MEMS sensor and electronic atomization device
By introducing a deformed material layer into the MEMS sensor and deforming it when powered on to compensate for the deflection of the strain film, the problem of inaccurate detection of the traditional MEMS piezoresistive pressure sensor is solved, and the detection accuracy and linearity are improved.
Patent Information
- Application Number
- CN202421642151.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-11
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2034-07-11
AI Technical Summary
The traditional MEMS piezoresistive pressure sensor has the problem of inaccurate detection. The deflection of the strain film increases and the linearity becomes worse, resulting in poor linearity of the test results.
The deformed material layer is used to compensate for the deflection of the strained film, and the deformation layer is deformed when it is powered on, thereby applying a force close to or away from the substrate to the bottom wall of the groove, thereby offsetting the strained film displacement caused by changes in air flow and the like.
It effectively improves the problem that the deformation of the substrate will not change ideally linearly with the pressure, improves the detection accuracy of the MEMS sensor, and makes the deflection of the strain film smaller and has higher linearity.
Smart Images
Figure CN222774173U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of sensor technology, and in particular to a MEMS sensor and an electronic atomization device. Background Art
[0002] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, MEMS technology has been widely used in the field of sensors. Traditional MEMS piezoresistive pressure sensors are based on the single-crystal silicon piezoresistive effect and usually use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. By measuring the value of the electrical signal, the size of the external pressure signal can be known. However, this type of MEMS piezoresistive pressure sensor has the problem of inaccurate detection. Utility Model Content
[0003] The present application provides a MEMS sensor and an electronic atomization device, which are used to solve the problem of inaccurate detection of MEMS sensors.
[0004] According to the first aspect of the present application, some embodiments of the present application provide a MEMS sensor, including a substrate, a baseplate, a deformable material layer, a first conductive contact and a second conductive contact; the substrate has a first surface and a second surface relative to each other; the first surface has a groove, the second surface has a Wheatstone bridge circuit, and the bridge arm of the Wheatstone bridge circuit includes a varistor; the substrate covers the groove to form a sealed cavity; the deformable material layer is arranged in the sealed cavity and located on the bottom wall of the groove; the first conductive contact and the second conductive contact are arranged at intervals on the substrate and / or the baseplate, and are electrically connected to the deformable material layer respectively; wherein the deformable material layer is configured to be able to deform when power is supplied, thereby applying a force to the bottom wall of the groove to move closer to or away from the substrate.
[0005] In some embodiments, the deformable material layer is spaced apart from the substrate; the deformable material layer includes a thermo-deformable material layer or an electro-deformable material layer.
[0006] In some embodiments, the thermodeformable material layer or the electrodeformable material layer is conductive and is electrically connected to the first conductive contact and the second conductive contact.
[0007] In some embodiments, the deformable material layer includes the thermo-deformable material layer and a conductive heating layer; the conductive heating layer is electrically connected to the first conductive contact and the second conductive contact respectively.
[0008] In some embodiments, the conductive heat-generating layer and the thermo-deformable material layer are stacked, or the conductive heat-generating layer surrounds the thermo-deformable material layer.
[0009] In some embodiments, the deformation material layer includes a plurality of first sub-deformation material layers and a plurality of second sub-deformation material layers arranged at intervals; the plurality of first sub-deformation material layers and the plurality of second sub-deformation material layers are arranged alternately; the first sub-deformation material layer and the second sub-deformation material layer apply forces to the bottom wall of the groove in opposite directions when power is supplied, and are independently controlled by two different pairs of the first conductive contacts and the second conductive contacts.
[0010] In some of the embodiments, the deformable material layer is conductive and is spaced apart from the substrate to serve as a first electrode plate; the MEMS sensor also includes a third conductive contact and a second electrode plate; the third conductive contact is disposed on the substrate and / or the substrate; the second electrode plate is disposed on the surface of the substrate exposed to the sealed cavity, is spaced apart from the first electrode plate, and is electrically connected to the third conductive contact; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when power is supplied.
[0011] In some embodiments, the substrate has a first conductive hole and a second conductive hole; the first conductive contact is arranged on the surface of the substrate facing away from the substrate and is electrically connected to the deformable material layer through the first conductive hole, and the second conductive contact is arranged on the surface of the substrate facing away from the substrate and is electrically connected to the deformable material layer through the second conductive hole.
[0012] In some of the embodiments, the Wheatstone bridge circuit includes four groups of piezoresistors, which produce resistance changes in response to pressure changes applied to the substrate, thereby converting pressure signals into electrical signals; the Wheatstone bridge circuit also includes four groups of conductive areas for leading out the electrical signals.
[0013] In some of the embodiments, the substrate is a semiconductor substrate; each group of the varistors includes two sub-varistors that are arranged in parallel and at intervals, and a heavily doped contact region formed between the sub-varistors, and the heavily doped contact region is used to electrically connect the sub-varistors in the group of the varistors.
[0014] In some of the embodiments, the varistor and the heavily doped contact region are formed on the substrate, the substrate is further covered with a dielectric layer, and the four groups of conductive regions are formed on the dielectric layer.
[0015] In some of the embodiments, a side of the dielectric layer away from the substrate is further covered with a passivation layer, and the four groups of conductive regions are respectively at least partially exposed from the passivation layer.
[0016] According to the second aspect of the present application, some embodiments of the present application provide an electronic atomization device, including a liquid storage unit, an atomization component, a MEMS sensor, a power supply and a control circuit; the liquid storage unit is used to store an aerosol generating matrix, and the liquid storage unit has an aerosol inlet end and an outlet end; the atomization component is arranged on the airflow path from the inlet end to the outlet end, and is used to atomize the aerosol generating matrix; the MEMS sensor is the MEMS sensor provided in any of the above embodiments; the MEMS sensor is arranged on the airflow channel of the electronic atomization device, and is used to detect the air pressure change in the airflow channel; the power supply is used to provide voltage to the atomization component and the MEMS sensor; the control circuit is electrically connected to the power supply, the atomization component and the MEMS sensor respectively; the control circuit is used to control the power supply to apply an electrical signal to the deformable material layer according to the change in output voltage caused by the change in air pressure in the airflow channel of the MEMS sensor, so that the deformable material layer applies a force to the bottom wall of the groove to move closer to or away from the substrate, so that the change in the output voltage of the MEMS sensor is less than or equal to a preset threshold.
