistor, and is arranged in parallel with the first thin film resistor and at intervals, so that the second thin film resistor is arranged in parallel with the first thin film resistor after being connected in series with the first phase change film. In addition, the resistance value of the first phase change film is inversely proportional to the temperature. At low temperatures, the resistance value of the first phase change film is high, the circuit where the first phase change film is located is approximately turned off, and the second thin film resistor does not work. At this time, it is mainly the first thin film resistor that works. At high temperatures, the first thin film resistor is large, the resistance value of the first phase change film is low, the circuit where the first phase change film is located is turned on, and the second thin film resistor works. The second thin film resistor is connected in parallel with the first thin film resistor, which reduces the resistance value of the overall resistor and ensures the high temperature characteristics of the gate stabilization circuit. Compared with the prior art, the reconfigurable power amplifier provided by the utility model adds a second thin film resistor and a first phase change film in the reconfigurable resistance element, so that under low temperature conditions, the resistance of the first phase change film is relatively large, which can ensure the normal operation of the gate stabilization circuit and the stability of the power amplifier. Under high temperature conditions, even if the resistance value of the first thin film resistor increases sharply, the resistance value of the first phase change film can be sharply reduced under high temperature conditions, and the second thin film resistor is turned on and connected in parallel with the first thin film resistor to reduce the resistance value of the overall resistor, which can also ensure the normal operation of the gate stabilization circuit and the high temperature performance of the power amplifier. That is, it can solve the problem that low temperature stability and high temperature performance cannot be achieved at the same time, and ensure its high temperature performance while ensuring low temperature stability. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.
[0019] Figure 1 A circuit diagram of a reconfigurable power amplifier provided in an embodiment of the utility model;
[0020] Figure 2 for Figure 1 The structure of the reconfigurable resistance element in the gate stabilization circuit and its equivalent circuit diagram;
[0021] Figure 3 for Figure 1 The structure of the reconfigurable capacitor element and its equivalent circuit diagram;
[0022] Figure 4 for Figure 1 The structure of the reconfigurable source element in the reconfigurable source circuit and its equivalent circuit diagram.
[0023] icon:
[0024] 100-reconfigurable power amplifier; 110-transistor; 120-gate bias circuit; 130-gate stabilization circuit; 131-reconfigurable resistor element; 132-first thin film electrode; 133-second thin film electrode; 134-first thin film resistor; 135-second thin film resistor; 136-first phase change film; 140-structural resistor; 150-reconfigurable capacitor element; 151-first capacitor electrode; 152-second capacitor electrode; 153-first electrode plate; 154-second electrode plate; 155-third electrode plate; 156-fourth electrode plate; 157-second phase change film; 158-first capacitor; 159-second capacitor; 160-reconfigurable source circuit; 161-reconfigurable source element; 162-front metal electrode; 163-back metal electrode; 164-substrate; 165-third phase change film; 166-grounding hole; 170-drain bias circuit. DETAILED DESCRIPTION
[0025] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0026] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0027] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0028] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.
[0029] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.
[0030] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0031] Please refer to Figure 1 The embodiment of the utility model provides a reconfigurable power amplifier 100, which can solve the problem that low-temperature stability and high-temperature performance cannot be achieved at the same time, and ensures its high-temperature performance while ensuring low-temperature stability.
[0032] The reconfigurable power amplifier 100 provided in this embodiment includes a gate bias circuit 120 and a gate stabilization circuit 130, wherein the output end of the gate stabilization circuit is connected to the gate of the transistor 110, and the gate bias circuit is connected to the input end of the gate stabilization circuit; the gate stabilization circuit includes a reconfigurable resistance element 131, a reconfigurable capacitance element 150 and a structural resistor 140, wherein one end of the reconfigurable capacitance element 150 connected in parallel with the structural resistor 140 is connected to the gate of the transistor 110, and the other end is connected in series with the reconfigurable resistance element 131, and the reconfigurable resistance element 131 is connected to the gate bias circuit 120.
