Mutually matched dual chamber system for fabricating high-k dielectric films

Abstract

The present application provides a mutually matched dual-chamber system for preparing a high-k dielectric film, comprising: a first chamber, a second chamber, an inner chamber total air inlet pipe, an inner chamber total air outlet pipe, an outer chamber total air inlet pipe and an outer chamber total air outlet pipe, wherein the first chamber and the second chamber are used to process different substrates at the same time. The dual-chamber system of the present application comprises a first chamber and a second chamber with a consistent structure, and the reaction chamber of the first chamber and the reaction chamber of the second chamber share an air inlet and outlet pipe, and the transmission chamber of the first chamber and the transmission chamber of the second chamber also share an air inlet and outlet pipe, so that the two chambers match in structure and air inlet and outlet, so that the process performance of the two chambers matches, and can be used to simultaneously process and obtain two substrates with consistent performance, thereby improving production and yield.

Description

Technical Field

[0001] The present application mainly relates to the semiconductor field, and in particular to a mutually matched dual-chamber system for preparing a high-k dielectric film. Background Art

[0002] With the rapid development of integrated circuits, a high dielectric constant (high k) material is needed to replace the traditional SiO2 dielectric layer in conventional MOSFET structures to meet the requirements of good insulation properties and higher field effects. At present, high-k dielectric films in the industry are usually prepared using thermal atomic layer deposition (thermal ALD, tALD) technology. However, the film formation speed of ALD equipment is slower than that of CVD (Chemical Vapor Deposition) equipment. While ensuring the film quality, how to improve the yield (throughput, T-put) of high-k dielectric films is one of the important topics of concern in the industry. Utility Model Content

[0003] The technical problem to be solved by the present application is to provide a highly matched dual-chamber system to improve the uniformity of high-k dielectric film deposition on dual-chamber wafers and to increase production and yield.

[0004] To solve the above technical problems, the present application provides a mutually matched dual-chamber system for preparing a high-k dielectric film, comprising: a first chamber, a second chamber, an inner chamber total air inlet pipeline, an inner chamber total air outlet pipeline, an outer chamber total air inlet pipeline and an outer chamber total air outlet pipeline, wherein the first chamber and the second chamber are used to simultaneously process different substrates respectively; the first chamber and the second chamber both comprise: a shell, a substrate carrier and a reaction chamber cover plate, wherein the substrate carrier and the reaction chamber cover plate are both located inside the shell, and when the substrate carrier is located at the process position, a closed reaction chamber is formed between the reaction chamber cover plate and the substrate carrier, and the space inside the shell except the reaction chamber is a transmission chamber; the first chamber and the second chamber both comprise: an inner chamber air inlet pipeline, an inner chamber An air outlet pipe, an outer cavity air inlet pipe and an outer cavity air outlet pipe, the inner cavity air inlet pipe and the inner cavity air outlet pipe are both connected to the reaction chamber, and the outer cavity air inlet pipe and the outer cavity air outlet pipe are both connected to the transmission chamber; wherein the inner cavity air inlet pipe of the first cavity and the inner cavity air inlet pipe of the second cavity are both connected to the inner cavity total air inlet pipe, and the inner cavity air outlet pipe of the first cavity and the inner cavity air outlet pipe of the second cavity are both connected to the inner cavity total air outlet pipe; the outer cavity air inlet pipe of the first cavity and the outer cavity air inlet pipe of the second cavity are both connected to the outer cavity total air inlet pipe, and the outer cavity air outlet pipe of the first cavity and the outer cavity air outlet pipe of the second cavity are both connected to the outer cavity total air outlet pipe, wherein the outer cavity total air inlet pipe is connected to the outer cavity air inlet device.

[0005] In one embodiment of the present application, the inner cavity air inlet pipe includes a reaction source air inlet pipe and a purge air inlet pipe, the reaction source air inlet pipe of the first cavity and the reaction source air inlet pipe of the second cavity are connected to the same precursor transport device, and the purge air inlet pipe of the first cavity and the purge air inlet pipe of the second cavity are connected to the same gas supply device.

[0006] In one embodiment of the present application, a first flow controller is provided on the inner cavity main air intake pipeline, and an inner cavity air intake valve and a first regulating valve are provided on the inner cavity air intake pipeline.

[0007] In one embodiment of the present application, an inner cavity air outlet valve is provided on the inner cavity air outlet pipe, an inner cavity main air outlet valve and a butterfly valve are provided on the inner cavity main air outlet pipe, the inner cavity main air outlet pipe is connected to an exhaust pump, and a first pressure sensor is provided between the inner cavity main air outlet valve and the exhaust pump.