[0017] In some embodiments, the preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when it is detected that the change in the output voltage of the MEMS sensor is zero, determine the magnitude of the air pressure based on the electrical signal applied to the deformable material layer.
[0018] According to the MEMS sensor of the above embodiment, since the deformable material layer is configured to be deformable when powered on, thereby applying a force to the bottom wall of the groove that is close to or away from the substrate, when the substrate of the sensor is subjected to pressure in a direction close to the substrate, the deformable material layer can be energized to cause the deformable material layer to deform away from the substrate, thereby applying a force to the bottom wall of the groove that is away from the substrate, thereby offsetting the displacement of the strain film in a direction close to the substrate caused by changes such as airflow; when the substrate of the sensor is subjected to pressure in a direction away from the substrate, the deformable material layer can be energized to cause the deformable material layer to deform close to the substrate, thereby applying a force to the bottom wall of the groove that is close to the substrate, thereby offsetting the displacement of the strain film in a direction away from the substrate caused by changes such as airflow; therefore, in the process of using the MEMS sensor, the deflection of the strain film is always small, thereby greatly improving the problem that the deformation of the substrate does not change ideally linearly with the pressure, thereby improving the detection accuracy of the MEMS sensor of the embodiment. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0020] Figure 1 A top view of a MEMS sensor provided in some embodiments of the present application;
[0021] Figure 2 for Figure 1 Schematic diagram of the cross section along line II-II;
[0022] Figure 3 A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;
[0023] Figure 4 for Figure 3 Schematic diagram of the bottom surface of the MEMS sensor;
[0024] Figure 5 A schematic diagram of the structure of a MEMS sensor provided in some embodiments of the present application;
[0025] Figure 6 A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;
[0026] Figure 7 for Figure 6 A bottom view of the medium deformation material layer 30;
[0027] Figure 8 A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;
[0028] Fig. 9 for Figure 8 A bottom view of the medium deformation material layer 30;
[0029] Fig.10 A flowchart of a method for preparing a MEMS sensor provided in some embodiments of the present application;
[0030] Fig.11 for Fig.10 Flowchart of S10;
[0031] Fig.12 for Fig.10 Flowchart of S30;
[0032] Fig.13 A flowchart of a method for preparing a MEMS sensor provided in some other embodiments of the present application;
[0033] Fig.14 A schematic diagram of the structure of an electronic atomization device provided in some embodiments of the present application;
[0034] Fig.15 for Fig.14 Functional module diagram of the electronic atomization device.
[0035] Description of Figure Numbers:
[0036] 10-substrate, 11-first surface, 12-second surface, 13-groove, 14-Wheatstone bridge circuit, 140-varistor, 141-sub-varistor, 142-conductive area, 143-heavily doped contact area, 144-conductive lead, 15-dielectric layer, 16-passivation layer; 20-substrate, 21-first conductive hole, 22-second conductive hole, 23-third conductive hole; 30-deformable material layer, 31-first lead, 32-second lead, 33-thermo-deformable material Material layer, 34-conductive heating layer, 35-first sub-deformable material layer, 36 multiple second sub-deformable material layers; 40-first conductive contact; 50-second conductive contact; 60-third conductive contact; 70-second electrode plate; 80-first sealing ring; 90-second sealing ring; 100-MEMS sensor; 200-liquid storage component; 300-atomization component; 400-control circuit; 1000A-liquid storage unit, 1000B-control unit, 1000-electronic atomization device. DETAILED DESCRIPTION
[0037] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.
[0039] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0040] In the description of the embodiments of the present application, the technical terms "first", "second", "third", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two (including two), such as two, three, etc., unless otherwise clearly and specifically defined, and similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).
[0041] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.
[0042] In the description of the embodiments of the present application, the orientation or position relationship indicated by technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the relative orientation or position relationship between the components in a certain specific posture (as shown in the drawings) shown in the drawings. They are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.
[0043] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.
[0044] In recent years, with the rapid development of MEMS technology, MEMS technology has been widely used in the field of sensors. Traditional MEMS sensors are based on the single crystal silicon piezoresistive effect and usually use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals, and measure the value of the electrical signal to obtain the size of the external pressure signal.
[0045] However, the inventors of the present application discovered through research that as the external pressure increases, the displacement (or "deformation") of the strain membrane in the sensor structure will not always show an ideal linear change, causing the resistance value of the bridge arm of the Wheatstone bridge to not always change linearly, that is, the deflection of the strain membrane increases and the linearity deteriorates, which in turn leads to poor linearity of the test results. This type of MEMS sensor has the problem of inaccurate detection.
[0046] The inventors of the present application use a deformable material layer to compensate for the deflection of the strain film, which effectively improves the problem that the deformation of the substrate does not change in an ideal linear manner with the pressure, thereby improving the detection accuracy of the MEMS sensor of the embodiment.
[0047] The present application is described in detail below with reference to the accompanying drawings and embodiments.
[0048] Please refer to Figure 1 and Figure 2 , Figure 1 A top view of a MEMS sensor provided in some embodiments of the present application; Figure 2 for Figure 1 Schematic diagram of the cross section along line II-II.
[0049] The MEMS sensor 100 provided in the embodiment of the present application includes a substrate 10 , a base plate 20 , a deformation material layer 30 , a first conductive contact 40 , and a second conductive contact 50 .