[0033] See also Figure 2 The reconfigurable resistor element 131 can be integrated on the transistor 110. The reconfigurable resistor element 131 includes a first thin film electrode 132, a second thin film electrode 133, a first thin film resistor 134, a second thin film resistor 135 and a first phase change film 136. The first thin film resistor 134 and the second thin film resistor 135 are arranged in parallel between the first thin film electrode 132 and the second thin film electrode 133. The second thin film electrode 133 is connected to the reconfigurable capacitor element. The first thin film electrode 132 is connected to the gate bias circuit 120. The first phase change film 136 is arranged in series between the second thin film electrode 133 and the second thin film resistor 135, and is arranged in parallel with the first thin film resistor 134. The resistance value of the first phase change film 136 is inversely proportional to the temperature, and the resistance value of the first thin film resistor 134 is directly proportional to the temperature.
[0034] It should be noted that in this embodiment, the first thin film resistor 134 and the second thin film resistor 135 are both conventional metal resistors, whose resistance increases with the increase of temperature, while the first phase change film 136 adopts a special phase change material, whose resistance decreases with the increase of temperature. In this embodiment, the second thin film resistor 135 and the first phase change film 136 are added to the reconfigurable resistance element 131. Under low temperature conditions, the resistance of the first phase change film 136 is relatively large, the circuit where the first phase change film 136 is located is approximately turned off, the second thin film resistor does not work, and only the first thin film resistor 134 works, which can ensure the normal operation of the gate stabilization circuit 130 and the stability of the power amplifier. Under high temperature conditions, even if the resistance value of the first thin film resistor 134 increases sharply, and the resistance value of the first phase change film 136 can be sharply reduced under high temperature conditions, the circuit where the first phase change film is located is turned on, and the second thin film resistor is connected in parallel with the first thin film resistor, which reduces the resistance value of the overall resistor, and can also ensure the normal operation of the gate stabilization circuit 130 and the high temperature characteristics of the power amplifier.
[0035] It should also be noted that the low temperature condition mentioned in this embodiment refers to the room temperature condition of 15-25°C, while the high temperature condition mentioned in this embodiment refers to the room temperature condition above 70°.
[0036] In this embodiment, the resistance value of the first thin film resistor 134 is greater than the resistance value of the second thin film resistor 135. Specifically, under low temperature conditions, the resistance value of the first thin film resistor 134 is greater than the resistance value of the second thin film resistor 135, and the resistance value of the first phase change film 136 is much greater than the resistance value of the first thin film resistor 134. The circuit where the first phase change film 136 is located is approximately turned off. Therefore, at this time, the gate stabilization circuit 130 is mainly played by the first thin film resistor 134. Under high temperature conditions, the resistance value of the first phase change film 136 decreases sharply, the circuit where the first phase change film 136 is located is turned on, and the resistance value of the first thin film resistor 134 increases sharply and is greater than the sum of the resistance values of the first phase change film 136 and the second thin film resistor 135. Therefore, at this time, the second thin film resistor 135 and the first phase change film 136 of the gate stabilization circuit 130 are connected in series and then connected in parallel with the first thin film resistor 134, which can reduce the overall resistance value and ensure high temperature performance.
[0037] In this embodiment, the first thin film resistor 134 and the second thin film resistor 135 are made of the same material, and the thickness of the first thin film resistor 134 is greater than the thickness of the second thin film resistor 135. Specifically, the first thin film resistor 134 and the second thin film resistor 135 can both be metal resistors, and the thickness of the first thin film resistor 134 is greater than the thickness of the second thin film resistor 135, wherein the thickness here refers to the vertical direction of the first thin film electrode 132 and the second thin film electrode 133, so the resistance value of the first thin film resistor 134 is greater than the resistance value of the second thin film resistor 135.
[0038] Furthermore, the first phase change film 136 is a VxOy film or a germanium antimony tellurium alloy film, and the thickness of the first film resistor 134 is equal to the sum of the thickness of the second film resistor 135 and the first phase change film 136. Preferably, the first phase change film 136 can be made of VO 2 The material has the characteristics of high resistance at low temperature and low resistance at high temperature. The resistance ratio between the high resistance state and the low resistance state can be between 50000 and 100000. Of course, the phase transition temperature of the material can also be changed by changing the material components in the VxOy film.