[0008] In one embodiment of the present application, a second flow controller is provided on the outer cavity main air intake pipeline, and an outer cavity air intake valve and a second regulating valve are provided on the outer cavity air intake pipeline.

[0009] In one embodiment of the present application, an external cavity air outlet valve is provided on the external cavity air outlet pipe, an external cavity main air outlet valve is provided on the external cavity main air outlet pipe, the external cavity main air outlet pipe is connected to an exhaust pump, and a second pressure sensor is provided between the external cavity main air outlet valve and the exhaust pump.

[0010] In one embodiment of the present application, the first chamber and the second chamber both include a mixing chamber and a diffusion chamber arranged above the reaction chamber cover plate, the reaction source air inlet pipe and the purge air inlet pipe are both connected to the mixing chamber, and the reaction chamber cover plate is provided with a rectifying air inlet on one side of the diffusion chamber, and the rectifying air inlet is used to allow gas to enter the reaction chamber from the diffusion chamber.

[0011] In one embodiment of the present application, the contour of the rectifying air inlet is adapted to the outer edge shape of the substrate.

[0012] In one embodiment of the present application, the rectifying air inlet includes a plurality of air holes.

[0013] In one embodiment of the present application, the contour of the rectifying air inlet includes a first section located in the middle and second sections located on both sides, wherein the pores located in the first section are smaller than the pores located in the second section, and / or the distribution density of the pores located in the first section is smaller than the distribution density of the pores located in the second section.

[0014] In one embodiment of the present application, the plurality of air holes are arranged in at least one row along the contour of the rectifying air inlet.

[0015] In one embodiment of the present application, the first cavity and the second cavity are configured as follows: the substrate carrier of the first cavity and the substrate carrier of the second cavity are driven to rise and fall synchronously by a lifting mechanism.

[0016] The dual-chamber system of the present application includes a first chamber and a second chamber with consistent structures, and the reaction chamber of the first chamber and the reaction chamber of the second chamber share a common inlet and outlet pipe, and the transmission chamber of the first chamber and the transmission chamber of the second chamber also share a common inlet and outlet pipe, so that the two chambers match in structure and inlet and outlet, so that the process performance of the two chambers matches, and can be used to simultaneously process and obtain two substrates with consistent performance, thereby improving production and yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0018] Figure 1 is a schematic structural diagram of a dual-chamber system according to an embodiment of the present application;

[0019] Figure 2 is an exemplary structural diagram of a dual-chamber system according to an embodiment of the present application;

[0020] Figure 3 is a cross-sectional schematic diagram of a partial structure of a dual-chamber system according to an embodiment of the present application;

[0021] Figure 4 It is a schematic diagram of the three-dimensional structure of a reaction chamber cover plate in a dual-chamber system in one embodiment of the present application.

[0022] Figure 5A to Figure 5G Schematic diagram of seven different embodiments of the rectifying air inlet on the reaction chamber cover plate of an embodiment of the present application. DETAILED DESCRIPTION

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0024] As shown in this application, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0025] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant field may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0026] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0027] At present, the ALD high-k film preparation equipment in the industry usually adopts a single-chamber design, and the yield is relatively low. The dual-chamber system of the present application adopts a dual-chamber design, and uses two chambers to process at least two substrates at the same time, which can improve the yield. In order to ensure that the dual chambers are highly matched in process performance, the first cavity and the second cavity of the present application have the same internal structure and a common air intake and exhaust structure, so that the air intake pressure of the dual cavities is matched, and the cavity pressure is also matched, so that the cavity process environment is matched.

[0028] Figure 1 and Figure 2 Both are exemplary structural diagrams of a dual-chamber system according to an embodiment of the present application. Both are used to represent the dual-chamber system 100 of the present application, but the representation methods are different. Figure 1 It is mainly used to show the internal structure of the first cavity 110 and the second cavity 120, and the connection relationship between the intake pipe and the exhaust pipe, etc. Figure 2 It is mainly used to indicate the control valves, flow meters, etc. installed on the intake and exhaust pipes. Figure 1 and Figure 2 They complement each other and are used together to illustrate the dual-chamber system 100 of the present application, wherein the same structures are numbered the same. Figure 1 and Figure 2 The dual chamber system 100 is described.