[0050] In one embodiment, the material of the substrate 10 can be a silicon-based material, such as a single crystal silicon wafer, which is a common semiconductor device substrate, on which a metal layer can be deposited and metal ions can be doped to construct a semiconductor device. In another embodiment, the MEMS sensor 100 needs to have a rollable property. In this case, polyacetamide (PI) can be selected as the substrate 10 substrate, and then a single crystal silicon layer is deposited thereon to prepare a rollable MEMS sensor 100. The embodiment of the present application is introduced by taking the substrate 10 as a semiconductor substrate 10 as an example.
[0051] In some embodiments, the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. The first surface 11 has a groove 13, and the cross-sectional shape of the groove 13 along the thickness direction of the substrate 10 is not limited, for example, it can be a square, a rectangle or a trapezoid, etc., and the present application does not make specific restrictions on this. The second surface 12 has a Wheatstone bridge circuit 14, and the bridge arm of the Wheatstone bridge circuit 14 includes a varistor 140.
[0052] In some embodiments, see Figure 1 The Wheatstone bridge circuit 14 includes four groups of varistors 140. The varistors 140 can generate resistance changes in response to pressure changes on the substrate 10, thereby converting pressure signals into electrical signals. Each group of varistors 140 includes two parallel and spaced sub-varistors 141. In one embodiment, the four groups of varistors 140 are arranged in the same direction, for example Figure 1 In the X direction, and distributed in Figure 1 In another embodiment, the four groups of varistors 140 are arranged in different directions. For example, two groups of varistors 140 are arranged in different directions. Figure 1 The other two groups of varistors 140 are arranged along the Y direction. Optionally, in another embodiment, the four groups of varistors 140 are arranged in a rectangular shape (not shown), and the arrangement directions of the four groups of varistors 140 are consistent.
[0053] In some embodiments, the Wheatstone bridge circuit 14 further includes four groups of conductive areas 142 for leading out electrical signals. Figure 1 As shown, four groups of varistors 140 are arranged in the middle of the substrate 10, and four conductive areas 142 are arranged around the four groups of varistors 140. In another embodiment, four groups of varistors 140 are arranged in four corners of the substrate 10 (not shown), and four conductive areas 142 are arranged in the middle of the substrate 10.
[0054] Further, in some embodiments, the Wheatstone bridge circuit 14 also includes a heavily doped contact region 143 formed between the sub-varistors 141, the heavily doped contact region 143 is used to electrically connect the sub-varistors 141 in the group of varistors 140, and the heavily doped contact region 143 is a region having conductive properties after the semiconductor is doped with metal ions. In some embodiments, the varistor 140 and the heavily doped contact region 143 are formed on the substrate 10, and the substrate 10 is also covered with a dielectric layer 15, and the four groups of conductive regions 142 are formed on the dielectric layer 15, and the dielectric layer 15 can be used as a protective layer and an insulating layer, and the material of the dielectric layer can be silicon dioxide or silicon nitride. The dielectric layer 15 can have a through hole, and the conductive region 142 and its conductive lead 144 can be electrically connected to the varistor 140 through the through hole on the dielectric layer 15. Optionally, the conductive lead 144 is made of at least one of copper, nickel-chromium alloy, iron, or platinum. Optionally, in some embodiments, the side of the dielectric layer 15 away from the substrate 10 is further covered with a passivation layer 16, and the four groups of conductive regions 142 are at least partially exposed to the passivation layer 16. The passivation layer 16 has a dense surface, which can be used to resist water vapor corrosion and device oxidation, etc., wherein the passivation layer 16 has a hollow area at the position corresponding to the conductive region 142, so that the conductive region 142 is exposed to the external environment, so as to facilitate the extraction of electrical signals.
[0055] In some embodiments, the substrate 20 may be a glass substrate or a ceramic substrate, etc. The substrate 20 may cover the groove 13 to form a sealed cavity. In one embodiment, the substrate 20 may be bonded to the substrate 10 to form a sealed cavity. For example, in some embodiments, the substrate 20 and the substrate 10 may be bonded to each other by metal chromium at a preset temperature and / or preset pressure. The specific preset temperature and pressure need to be determined according to the bonding material and the equipment actually used, which will not be described in detail here. Those skilled in the art can understand the concept of this embodiment based on the above description. In other embodiments, the substrate 20 may be directly bonded to the substrate 10.
[0056] For further information, see Figure 2-Figure 4In some embodiments, the substrate 20 has a first conductive hole 21 and a second conductive hole 22, the first conductive contact 40 is disposed on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the deformable material layer 30 through the first conductive hole 21, and the second conductive contact 50 is disposed on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the deformable material layer 30 through the second conductive hole 22. Specifically, in one embodiment, the first lead 31 and the second lead 32 are connected to both sides of the deformable material layer 30, the first conductive hole 21 is used to lead out the first lead 31, and the second conductive hole 22 is used to lead out the second lead 32, and the same material as the first lead 31 and the second lead 32 is deposited in the first conductive hole 21 and the second conductive hole 22, thereby forming the first conductive contact 40 and the second conductive contact 50. The first lead 31 and the second lead 32 can be externally connected to a resistance sampling circuit through the first conductive contact 40 and the second conductive contact 50, thereby forming a detection circuit for detecting the resistance of the deformable material layer 30. This embodiment can realize the electrical connection between the first conductive contact 40 and the second conductive contact 50 and the deformable material layer 30, and has a simple structure and a quick preparation method. Optionally, in other embodiments, the first conductive hole 21, the second conductive hole 22, the first conductive contact 40 and the second conductive contact 50 can also be arranged on the substrate 10, or partially arranged on the substrate 10, and the remaining part is arranged on the substrate 20. This application does not make specific restrictions and can be selected as needed. This embodiment of the application takes the first conductive hole 21, the second conductive hole 22, the first conductive contact 40 and the second conductive contact 50 as an example of being arranged on the substrate 20.