[0039] See also Figure 3 The reconfigurable capacitor element 150 includes a first capacitor electrode 151, a second capacitor electrode 152, a first capacitor, a second capacitor and a second phase change film 157. The first capacitor electrode 151 is connected to the reconfigurable resistor element, the second capacitor electrode 152 is connected to the gate of the transistor, the first capacitor and the second capacitor are arranged in parallel between the first capacitor electrode 151 and the second capacitor electrode 152, and the second phase change film 157 is arranged between the second capacitor and the first capacitor electrode 151, wherein the resistance value of the second phase change film 157 is inversely proportional to the temperature.
[0040] The first capacitor includes a first electrode plate 153 and a second electrode plate 154, and the second capacitor includes a third electrode plate 155 and a fourth electrode plate 156. The first electrode plate 153 is connected to the first capacitor electrode 151, and the second electrode plate 154 is connected to the second capacitor electrode 152. The first electrode plate 153 and the second electrode plate 154 correspond to each other and are sandwiched by a first dielectric layer; the third electrode plate 155 is connected to the second phase change film 157, and the second phase change film 157 is connected to the first capacitor electrode 151. The fourth electrode plate 156 is connected to the second capacitor electrode 152. The third electrode plate 155 and the fourth electrode plate 156 correspond to each other and are sandwiched by a second dielectric layer.
[0041] In this embodiment, by setting the second phase change film 157, under low temperature conditions, the resistance of the second phase change film 157 is relatively large, and at this time only the first capacitor 158 acts as a capacitor. Under high temperature conditions, the resistance of the second phase change film 157 is reduced, so that the second capacitor 159 is connected to the circuit, and the second capacitor 159 is connected in parallel with the first capacitor 158, which can greatly improve the overall capacitance value.
[0042] In this embodiment, the capacitance value of the first capacitor 158 is greater than the capacitance value of the second capacitor 159. Specifically, the material of the first dielectric layer is the same as the material of the second dielectric layer, the second phase change film 157 is a VxOy film or a germanium antimony tellurium alloy film, and the projection area of the second electrode plate 154 of the first capacitor 158 on the first electrode plate 153 is greater than the projection area of the fourth electrode plate 156 of the second capacitor 159 on the third electrode plate 155.
[0043] See also Figure 4 Furthermore, the reconfigurable power amplifier 100 also includes a reconfigurable source circuit 160 and a drain bias circuit 170, the drain bias circuit 170 is connected to the drain of the transistor 110, and the reconfigurable source circuit 160 is connected to the source of the transistor 110 and grounded.
[0044] The reconfigurable source circuit 160 includes a reconfigurable source element 161, which can be integrated on the transistor 110. The reconfigurable source element 161 includes a front metal electrode 162, a back metal electrode 163, a substrate 164 and a third phase change film 165. The substrate 164 is provided with two grounding holes 166 that penetrate the front and back sides of the substrate 164. The third phase change film 165 is arranged on one of the grounding holes 166. The front metal electrode 162 is arranged on the front side of the substrate 164 and covers the two grounding holes 166. The front metal electrode 162 is connected to the source of the transistor 110. The back metal electrode 163 is arranged on the back side of the substrate 164 and covers the two grounding holes 166. The back metal electrode 163 is used for grounding. The third phase change film 165 is used to isolate the front metal electrode 162 and the back metal electrode 163, and the resistance value of the third phase change film 165 is inversely proportional to the temperature.
[0045] In this embodiment, the third phase change film 165 can also be a VxOy film or a germanium antimony tellurium alloy film, and the third phase change film 165 can completely block the front metal electrode and the back metal electrode 163. The grounding hole 166 in the conventional technology is usually a single-hole structure, and the source grounding hole 166 has a certain inductance, which will reduce the high-temperature power gain of the transistor 110. In this embodiment, the third phase change film 165 is used to reconstruct the grounding hole 166. Under low temperature conditions, the grounding hole 166 where the third phase change film 165 is located is not conductive, and grounding is achieved by another grounding hole 166; while under high temperature conditions, the grounding hole 166 where the third phase change film 165 is located is conductive and used in parallel with another grounding hole 166, which can greatly reduce the source inductance at high temperature and ensure high-temperature power gain.