[0029] Combination Figure 1 and Figure 2 As shown, the dual-chamber system 100 includes a first chamber 110, a second chamber 120, an inner chamber total air inlet pipe 130, an inner chamber total air outlet pipe 140, an outer chamber total air inlet pipe 150 and an outer chamber total air outlet pipe 160, wherein the first chamber 110 and the second chamber 120 are used to process different substrates at the same time, specifically, each chamber is used to process one substrate. The first chamber 110 and the second chamber 120 have some common structures, which are described below.

[0030] The first chamber 110 includes: a housing 111, a substrate carrier 112 and a reaction chamber cover 113. The substrate carrier 112 and the reaction chamber cover 113 are both located inside the housing 111. When the substrate carrier 112 is located at the process position, a closed reaction chamber RC1 is formed between the reaction chamber cover 113 and the substrate carrier 112 (e.g., Figure 2 As shown in FIG. 1 , the space inside the housing 111 other than the reaction chamber RC1 is the transmission chamber VC1 (as shown in FIG. Figure 2 It should be noted that Figure 1 In the figure, the substrate carrier 112 has not yet reached the process position, and its process position is higher than the position shown in the figure, and the substrate carrier 112 is in contact with the partition 114 when it is in the process position, so that a closed reaction chamber is formed by the reaction chamber cover 113, the partition 114 and the substrate carrier 112.

[0031] The second chamber 120 includes: a housing 121, a substrate carrier 122 and a reaction chamber cover plate 123. The substrate carrier 122 and the reaction chamber cover plate 123 are both located inside the housing 121. When the substrate carrier 122 is located at the process position, a closed reaction chamber RC2 is formed between the reaction chamber cover plate 123 and the substrate carrier 122 (such as Figure 2 The space inside the housing 121 except the reaction chamber RC2 is the transmission chamber VC2 (as shown in FIG. Figure 2 shown). Figure 2 The reaction chambers RC1 and RC2 shown are both closed chambers. It should be noted that when forming a closed chamber, the substrate carriers 112 and 122 may be located at a process position or not. Sometimes, according to process requirements, the process position may be an incompletely closed chamber.

[0032] The present application does not limit how the substrate carriers 112 and 122 are raised or lowered. Figure 1 As shown, support shafts 115 and 125 are respectively provided below the substrate carriers 112 and 122 for supporting and rotating the substrate carriers 112 and 122. The substrate carriers 112 and 122 can be connected to an external lifting mechanism through the support shafts 115 and 125, and perform synchronous lifting motion under the drive of the lifting mechanism, so that the heights of the substrate carriers 112 and 122 in their respective cavities are always consistent.

[0033] Combination Figure 1 and Figure 2As shown, the first cavity 110 also includes an inner cavity air inlet pipe 131, an inner cavity air outlet pipe 141, an outer cavity air inlet pipe 151 and an outer cavity air outlet pipe 161. The inner cavity air inlet pipe 131 and the inner cavity air outlet pipe 141 are both connected to the reaction chamber RC1 of the first cavity 110, and the outer cavity air inlet pipe 151 and the outer cavity air outlet pipe 161 are both connected to the transmission chamber VC1 of the first cavity 110. From the positional relationship, the transmission chamber (also called the vacuum chamber) occupies a larger space inside the shell 111, and the reaction chamber is inside the transmission chamber. Therefore, the reaction chamber (RC) can also be called the inner chamber, and the transmission chamber (VC) can be called the outer chamber. According to the present application, the "inner cavity" and "outer cavity" in the names related to the air inlet pipe and the air outlet pipe correspond to the "reaction chamber" and the "transmission chamber" respectively.

[0034] Similarly, the second cavity 120 also includes: an inner cavity air inlet pipe 132, an inner cavity air outlet pipe 142, an outer cavity air inlet pipe 152 and an outer cavity air outlet pipe 162. The inner cavity air inlet pipe 132 and the inner cavity air outlet pipe 142 are both connected to the reaction chamber RC2 of the second cavity 120, and the outer cavity air inlet pipe 152 and the outer cavity air outlet pipe 162 are both connected to the transmission chamber VC2 of the second cavity 120.