[0057] In some embodiments, the deformable material layer 30 is disposed in the sealed cavity and located on the bottom wall of the groove 13. The deformable material layer 30 is configured to be deformable when powered on, thereby applying a force to the bottom wall of the groove 13 that moves closer to or away from the substrate 20. The deformable material layer 30 in the embodiments of the present application refers to a material layer that can be deformed in a specific direction after power is applied. In some embodiments, the deformable material layer 30 is spaced apart from the substrate 20. After power is applied to the deformable material layer 30, the deformable material layer 30 can be deformed in a direction that moves closer to the substrate 20 and / or away from the substrate 20. Figure 2 In the embodiment, the direction close to the substrate 20 may refer to the vertical downward direction, which is defined as the first direction, and the direction away from the substrate 20 may refer to the vertical upward direction, which is defined as the second direction. This is used as an example in the subsequent embodiments. For example, the curved deformable material layer 30 can stretch in a direction parallel to the substrate 20 when powered on, and the middle bulging part moves vertically downward or vertically upward, thereby applying a force to the bottom wall of the groove 13 to move closer to or away from the substrate 20.
[0058] Optionally, in some embodiments, the deformable material layer 30 includes a thermo-deformable material layer or an electro-deformable material layer. The thermo-deformable material layer refers to a material layer that deforms after being heated. In some embodiments of the present application, the thermo-deformable material layer can generate heat and deform after being energized. In some embodiments, the material of the thermo-deformable material layer can be a metal such as platinum, nickel, tungsten, etc., or an electrothermal brake material (such as a polymer carbon nanotube composite material, a carbon nanotube layer and a vanadium dioxide layer composite material), electro-expansive ceramic (PZT), or electro-contractive composite material (SMA), etc. The electro-deformable material layer refers to a material layer that can be deformed under the action of an external electric field or magnetic field, and its material can include electro-piezoelectric deformable materials, such as electro-piezoelectric deformable materials (EDM) or electro-piezoelectric composite materials (ECM), etc., or electro-magnetic deformable materials, such as electromagnetically controllable insulators (EMIR), electromagnetically controllable ferrites (EMM) or electromagnetically controllable composite materials (EMC), etc.
[0059] The pressure compensation principle of the MEMS sensor 100 in the above embodiment of the present application is introduced below:
[0060] Strain film: The bottom wall of the sealed cavity projected onto the area of the substrate 10 along the second direction together constitutes the strain film. In some embodiments, the strain film at least includes the substrate 10 and the deformable material layer 30 .
[0061] When the strain film is subjected to pressure in the first direction, the strain film also moves in the first direction. At this time, a DC voltage can be applied to both ends of the thermodeformable material layer, so that the thermodeformable material layer is displaced in the second direction due to the heating effect of power-on, or a DC voltage can be applied to both ends of the electrodeformable material layer, so that the electrodeformable material layer will be stretched in a third direction perpendicular to the first direction due to power-on, and the electrodeformable material layer is in a suspended state in the area corresponding to the sealed cavity, so when the electrodeformable material layer is stretched horizontally, a force in the second direction will be generated in the suspended area in the middle of the electrodeformable material layer, so that the strain film is displaced in the second direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure in the first direction on the strain film is offset by the deformation force after power-on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.
[0062] Optionally, when the strain film is subjected to pressure in the second direction, the strain film also displaces in the second direction. At this time, a DC voltage can be applied to both ends of the thermodeformable material layer, so that the thermodeformable material layer displaces in the first direction due to the heating effect of power-on, or a DC voltage can be applied to both ends of the electrodeformable material layer, so that the electrodeformable material layer will stretch in a third direction perpendicular to the first direction due to power-on, and the electrodeformable material layer is in a suspended state in the area corresponding to the sealed cavity, so when the electrodeformable material layer stretches horizontally, a force in the first direction will be generated in the suspended area in the middle of the electrodeformable material layer, so that the strain film displaces in the first direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure in the second direction on the strain film is offset by the deformation force after power-on, the magnitude of the applied pressure in the second direction can be calculated according to the magnitude of the input voltage.
[0063] In the embodiment of the present application, a deformable material layer 30 is provided on the bottom wall of the sealed cavity (i.e., the bottom wall of the groove 13), and the pressure outside the cavity is tested by compensating the pressure inside and outside the sealed cavity. The deflection of the strain membrane is small and has higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be visualized to the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, and has higher sensitivity.
[0064] Optionally, in some embodiments, the thermodeformable material layer or the electrodeformable material layer has conductivity and is electrically connected to the first conductive contact 40 and the second conductive contact 50. By setting the thermodeformable material layer or the electrodeformable material layer to have conductivity, the thermodeformable material layer or the electrodeformable material layer can be directly electrically connected to the first conductive contact 40 and the second conductive contact 50 without further providing a conductive element on the thermodeformable material layer or the electrodeformable material layer. Therefore, the MEMS sensor 100 of the present application has a simple structure and is easy to prepare.
[0065] Optionally, see Figure 5-Figure 7 In other embodiments, the deformable material layer 30 includes a thermo-deformable material layer 33 and a conductive heating layer 34; the conductive heating layer 34 is electrically connected to the first conductive contact 40 and the second conductive contact 50, respectively. Among them, the material of the conductive heating layer 34 can be metal, carbon material or polymer material, and the present application does not impose specific restrictions on this. In the embodiment of the present application, the conductive heating layer 34 generates heat after being energized by the first conductive contact 40 and the second conductive contact 50, and then transfers the heat to the thermo-deformable material layer 33 to deform it. The thermo-deformable material layer can be an insulating material or a conductive material, which has a wider range of choices.