[0046] In summary, in the reconfigurable power amplifier 100 provided in this embodiment, the output end of the gate stabilization circuit 130 is connected to the gate of the transistor 110, and the gate bias circuit 120 is connected to the input end of the gate stabilization circuit 130, wherein the gate stabilization circuit 130 is composed of a reconfigurable resistance element 131, specifically, the first thin film resistor 134 and the second thin film resistor 135 are arranged in parallel between the first thin film electrode 132 and the second thin film electrode 133, the second thin film electrode 133 is connected to the input end of the reconfigurable capacitor element 150, the first thin film electrode 132 is connected to the gate bias circuit 120, the first phase change film 136 is arranged in series between the second thin film electrode 133 and the second thin film resistor 135, and is parallel to and spaced from the first thin film resistor 134, so that the second thin film resistor 135 and the first phase change film 136 form an equivalent resistance, and the equivalent resistance is arranged in parallel with the first thin film resistor 134. Moreover, the resistance value of the first phase change film 136 is inversely proportional to the temperature. At low temperatures, the resistance value of the first phase change film 136 is relatively high, and the circuit where the first phase change film is located is approximately turned off. At this time, the first thin film resistor 134 mainly plays the role of a resistor. At high temperatures, the first thin film resistor 134 is relatively large, and the resistance value of the first phase change film 136 is relatively low. The circuit where the first phase change film is located is turned on. At this time, the second thin film resistor 135 is connected in parallel with the first thin film resistor 134, which reduces the overall resistance value and ensures the high temperature characteristics of the gate stabilization circuit 130. In addition, by designing the reconfigurable source element 161, it has the characteristic of increased gain at high temperatures. Compared with the prior art, the reconfigurable power amplifier 100 provided in this embodiment adds the second thin film resistor 135 and the first phase change film 136 to the reconfigurable resistance element 131, so that under low temperature conditions, the resistance of the first phase change film 136 is relatively large, and the circuit where it is located is approximately turned off. It is mainly the first thin film resistor 134 that works, which can ensure the normal operation of the gate stabilization circuit 130 and the stability of the power amplifier. Under high temperature conditions, even if the resistance value of the first thin film resistor 134 increases sharply, the resistance value of the first phase change film 136 can be sharply reduced under high temperature conditions, so that the circuit where the first phase change film 136 is located is turned on, and the second thin film resistor 135 is connected in parallel with the first thin film resistor 134, which reduces the resistance value of the overall resistor, and can also ensure the normal operation of the gate stabilization circuit 130 and the high temperature performance of the power amplifier. That is, it can solve the problem that low temperature stability and high temperature performance cannot be achieved at the same time, and ensure its high temperature performance while ensuring low temperature stability. At the same time, a reconfigurable gate is realized by cooperating with a reconfigurable capacitor element 150 and a reconfigurable element by a reconfigurable source element 161, which has the characteristic of increased gain at high temperature, and can greatly increase the power and efficiency of the power amplifier in continuous wave applications.
[0047] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. A reconfigurable power amplifier, characterized in that: The invention comprises a gate bias circuit, a gate stabilization circuit and a transistor, wherein the output end of the gate stabilization circuit is connected to the gate of the transistor, and the gate bias circuit is connected to the input end of the gate stabilization circuit; the gate stabilization circuit comprises a reconfigurable resistance element, a reconfigurable capacitance element and a structural resistor, wherein one end of the reconfigurable capacitance element connected in parallel with the structural resistor is connected to the gate of the transistor, and the other end is connected in series with the reconfigurable resistance element, and the reconfigurable resistance element is connected to the gate bias circuit; The reconfigurable resistor element includes a first thin film electrode, a second thin film electrode, a first thin film resistor, a second thin film resistor and a first phase change film, the first thin film resistor and the second thin film resistor are arranged in parallel and spaced between the first thin film electrode and the second thin film electrode, the second thin film electrode is connected to the reconfigurable capacitor element, the first thin film electrode is connected to the gate bias circuit, the first phase change film is arranged between the second thin film electrode and the second thin film resistor, and is arranged in parallel with the first thin film resistor and spaced, wherein the first phase change film is connected in series with the second thin film resistor and then connected in parallel with the first thin film resistor, the resistance value of the first phase change film is inversely proportional to the temperature, and the resistance value of the first thin film resistor is directly proportional to the temperature.