[0035] Further, the inner cavity air inlet pipe 131 of the first cavity 110 and the inner cavity air inlet pipe 132 of the second cavity 120 are both connected to the inner cavity total air inlet pipe 130, and the inner cavity air outlet pipe 141 of the first cavity 110 and the inner cavity air outlet pipe 142 of the second cavity 120 are both connected to the inner cavity total air outlet pipe 140; the outer cavity air inlet pipe 151 of the first cavity 110 and the outer cavity air inlet pipe 152 of the second cavity 120 are both connected to the outer cavity total air inlet pipe 150, and the outer cavity air outlet pipe 161 of the first cavity 110 and the outer cavity air outlet pipe 162 of the second cavity 120 are both connected to the outer cavity total air outlet pipe 160, wherein the outer cavity total air inlet pipe 150 is connected to the outer cavity air inlet device 171.

[0036] According to the dual-chamber system 100 of the present application, the inner cavity air inlet pipes 131 and the inner cavity air inlet pipes 132 of the reaction chambers RC1 and RC2 are connected to the same inner cavity total air inlet pipe 130, and the inner cavity air outlet pipes 141 and the inner cavity air outlet pipes 142 are connected to the same inner cavity total air outlet pipe 140, thereby realizing the shared inlet and outlet of the reaction chambers RC1 and RC2; the outer cavity air inlet pipes 151 and the outer cavity air inlet pipes 152 of the transmission chambers VC1 and VC2 are connected to the same outer cavity total air outlet pipe 140. The air inlet pipe 150, the outer cavity air outlet pipe 161 and the outer cavity air outlet pipe 162 are all connected to the same outer cavity main air outlet pipe 160, thereby realizing the shared air inlet and outlet of the transfer chambers VC1 and VC2. From an overall perspective, the shared air inlet and outlet of the first cavity 110 and the second cavity 120 are realized, so that the two cavities can achieve matching of the air inlet and outlet, and the two cavities have a mutually matching gas environment, which is conducive to achieving the matching of the two chambers in processing substrates and improving the yield and output of the substrates.

[0037] Further, in Figure 1 In the embodiment shown, the inner cavity air inlet pipeline includes two pipelines, namely, the reaction source air inlet pipeline and the purge air inlet pipeline. Figure 1 As shown, the inner cavity air inlet pipeline 131 of the first cavity 110 includes a reaction source air inlet pipeline 131a and a purge air inlet pipeline 131b, and the inner cavity air inlet pipeline 132 of the second cavity 120 includes a reaction source air inlet pipeline 132a and a purge air inlet pipeline 132b. The reaction source air inlet pipeline 131a of the first cavity 110 and the reaction source air inlet pipeline 132a of the second cavity 120 are connected to the same precursor transport device 180, and the purge air inlet pipeline 131b of the first cavity 110 and the purge air inlet pipeline 132b of the second cavity 120 are connected to the same gas supply device 181. The precursor transport device 180 is used to provide reaction source gas. When performing the ALD high-k dielectric film forming process, the solid precursor is, for example, HfCl4 (hafnium tetrachloride), which has a low saturated vapor pressure, and therefore needs to be heated at a high temperature to increase its saturated vapor pressure. The gas supply device 181 can be used to provide carrier gas of the reaction source gas to the precursor transport device 180, and can also provide purge gas for purging the reaction chambers of the first chamber 110 and the second chamber 120. The carrier gas or purge gas can be argon, nitrogen or helium.

[0038] like Figure 1As shown, at least one precursor source bottle 182 is provided in the precursor transport device 180 for loading the solid precursor. Specifically, the precursor source bottle 182 can be a steel cylinder, which has good thermal conductivity. The precursor transport device 180 can also include a heating device 183, which is arranged around the precursor source bottle 182 and is used to heat the precursor source bottle 182. In this embodiment, the same precursor source bottle 182 is used to provide reaction source gas to the reaction chamber RC1 of the first cavity 110 and the reaction chamber RC2 of the second cavity 120. In these embodiments, the heating device 183 is used to heat the precursor source bottle 182 to (for example, HfCl4) greater than 200 degrees Celsius to increase the saturated vapor pressure of the solid precursor so that it is suitable for simultaneously providing reaction source gas to the first cavity 110 and the second cavity 120.

[0039] In some cases, the solid precursor may include two solid sources, such as HfCl4 and ZrCl4, etc., for achieving the deposition of HfZrO thin film. The precursor transport device 180 may include two precursor source bottles 182, and the two source bottles may share carrier gas and pressure relief. In one example, one precursor source bottle 180 may correspond to one solid precursor, so that a double-bottle double solid source may be configured for the first cavity 110 and the second cavity 120, which may increase the service life of the solid source.