[0066] In some embodiments, see Figure 5 The conductive heating layer 34 and the thermo-deformable material layer 33 are stacked, and the conductive heating layer 34 can transfer heat from the contact surface to the thermo-deformable material layer 33. The larger the contact surface, the faster the transfer. In other embodiments, see Figure 6 and Figure 7 The conductive heating layer 34 surrounds the thermodeformable material layer 33 , and the heat of the conductive heating layer 34 can be transferred inward from the circumference of the thermodeformable material layer 33 . This heat transfer method can make the heat transfer more uniform.
[0067] Alternatively, in some further embodiments, see Figure 8 and Fig. 9 The deformable material layer 30 includes a plurality of first sub-deformable material layers 35 and a plurality of second sub-deformable material layers 36 arranged at intervals; the plurality of first sub-deformable material layers 35 and the plurality of second sub-deformable material layers 36 are arranged alternately; the first sub-deformable material layer 35 and the second sub-deformable material layer 36 exert forces on the bottom wall of the groove 13 in opposite directions when power is supplied, and are independently controlled by two different pairs of first conductive contacts 40 and second conductive contacts 50. In some embodiments, the deformation direction of the first sub-deformable material layer 35 is along the first direction, so the direction of the force exerted on the bottom wall of the groove 13 when power is supplied is also along the first direction, thereby causing the strain film to be displaced in the first direction; the deformation direction of the second sub-deformable material layer 36 is along the second direction, so the direction of the force exerted on the bottom wall of the groove 13 when power is supplied is also along the second direction, thereby causing the strain film to be displaced in the second direction, and vice versa. Through such a configuration, deformation compensation of the strain membrane when subjected to pressure along the first direction and pressure along the second direction can be achieved by only one deformable material layer 30. The structure is simple and easy to operate, and the accuracy of the MEMS sensor 100 can be improved, thereby improving the stability and reliability of the MEMS sensor 100.
[0068] Please continue to see Figure 3 and Figure 4In some embodiments, the deformable material layer 30 is conductive and is spaced apart from the substrate 20 to serve as a first electrode plate. The MEMS sensor 100 further includes a third conductive contact 60 and a second electrode plate 70, wherein the third conductive contact 60 is disposed on the substrate 10 and / or the substrate 20, and the second electrode plate 70 is disposed on the surface of the substrate 20 exposed to the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact 60, and the first electrode plate and the second electrode plate 70 are configured to repel or attract each other when powered. The material of the third conductive contact 60 and the material of the second electrode plate 70 may be the same or different, for example, they may be metal platinum, nickel, copper, tin oxide or manganese oxide. In one embodiment, the substrate 20 has a third conductive hole 23, and a conductive material is deposited in the third conductive hole 23 to form the third conductive contact 60.
[0069] In the above embodiment, the first electrode plate and the second electrode plate 70 can form a capacitor. When the strain film is subjected to pressure in the first direction, the strain film also moves in the first direction. At this time, a DC voltage can be applied to the first electrode plate and the second electrode plate 70 respectively, so that the charge on the first electrode plate and the charge on the second electrode plate 70 are the same, for example, both are positive or negative, so that the first electrode plate and the second electrode plate 70 repel each other, so that the strain film moves in the second direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure in the first direction on the strain film is offset by the deformation force caused by the heating when the power is turned on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.
[0070] Optionally, when the strain film is subjected to pressure in the second direction, the strain film also moves in the second direction. At this time, a DC voltage can be applied to both ends of the first electrode plate and the second electrode plate 70, respectively, so that the charge on the first electrode plate and the charge on the second electrode plate 70 are opposite, for example, the charge on the first electrode plate is positive, and the charge on the second electrode plate 70 is negative, or the charge on the first electrode plate is negative, and the charge on the second electrode plate 70 is positive, so that the first electrode plate and the second electrode plate 70 attract each other, so that the strain film moves in the first direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is zero, that is, the pressure in the first direction on the strain film is offset by the deformation force caused by the heating when the power is turned on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.
[0071] Furthermore, in some embodiments, a first sealing ring 80 is provided on the first surface 11 of the substrate 10, and a second sealing ring 90 is provided on the surface of the substrate 20 close to the substrate 10. The first sealing ring 80 and the second sealing ring 90 are arranged opposite to each other, so that the substrate 10 and the substrate 20 are bonded to form a sealed cavity.
[0072] Please also see Fig.10 , Fig.10 Flow chart of a method for preparing a MEMS sensor 100 provided in some embodiments of the present application. The method for preparing a MEMS sensor 100 provided in an embodiment of the present application includes:
[0073] S10: providing a substrate 10, wherein the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and a Wheatstone bridge circuit 14 is formed on the second surface 12;
[0074] The substrate 10 is a semiconductor substrate 10, for example, a SOI silicon wafer. Fig.11 , step S10 may include:
[0075] S11: forming four groups of varistors 140 on the second surface 12 of the substrate 10;
[0076] The varistor 140 generates a resistance change in response to the pressure change applied to the substrate 10, thereby converting the pressure signal into an electrical signal. In some embodiments, each group of varistors 140 includes two sub-varistors 141 arranged in parallel and spaced apart. Further, in one embodiment, step S11 also includes forming a heavily doped contact region 143 on the second surface 12 of the substrate 10. The heavily doped contact region 143 can be formed between the sub-varistors 141 to electrically connect the sub-varistors 141 in the group of varistors 140. The heavily doped contact region 143 is a region having conductive properties after the semiconductor is doped with metal ions.
[0077] S12 : forming a dielectric layer 15 on the second surface 12 of the substrate 10 , and forming a via hole in the dielectric layer 15 , wherein a position of the via hole corresponds to the varistor 140 to expose the varistor 140 .
[0078] S13: forming a conductive lead 144 and a conductive area 142 on the dielectric layer 15;
[0079] S14: forming a passivation layer 16 on the dielectric layer 15 , and hollowing out the position of the passivation layer 16 corresponding to the conductive area 142 , so that the conductive area 142 is exposed.