2. The reconfigurable power amplifier according to claim 1, characterized in that: The resistance value of the first thin-film resistor is greater than the resistance value of the second thin-film resistor.
3. The reconfigurable power amplifier according to claim 2, characterized in that: The first thin-film resistor and the second thin-film resistor are made of the same material, and the thickness of the first thin-film resistor is greater than the thickness of the second thin-film resistor.
4. The reconfigurable power amplifier according to claim 2, characterized in that: The first phase change film is a VxOy film or a germanium antimony tellurium alloy film, and the thickness of the first film resistor is equal to the sum of the thickness of the second film resistor and the first phase change film.
5. The reconfigurable power amplifier according to claim 1, characterized in that: The reconfigurable capacitor element includes a first capacitor electrode, a second capacitor electrode, a first capacitor, a second capacitor and a second phase change film, the first capacitor electrode is connected to the reconfigurable resistor element, the second capacitor electrode is connected to the gate of the transistor, the first capacitor and the second capacitor are arranged in parallel between the first capacitor electrode and the second capacitor electrode, and the second phase change film is arranged between the second capacitor and the first capacitor electrode, wherein the resistance value of the second phase change film is inversely proportional to the temperature.
6. The reconfigurable power amplifier according to claim 5, characterized in that: The first capacitor includes a first electrode plate and a second electrode plate, the second capacitor includes a third electrode plate and a fourth electrode plate, the first electrode plate is connected to the first capacitor electrode, the second electrode plate is connected to the second capacitor electrode, the first electrode plate and the second electrode plate correspond to each other and sandwich a first dielectric layer; The third electrode plate is connected to the second phase change film, the second phase change film is connected to the first capacitor electrode, the fourth electrode plate is connected to the second capacitor electrode, the third electrode plate corresponds to the fourth electrode plate, and a second dielectric layer is sandwiched therebetween.
7. The reconfigurable power amplifier according to claim 6, characterized in that: The capacitance value of the first capacitor is greater than the capacitance value of the second capacitor.
8. The reconfigurable power amplifier according to claim 7, characterized in that: The material of the first dielectric layer is the same as that of the second dielectric layer, the second phase change film is a VxOy film or a germanium antimony tellurium alloy film, and the projection area of the second electrode plate on the first electrode plate is greater than the projection area of the fourth electrode plate on the third electrode plate.
9. The reconfigurable power amplifier according to claim 1, characterized in that: The reconfigurable power amplifier further includes a reconfigurable source circuit and a drain bias circuit, wherein the drain bias circuit is connected to the drain of the transistor, and the reconfigurable source circuit is connected to the source of the transistor and is grounded.
10. The reconfigurable power amplifier according to claim 9, characterized in that: The reconfigurable source circuit includes a reconfigurable source element, and the reconfigurable source element includes a front metal electrode, a back metal electrode, a substrate and a third phase change film. The substrate is provided with two grounding holes that penetrate the front and back sides of the substrate. The third phase change film is arranged on one of the grounding holes. The front metal electrode is arranged on the front side of the substrate and covers the two grounding holes, and the front metal electrode is connected to the source of the transistor. The back metal electrode is arranged on the back side of the substrate and covers the two grounding holes, and the back metal electrode is used for grounding. The third phase change film is used to isolate the front metal electrode and the back metal electrode, and the resistance value of the third phase change film is inversely proportional to the temperature.