[0040] The heating device 183 can be specifically implemented as a heating wire, for example, arranged above and below the precursor source bottle 182, for heating the precursor source bottle 182. The arrangement of the heating wire is not limited to a specific position, so that the precursor source bottle 182 is evenly heated. By controlling the heating device 183, one or more precursor source bottles 182 can be heated at the same time, so that the reaction gas supplied to the first cavity 110 and / or the second cavity 120 has the same temperature.

[0041] The dual-chamber system 100 may further include a plurality of heating units disposed on the chamber to heat the chamber. Figure 1 As shown, it includes a heating unit 1841 disposed on the bottom surface of the upper cover plate 101 facing the inside of the cavity, and a heating unit 1842 disposed at the bottom of the cavity. By controlling the heating units 1841 and 1842 of the cavity, the two cavities can be kept at the same temperature, which is conducive to achieving the same process performance of the two cavities.

[0042] Combination Figure 1 and Figure 2As shown, the reaction source air inlet pipeline 131a, the purge air inlet pipeline 131b, the reaction source air inlet pipeline 132a and the purge air inlet pipeline 132b are all directly or indirectly connected to the precursor transport device 180. The precursor transport device 180 can be equivalent to the inner cavity total air inlet pipeline 130 of the dual-chamber system 100, or two inner cavity total air inlet pipelines connected to the precursor transport device 180 are arranged, so that the reaction source air inlet pipeline 131a and the reaction source air inlet pipeline 132a are connected to one of the inner cavity total air inlet pipelines, and the purge air inlet pipeline 131b and the purge air inlet pipeline 132b are connected to the other inner cavity total air inlet pipeline, etc. The present application does not impose any restrictions on this, as long as the dual-chamber common air intake can be achieved.

[0043] refer to Figure 2 As shown, a first flow controller MFC1 is provided on the inner cavity total air intake pipeline 130, an inner cavity air intake valve 211 and a first regulating valve 212 are provided on the inner cavity air intake pipeline 131 of the first cavity 110, and an inner cavity air intake valve 221 and a first regulating valve 222 are provided on the inner cavity air intake pipeline 132 of the second cavity 120. Among them, the first flow controller MFC1 can be connected to the gas source to control the flow of gas entering the total air intake pipeline 130. The inner cavity air intake valves 211 and 221 can be pneumatic valves for opening or closing the pipeline, and the first regulating valves 212 and 222 can be needle valves, and the flow of the pipeline can be controlled by the controller opening.

[0044] Combination Figure 1 and Figure 2 The inner cavity outlet pipe 141 of the first cavity 110 is provided with an inner cavity outlet valve 213, the inner cavity outlet pipe 142 of the second cavity 120 is provided with an inner cavity outlet valve 223, and the inner cavity main outlet pipe 140 is provided with an inner cavity main outlet valve 231 (shown in FIG. Figure 1 in) and butterfly valve 233 (shown in Figure 2 ), the inner cavity main outlet pipe 140 is connected to the exhaust pump 172, and a first pressure sensor PT1 is provided between the inner cavity main outlet valve 231 and the exhaust pump 172. The first pressure sensor PT1 is used to sense the pressure of the inner cavity RC. Figure 2 The butterfly valve 233 is disposed between the first pressure sensor PT1 and the exhaust pump 172. In the application process, the butterfly valve 233 can be set in a position mode, and its opening degree is set according to experience, so that its opening degree is fixed.

[0045] like Figure 2As shown, the second flow controller MFC2 is provided on the outer cavity main air intake pipe 150, the outer cavity air intake valve 214 and the second regulating valve 215 are provided on the outer cavity air intake pipe 151 of the first cavity 110, and the outer cavity air intake valve 224 and the second regulating valve 225 are provided on the outer cavity air intake pipe 152 of the second cavity 120. The second flow controller MFC2 can be provided separately or integrated in Figure 1 In the outer cavity air intake device 171 shown in . Similar to the inner cavity, the outer cavity air intake valve 214, 224 can be a pneumatic valve for opening or closing the pipeline, and the second regulating valve 215, 225 can be a needle valve, and the flow rate of the pipeline can be controlled by the controller opening.

[0046] Combination Figure 1 and Figure 2 The outer cavity outlet pipe 161 of the first cavity 110 is provided with an outer cavity outlet valve 216, the outer cavity outlet pipe 162 of the second cavity 120 is provided with an outer cavity outlet valve 226, and the outer cavity main outlet pipe 160 is provided with an outer cavity main outlet valve 232 (shown in FIG. Figure 1 ), the outer cavity main gas outlet pipe 160 is connected to the exhaust pump 172, and a second pressure sensor PT2 is provided between the outer cavity main gas outlet valve 232 and the exhaust pump 172. The second pressure sensor PT2 is used to sense the pressure of the outer cavity VC.