[0080] S20: forming a groove 13 on the first surface 11 of the substrate 10, and disposing a deformation material layer 30 on the bottom wall of the groove 13;
[0081] The formation method of the groove 13 is not limited, for example, the groove 13 can be formed by etching, solution corrosion or mechanical cutting. The formation method of the deformable material layer 30 can be selected according to the material of the deformable material layer 30, and this application does not make specific restrictions. Step S20 includes: forming a first lead 31 at a first end of the deformable material layer 30, and forming a second lead 32 at a second end of the deformable material layer 30 opposite to the first end.
[0082] S30: providing a substrate 20, and covering the groove 13 with the substrate 20 to form a sealed cavity.
[0083] See also Fig.12 , step S30 comprises:
[0084] S31: forming a first sealing ring 80 on the outer periphery of the first surface 11 of the substrate 10;
[0085] The first sealing ring may be made of chromium, aluminum, copper or gold, and may be formed by sputtering and photolithography.
[0086] S32 : forming a first conductive hole 21 and a second conductive hole 22 spaced apart on the substrate 20 , extending the first lead 31 out of the first conductive hole 21 to form a first conductive contact 40 , and extending the second lead 32 out of the second conductive hole 22 to form a second conductive contact 50 .
[0087] S33: forming a second sealing ring 90 on one side periphery of the substrate 20;
[0088] In step S33 , the process may further include: cleaning the substrate 20 to make the substrate 20 and the substrate 10 more closely bonded.
[0089] The first conductive via 21 and the second conductive via 22 may be formed by burning the substrate 20 using a TGV process.
[0090] S34: Align and bond the first sealing ring 80 and the second sealing ring 90 to achieve electrical connection between the first lead 31 and the first conductive contact 40 and electrical connection between the second lead 32 and the second conductive contact 50, thereby forming a sealed cavity.
[0091] In the embodiment of setting the second electrode plate 70, step S30 also includes: forming a third conductive hole 23 on the substrate 20, and forming the second electrode plate 70 at a position corresponding to the third conductive hole 23; the material of the second electrode plate 70 extends out of the third conductive hole 23 to form a third conductive contact 60.
[0092] Optionally, see Fig.13 , a flow chart of a method for preparing a MEMS sensor provided in some other embodiments of the present application, the method comprising:
[0093] S101: forming a second varistor 140 and a heavily doped contact region 143 on the second surface 12 of the substrate 10;
[0094] S102: forming a dielectric layer 15 on the second surface 12 of the substrate 10, forming a via hole on the dielectric layer 15, the position of the via hole corresponds to the position of the varistor 140; forming a conductive lead 144 on the dielectric layer 15, and forming a conductive area 142 at the end of the conductive lead 144;
[0095] S103: forming a passivation layer 16 on the dielectric layer 15, and forming via holes at positions of the passivation layer 16 corresponding to the conductive regions 142, so that the conductive regions 142 are exposed;
[0096] S104: forming a groove 13 on the first surface 11 of the substrate 10, and disposing a deformable material layer 30 and a first lead 31 and a second lead 32 electrically connected to the deformable material layer 30 on the bottom wall of the groove 13; and forming a first sealing ring 80 on the outer periphery of the first surface 11 of the substrate 10;
[0097] S105: providing a substrate 20, and forming a first conductive hole 21 and a second conductive hole 22 on the substrate 20;
[0098] S106: forming a first conductive contact 40 at the first conductive hole 21 , forming a second conductive contact 42 at the second conductive hole 22 , and forming a second sealing ring 90 on the outer periphery of the substrate 20 ;
[0099] S107 : Align the first sealing ring 80 and the second sealing ring 90 to bond the substrate 10 and the base plate 20 together.
[0100] The MEMS sensor 100 provided in the above embodiment of the present application realizes the test of the pressure outside the cavity by compensating each other between the pressure inside and outside the cavity. The deflection of the strain membrane is small and has higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be concretely represented to the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, and has higher sensitivity.
[0101] It should be pointed out that the position, material, size, function, etc. of each layer structure involved in the preparation method of the above-mentioned MEMS sensor 100 of the present application may correspond to the same as those in the implementation of the above-mentioned MEMS sensor 100 of the present application. For relevant details, please refer to the above-mentioned implementation, and no further details will be given here.
[0102] An exemplary embodiment of the application of the MEMS sensor 100 to an electronic atomization device is described below.
[0103] Please also see Fig.14 and Fig.15 , Fig.14An electronic atomization device provided for some embodiments of the present application; Fig.15 for Fig.14 Functional module diagram of the electronic atomization device.
[0104] The electronic atomization device 1000 provided in the embodiment of the present application includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomization component 300; the control unit 1000B includes a MEMS sensor 100, a control circuit 400 and a power supply 500.
[0105] In some embodiments, the liquid storage component 200 is used to store an aerosol-generating matrix, which can be a solid matrix or liquid substance of plant leaves with a specific aroma or substance, and can generate an aerosol for users to inhale under the condition of heating without burning. The electronic atomization device 1000 of the present application can be used in different fields, such as medical treatment, beauty or leisure inhalation. The liquid storage component 200 has an aerosol inlet end and an outlet end.
[0106] The atomizing assembly 300 is disposed on the air flow path from the air inlet to the air outlet and is in fluid communication with the liquid storage assembly 200, and is used to atomize the aerosol-generating substrate from the liquid storage assembly 200. The atomizing assembly 300 may generate aerosol in any manner, such as by ultrasonic vibration or heating to atomize the aerosol-generating substrate.
[0107] The MEMS sensor 100 is a MEMS sensor 100 provided in any of the above embodiments. The MEMS sensor 100 is disposed in the air flow channel of the electronic atomization device 1000, such as upstream of the atomization assembly 300, and is used to detect changes in air pressure in the air flow channel. The MEMS sensor 100 of this embodiment can be used as an air flow start switch. When a user draws on the electronic atomization device 1000, the MEMS sensor 100 of this embodiment can be used to detect the user's puffing action and output a control signal to the control circuit 400, thereby driving the control circuit to output a voltage to the atomization assembly 300.
[0108] The power source 500 can be used to provide voltage to the atomization assembly 300 and the MEMS sensor 100. The power source 500 can be a rechargeable battery cell, or a replaceable disposable battery cell, etc.
[0109] The control circuit 400 is electrically connected to the atomization assembly 300, the MEMS sensor 100 and the power supply 500, respectively. The control circuit 400 is used to control the power supply 500 to apply an electrical signal to the deformable material layer 30 according to the change in the output voltage caused by the change in air pressure in the air flow channel of the MEMS sensor 100, so that the deformable material layer 30 applies a force to the bottom wall of the groove 13 that moves closer to or away from the substrate 20, so that the change in the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold value, thereby compensating for the drift in the relationship between the resistance value and pressure of the varistor 140 caused by the compressive deformation of the substrate 10.
[0110] It can be understood that the change of air pressure in the air flow channel will cause the change of the resistance of the piezoresistor 140, thereby causing the change of the output voltage Vout of the MEMS sensor 100, and the change of the output voltage Vout of the MEMS sensor 100 reflects the air pressure in the air flow channel, that is, the pressure on the MEMS sensor 100. When the pressure on the MEMS sensor 100 is greater than a certain value, that is, when the change of the output voltage Vout of the MEMS sensor 100 exceeds the preset threshold, the drift of the relationship between the resistance and pressure of the piezoresistor 140 caused by the compression deformation of the substrate 10 is compensated by applying a force close to or away from the substrate 20 to the bottom wall of the groove 13 through the deformable material layer 30 so that the change of the output voltage Vout of the MEMS sensor 100 is less than or equal to the preset threshold. The preset threshold is the change of the output voltage Vout corresponding to the drift of the relationship between the resistance and pressure of the piezoresistor 140 caused by the compression deformation of the substrate 10, which can be obtained in advance through experiments.
[0111] In some embodiments, the control circuit 400 is further used to detect whether the force applied by the deformable material layer 30 to the bottom wall of the groove 13 offsets the deformation of the bottom wall of the groove 13 caused by the air pressure, and when it is detected that the force applied by the deformable material layer 30 to the bottom wall of the groove 13 offsets the deformation of the bottom wall of the groove 13 caused by the air pressure, the magnitude of the air pressure is determined according to the electrical signal applied to the deformable material layer 30. The control circuit 400 is also used to control the operation of the atomization assembly 300 according to the magnitude of the air pressure detected by the MEMS sensor 100.
[0112] Specifically, the preset threshold is set to 0, and the control circuit 400 can be used to detect whether the change in the output voltage Vout of the MEMS sensor 100 is 0, and when the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, the magnitude of the air pressure is determined according to the electrical signal applied to the deformable material layer 30. When the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, that is, the output voltage Vout of the MEMS sensor 100 returns to the initial value.
[0113] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 is deformed due to air pressure, the voltage applied to the deformable material layer 30 is Vx to compensate for the deformation, so that the output voltage Vout of the MEMS sensor 100 after compensation is restored to 0 (that is, the change in the output voltage Vout is 0). When the voltage Vx applied to the deformable material layer 30 is not 0, it is judged that the force applied by the deformable material layer 30 to the bottom wall of the groove 13 caused by the voltage Vx compensates for the deformation of the bottom wall of the groove 13 caused by the air pressure in the air flow channel, and then the air pressure can be obtained according to the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V or 4V, etc., and this application does not make specific restrictions. The embodiment of the present application is introduced with an initial value of 0.
[0114] The working principle of the MEMS sensor 100 of this embodiment is described below in conjunction with the process of a user smoking the electronic atomization device 1000:
[0115] When the user starts to inhale, the MEMS sensor 100 is subjected to pressure in the second direction, and the substrate 10 is deformed in the second direction. Since the Wheatstone bridge circuit 14 includes a piezoresistor 140, the change in the resistance of the piezoresistor 140 causes the output voltage Vout of the Wheatstone bridge circuit 14 to change. Based on the change in the output voltage Vout, the user's inhalation action can be detected. When the substrate 10 is displaced in the second direction, a voltage is applied to the deformable material layer 30, so that the deformable material layer 30 is heated and displaced in the first direction, thereby offsetting the displacement in the second direction caused by the airflow fluctuation, and returning the output voltage Vout of the Wheatstone bridge circuit 14 to an initial value, for example, an initial value of 0.
[0116] When the user performs a blowing action or an airflow fluctuation is caused by suction, a positive pressure may be generated in the electronic atomization device 1000 . Therefore, in addition to the displacement in the second direction, the substrate 10 may also be displaced along the first direction.
[0117] When the substrate 10 is subjected to pressure in the first direction (blowing or air flow fluctuation) resulting in displacement in the first direction, the change in the resistance value of the varistor 140 causes the output voltage Vout of the Wheatstone bridge circuit 14 to change. Based on the change in the output voltage Vout, the change in air pressure can be detected. Therefore, a voltage is applied to both ends of the deformable material layer 30 to make the deformable material layer 30 energized and heated, thereby causing the deformable material layer 30 and the substrate 10 to displace in the second direction, thereby offsetting the displacement in the first direction caused by the pressure in the first direction. When the displacement in the first direction and the displacement in the second direction are completely offset, the voltage output Vout of the Wheatstone bridge circuit 14 returns to the initial value 0.
[0118] It can be seen that according to the different installation positions of the MEMS sensor 100 of this embodiment, it can sensitively detect the pressure in the first direction and the second direction set arbitrarily. Compared with the piezoresistive sensor in the related art, it not only has higher accuracy, but also has a wider application range.