[0047] In some embodiments, the exhaust pump 172 may be a vacuum pump.

[0048] like Figure 1 and Figure 2 As shown, in order to simultaneously carry out the process of preparing a high-k dielectric film in dual chambers, from a positional point of view, the corresponding pipelines of the first chamber 110 and the second chamber 120 are symmetrically arranged, and the pipeline paths can be arranged to be completely identical, so that the gases entering or exhausting the first chamber 110 and the second chamber 120 can pass through the same path, thereby ensuring the matching of the gas pressure environments inside the first chamber 110 and the second chamber 120.

[0049] It should be noted that the inner cavity main air intake pipeline 130 and the outer cavity main air intake pipeline 150 are not limited to one, and can also be multiple, for transmitting different types of gases. When there are multiple inner cavity main air intake pipelines 130 and outer cavity main air intake pipelines 150, their numbers are the same.

[0050] It should be noted that in some cases, before or after the semiconductor process, the inlet valve, outlet valve and regulating valve described above can be used, combined with the sensing results of the pressure sensor, to adjust the first cavity 110 and the second cavity 120 so that the pressures of the two are matched under preset test conditions.

[0051] refer to Figure 1As shown, the first chamber 110 further includes a mixing chamber 311 and a diffusion chamber 312 disposed above the reaction chamber cover plate 113, and the reaction source air inlet pipe 131a and the purge air inlet pipe 131b are both connected to the mixing chamber 311. After the gas is mixed in the mixing chamber 312, it flows to the diffusion chamber 312 and then enters the reaction chamber RC1 of the first chamber 110. The second chamber 120 further includes a mixing chamber 321 and a diffusion chamber 322 disposed above the reaction chamber cover plate 123, and the reaction source air inlet pipe 132a and the purge air inlet pipe 132b are both connected to the mixing chamber 321. After the gas is mixed in the mixing chamber 321, it flows to the diffusion chamber 322 and then enters the reaction chamber RC2 of the second chamber 120.

[0052] Figure 3 1 is a cross-sectional schematic diagram of a local structure in a dual-chamber system of an embodiment of the present application. The local structure takes the first chamber 110 as an example, mainly including a substrate carrier 112 and a reaction chamber cover plate 113 in the first chamber 110, and is used to illustrate structures such as a mixing chamber 311, a diffusion chamber 312, and a rectifying air inlet 313. Figure 3 The corresponding description is also used to describe the second cavity, and it can be understood that the structures of the two cavities are identical. Figure 3 It is shown that the substrate carrier 112 has reached the process position, and a reaction chamber RC1 is formed between the substrate carrier 112 and the reaction chamber cover plate 113 .

[0053] refer to Figure 3 The reaction source air inlet pipe 131a and the purge air inlet pipe 131b are both connected to the mixing chamber 311, and the gases are mixed in the mixing chamber 311 and then flow to the diffusion chamber 312. The mixing chamber 311 and the diffusion chamber 312 are arranged in sequence along the air inlet direction.

[0054] like Figure 3 As shown, the reaction chamber cover plate 113 is a plate with a certain thickness, having an upper surface 113a and a lower surface 113b. In some embodiments, the contour of the rectifying air inlet 313 is adapted to the outer edge shape of the substrate W. For example, when the substrate W is a circular wafer, the contour of the rectifying air inlet 313 is set to a circular arc shape corresponding to the outer edge of the substrate W.

[0055] Figure 4 1 is a schematic diagram of the three-dimensional structure of the reaction chamber cover plate 113. Figure 4 As shown, the rectifying air inlet 313 is an arc-shaped opening. Figure 3 and Figure 4As shown, the upper surface 113a of the reaction chamber cover plate 113 also has a downwardly inclined slope 113c near the rectifying air inlet 313, and the lower surface 113b of the reaction chamber cover plate 113 also has an upwardly inclined slope 113d near the rectifying air inlet 313. The inclined surfaces 113c and 113d are provided to facilitate the gas to flow downward from the upper surface 113a, and to be guided to the top of the substrate W again through the inclined surface 113d after passing through the rectifying air inlet 313. When the substrate W is not circular, the contour of the rectifying air inlet 313 is correspondingly provided according to the outer edge shape of the substrate W.