[0119] In the electronic atomization device 1000 of the present embodiment, since a DC voltage can be applied to the deformable material layer 30 to cause displacement of the deformable material layer 30 along the first direction when subjected to pressure in the second direction, thereby offsetting the displacement of the strain film along the second direction caused by suction; in the state of being subjected to pressure in the first direction, a DC voltage can be applied to the deformable material layer 30 to cause displacement of the deformable material layer 30 along the second direction, thereby offsetting the displacement of the strain film along the first direction caused by airflow fluctuations. Therefore, during the entire use process, the deflection of the strain film is always small, thereby improving the problem that the deformation of the substrate 10 does not change ideally linearly with the pressure, thereby improving the detection accuracy of the MEMS sensor 100 of the embodiment. Moreover, the airflow channel of the electronic atomization device 1000 is prone to form condensate; since the deformable material layer 30 is sealed in the groove 13, the chance of the deformable material layer 30 being corroded or contaminated by the condensate can be reduced.
[0120] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.
[0121] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.
[0122] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A MEMS sensor, characterized in that: include: A substrate having a first surface and a second surface opposite to each other; the first surface having a groove, the second surface having a Wheatstone bridge circuit, and a bridge arm of the Wheatstone bridge circuit including a varistor; A substrate, covering the groove to form a sealed cavity; A deformation material layer is disposed in the sealing cavity and located on the bottom wall of the groove; A first conductive contact and a second conductive contact are disposed on the substrate and / or the base plate at intervals and are electrically connected to the deformable material layer respectively; The deformable material layer is configured to be deformable when powered, thereby applying a force to the bottom wall of the groove to move closer to or away from the substrate.
2. The MEMS sensor according to claim 1, characterized in that: The deformable material layer is spaced apart from the substrate; the deformable material layer includes a thermo-deformable material layer or an electro-deformable material layer.
3. The MEMS sensor according to claim 2, characterized in that: The thermodeformable material layer or the electrodeformable material layer has conductivity and is electrically connected to the first conductive contact and the second conductive contact.
4. The MEMS sensor according to claim 2, characterized in that: The deformable material layer includes the thermo-deformable material layer and a conductive heating layer; the conductive heating layer is electrically connected to the first conductive contact and the second conductive contact respectively.
5. The MEMS sensor according to claim 4, characterized in that: The conductive heat-generating layer and the thermo-deformable material layer are stacked, or the conductive heat-generating layer surrounds the thermo-deformable material layer.
6. The MEMS sensor according to any one of claims 1 to 5, characterized in that: The deformable material layer includes a plurality of first sub-deformable material layers and a plurality of second sub-deformable material layers which are arranged at intervals; A plurality of first sub-deformable material layers and a plurality of second sub-deformable material layers are alternately arranged; when power is supplied, the first sub-deformable material layers and the second sub-deformable material layers exert forces on the bottom wall of the groove in opposite directions, and are independently controlled by two different pairs of the first conductive contacts and the second conductive contacts.
7. The MEMS sensor according to claim 1, characterized in that: The deformable material layer is conductive and spaced apart from the substrate to serve as a first electrode plate; The MEMS sensor further comprises: A third conductive contact is disposed on the substrate and / or the base plate; A second electrode plate, disposed on a surface of the substrate exposed to the sealed cavity, spaced apart from the first electrode plate, and electrically connected to the third conductive contact; The first electrode plate and the second electrode plate are configured to repel or attract each other when powered on.
8. The MEMS sensor according to claim 1, characterized in that: The substrate has a first conductive hole and a second conductive hole; the first conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the deformable material layer through the first conductive hole, and the second conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the deformable material layer through the second conductive hole.
9. The MEMS sensor according to claim 1, characterized in that: The Wheatstone bridge circuit includes four groups of piezoresistors, which produce resistance changes in response to pressure changes applied to the substrate, thereby converting pressure signals into electrical signals; the Wheatstone bridge circuit also includes four groups of conductive areas for leading out the electrical signals.
10. The MEMS sensor according to claim 9, characterized in that: The substrate is a semiconductor substrate; each group of the varistors includes two sub-varistors that are parallel and spaced apart, and a heavily doped contact region formed between the sub-varistors, and the heavily doped contact region is used to electrically connect the sub-varistors in the group of the varistors.
11. The MEMS sensor according to claim 10, characterized in that: The varistor and the heavily doped contact region are formed on the substrate, the substrate is also covered with a dielectric layer, and the four groups of conductive regions are formed on the dielectric layer.
12. The MEMS sensor according to claim 11, characterized in that: The side of the dielectric layer away from the substrate is also covered with a passivation layer, and the four groups of conductive areas are respectively at least partially exposed from the passivation layer.
13. An electronic atomization device, characterized in that: include: A liquid storage unit, used for storing an aerosol-generating substrate, wherein the liquid storage unit has an aerosol inlet end and an outlet end; An atomizing assembly, disposed on the air flow path from the air inlet end to the air outlet end, for atomizing the aerosol generating matrix; The MEMS sensor is a MEMS sensor as claimed in any one of claims 1 to 12; the MEMS sensor is arranged on the air flow channel of the electronic atomization device, and is used to detect the air pressure change in the air flow channel; A power supply, used to provide voltage to the atomization assembly and the MEMS sensor; A control circuit is electrically connected to the power supply, the atomization assembly and the MEMS sensor respectively; The control circuit is used to control the power supply to apply an electrical signal to the deformable material layer according to the change in output voltage of the MEMS sensor caused by the change in air pressure in the air flow channel, so that the deformable material layer applies a force to the bottom wall of the groove that moves closer to or away from the substrate, so that the change in output voltage of the MEMS sensor is less than or equal to a preset threshold.
14. The electronic atomization device according to claim 13, characterized in that: The preset threshold is zero; the control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is zero, and when it is detected that the change in the output voltage of the MEMS sensor is zero, determine the magnitude of the air pressure according to the electrical signal applied to the deformable material layer.