[0056] Combination Figure 3 and Figure 4 As shown, it can be understood that the diffusion chamber 312 is roughly fan-shaped, which is conducive to the diffusion of gas.

[0057] The present application provides a reaction chamber cover plate 113 with a rectifying gas inlet 313, which is beneficial for providing gas to the substrate W more evenly and for improving the uniformity of film formation.

[0058] In order to make more detailed adjustments to the gas entering the reaction chamber to improve the uniformity of film formation, in some embodiments, the rectifying air inlet 313 includes a plurality of air holes. In some embodiments, the rectifying air inlet 313 is a plurality of air holes, and the overall contour of the plurality of air holes is an arc shape that matches the outer edge of the substrate, and each air hole is a through hole that penetrates the reaction chamber cover plate 113 along the thickness direction of the reaction chamber cover plate 113. The present application does not limit the specific shape of the air hole, and the air hole can be a square hole, a round hole, an irregularly shaped hole, etc.

[0059] exist Figure 5A to Figure 5G In the embodiment shown, the rectifying air inlet 313 includes a plurality of air holes. Figure 5A , the rectifying air inlet 313 is divided into a first section M1 located in the middle and second sections E1 and E2 located on both sides. It should be noted that, Figure 5A The division shown is only an example, and the first segment M1 and the second segments E1 and E2 each include at least one pore.

[0060] exist Figure 5A In the embodiment shown, a plurality of air holes 510 are evenly spaced along the contour of the rectifying air inlet 313, and each air hole 510 has the same size and shape. According to this embodiment, uniform gas can be provided to the reaction chamber corresponding to the rectifying air inlet 313.

[0061] exist Figure 5BIn the embodiment shown, a plurality of air holes 510 are evenly spaced along the contour of the rectifying air inlet 313, the air holes 521 located in the first section M1 are smaller, and the air holes 522 located in the second sections E1 and E2 are larger. In one embodiment, the diameter of the air holes 522 gradually increases toward the edge. According to such an arrangement, the gas flow rate flowing through the first section M1 can be smaller than the gas flow rate flowing through the second sections E1 and E2.

[0062] exist Figure 5C In the embodiment shown, the distribution density of the plurality of pores 531 located in the first segment M1 is relatively small, i.e., relatively sparse, and the distribution density of the plurality of pores 532 located in the second segments E1 and E2 is relatively large, i.e., relatively dense. According to such a configuration, the gas flow rate flowing through the first segment M1 can be made smaller than the gas flow rate flowing through the second segments E1 and E2.

[0063] exist Figure 5D In the illustrated embodiment, the plurality of air holes 541 may be arranged in two rows along the contour of the rectifying air inlet 313. At the same time, each air hole 541 is evenly spaced, and the air holes 541 in adjacent rows may also be staggered. Such an arrangement expands the ventilation area and the uniformity of air intake.

[0064] exist Figure 5E In the illustrated embodiment, the plurality of air holes 550 are all square holes and are evenly spaced apart, and each of the air holes 550 is equal in size and shape.

[0065] exist Fig. 5F In the illustrated embodiment, the plurality of air holes 561 , 562 are all square holes, the air holes 561 located in the first segment M1 are relatively small, and the air holes 562 located in the second segments E1 , E2 are relatively large.

[0066] exist Figure 5G In the illustrated embodiment, the plurality of air holes 571 , 572 are all square holes, the distribution density of the air holes 571 located in the first segment M1 is relatively high, and the distribution density of the air holes 572 located in the second segments E1 , E2 is relatively high.

[0067] By making the rectifying air inlet 313 include a plurality of pores, the present application can flexibly set the distribution of the pores, thereby effectively rectifying the gas entering the reaction chamber, and can obtain the pore distribution pattern most suitable for the current process through experiments, thereby improving the uniformity, yield and efficiency of film formation, and these solutions are all included in the protection scope of the present application.

[0068] The basic concepts have been described above. Obviously, for those skilled in the art, the above application disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0069] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0070] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in this application are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining the digits. Although the numerical domains and parameters used to confirm the breadth of the range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

Claims

1. A mutually matched dual-chamber system for preparing a high-k dielectric film, characterized in that: include: The first cavity, the second cavity, the inner cavity main air inlet pipe, the inner cavity main air outlet pipe, the outer cavity main air inlet pipe and the outer cavity main air outlet pipe, wherein: The first chamber and the second chamber are used to process different substrates respectively at the same time; The first chamber and the second chamber both comprise: a shell, a substrate carrier and a reaction chamber cover plate, wherein the substrate carrier and the reaction chamber cover plate are both located inside the shell, when the substrate carrier is located at the process position, a closed reaction chamber is formed between the reaction chamber cover plate and the substrate carrier, and the space inside the shell except the reaction chamber is a transfer chamber; The first cavity and the second cavity further include: an inner cavity air inlet pipe, an inner cavity air outlet pipe, an outer cavity air inlet pipe and an outer cavity air outlet pipe, the inner cavity air inlet pipe and the inner cavity air outlet pipe are both connected to the reaction chamber, and the outer cavity air inlet pipe and the outer cavity air outlet pipe are both connected to the transmission chamber; wherein, The inner cavity air inlet pipe of the first cavity and the inner cavity air inlet pipe of the second cavity are both connected to the inner cavity total air inlet pipe, and the inner cavity air outlet pipe of the first cavity and the inner cavity air outlet pipe of the second cavity are both connected to the inner cavity total air outlet pipe; the outer cavity air inlet pipe of the first cavity and the outer cavity air inlet pipe of the second cavity are both connected to the outer cavity total air inlet pipe, and the outer cavity air outlet pipe of the first cavity and the outer cavity air outlet pipe of the second cavity are both connected to the outer cavity total air outlet pipe, wherein the outer cavity total air inlet pipe is connected to the outer cavity air inlet device.

2. The dual chamber system according to claim 1, characterized in that: The inner cavity air inlet pipeline includes a reaction source air inlet pipeline and a purge air inlet pipeline. The reaction source air inlet pipeline of the first cavity and the reaction source air inlet pipeline of the second cavity are connected to the same precursor transport device, and the purge air inlet pipeline of the first cavity and the purge air inlet pipeline of the second cavity are connected to the same gas supply device.

3. The dual chamber system according to claim 1, characterized in that: The inner cavity main air intake pipeline is provided with a first flow controller, and the inner cavity air intake pipeline is provided with an inner cavity air intake valve and a first regulating valve.

4. The dual chamber system according to claim 1, characterized in that: The inner cavity air outlet pipe is provided with an inner cavity air outlet valve, the inner cavity main air outlet pipe is provided with an inner cavity main air outlet valve and a butterfly valve, the inner cavity main air outlet pipe is connected to an exhaust pump, and a first pressure sensor is provided between the inner cavity main air outlet valve and the exhaust pump.

5. The dual chamber system according to claim 1, characterized in that: The outer cavity main air intake pipeline is provided with a second flow controller, and the outer cavity air intake pipeline is provided with an outer cavity air intake valve and a second regulating valve.

6. The dual chamber system according to claim 1, characterized in that: An outer cavity air outlet valve is arranged on the outer cavity air outlet pipe, an outer cavity main air outlet valve is arranged on the outer cavity main air outlet pipe, the outer cavity main air outlet pipe is connected to the exhaust pump, and a second pressure sensor is arranged between the outer cavity main air outlet valve and the exhaust pump.

7. The dual chamber system according to claim 2, characterized in that: The first chamber and the second chamber both include a mixing chamber and a diffusion chamber arranged above the reaction chamber cover plate, the reaction source air inlet pipe and the purge air inlet pipe are both connected to the mixing chamber, and the reaction chamber cover plate is provided with a rectifying air inlet on one side of the diffusion chamber, and the rectifying air inlet is used to allow gas to enter the reaction chamber from the diffusion chamber.

8. The dual chamber system according to claim 7, characterized in that: The contour of the rectifying air inlet is matched with the outer edge shape of the substrate.

9. The dual chamber system according to claim 7, characterized in that: The rectifying air inlet includes a plurality of air holes.

10. The dual chamber system according to claim 9, characterized in that: The profile of the rectifying air inlet includes a first section located in the middle and second sections located on both sides, wherein the pores located in the first section are smaller than the pores located in the second section, and / or the distribution density of the pores located in the first section is smaller than the distribution density of the pores located in the second section.

11. The dual chamber system according to claim 9, characterized in that: The plurality of air holes are arranged in at least one row along the contour of the rectifying air inlet.

12. The dual chamber system according to claim 1, characterized in that: The first cavity and the second cavity are configured such that the substrate carrier of the first cavity and the substrate carrier of the second cavity are driven to rise and fall synchronously by a lifting mechanism.

Images